KR20080032323A - Liquid crystal display device and method for manufacturing the same - Google Patents

Abstract

An LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to enable only a column spacer for maintaining a cell gap to be contacted with a corresponding structure with a small area in an attachment state, thereby stably removing touch defects caused by reduction of a friction surface. First and second substrates(100,200) face each other. Gate lines(101) and data lines define a pixel area by crossing each other on the first substrate. A pixel electrode is formed on the pixel area. A TFT(Thin Film Transistor) comprises a gate electrode protruded from the gate line at an intersection between the gate line and the data line, a semiconductor layer on the gate electrode, a source electrode protruded from the data lines of both sides of the semiconductor layer, and a drain electrode spaced from the source electrode. On the gate line, a first protrusion(130) is formed by lamination of a first pattern(110a) of the same layer as the semiconductor layer and a second pattern of the same layer as the data line. A second protrusion(140) is composed with the same layer as the semiconductor layer on the first substrate. A first column spacer(210) is formed on the second substrate so that the first protrusion can be corresponded to its part. A second column spacer(220) is formed on the second substrate so that the second protrusion can be corresponded to its part.

Description

Liquid crystal display device and method for manufacturing the same

1 is a cross-sectional view of an LCD including a column spacer.

2A and 2B are plan and cross-sectional views illustrating a touch failure of a liquid crystal display including a column spacer.

3 is a cross-sectional view showing the protrusion structure of the liquid crystal display of the present invention.

4 is a cross-sectional view of a liquid crystal display according to a first exemplary embodiment of the present invention.

5 is a cross-sectional view of a liquid crystal display according to a second exemplary embodiment of the present invention.

6 is a plan view showing a liquid crystal display of the present invention.

FIG. 7 is a cross-sectional view taken along line II through II ', II through II', and III through III 'of FIG.

8A to 8E are cross-sectional views taken along line I-I ', II-II', III-III 'and IV-IV' of FIG.

* Description of the main parts of the drawings *

100: first substrate 101: gate line

101a: gate electrode 102: data line

102a: source electrode 102b: drain electrode

103: pixel electrode 104: semiconductor layer

105: gate insulating film 106: protective film

106a: contact hole 107: common line

107a: common electrode 110a: first semiconductor layer pattern

110b: second semiconductor layer pattern, second protrusion 130: first protrusion

135: first projection 140: second projection

200: second substrate

201: black matrix layer 202: color filter layer

203: overcoat layer 211: semiconductor layer material layer

212: source / drain metal layer 210: first column spacer

220: second column spacer 230: third column spacer

300: mask 301: light shield

302: transflective part 303: transmissive part

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having various relationship between a column spacer and an opposing substrate so as to prevent display defects even when the gate line thickness is small, and a manufacturing method thereof.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELD), and vacuum fluorescent (VFD) Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, LCD is the most widely used as the substitute for CRT (Cathode Ray Tube) for mobile image display device because of its excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention has been developed in various ways such as a television and a computer monitor for receiving and displaying broadcast signals.

In order to use such a liquid crystal display as a general screen display device in various parts, it is a matter of how high quality images such as high definition, high brightness and large area can be realized while maintaining the characteristics of light weight, thinness and low power consumption. Can be.

The general liquid crystal display device is comprised from the 1st board | substrate and the 2nd board | substrate bonded by the fixed space, and the liquid crystal layer injected between the said 1st board | substrate and the 2nd board | substrate.

In more detail, the first substrate has a plurality of gate lines in one direction and a plurality of data lines at regular intervals in a direction perpendicular to the gate line to define a pixel area. A pixel electrode is formed in each of the pixel regions, and a thin film transistor is formed at a portion where the gate line and the data line cross each other, and the data signal of the data line is applied to each pixel electrode according to a signal applied to the gate line. To apply.

In addition, a black matrix layer is formed on the second substrate to block light in portions other than the pixel region, and R, G, and B color filter layers are formed on portions corresponding to the pixel regions. The common electrode is formed on the color filter layer to implement an image.

In the liquid crystal display as described above, the liquid crystal of the liquid crystal layer formed between the first and second substrates is aligned by an electric field between the pixel electrode and the common electrode, and the light passes through the liquid crystal layer according to the degree of alignment of the liquid crystal layer. You can express the image by adjusting the amount of.

Such a liquid crystal display is called a twisted nematic (TN) mode liquid crystal display, and the TN mode liquid crystal display has a disadvantage of having a narrow viewing angle, and thus an in-plane (IPS: In-Plane) for overcoming the disadvantages of the TN mode. Switching mode liquid crystal display device has been developed.

In the transverse electric field (IPS) mode liquid crystal display, a pixel electrode and a common electrode are formed parallel to each other at a predetermined distance in a pixel area of the first substrate so that a transverse electric field (horizontal electric field) is generated between the pixel electrode and the common electrode. The liquid crystal layer is aligned by the lateral electric field.

Meanwhile, spacers are formed between the first and second substrates of the liquid crystal display device formed as described above to maintain a constant gap between the liquid crystal layers.

Such spacers are divided into ball spacers or column spacers according to their shape.

The ball spacer has a spherical shape, is distributed and manufactured on the first and second substrates, the movement is relatively free even after the bonding of the first and second substrates, and the contact area with the first and second substrates is small.

On the other hand, the column spacer is formed in an array process on the first substrate or the second substrate, and is fixed in a pillar shape having a predetermined height on the predetermined substrate. Therefore, the contact area with the 1st, 2nd board | substrate is relatively large compared with a ball spacer.

Hereinafter, a liquid crystal display having a conventional column spacer will be described with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a liquid crystal display including a column spacer.

As shown in FIG. 1, a liquid crystal display including a column spacer includes a column spacer formed between a first substrate 30 and a second substrate 40 facing each other, and the first and second substrates 30 and 40. 20) and a liquid crystal layer (not shown) filled between the first and second substrates 30 and 40.

