KR20150039155A - Three-phase inverter package - Google Patents

Abstract

A three-phase inverter package includes: a first substrate with the top surface on which an electrical element is installed; a second substrate having height different from that of the first substrate, separated from the first substrate, installed independently from the first substrate, and having the top surface on which a control circuit component is installed; multiple first outer leads arranged on one lateral surface of the first substrate; multiple second outer leads arranged on one lateral surface of the second substrate; and molding materials arranged on the first and second substrates to cover the first and second substrates and expose the first and second outer leads. The thickness of each first outer lead is thinner than that of the first substrate, and the thickness of each second outer lead is thinner than that of the second substrate.

Description

A three-phase inverter package

The present application relates to a power package, and more particularly to a three-phase inverter package.

In a power electronics such as a motor control circuit for driving a motor in general, a power semiconductor such as an Insulated Gate Bipolar Transistor (hereinafter referred to as " IGBT ") is used in a region where a rated voltage is 300 V or more as a switching element. Devices are mainly used. In addition, power semiconductor devices such as IGBTs and diodes are often mounted in a package and used as a power module in power conversion devices and the like in many cases. In particular, in order to meet the recent trend of shifting to the light and short life of electronic products, development and research focus is focused on light weight and high integration, and modularized power devices are developed and marketed.

What is important in such a modularized power device is to reduce the volume while incorporating as many functions as possible in one module and to effectively dissipate the heat generated by the device to prevent malfunction or destruction of the device.

A problem to be solved by the present application is to provide a three-phase inverter package having a three-phase inverter circuit with good thermal efficiency and improved operational characteristics.

The three-phase inverter package according to an exemplary embodiment includes first and second switching elements for generating a U-phase output signal to a three-phase load, third and fourth switching elements for generating a V- A first high voltage integrated circuit for controlling a switching operation of said first switching element; and a second high voltage integrated circuit for controlling said switching operation of said first switching element, A second high voltage integrated circuit for controlling the switching operation of the third switching element, a third high voltage integrated circuit for controlling the switching operation of the fifth switching element, and a second high voltage integrated circuit for switching operations of the second, A current detection terminal connected to one side terminal of each of the fourth to sixth switching elements for detecting an output current flowing in the switching element, (DBC) substrate on which a power semiconductor device is mounted, a control substrate having a different height from the divisible substrate, the control substrate being provided independently from the divisible substrate and having the control circuit component mounted thereon, A plurality of first outer leads arranged to be connected to one side of the seed substrate, a plurality of second outer leads arranged to be connected to one side of the control substrate, and a plurality of second outer leads And a molding material arranged on the divisible substrate and the control substrate to expose the first and second outer leads of the first outer lead, wherein the thickness of each of the first outer leads is smaller than the thickness of the divisible substrate, 2 The thickness of each of the outer leads is smaller than the thickness of the control board.

The three-phase inverter package according to an exemplary embodiment includes first and second switching elements for generating a U-phase output signal to a three-phase load, third and fourth switching elements for generating a V- A first high voltage integrated circuit for controlling a switching operation of said first switching element; and a second high voltage integrated circuit for controlling said switching operation of said first switching element, A second high voltage integrated circuit for controlling the switching operation of the third switching element, a third high voltage integrated circuit for controlling the switching operation of the fifth switching element, and a second high voltage integrated circuit for switching operations of the second, A current detection terminal connected to one side terminal of each of the fourth to sixth switching elements for detecting an output current flowing to the switching element, A control board having a different height from the ceramic substrate and provided independently of the ceramic substrate and having the control circuit components mounted thereon; and a control board connected to one side of the ceramic substrate, A plurality of second external leads arranged to be connected to one side of the control board, and a plurality of second external leads arranged to cover the ceramic board and the control board while contriving the bottom surface of the ceramic board And a molding material arranged on the ceramic substrate and the control substrate to expose the plurality of first and second outer leads, wherein a thickness of each of the first outer leads is smaller than a thickness of the ceramic substrate, 2 The thickness of each of the outer leads is smaller than the thickness of the control board.

