KR20070098090A - Vertically mounting type memory module having semiconductor device that is vertically mounted through the module substrate - Google Patents

Abstract

A vertical mounting type memory module having a semiconductor device vertically penetrating through the module substrate is provided to increase the mounting density of the semiconductor device without laminating the semiconductor device. A vertical mounting type memory module(100) includes a module substrate(20) with through holes for vertically mounting semiconductor chips(11) through the module substrate(20) respectively. A plurality of contact pads(15) are formed on a side of the semiconductor chip(11). A plurality of substrate pads(22) are formed around the through hole on the module substrate. The contact pads(15) of the semiconductor and the substrate pads(22) of the module substrate(20) is one-to-one connected electrically by using the solder(31).

Description

VERTICALLY MOUNTING TYPE MEMORY MODULE HAVING SEMICONDUCTOR DEVICE THAT IS VERTICALLY MOUNTED THROUGH THE MODULE SUBSTRATE}

1 is a perspective view showing a memory module according to the prior art.

2A and 2B are perspective views illustrating a semiconductor chip and a module substrate of the memory module according to the first embodiment of the present invention, and a cross-sectional view illustrating the memory module;

3A and 3B are perspective views illustrating a semiconductor chip, a module substrate, and a memory module of the memory module according to the second embodiment of the present invention;

4 is a cross-sectional view illustrating a memory module according to a third embodiment of the present invention.

5A and 5B are a perspective view and a cross-sectional view of a semiconductor chip and a memory module of the memory module according to the fourth embodiment of the present invention.

6A and 6B are perspective views illustrating a semiconductor chip, a module substrate, and a memory module of a memory module according to a fifth embodiment of the present invention;

7 is a sectional view showing a memory module according to a sixth embodiment of the present invention.

8 is a sectional view showing a memory module according to a seventh embodiment of the present invention.

* Description of symbols on the main parts of the drawings *

100,200,300,400,500,600,700; Vertical Mount Memory Modules

800; Memory module 11,311; Semiconductor chip

411,511; Dual stack chip 612,813,814; Semiconductor chip package

712,812; Dual stack package 13; side wall

15,315; Connection pad 17; Attachment surface

18,318; Adhesive 19; Pocket protective lid

20,820; Module substrate 21; Through hole

22; Substrate pad 23; External connection pattern

31,831; Solder 32,332; Bonding wire

312; Resin encapsulation unit 320; Wiring board

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a vertically mounted memory module capable of increasing the capacity of a module and increasing the mounting density of a semiconductor device.

Memory modules are commonly used to increase the capacity of semiconductor devices or when a family of products for a particular purpose is needed. A memory module is useful for mounting a plurality of semiconductor devices on a single module substrate, because the memory capacity can be easily increased at the module level through an assembly process instead of increasing the memory capacity at the chip or package level. Is used.

The module substrate is internationally standardized by the Joint Electron Device Engineering Council (JEDEC). Therefore, there is a limit in increasing the capacity of the memory module due to the planar arrangement of the semiconductor elements. As a solution to this problem, a memory module having a plurality of stacked semiconductor devices has been proposed.

1 is a perspective view showing a memory module according to the prior art.

The memory module 800 illustrated in FIG. 1 has a structure in which dual stack packages 812 in which two semiconductor chip packages 813 and 814 are vertically stacked on one surface of a module substrate 820 are mounted. Each dual stack package 812 is electrically interconnected and physically stacked between the semiconductor chip packages 813 and 814 by solder balls 831. Each of the dual stack packages 812 is electrically connected to the module substrate 820 by solder balls 831 of the lower semiconductor chip packages 814.

As described above, the conventional memory module stacks semiconductor devices vertically to increase the number of semiconductor devices mounted on the module substrate, thereby overcoming the limit of capacity increase of the memory module due to the planar arrangement of the semiconductor devices. However, in view of reliability and structural stability, there is a limit to the number of stackable semiconductor devices, and the capacity increase is limited because the semiconductor device is basically a planar layout structure.

In addition, there is a problem that the entire manufacturing process is complicated because the manufacturing process through the stacking and interconnection of the semiconductor devices and the inspection thereof, a defect may occur in the stacking process. For example, in the case of a memory module in which stack packages are mounted, first manufacturing individual semiconductor chip packages, inspecting whether the semiconductor chip packages are good or bad, stacking good semiconductor chip packages and manufacturing the stack packages It is manufactured through a complicated process such as checking the quality / failure of the electrical / physical connection state between the stacked individual semiconductor chip packages, and mounting the good stack packages on the module substrate. Defects may occur in the electrical connection between the two.

