KR20080054495A - Integrated semiconductor module for switched reluctance motor - Google Patents

Abstract

A high integrated semiconductor module for a switched reluctance motor is provided to enhance the reliability of an element by incorporating overcurrent and low voltage protection functions, and a thermistor capable of monitoring temperature of the module in the semiconductor module. A high integrated semiconductor module(300) for a switched reluctance motor includes a first switching element(321), a high-voltage integrated circuit(310H), a second switching element(322), a low-voltage integrated circuit(310L), and first and second diodes(331,332). The first switching element is configured to allow a driving current to flow on one input terminal of the switched reluctance motor. The high-voltage integrated circuit controls a switching operation of the first switching element. The second switching element is configured allow the driving current to be extracted from the other input terminal of the switched reluctance motor. The low-voltage integrated circuit controls a switching operation of the second switching element. When the first and second switching elements are turned off, the first and second diodes for feeding back the current is integrated in one semiconductor package.

Description

Integrated semiconductor module for Switched Reluctance Motors

1 is a block diagram schematically illustrating a general single-phase SRM driving apparatus.

2 is a view illustrating a structure of a motor driving unit of a general SRM.

3 is a diagram illustrating a semiconductor module for driving a single phase switched reluctance motor (SRM) according to an embodiment of the present invention.

4 is a view illustrating an application of a single-phase SRM driving semiconductor module according to an embodiment of the present invention.

5 is a view showing the external appearance of the semiconductor module package for driving a single-phase SRM of the present invention.

6 is a diagram illustrating a semiconductor module for driving a two-phase switched reluctance motor (SRM) according to an embodiment of the present invention.

7 is a diagram illustrating an application of a two-phase SRM driving semiconductor module according to an embodiment of the present invention.

8 is a view showing a bottom perspective view and a top perspective view of a semiconductor module package for driving a two-phase SRM of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit for driving a motor, and more particularly, to a semiconductor module for driving a switched reluctance motor in which a circuit for driving a switched reluctance motor (SRM) is integrated and modularized.

A switched reluctance motor (hereinafter referred to as SRM) is a motor in which a switching control device is combined, and both the stator and the rotor have a salient pole structure. In particular, the winding is wound only on the stator part, and the structure is simple because there is no winding or permanent magnet of any type in the rotor part. Due to this structural feature, it has considerable advantages in terms of manufacturing and production, and has good starting characteristics and high torque as in DC motors, while requiring less maintenance and repair, torque per unit volume, and efficiency. And the field of use is gradually increasing because it has excellent characteristics in many parts, such as the rating of the converter.

1 is a block diagram schematically illustrating a general single phase SRM driving apparatus.

Referring to FIG. 1, the SRM driving apparatus supplies a rectifying and smoothing circuit unit 102 to rectify and smooth an AC voltage applied from a commercial (AC) power source 101 into a DC voltage, and the rectifying and smoothing circuit unit 102. Hall sensor for sensing the position and speed of the motor driver 103 and the motor 104 for driving the motor 104 by receiving the control signal from the voltage and the microcomputer 106 and outputs a signal to the microcomputer 106 It consists of 105.

The rectifying and smoothing circuit unit 102 rectifies and smoothes the input commercial power supply 101. The rectified and smoothed voltage is supplied to the motor driver 103, and the motor driver 103 supplies a voltage to the motor according to the control signal of the microcomputer 106. The hall sensor 105 detects the rotational speed and phase of the motor to generate a signal, and the microcomputer 106 controls the motor driver 103 by inputting the signal generated by the hall sensor, and the motor driver ( In step 103, the voltage supplied to the motor 104 is controlled.

2 is a view illustrating a structure of a motor driving unit of a general SRM.

The motor driver of the SRM includes a rectifier (not shown) for rectifying the input AC power, a DC link capacitor 201 for supplying a smooth and smooth DC voltage to the rectified voltage, and the DC link capacitor 201. Connected in parallel with each other and connected in series to be turned on or off in accordance with a drive signal of a switch driver (not shown) for outputting a gate drive signal for rotating the motor in a forward or reverse direction according to a position signal of the rotor of the SRM 207. The lower windings 202 and 203, the motor winding 206 generating torque according to the on and off operations of the upper and lower switching devices 202 and 203, and one end and the lower of the upper switching device 202. The first diode 204 connected between one end of the switching element 203 and the second diode 205 connected between the other end of the upper switching element 202 and the other end of the lower switching element 203.