In one example, the first high voltage integrated circuit, the second high voltage integrated circuit, and the third high voltage integrated circuit may further include first, second, and third bootstrap diodes, respectively, arranged to apply a bootstrap voltage to the first high voltage integrated circuit, have.

In one example, each anode of the first, second, and third bootstrap diodes is commonly connected to a voltage input terminal of each of the first, second, and third high voltage integrated circuits, Second, and third bootstrap diodes may be coupled to respective high voltage side floating voltage terminals of the first, second, and third high voltage integrated circuits.

In one example, the first to sixth switching elements may be power MOSFETs.

In one example, the first to sixth switching elements are insulated gate bipolar transistors (IGBTs) and may further include a free wheeling diode having both ends connected to the emitter and collector of the insulated gate bipolar transistor. have.

In one example, a dual inline package (DIP) structure may be provided in which the plurality of first and second outer leads are arranged on opposite sides of the package, respectively.

In one example, some of the plurality of first outer leads may be disposed in at least one groove formed on both sides of the package so that the first outer leads are arranged in a zigzag pattern.

According to an exemplary embodiment of the present invention, there is provided a three-phase inverter package comprising: a first substrate on which a power smoothing capacitor is installed; a first substrate having a different height from the first substrate and being independent from the first substrate, A plurality of first outer leads arranged to be connected to one side of the first substrate and a plurality of second outer leads arranged to be connected to one side of the second substrate; And a molding material arranged on the first substrate and the second substrate to cover the first substrate and the second substrate and expose the plurality of first and second outer leads, The thickness of each of the second outer leads is smaller than the thickness of the first substrate, and the thickness of each of the second outer leads is smaller than the thickness of the second substrate.

According to the three-phase inverter package according to this example, there are several advantages as follows. First, the low-voltage lockout and overcurrent protection functions are integrated in the integrated circuit, which can effectively prevent damage or destruction of the device under low voltage and overcurrent conditions. Second, the built-in soft-switching function prevents excessive overshoot by hard-switching. Third, terminals for current detection are opened to the outside of the package, so that current detection can be facilitated. Fourth, since the bootstrap diodes are integrated in the module, there are various advantages such that the volume of the device can be reduced and the manufacturing cost can be reduced, compared with the case where the bootstrap circuit is separately provided. Fifth, since the grooves are formed on the sides of the package and the fins are arranged to form a zig-zag shape, it is possible to secure the insulation distance between the pins while reducing the distance between the pins, .

FIG. 1 is a view for explaining a power device and a control circuit component included in a three-phase inverter package according to an example.
2 is a timing diagram showing the low voltage lockout function of the control circuit component of FIG.
3 is an external view showing a pin arrangement of a three-phase inverter package according to an example.
4 is a cross-sectional view of a three-phase inverter package according to an example.
5 is a cross-sectional view of a three-phase inverter package according to another example.

FIG. 1 is a view for explaining a power device and a control circuit component included in a three-phase inverter package according to an example. Referring to FIG. 1, the power device and control circuit component 100 according to an exemplary embodiment includes a high voltage side driver and a low voltage side driver. The high voltage side driver comprises three high voltage integrated circuits (HVIC) and switching elements connected to each high voltage integrated circuit, and the low voltage side driver comprises one low voltage integrated circuit (LVIC) and three switching elements connected thereto. The switching elements constitute a power device, and a high voltage integrated circuit (HVIC) and a low voltage integrated circuit (LVIC) constitute a control circuit component. In one example, the power devices and control circuit components can be integrated into one integrated circuit. In another example, the power device and control circuit components may each be comprised of separate integrated circuits. In one example, the power harvester may have a three-phase inverter circuit integrated therein.

The high voltage side drive unit includes a U-phase high voltage integrated circuit 110U and a switching device 120U for driving the U phase of a three-phase load having, for example, U-phase, V-phase and W- Phase high voltage integrated circuit 110V and a switching device 120V for driving the W phase and a W phase high voltage integrated circuit 110W and a switching device 120W for driving the W phase.

