KR20080003089A - Thin film diode liquid crystal display device and method of fabricating the same - Google Patents

Abstract

A thin film diode LCD and a fabrication method thereof are provided to fabricate an array substrate employing a DSD(Dual Select Diode) method through three masks by simultaneously performing patterning of a channel insulating layer, a diode and a data line. A first scan signal line and a second scan signal line are formed on a first substrate. A pixel electrode(330) is formed on the first substrate and has a first contact part(331) and a second contact part(331'). A first thin film diode has a first lead-in electrode(321) and connects the pixel electrode with the first scan signal line, and a second thin film diode has a second lead-in electrode(321') and connects the pixel electrode with the second scan signal line. A data line is formed on the first substrate, and defines a pixel area by crossing the first and second scan signal lines. First and second channel insulating layers are locally formed on the first and second lead-in electrodes and the first and second contact parts. First and second suspension electrodes are formed on the first and second insulating layers, and are patterned in the same shape as the first and second channel insulating layers. A second substrate is bonded with the first substrate.

Description

Thin-Film Diode Liquid Crystal Display and Manufacturing Method Thereof {THIN FILM DIODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

1 is a perspective view schematically showing the structure of a thin film diode liquid crystal display device according to the present invention.

2 is a plan view schematically illustrating a portion of an array substrate of a thin film diode liquid crystal display according to a first embodiment of the present invention;

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along the line II-II ′ of the array substrate shown in FIG. 2.

4A through 4D are cross-sectional views sequentially illustrating a manufacturing process of an array substrate according to a second exemplary embodiment of the present invention.

5 is a plan view schematically illustrating a portion of an array substrate of a thin film diode liquid crystal display according to a third exemplary embodiment of the present invention.

6A to 6C are cross-sectional views sequentially illustrating a manufacturing process along a line VV ′ of the array substrate illustrated in FIG. 5.

7A to 7C are plan views sequentially illustrating a manufacturing process along the line VV ′ of the array substrate illustrated in FIG. 5.

** Explanation of symbols for main parts of drawings **

120,220,320: first scan signal line 120 ', 320': second scan signal line

121,221,321: First Incoming Electrode 121 ', 321': Second Incoming Electrode

130,330: pixel electrodes 131,231,331: first contact portion

131 ', 331': second contact 135,335: branch

140,240,340: first floating electrode 140 ', 340': second floating electrode

150,250,350: first channel insulating film 150 ', 350': second channel insulating film

160,260,360: data line 165,365: branch electrode

The present invention relates to a thin film diode liquid crystal display device using a metal insulator metal (MIM) diode as a switching device, and a method of manufacturing the same. It relates to a manufacturing method.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display (LCD) is a device that displays an image using the optical anisotropy of the liquid crystal, and is excellent in resolution, color display and image quality, and is actively applied to a laptop or a desktop monitor. It is becoming.

The liquid crystal display is largely composed of a color filter substrate as a first substrate, an array substrate as a second substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

In this case, a switching element used in the liquid crystal display device is generally classified into a thin film transistor (TFT) and a thin film diode, and the thin film diode mainly uses a metal insulator metal (MIM) diode.

The liquid crystal display using the MIM diode displays an image by using an electrical nonlinearity of a MIM diode having an insulating film having a thickness of several tens of nanometers between two metal thin films. It has a feature that the structure and the manufacturing process are simple and are manufactured at a lower cost than the thin film transistor. However, when the MIM diode is used as a switching device, a problem arises in contrast ratio or uniformity of image quality due to asymmetry in which voltage applied to polarity is different.

In order to solve this problem, a dual select diode (DSD) method in which two diodes are symmetrically connected to a pixel electrode and a pixel is driven by applying signals having opposite polarities through the two diodes is provided. Developed.

The DSD type liquid crystal display device may improve the uniformity of image quality by uniformly applying signals having opposite polarities to the pixel electrode, and control the gray level uniformly. In addition, the contrast ratio of the image can be improved, and the response speed of the pixel can be improved, and the image can be displayed at high resolution in proximity to the liquid crystal display device using the thin film transistor.

The manufacturing process of the liquid crystal display device as described above basically requires a number of mask processes (ie, photolithography process) for fabricating an array substrate including a thin film diode. There is a need for ways to reduce it.

The photolithography process is a series of processes in which a pattern drawn on a mask is transferred onto a substrate on which a thin film is deposited to form a desired pattern. The photolithography process includes a plurality of processes such as photoresist coating, exposure, and development. As a result, many photolithography processes have many problems such as lowering production yields.

