KR20080009278A - 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동 - Google Patents

다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동 Download PDF

Info

Publication number
KR20080009278A
KR20080009278A KR1020077025576A KR20077025576A KR20080009278A KR 20080009278 A KR20080009278 A KR 20080009278A KR 1020077025576 A KR1020077025576 A KR 1020077025576A KR 20077025576 A KR20077025576 A KR 20077025576A KR 20080009278 A KR20080009278 A KR 20080009278A
Authority
KR
South Korea
Prior art keywords
layer
active layer
memory cell
diode
passive
Prior art date
Application number
KR1020077025576A
Other languages
English (en)
Korean (ko)
Inventor
쥬리 에이치. 키리에게르
스튜아르트 스피트제르
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20080009278A publication Critical patent/KR20080009278A/ko

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1020077025576A 2005-05-02 2006-04-19 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동 KR20080009278A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/119,973 US20060245235A1 (en) 2005-05-02 2005-05-02 Design and operation of a resistance switching memory cell with diode
US11/119,973 2005-05-02

Publications (1)

Publication Number Publication Date
KR20080009278A true KR20080009278A (ko) 2008-01-28

Family

ID=36926316

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077025576A KR20080009278A (ko) 2005-05-02 2006-04-19 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동

Country Status (4)

Country Link
US (1) US20060245235A1 (zh)
KR (1) KR20080009278A (zh)
TW (1) TW200701437A (zh)
WO (1) WO2006118800A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017164689A3 (ko) * 2015-05-19 2018-08-09 제주대학교 산학협력단 스니크 전류 제어 기반 멤리스터 소자 어레이

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004037149B3 (de) * 2004-07-30 2006-05-04 Infineon Technologies Ag Resistiv arbeitender Speicher, Verfahren zu dessen Herstellung sowie Verwendung einer Zusammensetzung als aktive Schicht in einem Speicher
US8193606B2 (en) * 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element
US8036140B2 (en) 2005-04-22 2011-10-11 Microsoft Corporation Application programming interface for inviting participants in a serverless peer to peer network
US7286388B1 (en) * 2005-06-23 2007-10-23 Spansion Llc Resistive memory device with improved data retention
US7307280B1 (en) * 2005-09-16 2007-12-11 Spansion Llc Memory devices with active and passive doped sol-gel layers
WO2007117651A2 (en) * 2006-04-07 2007-10-18 University Of South Florida Passive electric field focus system for in vivo and in vitro applications
KR101390011B1 (ko) * 2006-05-22 2014-04-29 삼성전자주식회사 유기 메모리 소자 및 그의 제조방법
EP1995736A1 (en) * 2007-05-22 2008-11-26 Rijksuniversiteit Groningen Ferro-electric device and modulatable injection barrier
US8071872B2 (en) * 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
US7919973B2 (en) * 2007-06-22 2011-04-05 Microchip Technology Incorporated Method and apparatus for monitoring via's in a semiconductor fab
US7920407B2 (en) * 2008-10-06 2011-04-05 Sandisk 3D, Llc Set and reset detection circuits for reversible resistance switching memory material
GB2470006B (en) * 2009-05-05 2012-05-23 Cambridge Display Tech Ltd Device and method of forming a device
US8586959B2 (en) * 2010-04-28 2013-11-19 Hewlett-Packard Development Company, L.P. Memristive switch device
US8737111B2 (en) 2010-06-18 2014-05-27 Sandisk 3D Llc Memory cell with resistance-switching layers
US8724369B2 (en) 2010-06-18 2014-05-13 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US8520425B2 (en) 2010-06-18 2013-08-27 Sandisk 3D Llc Resistive random access memory with low current operation
JP5708929B2 (ja) 2010-12-13 2015-04-30 ソニー株式会社 記憶素子およびその製造方法、並びに記憶装置
US8879299B2 (en) * 2011-10-17 2014-11-04 Sandisk 3D Llc Non-volatile memory cell containing an in-cell resistor
US9653159B2 (en) 2012-01-18 2017-05-16 Xerox Corporation Memory device based on conductance switching in polymer/electrolyte junctions
US8994014B2 (en) 2012-06-06 2015-03-31 Saudi Basic Industries Corporation Ferroelectric devices, interconnects, and methods of manufacture thereof
US20160043142A1 (en) * 2013-03-21 2016-02-11 Industry-University Cooperation Foundation Hanyang University Two-terminal switching element having bidirectional switching characteristic, resistive memory cross-point array including same, and method for manufacturing two-terminal switching element and cross-point resistive memory array
WO2020226900A2 (en) * 2019-04-23 2020-11-12 Cerium Laboratories Llc Radiation detection systems and methods

