KR100839188B1 - Method and apparatus for processing substrate - Google Patents

Abstract

A method and an apparatus for treating a substrate are provided to deposit a film on a wafer with a uniform thickness by uniformly supplying a process gas to the wafer. A substrate treating apparatus includes a process chamber(100), a support member(200), a shower head(620), a moving member, and a plasma generating member. The process chamber provides an inner space for a substrate treating process. The support member is implemented in the process chamber and supports a substrate. The shower head is arranged on the support member and supplies a source gas to the support member. The moving member moves the shower head. The plasma generating member generates plasma from the source gas.

Description

Method and apparatus for processing substrate

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines.

2 is a schematic view showing a semiconductor manufacturing apparatus including a substrate processing apparatus according to the present invention.

3 is a diagram schematically illustrating the substrate processing apparatus of FIG. 2.

4 is a view illustrating a state in which the showerhead of FIG. 3 moves.

FIG. 5 is a perspective view illustrating the jet plate of FIG. 4. FIG.

FIG. 6 is a diagram illustrating a state of spraying source gas using the shower head of FIG. 3.

7 and 8 are views schematically showing the supporting member of FIG.

9 is a perspective view schematically illustrating the support member of FIG. 6.

FIG. 10 is a cross-sectional view taken along the line II ′ of FIG. 8.

11 to 13 are flowcharts illustrating a substrate processing method according to the present invention.

14 is a view illustrating a state in which the substrate processing apparatus of FIG. 3 operates.

<Description of Symbols for Main Parts of Drawings>

1: semiconductor manufacturing equipment 10: substrate processing apparatus (process chamber)

100: process chamber 200: support member

220: support plate 240: support shaft

300: upper electrode 600: gas supply member

620: shower head 640: drive shaft

680 driver

The present invention relates to a method and apparatus for processing a substrate, and more particularly, to a method and apparatus for processing a substrate using plasma.

The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.

The first is the 'quality' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties. The composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.

The second is uniform thickness across the wafer. In particular, the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.

Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines a. 1A and 1B show an incomplete gap filling process. The gap between the metal lines a is filled with the insulating film b. At this time, while the insulating film b is filled in the gap, an overhang h grows in the form of breadloafing in the upper portion of the gap, and the growth rate of the overhang h is an insulating film filled in the gap. It is faster than the growth rate of b). As a result, the overhangs h meet with each other to close the top of the gap to form voids in the gap, preventing the insulating film b from being deposited in the gap. The formed voids result in high contact resistance and high sheet resistance, and also cause breakage. In addition, the voids may contain a treatment liquid or water, causing stability problems.

The High-Density Plasma Chemical Vapor Deposition (HDPCVD) method uses a deposition / etching / deposition method that deposits a film in a gap using plasma, etches overhang grown during deposition of the film, and then deposits the film again. To prevent the formation of voids. That is, the partially filled gap is reshaped to open the gap, and a film is deposited in the gap before voids are formed in the gap. This method can deposit a film without voids in a gap having a large Aspect Ratio (AR).

Such plasma chemical vapor deposition apparatus includes a chamber in which a deposition process is performed. The wafer is loaded inside the chamber, and a process gas is supplied to the top of the wafer. When the electromagnetic field is formed in the chamber while the process gas is supplied, plasma is generated from the process gas by the electromagnetic field. The upper electrode of the wafer is provided with an upper electrode to which a high frequency power is connected, and the lower electrode of the wafer is provided. When a high frequency power is applied to the upper electrode, an electromagnetic field is formed between the upper electrode and the lower electrode.

However, the plasma chemical vapor deposition apparatus has the following problems.

First, the shower head supplies a process gas to the upper portion of the wafer by using a spray plate, and a plurality of spray holes are formed in the spray plate. The process gas is unevenly supplied for each region according to the size or arrangement of the injection holes, and the uniformity of the process gas supplied to the upper portion of the wafer affects the process uniformity. Thus, the thickness of the film deposited on the wafer was not uniform. As previously seen, uniformity is one of the important issues associated with the deposition process, and non-uniform films resulted in high electrical resistance on the metal line and increased the probability of mechanical failure.

