KR20080029705A - Semiconductor package and stacked semiconductor package having the same - Google Patents

Abstract

A stacked semiconductor package is provided to reduce a thickness and to improve electrical characteristics by connecting directly bumps of stacked semiconductor chips to each other. A chip mounting member includes external connection terminals. A base semiconductor chip(100) is attached on an upper surface of the chip mounting member and includes a plurality of first penetrating type pads. One or more stacked semiconductor chip(200) is stacked on an upper surface of the base semiconductor chip and includes a plurality of second penetrating type pads. A plurality of bumps(300) are arranged between the base semiconductor chip and the stacked semiconductor chip and between the stacked semiconductor chips in order to support the stacked semiconductor chips. A wire(310) is formed to connect electrically the second penetrating type pads with the external connection terminals. A sealing part(320) is formed to cover and protect the base, the stacked semiconductor chip, the wire, and a part of the external connection terminals.

Description

Multilayer Semiconductor Packages {SEMICONDUCTOR PACKAGE AND STACKED SEMICONDUCTOR PACKAGE HAVING THE SAME}

1A and 1B are cross-sectional views illustrating bumps of a semiconductor chip according to the present invention.

FIG. 2A is a cross-sectional view illustrating a process of attaching the base semiconductor chip of FIG. 1B to a die pad. FIG.

2B is a cross-sectional view illustrating a process of forming a first stud bump and a support bump on an upper surface of a base semiconductor chip.

FIG. 2C is a diagram illustrating a stacked semiconductor chip stacked on an upper surface of the base semiconductor chip illustrated in FIG. 2B.

2D is a cross-sectional view illustrating a state in which leads and a stacked semiconductor chip disposed on a top layer are connected by wires.

FIG. 2E is a cross-sectional view of the multilayer semiconductor package formed by forming a seal in FIG. 2D.

The present invention relates to a laminated semiconductor package. More specifically, the present invention stacks a plurality of semiconductor chips in one package and directly connects bumps of the stacked semiconductor chips, thereby doubling memory capacity, reducing thickness, and improving electrical characteristics. It is about.

In recent years, the importance of semiconductor packages is increasing due to the acceleration of high integration of semiconductor devices, increase in memory capacity, multifunctionality, and high density mounting.

One method of satisfying the above-described needs is to stack a plurality of semiconductor chips or semiconductor packages to make one product. Such stacked semiconductor devices are classified into package stacked devices in which several packaged semiconductor devices are stacked, and chip stacked devices in which multiple unpackaged individual semiconductor chips are stacked and packaged.

First, a package stacked device is usually formed by stacking two to eight package devices in a vertical direction, and generally, a thin small outline package (TSOP) type is used as a package stacked device. This is because the electrical connection between the stacked package elements is easy, which is advantageous for the automation process, and the thickness of each package is thin.

However, in the case of forming a package stacked device by stacking two or more conventional TSOP type packages, a process of manufacturing each TSOP type package element and a process of vertically stacking each TSOP type package element are necessarily accompanied. As a result, the time required for manufacturing a package stacked device is long, and the manufacturing process is complicated. For this reason, there exists a problem that the yield of a product falls and a manufacturing cost rises.

In addition, when stacking two to eight package elements of each TSOP type standardized to a certain thickness to form a packaged stacked device, the thickness of the packaged stacked device becomes thicker, which is a limitation in making thinner electronic devices seeking thinning recently. There is a problem acting.

In addition, when two to eight package elements of each TSOP type are stacked, the electrical connection length increases from the lowermost semiconductor package element toward the uppermost semiconductor package element, thereby deteriorating electrical characteristics of the packaged stacked element. The problem arises.