In particular, a mask designed to form a pattern is very expensive, and as the number of masks applied to the process increases, the manufacturing cost of the liquid crystal display device increases in proportion.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a thin film diode liquid crystal display device having a reduced number of masks used for manufacturing an array substrate and a method of manufacturing the same.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, a method of manufacturing a thin film diode liquid crystal display device according to the present invention includes first and second scanning pixels having first and second contact portions and first and second incoming electrodes on a first substrate. Forming a signal line; Patterning a first insulating film to form a first insulating film pattern positioned locally over the pixel electrode and the first and second scan signal lines; Forming a second insulating film and a conductive film on the first substrate; The second insulating film and the conductive film are patterned to include the first and second channel electrodes, the first and second channel insulating films including the second insulating film on the first and second contact portions, and the conductive film. Forming first and second floating electrodes patterned in the same manner as the second channel insulating film; And bonding the first substrate and the second substrate to each other.

In addition, the thin film diode liquid crystal display according to the present invention comprises: first and second scan signal lines formed on the first substrate; A pixel electrode formed on the first substrate and having first and second contacts; A first thin film diode having a first lead electrode and connecting the first scan signal line and the pixel electrode, and a second thin film diode having a second lead electrode and connecting the second scan signal line and the pixel electrode; A data line formed on the first substrate and defining a pixel region crossing the first and second scan signal lines; First and second channel insulating layers locally formed on the first and second lead electrodes and the first and second contact portions; First and second floating electrodes formed on the first and second channel insulating layers and patterned in the same form as the first and second channel insulating layers; And a second substrate bonded to face the first substrate.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a thin film diode liquid crystal display device and a manufacturing method according to the present invention.

1 is a perspective view schematically showing the structure of a thin film diode liquid crystal display according to the present invention.

As shown in the figure, the thin film diode liquid crystal display according to the present invention is the upper color filter substrate 105 and the lower array substrate 110 are bonded to face the lower array substrate 110 and the array substrate 110. And a liquid crystal layer 180 including liquid crystal molecules injected between the upper color filter substrate 105 and horizontally aligned with respect to the substrate 105 and 110 surfaces.

Pixel electrodes 130 corresponding to red, green, and blue pixels are formed in the array substrate 110, and double scan signal lines 120 and 120 transmit signals having opposite polarities to the pixel electrodes 130. ') Is formed, and MIM diodes D1 and D2 are formed as switching elements. In addition, the array substrate 110 forms an electric field for driving liquid crystal molecules, and intersects the double scan signal lines 120 and 120 ′ to define a pixel area, and the data line 160 and the data line 160. The branch electrode 165 'connected to is formed.

The red, green, and blue color filters 107 are sequentially formed on the upper color filter substrate 105 to correspond to the red, green, and blue pixels, respectively.

2 is a plan view schematically illustrating a portion of an array substrate of a thin film diode liquid crystal display according to a first exemplary embodiment of the present invention.

As shown in the drawing, the pixel electrode 130 having the first and second contact portions 131 and 131 ′ and the first and second lead electrodes 121 on the array substrate 110 made of a transparent insulating material such as glass. , 121 ') is formed.

Here, the pixel electrode 130 extends from the pixel electrode line 132 extending in the vertical direction and the pixel electrode line 132 and extends in the horizontal direction and the branch portion 135 extending in the horizontal direction, and the width thereof is wide. It includes an expanded overlap 136.

In addition, the first lead electrode 121 is disposed to be adjacent to the first contact portion 131 at a predetermined interval, and the second lead electrode 121 'is predetermined to the second contact portion 131'. They are arranged adjacent to each other at intervals of.

The pixel electrode 130 and the first and second lead electrodes 121 and 121 ′ may be formed of indium tin oxide (ITO) or indium zinc oxide (IZO). The same transparent conductive material may be formed of an opaque conductive material such as chromium (Cr), aluminum (Al), molybdenum (Mo) and alloys thereof.

First and second channel insulating layers 150 and 150 ′ are formed on the first and second contact electrodes 121 131 and 131 ′, respectively, on the first and second lead electrodes 121 and 131 131. ) Is locally formed.

In addition, first and second floating electrodes 140 and 140 'are formed on the first and second channel insulating layers 150 and 150', respectively. In this case, the first floating electrode 140 intersects with the first lead electrode 121 and the first contact portion 131, and the second floating electrode 140 ′ is the second lead electrode 121 ′. And the second contact portion 131 ′.