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208553B1 (en) * 1999-07-01 2001-03-27 The Regents Of The University Of California High density non-volatile memory device incorporating thiol-derivatized porphyrins
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6753954B2 (en) * 2000-12-06 2004-06-22 Asml Masktools B.V. Method and apparatus for detecting aberrations in a projection lens utilized for projection optics
US7351998B2 (en) * 2001-03-30 2008-04-01 The Penn State Research Foundation Proton or ion movement assisted molecular devices
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6768157B2 (en) * 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
JP2005500682A (ja) * 2001-08-13 2005-01-06 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリセル
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US6753247B1 (en) * 2002-10-31 2004-06-22 Advanced Micro Devices, Inc. Method(s) facilitating formation of memory cell(s) and patterned conductive
US6847047B2 (en) * 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating
US6746971B1 (en) * 2002-12-05 2004-06-08 Advanced Micro Devices, Inc. Method of forming copper sulfide for memory cell
US6770905B1 (en) * 2002-12-05 2004-08-03 Advanced Micro Devices, Inc. Implantation for the formation of CuX layer in an organic memory device
US6686263B1 (en) * 2002-12-09 2004-02-03 Advanced Micro Devices, Inc. Selective formation of top memory electrode by electroless formation of conductive materials
US7482621B2 (en) * 2003-02-03 2009-01-27 The Regents Of The University Of California Rewritable nano-surface organic electrical bistable devices
US6656763B1 (en) * 2003-03-10 2003-12-02 Advanced Micro Devices, Inc. Spin on polymers for organic memory devices
US6825060B1 (en) * 2003-04-02 2004-11-30 Advanced Micro Devices, Inc. Photosensitive polymeric memory elements
US6921912B2 (en) * 2003-06-03 2005-07-26 Micron Technology, Inc. Diode/superionic conductor/polymer memory structure
US6803267B1 (en) * 2003-07-07 2004-10-12 Advanced Micro Devices, Inc. Silicon containing material for patterning polymeric memory element
US6787458B1 (en) * 2003-07-07 2004-09-07 Advanced Micro Devices, Inc. Polymer memory device formed in via opening
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
US6852586B1 (en) * 2003-10-01 2005-02-08 Advanced Micro Devices, Inc. Self assembly of conducting polymer for formation of polymer memory cell
US7157732B2 (en) * 2004-07-01 2007-01-02 Spansion Llc Switchable memory diode-a new memory device
US7141844B1 (en) * 2004-12-01 2006-11-28 Spansion, Llc Selective polymer growth for memory cell fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017164689A3 (ko) * 2015-05-19 2018-08-09 제주대학교 산학협력단 스니크 전류 제어 기반 멤리스터 소자 어레이

Also Published As

Publication number Publication date
TW200701437A (en) 2007-01-01
US20060245235A1 (en) 2006-11-02
WO2006118800A1 (en) 2006-11-09

Similar Documents

Publication Publication Date Title
KR20080009278A (ko) 다이오드를 갖는 저항 스위칭 메모리 셀의 디자인 및 작동
US7981773B2 (en) Switchable memory diode—a new memory device
US7145824B2 (en) Temperature compensation of thin film diode voltage threshold in memory sensing circuit
US7026702B2 (en) Memory device
US7289353B2 (en) Systems and methods for adjusting programming thresholds of polymer memory cells
US7221599B1 (en) Polymer memory cell operation
US7199394B2 (en) Polymer memory device with variable period of retention time
US7259039B2 (en) Memory device and methods of using and making the device
KR101018053B1 (ko) 자기 정렬되는 메모리 소자 및 워드라인
US6960783B2 (en) Erasing and programming an organic memory device and method of fabricating
US7307338B1 (en) Three dimensional polymer memory cell systems
US8710628B2 (en) Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
US7232750B1 (en) Methods involving spin-on polymers that reversibly bind charge carriers
US7344913B1 (en) Spin on memory cell active layer doped with metal ions
US7102156B1 (en) Memory elements using organic active layer

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid