KR100857231B1 - apparatus and method for treating substrate - Google Patents

Abstract

The substrate support member is installed in the process chamber, and the substrate is placed on the substrate support member. The source gas is supplied to the inside of the process chamber, and the coil member applies energy to the inside of the process chamber to generate plasma from the source gas. The generated plasma is used to process the substrate. The position where the plasma is generated can be adjusted by the lifting and lowering of the coil member. The optimum position of the plasma can be determined according to the process conditions, and the coil member can be lifted and raised so that the plasma can be generated at the optimum position.

Coil member, lifting member

Description

Apparatus and method for treating substrate

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines.

2 is a schematic view showing a semiconductor manufacturing apparatus including a substrate processing apparatus according to the present invention.

3 is a diagram schematically illustrating the substrate processing apparatus of FIG. 2.

4 and 5 are views schematically showing the support member of FIG.

6 is a perspective view schematically illustrating the support member of FIG. 3.

FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 5.

8 is a view illustrating a state in which the substrate processing apparatus of FIG. 3 operates.

9 and 10 are flowcharts illustrating a substrate processing method according to the present invention.

<Description of Symbols for Main Parts of Drawings>

1: semiconductor manufacturing equipment 10: substrate processing apparatus (process chamber)

100: process chamber 200: support member

220: support plate 240: drive shaft

500: plasma generating member 520: coil

540: coil fixture 560: lifting arm

580: actuator 600: gas supply member

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method for processing a substrate using plasma.

The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.

One of the issues with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines a. 1A and 1B show an incomplete gap filling process. The gap between the metal lines a is filled with the insulating film b. At this time, the insulating film b is filled in the gap and at the same time, overhangs h grow in the form of breadloafing, and the growth rate of the overhang h is filled in the gap. It is faster than the growth rate of (b). As a result, the overhangs h meet with each other to close the top of the gap to form voids in the gap, preventing the insulating film b from being deposited in the gap. The formed voids result in high contact resistance and high sheet resistance, and also cause breakage. In addition, the voids may contain a treatment liquid or water, causing stability problems.

The High-Density Plasma Chemical Vapor Deposition (HDPCVD) method uses a deposition / etching / deposition method that deposits a film in a gap using plasma, etches overhang grown during deposition of the film, and then deposits the film again. To prevent the formation of voids. That is, the partially filled gap is reshaped to open the gap, and a film is deposited in the gap before voids are formed in the gap. This method can deposit a film without voids in a gap having a large Aspect Ratio (AR).

Such plasma chemical vapor deposition apparatus includes a chamber in which a deposition process is performed. The wafer is loaded inside the chamber, and a process gas is supplied to the top of the wafer. When the electromagnetic field is formed in the chamber while the process gas is supplied, plasma is generated from the process gas by the electromagnetic field. Outside the chamber is provided a coil to which a high frequency power is connected, and when a high frequency power is applied, the coil creates an electromagnetic field in the chamber.

At this time, since the coil is fixed to the outside of the chamber, the position where the plasma is generated is always the same. Plasma is always created at the same location even if process conditions such as process rate or process gas are changed, and the distance between the generated plasma and wafer is always constant. Therefore, it was not possible to actively respond to changes in process conditions.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide an apparatus and method for processing a substrate capable of adjusting the generation position of the plasma.

Another object of the present invention is to provide an apparatus and method for processing a substrate capable of determining an optimal position and generating plasma at the optimal position.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to the present invention, an apparatus for processing a substrate includes a process chamber providing an internal space where a process is performed, a support member installed inside the process chamber and supporting a substrate, and a gas supply member supplying a source gas to the process chamber. And a plasma generating member for generating plasma from the source gas, wherein the plasma generating member includes a coil member for applying energy to the source gas supplied into the process chamber, and between the support member and the coil member. It includes a lifting member for adjusting the distance. In this case, the elevating member may be connected to the coil member to elevate the coil member.