Second, the magnitude of the electromagnetic field formed between the upper electrode and the lower electrode greatly affects the plasma generated from the process gas. Plasma generation or plasma density may be determined depending on the size of the electromagnetic field. However, since the conventional upper electrode and the lower electrode are fixed in a state spaced at regular intervals, they cannot actively respond to changes in process conditions. That is, even if the composition of the process gas is changed or a high plasma density is required, such process conditions cannot be satisfied using the upper electrode and the lower electrode.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method and apparatus for processing a substrate capable of uniformly supplying a process gas to an upper portion of a wafer.

It is another object of the present invention to provide an apparatus and method for processing a substrate capable of depositing a film of uniform thickness on a wafer.

It is still another object of the present invention to provide a method and apparatus for processing a substrate capable of adjusting a gap between an upper electrode and a lower electrode.

It is still another object of the present invention to provide an apparatus and method for processing a substrate that can satisfy a given process condition.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to an embodiment of the present invention, a method of treating a substrate using plasma includes placing the substrate on a supporting member installed in the process chamber, supplying a source gas into the process chamber, and supporting the substrate. Generating the plasma from the source gas by using an upper electrode disposed on an upper portion of the member and a lower electrode facing the upper electrode, and treating the substrate by using the plasma, wherein the plasma is processed from the source gas. Generating the plasma includes adjusting a distance between the upper electrode and the lower electrode, and discharging the source gas between the upper electrode and the lower electrode.

Adjusting the distance between the upper electrode and the lower electrode may include elevating the upper electrode.

The step of adjusting the interval between the upper electrode and the lower electrode may include measuring the process rate by varying the interval according to various process conditions, determining an optimal interval according to a given process condition from the measured process rate, and the And adjusting the interval between the upper electrode and the lower electrode to the optimum interval.

The supplying the source gas may include adjusting a rotation position of the jet plate provided on the support member and supplying the source gas from the jet plate toward the substrate.

Adjusting the rotational position of the jet plate may be made before supplying the source gas.

The adjusting of the rotational position of the jet plate may include measuring a process rate by varying the rotational position according to various process conditions, determining an optimal rotational position according to a given process condition from the measured process rate, and the It may include adjusting the rotational position of the jet plate to the optimal rotational position.

Adjusting the rotational position of the jet plate may include rotating the jet plate while supplying the source gas.

According to another embodiment of the present invention, a method of treating a substrate using plasma includes placing the substrate on a support member installed in the process chamber, and from the spray plate provided on the support member toward the substrate. Supplying a source gas, discharging the source gas to generate the plasma, and processing the substrate using the plasma, wherein supplying the source gas includes rotating a position of the jet plate. Adjusting.

According to the present invention, a substrate processing apparatus includes a process chamber that provides an internal space in which a process is performed on a substrate, a support member installed inside the process chamber and supporting the substrate, and positioned on an upper portion of the support member. Shower head for supplying the source gas toward the movement, the moving member for moving the shower head, and a plasma generating member for generating a plasma from the source gas.

The plasma generating member may include an upper electrode installed in the shower head and a lower electrode disposed to face the upper electrode.

The moving member may be an elevating member for elevating the shower head. In addition, the moving member may be a rotating member for rotating the shower head.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 14. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto. In addition, hereinafter, a semiconductor manufacturing apparatus 1 having a substrate processing apparatus (or process chamber) 10 performing a deposition process will be described as an example. However, the spirit and scope of the present invention is not limited thereto, and the present invention may be applied to an ashing process, an etching process, or a cleaning process.

2 is a diagram schematically showing a semiconductor manufacturing facility 1 including a substrate processing apparatus 10 according to the present invention.