Meanwhile, the chip stacked device includes an external connection terminal, and attaches a first semiconductor chip to a base substrate on which a circuit pattern and connection pads are printed, and a bonding pad and a base substrate arranged on the first semiconductor chip using conductive wires. Connect the connection pads printed on each other. Thereafter, the second semiconductor chip is stacked on the upper surface of the first semiconductor chip, and the bonding pads arranged on the second semiconductor chip and the connection pads formed on the base substrate are connected using conductive wires. The first and second semiconductor chips are then electrically connected by connection pads and respective conductive wires. By the above-described method, at least one semiconductor chip can be further stacked on top of the second semiconductor chip.

As described above, when at least two semiconductor chips are stacked on the upper surface of the base substrate, a chip stacked semiconductor device is formed by wrapping the upper surface of the base substrate including the stacked semiconductor chip and the conductive wire with a molding resin.

The chip stacked device described above has the advantage of having a thinner thickness and a shorter electrical connection length than the package stacked device, thereby providing excellent electrical characteristics. However, since the bonding pads of each semiconductor chip and the connection pads of the base substrate are all connected by conductive wires, According to the position where the chips are stacked and the bonding pads, a time difference of the electrical signal transmission occurs, which makes it difficult to cope with the high-speed response speed.

In addition, when each semiconductor chip is stacked, a die attach process for attaching the base substrate and the semiconductor chip and the semiconductor chips to each other must be performed, and each semiconductor chip and the base substrate are electrically connected using conductive wires. Since the wire bonding process has to proceed, the time required for manufacturing the chip stacked device is long, and the manufacturing process is complicated. For this reason, there exists a problem that the yield of a product falls and a manufacturing cost rises.

In order to improve the above problems of the chip stacked device, an anisotropic conductive ink (ACI) is recently applied between a base substrate and a semiconductor chip, or between stacked semiconductor chips. Then, pressure is applied to each of the semiconductor chips to interconnect the bonding pads of the semiconductor chip and the connection pads of the base substrate and the bonding pads between the stacked semiconductor chips with conductive particle particles included in the ACI.

However, the method of interconnecting the base substrate, the semiconductor chip, and the stacked semiconductor chips using ACI has been recently developed, and is more reliable than the method of connecting the base substrate and the stacked semiconductor chips using conductive wires. Degrades.

Further, since ACI fills the space between the base substrate and the semiconductor chip and between the stacked semiconductor chips, reliability is lowered compared to a molding resin, for example, an epoxy molding compound in which moisture absorption does not occur. In more detail, the epoxy molding compound does not absorb moisture in the atmosphere, while ACI absorbs moisture, and the absorbed moisture vaporizes the heat generated when the chip stacked device operates, causing cracks in the semiconductor chip. Let's do it.

Accordingly, the present invention contemplates such a conventional problem, and an object of the present invention is to stack a plurality of semiconductor chips in one package and directly connect bumps of the stacked semiconductor chips, thereby doubling memory capacity and reducing thickness. In addition, the present invention provides a multilayer semiconductor package having improved electrical characteristics and reliability.

The stacked semiconductor package for realizing the object of the present invention is attached to the chip mounting member having the external connection terminals, the upper surface of the chip mounting member by an adhesive material, is formed from the upper surface to the lower surface so as to be electrically connected and the outer A base semiconductor chip comprising a plurality of first through pads electrically connected to the connection terminals, the base semiconductor chip being stacked on an upper surface of the base semiconductor chip and electrically connected to a position corresponding to the first through pads; At least one stacked semiconductor chip including second through pads formed up to the bottom surface and directly connected to the first through pads, disposed between the base semiconductor chip and the stacked semiconductor chip and between the stacked semiconductor chips Support bumps for supporting chips, and second through pads disposed on an upper surface of a stacked semiconductor chip It includes a seal to protect the wrapped wire and the base and the stacked semiconductor chip, wires, and the external connection terminal portion for electrically connecting the external connection terminal.

For example, the chip mounting member is a lead frame including a die pad to which the base semiconductor chip is attached and leads spaced apart from the die pad and arranged around the die pad and used as external connection terminals, and the lower surface of the die pad is a sealing portion. Exposed to the outside.