The coil member may include a coil surrounding the sidewall of the process chamber and a coil fixture on which the coil is mounted.

According to the present invention, a method of treating a substrate using plasma includes placing the substrate on a supporting member installed in the process chamber, supplying a source gas to the inside of the process chamber, and applying energy to the source gas. Generating the plasma, and treating the substrate using the plasma, wherein generating the plasma includes adjusting a generation position of the plasma according to process conditions.

The step of adjusting the generation position of the plasma according to the process conditions may include the step of lifting the coil member for applying energy to the source gas.

The step of adjusting the production position of the plasma according to the process conditions is to measure the process rate by varying the production position of the plasma according to various process conditions, the optimal generation of the plasma according to various process conditions from the measured process rate Determining a location, and adjusting the location of the plasma to an optimal location according to a given process condition.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 10. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto. In addition, hereinafter, a semiconductor manufacturing apparatus 1 having a substrate processing apparatus (or process chamber) 10 performing a deposition process will be described as an example. However, the spirit and scope of the present invention is not limited thereto, and the present invention may be applied to an ashing process, an etching process, or a cleaning process. In addition, hereinafter, an inductively coupled plasma (ICP) type plasma apparatus has been described as an example, but may be applied to various plasma apparatuses including an electron cyclotron resonance (ECR) type.

2 is a diagram schematically showing a semiconductor manufacturing facility 1 including a substrate processing apparatus 10 according to the present invention.

Referring to FIG. 2, the semiconductor manufacturing facility 1 includes a process facility 2, an Equipment Front End Module (EFEM) 3, and an interface wall 4. The plant front end module 3 is mounted in front of the process plant 2 to transfer the wafer W between the vessel (not shown) in which the wafers W are housed and the process plant 2. The facility front end module 3 has a plurality of loadports 60 and a frame 50. The frame 50 is located between the load port 60 and the process equipment 2. The container containing the wafer W is placed on the load port 60 by a transfer means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. Is put on. The container may be a closed container such as a front open unified pod (FOUP). In the frame 50, a frame robot 70 for transferring the wafer W is installed between the vessel placed in the load port 60 and the process facility 2. In the frame 50, a door opener (not shown) for automatically opening and closing the door of the container may be installed. In addition, the frame 50 may be provided with a fan filter unit (FFU) (not shown) for supplying clean air into the frame 50 so that clean air flows from the top to the bottom in the frame 50. .

The wafer W is subjected to a predetermined process in the process facility 20. The process facility 2 has a loadlock chamber 20, a transfer chamber 30, and a process chamber 10. The transfer chamber 30 has a generally polygonal shape when viewed from the top. The load lock chamber 20 or the process chamber 10 is located at the side of the transfer chamber 30. The loadlock chamber 20 is located on the side adjacent to the facility front end module 3 of the sides of the transfer chamber 30, and the process chamber 10 is located on the other side. The load lock chamber 20 includes a loading chamber 20a in which the wafers W flowing into the process facility 2 temporarily stay in order to proceed with the process, and wafers W exiting the process facility 2 after the process is completed. ) Has an unloading chamber 20b that temporarily stays. The interior of the transfer chamber 30 and the process chamber 10 is maintained at a vacuum, and the interior of the load lock chamber 20 is converted to a vacuum and atmospheric pressure. The load lock chamber 20 prevents foreign contaminants from entering the transfer chamber 30 and the process chamber 10. A gate valve (not shown) is installed between the load lock chamber 20 and the transfer chamber 30 and between the load lock chamber 20 and the facility front end module 3. When the wafer W moves between the facility front end module 3 and the load lock chamber 20, the gate valve provided between the load lock chamber 20 and the transfer chamber 30 is closed and the load lock chamber 20 is closed. In the case where the wafer W is moved between the transfer chamber 30 and the transfer chamber 30, the gate valve provided between the load lock chamber 20 and the facility front end module 3 is closed.