On the first substrate 30, the gate lines 31 and the data lines (not shown) are arranged perpendicularly to each other to define pixel regions, and the gate lines 31 and the data lines cross each other. A thin film transistor TFT is formed, and a pixel electrode (not shown) is formed in each pixel area.

The black matrix layer 41 is formed on the second substrate 40 to correspond to an area except the pixel area, and the color filter layer 42 on the stripe corresponding to the pixel areas on the vertical line parallel to the data line is formed. The common electrode or overcoat layer 43 is formed on the front surface.

Here, the column spacer 20 is formed corresponding to a predetermined position on the gate line 31.

In addition, a gate insulating layer 36 is formed on the entire surface of the substrate including the gate line 31 on the first substrate 30, and a passivation layer 37 is formed on the gate insulating layer 36.

2A and 2B are plan and cross-sectional views illustrating a touch failure of a liquid crystal display including a column spacer.

As shown in FIGS. 2A and 2B, when the liquid crystal display device including the above-described conventional column spacer touches the surface of the liquid crystal panel 10 in a predetermined direction using a hand or other object, the touched portion Stain occurs at Such spots are referred to as spot spots generated at the time of touch, and are referred to as touch spots, and are also referred to as touch defects because spots are observed on the screen.

Such a touch failure is considered to be large because the contact area between the column spacer 20 and the first substrate 1 facing the column spacer 20 is larger than the structure of the previous ball spacer. That is, since the column spacer 20 formed in a cylindrical shape compared to the ball spacer has a large contact area with the first substrate 1 as shown in FIG. 2B, the first and second substrates 1 and 2 are touched. After the liver is shifted, it takes a long time to restore to the original state, so the stain remains until the original state is restored. In this case, the liquid crystals (3) are collected at the end portion pushed by the touch during the touch, and the liquid crystals are insufficient until the spots passed during the touch are restored, so that the appropriate amount of liquid crystal is removed from the touch region until the original state is restored. Normal driving is difficult because it does not exist, and in addition, a portion of the black matrix layer that is to be covered by the shift between the substrates at the time of touch may be exposed, resulting in light leakage defects.

However, the conventional liquid crystal display device as described above has the following problems.

First, since the contact area between the column spacer and the opposing substrate is large, when the substrate is shifted during the touch due to the large frictional force, it takes a long time to recover to the original state, and during the restoration time, a portion to be covered by the black matrix layer is exposed. A touch defect in which optical abnormality occurs due to the liquid crystal defect of the touched part, etc. is observed, such as a light leakage defect is observed.

Second, when the liquid crystal panel including the column spacer is pressed by applying a local region with a predetermined force, staining by pressing occurs at the corresponding region. This is referred to as paint stain, which is more severe when employing a structure for compensating for the touch failure.

The present invention has been made to solve the above problems and provides a liquid crystal display device and a method of manufacturing the same having a variety of correspondence between the column spacer and the opposing substrate to prevent display defects even when the thickness of the gate line is small. There is a purpose.

In order to achieve the above object, a liquid crystal display of the present invention includes a first substrate and a second substrate facing each other, a gate line and a data line crossing each other on the first substrate to define a pixel region, and the pixel. A pixel electrode formed in the region, a gate electrode protruding from the gate line at an intersection of the gate line and the data line, a semiconductor layer above the gate electrode, and a source electrode protruding from the data lines on both sides of the semiconductor layer; And a thin film transistor comprising a drain electrode spaced apart from each other, a first protrusion formed on the gate line, and a laminate of a first pattern of the same layer as the semiconductor layer and a second pattern of the same layer as the data line. A second projection formed of the same layer as the semiconductor layer on the first substrate, and the first projection corresponding to a portion thereof; A first column spacer formed on the second substrate, and a second column spacer formed on the second substrate and a liquid crystal layer filled between the first and second substrates so as to correspond to a portion of the second projection. It is characterized by what is done.

A third column spacer is further formed on the gate line on which the first protrusion is not formed on the second substrate.

A common line is further formed on the first substrate in a direction parallel to the gate line.

The second protrusion is formed in an area between the gate line and the common line.

The gate line is formed at a lower height than the semiconductor layer.

The gate line is made of a low resistance metal.

The low resistance metal is any one of copper (Cu), aluminum (Al), gold (Au), silver (Ag), and alloys thereof.

The first protrusion is formed to a thickness of 4000 ~ 7000Å.

The second protrusion is formed to a thickness of 2000 ~ 3000Å.

A gate insulating film is further formed between the gate line and the layers of the first and second protrusions.

A black matrix layer covering at least the gate line, the data line, and the thin film transistor forming region on the second substrate; And a color filter layer formed corresponding to at least the pixel areas. Here, the first to third column spacers are formed on the black matrix layer.

The liquid crystal display of the present invention for achieving the same object is a first step having a first substrate and a second substrate facing each other, and a first to third height (h1> h2> h3) in order on the first substrate The first to third stepped portions, the first column spacer on which the first stepped portion and the partial surface correspond to and contact on the second substrate, and the second stepped portion and the partial surface on the second substrate And a second column spacer correspondingly formed, a third column spacer formed on the second substrate corresponding to the third stepped portion, and a liquid crystal layer filled between the first and second substrates. There is a characteristic.

The first stepped portion includes a semiconductor layer interposed between the first wiring and the second wiring and the first and second wirings.

The second stepped portion is formed of the semiconductor layer.

The second stepped portion further includes a second wiring on the semiconductor layer.