Preferably, the first and second penetrating pads may include a first pad protruding from a through hole penetrating from an upper surface to a lower surface of the base semiconductor chip to an upper surface of the base semiconductor chip, and from the through hole. A second pad protruding from the bottom surface, and a connection part disposed in the through hole to electrically connect the first and second pads, and having a second penetration of the base and the stacked semiconductor chips except the stacked semiconductor chip disposed on the uppermost layer. The mold pad includes a second stud bump connected to the first pad to connect the first and second through pads.

Hereinafter, a semiconductor device and a method of manufacturing a stacked semiconductor package using the same according to exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Semiconductor package

2E is a cross-sectional view of a laminated semiconductor package according to the present invention.

Referring to FIG. 2E, the multilayer semiconductor package 1 according to the present invention is stacked on the lead frame 10, the base semiconductor chip 100 attached to the lead frame 10, and the upper surface of the base semiconductor chip 100. The stacked semiconductor chip 200 electrically connected to the base semiconductor chip 100, the support bumps 300 supporting the stacked semiconductor chip 200, the stacked semiconductor chip 200 and the lead frame 10 may be electrically connected. The wire 310 and the base semiconductor chip 100, the multilayer semiconductor chip 200, and the sealing part 320 to protect the wire 310 from an external environment are included.

Hereinafter, the members constituting the multilayer semiconductor package 1 will be described in detail.

The lead frame 10 includes a die pad 20 on which the base semiconductor chip 100 and the multilayer semiconductor chip 200 are mounted, and leads 30 used as external connection terminals of the multilayer semiconductor package 1. The leads 30 are spaced apart from the die pad 20 by a predetermined distance and arranged around the die pad 20. The lead frame 10 described above is arranged in a plurality of mother substrates (not shown), so that the die pads 20 and the leads 30 are not separated from the mother substrate. And the tie bar connects between the leads 30.

The base semiconductor chip 100 is a semiconductor chip directly attached to the upper surface of the die pad 20 by the adhesive member 50, and the first through pads 110 are arranged in a line at the center of the upper surface. The first penetrating pads 110 are a through hole 112 penetrating from an upper surface to a lower surface of the base semiconductor chip 100, and a first protrusion protruding from the through hole 112 to the upper surface of the base semiconductor chip 100. The pad 114, the second pad 116 protruding from the through hole 112 to the lower surface of the base semiconductor chip 100, and the first pad 114 and the second pad 116 are filled with the through hole 112. And a first stud bump 120 formed on an upper surface of the first pad 114 and a connecting portion 115 for electrically connecting the base 115 to the base semiconductor chip 100 and the stacked semiconductor chip 200. do.

The stacked semiconductor chip 200 is a semiconductor chip stacked on the upper surface of the base semiconductor chip 100 and at least one stacked on the base semiconductor chip 100. For example, most preferably, when the thickness of the base 100 and the stacked semiconductor chip 200 is 100 μm, the number of stacked semiconductor chips 200 stacked on the base semiconductor chip 100 is five.

As such, when one base semiconductor chip 100 and five stacked semiconductor chips 200 having a thickness of 100 μm are stacked inside the stacked semiconductor package 1, the overall thickness of the stacked semiconductor package 1 is conventionally standardized. It is equal to the thickness of one TSOP type package element. Therefore, the laminated semiconductor package 1 according to the present invention has a six times increase in the Merimo capacity compared to one conventionally packaged TSOP type package element. In addition, the thickness of the laminated semiconductor package 1 according to the present invention is much thinner than that of a conventional laminated semiconductor package by stacking six TSOP type package elements in a vertical direction. Therefore, the laminated semiconductor package 1 according to the present invention can easily cope with an electronic device requiring large capacity and thickness.