The transfer robot 40 is mounted in the transfer chamber 30. The transfer robot 40 loads the wafer W into the process chamber 10 or unloads the wafer W from the process chamber 10. In addition, the transfer robot 40 transfers the wafer W between the process chamber 10 and the load lock chamber 20.

The process chamber 10 performs a process such as deposition or etching on the wafer W. Hereinafter, the process chamber 10 will be referred to as a substrate processing apparatus 10. Detailed description of the substrate processing apparatus 10 will be described later.

3 is a front view schematically showing a substrate processing apparatus 10 according to the present invention.

As shown in FIG. 3, the substrate processing apparatus 10 for performing a process on the wafer W includes a process chamber 100.

In the present embodiment, the process performed using the substrate processing apparatus 10 is a deposition process, and hereinafter, a high density plasma chemical vapor deposition (HDPCVD) process will be described as an example. As previously seen, the high density plasma chemical vapor deposition process involves the deposition process of forming a high density plasma to deposit a film in the gap formed between the metallization lines, and the etching of etching overhangs on the gap. etching) process. Overhangs growing at the top of the gap close the inlet of the gap to form voids in the gap. Thus, by removing overhangs through the etching process, voids are prevented from forming in the gap.

The support member 200 for supporting the wafer W is installed in the internal space of the process chamber 100. The support member 200 may use an electrostatic chuck (ESC) that can fix the wafer (W) using electrostatic force, and selectively absorb the wafer (W) by a mechanical chuck or a vacuum that can be clamped through a mechanical structure. A vacuum chuck can be used. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W).

4 and 5 are views schematically showing the support member 200 of FIG. 6 is a perspective view schematically illustrating the support member of FIG. 3, and FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 5.

As shown in FIGS. 4 and 5, the support member 200 includes a support plate 220, a drive shaft 240, a driver 260, and a controller 280.

The wafer W is placed side by side with the support plate 220 on the support plate 220. The support plate 220 is made of aluminum, so that the pattern formed on the wafer W may react with the support plate 220. Accordingly, the protective layer 221 of a ceramic material may be formed on the upper surface of the support plate 220, and the ceramic material may include aluminum oxide (Al ₂ O ₃ ).

One end of the drive shaft 240 is connected to the lower portion of the support plate 220, and the other end of the drive shaft 240 is connected to the driver 260. The driver 260 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotation force is transmitted to the drive shaft 240, the drive shaft 240 rotates together with the support plate 220.

A sealing member 241 is provided between the drive shaft 240 and the bottom wall of the process chamber 100. The sealing member 241 maintains the airtightness inside the process chamber 100 and at the same time helps the rotation of the drive shaft 240. The sealing member 241 includes a magnetic seal.

The driver 260 is connected to the controller 280, which controls the operation of the driver 260. The controller 280 may control all operations of the driver 260 including the rotation speed, the rotation amount, and the rotation direction of the driver 260.

As shown in FIG. 5, the first cooling line through which the cooling gas flows and the second cooling line through which the cooling fluid flows are formed in the support plate 220.

The first cooling line supplies a cooling gas to the rear surface of the wafer W placed on the support plate 220, and the wafer W is cooled to a predetermined temperature by the cooling gas. High temperature heat is generated during the process, and particularly high temperature heat is generated in the etching process by sputtering during the high density plasma chemical vapor deposition process. As a result, the temperature of the wafer W may increase, and the first cooling line cools the wafer W using a cooling gas.

The first cooling line includes a cooling gas flow path 222, a distribution line 224, and a plurality of branch lines 226. As shown in FIG. 7, the cooling gas flow path 222 is formed at the center of the support plate 220, and the lower end of the cooling gas flow path 222 is formed of the cooling gas flow path 242 formed at the center of the driving shaft 240. Connected to the top. The distribution line 224 extends in the radial direction of the support plate 220 from the cooling gas flow path 222. The branch lines 226 branch from the distribution line 224 and extend toward the upper portion of the support plate 220, and are connected to the plurality of ejection openings 228 formed on the protective layer 221, respectively.