When an AC voltage is supplied from the outside, it is rectified in a rectifying stage (not shown) made of a bridge diode and the like, and the rectified voltage is smoothed in the DC link capacitor 201. The smoothed DC voltage is supplied to the motor winding 206 by the switching operation of the upper and lower switching elements 202 and 203. That is, the upper switching element 202 and the lower switching element 203 are turned on for a predetermined time according to the position of the rotor and the stator of the SRM 207, so that the DC link capacitor 201, the upper switching element 202, A current path is formed by the motor winding 206 and the lower switching element 203 to apply a voltage to the motor winding 206 and generate a magnetic force in the stator of the SRM 207 to attract the rotor. As a result, the SRM rotates. When the upper and lower switching elements 202 and 203 are turned off at the same time, the phase current applied to the winding is applied to the first diode 204, the motor winding 206, the second diode 205, and the DC link capacitor. It is removed via 201.

As such, the SRM drives the motor by supplying or blocking a voltage to the motor according to the on and off of the upper and lower switching elements constituting the motor driving unit. At this time, when the control signal applied to the upper and lower switching elements is input to the microcomputer by detecting the phase of the motor in the hall sensor as described in FIG. 1, the microcomputer performs the PWM duty ratio (PWM) by performing a PWM signal input from the hall sensor. duty ratio) to control the on and off operation of the upper and lower switching elements.

In the semiconductor package, one or more semiconductor chips are mounted on a chip pad in a lead frame, and then sealed with an epoxy molding compound (EMC) to protect the inside, and then, a printed circuit. It is mounted on a substrate (PCB) and used. In recent years, with the rapid progress of high speed, high capacity, and high integration of electronic devices, power devices applied to automobiles, industrial devices, and home appliances are also faced with the need to achieve miniaturization and light weight at low cost. At the same time, power devices must achieve low heat generation and high reliability. As a method for satisfying such demands, power module packages for mounting a plurality of semiconductor chips in one semiconductor package have been generalized. In the case of SRM as well, modularization of the drive circuit for driving the motor can meet the requirements of light weight, compactness, high efficiency, high reliability and low cost, but the module for SRM is still in the development stage.

Accordingly, an object of the present invention is to provide a highly integrated semiconductor module for driving an SRM, in which a circuit for driving an SRM is mounted in one semiconductor package, thereby improving efficiency and reliability.

In order to achieve the above technical problem, a highly integrated semiconductor module for driving a switched reluctance motor according to the present invention, in the driving circuit for driving a single-phase switched reluctance motor (SRM), the switched reluctance A first switching element for flowing a driving current to one input terminal of the motor; A high voltage integrated circuit controlling a switching operation of the first switching device; A second switching element for extracting current from the other input terminal of the switched reluctance motor; A low voltage integrated circuit controlling a switching operation of the second switching element; And first and second diodes for recirculating current when the first and second switching devices are turned off in one semiconductor package.

In the present invention, the low voltage integrated circuit may output a fault-out signal to the outside or receive a fault-out signal from the outside when a fault such as an overcurrent or a low voltage is detected in the module. It includes an out terminal.

The module may further include a thermistor that senses a temperature inside the module and changes a resistance value according to a temperature change in the module.

The first and second switching devices may be an insulated gate bipolar transistor (IGBT) or a power MOSFET (MOSFET).

The semiconductor module has a dual in-line package (DIP) structure in which terminals for input and output of each signal are provided at both sides of the package. The high voltage integrated circuit, the low voltage integrated circuit, and the first and second switching devices are disposed on a DBC substrate.

In order to achieve the above technical problem, the semiconductor module for driving a switched reluctance motor according to the present invention is a driving circuit for driving a two-phase switched reluctance motor (SRM). First and second switching elements for flowing a driving current to the first and second input terminals; A first high voltage integrated circuit controlling a switching operation of the first switching device; A second high voltage integrated circuit controlling a switching operation of the second switching device; A third fourth switching element for extracting a driving current from third and fourth input terminals of the switched reluctance motor; A low voltage integrated circuit controlling a switching operation of the third and fourth switching devices; And first to fourth diodes for recirculating current when the first to fourth switching devices are turned off in one semiconductor package.

In the present invention, the low voltage integrated circuit preferably includes a fault-out terminal for outputting a fault-out signal to the outside when a fault such as an overcurrent or a low voltage is detected in the module.

The module may further include a thermistor configured to sense a temperature inside the module and change a resistance value according to a temperature change in the module.

The first and second switching devices may be an insulated gate bipolar transistor (IGBT) or a power MOSFET (MOSFET).

