KR20070106818A - 실리콘 태양전지의 선택적 에미터의 제조방법 - Google Patents
실리콘 태양전지의 선택적 에미터의 제조방법 Download PDFInfo
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- KR20070106818A KR20070106818A KR1020060039132A KR20060039132A KR20070106818A KR 20070106818 A KR20070106818 A KR 20070106818A KR 1020060039132 A KR1020060039132 A KR 1020060039132A KR 20060039132 A KR20060039132 A KR 20060039132A KR 20070106818 A KR20070106818 A KR 20070106818A
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- Prior art keywords
- oxide film
- silicon
- silicon wafer
- impurity region
- solar cell
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 230000008569 process Effects 0.000 title claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 239000012535 impurity Substances 0.000 claims abstract description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 32
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000313 electron-beam-induced deposition Methods 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000002513 implantation Methods 0.000 abstract description 9
- 238000000206 photolithography Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 60
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
- 실리콘 웨이퍼의 전면부에 전극이 형성될 고농도 불순물 영역과 그 외의 저농도 불순물 영역으로 이루어진 선택적 에미터를 형성하는 방법으로서,(a) 쉐도우 마스크를 사용하여 화학 기상 증착, 스퍼터 증착 또는 전자빔 증착 공정에 의해 패턴화된 얇은 실리콘 산화막을 형성하는 과정; 및(b) 불순물의 열확산에 의해, 산화막이 없는 노출 부위에는 고농도의 불순물 영역을 형성하고, 산화막이 도포된 부위에는 불순물이 상기 산화막을 부분적으로 통과하여 상대적으로 저농도의 불순물 영역을 형성하는 과정;을 포함하는 것으로 구성되어 있는 제조방법.
- 제 1 항에 있어서, 상기 과정(a)의 실리콘 웨이퍼는 p형 불순물이 도핑된 실리콘 웨이퍼인 것을 특징으로 하는 제조방법.
- 제 1 항에 있어서, 상기 쉐도우 마스크는 전면전극층이 형성될 위치에 대응하는 실리콘 웨이퍼의 고농도 불순물 영역과 대략 일치하는 다수의 격막과 이들 사이의 개구들로 이루어진 것을 특징으로 하는 제조방법.
- 제 1 항에 있어서, 상기 실리콘 산화막은 200 내지 2000 Å의 두께로 형성되는 것을 특징으로 하는 제조방법.
- 제 1 항에 있어서, 상기 화학 기상 증착 공정은 플라즈마 강화 화학 기상 증착(Plasma Enhanced Chemical Vapor Deposition: PECVD) 공정인 것을 특징으로 하는 제조방법.
- 제 1 항에 있어서, 상기 과정(b)의 불순물 열확산 공정은 820 내지 950℃의 온도에서 30 내지 180 분간 수행하는 것을 특징으로 하는 제조방법.
- 제 1 항 내지 제 6 항 중 어느 하나에 따른 방법으로 제조된 선택적 에미터를 포함하는 것으로 구성된 실리콘 태양전지 모듈.
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KR1020060039132A KR100877821B1 (ko) | 2006-05-01 | 2006-05-01 | 실리콘 태양전지의 선택적 에미터의 제조방법 |
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KR1020060039132A KR100877821B1 (ko) | 2006-05-01 | 2006-05-01 | 실리콘 태양전지의 선택적 에미터의 제조방법 |
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KR20070106818A true KR20070106818A (ko) | 2007-11-06 |
KR100877821B1 KR100877821B1 (ko) | 2009-01-12 |
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KR1020060039132A KR100877821B1 (ko) | 2006-05-01 | 2006-05-01 | 실리콘 태양전지의 선택적 에미터의 제조방법 |
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100974221B1 (ko) * | 2008-04-17 | 2010-08-06 | 엘지전자 주식회사 | 레이저 어닐링을 이용한 태양전지의 선택적 에미터형성방법 및 이를 이용한 태양전지의 제조방법 |
KR101037316B1 (ko) * | 2010-09-30 | 2011-05-26 | (유)에스엔티 | 태양전지의 선택적 에미터 형성장치 |
KR101104606B1 (ko) * | 2008-02-19 | 2012-01-12 | 주식회사 엘지화학 | 태양전지용 선택적 에미터의 제조방법 및 그에 사용되는마스크 패턴 제조용 페이스트. |
CN101800261B (zh) * | 2009-02-05 | 2012-04-18 | Snt能源技术有限公司 | 制备太阳能电池上的选择性发射极的方法及其中使用的扩散设备 |
KR101145928B1 (ko) * | 2009-03-11 | 2012-05-15 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
CN102456765A (zh) * | 2010-10-14 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 选择性发射极电池的制作方法 |