Referring to FIG. 2, the semiconductor manufacturing facility 1 includes a process facility 2, an Equipment Front End Module (EFEM) 3, and an interface wall 4. The plant front end module 3 is mounted in front of the process plant 2 to transfer the wafer W between the vessel (not shown) in which the wafers W are housed and the process plant 2. The facility front end module 3 has a plurality of loadports 60 and a frame 50. The frame 50 is located between the load port 60 and the process equipment 2. The vessel containing the wafer W is placed on the load port 60 by a transfer means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. Is placed on. The container may be a closed container such as a front open unified pod (FOUP). In the frame 50, a frame robot 70 for transferring the wafer W is installed between the vessel placed in the load port 60 and the process facility 2. In the frame 50, a door opener (not shown) for automatically opening and closing the door of the container may be installed. In addition, the frame 50 may be provided with a fan filter unit (FFU) (not shown) for supplying clean air into the frame 50 so that clean air flows from the top to the bottom in the frame 50. .

The wafer W is subjected to a predetermined process in the process facility 2. The process facility 2 has a loadlock chamber 20, a transfer chamber 30, and a process chamber 10. The transfer chamber 30 has a generally polygonal shape when viewed from the top. The load lock chamber 20 or the process chamber 10 is located at the side of the transfer chamber 30. The loadlock chamber 20 is located on the side adjacent to the facility front end module 3 of the sides of the transfer chamber 30, and the process chamber 10 is located on the other side. The load lock chamber 20 includes a loading chamber 20a in which the wafers W flowing into the process facility 2 temporarily stay in order to proceed with the process, and wafers W exiting the process facility 2 after the process is completed. ) Has an unloading chamber 20b that temporarily stays. The interior of the transfer chamber 30 and the process chamber 10 is maintained at a vacuum, and the interior of the load lock chamber 20 is converted to a vacuum and atmospheric pressure. The load lock chamber 20 prevents foreign contaminants from entering the transfer chamber 30 and the process chamber 10. A gate valve (not shown) is installed between the load lock chamber 20 and the transfer chamber 30 and between the load lock chamber 20 and the facility front end module 3. When the wafer W moves between the facility front end module 3 and the load lock chamber 20, the gate valve provided between the load lock chamber 20 and the transfer chamber 30 is closed and the load lock chamber 20 is closed. When the wafer W is moved between the transfer chamber 30 and the transfer chamber 30, the gate valve provided between the load lock chamber 20 and the facility front end module 3 is closed.

The transfer robot 40 is mounted in the transfer chamber 30. The transfer robot 40 loads the wafer W into the process chamber 10 or unloads the wafer W from the process chamber 10. In addition, the transfer robot 40 transfers the wafer W between the process chamber 10 and the load lock chamber 20.

The process chamber 10 performs a process such as deposition or etching on the wafer W. Hereinafter, the process chamber 10 will be referred to as a substrate processing apparatus 10. Detailed description of the substrate processing apparatus 10 will be described later.

3 is a diagram schematically illustrating the substrate processing apparatus 10 of FIG. 2. 4 is a view illustrating a state in which the showerhead 620 of FIG. 3 moves. FIG. 5 is a perspective view illustrating the jet plate 622 of FIG. 4, and FIG. 6 is a view illustrating a source gas injection using the showerhead 620 of FIG. 3.

As shown in FIG. 3, the substrate processing apparatus 10 for performing a process on the wafer W includes a process chamber 100.

In the present embodiment, the process performed using the substrate processing apparatus 10 is a deposition process, and hereinafter, a high density plasma chemical vapor deposition (HDPCVD) process will be described as an example. As previously seen, the high density plasma chemical vapor deposition process involves the deposition process of depositing a film in a gap formed between metal lines by forming a plasma of high density, and etching etching overhangs on the gap. etching) process. Overhangs growing at the top of the gap close the inlet of the gap to form voids in the gap. Thus, by removing overhangs through the etching process, voids are prevented from forming in the gap.