Meanwhile, the second through pads 210 are arranged in a line at the center of the upper surface of the multilayer semiconductor chip 200 described above. The second penetrating pads 210 are penetrating holes 212 penetrating from an upper surface to a lower surface of the stacked semiconductor chip 200, and first penetrating from the penetrating holes 212 to the upper surface of the stacked semiconductor chip 200. The pad 214, the second pad 216 protruding from the through hole 212 to the bottom surface of the stacked semiconductor chip 200, and the first pad 214 and the second pad 216 are filled with the through hole 212. ) And a connecting portion 215 for electrically connecting.

Preferably, the second penetrating pad 210b of the stacked semiconductor chip 200b stacked on the top layer includes only the above-described components, but may be formed between the base semiconductor chip 100 and the stacked semiconductor chip 200b stacked on the top layer. In the case where another stacked semiconductor chip 200a is disposed as shown in FIG. 2E, a second penetrating pad of another stacked semiconductor chip 200a between the base semiconductor chip 100 and the stacked semiconductor chip 200b stacked on the uppermost layer. 210a further includes a second stud bump 220. The second stud bumps 220 are formed on the top surface of the first pad 214 to electrically connect the stacked semiconductor chips 200 stacked thereon.

Preferably, the through holes 112 and 212, the first pads 114 and 214, the second pads 116 and 216, and the connecting portions 115 and 215 are formed in a wafer in which semiconductor chips are arranged in a plurality of columns and rows. The first and second stud bumps 120 and 220 are formed after the base semiconductor chip 100 and the stacked semiconductor chip 200 are stacked on the die pad 20.

The support bump 300 is disposed between the base semiconductor chip 100 and the stacked semiconductor chip 200 and between the stacked semiconductor chips 200 to support the stacked semiconductor chips 200. Preferably, the support bumps 300 are formed together with the first and second stud bumps 120 and 220, and the height is equal to the distance between the semiconductor chip and the semiconductor chip.

The wire 210 electrically connects the base and the stacked semiconductor chips 100 and 200 to the leads 30. One end of the wire 310 is a stacked semiconductor chip disposed on the uppermost layer of the stacked semiconductor chips 200. Bonded to the first pad 212 of 200b, and the other end of the wire 310 is bonded to the lead 30.

The seal 320 seals a portion of the die pad 20, the base semiconductor chip 100 and the stacked semiconductor chips 200 stacked on the die pad 20, the wires 310, and the leads 30. Covered with resins, for example epoxy molding compounds, to protect them from the external environment. Here, the leads 30 positioned inside the seal 320 among the leads 30 become inner leads, and portions exposed to the outside of the seal 320 become outer leads.

Preferably, the lower surface of the die pad 20 is exposed to the outside of the seal 320, which is the base semiconductor chip 100 and the lower surface of the die pad 20 when the stacked semiconductor package 1 is driven. This is for use as a heat sink for rapidly dissipating heat generated in the stacked semiconductor chips 200 to the outside of the stacked semiconductor package 1.

Manufacturing method of semiconductor package

1A to 2E are views for explaining a manufacturing process of the multilayer semiconductor package according to the present invention.

1A and 1B are cross-sectional views illustrating bumps of a semiconductor chip according to the present invention.

As illustrated in FIG. 1A, the semiconductor chip may be formed using a laser beam and an etching method in a portion where the first and second penetrating pads 110 and 210 are to be formed near or at the edge of the base and stacked semiconductor chips 100 and 200. Through holes 112 and 212 penetrating from the upper surface to the lower surface of the 100, 200 are formed. In the present invention, the first and second through pads 110 and 210 are arranged in the center of the base and the stacked semiconductor chips 100 and 20 as an example.

When the through holes 112 and 212 are formed, the first pads protruding from the through holes 112 and 212 to the upper surfaces of the base and stacked semiconductor chips 100 and 200 through electroplating or thin film deposition and patterning processes as shown in FIG. 114, 214, the second pads 116, 216 and the first pads 114, 214, and the second pads 116, 216, which protrude from the through holes 112, 212 to the bottom surfaces of the base and stacked semiconductor chips 100, 200. The connection parts 115 and 215 which connect are formed.