The U-phase, V-phase and W-phase switching elements 120U, 120V and 120W of the high-voltage side driving part may be constituted by an insulated gate bipolar transistor (IGBT) as shown in the figure. In some cases, it may be composed of other power type transistors such as a power type nMOSFET.

The U-phase high voltage integrated circuit 110U of the high voltage side drive unit includes a high voltage side floating voltage terminal VB, a supply voltage terminal VCC, a common ground terminal COM, an input terminal IN, an output terminal OUT, And a high voltage side floating return voltage terminal (VS).

The high voltage side floating voltage terminal VB is used to receive the high voltage side floating voltage V _{B (U)} from the outside. Supply voltage terminal (VCC) is used for receiving a supply voltage _{(V cc (V))} from the outside. The common ground terminal (COM) is used to receive a common ground signal (COM) from the outside. The input terminal IN is used to receive the U-phase driving input signal IN _(UH) from the outside.

The high voltage side floating return voltage terminal (VS) is connected to the U phase output terminal (U) and is used to detect the U phase output current. The output terminal OUT is used for outputting the high-voltage side output signal by the U-phase drive input signal IN _(UH) input through the input terminal IN. The signal output from the output terminal OUT of the U-phase high voltage integrated circuit 110U is input to the gate of the U-phase switching device 120U to turn on the U-phase switching device 120U or turn- Turn-off.

The V-phase high-voltage integrated circuit 110V of the high-voltage side driving section includes a high voltage side floating voltage terminal VB, a supply voltage terminal VCC, a common ground terminal COM, an input terminal IN, an output terminal OUT, And a high voltage side floating return voltage terminal (VS).

The high voltage side floating voltage terminal VB is used to receive the high voltage side floating voltage V _{B (V)} from the outside and the supply voltage terminal VCC receives the supply voltage V _{cc (V)} Is used. The common ground terminal COM is used to receive the common ground signal COM from the outside and the input terminal IN is used to receive the V phase driving input signal IN _{( VH )} from the outside.

The high-voltage-side floating return voltage terminal VS is connected to the V-phase output terminal V and used to detect the V-phase output current. The output terminal OUT is used for outputting the high-voltage side output signal by the V-phase driving input signal IN _{( VH )} inputted through the input terminal IN. The signal output from the output terminal OUT of the V-phase high voltage integrated circuit 110V is input to the gate of the V-phase switching device 120V to turn on or turn-off the V- Turn-off.

The W-phase high voltage integrated circuit 110W of the high voltage side drive section is connected to the high voltage side floating voltage terminal VB, the supply voltage terminal VCC, the common ground terminal COM, the input terminal IN, W side high voltage side floating return voltage terminal (VS).

The high voltage side floating voltage terminal VB is used to receive the high voltage side floating voltage V _{B (W)} from the outside and the supply voltage terminal VCC receives the supply voltage V _{cc (W)} from the outside Is used. The common ground terminal COM is used to receive the common ground signal COM from the outside and the input terminal IN is used to receive the W phase driving input signal IN _{( WH )} from the outside.

The high voltage side floating return voltage terminal VS is connected to the W phase output terminal W and is used to detect the W phase output current. The output terminal OUT is used to output the high-voltage side output signal by the W-phase drive input signal IN _{( WH )} input through the input terminal IN. The signal output from the output terminal OUT of the W-phase high voltage integrated circuit 110W is input to the gate of the W-phase switching device 120W to turn-on or turn-off the W-phase switching device 120W. Turn-off.

The power supply terminal P for driving the motor is connected to the collector of the U phase switching device 120U of the high voltage side driving part and the output terminal OUT of the U phase high voltage integrated circuit 110U is connected to the gate, U phase output terminal (U) is connected. A free wheeling diode 130U is connected anti-parallel between the collector and the emitter of the U-phase switching device 120U.

The power terminal P for driving the motor is connected to the collector of the V-phase switching element 120V of the high-voltage side driving part, the output terminal OUT of the V-phase high voltage integrated circuit 110V is connected to the gate, V-phase output terminal (V) is connected. A free wheeling diode 130V is connected in anti-parallel between the collector and the emitter of the V-phase switching device 120V.