A lower end of the cooling gas flow path 242 formed at the center of the drive shaft 240 is connected to the cooling gas line 244, and the cooling gas supplied to the rear surface of the wafer W flows in the cooling gas line 244. The cooling gas contains an inert gas, and the inert gas contains helium (He).

The cooling gas supplied to the cooling gas passage 242 through the cooling gas line 244 is supplied to each branch line 226 through the cooling gas passage 222 and the distribution line 224, and the supplied cooling gas is It is supplied to the back surface of the wafer W through the jet holes 228.

As shown in FIG. 6, the plurality of support protrusions 229 are provided on the protective layer 221. The plurality of support protrusions 229 are disposed at equal intervals in four directions with respect to the center and the center of the support plate 220, and support the rear surface of the wafer W placed on the support plate 220.

Accordingly, the wafer W is supported by the plurality of support protrusions 229 to be kept at a predetermined distance from the upper surface of the protective layer 221, and the wafer W is supported by the cooling gas supplied to the rear surface. Controlled to a constant temperature.

The second cooling line 232 is located below the distribution line 224, and as shown in FIG. 7, the second cooling line 232 is spirally arranged to surround the cooling gas flow path 222. The second cooling line 232 cools the temperature of the support plate 220 to a predetermined temperature. As mentioned above, the temperature of the support plate 220 may increase due to the high temperature heat generated in the deposition process, particularly the high density plasma chemical vapor deposition process. Therefore, the support plate 220 is cooled using the second cooling line 232.

As shown in FIG. 5, one end of the second cooling line 232 is connected to the cooling fluid supply line 234, and the other end of the second cooling line 232 is connected to the cooling fluid recovery line 236. The cooling fluid supply line 234 is opened and closed by a valve 234a installed on the cooling fluid supply line 234. Cooling fluid flows in the cooling fluid supply line 234, and supplies cooling fluid to the second cooling line 232. The cooling fluid supplied through the cooling fluid supply line 234 moves along the second cooling line 232 to the end where the cooling fluid recovery line 236 is connected to cool the support plate 220 to a predetermined temperature. Thereafter, the cooling fluid is recovered through the cooling fluid recovery line 236, and the recovered cooling fluid is cooled to a predetermined temperature through a chiller (not shown), and then re-supplied to the cooling fluid supply line 234. Can be.

Next, a passage 122 through which the wafer W may enter and exit is formed on the sidewall of the process chamber 100. The wafer W enters into the process chamber 100 through the passage 122 or exits to the outside of the process chamber 100.

On the passage 122, a door 130 for opening and closing the passage 122 is installed. The door 130 is connected to the driver 132 and opens and closes the passage 122 while moving in a direction substantially perpendicular to the longitudinal direction of the passage 122 by the operation of the driver 132.

A plurality of exhaust holes 102 are formed in the bottom wall of the process chamber 100, and exhaust lines 104 are connected to the exhaust holes 102, respectively. A pump (not shown) may be installed on the exhaust line 104. The exhaust lines 104 serve as a passage for discharging the gas inside the process chamber 100 to the outside. The reaction gas, the unreacted gas, and the reaction by-product generated in the process chamber 100 are discharged to the outside of the process chamber 100 through the exhaust lines 104, and the pressure inside the process chamber 100 is discharged. In order to maintain the vacuum state, the gas inside the process chamber 100 may be discharged to the outside through the exhaust lines 104. The exhaust lines 104 are opened and closed by a valve 104a installed on the exhaust line 104.

A supply hole 108 is formed in the ceiling wall of the process chamber 100, and a gas supply member 600 for supplying a source gas into the process chamber 100 is connected to the supply hole 108. The gas supply member 600 supplies the source gas and the cleaning gas into the process chamber 100. The gas supply member 600 includes a gas supply line 620 and first and second supply lines 640 and 660 branched from the gas supply line 620. The gas supply line 620 is connected to the supply hole 108.

