KR20070094280A - Light emitting device package and fabricating method thereof - Google Patents

Abstract

A light emitting device package and its manufacturing method are provided to downsize the package by installing a protective circuit in a submount using a diffusion layer. One ends of a pair of lead are enclosed by package bodies(110a,110b), and a heat sink(120) is inserted into a through-hole of the package body. A submount(130) has upper and lower surfaces, and a mounting groove formed on a center portion of the upper surface. A light emitting element(131) is flip-chip-bonded to the upper portions of a pair of electrodes formed on the submount. A conductive wire(150) electrically connects the electrodes with the leads. The light emitting element, the submount and the conductive wire are enclosed by moldings(160,180).

Description

Light Emitting Device Package And Fabricating Method Thereof}

1A to 1G are schematic cross-sectional views illustrating a general manufacturing method of a light emitting device package according to the prior art.

2 is a cross-sectional view for explaining a first embodiment of the light emitting device package according to the present invention.

3A to 3G are cross-sectional views illustrating a method of manufacturing the light emitting device package shown in FIG. 2.

Figure 4 is a cross-sectional view for explaining a second embodiment of the light emitting device package according to the present invention.

FIG. 5 is a partially enlarged view for explaining the state of region A in FIG. 4 in more detail.

6 is a schematic perspective view of a sub-mount structure used in the light emitting device package of the present invention.

7 and 8 are cross-sectional views of a preferred submount structure applicable to FIG. 2.

9 is a cross-sectional view of a preferred submount structure applicable to FIG. 4.

<Description of main parts of drawing>

100, 200. Light emitting device package 100a, 200a. First lead

100b, 200b. Second leads 110a, 110b, 210a, 210b. Package body

120, 220.heat sink 130, 230. submount

131, 231. Light emitting element 150. Conductive wire

160, 260. First molding part 170, 270. Hemispherical lens (Lens)

180, 280. Second molding portion 132, 232. Silicon structure

133a, 233a. First diffusion layers 133b and 233b. Second diffusion layer

134, 234. Insulating films 135a, 235a. First electrode

135b, 235b. Second electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package and a method for manufacturing the same, and more particularly, to a structure of a high power light emitting diode package suitable for lighting and automotive electronics and a method of manufacturing the same.

Conventional light emitting diodes (Light Emitign Diode) was a low-luminance product, but as the luminous efficiency of light emitting diodes is improved, it is now widely used for light sources for displays, lighting and automobiles, and is rapidly used for home and industrial lighting. It is expected to widen.

Meanwhile, as the light emitting diode efficiency is increased, the conventional simple light emitting package structure cannot cope with the high brightness package, and the size is also very compact so that it can be applied to a light source for a display, a camera element, and a display element.

In addition, the conventional cup-type package has been developed from the surface mount (Surface mount) type package.

1A to 1G are cross-sectional views illustrating a method of manufacturing a light emitting diode package according to the prior art.

First, package bodies 11a and 11b having holes penetrated in the center region and having a pair of leads 10a and 10b spaced apart from each other are prepared (FIG. 1A).

Thereafter, the heat sink 12 is inserted from below into the through hole in the center area of the package bodies 11a and 11b to join the heat sink 12 and the package bodies 11a and 11b (FIG. 1B).

Subsequently, a light emitting diode 13 and a zener diode 14 are bonded to the heat sink 12. (FIG. 1C).

Then, the conductive wire 15 is bonded so that the light emitting diode 13 and the zener diode 14 are electrically connected in parallel and electrically connected with the leads 10a and 10b, and the light emitting diode 13 and The first molding part 16 in which the phosphor is dispersed is formed to surround the zener diode 14 (FIG. 1D).

Subsequently, a lens 17 surrounding the light emitting diode 13, the zener diode 14, and the conductive wire 15 is bonded to the package bodies 11a and 11b (FIG. 1E).

After that, the second molding part 18 is filled in the lens 16 (FIG. 1F).

Finally, the pair of leads 10a and 10b are respectively bent (Fig. 1G).

The light emitting device package formed through the conventional manufacturing method as described above can determine whether the light emitting diode is defective after completing the package manufacturing process or through electrical and optical measurements, and thus the defective rate of the package due to the defective light emitting device is high. Therefore, there is a problem that the production yield falls.