The array substrate 110 configured as described above has first and second scan signal lines 120 and 120 ′ extending in a horizontal direction, and the first and second scan signal lines 120 and 120 ′ are respectively formed. It is electrically connected with the said 1st lead electrode 121 and the 2nd lead electrode 121 '.

In this case, an interlayer insulating film (not shown) is entirely formed on the array substrate 110 on the first and second floating electrodes 140 and 140 ', and the data line 160 extends in the vertical direction on the interlayer insulating film. And a branch electrode 165 and a storage electrode 166 connected to the data line 160 and extending in a horizontal direction.

Here, the branch electrodes 165 are alternately arranged side by side with a predetermined distance from the branch portion 135 of the pixel electrode 130. In addition, the storage electrode 166 overlaps a portion of the overlapping portion 136 of the pixel electrode 130 to form a storage capacitor.

In this structure, the first and second lead electrodes 121 and 121 ', the first and second channel insulating layers 150 and 150', the first and second floating electrodes 140 and 140 ', and the first and second electrodes The two contacts 131 and 131 'form two MIM diodes. The MIM diode is applied to the pixel only when a voltage equal to or greater than a threshold voltage is applied through the first and second scan signal lines 120 and 120 '. On the other hand, when no signal is transmitted, the resistance of the MIM diode is large and the voltage delivered to the pixel is stored in the liquid crystal layer and the liquid crystal capacitor until the next driving voltage is applied.

Although not shown in the figure, a black matrix and a color filter are formed on the upper color filter substrate.

A liquid crystal layer (not shown) is formed between the array substrate 110 and the color filter substrate configured as described above, and the liquid crystal molecules of the liquid crystal layer have the branch electrode 165 and the branch portion (without an electric field applied). 135) are arranged side by side. In this case, when a voltage is applied between the pixel electrode 130 and the data line 160 to form an electric field between the branch electrode 165 and the branch part 135, the liquid crystal molecules are affected by a horizontal electric field. It rotates in a direction perpendicular to the 165 and the branch portion 135.

As such, when the liquid crystal molecules operate in a plane parallel to the array substrate 110 and the color filter substrate, the change in retardation (Δnd) that the light undergoes along the path is not large, which is very advantageous for the wide viewing angle. Do. Such a driving type liquid crystal display device can secure a sufficiently wide viewing angle without using a compensation film, has excellent side visibility including color shift, and has a uniform distribution of response speed between gray scales, which is advantageous for displaying moving images. Do.

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along line II-II ′ of the array substrate illustrated in FIG. 2.

As shown in FIG. 3A, an opaque conductive material such as a transparent conductive material or a metal is deposited on a substrate 110 made of an insulating material and selectively contacted by patterning using a photolithography process (first mask process). The scan signal line 120 connected to the pixel electrode and the inlet electrode 121 having the?

In this case, the pixel electrode extends from the pixel electrode line (not shown) extending in the vertical direction and the pixel electrode line and overlaps the branch portion (not shown) extending in the horizontal direction and the width extending in the horizontal direction. Part 136 is included.

In addition, the lead electrode 121 is disposed adjacent to the contact portion 131 at a predetermined interval.

The pixel electrode and the scan signal line 120 may be formed of an opaque conductive material such as chromium, aluminum, molybdenum, and an alloy thereof as well as a transparent conductive material such as indium tin oxide or indium zinc oxide. have.

Subsequently, as illustrated in FIG. 3B, a silicon nitride film (SiNx) is deposited on the entire surface of the substrate 110 and selectively patterned by using a photolithography process (second mask process). A channel insulating layer 150 is formed locally only on the contact portion 131 of the.

Next, as shown in Figure 3c, the channel by depositing aluminum, molybdenum, titanium (Ta), titanium (Ti) or alloys thereof and selectively patterning using a photolithography process (third mask process). The floating electrode 140 is formed on the insulating layer 150.

As shown in FIG. 3D, an inorganic insulating film such as a silicon oxide film or a silicon nitride film or an organic insulating film such as a resin is formed and selectively patterned using a photolithography process (fourth mask process) to scan the scan signal line 120. An interlayer insulating layer 115 having a contact hole (not shown) that exposes a portion connected to an external circuit is formed.

Subsequently, as illustrated in FIG. 3E, the data line 160 crosses the scan signal line 120 on the substrate 110 on which the interlayer insulating layer 115 is formed through a fifth mask process to define a pixel region. Branch electrodes (not shown) and sustain electrodes 166 connected to the data line 160 and extending in a horizontal direction are formed.