Accordingly, an object of the present invention is to provide a memory module capable of increasing the capacity of a module and the mounting density of a semiconductor device without a problem of defects that may occur in the lamination process.

Another object of the present invention is to provide a memory module capable of increasing the capacity of the module and the mounting density of the semiconductor device by a simpler manufacturing process than the prior art.

In order to achieve the above object, the present invention provides a semiconductor device comprising at least one semiconductor device having connection pads formed thereon; And through-holes formed so that the semiconductor elements are respectively penetrated and mounted, substrate pads formed in one-to-one correspondence with the connection pads on a surface and a neighboring surface of the semiconductor element where the connection pads are formed around the through-holes; And a module substrate having a formed external connection pattern, wherein semiconductor elements are vertically penetrated through the through holes of the module substrate, respectively, and connection pads are formed in areas exposed from the module substrate on at least one surface of the semiconductor element. Means provide a vertically mounted memory module in which the connection pads and the substrate pads are electrically connected one-to-one by means.

In the vertically mounted memory module according to the present invention, it is preferable that the connection pads are formed at both sides with respect to a region located in the through hole of the module substrate on the surface of the semiconductor element on which the connection pads are formed.

In the vertically mounted memory module according to the present invention, the semiconductor device may be at least one of a semiconductor chip or a semiconductor chip package, and in the case where the semiconductor device is a semiconductor chip, the semiconductor chips may be covered with surfaces other than a surface on which a connection pad is formed. Each of the pocket-shaped protection leads may be inserted so as to vertically penetrate through the through-holes of the module substrate.

In the vertically mounted memory module according to the present invention, the semiconductor element is a dual semiconductor element having two semiconductor elements formed on one surface thereof with a connection pad attached thereto, and the dual semiconductor elements are attached to the back surfaces of the surface on which the connection pad is formed. The dual semiconductor device may be attached to the back surfaces of the dual semiconductor device through at least one of a pocket-type protective lead in which two pockets in which two semiconductor devices are fitted are integrally formed so as to cover the surfaces except the surface on which the connection pads are formed. .

In the vertically mounted memory module according to the present invention, the connection means may be at least one of solder or bonding wire. In the case where the connecting means is solder, the connection pads are preferably formed in a region close to the module substrate on one surface of the semiconductor element, and the substrate pads are formed in a region close to the semiconductor element on the surface of the module substrate.

In the vertically mounted memory module according to the present invention, the through hole may be formed in at least one of a long side direction and a short side direction of the module substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the accompanying drawings, some of the components are somewhat exaggerated, schematically illustrated or omitted to facilitate a clear understanding of the drawings, and the actual size of each component is not entirely reflected.

First embodiment

2A and 2B are perspective views illustrating a semiconductor chip and a module substrate of the memory module according to the first embodiment of the present invention, and sectional views showing the memory module.

2A and 2B, the memory module 100 according to the present exemplary embodiment is characterized in that semiconductor devices, for example, semiconductor chips 11 are vertically penetrated through the module substrate 20.

Through holes 21 are formed in the module substrate 20 so that the semiconductor chips 11 may be penetrated and mounted. The through hole 21 may be formed of various instruments such as a power drill, a punch, a laser drill, and the like. In addition, the through hole 21 may be formed in any one direction of a long side or a short side of the module substrate 20.

A plurality of connection pads 15 are formed on one surface of the semiconductor chip 11. The connection pad 15 of the semiconductor chip 11 is an area exposed from the module substrate 20 when the semiconductor chip 11 is mounted through the through hole 21 of the module substrate 20, for example, the semiconductor chip 11. On one side of the) is formed on both sides with respect to the region located in the through hole 21 of the module substrate 20.

A plurality of substrate pads 22 are formed around the through holes 21 of the module substrate 20. The substrate pads 22 are formed in one-to-one correspondence with the connection pads 15 on the surface of the semiconductor substrate 11 on which the connection pads 15 are formed and on the surface of the module substrate 20 neighboring thereto. Reference numeral 23 is an external connection pattern for electrically connecting the semiconductor chip 11 to the outside.