In addition, since a separate space is required for mounting the zener diode element on the heat sink, there is a limit in miniaturizing the package size.

On the other hand, in the upper part of the heat sink in which the light emitting diode and the zener diode are mounted, the edge structure made to surround the circumference of the light emitting diode and the zener diode is rough due to the characteristics of the material forming the heat sink. The disadvantage is that the generated light is not reflected well outside the package.

In order to solve such a conventional problem, the present invention, by selectively mounting only the sub-mount (Submount) in which only the light-emitting device has been verified the electrical and optical characteristics in advance in the package, the final due to the failure of the light-emitting device itself It is an object of the present invention to provide a light emitting device package and a method of manufacturing the same, which reduce the defective rate of the conventional package and improve the production yield.

In addition, another object of the light emitting device package and the method of manufacturing the same according to the present invention, there is no need to separately mount a Zener diode (Zener Diode) element for protecting the light emitting device using such a semiconductor impurity diffusion layer in the interior The present invention provides a light emitting device package having a smaller size by providing a submount that can be implemented.

On the other hand, a further object of the light emitting device package and a method of manufacturing the same according to the present invention is to reflect the light generated by the light emitting device to the outside of the package through a high reflectance electrode formed on the side inclined in the mounting groove of the submount The present invention provides a light emitting device package having improved efficiency and light extraction efficiency of a package.

A light emitting device package according to a first exemplary embodiment of the present invention includes a package body having a through hole formed in a central area and surrounding one end of a pair of leads; A heat sink inserted into the through hole of the package body; There is an upper surface and a lower surface, and mounting grooves having inclined sides and a bottom surface are formed in the center area of the upper surface, and a pair of electrodes are formed from the bottom surface to the upper surface along the inclined side surface. A submount having a bottom surface bonded to the top of the heat sink; A light emitting device flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; Conductive wires electrically connecting the electrodes and the leads formed in the submount upper surface region, respectively; And a molding unit surrounding the light emitting device, the submount, and the conductive wire.

In addition, the light emitting device package according to the second embodiment of the present invention, the through-hole is formed in the center area, the package body (Body) surrounding the one end of the pair of leads to be spaced apart from the inside of the through-hole; A heat sink having a groove at an upper portion thereof so as not to contact one end of the pair of leads protruding inside the through hole and inserted into the through hole of the package body; There is an upper surface and a lower surface, and a mounting groove having an inclined side and a bottom surface is formed on the upper surface, spaced apart from each other at the bottom surface and the bottom surface of the mounting groove, the lower side from the bottom surface of the mounting groove A submount having a pair of electrodes formed up to a surface, the pair of electrodes in the lower surface area bonded to leads protruding inside the through hole of the package body; A light emitting device flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; It is preferably made to include; a molding (Molding) surrounding the light emitting element and the submount.

In addition, the light emitting device package manufacturing method according to the first embodiment of the present invention, the through-hole is formed in the center region, the step of preparing a package body (Body) surrounding one end of the pair of leads; Inserting a heat sink into a through hole of the package body; There is an upper surface and a lower surface, and mounting grooves having inclined sides and a bottom surface are formed in the center area of the upper surface, and a pair of electrodes are formed from the bottom surface to the upper surface along the inclined side surface. Preparing a submount in which light emitting devices are flip chip bonded on the electrodes in the bottom region of the mounting groove, and bonding a lower surface of the submount on the heat sink; A wire bonding step of electrically connecting the electrodes and the leads formed in the submount upper surface region using conductive wires, respectively; And a molding step of forming a molding part surrounding the light emitting element, the submount, and the conductive wire.

In addition, in the method of manufacturing a light emitting device package according to a second embodiment of the present invention, a through-hole is formed in a central region, and a package body wrapping one end of a pair of leads to be spaced apart from the inside of the through-hole. Preparing); Inserting a heat sink having a groove into the through hole of the package body so as not to contact one end of the pair of leads protruding inside the through hole; There is an upper surface and a lower surface, and a mounting groove having an inclined side and a bottom surface is formed on the upper surface, spaced apart from each other at the bottom surface and the bottom surface of the mounting groove, the lower side from the bottom surface of the mounting groove A pair of electrodes formed up to the surface, and a submount having flip chip bonding of a light emitting element on the electrodes of the bottom region of the mounting groove is prepared, and the submount is prepared. Bonding to a pair of electrodes in the bottom surface region and leads protruding inside the through hole; And a molding step of forming a molding part surrounding the light emitting element and the submount.