The third stepped portion consists of the first wiring.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object comprises the steps of preparing a first substrate and a second substrate, the gate line and the data line to define a pixel region cross each other on the first substrate; Forming a pixel electrode in the pixel region, a gate electrode protruding from the gate line, a semiconductor layer on the gate electrode, and the semiconductor at an intersection of the gate line and the data line; Forming a thin film transistor comprising a source electrode protruding from the data lines on both sides of the layer and a drain electrode spaced apart from the data line; a first pattern of the same layer as the semiconductor layer and the same as the data line on the gate line; Forming a first protrusion made of a laminate of a second pattern of layers, and on the first substrate, the semiconductor layer Forming a second protrusion formed of the same layer, forming a first column spacer and a second column spacer on the second substrate such that the first protrusion and the second protrusion correspond to a portion, respectively; Another feature is that it comprises the step of forming a liquid crystal layer between the first and second substrates.

Here, in the forming of the first and second column spacers, a third column spacer is further formed on the gate line where the first protrusion is not formed on the second substrate.

In the forming of the gate line, a common line is further formed on the first substrate in a direction parallel to the gate line.

The second protrusion is formed in an area between the gate line and the common line.

The method may further include forming a black matrix layer on the second substrate, the black matrix layer covering at least the gate line, the data line, and the thin film transistor forming region; And forming a color filter layer corresponding to at least the pixel areas. In this case, the first to third column spacers are formed on the black matrix layer.

In addition, the manufacturing method of the liquid crystal display device of the present invention for achieving the same object comprises the steps of preparing a first substrate and a second substrate, a gate line in one direction on the first substrate and a gate electrode protruding therefrom Forming a data line in a direction crossing the gate line, a source electrode protruding from the data line, and a drain electrode spaced apart from each other, and forming a stack of a semiconductor layer and a metal layer at a first portion on the gate line. Forming a first protrusion, forming a second protrusion of the semiconductor layer on the first substrate on which the gate line is not formed, and partially forming the first protrusion and the second protrusion on the second substrate, respectively. Forming a first column spacer and a second column spacer, and forming a third column spacer to correspond to the gate line. And forming a liquid crystal layer between the first and second substrates.

Forming a gate insulating film on the first substrate including the gate line.

The forming of the data line, the source electrode, the drain electrode, the first protrusion, and the second protrusion may include sequentially depositing a semiconductor layer material layer and a metal material layer on the gate insulating layer, and forming an upper portion of the metal material layer. Forming a photoresist film on an entire surface of the photoresist film; and irradiating light onto the photoresist film by using a mask, wherein the data line and the first protrusion forming portion have a first height t1, and the second protrusion forming portion and the Forming a first photoresist pattern having a second height t2 <t1 at a portion between the source electrode and the drain electrode, and selectively selecting the metal material layer and the semiconductor layer material layer using the first photoresist pattern as a mask Forming a first protrusion and a second protrusion forming portion, and forming a metal layer pattern and a semiconductor layer at an intersection of the gate line and the data line; A second photoresist pattern is formed by affixing the first photoresist pattern to the extent that it is removed, and the exposed metal material layer is removed using the second photoresist pattern as a mask to form a second protrusion and a source / drain electrode. It comprises a step.

The mask is a diffraction exposure mask or a halftone mask.

In the forming of the gate line, a common line is further formed on the same layer as the gate line in a direction parallel to the gate line.

The second protrusion is formed in a region between the gate line and the common line. The gate line is formed of a low resistance metal.

The low resistance metal is made of any one of copper (Cu), aluminum (Al), gold (Au), silver (Ag), and alloys thereof.

The method may further include forming a black matrix layer covering at least the gate line and the data line on the second substrate, and forming a color filter layer formed corresponding to at least the pixel areas. In addition, the first to third column spacers are formed on the black matrix layer.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view showing the protrusion structure of the liquid crystal display of the present invention.

As shown in FIG. 3, the protrusion structure of the liquid crystal display of the present invention includes a first substrate 60 and a second substrate 70 facing each other, and a column spacer 80 formed at a predetermined portion on the second substrate 70. Projections 85 formed on the first substrate 60 to partially contact the column spacers 80 and have a volume and a corresponding surface relatively smaller than those of the column spacers 80 and the first and first It includes a liquid crystal layer (not shown) filled between the two substrates (60, 70).

As such, when the protrusions 85 are included, the first substrate 60 or the second substrate 60 may be touched when the surface of the first substrate 60 or the second substrate 70 is touched (or rubbed in one direction). When the substrate 70 is shifted relative to the counter substrate, the contact area between the column spacer 80 and the protrusion 85 is the upper surface of the column spacer 80 (the corresponding surface of the protrusion 85, the column spacer Is named based on the second substrate 70 on which the top surface of the second substrate 70 is formed. In this case, the upper area of the protrusion 85 is smaller than that of the surface corresponding to the column spacer on the surface of the second substrate 70. The friction area between the column spacer 80 and the first substrate 60, which is the opposite substrate, is reduced due to the reduction of the friction area, and therefore, the first substrate 60 or the second substrate in one direction by the touch. When 70 is pushed back, restoration to an original state is easy.

However, in the case of using the protrusion 85 having a smaller volume and surface area than the column spacer 80 having such a shape, when a force for locally pressing a predetermined portion from the outside is applied, the column is formed by the protrusion of the portion to which the force is applied. The phenomenon that the spacer 80 is crushed occurs. This is called a badness by pressing and is called a badness, and when such a badness is pressed, the spot where the crushed part is observed black is called a paint stain.

Hereinafter, the liquid crystal display of the present invention having the structure of improving the touch failure and at the same time improving the pressing unevenness which is a problem in the above-described projection structure will be described.

First Embodiment

4 is a cross-sectional view illustrating a liquid crystal display device according to a first embodiment of the present invention.

As shown in FIG. 4, the liquid crystal display according to the first exemplary embodiment of the present invention includes a first substrate 100 and a second substrate 200 facing each other and the same height on the second substrate 200. First to third column spacers 210, 220, and 230, a first protrusion 130 corresponding to the first column spacer 210, and a second protrusion corresponding to the second column spacer 220 ( 140).

