KR20070092109A - 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 - Google Patents

실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 Download PDF

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Publication number
KR20070092109A
KR20070092109A KR1020070020879A KR20070020879A KR20070092109A KR 20070092109 A KR20070092109 A KR 20070092109A KR 1020070020879 A KR1020070020879 A KR 1020070020879A KR 20070020879 A KR20070020879 A KR 20070020879A KR 20070092109 A KR20070092109 A KR 20070092109A
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South Korea
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composition
polyvinylpyrrolidone
gen
mol
weight
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KR1020070020879A
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English (en)
Korean (ko)
Inventor
사라 제이. 레인
찰스 유
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication of KR20070092109A publication Critical patent/KR20070092109A/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020070020879A 2006-03-08 2007-03-02 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 KR20070092109A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
US11/372,321 2006-03-08

Publications (1)

Publication Number Publication Date
KR20070092109A true KR20070092109A (ko) 2007-09-12

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ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070020879A KR20070092109A (ko) 2006-03-08 2007-03-02 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물

Country Status (7)

Country Link
US (1) US20070210278A1 (US20070210278A1-20070913-C00001.png)
JP (1) JP2007273973A (US20070210278A1-20070913-C00001.png)
KR (1) KR20070092109A (US20070210278A1-20070913-C00001.png)
CN (1) CN101054498A (US20070210278A1-20070913-C00001.png)
DE (1) DE102007008997A1 (US20070210278A1-20070913-C00001.png)
FR (1) FR2898361A1 (US20070210278A1-20070913-C00001.png)
TW (1) TW200736375A (US20070210278A1-20070913-C00001.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110076969A (ko) * 2008-09-26 2011-07-06 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
KR20170054397A (ko) * 2014-09-12 2017-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 연마조성물 및 연마방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
EP2500929B1 (en) * 2009-11-11 2018-06-20 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JPWO2016158648A1 (ja) * 2015-03-30 2018-03-01 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
EP3394879A2 (en) * 2015-12-22 2018-10-31 Basf Se Composition for post chemical-mechanical-polishing cleaning
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US10954411B2 (en) * 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110076969A (ko) * 2008-09-26 2011-07-06 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
KR20170054397A (ko) * 2014-09-12 2017-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 연마조성물 및 연마방법

Also Published As

Publication number Publication date
JP2007273973A (ja) 2007-10-18
TW200736375A (en) 2007-10-01
CN101054498A (zh) 2007-10-17
DE102007008997A1 (de) 2007-09-13
US20070210278A1 (en) 2007-09-13
FR2898361A1 (fr) 2007-09-14

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