Hereinafter, a light emitting device package and a method of manufacturing the same according to a preferred embodiment of the present invention with reference to the drawings will be described in detail.

FIG. 2 is a cross-sectional view illustrating a first preferred embodiment of a light emitting device package according to the present invention, in which a through hole is formed in a central region and a package body surrounding one end of a pair of leads 100a and 100b ( Body 110a and 110b; A heat sink 120 inserted into the through holes of the package bodies 110a and 110b; There is an upper surface and a lower surface, and a mounting groove having an inclined side and a bottom surface is formed in the center region of the upper surface, and the pair of electrodes are formed from the bottom surface to the upper surface along the inclined side surface, respectively. A submount 130 having a lower surface bonded to an upper portion of the heat sink 120; A light emitting element 131 flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; Conductive wires 150 for electrically connecting the electrodes formed in the upper surface area of the submount 130 and the leads 100a and 100b, respectively; Molding (160, 180) surrounding the light emitting device 131, the submount 130 and the conductive wire 150; has a basic structure that includes, the molding unit 180 as shown ) Further comprises a hemispherical lens (Lens) (170) surrounding the outside.

Here, the pair of leads 100a and 100b may be bent as shown to help bonding with an external substrate such as a printed circuit board (PCB).

In addition, the package body (110a, 110b) is shown as a separate separate from the left and right each independently on the drawing, but it is just a cross-sectional view, three-dimensional, as a lump enclosed around the heat sink 120 It can be called a structure made up.

At this time, the package body (110a, 110b) is preferably made of any one of plastic, ceramic, a material combined with a plastic and ceramic.

In addition, the through-holes in the central regions of the package bodies 110a and 110b have a circular horizontal cross-sectional shape, and as illustrated, the diameter of the upper portion is smaller than that of the lower portion.

On the other hand, as shown, it is preferable that there is a groove for exposing the upper part of the lead in the side region of the package body (110a, 110b) surrounding one end of the pair of leads (100a, 100b), the conductive wire Is preferably bonded to the groove region.

As shown, the two molding parts 160 and 180 may be formed of different resins using molding resins such as epoxy, transparent epoxy, silicone gel, etc., or one molding resin. It may be formed so as to be integral.

Finally, the structure of the submount 130 will be described in more detail with reference to FIGS. 7 and 8.

As described above, the light emitting device package 100 according to the first exemplary embodiment of the present invention includes a submount 130 in which the light emitting device 131 is mounted on the heat sink 120. As illustrated, the light emitting device 131 and the leads 100a and 100b are electrically connected to each other by the wire bonding method through the conductive wire 150.

3A to 3G are cross-sectional views illustrating a method of manufacturing the light emitting device package shown in FIG. 2 as a first preferred embodiment according to the present invention.

First, through-holes are formed in the central region, and package bodies 110a and 110b surrounding one end of the pair of leads 100a and 100b are prepared (FIG. 3A).

The heat sink 120 is inserted into the through holes of the package bodies 110a and 110b (FIG. 3B).

Subsequently, there is an upper surface and a lower surface, and a mounting groove having an inclined side surface and a bottom surface is formed in a central region of the upper surface, and the pair of electrodes are respectively formed on the top surface along the inclined side surface at the bottom surface. The submount 130 is formed by flip chip bonding the light emitting device 131 on the electrodes of the bottom region of the mounting groove. 120) The bottom surface of the submount 130 is bonded to the top (FIG. 3C).

For reference, the mounting groove of the submount is preferably formed through anisotropic etching through a bulk micro machining process.

In this case, a wire bonding process diagram for electrically connecting the electrodes formed on the upper surface area of the submount 130 and the leads 100a and 100b using the conductive wire 150, respectively. In parallel (FIG. 3C).

Subsequently, molding parts 160 and 180 are formed to surround the light emitting device 131, the submount 130, and the conductive wire 150. (FIGS. 3D to 3F).

