KR20080048575A - Liquid crystal display panel and manufacturing method thereof - Google Patents

Abstract

An LCD(Liquid Crystal Display) panel and a manufacturing method thereof are provided to minimize a connection portion of a contact hole and the first electrode and lines connected with the first electrode, thereby preventing the corrosion of a gate metal layer from generating. A color filter substrate(120) has a common electrode. A TFT(Thin Film Transistor) substrate(130) is located oppositely to the color filter substrate. A liquid crystal layer is injected between the color filter substrate and the TFT substrate. A first electrode(200) is formed on the TFT substrate so that the common voltage is supplied. A conductive dot is interposed between the color filter substrate and the TFT substrate so that the common voltage is supplied to the common electrode. An insulating layer has a contact hole(140) for exposing the first electrode. A second electrode(210) connects the conductive dot with the first electrode. A slit portion is formed to the connection portion of the first electrode and the contact hole. The first electrode is formed within the inside of the contact hole.

Description

Liquid crystal display panel and its manufacturing method {LIQUID CRYSTAL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF}

1 is a plan view illustrating a liquid crystal display panel according to an exemplary embodiment of the present invention.

2A and 2B are enlarged views of portion A of FIG. 1.

3 is a cross-sectional view illustrating a cross section taken along lines II ′ and II-II ′ of FIG. 1 to illustrate a liquid crystal display panel according to an exemplary embodiment of the present invention.

4A through 4E are cross-sectional views illustrating a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention, for each mask process.

<Description of the symbols for the main parts of the drawings>

10: data line 20: gate line

30: source electrode 40: drain electrode

50: pixel contact hole 60: gate electrode

70: pixel electrode 80: storage electrode

90: storage voltage supply line 100: binder

110: connection line 120: color filter substrate

130: thin film transistor substrate 140: pad contact hole

150: second common pad electrode 160: common voltage pad

170: first common pad electrode 180: common voltage supply line

190: gate insulating film 200: first electrode

210: second electrode 220: conductive dot

230: black matrix 240: active layer

250: ohmic contact layer 260: common electrode

280: contact hole 290: color filter

A liquid crystal display device is an apparatus which displays an image by adjusting the light transmittance of liquid crystal using an electric field. Such a liquid crystal display includes a thin film transistor substrate and a color filter substrate bonded together with a liquid crystal interposed therebetween.

The thin film transistor substrate includes a gate line and a data line formed to cross each other, a thin film transistor formed at an intersection thereof, a pixel electrode connected to the thin film transistor, and a common electrode line for applying a common voltage to the common electrode of the color filter substrate. do.

In the color filter substrate, a black matrix for preventing light leakage, a color filter for color implementation, a column spacer for maintaining a cell gap, and a common electrode forming an electric field with the pixel electrode are formed on the substrate.

In addition, at a predetermined position between the thin film transistor substrate and the color filter substrate, a conductive material such as silver or gold is formed in a dot shape to apply a common voltage of the common electrode line of the thin film transistor substrate to the common electrode of the color filter substrate. A short point is formed. These short points are generally located outside the seal line and are in direct contact with the outside and are exposed to the effects of moisture and temperature.

The gate metal forming the short point uses a double structure of a lower film made of Cr and an upper film made of AlNd on the lower film. This short point structure etches SiNx formed on the gate metal and then etches AlNd again. ITO is deposited so that Cr and ITO (Indium Tin Oxide) are in direct contact. However, in this case, since skew occurs in the etched AlNd, there is a portion that cannot be covered by ITO, and corrosion proceeds along this portion.

Therefore, there is a big problem that excessive corrosion proceeds to a specific part of the short point, and the line connected to the short point is disconnected.

Accordingly, an object of the present invention is to provide a liquid crystal display panel and a method for manufacturing the same, which can prevent corrosion in a region where a short point is formed.

In order to achieve the above technical problem, the present invention includes a color filter substrate having a common electrode, a thin film transistor substrate facing the color filter substrate, and a liquid crystal layer injected between the color filter substrate and the thin film transistor substrate. A contact hole formed on the thin film transistor substrate to expose the first electrode and a conductive dot interposed between the color filter substrate and the thin film transistor substrate to supply a common voltage to the common electrode, and a contact hole to expose the first electrode. And a second electrode connecting the conductive dot and the first electrode to each other, wherein a slit portion is formed at a contact portion between the first electrode and the contact hole.

In addition, the first electrode is preferably formed in the contact hole.

Specifically, the first electrode is preferably connected to a storage voltage supply line for supplying a storage voltage.

The first electrode may be connected to a common voltage supply line supplying a common voltage from an external power supply unit.

Here, the contact hole is preferably formed in the first electrode.