The connection pads 15 of the semiconductor chips 11 and the substrate pads 22 of the module substrate 20 are electrically connected one-to-one by a connecting means, for example, a solder 31. The solder 31 is formed using a method such as laser jetting in which vacuum is applied and laser is applied to jet the solder.

As described above, the memory module 100 according to the present exemplary embodiment is mounted with the semiconductor chips 11 penetrating perpendicularly to the through holes 21 of the module substrate 20, respectively. Electrical connection of the module substrate 20 is made by solder 31. The connection pads 15 are formed on both sides of the region located in the through-hole 21 of the semiconductor chip 11, particularly in regions close to the module substrate 20, and formed on the module substrate 20. 22 is also preferably formed in a region close to the semiconductor chip 11. The reason for this is that it is easy to attach the solder 31 to the connection pads 15 formed on the semiconductor chip 11 and the substrate pad 22 formed on the module substrate 20, and the amount of the solder 31 used is changed. Because it can be reduced.

Unlike the related art, the semiconductor chips 11 are mounted perpendicular to the module substrate 20. Accordingly, the semiconductor chips 11 are mounted using a means such as a jig (not shown) capable of supporting the semiconductor chips 11 and the module substrate 20, and the semiconductor chips 11 and the module. The substrate 20 is bonded to the solder 31.

In the vertically mounted memory module according to the present embodiment, semiconductor chips are vertically penetrated through through holes formed in a module substrate. Therefore, the area in which the semiconductor device is mounted in the module substrate is reduced, so that the capacity of the module and the mounting density of the semiconductor device can be increased in the limited module substrate without stacking individual semiconductor chips. And problems that could arise due to lamination are solved. In addition, although the semiconductor devices are mounted perpendicular to the module substrate, the semiconductor devices have a region located in the through hole of the module substrate, and thus do not significantly affect the height of the memory module.

In addition, a semiconductor element is not limited to the semiconductor chip mentioned above. An example is described in the following example.

Second embodiment

3A and 3B are perspective views illustrating a semiconductor chip, a module substrate, and a memory module of the memory module according to the second embodiment of the present invention. In the present embodiment, the same components as those of the first embodiment or corresponding components use the same reference numerals, and a description thereof will be omitted.

3A and 3B, the memory module 200 according to the present exemplary embodiment has a similar basic configuration and function to the memory module of the first exemplary embodiment described above, but the semiconductor chip 11 has a pocket type protective lid ( It is characterized by being in the form of 16).

The pocket type protection lead 16 is a pocket in which the semiconductor chip 11 can be fitted, and the attachment surface 17 and the attachment surface 17 are attached to the back surface of the surface on which the connection pad 15 of the semiconductor chip 11 is formed. ) And four sidewalls (13) formed surrounding the edges. The surface on which the connection pad 15 is formed is exposed on the semiconductor chip 11 inserted in the pocket protective lead 16, and the surfaces except for the surface are attached to the pocket protective lead 16. The four sidewalls 13 are attached to four surfaces in the thickness direction of the semiconductor chip 11. The surfaces of the semiconductor chip 11 attached to the pocketed protective leads 16 are protected from the external environment. Here, the adhesive surface (not shown) is interposed in the attachment surface 17, and the semiconductor chip 11 is fixed without being separated from the pocket type protection lead 16.

The sidewall 13 of the pocket protective lead 16 is preferably equal to the thickness of the semiconductor chip 11. The reason is that when the thickness of the semiconductor chip 11 is higher than the sidewall 13, the surface exposed from the sidewall 13 cannot be protected from the external environment. In addition, when the thickness of the semiconductor chip 11 is low, when the connection pad 15 and the substrate pad 22 are electrically connected by using a connection means, the amount of solder is increased during solder bonding, and at the time of wire bonding. This is because bonding is not easy due to problems such as length of the bonding wire.

The pocket protective lead 16 may be formed of a metal coated with a nonconductive material such as a polymer, or may be formed of a nonconductive material such as a plastic. The pocket type protective lead 16 formed of a metal coated with a polymer is preferable to that formed of plastic because of its heat release effect.

The semiconductor chips 11 fitted in the pocket protection leads 16 are respectively vertically penetrated through the through holes 21 of the module substrate 20. The connection pads 15 of the semiconductor chip 11 and the substrate pads 22 of the module substrate 20 are electrically connected one-to-one through a connecting means, for example, a solder 31.

On the other hand, the connecting means is not limited to the solder of the above-described embodiments. An example is described in the following example.

Third embodiment

4 is a cross-sectional view illustrating a memory module according to a third exemplary embodiment of the present invention. In the present embodiment, the same components or corresponding components as the above-described embodiments have the same reference numerals, and description thereof will be omitted.

Referring to FIG. 4, the memory module 300 according to the present exemplary embodiment has a similar basic configuration and function to the memory module of the above-described embodiments, but is characterized in that the connecting means is a bonding wire 32. Although the structure in which the semiconductor chip 11 as shown in the first embodiment described above is mounted on the module substrate 20 is shown, it is not limited to this configuration, and the pocket type protective lead as in the second embodiment described above. It is also possible to have a structure in which a semiconductor chip sandwiched therein is mounted.

The bonding wire 32 is formed using a wire bonding apparatus or the like including a capillary used in a general wire bonding process. The connection pads 15 of the semiconductor chips 11 and the substrate pads 22 of the module substrate 20 are electrically connected one to one by the bonding wires 32.

As shown in the drawing, the connection pads I5 and the substrate pads 22 are formed at a portion away from each other in a region where the semiconductor chip 11 and the module substrate 20 are close to each other, unlike the above-described embodiments. It is desirable to be. The reason is that the connection pads 15 and the substrate pads 22 are bonded with the wires 32 in a state where the semiconductor chips 11 are vertically penetrated through the through holes 21 of the module substrate 20. This is because an operation space such as a capillary must be secured because it must be connected.

On the other hand, in order to increase the capacity of the module and the mounting density of the semiconductor device in a module substrate of a certain standard, the stacked semiconductor devices may be mounted on the module substrate. This type of memory module will be described in the following embodiment.

Fourth embodiment

5A and 5B are a perspective view and a cross-sectional view illustrating a semiconductor chip and a memory module of a memory module according to a fourth embodiment of the present invention. In the present embodiment, the same components or corresponding components as the above-described embodiments have the same reference numerals, and description thereof will be omitted.

5A and 5B, the memory module 400 according to the present exemplary embodiment has a similar basic configuration and function to the memory module of the above-described embodiments, but the semiconductor device is a dual stack chip 411. It is characterized by

The dual stack chip 411 has two semiconductor chips 11 attached thereto, and the back surfaces of the surfaces on which the connection pads 15 of the semiconductor chip 11 are formed are attached to each other by the adhesive 18. The adhesive 18 is formed of a non-conductive material and may be in the form of a film or paste.

The dual stack chips 411 are mounted to penetrate through the through holes 21 of the module substrate 20 vertically. The connection pads 15 formed on both sides of the dual stack chip 411 and the substrate pads 22 formed on the surfaces of the module substrate 20 adjacent to both sides thereof are electrically connected one-to-one by the solder 31. . Although the two semiconductor chips 11 are not electrically connected directly before the dual stack chip 411 is mounted on the module substrate 20, the wiring formed on the module substrate 20 after the dual stack chip 411 is mounted on the module substrate 20 ( Two semiconductor chips 11 may be electrically connected to each other by the solder 31 and the solder 31. Here, the connecting means is not limited to the solder 31, but as in the above-described third embodiment, a bonding wire may be used.

In the vertically mounted memory module according to the present embodiment, two semiconductor chips are not electrically connected directly to each other. Therefore, it is unlikely that a defect will occur in the process of manufacturing the dual stack chip, and after manufacturing the dual stack chip, the step of checking the quality / failure of the electrical connection state of the dual chip may be omitted.

On the other hand, the dual stack chip may be formed using other means than the adhesive described above. An example is described in the following example.

Fifth Embodiment

6A and 6B are perspective views illustrating a semiconductor chip, a module substrate, and a memory module of a memory module according to a fifth embodiment of the present invention. In the present embodiment, the same components or corresponding components as the above-described embodiments have the same reference numerals, and description thereof will be omitted.

6A and 6B, the memory module 500 according to the present exemplary embodiment has a similar basic configuration and function to the memory module of the fourth exemplary embodiment described above, but the dual stack chip 511 includes two semiconductor chips 11. ) Is a form fitted to the pocket type protection lead 19.

