KR20070072201A - In plane switching mode liquid crystal display device - Google Patents

In plane switching mode liquid crystal display device Download PDF

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KR20070072201A
KR20070072201A KR1020050136198A KR20050136198A KR20070072201A KR 20070072201 A KR20070072201 A KR 20070072201A KR 1020050136198 A KR1020050136198 A KR 1020050136198A KR 20050136198 A KR20050136198 A KR 20050136198A KR 20070072201 A KR20070072201 A KR 20070072201A
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electrode
liquid crystal
electric field
crystal display
display device
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KR1020050136198A
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Korean (ko)
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황정임
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엘지.필립스 엘시디 주식회사
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Priority to KR1020050136198A priority Critical patent/KR20070072201A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

Abstract

An IPS(In Plane Switching) mode LCD(Liquid Crystal Display) is provided to form the electric field within a liquid crystal layer in parallel to a substrate completely. Plural gate lines and data lines define plural pixels. A TFT(Thin Film Transistor) is formed at each pixel. The first and second electrodes are substantially arrayed in parallel to each pixel and form the horizontal electric field. The thickness of the first and second electrodes is substantially the same as that of a cell gap. The first and second electrodes are a common electrode(105) and a pixel electrode(107). The first line is electrically connected with the first electrode. The second line is electrically connected with the second electrode and forms the storage capacitance together with the first line. The first and second electrodes are formed by ITO(Indium Tin Oxide) or IZO(Indium Zinc Oxide).

Description

횡전계모드 액정표시소자{IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}Transverse electric field mode liquid crystal display device {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE}

도 1은 종래 횡전계모드 액정표시소자의 평면도.1 is a plan view of a conventional transverse electric field mode liquid crystal display device.

도 2는 도 1의 I-I'선 단면도.2 is a cross-sectional view taken along line II ′ of FIG. 1.

도 3은 본 발명에 따른 횡전계모드 액정표시소자의 평면도.3 is a plan view of a transverse electric field mode liquid crystal display device according to the present invention.

도 4는 도 2의 II-II'선 단면도.4 is a cross-sectional view taken along the line II-II ′ of FIG. 2.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

101 : 액정패널 103 : 게이트라인101: liquid crystal panel 103: gate line

104 : 데이터라인 105 : 공통전극104: data line 105: common electrode

107 : 화소전극 110 : 박막트랜지스터107: pixel electrode 110: thin film transistor

116 : 공통라인 118 : 화소전극라인116: common line 118: pixel electrode line

120,130 : 기판 122 : 게이트절연층120,130: substrate 122: gate insulating layer

124 : 보호층 132 : 블랙매트릭스124: protective layer 132: black matrix

134 : 컬러필터층 140 : 액정층134: color filter layer 140: liquid crystal layer

본 발명은 액정표시소자에 관한 것으로, 특히 액정층내의 전계를 기판과 완전하게 평행하게 형성하여 전계 왜곡에 의한 휘도저하를 방지할 수 있는 횡전계모드 액정표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a transverse electric field mode liquid crystal display device capable of forming an electric field in the liquid crystal layer completely parallel to the substrate to prevent a decrease in luminance due to electric field distortion.

근래, 핸드폰(Mobile Phone), PDA, 노트북컴퓨터와 같은 각종 휴대용 전자기기가 발전함에 따라 이에 적용할 수 있는 경박단소용의 평판표시장치(Flat Panel Display Device)에 대한 요구가 점차 증대되고 있다. 이러한 평판표시장치로는 LCD(Liquid Crystal Display), PDP(Plasma Display Panel), FED(Field Emission Display), VFD(Vacuum Fluorescent Display) 등이 활발히 연구되고 있지만, 양산화 기술, 구동수단의 용이성, 고화질의 구현이라는 이유로 인해 현재에는 액정표시소자(LCD)가 각광을 받고 있다.Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