Similarly, a power supply terminal P for driving the motor is connected to the collector of the W-phase switching element 120W of the high-voltage side driving part, an output terminal OUT of the W-phase high-voltage integrated circuit 110W is connected to the gate thereof, And a W phase output terminal W is connected to the output terminal. The free wheeling diode 130W is also connected in anti-parallel between the collector and the emitter of the W-phase switching device 120U.

In the inverter circuit, a freewheeling diode is required because the load motor is inductive. When the current flowing through the load is cut off and the energy stored in the L of the motor is instantaneously released, large power is generated to such an extent that it is sufficient to lose the characteristic of the IGBT. If the current flowing through the motor is abruptly cut off by the switching operation of the IGBT, the characteristics of the IGBT significantly deteriorate due to the energy released. Therefore, the current flowing in the motor while the IGBT is turned off is circulated by the free wheeling diode so that the current flowing through the motor itself is not changed by switching.

When the IGBT that is connected to the DC power source and the motor is turned off, the current flowing through the motor reversely flows the DC current through the free wheeling diode by the energy stored in the L of the motor, It becomes equivalent to a state in which a counter electromotive force is applied to the motor. If the ratio between the turn-on operation time and the turn-off operation time of the IGBT is changed, the ratio of the DC voltage application period to the back-flow period changes, so that it becomes possible to control the voltage applied to the motor on average. Therefore, when the ratio is changed to a sinusoidal wave form, the AC current can be supplied from the DC power source by the switching without rapidly breaking the current of the motor by the switching of the IGBT.

On the other hand, the low-voltage side driving section is constituted by the low-voltage integrated circuit 110L and U-phase, V-phase and W-phase switching elements 121U, 121V and 121W. The U-phase, V-phase and W-phase switching elements 121U, 121V and 121W of the low-voltage side driving part may also be composed of insulation gate type bipolar transistors (IGBTs) And may be composed of other power type transistors as well.

The low voltage integrated circuit 110L of the low voltage side driving part includes a shortcircuit current terminal CSC, a fault-out duration terminal CFOD, a fault-out terminal VFO, input terminals IN (UL), IN (VL) A common ground terminal COM, a supply voltage terminal VCC and output terminals OUT (UL), OUT (VL), and OUT (WL).

A shunt resistor for detecting a short-circuit current is connected to the short-circuit current terminal CSC. The other end of the shunt resistor is connected to the common ground terminal (COM) of the low voltage integrated circuit. A capacitor for determining the length of the fault-out pulse is connected to the fault-out duration terminal CFOD. The length of the fault-out pulse is determined by the capacitance of the capacitor.

The fault-out terminal VFO of the low-voltage integrated circuit 110L is used to output the fault-out signal V _FO to the outside or receive the fault-out signal V _FO from the outside. Specifically, when the inside is the fault (fault) detected, for example, when the over-current is detected, or the supply voltage (V _cc) input low, the device is a fault in order to prevent destruction-outputs the out signals (V _FO) , The inverter module 100 is shut down. Alternatively, a fault-out signal V _FO may be input through the fault-out terminal VFO to shut down the power-supply device and control circuit part 100 arbitrarily from the outside.

V phase and W phase input signals on the low voltage side of the input terminals IN (UL), IN (VL) and IN (WL) of the low voltage integrated circuit 110L. The common ground terminal COM is used to receive the common ground signal COM from the outside, and the supply voltage terminal VCC is used to receive the supply voltage. The output terminals OUT (UL), OUT (VL), and OUT (WL) are used to output output signals for driving the low-side switching elements, respectively. The output signals output from the output terminals OUT (UL), OUT (VL), and OUT (WL) of the low voltage integrated circuit are input to the gates of the U phase, V phase, and W phase switching elements 121U, 121V, V-phase, and W-phase switching elements 121U, 121V, 121W.

The collector of the low voltage side U phase switching device 121U is connected to the emitter of the high voltage side U phase switching device 120U while the collector of the low voltage side V phase switching device 121V is connected to the emitter of the high voltage side V phase switching device 120V , And the collector of the low-side W-phase switching device 121W is connected to the emitter of the high-side W-phase switching device 120W. That is, the high voltage side and low voltage side switching elements of each phase are controlled by different integrated circuits.