The pocket protection lead 19 is similar to the pocket protection lead (16 in FIGS. 3A and 3B) in the above-described second embodiment, except that two pockets are formed to fit the two semiconductor chips 11. There is. As shown in the drawing, the pocket type protective lead 19 is formed with two pockets into which two semiconductor chips 11 can be fitted, or by using two pocket type protective leads in the second embodiment, The back surfaces of the attachment surface 17 may be attached to each other so that the attachment surface 17 is exposed to both sides.

The dual stack chip 511 is fitted into the pocket type protection lead 19 so that the surface on which the connection pad 15 of the semiconductor chip 11 is formed is exposed, so that the back surfaces of the surface on which the connection pad 15 is formed are attached to the surface 17. Four sides of the semiconductor chip 11 in the thickness direction of the semiconductor chip 11 are attached to the four sidewalls 13 so that the surfaces on which the connection pads 15 are not formed are covered. An adhesive is interposed between the semiconductor chip 11 and the attachment surface 17 so that the semiconductor chip 11 is not separated from the pocket protection lead 19, and the surfaces of the semiconductor chip 11 inserted into the pocket protection lead 19 Protected from the outside environment

The dual stack chips 511 in which two semiconductor chips 11 are inserted into the pocket protection leads 19 are vertically penetrated through the through holes 21 of the module substrate 20, respectively, and are solder 31. By doing so, the connection pads 15 and the substrate pads 22 are electrically connected one to one. This connecting means is not limited to the solder 31, but a bonding wire may be used, as in the above-described third embodiment.

On the other hand, the memory module according to the above embodiments has a structure in which the semiconductor elements in the semiconductor chip state is mounted on the module substrate. However, the present invention is not limited to this structure, and a structure in which a semiconductor element in a semiconductor chip package state is mounted on a module substrate is also possible. Such a memory module will be described below.

Sixth embodiment

7 is a cross-sectional view illustrating a memory module according to a sixth embodiment of the present invention. In the present embodiment, the same components or corresponding components as the above-described embodiments have the same reference numerals, and description thereof will be omitted.

Referring to FIG. 7, the memory module 600 according to the present exemplary embodiment is similar in structure and function to the memory module of the above-described embodiments, but the semiconductor device is a semiconductor chip package 612.

In the semiconductor chip package 612 of FIG. 7, the semiconductor chip 311 is attached to the wiring board 320 by an adhesive 318, and the semiconductor chip 311 and the wiring board 320 are bonded to the bonding wire 332. Although connected, the structure in which the resin encapsulation 312 covers the upper surface of the semiconductor chip 311, the bonding wire 332, and the wiring board 320 is illustrated, but is not limited thereto.

The connection pads 315 may be disposed on one surface of the wiring board 320 of the semiconductor chip package 612 when the semiconductor chip package 612 is mounted through the through-hole 21 of the module substrate 20. It is formed on both sides with respect to the area | region located in the through-hole 21 of.

The semiconductor chip packages 612 are vertically penetrated through the through holes 21 of the module substrate 20, and the connection pads 315 of the semiconductor chip packages 612 and the substrate pads of the module substrate 20 are mounted. 22 are electrically connected one to one by solders 31. Here, instead of the solder 31 used as the connecting means, connecting means such as the bonding wire of the above-described third embodiment may be used.

Seventh embodiment

8 is a cross-sectional view illustrating a memory module according to a seventh embodiment of the present invention. In the present embodiment, the same components or corresponding components as the above-described embodiments have the same reference numerals, and description thereof will be omitted.

Referring to FIG. 8, the memory module 700 according to the present exemplary embodiment has a similar basic configuration and function to the memory module of the above-described embodiments, but the semiconductor device has a dual stack in which two semiconductor chip packages 612 are attached to each other. It is characterized by being a package 712.

In the semiconductor device of the memory module 700 according to the present exemplary embodiment, a dual stack package in which upper surfaces of the resin encapsulation part 312, which is the back surface of the surface on which the connection pads 315 of the two semiconductor chip packages 12 are formed, are attached to each other 712. The individual semiconductor chip package 612 has the same structure as the semiconductor chip package of the sixth embodiment described above, but is not limited thereto.