Here, when the first and second substrates 100 and 200 are bonded, the first protrusion 130 has a first column having a function of maintaining a cell gap between the first and second substrates 100 and 200. It is formed to contact the spacer 210, the second protrusion 140 is formed spaced apart from the second column spacer 220 by a predetermined distance (dt2).

In addition, the first column spacer 210 and the third column spacer 230 are formed to correspond to the upper portion of the gate line 101 on the first substrate 100, and the second column spacer 220 is a gate. The line 101 is formed corresponding to the portion where the line 101 is not formed, and the portion forming the second protrusion 140 is higher than the thickness at which the gate line 101 is formed than the portion forming the first protrusion 130. do. In this case, the separation distance dt2 of the second protrusion 140 from the second column spacer 220 is equal to that of the first protrusion 130 at the thickness s of the gate line 101. It is the value (s-α) obtained by subtracting the thickness α pressed by the column spacer 210.

In addition, the interval dt1 in which the third column spacer 200 and the gate line 101 are spaced apart from each other by the thickness of the first protrusion 130 may be increased by the first protrusion 130. ) Minus the thickness (α) pressed.

As described above, the liquid crystal display according to the first exemplary embodiment of the present invention differs from each other on the first substrate 100 facing the first to third column spacers 210, 220, and 230 having the same height. With structures of height, they vary in degree of contact or separation. Therefore, in the condition of bonding, only the first column spacer 210 meets the first protrusion 130 and maintains the cell gap, and after the bonding, a weak pressure pushing in one direction is applied. In the condition, only the first column spacer 210 comes into contact with the upper surface of the protrusion 130 with a small area, thereby maintaining a small contact surface. Therefore, a small contact area between the first column spacer 210 and the protrusion 130 can be maintained, and the frictional force is small, so that the first substrate 100 or the second substrate 200 is pushed in one direction, and then It is easy to return to the state, it is possible to prevent the touch failure.

 When the external pressure is applied to any one of the first and second substrates 100 and 200, the second column spacer 220 and the third column spacer 230 are respectively the second protrusion 140 and the gate. The line 101 can be contacted, so that the first to third column spacers 210, 220, and 230 are in contact with each corresponding structure with respect to an external pressure, and can be in charge of dispersing pressure. Therefore, the pressure is concentrated on a specific column spacer, in particular, the first column spacer 210, and the first column spacer 210 is pressed back by the external pressure, and thus is deformed after the plastic deformation of the first protrusion 130. It is difficult to return and can solve the problem of poor pressing.

Here, the first protrusion 130 and the second protrusion 140 are formed together when the thin film transistor array is formed on the substrate of the first substrate 100, respectively, and the lower portions of the semiconductor layers patterns 110a and 110b and the upper portions are formed. Is a stack of source / drain metal layers 111a and 111b, where the semiconductor layer patterns 110a and 110b are defined together when the semiconductor layer is formed, and the source / drain metal layers 111a and 111b are source / drain electrodes. Is defined together during its formation.

On the other hand, the metal used as the gate line 101 is a metal having low resistance in recent years, for example, copper wiring, etc. are used, in this case, the deposition thickness of the wiring relative to the structure described in FIG. You can thin it. However, according to the structure of the first embodiment of the present invention illustrated in FIG. 4 when using such a low resistance metal as a wiring, the corresponding first substrate (1) of the first column spacer 210 and the second column spacer 220 ( The height difference of the structure on 100 is equal to the value s-α minus the thickness α of the first protrusion 130 pressed by the first column spacer 210 from the thickness s of the gate line 101. Therefore, when the thickness s of the gate line 101 becomes thinner than in the general structure, the second column spacer 220 is maintained in contact with the second protrusion 140 from being bonded. In practice, the contact area between the column spacer and the structure of the opposing substrate intended to be bonded to each other (the contact area between the first column spacer and the first protrusion) is large, so that the effect of solving the touch failure may be reduced. Can be.

Hereinafter, the liquid crystal display according to the second exemplary embodiment includes second and third column spacers, which are spaced apart from the column spacers when touched, and which come into contact with the compensation pattern or the wiring of the opposing substrate only when an external pressure is applied. Explain about.

Second Embodiment

5 is a cross-sectional view of a liquid crystal display according to a second exemplary embodiment of the present invention.

As shown in FIG. 5, in the liquid crystal display according to the second exemplary embodiment of the present invention, the structure on the first substrate 100 corresponding to the second column spacer 220 is a semiconductor layer pattern (compared to the structure shown in FIG. 4). The difference is that the second projection (110b) of a single layer consisting of 110b), the rest of the structure is the same as the structure shown in FIG. That is, the first protrusion 135 has a lower portion of the semiconductor layer pattern 110a and an upper portion of the first protrusion 135 having the same source / drain metal layer 111a as the source / drain electrode.

In the liquid crystal display according to the second exemplary embodiment of the present invention, the first to the second substrate 200 and the second substrate 200 which face each other, and the first to the second formed on the same height on the second substrate 200 The third column spacers 210, 220, and 230, the first protrusion 135 corresponding to the first column spacer 210, and the semiconductor layer pattern 110b corresponding to the second column spacer 220. 2 projections (hereinafter referred to as 110b).

Here, when the first and second substrates 100 and 200 are bonded together, the first protrusion 135 has a first column having a function of maintaining a cell gap between the first and second substrates 100 and 200. It is formed to contact the spacer 210, the second protrusion (110b) is spaced apart from the second column spacer 220 and a second interval (H2). The third column spacer 230 is disposed on the gate line 101 to be spaced apart from each other at a first interval H1. In this case, a gate insulating film (not shown in FIG. 7, 105) is interposed between the gate line 101 and the first and second protrusions 135 and 110b, and the first and second protrusions are interposed therebetween. A protective film (not shown in FIG. 7) is formed on the entire surface of the first substrate 100 including the 135 and 110b. Accordingly, although the first and second protrusions 135 and 110b are schematically illustrated in FIG. 5, the first to third column spacers may be formed when the first and second substrates 100 and 200 are bonded to each other. The portions where 210, 220, and 230 are in contact with or spaced apart from the structure between the first substrate 100 may be formed on the surface of the passivation layer 106 formed on the first and second protrusions 135 and 110b or the gate line. 101 is an upper surface of the gate insulating film 105 and the protective film 106 formed thereon. That is, the spaced intervals H2 and H1 of the second and third column spacers 220 and 230, the second protrusion 110b, and the gate line 101 are respectively formed on the first substrate 100. ) And the height at which the protective film 106 is formed.