The support member 200 for supporting the wafer W is installed in the internal space of the process chamber 100. The support member 200 may use an electrostatic chuck (ESC) that can fix the wafer (W) using electrostatic force, and selectively absorb the wafer (W) by a mechanical chuck or a vacuum that can be clamped through a mechanical structure. A vacuum chuck can be used. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W). Details of the supporting member 200 will be described later.

Next, a sidewall of the process chamber 100 communicates with a passage 122 through which the wafer W can enter and a passage 122 so that the wafer W enters into the process chamber 100. ) Is formed. The cross sectional area of the inlet 124 is larger than the cross sectional area of the passage 122. The wafer W enters or exits the process chamber 100 through the inlet 124 and the passage 122.

The door 130 opening and closing one end of the passage 122 connected to the inlet 124 is installed on the inlet 124. The door 130 is connected to the driver 132 and opens and closes one end of the passage 122 while moving in a direction substantially perpendicular to the longitudinal direction of the passage 122 by the operation of the driver 132.

A plurality of exhaust holes 102 are formed in the bottom wall of the process chamber 100, and exhaust lines 104 are connected to the exhaust holes 102, respectively. A pump (not shown) may be installed on the exhaust line 104. The exhaust lines 104 serve as a passage for discharging the gas inside the process chamber 100 to the outside. The reaction gas, the unreacted gas, and the reaction by-product generated in the process chamber 100 are discharged to the outside of the process chamber 100 through the exhaust lines 104, and the pressure inside the process chamber 100 is discharged. In order to maintain the vacuum state, the gas inside the process chamber 100 may be discharged to the outside through the exhaust lines 104.

A gas supply member 600 is provided at an upper portion of the process chamber 100 to supply a source gas into the process chamber 100 so as to perform a deposition or etching process. The gas supply member 600 includes a shower head 620 and a moving member for moving the shower head 620. The moving member includes a support shaft 640 for supporting the shower head 620 and a driver 680 for driving the support shaft 640.

The shower head 620 sprays the source gas toward the wafer W placed on the support plate 220. As shown in FIG. 4, the shower head 620 includes a spray plate 622 having a plurality of spray holes 622a and a fixing holder 621 for fixing the spray plate 622. The fixed holder 621 has a shape in which the lower part is open, and the injection plate 622 is fixed to the lower part. As shown in FIG. 5, the jet plate 622 has a disk shape corresponding to the wafer W, and a plurality of jet holes 622a are formed to penetrate the jet plate 622. A buffer space 624 is formed between the fixed holder 621 and the jet plate 622. Source gas introduced through the gas supply line 660 of FIG. 4 to be described later stays in the buffer space 624 and is discharged to the outside through the plurality of injection holes 622a formed in the injection plate 622.

On the other hand, the source gas supplied into the process chamber 100 is discharged by the upper electrode (300 of FIG. 4), the plasma is generated by the discharge. The upper electrode 300 is installed inside the fixed holder 621. The upper electrode 300 is disposed to be parallel to the jet plate 622 and is disposed above the buffer space 624. An RF power is connected to the upper electrode 300, and the upper electrode 300 becomes a capacitively coupled plasma (CCP) source. On the other hand, as shown in Figure 3, the support plate 220 is grounded, and serves as a lower electrode corresponding to the upper electrode 300. Therefore, when a high frequency power is applied to the upper electrode 300, an electromagnetic field is formed between the upper electrode 300 and the support plate 220, and the source gas inside the process chamber 100 is discharged by the electromagnetic field.

The lower end of the support shaft 640 is connected to the upper surface of the fixed holder 621, the upper end of the support shaft 640 is connected to the driver 680. The driver 680 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotational force is transmitted to the support shaft 640, and as shown in FIG. 4, the support shaft 640 rotates together with the fixed holder 621.