The free wheeling diodes 131U, 131V and 131W are also connected in anti-parallel between the collector and the emitter of the U-phase, V-phase and W-phase switching elements on the low-voltage side.

In one example, the high voltage integrated circuits 110U, 110V and 110W and the low voltage integrated circuit 110L may have a low voltage lock out function for preventing the switching elements from operating under insufficient driving voltage. The driving voltage for controlling and driving the switching elements is supplied from a 15 V DC power supply connected between the supply voltage terminal (VCC) of the module and the common ground terminal (COM). For stable operation, this voltage is regulated to 15V ± 10%. The switching elements 120U, 120V and 120W connected to the high voltage integrated circuits 110U, 110V and 110W and the low voltage integrated circuit 110L connected to the high voltage integrated circuits 110U, 110V and 110W, when the driving voltages VCC and VBS drop to a level lower than a predetermined low voltage lockout level, The switching elements 121U, 121V and 121W connected to the switching element 121 are turned off regardless of the input pulse signal so that no current flows.

Fig. 2 is a timing chart showing a low-voltage lock-out function of the control circuit component of Fig. 1, in which (A) shows an input pulse signal, (B) shows a lockout signal, Output current of the switching element, and (E) a fault-out signal, respectively.

First, when the supply voltage C is inputted and becomes equal to or higher than the reference voltage (a1), the lock-out signal B is reset and the fault-out signal E rises. When the next input pulse signal A is input while the lock-out signal B is reset, the switching elements connected to the low-voltage integrated circuit are turned on to output a current (a2) A). When the supply voltage falls below the reference level (a3), the lock-out signal b is set. When the fault-out signal E falls, the switching element is turned off (a4) When the voltage becomes equal to or higher than the reference voltage, the current is prevented from flowing by maintaining the turn-off state until (a6).

A filter may be embedded in the high voltage integrated circuit and the low voltage integrated circuit in order to remove the noise in this abnormal operation state. Voltage lock-out function in the same manner also in the case of a high-voltage integrated circuit, and a description thereof will be omitted.

In addition, the low-voltage integrated circuit 110L has a function of protecting elements in the module when a short circuit is formed. That is, the low-voltage integrated circuit 110L monitors a voltage input to the short-circuit current terminal CSC and generates a fault-out signal when the voltage exceeds the predetermined reference voltage V _{SC (ref)} And turns off the low voltage side switching elements 121U, 121V and 121W.

In addition, the low-voltage integrated circuit 110L has a soft-switching function. When the switching device connected to the low-voltage integrated circuit 110L, that is, the IGBT, is hard off, it generates a large overshoot voltage of about 100 V, which has a serious effect on the device. The hard-off occurs mainly when a short-circuit is formed. When a short-circuit is formed, a fault-out signal is transmitted to the microcomputer (not shown) through the fault-out terminal VF0. In order to protect the module, the microcomputer issues a command to turn off the switching element to shut down the module. At this time, the protection circuit built in the low voltage integrated circuit 110L is activated to perform soft-switching so that the switching element is slowly turned off. When soft-off is performed in this way, the overshoot voltage is about 30 to 50V.

In this way, when the driving voltage is lower than a certain level, or when an excessive current flows due to the formation of a short circuit, the switching elements are turned off, thereby preventing damage or destruction of the device due to abnormal operation. In addition, by allowing the soft-switching operation to be performed, it is possible to prevent the device from being damaged due to excessive overshoot voltage.

The U phase output terminal U is connected to the collector of the U phase switching device 121U of the low voltage side driving part and the U phase output terminal OUT (UL) of the low voltage integrated circuit 110L is connected to the gate, Phase current detection terminal N _U used for detecting the current of the U phase output signal.

The V-phase output terminal V is connected to the collector of the V-phase switching element 121V of the low-voltage side driving unit, the V-phase output terminal OUT (VL) of the low-voltage integrated circuit 110L is connected to the gate, A V-phase current detection terminal (N _V ) used for detecting the current of the V-phase output signal is connected to the emitter.