In the liquid crystal display according to the second exemplary embodiment of the present invention, the second protrusion 110b is formed of a single layer of the semiconductor layer so that the first column spacer 210 and the first protrusion 135 meet each other. When the adhesion state is achieved, at least the thickness of the source / drain metal layer 111a of the gate line 101 and the first protrusion 135 is greater than that of the first protrusion 135 on the first substrate 100. Corresponds to the low level step.

Here, the first protrusion 135 and the second protrusion 110b are formed when the semiconductor layer and the source / drain metal layer are etched when the thin film transistor array is formed, which is a lower layer of the first protrusion 135. The semiconductor layer pattern forming the semiconductor layer pattern 110a and the second protrusion 110b is the same material and is the same layer.

In this case, the first column spacer 210 and the third column spacer 230 are formed to correspond to the upper portion of the gate line 101 on the first substrate 100, and the second column spacer 220 is The gate line 101 is formed corresponding to a portion where the gate line 101 is not formed. For example, a common line (not shown, 107 of FIG. 6) and the gate line (not shown) which are formed in parallel with the gate line 101 are formed. It can form in the area | region between 101 and. In addition, the gate line 101 is made of copper (Cu), aluminum (Al), gold (Au), silver (Ag), or a low resistance metal of an alloy layer thereof, for example, to a thickness of 2000 GPa or less. When formed, the second protrusion 110b forming portion maintains a height higher than the thickness at which the gate line 101 is formed. In this case, the second column spacer 220 is the third column spacer 230. The position corresponding to the second protrusion 110b is positioned at a portion having a relatively high height. In this case, the second separation interval H2 that the second protrusion 110b has with the second column spacer 220 is compared to the source / drain metal layer 111a as compared with the first embodiment dt2 described above. In a relatively bonded state, a sufficient separation distance between the second protrusion 110b and the second column spacer 220 is secured by a thickness increased by the thickness.

In this case, the thickness of the gate line 101 corresponding to the third column spacer 230 may be lower than the thickness of the second protrusion 110b formed of the semiconductor layer pattern when the low resistance metal is used. The first spacing H1 of the column spacer 230 and the first gate line 101 is larger than the second spacing H1. For example, when the gate line 101 is formed of a low-resistance metal, the gate line 101 may be formed to a thickness of about 1700 ~ 2000Å, and the semiconductor layer may be formed to a thickness of about 2000 ~ 3000Å slightly thicker than this. In addition, the source / drain metal layer forming the upper layer of the first protrusion 135 may be formed to a thickness of about 2500 ~ 4000Å. As a result, the first protrusion 135 is formed to a thickness of 4000 ~ 7000 Å, the second protrusion 110b is formed to a thickness of 2000 ~ 3000 Å, it may vary depending on the model of the liquid crystal display device.

As a result of the experiment, when the first protrusion 135 and the first column spacer 210 are in contact with each other and slightly pressed when the first and second substrates 100 and 200 are bonded together, the first separation interval H1 is considered. ) Is about 5500 ~ 6000Å, the second spacing (H2) is about 4500 ~ 5000Å.

 As described above, the liquid crystal display according to the second exemplary embodiment of the present invention differs from each other on the first substrate 100 facing the first to third column spacers 210, 220, and 230 having the same height. With structures of height, they vary in degree of contact or separation. Therefore, in the condition of bonding, only the first column spacer 210 meets the first protrusion 135 and functions to maintain a cell gap, and further, a touch of applying a weak pressure pushing in one direction after bonding is applied. Under the conditions, only the first column spacer 210 comes into contact with the upper surface of the first protrusion 135 with a small area, so that the small contact surface can be maintained, and thus, it is easy to return to the original state after pushing in one direction. Touch failure can be prevented.

 When the external pressure is applied to any one of the first and second substrates 100 and 200, the second column spacer 220 and the third column spacer 230 respectively have a second protrusion 110b and a gate. The line 101 can be contacted, so that the first to third column spacers 210, 220, and 230 are in contact with each counterpart with respect to an external pressure, and can be in charge of dispersing the pressure. Therefore, a pressure is concentrated on a specific column spacer, in particular, the first column spacer 210, and the first column spacer 210 is pressed back by the external pressure, and thus is deformed after the plastic deformation of the first protrusion 135. It is difficult to return and can solve the problem of poor pressing.

In addition, when the second column spacer 220 and the third column spacer 230 are spaced apart from each other with respect to the second protrusion 110b and the gate line 101, the second height H2 and the first spaced apart from each other. At a height H1, the protrusion 110b and the gate line 101 are formed in a single layer to ensure a sufficient separation distance with respect to the second protrusion 110b and the gate line 101 even when bonded. It is possible to form a sufficiently low contact density when bonding, and the second and third column spacers 220 and 230 assist the first column spacer 210 by sharing the pressure only when an external pressure is applied, thereby preventing pressing. Can be in charge of function

In addition, the liquid crystal display device of the second embodiment of the present invention is formed by forming the second projection as a single layer of the semiconductor layer pattern in a lamination structure of the semiconductor layer pattern and the source / drain metal layer, compared with the first embodiment. The upper source / drain metal layer is omitted as a result, so that even when the gate line is made of low-resistance metal, the separation space can be ensured as much as the thickness of the source / drain metal layer compared with the first embodiment, so that it is opposed to the column spacer even when bonded. It is possible to fully oppose only the first column spacer 210 and the first protrusion 110 without increasing the contact area between the structures.