이러한 액정표시소자는 액정분자의 배열에 따라 다양한 표시모드가 존재하지만, 현재에는 흑백표시가 용이하고 응답속도가 빠르며 구동전압이 낮다는 장점 때문에 주로 TN모드의 액정표시소자가 사용되고 있다. 이러한 TN모드 액정표시소자에서는 기판과 수평하게 배향된 액정분자가 전압이 인가될 때 기판과 거의 수직으로 배향된다. 따라서, 액정분자의 굴절율 이방성(refractive anisotropy)에 의해 전압의 인가시 시야각이 좁아진다는 문제가 있었다.The liquid crystal display device has various display modes according to the arrangement of the liquid crystal molecules. However, the liquid crystal display device of the TN mode is mainly used because of the advantages of easy monochrome display, fast response speed, and low driving voltage. In such a TN mode liquid crystal display device, liquid crystal molecules aligned horizontally with the substrate are almost perpendicular to the substrate when a voltage is applied. Therefore, there is a problem that the viewing angle is narrowed upon application of voltage due to the refractive anisotropy of the liquid crystal molecules.

이러한 시야각문제를 해결하기 위해, 근래 광시야각특성(wide viewing angle characteristic)을 갖는 각종 모드의 액정표시소자가 제안되고 있지만, 그중에서도 횡전계모드(In Plane Switching Mode)의 액정표시소자가 실제 양산에 적용되어 생산되고 있다. 상기 횡전계모드 액정표시소자는 화소내에 평행으로 배열된 적어도 한쌍의 전극을 형성하여 기판과 실질적으로 평행한 횡전계를 형성함으로써 액정분자를 평면상으로 배향시키는 것이다.In order to solve this viewing angle problem, liquid crystal display devices of various modes having wide viewing angle characteristics have recently been proposed, but among them, the liquid crystal display device of the lateral field mode (In Plane Switching Mode) is applied to actual production. It is produced. The transverse electric field mode liquid crystal display device aligns liquid crystal molecules in a plane by forming at least one pair of electrodes arranged in parallel in a pixel to form a transverse electric field substantially parallel to the substrate.

도 1은 종래 횡전계모드 액정표시소자의 구조를 나타내는 평면도이다. 도 1에 도시된 바와 같이, 액정패널(1)의 화소는 종횡으로 배치된 게이트라인(3) 및 데이터라인(4)에 의해 정의된다. 도면에는 비록 (n,m)번째의 화소만을 도시하고 있지만 실제의 액정패널(1)에는 상기한 게이트라인(3)과 데이터라인(4)이 각각 n개 및 m개 배치되어 액정패널(1) 전체에 걸쳐서 n×m개의 화소를 형성한다. 상기 화소내의 게이트라인(3)과 데이터라인(4)의 교차영역에는 박막트랜지스터(10)가 형성되어 있다. 상기 박막트랜지스터(10)는 게이트라인(3)으로부터 주사신호가 인가되는 게이트전극(11)과, 상기 게이트전극(11) 위에 형성되어 주사신호가 인가됨에 따라 활성화되어 채널층을 형성하는 반도체층(12)과, 상기 반도체층(12) 위에 형성되어 데이터라인(4)을 통해 화상신호가 인가되는 소스전극(13) 및 드레인전극(14)으로 구성되어 외부로부터 입력되는 화상신호를 액정층에 인가한다.1 is a plan view showing the structure of a conventional transverse electric field mode liquid crystal display device. As shown in FIG. 1, pixels of the liquid crystal panel 1 are defined by gate lines 3 and data lines 4 arranged vertically and horizontally. Although only the (n, m) th pixels are shown in the drawing, in the liquid crystal panel 1, n and m gate lines 3 and data lines 4 are disposed, respectively, and thus the liquid crystal panel 1 is disposed. N x m pixels are formed throughout. The thin film transistor 10 is formed at the intersection of the gate line 3 and the data line 4 in the pixel. The thin film transistor 10 includes a gate electrode 11 to which a scan signal is applied from the gate line 3, and a semiconductor layer formed on the gate electrode 11 and activated as a scan signal is applied to form a channel layer. 12 and a source electrode 13 and a drain electrode 14 formed on the semiconductor layer 12 and to which an image signal is applied through the data line 4. The image signal input from the outside is applied to the liquid crystal layer. do.