The display device may further include first and second bootstrap diodes disposed to be connected to each other to apply a bootstrap voltage to the first high voltage integrated circuit and the second high voltage integrated circuit. Each anode of the first and second bootstrap diodes is commonly connected to each voltage input terminal of the first and second high voltage integrated circuits, and each cathode of the first and second bootstrap diodes is connected to the first and second bootstrap diodes. 2 is connected to each floating voltage terminal of the high voltage integrated circuit.

The module is arranged in a single in-line package (SIP) structure in which terminals for input and output of each signal are provided on one side of the package. The first and second high voltage integrated circuits, the low voltage integrated circuits, and the first to fourth switching devices are disposed on an insulating metal substrate (IMS) substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as limited by the embodiments described below.

3 is a diagram illustrating a semiconductor module for driving a switched reluctance motor (SRM) according to an embodiment of the present invention, which illustrates a semiconductor module for driving a single phase SRM.

Referring to FIG. 3, the single-phase SRM driving semiconductor module 300 according to an embodiment of the present invention includes a high pressure side driver and a low pressure side driver. The high voltage side driver includes a high voltage integrated circuit 310H and a first switching device 321, and the low voltage side driver includes a low voltage integrated circuit 310L and a second switching device 322. As illustrated, the first and second switching devices 321 and 322 may be formed of an insulated gate bipolar transistor (IGBT), and in some cases, may be formed of another power transistor such as a power MOSFET. It may be configured.

The high voltage integrated circuit 310H outputs a switching control signal for controlling on and off of the first switching element 321.

The high voltage integrated circuit 310H has a floating voltage terminal VB, a supply voltage terminal VCC, a common ground terminal COM, an input terminal IN, an output terminal OUT, and a floating return voltage terminal VS. The high voltage side floating voltage terminal VB is used to receive the floating voltage V _B from the outside, and the supply voltage terminal VCC is used to receive the supply voltage V _cc from the outside. The common ground terminal COM is used to receive the common ground signal COM from the outside, and the input terminal IN is used to receive the driving input signal IN _(H) from the outside.

The output terminal OUT is used to output the high voltage side switching control signal by the driving input signal IN _(H) input through the input terminal IN. The switching control signal output from the output terminal OUT of the high voltage integrated circuit 310H is input to the gate of the first switching element 321 to turn on or turn off the first switching element 321.

The low voltage integrated circuit 310L outputs a switching control signal for controlling on and off of the second switching element 322. The low voltage integrated circuit 310L includes a short circuit current terminal (CSC), a fault-out duration terminal (CFOD), a fault-out terminal (VFO), an input terminal (IN (L)), a common ground terminal (COM), It has a supply voltage terminal VCC and an output terminal OUT (L).

Short-circuit current terminal (CSC) roneun the short circuit protection signal is input, the fault-out terminal (VFO) is an external fault - for receiving an out-signals (V _FO) - output the out signals (V _FO) or the fault from outside Used. Specifically, when a fault is detected internally, for example, when an overcurrent is detected or a low supply voltage V _cc is input, a fault-out signal V _FO is output to prevent the device from being destroyed. The semiconductor module 300 is shut down. Alternatively, the fault-out signal V _FO may be input through the fault-out terminal VFO to externally shut down the module 300.

The fault-out duration terminal CFOD is input with a signal for determining a duration for shutting down the module when a fault-out situation occurs. A capacitor of a predetermined capacity is connected to the fault-out duration terminal (CFOD) to adjust the shutdown time through charging and discharging of the capacitor.

The input terminal IN (L) of the low voltage integrated circuit 310L is used to receive an input signal of the low voltage side. The common ground terminal COM is used to receive the common ground signal COM from the outside, and the supply voltage terminal VCC is used to receive the supply voltage. The output terminal OUT (L) is used to output a switching control signal for controlling the on and off of the second switching element 322. The switching control signal output from the output terminal OUT (L) of the low voltage integrated circuit is input to the gate of the second switching element 322 to turn on or off the second switching element 322.

Next, a power supply terminal P for driving SRM is connected to the collector of the first switching element 321 on the high voltage side, an output terminal OUT of the high voltage integrated circuit 310H is connected to the gate, and an emitter A first output terminal A for outputting a driving signal to the SRM is connected. In addition, a capacitor may be connected to the gate and the emitter of the first switching device 321 outside the module to adjust the switching speed of the first switching device.