FIG. 6 is a plan view illustrating a liquid crystal display of the present invention, and FIG. 7 is a cross-sectional view taken along lines II ′, II ′, II ′, and III ′ III ′ of FIG. 6.

As shown in FIGS. 6 and 7, the liquid crystal display of the present invention includes a first substrate 100 and a second substrate 200 facing each other, and a gate crossing each other on the first substrate to define a pixel region. In the intersection of the line 101 and the data line 102, the pixel electrode 103 and the common electrode 107a formed alternately in the pixel region, and the gate line 101 and the data line 102, A gate electrode 101a protruding from the gate line 101, a semiconductor layer (see 104 in FIG. 8E) above the gate electrode 101a, and the data line 102 on both sides of the semiconductor layer 104. A thin film transistor (TFT) including a protruding source electrode 102a and a drain electrode 102b spaced apart from each other, and a first pattern 110a of the same layer as the semiconductor layer 104 on the gate line 101. And a first protrusion 135 formed of a laminate of the second pattern 110b of the same layer as the data line 102. ), A second protrusion 110b formed of the same layer as the semiconductor layer 104 on the first substrate 100, and the second substrate 200 to correspond to a portion of the first protrusion 135. ) The first column spacer 210 formed on the second substrate and the second column spacer 220 formed on the second substrate 200 so as to correspond to a portion thereof. It includes a liquid crystal layer (not shown) filled between the two substrates.

The pixel electrode 103 is electrically connected to the drain electrode 102b of the thin film transistor TFT and is branched to form a zigzag shape. The common electrode 107a is parallel to the pixel electrode 103. And are formed alternately. The common electrode 107a is branched from the common line 107. Here, the first storage electrode 103a is integral with the pixel electrode 103 and connects the branched pixel electrodes 103. ) Overlaps the common line 107 to form a storage capacitor at the overlapped portion.

In this case, the thin film transistor TFT is defined in a region between a source electrode 102a and a drain electrode 102b having a 'U' shape, and the channel is formed along the inside of the shape of the source electrode 102a. It is defined as U '. The thin film transistor TFT may include a gate electrode 101a protruding from the gate line 101, a 'U' source electrode 102a protruding from the data line 102, and the 'U'. The drain electrode 102b is formed to be spaced apart from the female source electrode 102a by a predetermined interval and enters into the 'U'-shaped source electrode 102a. In addition, a semiconductor layer (refer to 104 in FIG. 8E) is disposed below the data line 102, the source electrode 102a, the drain electrode 102b, and the channel region between the source electrode 102a and the drain electrode 102b. More is formed. Here, the semiconductor layer is formed of a laminate of an amorphous silicon layer (not shown) and an n + layer (impurity layer) (not shown) from below, and corresponds to a region between the source electrode 102a and the drain electrode 102b. In the channel region, the n + layer (impurity layer) is removed. The semiconductor layer may be selectively formed only under the source / drain electrodes 102a and 102b and the region therebetween, or the data line 102, the source electrode 102a and the region except for the channel region. It may be formed under the drain electrode 102b.

The gate line 101, the gate electrode 101a, the common line 107, and the common electrode 107a may be formed of the same metal on the same layer.

A gate insulating film 105 is interposed between the gate line 101 and the semiconductor layer, and a protective film 106 is interposed between the data line 102 and the pixel electrode 103. .

Meanwhile, the second storage electrode integrated with the common line 107 passing through the pixel region, the first storage electrode 103a formed thereon, and the gate insulating layer 105 and the passivation layer 106 interposed between the two electrodes. ) Constitutes a storage capacitor.

Here, the drain electrode 102b and the first storage electrode 103a formed between the different layers may be contact holes 106a formed by removing the passivation layer 106 on an upper portion of the drain electrode 102b. Contact via).

Meanwhile, as illustrated in FIG. 6, the shape of the source electrode 102a is 'U', and the liquid crystal display having the 'U' channel has been described, but the '-' character in addition to the 'U' shape. The channel may be made to have a shape or other shape.

The black matrix layer 201 is formed on the second substrate 200 to correspond to at least the gate line 101, the data line 102, and the TFT, and the black matrix layer 201. A color filter layer 202 is formed on at least a portion of the second substrate 200 corresponding to the pixel area, and the black matrix layer 201 and the color filter layer 202 are stacked on top of each other. Third column spacers 210, 220, and 230 are formed. Meanwhile, in the drawing, the second column spacer 220 is formed to correspond to an area between the gate line 101 and the common line 107. In this case, the second column spacer 220 is common to the gate line 101. The black matrix layer 201 and the color filter layer 202 are formed on the line 107.

In addition, the first column spacer 210 is formed by being disposed so that the upper surface of the first protrusion 135 corresponds to a portion thereof and contacts the bonded portion, and the second column spacer 220 is the second protrusion 110b. The third column spacer 230 is formed to correspond to an upper portion of the remaining gate line 101 on which the first and second protrusions 135 and 110b are not formed. Do it.

Hereinafter, a manufacturing method of the liquid crystal display of the present invention including the first and second protrusions will be described with reference to the drawings.

8A to 8E are cross-sectional views of lines I to I ', II to II', III to III ', and IV to IV' shown in FIG. 6.

In the liquid crystal display of the present invention, first, as shown in FIG. 8A, a first substrate 100 is prepared, and then a first metal material is deposited on the first substrate 100, and then selectively removed to form a gate in one direction. A line 101 and a gate electrode 101a protruding therefrom are formed, and a common line 107 in a direction parallel to the gate line 101 and a common electrode branching from the common line 107 to the pixel region. 107a is formed.