In addition, the dual stack package 712 is illustrated in FIG. 8 in which top surfaces of the resin encapsulation 312 of the semiconductor chip packages 12 are attached to each other through the adhesive 18. The dual stack package 712 is not limited thereto, and may be in the form of a dual stack package using a means such as a pocket protective lead as in the fifth embodiment.

The dual stack packages 712 are vertically penetrated through the through holes 21 of the module substrate 20, respectively, and the connection pads 315 of the dual stack packages 712 and the substrate pads of the module substrate 20 are mounted. 22 are electrically connected one to one by solders 31. Unlike the general dual stack package, the dual stack package 712 is not electrically connected directly to the two semiconductor chip packages 612 until it is mounted on the module substrate 20. After the dual stack package 712 is mounted on the module substrate 20, the semiconductor chip packages 612 may be electrically connected to each other by the wiring 31 and the solder 31 formed on the module substrate 20. On the other hand, instead of the solder 31 used as the connecting means, a connecting means such as the bonding wire of the above-described third embodiment may be used.

Meanwhile, the vertically mounted memory module in which the semiconductor device according to the present invention is vertically penetrated through the module substrate is not limited to the above-described embodiments and may be variously modified within the scope not departing from the technical spirit of the present invention. . This will be readily apparent to those skilled in the art.

According to the vertically mounted memory module in which the semiconductor device according to the present invention is vertically penetrated and mounted on the module substrate, since the semiconductor devices are vertically mounted in the through holes formed in the module substrate, the semiconductor device is mounted on the module substrate. The area to be mounted is reduced. Therefore, it is possible to increase the capacity of the module and the mounting density of the semiconductor device in a module substrate of a standard without stacking individual semiconductor devices. This also solves the problems that could arise from lamination.

In addition, although the semiconductor devices are mounted perpendicular to the module substrate, the semiconductor devices have a region located in the through hole of the module substrate, and thus do not significantly affect the height of the memory module.

In addition, the stacked semiconductor devices may be mounted vertically through the module substrate to further increase the capacity of the module and the mounting density of the semiconductor devices. In this case, the attached semiconductor chips or semiconductor chip packages may be electrically connected to each other by wires and connection means formed on the module substrate after being mounted on the module substrate rather than directly connected electrically. Therefore, a defect is unlikely to occur during the manufacturing of the dual stack chip or the dual stack package, and after manufacturing the dual stack chip or the dual stack package, the step of checking the quality / failure of the electrical connection state of the product may be omitted. have.

Claims (9)

Semiconductor devices having connection pads formed on at least one surface thereof; Through-holes formed to pass through the semiconductor elements, respectively, and substrate pads formed in a one-to-one correspondence with the connection pads on a surface adjacent to the surface of the semiconductor element where the connection pads are formed around the through-holes; A module substrate having an external connection pattern formed at one edge portion thereof, The semiconductor devices may be mounted to penetrate through the through holes of the module substrate, respectively, and the connection pads may be formed in an area exposed from the module substrate on at least one surface of the semiconductor device. And substrate pads are electrically connected one-to-one. According to claim 1, And the connection pads are formed at both sides of an area of the semiconductor device where the connection pads are formed in a through hole of the module substrate. According to claim 1, The semiconductor device is at least one of a semiconductor chip or a semiconductor chip package. The method of claim 3, wherein The semiconductor devices may be semiconductor chips, and the semiconductor chips may be inserted into pocket-type protection leads that cover surfaces other than the surface on which the connection pads are formed, and may be vertically penetrated through the through holes of the module substrate. Vertically mounted memory module, characterized in that. According to claim 1, The semiconductor device may be a dual semiconductor device in which two semiconductor devices having the connection pads formed on one surface thereof are attached, and the dual semiconductor device may include back surfaces of the surface on which the connection pads are formed. The method of claim 5, The dual semiconductor device may have the back surfaces attached to each other through at least one of an adhesive or a pocket-type protective lead in which two pockets in which the two semiconductor devices are fitted are integrally formed to cover surfaces other than the surface on which the connection pads are formed. Vertical mount memory module. According to claim 1, And the connection means is at least one of solder or bonding wires. The method of claim 7, wherein The connecting means is solder, the connection pad is formed in a region proximate to the module substrate on one surface of the semiconductor device, the substrate pad is formed in a region proximate to the semiconductor element on the surface of the module substrate Mountable memory module. According to claim 1, And the through hole is formed in at least one of a long side direction and a short side direction of the module substrate.

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