A second output terminal B for outputting a driving signal to the SRM is connected to the collector of the second switching element 322 on the low voltage side, and an output terminal OUT (L) of the low voltage integrated circuit 310L is connected to the gate. The emitter is connected to the negative power terminal (N _B1 , N _B2 ). A capacitor for controlling the switching speed is also connected between the gate and the emitter of the second switching device 322 from the outside of the module. The (-) power terminal (N _A , N _B1 , N _B2 ) is a terminal through which the current supplied to the power terminal (P) exits through the device and the SRM inside the module, and provides a shunt resistor outside the module. Can be connected to detect current.

When the first switching element 321 and the second switching element 322 are turned off at the same time, the first diode 331 and the second diode 332 for discharging the current is disposed. One end of the first diode 331 is connected between the collector and power supply terminal P of the first switching element 321, and the other end thereof is connected to the second output terminal B. One end of the second diode 332 is connected between the emitter of the first switching device 321 and the first output terminal A, and the other end is connected to the negative power supply terminal N _A. When the first switching element 321 and the second switching element 322 are turned off at the same time, the current applied to the motor is transferred through the first diode 331, the motor winding (not shown), and the second diode 332. Removed.

Meanwhile, in the semiconductor module of the present invention, a thermistor 340 for sensing an internal temperature of the module and protecting the internal circuit is integrated. The thermistor 340 is formed of, for example, a negative temperature coefficient (NTC) thermistor having a characteristic of decreasing electrical resistance when the temperature rises. One end of the thermistor 340 is connected to the terminal (R _TH ) that can measure the electrical resistance value according to the temperature change in the module 300, the other end is a change in the electrical resistance value by the thermistor It is connected to the terminal (V _TH ) which supplies the voltage for measurement. An external resistor (not shown) is connected to the terminal R _TH to measure a change in the resistance of the thermistor 340, and a change in resistance of the thermistor 340 is measured at the terminal V _TH . In order to supply a voltage of about 5V.

As such, by integrating the thermistor 340 into the module, it is possible to easily grasp the temperature change inside the module and to prevent the malfunction or destruction of the device due to the excessive temperature change in advance.

Meanwhile, the high voltage integrated circuit 310H and the low voltage integrated circuit 310L of the present invention have a low voltage lock out function to prevent the switching devices from operating under an insufficient driving voltage. The driving voltage for controlling and driving the switching elements is supplied from a 15V DC power source connected between the supply voltage terminal VCC and the common ground terminal COM of the module. This voltage is regulated to 15V ± 10% for stable operation. When the driving voltages VCC and VB fall below a predetermined low voltage lockout level, the switching element 321 connected to the high voltage integrated circuit 310H and the switching element 322 connected to the low voltage integrated circuit 310L are inputted. It is turned off regardless of the pulse signal so that no current flows.

In addition, the low voltage integrated circuit 310L has a function of protecting a device in a module when a short circuit is formed. That is, the low voltage integrated circuit 310L monitors a voltage input to the short-circuit current terminal CSC to generate a fault-out signal when the voltage exceeds the predetermined reference voltage V _{SC ( ref )} . Turn off the switching device.

As such, when the driving voltage falls below a predetermined level or when a short circuit is formed and excessive current flows, the switching devices are turned off, thereby preventing damage or destruction of the device due to an abnormal operation.

4 is a view illustrating an application of a single-phase SRM driving semiconductor module according to the present invention. The same reference numerals as in FIG. 3 denote the same elements.

The first output terminal A and the second output terminal B of the semiconductor module 300 are connected to the single phase SRM 400 to drive the SRM. _A power source 410 for supplying a voltage to the semiconductor module 300 is disposed between the power supply terminal P and the negative power supply terminals N _A , N _B1 and N _B2 of the semiconductor module 300. The DC link capacitor 411 is disposed in parallel with the power source 410.

The bootstrap diode 420 and the bootstrap resistor 421 for power supply to the high voltage integrated circuit 310H are connected to the high voltage side floating voltage terminal V _B , and the first output terminals A and V _{S (} Capacitors 430 and 431 for power supply stability are connected between _H) ) and the high voltage side floating voltage terminal V _B. Between the floating return voltage terminal Vs and the first output terminal A of the semiconductor module 300, the noise of the signal input to the floating return voltage terminal Vs is removed, and the first switching device connected to the high voltage integrated circuit. A resistor R _{E (H} ) is connected to control the switching speed by changing the gate resistance.