The cleaning gas flows inside the first supply line 640, and the first supply line 640 is opened and closed by a valve 640a. The cleaning gas includes nitrogen trifluoride (NF ₃ ) and argon (Ar). The cleaning gas is provided to clean the interior of the process chamber 100 after the process is completed. Source gas flows inside the second supply line 660, and the second supply line 660 is opened and closed by a valve 660a. The source gas is a silicon-containing gas comprising silane (SiH ₄ ) and an oxygen-containing gas comprising oxygen (O ₂ ). The cleaning gas is supplied into the process chamber 100 through the first supply line 640 and the gas supply line 620, and the source gas is processed through the second supply line 660 and the gas supply line 620. It is supplied to the inside of the chamber 100.

The plasma generating member 500 for generating plasma from the source gas supplied into the process chamber 100 is installed on the sidewall of the process chamber 100. The plasma generating member 500 includes a coil 520, a coil fixture 540, a lifting arm 560, and a driver 580. The coil 520 surrounds the sidewall of the process chamber 100, applies energy to the source gas supplied inside the process chamber 100, and the source gas is discharged by the applied energy (specifically, Radio frequency discharge for inductively coupled plasma type, and microwave discharge for electron cyclotron resonance. The coil 520 is mounted inside and fixed to the coil fixture 540. The coil fixture 540 is connected to the upper end of the lifting arm 560, and is lifted by the lifting arm 560 together with the coil 520. A lower end of the lifting arm 560 is connected to the driver 580, and the lifting arm 560 is lifted by the operation of the driver 580.

8 is a view illustrating a state in which the substrate processing apparatus 10 of FIG. 3 operates. The position where the plasma is generated is determined by the position of the coil 520. As shown in FIG. 8, when energy is applied using the coil 520 while the source gas is supplied into the process chamber 100, the source gas is discharged and plasma is generated from the source gas. At this time, since the discharge is made by the coil 520, the discharge is made at a position corresponding to the position of the coil 520, the plasma is generated.

Therefore, the distance d between the generated plasma and the wafer W is variable depending on the position of the coil 520. When the coil 520 moves upward, the distance d between the plasma and the wafer W increases, and when the coil 520 moves downward, the distance d between the plasma and the wafer W decreases. That is, the distance d between the plasma and the wafer W increases and decreases according to the position of the coil 520.

9 and 10 are flowcharts illustrating a substrate processing method according to the present invention. Hereinafter, a substrate treating method according to the present invention will be described with reference to FIGS. 9 and 10.

First, the wafer W is loaded on the support member 200 in the process chamber 100 (S10). When the door 130 is opened by the driver 132, the wafer W is introduced into the process chamber 100 through the passage 122 and placed on the support protrusion 229 on the support member 200. Lose. As described above, the wafer W may be fixed on the support plate 220 by an electrostatic force.

Next, plasma is generated in the process chamber 100 (S20). Specific methods for generating plasma are as follows. First, the generation position of the plasma is adjusted (S110). That is, the distance d between the plasma and the wafer W is determined, and the coil 520 is moved to the determined position. The coil 520 is lifted by the lifting arm 560 in a state mounted inside the coil fixture 540. Secondly, the source gas is supplied to the upper portion of the wafer W using the gas supply member 600 (S120). The source gas flowing in the second supply line 660 is supplied into the process chamber 100 through the gas supply line 620 and the supply hole 108. Third, the supplied source gas is discharged (S130). When energy is applied to the inside of the process chamber 100 using the coil 520, the energy is transferred to the top of the wafer W through the sidewall of the process chamber 100, and a source supplied to the top of the wafer W. The gas is discharged to generate plasma from the source gas.

Next, a film is deposited in the gap of the wafer W using the generated plasma (S30). The resulting plasma is supplied onto the wafer W, and a film is deposited in the gap of the wafer W. Thereafter, as described above, etching is performed to remove the overhang grown on the gap, and when the etching is completed, the deposition process is repeated in the same manner. Through this method, the gap of the wafer W is filled.