In this case, as shown in FIG. 3E, before forming the second molding part 180, a process of bonding the hemispherical lens lens 170 on the package bodies 110a and 110b is further performed. It is preferable to carry out.

Finally, each of the pair of leads 100a and 100b is bent to be suitable for bonding to a printed circuit board or the like (FIG. 3G).

4 is a cross-sectional view for describing a second exemplary embodiment of a light emitting device package according to the present invention, in which a through hole is formed in a central region, and one end of a pair of leads 200a and 200b is formed inside the through hole. Package bodies 210a and 210b wrapped to be spaced apart from each other; A heat sink having a groove in an upper portion thereof so as not to contact one end of the pair of leads 200a and 200b protruding inside the through hole and inserted into the through holes of the package bodies 210a and 210b ( 220); A mounting groove having an upper surface and a lower surface, the mounting groove having an inclined side surface and a bottom surface formed on the upper surface, spaced apart from each other at the bottom surface and the lower surface of the mounting groove, and the bottom of the mounting groove. A pair of electrodes formed from a surface to the lower surface, respectively, and the pair of electrodes of the lower surface region protrude in the through-holes of the package bodies 210a and 210b. A submount 230 bonded to the submount 230; A light emitting device 231 flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; Molding parts (260, 280) surrounding the light emitting element 231 and the sub-mount 230; has a basic structure, including, as shown, hemispherical shape surrounding the molding (280) A lens 270 is further included.

Here, the pair of leads 200a and 200b may be bent as shown, so as to be suitable for bonding with an external substrate such as a printed circuit board (PCB).

In addition, the package bodies 210a and 210b may be seen as separate pieces, each of which is independently separated from each other on the drawing, but it is a cross-sectional view. However, in three dimensions, the package bodies 210a and 210b may be enclosed in a lump surrounding the heat sink 220. It can be called a structure made up.

At this time, the package body (210a, 210b) is preferably made of any one of plastic, ceramic, a material combined with a plastic and ceramic.

In addition, the through-holes in the central regions of the package bodies 210a and 210b have a circular horizontal cross-sectional shape, and as shown in the drawings, the through holes are preferably smaller in diameter than the lower portion.

On the other hand, as shown, the heat sink 220 is energized with a pair of electrodes formed in the lower region of the submount 230 and a pair of leads (200a, 200b) of the package body (210a, 210b) ( It is desirable to have a structure that prevents it from passing through.

The molding parts 260 and 280 of the two parts may be formed of different resins using molding resins such as epoxy, transparent epoxy, and silicone gel including phosphors, or may be made of the same single resin. .

Finally, the structure of the submount 230 will be described in detail with reference to FIG. 9.

As described above, the light emitting device package 200 according to the second exemplary embodiment of the present invention includes a submount 230 in which the light emitting device 231 is mounted on the heat sink 220. As shown in the drawing, a flip chip joins the regions L1 and L2 of the leads 200a and 200b which are spaced apart from each other in the through hole region to the center region of the submount 230 and the package bodies 210a and 210b. The biggest feature is that the light emitting device 231 and the leads 200a and 200b are electrically connected by a flip chip bonding method.

FIG. 5 is a partially enlarged view for explaining the state of the region A in FIG. 4 in more detail.

As described above, as described above, the structure of the submount 230 mounted on the light emitting device package 200 shown in FIG. 4 preferably has the structure as shown in FIG. 9.

First, in FIG. 4, the height of the top surface of the heat sink 220 is schematically illustrated as having the same height as the leads 200a and 200b, but in reality, the top surface of the heat sink 220 is the submount. The length of the lead is preferably higher than that of the lead so as to contact the region of the insulating layer 234 under the 230.

This is because the purpose of mounting the heat sink 220 is to mount it for the purpose of efficiently absorbing heat generated from the light emitting device and discharging it to the outside of the package.

At this time, the length of the L3, together with the thickness of the electrodes (235a, 235b) formed in the submount 230, although not shown in the figure, the electrical between the electrodes (235a, 235b) and the leads (200a, 200b) It is a thickness considering the thickness of a conductive adhesive, such as a solder (Solder) interposed to bond.