In addition, the driver 680 moves up and down the support shaft 640, and the fixed holder 621 moves up and down together by lifting up and down the support shaft 640. Therefore, as shown in FIG. 4, the distance d between the support plate 220 and the upper electrode 540 may be adjusted. Detailed description thereof will be described later.

On the other hand, the driver 680 is connected to the controller 682, the controller 682 controls the operation of the driver 680. The controller 682 may control all operations of the driver 680 including the rotation speed, the rotation amount, and the rotation direction of the driver 680. In addition, a sealing member (not shown) may be provided between the support shaft 640 and the ceiling wall of the process chamber 100. The sealing member helps to maintain the airtightness inside the process chamber 100 and at the same time enable the rotation of the support shaft 680. The sealing member includes a magnetic seal.

Meanwhile, the gas supply line 660 is connected to one end of the support shaft 640, and the source gas flows inside the gas supply line 660. The gas supply line 660 is opened and closed by the valve 660a. The source gas is a silicon-containing gas comprising silane (SiH ₄ ) and an oxygen-containing gas comprising oxygen (O ₂ ). Source gas is introduced into the buffer space 624 through the internal flow path of the support shaft 640.

Therefore, as shown in FIG. 6, the source gas supplied through the gas supply line 660 is introduced into the buffer space 624 through the internal flow path of the support shaft 640, and then formed in the injection plate 622. It is discharged downward through the plurality of injection holes (622a).

7 and 8 are views schematically showing the support member 200 of FIG. FIG. 9 is a perspective view schematically illustrating the supporting member of FIG. 6, and FIG. 10 is a cross-sectional view taken along the line II ′ of FIG. 8.

As shown in FIGS. 7 and 8, the support member 200 includes a support plate 220, a drive shaft 240, a driver 260, and a controller 280.

The wafer W is placed side by side with the support plate 220 on the support plate 220. The support plate 220 is made of aluminum, so that the pattern formed on the wafer W may react with the support plate 220. Accordingly, the protective layer 221 of a ceramic material may be formed on the upper surface of the support plate 220, and the ceramic material may include aluminum oxide (Al ₂ O ₃ ).

One end of the drive shaft 240 is connected to the lower portion of the support plate 220, and the other end of the drive shaft 240 is connected to the driver 260. The driver 260 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotational force is transmitted to the drive shaft 240, the drive shaft 240 rotates together with the support plate 220.

A sealing member 241 is provided between the drive shaft 240 and the bottom wall of the process chamber 100. The sealing member 241 of FIG. 3 helps to maintain the airtightness inside the process chamber 100 and to allow the rotation of the drive shaft 240. The sealing member 241 includes a magnetic seal.

The driver 260 is connected to the controller 280, which controls the operation of the driver 260. The controller 280 may control all operations of the driver 260 including the rotation speed, the rotation amount, and the rotation direction of the driver 260.

As shown in FIG. 8, the first cooling line through which the cooling gas flows and the second cooling line through which the cooling fluid flows are formed in the support plate 220.

The first cooling line supplies a cooling gas to the rear surface of the wafer W placed on the support plate 220, and the wafer W is cooled to a predetermined temperature by the cooling gas. High temperature heat is generated during the process, and particularly high temperature heat is generated in the etching process by sputtering during the high density plasma chemical vapor deposition process. As a result, the temperature of the wafer W may increase, and the first cooling line cools the wafer W using a cooling gas.

The first cooling line includes a cooling gas flow path 222, a distribution line 224, and a plurality of branch lines 226. As shown in FIG. 10, the cooling gas flow path 222 is formed at the center of the support plate 220, and a lower end of the cooling gas flow path 222 is formed at the center of the drive shaft 240. Is connected with the top of the. The distribution line 224 extends in the radial direction of the support plate 220 from the cooling gas flow path 222. The branch lines 226 branch from the distribution line 224 and extend toward the upper portion of the support plate 220, and are connected to the plurality of ejection openings 228 formed on the protective layer 221, respectively.