Similarly, the W phase output terminal W is connected to the collector of the W phase switching element 121W of the low voltage side driving part, the W phase output terminal OUT (WL) of the low voltage integrated circuit 110L is connected to the gate, The W-phase current detection terminal (N _W ) used for detecting the current of the W phase output signal is connected to the emitter.

Since the terminals for current detection are provided for each phase in this manner, it is possible to easily detect the U-phase, V-phase, and W-phase currents. Accordingly, when a short circuit is formed and an overcurrent is generated, it is possible to detect the overcurrent easily and effectively prevent the device from being broken. In addition, since it is not necessary to separately configure an apparatus for detecting an overcurrent outside the module, manufacturing cost can be reduced.

Second and third bootstrap diodes 140U, 140V and 140W for constituting a bootstrap circuit in one example. The first bootstrap diode 140U constitutes the bootstrap power supply circuit of the U-phase high voltage integrated circuit 110U and the second bootstrap diode 140V constitutes the bootstrap power circuit of the V-phase high voltage integrated circuit 110V And the third bootstrap diode 140W constitutes a bootstrap power supply circuit of the W-phase high voltage integrated circuit 110W.

The first, second and third bootstrap diode (140U, 140V, 140W) of the anode and the supply voltage terminal (V _CC) of a high voltage integrated circuit, U-phase, V-phase and W-phase high-voltage integrated circuit (110U, 110V, And 110W, respectively. The cathode of the first bootstrap diode 140U is common to the floating voltage terminal VB of the U-phase high voltage integrated circuit 110U and the U-phase high voltage side floating voltage terminal V _{B (U)} of the inverter module 100 Lt; / RTI > The cathode of the second bootstrap diode 140V is commonly connected to the floating voltage terminal VB of the V-phase high voltage integrated circuit 110V and the V-phase floating voltage terminal V _{B (V)} of the inverter module 100 do. The cathode of the third bootstrap diode 140W is commonly connected to the floating voltage terminal VB of the W-phase high voltage integrated circuit 110W and the W-phase floating voltage terminal V _{B (W)} of the inverter module 100 .

When the bootstrap diode is integrated in the power device, there are various advantages such that the volume of the device can be reduced and the manufacturing cost can be reduced, compared with the case where the bootstrap circuit is separately provided.

Fig. 3 is an external view showing a pin arrangement of the three-phase inverter package according to an example. The names of the pins correspond to the names of the terminals shown in Fig. 3, the supply voltage terminal V _CC , the common ground terminal COM, the input terminals IN _(UL) and IN _{( VL )} for the low-voltage side are connected to the left side of the three- , IN _(WL)), out fault-terminal (V _FO), a fault-out duration terminal (C _FOD) and the short circuit current terminals (C _SC) are arranged in turn. Subsequently, the input terminal IN _(UH) , the voltage supply terminal V _{CC (UH} ), the floating voltage terminal V _{B (U} ), the floating return voltage terminal V _{s (U ))} are arranged in turn, high-voltage-side input terminal of the phase V of the driving unit (iN _(VH)), a voltage supply terminal (V _{CC (VH)),} the floating voltage terminal (V _{B (V)),} a floating return voltage terminal _{(V S (V))} input terminal of the phase W in is disposed, high-side driver _{(iN (WH)),} a voltage supply terminal _{(V CC (WH)),} the floating voltage terminal _{(V B (W)),} And a floating return voltage terminal V _{S (W)} .

The U phase current detection terminal N _U , the V phase current detection terminal N _V , the W phase current detection terminal N _W and the U phase output signal terminal U ), A V-phase output signal terminal (V), a W-phase output signal terminal (W), and a motor drive power source terminal (P) are arranged in this order. In one example, the three-phase inverter package 200 may be a dual inline package (DIP) structure in which the pins 220 are disposed on both sides of the package. A groove 230 is formed in a part of the package, and some pins are disposed in the groove to form a zig-zag shape. In this case, compared with the case where the groove 230 is not provided, the distance between the pins can be reduced, and the insulation distance between the pins can be secured, thereby reducing the size of the package.