The through holes 112 and 212, the first pads 114 and 214, the second pads 116 and 216, and the connecting portions 115 and 215 are formed in a wafer in which semiconductor chips are arranged in a plurality of columns and rows.

FIG. 2A is a cross-sectional view illustrating a process of attaching the base semiconductor chip of FIG. 1B to a die pad. FIG.

When the base semiconductor chip 100 is completed through the process of FIGS. 1A and 1B, the adhesive member 50 is coated on the upper surface of the die pad 20 of the lead frame 10, and the upper surface of the adhesive member 50 is applied. After placing the base semiconductor chip 100 on the substrate, the base semiconductor chip 100 is attached to the upper surface of the die pad 20 by applying heat and pressure.

2B is a cross-sectional view illustrating a process of forming a first stud bump and a support bump on an upper surface of a base semiconductor chip.

Thereafter, as shown in FIG. 2B, the first stud bump 120 is formed on the first pad 114 of the base semiconductor chip 100 by using a device (not shown) for forming the stud bump, and the base semiconductor chip A support bump 300 is formed near both edges of the upper surface of the 100.

FIG. 2C is a diagram illustrating a stacked semiconductor chip stacked on an upper surface of the base semiconductor chip illustrated in FIG. 2B.

Subsequently, the stacked semiconductor chip 200 is placed on the base semiconductor chip 100, and a predetermined heat and pressure are applied thereto. Then, as shown in FIG. 2C, the first stud bump 120 is directly connected to the second pad 216 of the multilayer semiconductor chip 200, thereby electrically connecting the base semiconductor chip 100 and the multilayer semiconductor chip 200. Shorter connection lengths improve electrical characteristics.

The stacked semiconductor chip 200 is supported by the first stud bump 120 and the support bump 300, and the first stud bump 120 and the support bump 300 formed of gold by heat and pressure may be formed. The molten semiconductor chip 200 is fixed to the base semiconductor chip 100 while melting.

Thereafter, the second stud bump 220 and the support bumps 300 are formed on the upper surface of the multilayer semiconductor chip 200 by the method described with reference to FIG. 2B.

In addition, after the three stacked semiconductor chips 200a are further stacked on the stacked semiconductor chip 200a in the same manner as described with reference to FIG. 2C, the uppermost stacked semiconductor chip ( 200b) is laminated.

2D is a cross-sectional view illustrating a state in which leads and a stacked semiconductor chip disposed on a top layer are connected by wires.

 As shown in FIG. 2D, when the base semiconductor chip and the five stacked semiconductor chips are vertically stacked on the upper surface of the die pad of the lead frame, one end of the wire 310 formed of a conductive material may be disposed among the stacked semiconductor chips 200. The first pad 212 of the stacked semiconductor chip 200b disposed on the uppermost layer is bonded, and the other end of the wire 310 is bonded to the lead 30.

Here, the bumps of the base and stacked semiconductor chips 100 and 200 are directly connected by the first and second stud bumps 120 and 220, and the base and stacked semiconductor chips 100 and 200 are connected by the wire 310 to the leads 30. When electrically connected to the electric field, the time difference of the electric signal transmission hardly occurs, and thus it has a fast response speed.

FIG. 2E is a cross-sectional view of the multilayer semiconductor package formed by forming a seal in FIG. 2D.

When the wire bonding process is completed, as shown in FIG. 2E, the die pad 20, the base semiconductor chip 100 and the stacked semiconductor chips 200 stacked on the die pad 20, the wire 310, and A portion of the leads 30 are covered with a sealing resin, such as epoxy molding compound, to form a seal that protects them from the external environment. At this time, the lower surface of the die pad 20 is not wrapped with a molding resin so that the lower surface of the die pad 20 is exposed to the outside of the molding part 320, which is a heat generated inside the multilayer semiconductor package 1. This is for quickly discharging to the outside of the laminated semiconductor package 1. In addition, the base is filled with an epoxy molding compound that does not absorb moisture between the base temporarily fixed by the first and second stud bumps 120 and 220 and the support bumps 300 and the stacked semiconductor chips 100 and 200. And the stacked semiconductor chips 100 and 200 are completely fixed.