The elements in the high voltage integrated circuit 310H and the low voltage integrated circuit 310L are connected to the high voltage integrated circuit supply voltage terminal V _{CC (H)} and the low voltage integrated circuit supply voltage terminal V _{CC (L} ) of the semiconductor module 300. DC voltage of about 15V is applied to supply an operating voltage (not shown), and capacitors for power stabilization between the power supply terminal V _CC and the ground terminal COM of the high voltage integrated circuit and the low voltage integrated circuit. 440 and 441 are disposed.

A short circuit protection signal is input to the short circuit current terminal C _SC of the semiconductor module 300 through a filter including a capacitor 450 and a resistor 451. The fault-out duration terminal C _FOD is connected with a capacitor 452 for determining the fault-out time.

The high voltage side input signal terminal IN _(H) and the low voltage side input signal terminal IN _(L ) of the semiconductor module 300 are connected to the microprocessor (CPU) 500, and the microprocessor (CPU) 500. The input signal for the operation of the high voltage integrated circuit 310H and the low voltage integrated circuit 310L in the module 300 is supplied. In this process, filters may be disposed between the microprocessor (CPU) 500 and the module 300 to remove noise.

In addition, the fault out terminal V _FO of the semiconductor module 300 is also connected to the microprocessor (CPU) 500. The fault out terminal (V _FO ) is a bidirectional terminal, which transmits fault out information from the semiconductor module 300 to the microprocessor (CPU) 500, and issues a fault out command from the microprocessor (CPU) 500. It also receives input.

The operation of the SRM driving device configured as described above will be briefly described, through the power source 410 and the DC link capacitor 411 from the outside. The input voltage is supplied to the SRM 400 by the switching operation of the first switching element 321 and the second switching element 322. The high voltage integrated circuit 310H and the low voltage integrated circuit 310L control on and off of the first switching element 321 and the second switching element 322 according to the control signal of the microprocessor 500. When a voltage is supplied to the motor by the switching operation of the first and second switching elements, the first switching element 321 and the second switching element 322 are fixed for a predetermined time depending on the position of the rotor and the stator of the SRM 400. When turned on, a current path is formed by the DC link capacitor 411, the first switching device 321, the motor 400, and the second switching device 322 so that the SRM 400 rotates. Thereafter, when the first and second switching devices 321 and 322 are turned off according to the control signal of the microprocessor 500, the current applied to the motor 400 is applied to the first diode 331 and the motor 400. ), The second diode 332 and the DC link capacitor 411 are removed.

5 is a view showing the external appearance of a semiconductor module package for driving a single-phase SRM according to the present invention.

As shown, the semiconductor module package of the present invention has a dual inline package (DIP) structure in which pins 370 for signal transmission to the outside of the module are disposed on both sides of the molding member 360. have. The package has a structure in which a semiconductor device such as a high voltage integrated circuit (not shown) is disposed on a direct bonded copper (DBC) substrate, and the side and top surfaces of the DBC substrate are surrounded by a molding material 360. The bottom surface 380 of the DBC substrate protrudes to the outside of the molding material 360, and the heat inside the power module package is easily discharged to the outside by the protruding bottom surface.

FIG. 6 is a diagram illustrating an SRM driving semiconductor module according to another embodiment of the present invention and includes a circuit for driving a two-phase SRM.

The two-phase SRM driving module 600 according to the present invention includes a U-phase high voltage integrated circuit 610U and a first switching element 621 for driving the U-phase of the two-phase SRM, and the V-phase of the SRM. The high voltage side driver including a V phase high voltage integrated circuit 610V and a second switching device 622, and a low voltage integrated circuit 610L and third and fourth switching devices 623 to drive the U and V phases. And a low pressure side driver including 624.

The U-phase high voltage integrated circuit 610U has a floating voltage terminal VB for receiving the high voltage floating voltage V _{B (U)} from the outside and a supply voltage for receiving the supply voltage V _{cc (U)} from the outside. Terminal VCC, common ground terminal COM to receive common ground signal COM from the outside, input terminal IN to receive U phase driving input signal IN _{( UH )} from the outside, and U phase output terminal. The output terminal OUT for outputting the high voltage side output signal by the U-phase driving input signal IN _{( UH )} input through the floating return voltage terminal VS connected to the (U) and the input terminal IN. Have The signal output from the output terminal OUT of the U-phase high voltage integrated circuit 610U is input to the gate of the first switching element 621 to turn on or turn off the first switching element 621.