In addition, since the heat sink 220 has good thermal conductivity, and also has good electrical conductivity, as shown in the drawing, the heat sink 220 may not be in direct contact with the leads 200a and 200b or the electrodes 235a and 235b. By forming in consideration of the interval, it is preferable to prevent the electrical short (Short).

6 is a perspective view for schematically illustrating a submount structure mounted on a light emitting device package according to the present invention.

As shown, the overall appearance of the submount used in the light emitting device package of the present invention has a mounting groove in which the light emitting device 231 is mounted in an upper center region, and a bottom surface of the mounting groove. The electrodes 235a and 235b are formed along opposing regions which are spaced apart from each other and include inclined side regions of the mounting groove of the submount.

Here, the submount is preferably made of silicon, the upper mounting groove is formed by anisotropic etching through the bulk micro machining process together with the side shape of the submount. .

For reference, cross-sectional views of the submount to be described later show the shape of the cut plane across the center region of the pair of electrodes 235a and 235b on the perspective view of this submount.

FIG. 7 is a first example of a preferred submount applicable to FIG. 2, wherein the submount presented here is a structure in which only a light emitting device 131 is mounted without a protection circuit using a diffusion layer. .

Specifically, the body of the submount is made of a silicon structure 132, the silicon structure 132, as a silicon or silicon substrate is formed by anisotropic etching using a bulk micro machining (Bulk Micro Machining) process, shown As described above, the mounting groove has an inclined side surface so as to protrude from the mounting groove and both side center regions.

In addition, as illustrated, the insulating film 134 is formed along the shape of all the outer surfaces of the silicon structure 132.

In addition, the pair of electrodes 135a and 135b are formed along the surface of the insulating film 134 from a partial area spaced apart from the bottom surface area of the mounting groove to a central area protruding from both sides of the silicon structure 132. Lose.

On the other hand, the light emitting device 131 is electrically connected to the upper portion of the electrode (135a, 135b) formed in the partial region spaced apart from each other in the bottom region of the mounting groove through a conductive adhesive such as solder (Solder). Bonded

FIG. 8 is a second example of a preferred submount applicable to FIG. 2, wherein the submount presented here is characterized in that a light emitting device 131 is mounted and a protection circuit is implemented.

The submount is made of silicon of n or p type, and an insulating film having an opening between the pair of electrodes and the submount to allow the pair of electrodes to directly contact the submount, respectively. It is preferable that impurity diffusion layers 133a and 133b of the opposite type to silicon are formed on the surface of the submount of at least one of the opening regions.

In this case, the submount refers to the silicon structure 132.

That is, the difference from the submount described with reference to FIG. 7 is that diffusion layers 133a and 133b having different polarities from those of the silicon structure 132 are formed in the upper region of the silicon structure 132. An opening is formed in the insulating film 134 in the diffusion layer region so that the electrodes 135a and 135b are electrically connected to each other.

In addition, the pair of electrodes 135a and 135b are formed along the surface of the insulating film 134 from a partial area spaced apart from the bottom surface area of the mounting groove to a central area protruding from both sides of the silicon structure 132. have.

On the other hand, the light emitting device 131 is electrically connected to the upper portion of the electrode (135a, 135b) formed in the partial region spaced apart from each other in the bottom region of the mounting groove through a conductive adhesive such as solder (Solder). Bonded

In addition, by forming the diffusion layers 133a and 133b in a part of the silicon structure 132 as described above, the light emitting device 131 is electrically connected in parallel, and through this, a zener of a pnp or npn junction structure is formed. Functions such as a diode (Zener Diode) element is implemented, there is an advantage that can protect the light emitting element from static electricity and reverse voltage without mounting a separate zener diode element inside the package, and can reduce the size of the package .

Here, only the case where the protection circuit of the pnp or npn junction structure having two diffusion layers is implemented is described. However, the function of protecting the light emitting element through the protection circuit of the pn or np junction structure having only one diffusion layer is provided. It can be implemented internally.

FIG. 9 is an example of a preferred submount applicable to FIG. 4, wherein the submount presented here includes a light emitting element 231 mounted therein, a protection circuit implemented, and electrodes 235a and 235b formed of a silicon structure ( 232) characterized in that formed extending to the lower surface.