화소내에는 데이터라인(4)과 실질적으로 평행하게 배열된 복수의 공통전극(5)과 화소전극(7)이 배치되어 있다. 또한, 화소의 상부영역에는 상기 공통전극(5)과 접속되는 공통라인(16)이 배치되어 있으며, 상기 공통라인(16) 위에는 화소전극(7)과 접속되는 화소전극라인(18)이 배치되어 상기 공통라인(16)과 오버랩되어 있다. 상기 공통라인(16)과 화소전극라인(18)의 오버랩에 의해 횡전계모드 액정표시소자에는 축적용량(storage capacitance)이 형성된다.In the pixel, a plurality of common electrodes 5 and a pixel electrode 7 are arranged substantially parallel to the data line 4. In addition, a common line 16 connected to the common electrode 5 is disposed in an upper region of the pixel, and a pixel electrode line 18 connected to the pixel electrode 7 is disposed on the common line 16. It overlaps with the common line 16. Storage capacitance is formed in the transverse electric field mode liquid crystal display by overlapping the common line 16 and the pixel electrode line 18.

상기와 같이 구성된 횡전계모드 액정표시소자에서 액정분자는 공통전극(5) 및 화소전극(7)과 실질적으로 평행하게 배향되어 있다. 박막트랜지스터(10)가 작동하여 화소전극(7)에 신호가 인가되면, 공통전극(5)과 화소전극(7) 사이에는 액정패널(1)과 실질적으로 평행한 횡전계가 발생하게 된다. 액정분자는 상기 횡전계를 따라 동일 평면상에서 회전하게 되므로, 액정분자의 굴절율 이방성에 의한 계조반전을 방지할 수 있게 된다.In the transverse electric field mode liquid crystal display device configured as described above, the liquid crystal molecules are aligned substantially in parallel with the common electrode 5 and the pixel electrode 7. When the thin film transistor 10 is operated to apply a signal to the pixel electrode 7, a transverse electric field substantially parallel to the liquid crystal panel 1 is generated between the common electrode 5 and the pixel electrode 7. Since the liquid crystal molecules rotate on the same plane along the transverse electric field, gray level inversion due to the refractive anisotropy of the liquid crystal molecules can be prevented.

상기한 구조의 종래 횡전계모드 액정표시소자를 도 1의 I-I'선 단면도인 도 2를 참조하여 더욱 상세히 설명하면 다음과 같다.A conventional transverse electric field mode liquid crystal display device having the above-described structure will be described in more detail with reference to FIG.

도 2에 도시된 바와 같이, 제1기판(20) 위에는 게이트전극(11)이 형성되어 있으며, 상기 제1기판(20) 전체에 걸쳐 게이트절연층(22)이 적층되어 있다. 상기 게이트절연층(22) 위에는 반도체층(12)이 형성되어 있으며, 그 위에 소스전극(13) 및 드레인전극(14)이 형성되어 있다. 또한, 상기 제1기판(20) 전체에 걸쳐 보호층(passivation layer;24)이 형성되어 있다.As shown in FIG. 2, a gate electrode 11 is formed on the first substrate 20, and a gate insulating layer 22 is stacked over the entire first substrate 20. The semiconductor layer 12 is formed on the gate insulating layer 22, and the source electrode 13 and the drain electrode 14 are formed thereon. In addition, a passivation layer 24 is formed on the entire first substrate 20.

또한, 상기 제1기판(20) 위에는 금속으로 이루어진 복수의 공통전극(5)이 형성되어 있고 게이트절연층(22) 위에는 금속으로 이루어진 화소전극(7) 및 데이터라인(4)이 형성되어, 상기 공통전극(5)과 화소전극(7) 사이에 횡전계(E)가 발생한다.In addition, a plurality of common electrodes 5 made of metal are formed on the first substrate 20, and pixel electrodes 7 and data lines 4 made of metal are formed on the gate insulating layer 22. The transverse electric field E is generated between the common electrode 5 and the pixel electrode 7.

