KR20080059609A - 과산화수소-함유 ｃｍｐ 슬러리의 가사 시간 증진을 위한조성물 및 방법 - Google Patents

과산화수소-함유 ｃｍｐ 슬러리의 가사 시간 증진을 위한조성물 및 방법 Download PDF

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Publication number
KR20080059609A
KR20080059609A KR1020087010173A KR20087010173A KR20080059609A KR 20080059609 A KR20080059609 A KR 20080059609A KR 1020087010173 A KR1020087010173 A KR 1020087010173A KR 20087010173 A KR20087010173 A KR 20087010173A KR 20080059609 A KR20080059609 A KR 20080059609A
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KR
South Korea
Prior art keywords
composition
ppm
less
slurry
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087010173A
Other languages
English (en)
Korean (ko)
Inventor
유천 왕
빈 루
존 파커
로저 마틴
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20080059609A publication Critical patent/KR20080059609A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087010173A 2005-09-29 2006-09-15 과산화수소-함유 ｃｍｐ 슬러리의 가사 시간 증진을 위한조성물 및 방법 Ceased KR20080059609A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/238,236 2005-09-29
US11/238,236 US20070068901A1 (en) 2005-09-29 2005-09-29 Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries

Publications (1)

Publication Number Publication Date
KR20080059609A true KR20080059609A (ko) 2008-06-30

Family

ID=37622044

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087010173A Ceased KR20080059609A (ko) 2005-09-29 2006-09-15 과산화수소-함유 ｃｍｐ 슬러리의 가사 시간 증진을 위한조성물 및 방법

Country Status (8)

Country Link
US (2) US20070068901A1 (https=)
EP (1) EP1929071A1 (https=)
JP (1) JP2009510773A (https=)
KR (1) KR20080059609A (https=)
CN (1) CN101316950B (https=)
IL (1) IL190426A (https=)
TW (1) TWI316096B (https=)
WO (1) WO2007040956A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011054193A1 (zh) * 2009-11-06 2011-05-12 Wang Chen 一种化学机械抛光液
WO2011097954A1 (zh) * 2010-02-11 2011-08-18 安集微电子（上海）有限公司 一种用于钨化学机械抛光方法
CN103409757B (zh) * 2013-08-26 2016-01-20 中核(天津)科技发展有限公司 一种环保型铜制品用化学抛光液及其制备方法
CN104451853B (zh) * 2014-11-06 2016-08-24 燕山大学 一种镍毛细管内表面的抛光方法
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
KR102808137B1 (ko) * 2018-07-20 2025-05-16 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
GB9326522D0 (en) * 1993-12-29 1994-03-02 Solvay Interox Ltd Process for stabilising particulate alkali metal percarbonate
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US20040198584A1 (en) * 2003-04-02 2004-10-07 Saint-Gobain Ceramics & Plastic, Inc. Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution

Also Published As

Publication number Publication date
JP2009510773A (ja) 2009-03-12
EP1929071A1 (en) 2008-06-11
US20070068901A1 (en) 2007-03-29
CN101316950A (zh) 2008-12-03
IL190426A0 (en) 2008-11-03
TW200734487A (en) 2007-09-16
TWI316096B (en) 2009-10-21
US20080132071A1 (en) 2008-06-05
CN101316950B (zh) 2011-08-24
IL190426A (en) 2012-12-31
WO2007040956A1 (en) 2007-04-12

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