The submount is made of silicon of n or p type, and an insulating film having an opening between the pair of electrodes and the submount to allow the pair of electrodes to directly contact the submount, respectively. The impurity diffusion layers 233a and 233b opposite to the silicon are preferably formed on the surface of the submount of at least one of the opening regions.

In this case, the submount refers to the silicon structure 232.

That is, the difference from the submount described in FIG. 8 is that diffusion layers 233a and 233b having different polarities from those of the silicon structure 232 are formed in the lower region of the silicon structure 232. Openings are formed in the insulating film 234 of the diffusion layer region so that the electrodes 235a and 235b are electrically connected to each other, and the pair of electrodes 235a and 235b include the diffusion layer region under the silicon structure 232. It covers the area and is formed to be spaced apart from each other.

The pair of electrodes 235a and 235b are spaced apart from each other under the silicon structure 232 along both sides of the silicon structure 232 from some areas spaced apart from each other in the bottom area of the mounting groove. It is formed to some area | region to include.

On the other hand, the light emitting element 231 is electrically connected to the upper portion of the electrode 235a, 235b formed in some areas spaced apart from each other in the bottom area of the mounting groove through a conductive adhesive such as solder (Solder) Bonded as possible.

For reference, by forming the diffusion layers 233a and 233b on a portion of the silicon structure 232 as described above, the light emitting device 231 is electrically connected in parallel, and thus, the pnp or npn junction structure Since the same function as a Zener diode device is implemented, there is an advantage that the light emitting device can be protected from static electricity and reverse voltage even without a separate Zener diode device mounted inside the package, thus making the package smaller in size. You can.

Likewise, only the case of implementing the protection circuit of the pnp or npn junction structure having two diffusion layers has been described. However, the function of protecting the light emitting device may be realized through the protection circuit of the pn or np junction structure having only one diffusion layer. Can be.

Metal materials used as electrodes 135a, 135b, 235a, and 235b in sub-mounts as shown in FIGS. 7, 8, and 9 have high reflectance in common, and are used in the light emitting device package of the present invention. Since the highly reflective electrode is formed in the upper mounting groove inclined inner side region B of the submount, the light emitted from the side of the light emitting element 231 can be efficiently reflected to the outside of the package. As a result, the light extraction efficiency of the light emitting device package can be improved.

In addition, the use of such a submount can determine in advance whether the electrical and optical characteristics of the light emitting device is defective, so that only a good submount can be mounted on the light emitting device package. The failure rate of the device package can be reduced, and the production yield of the package can be improved.

Although the configuration of the invention according to the embodiment of the present invention has been described in detail, the present invention is not necessarily limited to the embodiment, and various modifications can be made without departing from the spirit of the present invention.

As described above, according to the light emitting device package and the method of manufacturing the light emitting device package of the present invention, since the submount mounting only the light emitting device whose electrical and optical properties are verified is mounted in the heat sink, the light emitting device By determining in advance whether or not the defect of the, the defective rate of the finally completed light emitting device package can be reduced, the production yield of the package can be improved.

In addition, according to the light emitting device package of the present invention and a method of manufacturing the same, it is not necessary to mount a separate Zener diode device for protecting the light emitting device from static electricity and reverse voltage, such a function is a semiconductor impurity ion Since it can be implemented by a submount having a diffusion layer formed through a semiconductor process such as an implantation and diffusion process, there is no need for space for mounting a Zener diode element, and the size of the overall package can be further reduced. have.

In addition, according to the light emitting device package and a method of manufacturing the same, an electrode having a high reflectance is formed on the inclined side surface of the mounting groove in the submount, the efficiency of being reflected outside the package of light generated by the light emitting device compared to the conventional And it is effective to further improve the light extraction efficiency of the package.