제2기판(30)에는 블랙매트릭스(32)와 컬러필터층(34)이 형성되어 있다. 상기 블랙매트릭스(32)는 액정분자가 동작하지 않는 영역으로 광이 누설되는 것을 방지하기 위한 것으로, 도면에 도시한 바와 같이 박막트랜지스터(10) 영역 및 화소와 화소 사이(즉, 게이트라인 및 데이터라인 영역)에 주로 형성된다. 컬러필터층(34)은 R(Red), B(Blue), G(Green)로 구성되어 실제 컬러를 구현하기 위한 것이다.The black matrix 32 and the color filter layer 34 are formed on the second substrate 30. The black matrix 32 is to prevent light leakage into an area where the liquid crystal molecules do not operate. As shown in the drawing, the black matrix 32 is formed between the region of the thin film transistor 10 and between the pixel and the pixel (ie, the gate line and the data line). Area). The color filter layer 34 is composed of R (Red), B (Blue), and G (Green) to realize actual colors.

상기 제1기판(20) 및 제2기판(30) 사이에는 액정층(40)이 형성되어 액정패널(1)이 완성된다.The liquid crystal layer 40 is formed between the first substrate 20 and the second substrate 30 to complete the liquid crystal panel 1.

상기한 바와 같이, 횡전계모드 액정표시소자에서는 기판(20)과 게이트절연층(22)에 각각 형성된 공통전극(5)과 화소전극(7)에 의해 액정층(40) 내부에 횡전계(E)가 발생하여 액정층(40) 내부의 액정분자가 기판의 표면과 평행하게 구동한다.As described above, in the transverse electric field mode liquid crystal display device, the transverse electric field E is formed inside the liquid crystal layer 40 by the common electrode 5 and the pixel electrode 7 formed on the substrate 20 and the gate insulating layer 22, respectively. ) Is generated to drive the liquid crystal molecules inside the liquid crystal layer 40 in parallel with the surface of the substrate.

그런데, 상기와 같은 구조의 횡전계모드 액정표시소자에서는 다음과 같은 문제가 발생한다. 도 2에 도시된 바와 같이, 공통전극(5)과 화소전극(7)은 각각 제1기판(20)과 게이트절연층(22) 위에 형성된다. 따라서, 실제 공통전극(5)과 화소전극(7) 사이에 형성되는 횡전계(E)는 기판(20)과 완전히 평행하게 되지는 않는다. 즉, 공통전극(5)과 화소전극(7) 상부 및 그 측면, 즉 도면에서 A영역의 전계는 기판(20)의 표면과 완전하게 평행하지 않게 된다. 따라서, 상기 A영역에서는 전계(E)를 따라 배열되는 액정분자가 기판(20)의 표면과 완전하게 평행하지 되지 않고 경사져서 배열되기 때문에, 상기 A영역으로 빛이 새는 빛샘현상이 발생하게 되어 화질이 저하되는 원인이 된다. 또한, 상기 A영역에서의 광투과율이 저하되기 때문에, 액정표시소자 전체적으로 휘도가 저하되는 문제도 있었다.However, the following problem occurs in the transverse electric field mode liquid crystal display device having the above structure. As shown in FIG. 2, the common electrode 5 and the pixel electrode 7 are formed on the first substrate 20 and the gate insulating layer 22, respectively. Therefore, the transverse electric field E formed between the actual common electrode 5 and the pixel electrode 7 does not become completely parallel to the substrate 20. That is, the electric field of the common electrode 5 and the pixel electrode 7 and its side surfaces, that is, the region A in the drawing, is not completely parallel to the surface of the substrate 20. Therefore, in the region A, since the liquid crystal molecules arranged along the electric field E are arranged at an angle, not completely parallel to the surface of the substrate 20, light leakage occurs in the region A, resulting in image quality. This causes a decrease. In addition, since the light transmittance in the area A is lowered, there is a problem that the luminance of the entire liquid crystal display element is lowered.

본 발명은 상기한 문제를 해결하기 위한 것으로, 횡전계를 형성하는 공통전극과 화소전극을 액정패널의 셀갭과 거의 동일하게 형성하여 빛샘현상을 방지하고 휘도가 저하되는 것을 방지할 수 있는 횡전계모드 액정표시소자를 제공하는 것을 목적으로 한다.The present invention is to solve the above problems, the common electrode and the pixel electrode to form a transverse electric field is formed almost the same as the cell gap of the liquid crystal panel transverse electric field mode that can prevent light leakage phenomenon and prevent the brightness is lowered It is an object to provide a liquid crystal display device.