Looking in more detail how to control the location of the plasma generation is as follows. First, the process rate according to the generation position is measured while varying the generation position of the plasma according to various process conditions (type of source gas or film type, process rate, etc.) (S210). The measured value may be stored in a separate storage device (database).

Secondly, the optimal production position of the plasma is determined from the measured process rate (S220). That is, given the actual process conditions, for example, when the specific film to be deposited in the gap of the wafer W is determined and the deposition rate for the specific film is determined, an optimal generation position that satisfies such process conditions is determined. Determined by the measured value.

Third, the generation position of the plasma is adjusted to the optimum generation position (S230). The generation position of the plasma can be controlled by the method described above.

According to the above-described method, since the plasma generation position, that is, the distance d between the plasma and the wafer W can be set to an optimal position, a more mature process can be achieved. In particular, when a plurality of processes are continuously performed in one process chamber 100, for example, when the second film is deposited again after the first film is deposited, the distance between the plasma and the wafer W for the first film. By adjusting the distance (d) between the plasma (d) and the wafer (W) for the second film differently, a more complete process can be performed.

Meanwhile, in the present embodiment, the coil 520 and the coil fixture 540 are lifted to adjust the distance d between the plasma and the wafer W. However, the support plate 220 is elevated to lift and lower the plasma The distance d from the wafer W can be adjusted. Such applications are apparent to those skilled in the art.

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, the distance between the substrate and the plasma can be adjusted. In addition, when a plurality of processes are performed continuously, the distance between the substrate and the plasma for each process may be adjusted differently. In addition, it is possible to perform a highly mature process by adjusting the generation position of the plasma to the optimum position.

Claims (9)

A process chamber providing an internal space in which the process is performed; A support member installed inside the process chamber and supporting a substrate; A gas supply member supplying a source gas into the process chamber; Including a plasma generating member for generating a plasma from the source gas, The plasma generating member, A coil member for applying energy to the source gas supplied into the process chamber; And And an elevating member connected to the coil member to adjust the distance between the supporting member and the coil member by elevating the coil member. delete The method of claim 1, The coil member, A coil surrounding a side wall of the process chamber; And And a coil fixture on which the coil is mounted. In the method of processing a substrate using a plasma, Placing the substrate on a support member installed in the process chamber; Supplying a source gas into the process chamber and applying energy to the source gas to generate the plasma; And Treating the substrate using the plasma, Generating the plasma comprises adjusting the generation position of the plasma according to process conditions. The method of claim 4, wherein And adjusting the generation position of the plasma according to the process conditions comprises lifting and lowering a coil member for applying energy to the source gas. The method of claim 4, wherein Adjusting the generation position of the plasma according to the process conditions, Measuring a process rate by varying a production position of the plasma according to various process conditions; Determining an optimal production position of the plasma according to a given process condition from the measured process rate; And Adjusting the generation position of the plasma to an optimal generation position. In the method of processing a substrate using a plasma, Placing the substrate on a support member installed in the process chamber; Supplying a first source gas into the process chamber and applying energy to the first source gas to generate a first plasma; And Processing the substrate using the first plasma; Supplying a second source gas into the process chamber and applying energy to the second source gas to generate a second plasma; And Treating the substrate using the second plasma, Generating the first and second plasmas comprises adjusting the generation positions of the first and second plasmas according to process conditions. The method of claim 7, wherein Adjusting the production position of the first plasma according to the process conditions, Measuring a process rate by changing a generation position of the first plasma according to various process conditions; Determining an optimal production location of the first plasma according to a given process condition from the measured process rate; And Adjusting the generation position of the first plasma to an optimal generation position. The method according to claim 7 or 8, Adjusting the generation position of the second plasma according to the process conditions, Measuring a process rate by changing a generation position of the second plasma according to various process conditions; Determining an optimal production position of the second plasma according to a given process condition from the measured process rate; And Adjusting the generation position of the second plasma to an optimal generation position.

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