The V-phase high voltage integrated circuit 610V has a floating voltage terminal VB for receiving the high voltage floating voltage V _{B (V)} from the outside and a supply voltage terminal for receiving the supply voltage V _{cc (V)} . VCC), floating terminal connected to common terminal (COM) receiving common ground signal (COM), input terminal (IN) receiving V phase driving input signal (IN _{( VH )} ), and V phase output terminal (V) It has an output terminal OUT for outputting the high voltage side output signal by the V-phase driving input signal IN _{( VH )} input through the return voltage terminal VS and the input terminal IN. The signal output from the output terminal OUT of the V-phase high voltage integrated circuit 610V is input to the gate of the second switching element 622 to turn on or off the second switching element 622.

The power terminal P for driving the motor is connected to the collector of the first switching element 621 of the high voltage side driving unit, and the output terminal OUT of the U-phase high voltage integrated circuit 610U is connected to the gate, and to the emitter. U phase output terminal (U +, V _{S (U)} ) of module is connected.

The power terminal P for driving the motor is connected to the collector of the second switching element 621, the output terminal OUT of the V-phase high voltage integrated circuit 610V is connected to the gate, and the V phase of the module is connected to the emitter. Output terminals (V +, V _{S (V)} ) are connected.

The low voltage integrated circuit 610L of the low voltage side driver includes a short circuit current terminal CSC to which a short circuit protection signal is input, a fault out duration terminal CFOD to which a signal for determining a fault-out time is input, and a fault-out to the outside. Fault-out terminal (VFO) for outputting out signal (V _FO ) or receiving fault-out signal (V _FO ) from outside, input terminal for receiving U-phase and V-phase input signals on low voltage side (IN ( UL), IN (VL)) , a common ground terminal for receiving a common reference signal (COM) from the external (COM), the supply voltage (supply voltage terminal (VCC) for receiving a V _{cc (L)),} and the low pressure And output terminals OUT (UL) and OUT (VL) used to output the U-phase and V-phase output signals for driving the switching element on the side. Output signals output from the output terminals OUT (UL, OUT (VL) of the low voltage integrated circuit 610L are respectively input to gates of the third and fourth switching elements 623 and 624 to turn the switching elements. Turn on or turn off.

The fault-out (VFO) terminal, as in the case of the previous embodiment, when the inside is the fault (fault) detected for example, when the over-current is detected, or the supply voltage (V _cc) input low, an device from being destroyed To prevent this, a fault-out signal (V _FO ) is output and the module 600 is shut down. Alternatively, the fault-out signal V _FO may be input through the fault-out terminal VFO to externally shut down the module 600.

The U phase output terminal (U-) of the module is connected to the collector of the third switching element 623 on the low voltage side, and the U phase output terminal (OUT (UL)) of the low voltage integrated circuit 610L is connected to the gate. The emitter is connected to the negative power supply terminal (N).

The V-phase output terminal V- of the module is connected to the collector of the fourth switching element 624, and the V-phase output terminal OUT (VL) of the low-voltage integrated circuit 610L is connected to the collector. Is connected to the negative power supply terminal (N).

Then, four diodes are arranged to reflux the current when the switching elements are turned off. One end of the first diode 631 is connected between the emitter of the first switching element 621 and the U-phase output terminal U + of the module, and the other end of the first diode 631 is connected to the emitter of the fourth switching element 624. It is connected between (-) power supply terminal (N). One end of the second diode 632 is connected between the collector of the first switching element 621 and the power supply terminal P, and the other end of the second diode 632 is connected to the collector of the third switching element 623 and the U-phase output terminal of the module. Connected between (U-). One end of the third diode 633 is connected between the emitter of the second switching device 622 and the V-phase output terminal V + of the module, and the other end of the third diode 633 is connected to the emitter of the fourth switching device 624. It is connected between (-) power terminal (N) of module. One end of the fourth diode 634 is connected between the collector of the first switching device 621, the collector of the second switching device 632, and the power supply terminal P, and the other end of the fourth switching device 634. ) Is connected to the collector of) and the V output terminal (V-) of the module.

In addition, in the two-phase SRM driving semiconductor module 600 of the present invention, for example, an NTC thermistor 640 is integrated to sense the internal temperature of the module and protect the internal circuit. The thermistor 640 detects a temperature inside the module 500 and indicates a change in resistance value according to a temperature change inside the module. That is, when the temperature of the module changes, the electrical resistance of the thermistor 640 changes, and the change in the resistance value of the thermistor 640 can be read using an external resistor connected to the R _TH terminal of the module, so that the temperature inside the module Changes can be easily detected.