상기한 목적을 달성하기 위해, 본 발명에 따른 횡전계모드 액정표시소자는 복수의 화소를 정의하는 복수의 게이트라인 및 데이터라인와, 각각의 화소에 형성된 박막트랜지스터와, 각각의 화소에 실질적으로 평행하게 배열되어 횡전계를 형성하며, 두께가 셀갭과 실질적으로 동일한 적어도 하나의 제1전극 및 제2전극으로 구성된다.In order to achieve the above object, the transverse electric field mode liquid crystal display device according to the present invention includes a plurality of gate lines and data lines defining a plurality of pixels, a thin film transistor formed in each pixel, and substantially parallel to each pixel. Arranged to form a transverse electric field, the thickness being comprised of at least one first electrode and a second electrode that are substantially equal to the cell gap.

상기 제1전극 및 제2전극은 ITO(Indium Tin Oxide) 또는 IZO(Indium Zinc Oxide)와 같은 투명한 도전물질로 이루어지며, 제1전극은 보호층 및 게이트절연층에 형성된 제1컨택홀을 통해 제1라인과 연결되고 제2전극은 보호층에 형성된 제2컨택홀을 통해 제2라인과 연결되어 제1라인과 제2라인 사이에 축적용량을 형성한다.The first electrode and the second electrode are made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the first electrode is formed through the first contact hole formed in the protective layer and the gate insulating layer. The second electrode is connected to the first line and is connected to the second line through the second contact hole formed in the passivation layer to form a storage capacitor between the first line and the second line.

본 발명에서는 횡전계의 왜곡이 없는 횡전계모드 액정표시소자를 제공한다. 다시 말해서, 액정층 전체에 걸쳐서, 그리고 기판 전체에 걸쳐서 기판의 표면과 실질적으로 평행한 횡전계를 형성하는 횡전계모드 액정표시소자를 제공하는 것이다. 이를 위해, 본 발명에서는 횡전계를 형성하는 공통전극과 화소전극의 두께를 종래에 비해 크게 한다. 종래에는 평행하게 배치된 공통전극과 화소전극의 상부 표면 사이에 전계가 형성되기 때문에, 전극의 표면과 측면의 전계가 경사지지만, 본 발명에서는 공통전극과 화소전극의 두께를 증가하여 전극의 측면 사이에서 전계를 형성하므로 전계의 왜곡을 방지할 수 있게 된다.The present invention provides a transverse electric field mode liquid crystal display without distortion of the transverse electric field. In other words, there is provided a transverse electric field mode liquid crystal display device which forms a transverse electric field substantially parallel to the surface of the substrate over the entire liquid crystal layer and over the entire substrate. To this end, in the present invention, the thickness of the common electrode and the pixel electrode forming the transverse electric field is increased as compared with the related art. Conventionally, since an electric field is formed between the common electrode arranged in parallel and the upper surface of the pixel electrode, the electric field of the surface and the side of the electrode is inclined, but in the present invention, the thickness of the common electrode and the pixel electrode is increased to increase the thickness between the side of the electrode. Since the electric field is formed at, the distortion of the electric field can be prevented.

이하, 첨부한 도면을 참조하여 본 발명에 따른 횡전계모드 액정표시소자를 상세히 설명한다.Hereinafter, the transverse electric field mode liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 횡전계모드 액정표시소자를 나타내는 도면이다3 is a view showing a transverse electric field mode liquid crystal display device according to the present invention;

도 3에 도시된 바와 같이, 본 발명에 따른 횡전계모드 액정표시소자는 종횡으로 배치되어 복수의 화소를 정의하는 복수의 게이트라인(103) 및 데이터라인(104)과, 상기 화소내의 게이트라인(103)과 데이터라인(104)의 교차영역에 배치되는 박막트랜지스터(110)와, 상기 화소내에 실질적으로 평행하게 배치되어 기판의 표면과 실질적으로 평행한 횡전계를 형성하는 공통전극(105) 및 화소전극(107)으로 구성된다.As shown in FIG. 3, the transverse electric field mode liquid crystal display device according to the present invention includes a plurality of gate lines 103 and data lines 104 arranged vertically and horizontally to define a plurality of pixels, and a gate line in the pixels. 103 and the thin film transistor 110 disposed at the intersection of the data line 104 and the common electrode 105 and the pixel which are disposed substantially parallel in the pixel to form a transverse electric field substantially parallel to the surface of the substrate. It consists of an electrode 107.