Subsequently, a gate insulating layer 105 is formed on the entire surface of the first substrate 100 including the gate line 101 and the gate electrode 101a.

Subsequently, a semiconductor layer material layer 211 and a second metal material 212 are sequentially deposited on the gate insulating layer 105.

As shown in FIG. 8B, a photosensitive layer 160 is formed on the entire upper surface of the second metal material 212.

Subsequently, the light line 301, the transflective part 302, and the transmissive part 303 are irradiated with light onto the photoresist layer 160, and as shown in FIG. 8C, the data line The forming portion 102 and the first protrusion 135 may have a first height t1, and the forming portion of the second protrusion 110b and the portion between the source electrode 102a and the drain electrode 10b may have a second height. First photosensitive film patterns 160a and 160b having a height t2 <t1 are formed. Here, the mask uses a gray tone mask (GTM) or a diffraction mask in which the transflective portion 302 may be defined. In this case, when the photosensitive film 160 is positive photosensitive, after exposure and development The portion corresponding to the transmissive portion 303 is removed, and when it is negative photosensitive, the portion corresponding to the transmissive portion 303 remains after exposure and development. In the drawing, when the photosensitive film 160 is negative photosensitive, it is shown.

Subsequently, as shown in FIG. 8D, the second metal material 212 and the semiconductor layer material of the portion where the first photoresist pattern 160a and 160b are removed using the first photoresist pattern 160a and 160b as a mask. Selectively removing the layer 211 to form a first protrusion (see 135 in FIG. 8E) and a second protrusion forming portion of the stack of the semiconductor layer material layer 211 and the second metal material 212, and The semiconductor layer material layer 211 and the second metal material 212 are left on the gate insulating layer 105 corresponding to the gate electrode 101a.

Subsequently, as shown in FIG. 8E, the first photoresist layer patterns 160a and 160b are abutted to form the second photoresist layer pattern 160c such that the second height t2 is removed. Here, the second photoresist pattern 160c has a thickness in which the same thickness is removed from the first photoresist patterns 160a and 160b by t1 so that the portion having the first height t1 is reduced to about 't1-t2'. Indicates.

Subsequently, the exposed second metal material 212 is removed using the second photoresist pattern 160c as a mask to form second protrusions 110b and source / drain electrodes 102a and 102b.

Subsequently, the second photoresist layer pattern 160c is removed, and a passivation layer is formed on the entire surface of the second substrate 200 including the first and second protrusions 135 and 110b and the source / drain electrodes 102a and 102b. 7, 106).

Subsequently, a transparent electrode is deposited on the entire surface including the passivation layer 106 and selectively removed to form a pixel electrode (see 103 in FIG. 5) in the pixel region. When the common electrode 107a is formed in the pixel region, the pixel electrode 103 is formed in an alternate shape with the common electrode 107a.

Referring to FIG. 7, the forming process on the second substrate 200 will be described below. A black matrix layer 201 covering at least the gate line and the data line is formed on the second substrate 200, and at least a color filter layer 202 formed corresponding to the pixel areas is formed.

Subsequently, a first column spacer 210 and a second column spacer 220 are formed to correspond to a portion of the first protrusion 135 and the second protrusion 110b, respectively, and correspond to the gate line. The third column spacer 230 is formed. In this case, the first to third column spacers 210, 220, and 230 are formed at the same height. In this case, a surface of the first to third column spacers 210, 220, and 230 that contacts the surface of the second substrate 200 may be formed of a circle or a polygon including a rectangle or a triangle. The first to third column spacers 210, 220, and 230 may be formed of a photosensitive resin or an organic insulating layer.

As such, after forming the thin film transistor array on the first substrate 100 and forming the color filter array on the second substrate 200, the thin film transistor array is formed on the first substrate 100 or the second substrate 200. After the liquid crystal layer is added dropwise, the liquid crystal is not dropped, and a seal pattern (not shown) is formed at the edge of the remaining substrate to bond the first and second substrates 100 and 200.

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

The liquid crystal display of the present invention as described above and a method of manufacturing the same have the following effects.

First, in the structure in which column spacers correspond to structures having different heights among the structures on the first substrate, the remaining structure besides the structure corresponding to the column spacer holding the cell gap (double layer of semiconductor layer and source / drain metal layer) The height of the (single layer of semiconductor layer) is sufficiently low, and in the cemented state, only the cell gap holding column spacer is in contact with the corresponding structure with a small area, thereby stably eliminating the effect of removing touch defects due to the reduction of the friction surface. Can have In particular, even when the gate line is used as the low-resistance metal, the first anti-press column spacer 220 is formed on the gate line and the second anti-release column spacer 230 is formed on the gate line. The intervals between the substrates can be maintained at a predetermined thickness (H1, H2) or more, and are spaced apart from the first and second anti-press column spacers and the opposing substrate even when touched by bonding and a slight external pressure. Can be prevented.

Second, when a strong external pressure is applied to the substrate surface, the first and second non-press column spacers, in addition to the cell gap holding column spacers, touch the corresponding structure of the opposing substrate and share the pressure with each other. The problem of plastic deformation that does not recover to its original state even after the external pressure is released due to the change of the shape of the spacer is prevented.