4 is a cross-sectional view of a three-phase inverter package according to an example. 4, a three-phase inverter package 300 according to the present embodiment includes a power device 320 disposed on a ceramic substrate 310 and a control circuit component 340 . The control board 330 is installed to have a height different from that of the ceramic board 310. The remaining space is filled with a molding material 350 such as an epoxy molding compound (EMC), and a plurality of outer leads 371 and 372 are disposed on both sides of the molding material 350. The first outer lead 371 is directly connected to the ceramic substrate 310. Some are located within the molding material 350 and some are exposed outside the molding material 350. The thickness of the first outer lead 371 is smaller than the thickness of the ceramic substrate 310 and specifically the thickness of the portion 311 of the ceramic substrate 310 that is in contact with the first outer lead 371. The second outer lead 372 is directly connected to the control board 330. Some are located within the molding material 350 and some are exposed outside the molding material 350. The thickness of the second outer lead 372 is smaller than the thickness of the control board 330. The molding material 350 exposes the bottom surface of the ceramic substrate 310, the first outer lead 371, and the second outer lead 372. 3, a part of the plurality of first outer leads 371 is disposed in at least one hole formed on both sides of the package so that the first outer leads 371 are arranged in a zigzag shape . The power device 320 may be a switching device 321, such as, for example, an IGBT or MOSFET, and a freewheeling diode 322, and the control circuitry 340 may be, for example, a high voltage or low voltage integrated Can be a circuit. The lead frame 330 on which the control circuit component 340 is mounted and the power device 320 are connected to each other by an aluminum wire 360 having good conductivity. In this embodiment, as the bottom surface of the ceramic substrate 310 is exposed to the outside, heat generated in the device can be effectively discharged to the outside of the package.

5 is a cross-sectional view of a three-phase inverter package according to another example. 5, a power device 420 is disposed on a DBC (Direct Bonding Copper) substrate 410, and a control circuit component 440 is disposed on the control substrate 430. As shown in FIG. The control board 430 is installed to have a height different from that of the divisible board 410. The remaining space is filled with a molding material 450 such as an epoxy molding compound (EMC), and a plurality of external leads 471 and 472 are disposed on both sides of the molding material 450. The first outer leads 471 are directly connected to the divisible substrate 410. Some are located within the molding material 450 and some are exposed outside the molding material 450. The thickness of each of the first outer leads 471 is smaller than the thickness of the divisible substrate 410 and specifically the thickness of the portion 411 of the divisible substrate 410 that is in contact with the first outer lead 471 . The second outer leads 472 are connected directly to the control board 430. Some are located within the molding material 450 and some are exposed outside the molding material 450. The thickness of each of the second outer leads 472 is smaller than the thickness of the control board 430. The molding material 450 exposes the bottom surface of the divisible substrate 410, the first outer lead 471, and the second outer lead 472. 3, a part of the plurality of first outer leads 471 is disposed in at least one hole formed on both sides of the package so that the first outer leads 471 are arranged in a zigzag shape . The powering device 420 may be a switching device 421, such as, for example, an IGBT or MOSFET, and a freewheeling diode 422, and the control circuitry 440 may be, for example, a high voltage or low voltage integrated Can be a circuit. The lead frame 430 on which the control circuit component 440 is mounted and the power device 420 are connected to each other by an aluminum wire 460 having good conductivity. The DBC substrate 410 has excellent dielectric strength and excellent thermal conductivity. Since the bottom surface of the DBC substrate 410 is exposed to the outside, heat generated in the device can be effectively discharged to the outside of the package.