상기 박막트랜지스터(110)는 게이트라인(103)으로부터 주사신호가 인가되는 게이트전극(111)과, 상기 게이트전극(111) 위에 형성되어 게이트라인(103)을 통해 주사신호가 인가됨에 따라 활성화되어 채널층을 형성하는 반도체층(112)과, 상기 반도체층(112) 위에 형성되어 데이터라인(104)을 통해 인가되는 화상신호를 화소전극(107)으로 입력하는 소스전극(113) 및 드레인전극(114)으로 구성된다.The thin film transistor 110 is formed on the gate electrode 111 to which the scan signal is applied from the gate line 103, and is formed on the gate electrode 111 to be activated as the scan signal is applied through the gate line 103. A source electrode 113 and a drain electrode 114 for forming a semiconductor layer 112 forming a layer and an image signal formed on the semiconductor layer 112 and applied through the data line 104 to the pixel electrode 107. It is composed of

화소내에는 공통전극(105)과 전기적으로 연결되는 공통라인(116) 및 화소전극(107)과 전기적으로 연결되는 화소전극라인(118)이 배치되어 있다. 이때, 상기 상기 공통라인(116)과 화소전극라인(118)은 서로 다른 층, 즉 절연층을 사이에 두고 배치되어 축적용량을 형성한다.The common line 116 electrically connected to the common electrode 105 and the pixel electrode line 118 electrically connected to the pixel electrode 107 are disposed in the pixel. In this case, the common line 116 and the pixel electrode line 118 are disposed with different layers, that is, insulating layers, to form a storage capacitor.

또한, 상기 공통전극(105)은 제1컨택홀(117)을 통해 공통라인(116)과 연결되고 화소전극(107)은 제2컨택홀(119)을 통해 화소전극라인(118)에 연결된다. 도면에서는 비록 각각의 화소전극(107)이 별개로 형성되어 2개의 제2컨택홀(119)를 통해 화소전극라인(118)에 연결되지만, 각각의 화소전극(107)이 일체로 형성되어 하나의 제2컨택홀(119)에 의해 화소전극라인(118)에 연결될 수도 있을 것이다. 또한, 제1컨택홀(117)도 한개만 형성될 수도 있고 복수개 형성될 수 있을 것이다.In addition, the common electrode 105 is connected to the common line 116 through the first contact hole 117 and the pixel electrode 107 is connected to the pixel electrode line 118 through the second contact hole 119. . In the drawing, although each pixel electrode 107 is formed separately and connected to the pixel electrode line 118 through two second contact holes 119, each pixel electrode 107 is integrally formed to form a single one. It may be connected to the pixel electrode line 118 by the second contact hole 119. In addition, only one first contact hole 117 may be formed or a plurality of first contact holes 117 may be formed.

상기와 같이 구성된 횡전계모드 액정표시소자에서 액정분자는 공통전극(105) 및 화소전극(107)과 실질적으로 평행하게 배열된다. 박막트랜지스터(110)가 작동하여 화소전극(107)에 신호가 인가되면, 공통전극(105)과 화소전극(107) 사이에는 액정패널(101)과 실질적으로 평행한 횡전계가 발생하게 된다. 액정분자는 상기 횡전계를 따라 동일 평면상에서 회전하게 되므로, 액정분자의 굴절율 이방성에 의한 계조반전을 방지할 수 있게 된다.In the transverse electric field mode liquid crystal display device configured as described above, the liquid crystal molecules are arranged substantially parallel to the common electrode 105 and the pixel electrode 107. When the thin film transistor 110 operates to apply a signal to the pixel electrode 107, a transverse electric field substantially parallel to the liquid crystal panel 101 is generated between the common electrode 105 and the pixel electrode 107. Since the liquid crystal molecules rotate on the same plane along the transverse electric field, gray level inversion due to the refractive anisotropy of the liquid crystal molecules can be prevented.