KR101150686B1 (ko) * | 2010-12-17 | 2012-05-25 | 현대중공업 주식회사 | 태양전지 및 그 제조방법 |
KR101161810B1 (ko) * | 2009-08-21 | 2012-07-03 | 주식회사 효성 | 태양전지의 선택적 에미터 형성방법 및 그 태양전지 제조방법 |
WO2013119574A1 (en) * | 2012-02-06 | 2013-08-15 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
WO2013089879A3 (en) * | 2011-09-30 | 2013-10-03 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
KR101370126B1 (ko) * | 2008-02-25 | 2014-03-04 | 엘지전자 주식회사 | 탑햇 형태의 레이저 어닐링을 이용한 태양전지의 선택적에미터 형성방법 및 이를 이용한 태양전지의 제조방법 |
US8992803B2 (en) | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
US9018033B2 (en) | 2011-09-30 | 2015-04-28 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
US9401446B2 (en) | 2008-11-04 | 2016-07-26 | Lg Electronics Inc. | Silicon solar cell and method of manufacturing the same |
US9960287B2 (en) | 2014-02-11 | 2018-05-01 | Picasolar, Inc. | Solar cells and methods of fabrication thereof |
Families Citing this family (2)
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KR101120099B1 (ko) | 2009-11-18 | 2012-03-22 | 주식회사 효성 | 선택적 에미터 형성 방법 및 그 태양전지 제조방법 |
KR101724005B1 (ko) | 2011-04-29 | 2017-04-07 | 삼성에스디아이 주식회사 | 태양전지와 그 제조 방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5951756B2 (ja) | 1979-05-29 | 1984-12-15 | 松下電器産業株式会社 | 太陽電池の製造方法 |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101104606B1 (ko) * | 2008-02-19 | 2012-01-12 | 주식회사 엘지화학 | 태양전지용 선택적 에미터의 제조방법 및 그에 사용되는마스크 패턴 제조용 페이스트. |
KR101370126B1 (ko) * | 2008-02-25 | 2014-03-04 | 엘지전자 주식회사 | 탑햇 형태의 레이저 어닐링을 이용한 태양전지의 선택적에미터 형성방법 및 이를 이용한 태양전지의 제조방법 |
KR100974221B1 (ko) * | 2008-04-17 | 2010-08-06 | 엘지전자 주식회사 | 레이저 어닐링을 이용한 태양전지의 선택적 에미터형성방법 및 이를 이용한 태양전지의 제조방법 |
US8513754B2 (en) | 2008-04-17 | 2013-08-20 | Lg Electronics Inc. | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell |
US9401446B2 (en) | 2008-11-04 | 2016-07-26 | Lg Electronics Inc. | Silicon solar cell and method of manufacturing the same |
CN101800261B (zh) * | 2009-02-05 | 2012-04-18 | Snt能源技术有限公司 | 制备太阳能电池上的选择性发射极的方法及其中使用的扩散设备 |
KR101145928B1 (ko) * | 2009-03-11 | 2012-05-15 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
KR101161810B1 (ko) * | 2009-08-21 | 2012-07-03 | 주식회사 효성 | 태양전지의 선택적 에미터 형성방법 및 그 태양전지 제조방법 |
CN102447004A (zh) * | 2010-09-30 | 2012-05-09 | Snt能源技术有限公司 | 形成太阳能电池的选择性发射极的掩模、方法和设备 |
KR101037316B1 (ko) * | 2010-09-30 | 2011-05-26 | (유)에스엔티 | 태양전지의 선택적 에미터 형성장치 |
CN102456765A (zh) * | 2010-10-14 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 选择性发射极电池的制作方法 |
KR101150686B1 (ko) * | 2010-12-17 | 2012-05-25 | 현대중공업 주식회사 | 태양전지 및 그 제조방법 |
WO2013089879A3 (en) * | 2011-09-30 | 2013-10-03 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
US8992803B2 (en) | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
US9018033B2 (en) | 2011-09-30 | 2015-04-28 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
US9559228B2 (en) | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
US9799783B2 (en) | 2011-09-30 | 2017-10-24 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
WO2013119574A1 (en) * | 2012-02-06 | 2013-08-15 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
US9960287B2 (en) | 2014-02-11 | 2018-05-01 | Picasolar, Inc. | Solar cells and methods of fabrication thereof |
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