Here, the first electrode is preferably formed of a single film structure of chromium.

In order to achieve the above technical problem, there is provided a color filter substrate comprising a common electrode formed on an upper substrate, and an insulating film having a contact hole facing the upper substrate and exposing the first electrode, and the insulating film Providing a lower substrate including a second electrode connecting the first electrode to the first electrode, a pixel electrode forming an electric field with the common electrode, and a thin film transistor connected to the pixel electrode, and supplying a common voltage to the common electrode To form a conductive dot between the common electrode and the second electrode overlapping the contact hole and the contact hole peripheral portion and connected to each of the common electrode and the second electrode and the upper substrate and the lower substrate It provides a method for manufacturing a liquid crystal display panel comprising the step of bonding.

The method may further include forming a contact hole connecting the first electrode and the second electrode to the insulating layer.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a plan view illustrating a liquid crystal display panel according to an exemplary embodiment of the present invention, FIGS. 2A and 2B are enlarged views of part A of FIG. 1, and FIG. 3 is a liquid crystal display panel according to an exemplary embodiment of the present invention. For the sake of brevity, cross-sectional views are respectively taken along the lines II 'and II-II' of FIG. 1.

1 to 3 includes a thin film transistor substrate 130 and a color filter substrate 120 bonded by a bonding material with a liquid crystal interposed therebetween.

In detail, the color filter substrate 120 includes a black matrix 230, a color filter 290, and a common electrode 260 sequentially formed on the color filter substrate.

The black matrix 230 is formed in a matrix form on the color filter substrate to divide the area of the color filter substrate 120 into a plurality of cell areas in which the color filter 290 is to be formed, and the optical interference and external light between adjacent cells. Prevent reflection

The color filter 290 is formed to be divided into red (R), green (G), and blue (B) in the cell region divided by the black matrix 230 to transmit red, green, and blue light, respectively. In this case, various colors are realized through additive mixing colors of red (R), green (G), and blue (B) light transmitted through the color filters 290 of red (R), green (G), and blue (B), respectively. .

The common electrode 260 is a transparent conductive layer which is entirely coated on the color filter 290, and supplies a common voltage Vcom, which is a reference when driving the liquid crystal, through the conductive dot 220. In this case, an overcoat (not shown) to planarize the common electrode 260 by preventing a step from being formed in the common electrode 260 due to the step of the color filter 290 between the common electrode 260 and the color filter 290. May be further formed.

The thin film transistor substrate 130 supplies a common voltage Vcom from a thin film transistor connected to the gate line 20 and the data line 10, a pixel electrode 70 connected to the thin film transistor, and an external power supply (not shown). Is connected to the common electrode 260 through the first electrode 200 and the conductive dot 220 connected to the common voltage supply line 180, the common voltage supply line 180, and overlaps the first electrode 200. A contact hole 280 is formed to electrically connect the second electrode 210 to the first and second electrodes 210 and penetrate the gate insulating layer 190.

The thin film transistor selectively supplies the data signal from the data line 10 to the pixel electrode 70 in response to the gate signal from the gate line 20. To this end, the thin film transistor includes a gate electrode 60 connected to the gate line 20, a source electrode 30 connected to the data line 10, a drain electrode 40 connected to the pixel electrode 70, and a gate electrode. An active layer 240 forming a channel between the source electrode 30 and the drain electrode 40 while overlapping the gate insulating layer 190 with the active layer 240, the active layer 240, the source electrode 30, and the drain. An ohmic contact layer 250 for ohmic contact with the electrode 40 is provided.

The pixel electrode 70 is connected to the drain electrode 40 of the thin film transistor exposed through the pixel contact hole 50 in each sub pixel area. When the video signal is supplied through the thin film transistor, the pixel electrode 70 generates a vertical electric field with the common electrode 260 supplied with the common voltage Vcom. Accordingly, the liquid crystal molecules having the dielectric anisotropy oriented between the thin film transistor substrate 130 and the color filter substrate 120 are driven. In addition, the light transmittance passing through the pixel region is changed according to the driving degree of the liquid crystal molecules, thereby achieving gray scale.

In the region of the thin film transistor substrate 130 that does not overlap the color filter substrate 120, a plurality of metal pads are provided to supply a power signal including a common voltage Vcom, and an electrical signal such as a control signal and an image signal from the outside. Here, the common voltage pad 160, which supplies the common voltage Vcom among the metal pads, is connected to the first electrode 200.

The common voltage pad 160 is formed of the same metal material as the gate metal such as the gate line 20 and the gate electrode 60 or the same metal as the data metal such as the data line 10 and the source and drain electrodes 40. . The first common pad electrode 170, the common voltage supply line 180, the pad contact hole 140, and the second common pad electrode 150 are provided.