Here, the storage electrode 166 overlaps a portion of the overlapping portion 136 of the pixel electrode to form a storage capacitor.

Although not illustrated, the branch electrodes are alternately arranged side by side with a predetermined distance from the branch portion of the pixel electrode.

As described above, in the first exemplary embodiment of the present invention, the array substrate of the thin film diode liquid crystal display device is manufactured through five mask processes, but the array substrate of the thin film diode liquid crystal display device may be manufactured using only a few mask processes. The following second and third embodiments will be described in detail.

4A to 4D are cross-sectional views sequentially illustrating a manufacturing process of an array substrate according to a second exemplary embodiment of the present invention, and show a process of manufacturing an array substrate of a thin film diode liquid crystal display through four mask processes.

At this time, in the method of manufacturing the array substrate of the second embodiment, the order of the third and fourth mask processes are changed in the method of manufacturing the array substrate of the first embodiment, and the floating electrode and the data line are simultaneously operated through the fourth mask process. By patterning, one mask process can be reduced.

As shown in FIG. 4A, an opaque conductive material such as a transparent conductive material or a metal is deposited on a substrate 210 made of an insulating material and selectively patterned by using a photolithography process (first mask process). Scan signal line 220 connected to the pixel electrode and the lead-in electrode 221.

In this case, the pixel electrode extends from the pixel electrode line (not shown) extending in the vertical direction and the pixel electrode line and overlaps the branch portion (not shown) extending in the horizontal direction and the width extending in the horizontal direction. Part 236 is included.

In addition, the lead electrode 221 is disposed adjacent to the contact portion 231 at a predetermined interval.

Subsequently, as illustrated in FIG. 4B, a first silicon nitride film is deposited on the entire surface of the substrate 210 and selectively patterned by using a photolithography process (second mask process) to form the lead electrode 221 and the pixel electrode. A channel insulating layer 250 is formed locally only on the contact portion 231.

Next, as shown in FIG. 4C, the second silicon nitride film is deposited on the entire surface of the substrate 210 and selectively patterned by using a photolithography process (third mask process) to include the overlap part 236. A second insulating layer pattern 215 is formed locally only on the scan signal line 220.

In this case, since the channel insulating film 250 and the second insulating film pattern 215 are formed of a similar first silicon nitride film and a second silicon nitride film, the etch selectivity of the thin film is poor during the patterning of the second silicon nitride film. There is a risk of damage.

As shown in FIG. 4D, aluminum, molybdenum, titanium, titanium, or an alloy thereof is deposited and selectively patterned using a photolithography process (fourth mask process) to float on the channel insulating layer 250. The electrode 240 is formed and connected to the data line 260 and the data line 260 that cross the scan signal line 220 and define the pixel area on the second insulating layer pattern 215, and are in the horizontal direction. Branch electrodes (not shown) and sustain electrodes 266 that extend to each other are formed.

As described above, in the second embodiment of the present invention, an array substrate of a thin film diode liquid crystal display device may be manufactured using only four mask processes.

FIG. 5 is a plan view schematically illustrating a portion of an array substrate of a thin film diode liquid crystal display according to a third exemplary embodiment of the present invention, and shows a pad portion connected to one side of a scan signal line together with a pixel portion.

As shown in the drawing, the pixel electrode 330 having the first and second contact portions 331 and 331 'and the first and second lead electrode 321 on the array substrate 310 made of a transparent insulating material such as glass. 321 ') is formed.

Here, the pixel electrode 330 extends from the pixel electrode line 332 extending in the vertical direction and the pixel electrode line 332 and extends in the horizontal direction, and the branch portion 335 extending in the horizontal direction, and the width thereof is wide. It includes an expanded overlap 336.

In addition, the first lead electrode 321 is disposed adjacent to the first contact portion 331 at a predetermined interval, and the second lead electrode 321 'is predetermined to the second contact portion 331'. They are arranged adjacent to each other at intervals of.

First and second channel insulating layers 350 and 350 'are disposed on the first and second contact electrodes 321 and 331 and on the second and second contact electrodes 321' and 331 ', respectively. ) Is locally formed.

In addition, first and second floating electrodes 340 and 340 'are formed on the first and second channel insulating layers 350 and 350', respectively. In this case, the first floating electrode 340 crosses the first lead electrode 321 and the first contact portion 331, and the second floating electrode 340 ′ is the second lead electrode 321 ′. And the second contact portion 331 '. In addition, the first and second floating electrodes 340 and 340 ′ are patterned in the same form through the same mask process as the first and second channel insulating layers 350 and 350 ′, respectively.