A lower end of the cooling gas flow path 242 formed at the center of the drive shaft 240 is connected to the cooling gas line 244, and the cooling gas supplied to the rear surface of the wafer W flows in the cooling gas line 244. The cooling gas contains an inert gas, and the inert gas contains helium (He).

The cooling gas supplied to the cooling gas passage 242 through the cooling gas line 244 is supplied to each branch line 226 through the cooling gas passage 222 and the distribution line 224, and the supplied cooling gas is It is supplied to the back surface of the wafer W through the jet holes 228.

As shown in FIG. 9, the plurality of support protrusions 229 are provided on the protective layer 221. The plurality of support protrusions 229 are disposed at equal intervals in four directions with respect to the center and the center of the support plate 220, and support the rear surface of the wafer W placed on the support plate 220.

Accordingly, the wafer W is supported by the plurality of support protrusions 229 to be kept at a predetermined distance from the upper surface of the protective layer 221, and the wafer W is supported by the cooling gas supplied to the rear surface. Controlled to a constant temperature.

The second cooling line 232 is located below the distribution line 224, and as shown in FIG. 10, the second cooling line 232 has a spiral shape disposed to surround the cooling gas flow path 222. . The second cooling line 232 cools the temperature of the support plate 220 to a predetermined temperature. As mentioned above, the temperature of the support plate 220 may increase due to the high temperature heat generated in the deposition process, particularly the high density plasma chemical vapor deposition process. Therefore, the support plate 220 is cooled using the second cooling line 232.

As shown in FIG. 8, one end of the second cooling line 232 is connected to the cooling fluid supply line 234, and the other end of the second cooling line 232 is connected to the cooling fluid recovery line 236. The cooling fluid supply line 234 is opened and closed by a valve 234a installed on the cooling fluid supply line 234. Cooling fluid flows in the cooling fluid supply line 234, and supplies cooling fluid to the second cooling line 232. The cooling fluid supplied through the cooling fluid supply line 234 moves along the second cooling line 232 to the end where the cooling fluid recovery line 236 is connected to cool the support plate 220 to a predetermined temperature. Thereafter, the cooling fluid is recovered through the cooling fluid recovery line 236, and the recovered cooling fluid is cooled to a predetermined temperature through a chiller (not shown) and then supplied to the cooling fluid supply line 234 again. Can be.

11 to 13 are flowcharts illustrating a substrate processing method according to the present invention, and FIG. 14 is a view illustrating a state in which the substrate processing apparatus of FIG. 3 operates. 11 to 14 will be described in detail the substrate processing method according to the present invention.

First, the wafer W is loaded on the support member 200 in the process chamber 100 (S10). When the door 130 is opened by the driver 132, the wafer W is introduced into the process chamber 100 through the passage 122 and is formed on the support protrusion 229 on the support member 200. Is placed. As described above, the wafer W may be fixed on the support plate 220 by an electrostatic force.

Next, plasma is generated in the process chamber 100 (S20). Specific methods for generating plasma are as follows. First, by rotating the support shaft 640 to determine the rotation position (θ) of the shower head (620) (S110). The rotational position θ of the shower head 620 determines the process uniformity with respect to the wafer W. Second, the distance d between the upper electrode 300 and the support plate 220 is determined by elevating the upper electrode 300 (S120). The interval d between the upper electrode 300 and the support plate 220 determines whether plasma is generated or the plasma density of the generated plasma. In the present exemplary embodiment, the upper electrode 300 is elevated, but the support plate 220 may be elevated. Since such application is obvious to those skilled in the art, detailed description thereof will be omitted. Third, the source gas is supplied to the upper portion of the wafer W using the gas supply member 600 (S130). Source gas flowing in the gas supply line 660 is supplied into the process chamber 100 through the interior of the support shaft 640 and the buffer space 624. Fourth, the supplied source gas is discharged (S140). When a high frequency power is applied to the upper electrode 300, an electromagnetic field is formed between the upper electrode 300 and the support plate 220, and the source gas inside the process chamber 100 is discharged to generate plasma. This is a capacitively coupled plasma source method.

Alternatively, the source gas can be discharged using an inductively coupled plasma source method. When energy is applied to the inside of the process chamber 100 using a coil (not shown), the energy is transferred to the top of the wafer W through the sidewall of the process chamber 100, and is supplied to the top of the wafer W. The source gas is discharged to generate plasma from the source gas.

Next, a film is deposited in the gap of the wafer W using the generated plasma (S30). The resulting plasma is supplied onto the wafer W, and a film is deposited in the gap of the wafer W. Thereafter, as described above, etching is performed to remove the overhang grown on the gap, and when the etching is completed, the deposition process is repeated in the same manner. Through this method, the gap of the wafer W is filled.

Looking at the method of determining the rotation position (θ) of the shower head 620 in more detail as follows. The shower head 620 includes a spray plate 622, and a plurality of spray holes 622a penetrating the spray plate 622 are formed on the spray plate 622. However, the jets 622a are not seen to exhibit a completely uniform distribution or have a completely uniform size. In addition, there may be various non-uniformities. Therefore, the source gas injected through the injection holes 622a may be supplied unevenly according to the region, and thus, the plasma supplied on the wafer W may be supplied unevenly according to the region. In addition, the process uniformity on the wafer W is lowered, and a film of non-uniform thickness may be deposited on the wafer W. FIG. In order to prevent this, the step of determining the rotational position θ of the showerhead 620 is required.

The rotational position θ of the shower head 620 may be adjusted while supplying the source gas, and may be adjusted before supplying the source gas. That is, by supplying the source gas into the process chamber 100 while rotating the shower head 620 (by the rotation of the support shaft 640), it is possible to eliminate the non-uniformity according to the area, and before the source gas supply By fixing 620 at the optimum rotational position θ, it is possible to eliminate nonuniformity along the region. The latter will be described in detail below.

The substrate processing method described below is characterized in that the process variables are set in advance before the process for the wafer W is performed. Process variables refer to variables that can be adjusted by the user to obtain the intended process results, and include process conditions such as process temperature, process pressure, and process time. In the present embodiment, the rotation position θ of the shower head 620 is included, and the rotation position θ of the shower head 620 is set before the process is performed. In this respect, the showerhead 620 is continuously rotated during the process. The reason for including the rotational position θ of the showerhead 620 in the process variable is the same as the reason for continuously rotating the showerhead 620 during the process, and depositing a film having a uniform thickness on the entire surface of the wafer W. It is to.

Looking at the method of adjusting the rotation position (θ) of the shower head 620 in more detail as follows. First, the process rate according to the generation position is measured while varying the rotational position θ according to various process conditions (type of source gas or density of plasma, type of film, process rate, etc.) (S210). The measured value may be stored in a separate storage device (database).

Secondly, the optimum rotation position θ is determined from the measured process rate (S220). That is, when the actual process conditions are given, for example, the deposition rate for the specific film to be deposited in the gap of the wafer W or the density of the plasma used in the process is determined, the optimum to satisfy such process conditions The rotation position of is determined by the measured value.

Third, the rotation position θ of the shower head 620 is adjusted to the optimal rotation position θ (S230). The adjusting method is as described above.

According to the above-described method, since the shower head 620 (or the rotational position θ of the jetting plate 622) can be set to the optimal rotational position θ, the nonuniformity according to the region can be eliminated and the wafer ( A film of uniform thickness can be deposited on the entire surface of W). In particular, when a plurality of processes are continuously performed in one process chamber 100, for example, when the second film is deposited again after the first film is deposited, the rotational position θ and the second relative to the first film are deposited. By adjusting the rotational position θ differently for the film, a more complete process can be performed.