The common voltage supply line 180 extends from the first common pad electrode 170 to be connected to the first electrode 200, and a plurality of slits are formed at the connection portion.

The pad contact hole 140 is formed through the gate insulating layer 190 and the passivation layer 270.

The second common pad electrode 150 is in direct contact with the outside and is in contact with the first common pad electrode 170 through the pad contact hole 140. In this case, the second common pad electrode 150 may be formed of the same metal as the pixel electrode 70.

The first electrode 200 is connected through the common voltage supply line 180 and at least one is formed in the non-display area of the thin film transistor substrate 130. The first electrode 200 is formed of a single layer structure of chromium (Cr), whereas a gate metal layer of the gate line 20 and the gate electrode 60 is formed of a double layer structure of Cr and AlNd. Therefore, when the gate patterns of the gate line 20 and the gate electrode 60 are formed, the first electrode 200 is formed of the same metal layer and has a single layer through an etching process. In addition, the first electrode 200 may include Cr, Al, Cu, MO, Ag, or an alloy thereof. A plurality of slits are formed in the first electrode 200.

The second electrode 210 is connected to the first electrode 200 through the contact hole 280, and overlaps a larger area than the first electrode 200. The second electrode 210 may be formed of a conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) having high moisture resistance. That is, it is preferable to be formed of the same metal as the pixel electrode 70.

The conductive dot 220 includes silver (Ag) or gold (Au) conductive dots in the sealant. The conductive dot 220 is interposed between the second electrode 210 of the thin film transistor substrate 130 and the common electrode 260 of the color filter substrate 120 to apply a common voltage Vcom applied from the outside to the color filter. Supply to common electrode 260 of 290. The common voltage Vcom may be used as the storage voltage Vst supplied to the storage electrode 80 of the liquid crystal display panel. To this end, the thin film transistor substrate 130 further includes a storage voltage supply line 90 connected to the first electrode 200 and a storage electrode 80 branched from the storage voltage supply line 90.

The contact hole 280 uses the gate insulating layer 190 formed on the first electrode 200 and the substrate to form the first electrode 200 on the first electrode 200 in a size larger or smaller than that of the first electrode 200. It is formed to expose and is formed to electrically connect the first electrode 200 and the second electrode 210. A plurality of slits are formed in the first electrode 200 or the common voltage supply line 180 and the storage voltage supply line 90 which are in contact with the periphery of the contact hole 280.

The storage voltage supply line 90 is formed of the same metal as the gate metal including the gate line 20, the gate electrode 60, and the first electrode 200. The storage voltage supply line 90 is formed in parallel with the data line 10 to supply the storage voltage Vst to the storage electrode 80. On the other hand, the slit through which the ultraviolet light (UV) can pass for the curing of the binder 100 because it passes through the binder 100 is formed.

The storage electrode 80 branches from the storage voltage supply line 90 and is formed to be parallel to the gate line 20. The storage electrode 80 overlaps the pixel electrode 70 to form a storage capacitor. The storage electrode 80 may be formed to be parallel to the gate line 20 or may be formed to overlap the pixel electrode 70 along the periphery of the pixel electrode 70.

Next, a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention will be described with reference to FIGS. 4A through 4E.

4A is a cross-sectional view illustrating a first mask process in a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

Referring to FIG. 4A, a gate pattern including a gate line 20, a gate electrode 60, a first electrode 200, a common voltage supply line 180, and a first common pad electrode 170 on a lower substrate. To form. As shown, the gate pattern is formed of a double layer. That is, the gate metal layer is formed on the lower substrate by sputtering two metals, and then forming the gate pattern through a photolithography process using the same mask to form the gate pattern with the double layer.

Specifically, a gate metal layer including a metal material such as Cr, Al, Mo, Ag, Cu or an alloy thereof is deposited on the lower substrate by a sputtering method, and then a material having a low specific resistance such as Al or AlNd is deposited thereon. Deposit. Thereafter, a gate pattern including the gate line 20, the gate electrode 60, the first electrode 200, the common voltage supply line 180, and the first common pad electrode 170 is formed through a photolithography process. do. In this case, the storage voltage supply line 90 branched from the storage voltage supply line 90 and the storage voltage supply line 90 connected to the first electrode 200, and the storage electrode 80 branched from the storage voltage supply line 90. ) May be further formed, and when a plurality of conductive dots are formed, a connection line 110 may be further formed to connect the first electrodes 200 connected to the conductive dots 220.