Here, the leads 30 positioned inside the seal 320 among the leads 30 become inner leads, and portions exposed to the outside of the seal 320 become outer leads.

Subsequently, a trimming process of cutting an unnecessary portion of the tie bar (not shown) and the lead frame 100 connecting the die pad 20 and the lead 30 to the mother substrate is performed. In addition, the forming semiconductor package 1 according to the present invention is formed by performing a forming process of bending the external leads exposed to the outside of the encapsulation part 320 in a form that can be easily stacked and mounted.

In order to double the capacity of the laminated semiconductor package 1 manufactured through the above-described process, at least two laminated semiconductor packages 1 according to the present invention are laminated.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

As described in detail above, by stacking a plurality of semiconductor chips in one package and directly connecting bumps of the stacked semiconductor chips, the memory capacity of the stacked semiconductor package may be doubled and the thickness may be reduced.

In addition, direct connection of the bumps of the stacked semiconductor chips improves electrical characteristics by shortening the electrical connection length, and improves reliability of the stacked semiconductor package by filling an epoxy molding compound that does not absorb moisture between the base and the stacked semiconductor chips. Can be.

Claims (8)

A chip mounting member having external connection terminals; A base semiconductor chip attached to an upper surface of the chip mounting member by a adhesive and including a plurality of first through pads formed from an upper surface to a lower surface to be electrically connected to each other and electrically connected to the external connection terminals;  A second through type stacked on an upper surface of the base semiconductor chip and formed from an upper surface to a lower surface so as to be electrically connected to a position corresponding to the first through pads, and directly connected to the first through pads; One or more stacked semiconductor chips including pads; Support bumps disposed between the base semiconductor chip and the stacked semiconductor chip and between the stacked semiconductor chips to support the stacked semiconductor chips; A wire electrically connecting the second through pads and the external connection terminals disposed on an upper surface of the multilayer semiconductor chip; And And a sealing part surrounding and protecting the base and the laminated semiconductor chip, the wire, and a portion of the external connection terminal. The chip mounting member of claim 1, wherein the chip mounting member is a lead frame including a die pad to which the base semiconductor chip is attached, and leads spaced apart from the die pad and arranged around the die pad to be used as the external connection terminals. Laminated semiconductor package. The multilayer semiconductor package of claim 2, wherein a bottom surface of the die pad is exposed to the outside of the sealing part. The semiconductor device of claim 1, wherein the first through-type pad comprises: a first pad protruding from a through hole penetrating from an upper surface to a lower surface of the base semiconductor chip to an upper surface of the base semiconductor chip; A second pad protruding from the bottom surface of the chip, a connection portion disposed in the through hole to electrically connect the first and second pads, and a stud connected to the first pad to connect the first and second through pads; Laminated semiconductor package, characterized in that it comprises a bump. The multilayer semiconductor package of claim 1, wherein the multilayer semiconductor chip is stacked on top of the base semiconductor chip. The second through-type pad of the stacked semiconductor chip disposed on the uppermost layer of the stacked semiconductor chip protrudes from the through hole penetrated from the upper surface to the lower surface of the stacked semiconductor chip to the upper surface of the stacked semiconductor chip. Characterized in that it comprises a first pad, a second pad protruding from the through hole to the bottom surface of the multilayer semiconductor chip, and a connection part disposed in the through hole to electrically connect the first and second pads. Laminated semiconductor package. The multilayer semiconductor package of claim 6, wherein the first pad of the stacked semiconductor chip disposed on the uppermost layer is electrically connected to the external connection terminal by a wire. 7. The second through pad of another stacked semiconductor chip between the base semiconductor chip and the stacked semiconductor chip disposed on the uppermost layer is connected to the first pad to connect the first and second through pads. The laminated semiconductor package further comprises a second stud bump.

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