The first and second scan signal lines 320 and 320 ′ extending in the horizontal direction are formed on the array substrate 310 configured as described above, and the first and second scan signal lines 320 and 320 ′ are respectively formed. It is electrically connected with the said 1st lead electrode 321 and the 2nd lead electrode 321 '.

In this case, a first insulating layer pattern 315a is locally formed on the pixel electrode 330 including the overlap 336 and the first and second scan signal lines 320 and 320 ', and the first insulating layer The pattern 315b is connected to the data line 360 and the data line 360 which are patterned in the same shape as the second insulating film pattern 315b and the second insulating film pattern 315b and extend in the vertical direction, and are in the horizontal direction. The branch electrode 365 and the sustain electrode 366 extending in the shape are formed.

The branch electrodes 365 are alternately arranged side by side with a predetermined distance from the branch portion 335 of the pixel electrode 330. In addition, the storage electrode 366 overlaps a portion of the overlapping portion 336 of the pixel electrode 330 to form a storage capacitor.

In this case, first and second pad part wirings 370 connected to an external circuit through first and second contact holes 375 and 375 'on one side of the first and second scan signal lines 320 and 320'. ) Is connected.

Here, the branch electrode 365, the sustain electrode 366, and the data line 360 are formed of the same conductive material through the same mask process as the first and second floating electrodes 340 and 340 ′, thereby reducing the number of masks. It can be reduced, which will be described in detail through the manufacturing process of the following array substrate.

6A through 6C are cross-sectional views sequentially illustrating a manufacturing process along the line VV ′ of the array substrate illustrated in FIG. 5, and FIGS. 7A through 7C illustrate VV ′ of the array substrate illustrated in FIG. 5. It is a top view which shows the manufacturing process along a line sequentially.

As shown in FIGS. 6A and 7A, an opaque conductive material such as a transparent conductive material or a metal is deposited on a substrate 310 made of an insulating material and selectively patterned by using a photolithography process (first mask process). The pixel electrode 330 having the first and second contact portions 331 and 331 'and the first and second scan signal lines 320 and 320' connected to the first and second lead electrodes 321 and 321 'are formed. do.

In this case, the pixel electrode 330 extends from the pixel electrode line 332 extending in the vertical direction and the pixel electrode line 332 and extends in the horizontal direction, and the branch portion 335 extending in the horizontal direction, and the width thereof is wide. It includes an expanded overlap 336.

In addition, the first and second lead electrodes 321 and 321 'are disposed adjacent to the first and second contact portions 331 and 331' at predetermined intervals, respectively.

In addition, one side of each of the first and second scan signal lines 320 and 320 'may be connected to an external circuit to transfer scan signals to the first and second scan signal lines 320 and 320'. Second pad part wirings 370 and 370 are formed.

The pixel electrode 330, the first and second scan signal lines 320 and 320 ′, and the first and second pad part wirings 370 and 370 may be formed of indium tin oxide or indium zinc oxide. The same transparent conductive material may of course be formed of opaque conductive materials such as chromium, aluminum, molybdenum and alloys thereof.

6B and 7B, a first insulating film such as a silicon nitride film is deposited on the entire surface of the substrate 310 and selectively patterned by using a photolithography process (second mask process). A first insulating layer pattern 315a is formed locally on only the pixel electrode 330 including 336 and the first and second scan signal lines 320 and 320 '. In this case, the pad part insulating layer pattern exposing a part of the first and second pad part wirings 370 and 370 on the first and second pad part wirings 370 and 370 through the second mask process. 315a ') is formed.

Next, as illustrated in FIGS. 6C and 7C, a second insulating film such as a silicon nitride film is deposited, and then a conductive film such as aluminum, molybdenum, tantalum (Ta), titanium (Ti), or an alloy thereof is deposited. By selectively patterning using a photolithography process (third mask process), the second insulating film is formed on the first and second inlet electrodes 321 and 321 'and the first and second contact portions 331 and 331'. The first and second floating electrodes 340 formed of the first and second channel insulating layers 350 and 350 'and the conductive layer and patterned in the same shape as the first and second channel insulating layers 350 and 350'. 340 ').