Claims (14)

A through-hole formed in the central region, the package body surrounding one end of the pair of leads; A heat sink inserted into the through hole of the package body; There is an upper surface and a lower surface, and a mounting groove having an inclined side and a bottom surface is formed in the center region of the upper surface, and the pair of electrodes are formed from the bottom surface to the upper surface along the inclined side surface, respectively. A submount having a lower surface bonded to an upper portion of the heat sink; A light emitting device flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; Conductive wires electrically connecting the electrodes and the leads formed in the submount upper surface region, respectively; And a molding unit surrounding the light emitting device, the submount, and the conductive wire. A through-hole formed in a central region and surrounding one end of the pair of leads to be spaced apart from the inside of the through-hole to protrude; A heat sink having a groove at an upper portion thereof so as not to contact one end of the pair of leads protruding inside the through hole and inserted into the through hole of the package body; A mounting groove having an upper surface and a lower surface, the mounting groove having an inclined side surface and a bottom surface formed on the upper surface, spaced apart from each other at the bottom surface and the lower surface of the mounting groove, and the bottom of the mounting groove. A submount having a pair of electrodes formed from a surface to the bottom surface, wherein the pair of electrodes of the bottom surface region are bonded to leads protruding into a through hole of the package body; A light emitting device flip-chip bonded on the pair of electrodes in the bottom region of the mounting groove; And a molding unit surrounding the light emitting device and the submount. The method according to claim 1 or 2, Light emitting device package further comprises a hemispherical lens (Lens) surrounding the molding portion and the upper portion of the package body (Body). The method according to claim 1 or 2, The through hole, A light emitting device package, characterized in that the horizontal cross-sectional shape is circular, the upper diameter is smaller than the lower portion. The method of claim 1, In the side region of the package body surrounding one end of the pair of leads, Light emitting device package, characterized in that the groove is formed for exposing the upper portion of the lead. The method of claim 2, The heat sink is, And a structure in which the pair of electrodes formed in the submount lower region and the pair of leads of the package body are not energized. The method according to claim 1 or 2, The submount, Light emitting device package, characterized in that made of silicon. The method of claim 7, wherein The submount, an insulating film made of n or p type silicon and having an opening between the pair of electrodes and the submount to allow the pair of electrodes to directly contact the submount, respectively; A light emitting device package characterized in that an impurity diffusion layer of a type opposite to that of silicon is formed on a surface of at least one submount. The method according to claim 1 or 2, The heat sink is, The light emitting device package, characterized in that inserted into the through-hole of the package body and bonded. Preparing a package body having a through hole formed in a central region and surrounding one end of the pair of leads; Inserting a heat sink into a through hole of the package body; There is an upper surface and a lower surface, and a mounting groove having an inclined side and a bottom surface is formed in the center region of the upper surface, and the pair of electrodes are formed from the bottom surface to the upper surface along the inclined side surface, respectively. And a submount having flip chip bonding of light emitting devices on the electrodes in the bottom region of the mounting groove, and placing the lower surface of the submount on the heat sink. Bonding; A wire bonding step of electrically connecting the electrodes and the leads formed in the submount upper surface region with conductive wires, respectively; And a molding step of forming a molding part surrounding the light emitting device, the submount, and the conductive wire. Preparing a package body having a through hole formed in a central region and surrounding one end of the pair of leads to be spaced apart from the inside of the through hole to protrude; Inserting a heat sink having a groove into the through hole of the package body to prevent contact with one end of the pair of leads protruding inside the through hole; A mounting groove having an upper surface and a lower surface, the mounting groove having an inclined side surface and a bottom surface formed on the upper surface, spaced apart from each other at the bottom surface and the lower surface of the mounting groove, and the bottom of the mounting groove. A pair of electrodes formed from a surface to a bottom surface, and a submount in which light emitting devices are flip-chip bonded on top of electrodes in a bottom region of the mounting groove is prepared. Bonding the pair of electrodes in the submount lower surface area and the leads protruding into the through hole; And a molding step of forming a molding part surrounding the light emitting device and the submount. The method according to claim 10 or 11, wherein The mounting groove, Method of manufacturing a light emitting device package, characterized in that formed through anisotropic etching through a bulk micro machining process (Bulk Micro Machining). The method according to claim 10 or 11, wherein Before forming the molding part after wire bonding or bonding of the submount, A method of manufacturing a light emitting device package according to claim 1, further comprising bonding a hemispherical lens (Lens) on the package body. The method according to claim 10 or 11, wherein After the molding step, The method of manufacturing a light emitting device package, characterized in that for performing a further step of bending the pair of leads, respectively.

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