410 ... DBC substrate 420 ... power device
430 ... control board 440 ... control circuit parts
450 ... molding material 460 ... aluminum wire
471 ... first outer lead 472 ... second outer lead

Claims (9)

A first and a second switching elements for generating a U-phase output signal in a three-phase load; third and fourth switching elements for generating a V-phase output signal in the three-phase load; A power device including fifth and sixth switching devices for generating an output signal;
A first high voltage integrated circuit for controlling a switching operation of the first switching device; a second high voltage integrated circuit for controlling a switching operation of the third switching device; a third high voltage integrated circuit for controlling a switching operation of the fifth switching device; A control circuit component including an integrated circuit and a low-voltage integrated circuit for controlling switching operations of the second, fourth, and sixth switching elements;
A current detection terminal connected to one terminal of each of the fourth through sixth switching elements to detect an output current flowing to the switching element;
(DBC) substrate on which the power capacitor is installed;
A control board having a different height from the divisible board, the control board being installed independently from the divisible board and having the control circuitry installed thereon;
A plurality of first outer leads arranged to be connected to one side of the divisible substrate;
A plurality of second outer leads arranged to be connected to one side of the control board; And
And a molding material arranged on the divisible substrate and the control substrate to cover the divisible substrate and the control substrate and expose the plurality of first and second outer leads,
Wherein the thickness of each of the first outer leads is less than the thickness of the divisible substrate and the thickness of each of the second outer leads is less than the thickness of the control board. A first and a second switching elements for generating a U-phase output signal in a three-phase load; third and fourth switching elements for generating a V-phase output signal in the three-phase load; A power device including fifth and sixth switching devices for generating an output signal;
A first high voltage integrated circuit for controlling a switching operation of the first switching device; a second high voltage integrated circuit for controlling a switching operation of the third switching device; a third high voltage integrated circuit for controlling a switching operation of the fifth switching device; A control circuit component including an integrated circuit and a low-voltage integrated circuit for controlling switching operations of the second, fourth, and sixth switching elements;
A current detection terminal connected to one terminal of each of the fourth through sixth switching elements to detect an output current flowing to the switching element;
A ceramic substrate on which the power capacitor is installed;
A control board which is spaced apart from the ceramic substrate and has a different height, the control board being installed independently from the ceramic substrate and having the control circuit components mounted thereon;
A plurality of first outer leads arranged to be connected to one side of the ceramic substrate;
A plurality of second outer leads arranged to be connected to one side of the control board; And
And a molding material arranged on the ceramic substrate and the control substrate so as to cover the ceramic substrate and the control substrate while exposing the plurality of first and second outer leads while subjecting the bottom surface of the ceramic substrate to intrusion,
Wherein the thickness of each of the first outer leads is less than the thickness of the ceramic substrate and the thickness of each of the second outer leads is less than the thickness of the control board. 3. The method according to claim 1 or 2,
Second, and third bootstrap diodes, respectively, configured to apply a bootstrap voltage to the first high voltage integrated circuit, the second high voltage integrated circuit, and the third high voltage integrated circuit. The method of claim 3,
Wherein each anode of the first, second and third bootstrap diodes is connected in common to a voltage input terminal of each of the first, second and third high voltage integrated circuits, the first, And each cathode of the third bootstrap diode is connected to a high voltage side floating voltage terminal of each of the first, second and third high voltage integrated circuits. 3. The method according to claim 1 or 2,
Wherein the first to sixth switching elements are power MOSFETs. 3. The method according to claim 1 or 2,
Wherein the first to sixth switching elements are insulated gate bipolar transistors (IGBTs), and further comprising a free wheeling diode having both ends connected to the emitter and the collector of the insulated gate bipolar transistor. 3. The method according to claim 1 or 2,
Wherein the plurality of first and second outer leads are arranged on both sides of the package, respectively. 8. The method of claim 7,
Wherein a portion of the plurality of first outer leads is disposed in at least one groove formed on both sides of the package such that the first outer leads are arranged in a zigzag shape. A plasma display panel comprising: a first substrate on which a power consumption cell is installed;
A second substrate spaced apart from the first substrate and having a different height, the second substrate being provided independently of the first substrate and having the control circuit component mounted thereon;
A plurality of first outer leads arranged to be connected to one side of the first substrate;
A plurality of second external leads arranged to be connected to one side of the second substrate; And
And a molding material arranged on the first and second substrates to cover the first and second substrates and expose the plurality of first and second outer leads,
Wherein the thickness of each of the first outer leads is less than the thickness of the first substrate and the thickness of each of the second outer leads is less than the thickness of the second substrate.

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