Meanwhile, in the two-phase SRM driving semiconductor module 600 of the present invention, first and second bootstrap diodes 651 and 652 for configuring a bootstrap circuit may be integrated. The first bootstrap diode 651 constitutes a bootstrap power circuit of the U-phase high voltage integrated circuit 610U, and the second bootstrap diode 652 constitutes a bootstrap power circuit of the V-phase high voltage integrated circuit 610V. do. The anodes of the first and second bootstrap diodes 651 and 652 are common to the supply voltage terminals V _CC of the module and to the voltage input terminals VCC of the U and V phase high voltage integrated circuits 610U and 610V. Is connected. The cathode of the first bootstrap diode 651 is commonly used for the floating voltage terminal VB of the U phase high voltage integrated circuit 610U and the U phase high voltage side floating voltage terminal V _{B (U)} of the module 600. Connected. The cathode of the second bootstrap diode 652 is commonly connected to the floating voltage terminal VB of the V phase high voltage integrated circuit 610V and the V phase floating voltage terminal V _{B (V)} of the module 600. .

As such, since the bootstrap diode is integrated in the module, there are various advantages such as a reduction in the volume of the device and a reduction in manufacturing cost as compared to the case where the bootstrap circuit is separately provided.

The low voltage lockout function and the overcurrent lockout function are also incorporated in the module of this embodiment as in the previous embodiment.

7 is a view illustrating an application of a two-phase SRM driving semiconductor module according to an embodiment of the present invention. The same reference numerals as in FIG. 6 denote the same elements.

In order to drive the two-phase SRM, the U-phase output terminals U + and U- and the V-phase output terminals V + and V- of the semiconductor module 600 are connected to the two-phase SRM 700. A power supply 710 for supplying a voltage to the semiconductor module 600 is disposed between the power supply terminal P and the current detection terminal N of the semiconductor module 600, and the DC link capacitor is connected in parallel with the power supply 710. 711 is disposed. A shunt resistor R _S for detecting a current of the module is connected between the negative power terminal N and the power source 710.

The stability of the bootstrap power supplied to the first high voltage integrated circuit 610U between the U phase output terminals U + and V _{S (U) on the} high voltage side and the floating voltage terminal V _{B (U)} on the U phase high voltage side. The capacitor 720 is disposed for supplying and is supplied to the second high voltage integrated circuit 610V between the V phase output terminals V + and V _{S (V} ) and the V phase high voltage side floating voltage terminal V _{B (V)} . The capacitor 730 is disposed to stabilize the bootstrap power.

The power supply terminal V _CC of the semiconductor module 600 may be configured to supply 15V to supply operating power to devices (not shown) in the first and second high voltage integrated circuits 610U and 610V and the low voltage integrated circuit 610L. Power is supplied, and capacitors 740 and 741 for power stabilization are disposed between the power supply terminal V _CC and the common ground terminal COM.

U-phase high voltage input signal terminal (IN _{( UH )} ) and U-phase low voltage input signal terminal (IN _{( UL )} ), V-phase high voltage input signal terminal (IN _{( VH )} ) and V-phase of semiconductor module 600. The low voltage side input signal terminal IN _{(VL) is} connected to a microprocessor (CPU) 800 to connect the first and second high voltage integrated circuits 610U and 610V in the module 600 from the microprocessor (CPU) 800. And an input signal for operating the low voltage integrated circuit 610L. In this process, a filter 750 is disposed between the microprocessor (CPU) 800 and the module 600 in which resistors and capacitors are disposed in parallel.

The fault out terminal V _FO of the semiconductor module 600 is also connected to the microprocessor 800. The fault out terminal (V _FO ) of the module 600 is a bidirectional terminal, which also transmits fault out information from the module 600 to the microprocessor (CPU) 800, and also the microprocessor (CPU) 800. It also accepts a fault out command from the system. The current output to the current detecting terminal N of the semiconductor module 600 is input to the short-circuit current terminal C _SC of the module 600 through a filter consisting of a resistor R _f and a capacitor C _SC .

Since the two-phase SRM driving device configured as described above operates on the same principle as the single-phase SRM driving device described above, a description thereof will be omitted.

8 is a view showing a bottom perspective view and a top perspective view of a semiconductor module package for driving a two-phase SRM of the present invention.