The second insulating film pattern 315b and the conductive film are formed on the first insulating film pattern 315b through the third mask process and have the same shape as that of the second insulating film pattern 315b. A branched electrode 365 and a storage electrode 366 connected to the patterned data line 360 and the data line 360 and extending in the horizontal direction are formed. In this case, the etching of the second insulating layer should proceed until a portion of the first and second pad part wirings 370 and 370 are exposed.

As described above, in the third exemplary embodiment of the present invention, the array substrate of the thin film diode liquid crystal display device may be manufactured using only three mask processes.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

As described above, the thin film diode liquid crystal display device and the method of manufacturing the same according to the present invention provide the effect of reducing the number of masks used for manufacturing the array substrate and reducing the manufacturing process and cost.

In addition, the thin film diode liquid crystal display according to the present invention and a manufacturing method thereof are expected to improve yield as the process is simplified, and the effect of reducing the initial investment cost is expected.

Claims (15)

First and second scan signal lines formed on the first substrate; A pixel electrode formed on the first substrate and having first and second contacts; A first thin film diode having a first lead electrode and connecting the first scan signal line and the pixel electrode, and a second thin film diode having a second lead electrode and connecting the second scan signal line and the pixel electrode; A data line formed on the first substrate and defining a pixel region crossing the first and second scan signal lines; First and second channel insulating layers locally formed on the first and second lead electrodes and the first and second contact portions; First and second floating electrodes formed on the first and second channel insulating layers and patterned in the same form as the first and second channel insulating layers; And A thin film diode liquid crystal display comprising a second substrate bonded to and opposed to the first substrate. The pixel electrode of claim 1, wherein the pixel electrode includes a pixel electrode line extending in a first direction, a branch extending in a second direction from the pixel electrode line, and an overlapping portion extending in the second direction and extending in width. Thin-film diode liquid crystal display device characterized in that. The thin film diode liquid crystal display of claim 1, wherein the first and second contacts and the data line are made of the same conductive material. The thin film diode liquid crystal display device of claim 2, further comprising a storage electrode connected to the data line and extending in the second direction and overlapping the overlapping portion to form a storage capacitor. The thin film diode liquid crystal display of claim 2, further comprising a pixel electrode including the overlapping portion and a first insulating layer pattern locally formed on the first and second scan signal lines. 6. The thin film diode liquid crystal display of claim 5, further comprising a second insulating film pattern formed on the first insulating film pattern and patterned in the same shape as the data line. 7. The thin film diode liquid crystal display of claim 6, wherein the first and second channel insulating layers and the second insulating layer pattern are made of the same insulating material. Forming first and second scan signal lines having pixel electrodes having first and second contacts and first and second lead electrodes on the first substrate; Patterning a first insulating film to form a first insulating film pattern positioned locally over the pixel electrode and the first and second scan signal lines; Forming a second insulating film and a conductive film on the first substrate; The second insulating film and the conductive film are patterned to include the first and second channel electrodes, the first and second channel insulating films including the second insulating film on the first and second contact portions, and the conductive film. Forming first and second floating electrodes patterned in the same manner as the second channel insulating film; And And bonding the first substrate and the second substrate to each other. 10. The display device of claim 8, wherein the pixel electrode includes a pixel electrode line extending in a first direction, a branch portion extending in a second direction from the pixel electrode line, and an overlapping portion extending in the second direction and extending in width in the second direction. A method of manufacturing a thin film diode liquid crystal display, characterized in that. The method of claim 8, wherein the first and second lead electrodes are disposed to be adjacent to the first and second contact portions at predetermined intervals, respectively. The first and second pad part wirings of claim 8, wherein the first and second pad part wirings are formed on one side of each of the first and second scan signal lines, and connected to an external circuit to transfer the scan signals to the first and second scan signal lines. Method of manufacturing a thin film diode liquid crystal display device further comprising the step of forming a. 12. The method of claim 11, further comprising: forming a pad insulating layer pattern on the first and second pad portion wirings by patterning the first insulating layer, and exposing a part of the first and second pad portion wirings. Method of manufacturing a thin film diode liquid crystal display device comprising a. The method of claim 12, wherein the second insulating layer is patterned to expose a part of the first and second pad part wirings. The data of claim 8, wherein the second insulating film and the conductive film are patterned to form a second insulating film pattern including the second insulating film and the conductive film on the first insulating film pattern and patterned in the same form as the second insulating film pattern. A method of manufacturing a thin film diode liquid crystal display further comprising the step of forming a line. 15. The method of claim 14, wherein the data line comprises a branch electrode and a sustain electrode connected to the data line and extending in a first direction.

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