Looking at the method of adjusting the interval (d) between the upper electrode 300 and the support plate 220 in more detail as follows. First, the process rate according to the production position is measured while varying the interval d in various ways according to various process conditions (type of source gas or density of plasma, type of film, process rate, etc.) (S310). The measured value may be stored in a separate storage device (database).

Secondly, the optimum interval d is determined from the measured process rate (S320). That is, when the actual process conditions are given, for example, the deposition rate for the specific film to be deposited in the gap of the wafer W or the density of the plasma used in the process is determined, the optimum to satisfy such process conditions The interval between is determined by the measured value.

Thirdly, the upper electrode 300 adjusts the interval d between the support plates 220 to an optimal interval d (S30). The adjusting method is as described above.

According to the above-described method, since the distance d between the upper electrode 300 and the support plate 220 can be set to the optimum distance d, a more complete process can be achieved. In particular, when a plurality of processes are continuously performed in one process chamber 100, for example, when the second film is deposited again after the first film is deposited, the distance d to the first film and the second film are deposited. By adjusting the interval (d) differently for a more complete process can be performed.

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, the process gas can be uniformly supplied to the upper portion of the wafer. It is also possible to deposit a film of uniform thickness on the wafer. In addition, the distance between the upper electrode and the lower electrode can be adjusted. It can also meet given process conditions.

Claims (15)

delete delete In the method of processing a substrate using a plasma, Placing the substrate on a support member installed in the process chamber; The source gas is supplied into the process chamber, and the upper electrode provided on the support member is lifted to adjust the distance between the upper electrode and the lower electrode facing the upper electrode, and the upper electrode and the lower Discharging said source gas between electrodes to produce said plasma; And Treating the substrate using the plasma, Adjusting the distance between the upper electrode and the lower electrode, Measuring a process rate by varying the interval according to various process conditions; Determining an optimal interval according to a given process condition from the measured process rate; And And adjusting an interval between the upper electrode and the lower electrode to the optimum interval. The method of claim 3, Supplying the source gas, Adjusting the rotational position of the jet plate provided on the support member; And And supplying a source gas from the jet plate toward the substrate. The method of claim 4, wherein And adjusting the rotational position of the jet plate is performed before supplying the source gas. The method of claim 4, wherein Adjusting the rotation position of the jet plate, Measuring a process rate by changing the rotation position according to various process conditions; Determining an optimum rotational position according to a given process condition from the measured process rate; And And adjusting the rotational position of the jet plate to the optimal rotational position. The method of claim 4, wherein And adjusting the rotation position of the jet plate comprises rotating the jet plate while supplying the source gas. In the method of processing a substrate using a plasma, Placing the substrate on a support member installed in the process chamber; Supplying a source gas toward the substrate from an injection plate provided on the support member, and discharging the source gas to generate the plasma; And Treating the substrate using the plasma, And supplying the source gas comprises adjusting a rotational position of the jet plate. The method of claim 8, And adjusting the rotational position of the jet plate is performed before supplying the source gas. The method of claim 8, Adjusting the rotation position of the jet plate, Measuring a process rate by changing the rotation position according to various process conditions; Determining an optimum rotational position according to a given process condition from the measured process rate; And And adjusting the rotational position of the jet plate to the optimal rotational position. The method of claim 8, And adjusting the rotation position of the jet plate comprises rotating the jet plate while supplying the source gas. A process chamber providing an internal space in which a process is performed on the substrate; A support member installed inside the process chamber and supporting the substrate; A shower head positioned at an upper portion of the support member and configured to supply a source gas toward the support member; A moving member moving the shower head; And Substrate processing apparatus comprising a plasma generating member for generating a plasma from the source gas. The method of claim 12, The plasma generating member includes an upper electrode disposed in the shower head and a lower electrode disposed to face the upper electrode. The method according to claim 12 or 13, And the movable member is an elevating member for elevating the shower head. The method of claim 12, The moving member is a substrate processing apparatus, characterized in that the rotating member for rotating the shower head.

Images