Claims (34)

A first substrate and a second substrate facing each other; A gate line and a data line crossing each other on the first substrate to define a pixel area; A pixel electrode formed in the pixel area; A gate electrode protruding from the gate line, a semiconductor layer above the gate electrode, a source electrode protruding from the data line on both sides of the semiconductor layer, and a drain electrode spaced apart from the gate line at the intersection of the data line and the data line; A thin film transistor; A first projection on the gate line, the first protrusion comprising a first pattern of the same layer as the semiconductor layer and a second pattern of the same layer as the data line; A second protrusion formed on the first substrate and formed of the same layer as the semiconductor layer; A first column spacer formed on the second substrate such that the first protrusion corresponds to a portion; A second column spacer formed on the second substrate such that the second protrusion corresponds to a portion thereof; And And a liquid crystal layer filled between the first and second substrates. The method of claim 1, And a third column spacer further formed on the gate line on which the first protrusion is not formed on the second substrate. The method of claim 1, And a common line is further formed on the first substrate in a direction parallel to the gate line. The method of claim 3, wherein And the second protrusion is formed in an area between the gate line and the common line. The method of claim 1, And the gate line is formed at a lower height than the semiconductor layer. The method of claim 1, And the gate line is made of a low resistance metal. The method of claim 6, The low resistance metal is any one of copper (Cu), aluminum (Al), gold (Au), silver (Ag), and an alloy thereof. The method of claim 1, The first projection is formed with a thickness of 4000 ~ 7000 Å, the liquid crystal display device. The method of claim 1, And the second protrusion is formed to a thickness of 2000 to 3000 GPa. The method of claim 1, And a gate insulating film is further formed between the gate line and the layers of the first and second protrusions. The method of claim 2, On the second substrate, A black matrix layer covering at least the gate line, the data line and the thin film transistor forming region; And And a color filter layer formed corresponding to at least the pixel areas. The method of claim 11, The first to third column spacers are formed on the black matrix layer. A first substrate and a second substrate facing each other; First to third step portions having first to third heights h1> h2> h3 on the first substrate in sequence; A first column spacer on the second substrate and in contact with the first step portion and a part of the surface; A second column spacer formed on the second substrate to correspond to the second stepped portion and a partial surface; A third column spacer formed on the second substrate so as to correspond to the third stepped portion; And And a liquid crystal layer filled between the first and second substrates. The method of claim 13, And the first stepped portion comprises a semiconductor layer interposed between the first wiring and the second wiring and the first and second wirings. The method of claim 14, And the second stepped portion comprises the semiconductor layer. The method of claim 15, And the second step portion further comprises a second wiring on the semiconductor layer. The method of claim 15, And the third step portion comprises the first wiring. Preparing a first substrate and a second substrate; Forming a gate line and a data line on the first substrate to cross each other to define a pixel area; Forming a pixel electrode in the pixel area; A gate electrode protruding from the gate line, a semiconductor layer above the gate electrode, a source electrode protruding from the data line on both sides of the semiconductor layer, and a drain electrode spaced apart from the gate line at the intersection of the data line and the data line; Forming a thin film transistor; Forming a first protrusion on the gate line, the first protrusion including a first pattern of the same layer as the semiconductor layer and a second pattern of the same layer as the data line; Forming a second protrusion formed of the same layer as the semiconductor layer on the first substrate; Forming a first column spacer and a second column spacer on the second substrate such that the first protrusion and the second protrusion correspond to a portion thereof, respectively; And And forming a liquid crystal layer between the first and second substrates. The method of claim 18, In the forming of the first and second column spacers, And forming a third column spacer corresponding to the gate line on which the first protrusion is not formed on the second substrate. The method of claim 18, In the forming of the gate line, And forming a common line on the first substrate in a direction parallel to the gate line. The method of claim 20, And the second protrusion is formed in a region between the gate line and the common line. The method of claim 19, On the second substrate, Forming a black matrix layer covering at least the gate line, the data line and the thin film transistor forming region; And And forming a color filter layer corresponding to at least the pixel areas. The method of claim 22, The first to third column spacers are formed on the black matrix layer. Preparing a first substrate and a second substrate; Forming a gate line in one direction and a gate electrode protruding therefrom on the first substrate; Forming a data line in a direction crossing the gate line, a source electrode protruding from the data line, and a drain electrode spaced apart from the gate line, and forming a first protrusion of the laminate of the semiconductor layer and the metal layer at a first portion on the gate line; Forming a second protrusion of the semiconductor layer on the first substrate on which the gate line is not formed; Forming a first column spacer and a second column spacer on the second substrate so as to correspond to a portion of the first protrusion and the second protrusion, respectively, and forming a third column spacer to correspond to the gate line; And And forming a liquid crystal layer between the first and second substrates. The method of claim 24, And forming a gate insulating film on the first substrate including the gate line. The method of claim 25, The forming of the data line, the source electrode, the drain electrode, the first protrusion, and the second protrusion may include: Sequentially depositing a semiconductor layer material layer and a metal material layer on the gate insulating film; Forming a photoresist on the entire upper surface of the metal material layer; Irradiating light to the upper portion of the photoresist layer using a mask, the data line and the first protrusion forming portion have a first height t1, and the second protrusion forming portion and a portion between the source electrode and the drain electrode Forming a first photosensitive film pattern having a second height t2 <t1; The metal material layer and the semiconductor layer material layer are selectively removed by using the first photoresist pattern as a mask to form a first protrusion and a second protrusion forming portion, and the metal layer pattern and the semiconductor are formed at the intersection of the gate line and the data line. Forming a layer; Thinning the first photoresist pattern so that the second height is removed to form a second photoresist pattern; And And removing the exposed metal material layer using the second photoresist pattern as a mask to form a second protrusion and a source / drain electrode. The method of claim 26, The mask is a method of manufacturing a liquid crystal display device, characterized in that the diffraction exposure mask. The method of claim 26, And said mask is a halftone mask. The method of claim 24, In the forming of the gate line, And forming a common line on the same layer as the gate line in a direction parallel to the gate line. The method of claim 29, And the second protrusion is formed in a region between the gate line and the common line. The method of claim 24, And the gate line is formed of a low resistance metal. The method of claim 31, wherein The low resistance metal is made of any one of copper (Cu), aluminum (Al), gold (Au), silver (Ag), and alloys thereof. The method of claim 24, On the second substrate, Forming a black matrix layer covering at least said gate line and data line; And Forming a color filter layer formed corresponding to at least the pixel regions. The method of claim 33, The first to third column spacers are formed on the black matrix layer.

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