4B is a cross-sectional view illustrating a second mask process in a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

Referring to FIG. 4B, a gate insulating layer 190 covering the gate pattern is formed on the gate pattern. As the gate insulating layer 190, an inorganic insulating material such as SiNx or SiOx is used. Next, a semiconductor pattern including an active layer 240 formed of amorphous silicon and an ohmic contact layer 250 formed of amorphous silicon doped with impurities is formed on the gate insulating layer 190. In the semiconductor pattern, the active layer 240 and the ohmic contact layer 250 are sequentially stacked and patterned by a photolithography process using a second mask.

4C is a cross-sectional view illustrating a third mask process in a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

Referring to FIG. 4C, the data line 10 crossing the gate line 20 and the source electrode 30 and the source electrode 30 connected to the data line 10 intersect the gate line 20 on the gate insulating layer 190 on which the semiconductor pattern is formed. The data pattern including the drain electrode 40 facing the substrate is formed. The data pattern is patterned by a photolithography process using a third mask after depositing a data metal layer on the gate insulating layer 190 and the semiconductor pattern. The data metal layer may comprise Al, Mo, Cu, Cr, Ti metal or alloys thereof.

Next, the ohmic contact layer 250 exposed between the source electrode 30 and the drain electrode 40 is removed to expose the active layer 240.

In the method of manufacturing the thin film transistor substrate 130 according to the embodiment of the present invention, the semiconductor pattern and the data pattern are formed by using different masks. The semiconductor pattern and the data pattern may be formed using the same mask, such as a two-tone mask having a different thickness of the mask for each region.

4D is a cross-sectional view illustrating a fourth mask process in a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

Referring to FIG. 4D, a passivation layer 270 is formed on the lower substrate, and the passivation layer 270 is patterned through a photolithography process using a fourth mask to expose a portion of the first electrode 200. The pixel contact hole 50 exposing the contact hole 280 and the drain electrode 40 is formed. The passivation layer 270 uses the same inorganic insulating material as the gate insulating layer 190 or uses an organic insulating material.

4E is a cross-sectional view illustrating a fifth mask process in a method of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention.

Referring to FIG. 4E, the pixel electrode 70 connected to the drain electrode 40 through the pixel contact hole 280 on the lower substrate, and the first electrode 200 connected to the first electrode 200 through the contact hole 280. A transparent conductive pattern including the two electrodes 210 is formed on the passivation layer 270. In the pixel electrode 70 and the second electrode 210, a transparent conductive material such as indium tin oxide (ITO), indium oxide (IO), and indium zinc oxide (IZO) is deposited on the passivation layer 270, and then a fifth mask process. Patterning is performed through the photolithography process.

The conductive dot 220 is formed on the thin film transistor substrate 130 thus formed, and the color filter substrate 120 having the common electrode 260 is bonded to each other through the bonding material 100 to manufacture a liquid crystal display panel. In this case, the conductive dot 220 supplies a common voltage supplied from the outside to the common electrode 260 of the color filter substrate 120.

As described above, the liquid crystal display according to the present invention has an effect of preventing corrosion of the gate metal layer by preventing corrosion of the gate metal layer by minimizing a portion where the lines connected to the first electrode and the first electrode meet the contact hole. have.

In the detailed description of the invention described above with reference to the preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge of the present invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the spirit and scope of the art.

Claims (8)

A color filter substrate configured with a common electrode; A thin film transistor substrate facing the color filter substrate; A liquid crystal layer injected between the color filter substrate and the thin film transistor substrate; A first electrode formed on the thin film transistor substrate and supplied with a common voltage; Conductive dots interposed between the color filter substrate and the thin film transistor substrate to supply a common voltage to the common electrode; An insulating film having a contact hole exposing the first electrode; A second electrode connecting the conductive dot and the first electrode; And a slit portion is formed at a contact portion between the first electrode and the contact hole.        The method of claim 1,       And the first electrode is formed in the contact hole.  The method of claim 2, And the first electrode is connected to a storage voltage supply line for supplying a storage voltage. The method of claim 2, And the first electrode is connected to a common voltage supply line for supplying a common voltage from an external power supply unit. The method of claim 1, And the contact hole is formed in the first electrode. The method of claim 1, The first electrode is formed of a single layer structure of chromium. Providing a color filter substrate including a common electrode formed on the upper substrate; An insulating film having a contact hole facing the upper substrate and exposing the first electrode, a second electrode connecting the first electrode to the insulating film, a pixel electrode forming an electric field with the common electrode, and the pixel Providing a lower substrate including a thin film transistor connected to an electrode; In order to supply a common voltage to the common electrode, a conductive dot is formed between the common electrode and the second electrode so as to overlap with the contact hole and the contact hole peripheral part and is connected to each of the common electrode and the second electrode. step; And And bonding the upper and lower substrates together. The method of claim 6, And forming a contact hole connecting the first electrode and the second electrode to the insulating layer.

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