As shown, the semiconductor module package of the present invention has a single inline package (SIP) structure in which pins 820 for signal transmission to the outside of the module are disposed on only one side of the molding material 810. have. The package has a structure in which a device such as a high voltage integrated circuit is disposed on an insulated metal substrate (IMS) and surrounds the side and top surfaces of the insulated metal substrate with a molding material 810. The insulating metal substrate has a structure in which a metal plate, an insulating plate, and a conductive pattern are sequentially arranged. The bottom surface of the insulating metal substrate is exposed to the molding material 810 outside, the heat inside the semiconductor module package can be easily released to the outside by the exposed bottom surface 830.

Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. Do.

As described so far, according to the semiconductor module for driving a switched reluctance motor according to the present invention, since the driving circuit for driving the switched reluctance motor is integrated and modularized in one semiconductor chip, it is easy to use, compact, and manufactured. The advantage of reducing the unit price is provided. In addition, since it is designed and manufactured in consideration of the characteristics of each device, high efficiency and high reliability SRM driving is possible.

In addition, the semiconductor module has a built-in over-current and low-voltage protection function, and the thermistor for monitoring the temperature of the module is built-in can further increase the reliability of the device.

Claims (14)

In a driving circuit for driving a single-phase switched reluctance motor (SRM), A first switching element for flowing a driving current to one input terminal of the switched reluctance motor; A high voltage integrated circuit controlling a switching operation of the first switching device; A second switching element for extracting a driving current from the other input terminal of the switched reluctance motor; A low voltage integrated circuit controlling a switching operation of the second switching element; And A semiconductor module for driving a switched reluctance motor, characterized in that the first and second diodes for refluxing current when the first and second switching elements are turned off are integrated in one semiconductor package. The method of claim 1, wherein the low voltage integrated circuit, Switched reluctance, characterized in that it comprises a fault-out terminal for outputting a fault-out signal to the outside or receiving a fault-out signal from the outside when a fault such as overcurrent or undervoltage is detected in the module Semiconductor module for motor drive. The method of claim 1, wherein in the module: The semiconductor module for driving a switched reluctance motor, characterized in that it further comprises a thermistor whose electrical resistance changes as the temperature inside the module changes. The method of claim 1, And the first and second switching devices are an insulated gate bipolar transistor (IGBT) or a power MOSFET (MOSFET). The method of claim 1, The semiconductor module is a semiconductor module for driving a switched reluctance motor, characterized in that the terminal for input and output of each signal has a dual in-line package (DIP) structure provided on both sides of the package. The method of claim 1, And the high voltage integrated circuit, the low voltage integrated circuit, and the first and second switching devices are disposed on a direct bonded copper (DBC) substrate. In a drive circuit for driving a two-phase switched reluctance motor (SRM), First and second switching elements for flowing a driving current to first and second input terminals of the switched reluctance motor; A first high voltage integrated circuit controlling a switching operation of the first switching device; A second high voltage integrated circuit controlling a switching operation of the second switching device; A third fourth switching element for extracting a driving current from third and fourth input terminals of the switched reluctance motor; A low voltage integrated circuit controlling a switching operation of the third and fourth switching devices; And A semiconductor module for driving a switched reluctance motor, characterized in that the first to fourth diodes for recirculating current when the first to fourth switching elements are turned off are integrated in one semiconductor package. The method of claim 7, wherein the low voltage integrated circuit, Switched reluctance, characterized in that it comprises a fault-out terminal for outputting a fault-out signal to the outside or receiving a fault-out signal from the outside when a fault such as overcurrent or undervoltage is detected in the module Semiconductor module for motor drive. The method of claim 7, wherein in the module, The semiconductor module for driving a switched reluctance motor, characterized in that it further comprises a thermistor whose electrical resistance changes as the temperature inside the module changes. The method of claim 7, wherein And the first and second switching devices are an insulated gate bipolar transistor (IGBT) or a power MOSFET (MOSFET). The method of claim 7, wherein And a first and second bootstrap diodes arranged to be connected to each other to apply a bootstrap voltage to the first high voltage integrated circuit and the second high voltage integrated circuit. The method of claim 11, Each anode of the first and second bootstrap diodes is commonly connected to each voltage input terminal of the first and second high voltage integrated circuits. And each cathode of the first and second bootstrap diodes is connected to each floating voltage terminal of the first and second high voltage integrated circuits. The method of claim 7, wherein The module is a semiconductor module for driving a switched reluctance motor, characterized in that the terminal for input and output of each signal is arranged in a single in-line package (SIP) structure is provided to one side of the package. The method of claim 7, wherein And the first and second high voltage integrated circuits, the low voltage integrated circuits, and the first to fourth switching elements are disposed on an insulating metal substrate (IMS) substrate.

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