도 4는 도 3의 II-II'선 단면도로서, 이를 참조하여 본 발명에 따른 횡전계모드 액정표시소자에 대해 더욱 상세히 설명한다.4 is a cross-sectional view taken along the line II-II ′ of FIG. 3, and the lateral field mode liquid crystal display device according to the present invention will be described in more detail with reference to this.

도 4 도시된 바와 같이, 제1기판(120) 위에는 게이트전극(111)이 형성되어 있으며, 상기 제1기판(120) 전체에 걸쳐 게이트절연층(122)이 적층되어 있다. 상기 게이트절연층(122) 위에는 반도체층(112)이 형성되어 있으며, 그 위에 소스전극(113) 및 드레인전극(114)이 형성되어 있다. 또한, 상기 제1기판(120) 전체에 걸쳐 보호층(passivation layer;24)이 형성되어 있다.As shown in FIG. 4, the gate electrode 111 is formed on the first substrate 120, and the gate insulating layer 122 is stacked on the entire first substrate 120. The semiconductor layer 112 is formed on the gate insulating layer 122, and a source electrode 113 and a drain electrode 114 are formed thereon. In addition, a passivation layer 24 is formed on the entire first substrate 120.

상기 게이트절연층(122)위에는 데이터라인(104)이 형성되어 있으며, 상기 보호층(124) 위에는 복수의 공통전극(105) 및 화소전극이 형성되어 있어, 상기 공통전극(105)과 화소전극(107) 사이에 횡전계(E)가 발생한다. 이때, 공통전극(105)과 화소전극(107)은 각각 ITO(Indium Tin Oxide)나 IZO(Indium Zinc Oxide)와 같은 투명한 도전물질을 적층하고 패터닝함으로써 형성되는데, 그 두께는 액정패널(101)의 셀갭과 거의 동일하게 형성된다. 즉, 상기 공통전극(105) 및 화소전극(107)은 수㎛로 형성되는 것이다.The data line 104 is formed on the gate insulating layer 122, and a plurality of common electrodes 105 and pixel electrodes are formed on the passivation layer 124, so that the common electrode 105 and the pixel electrode ( A transverse electric field E occurs between 107. In this case, the common electrode 105 and the pixel electrode 107 are formed by stacking and patterning a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), respectively. It is formed almost the same as the cell gap. That is, the common electrode 105 and the pixel electrode 107 are formed to have a few μm.

또한, 도면에는 도시되지 않았지만, 상기 제1기판(120) 위에는 공통전극라인(116)이 형성되어 상기 게이트절연층(122) 및 보호층(124)에 형성된 제1컨택홀(117)을 통해 공통전극(105)과 전기적으로 연결된다. 또한, 게이트절연층(122) 위에는 화소전극라인(118)은 보호층(124)에 형성된 제2컨택홀(119)를 통해 화소전극(118)과 전기적으로 연결되어 박막트랜지스터(110)를 통해 입력되는 화상신호가 화소전극(118)에 인가된다. 이와 같이, 공통라인(116)과 화소전극(118) 사이에는 게이트절연층(122)이 위치하게 되어 축적용량이 형성되는 것이다.Although not shown in the drawing, a common electrode line 116 is formed on the first substrate 120 to be common through the first contact hole 117 formed in the gate insulating layer 122 and the protective layer 124. It is electrically connected with the electrode 105. In addition, on the gate insulating layer 122, the pixel electrode line 118 is electrically connected to the pixel electrode 118 through the second contact hole 119 formed in the protective layer 124 and input through the thin film transistor 110. The resulting image signal is applied to the pixel electrode 118. As such, the gate insulating layer 122 is positioned between the common line 116 and the pixel electrode 118 to form a storage capacitor.

제2기판(130)에는 블랙매트릭스(132)와 컬러필터층(134)이 형성되어 있다. 상기 블랙매트릭스(132)는 액정분자가 동작하지 않는 영역으로 광이 누설되는 것을 방지하기 위한 것으로, 도면에 도시한 바와 같이 박막트랜지스터(110) 영역 및 화소와 화소 사이(즉, 게이트라인 및 데이터라인 영역)에 주로 형성된다. 컬러필터층(134)은 R(Red), B(Blue), G(Green)로 구성되어 실제 컬러를 구현하기 위한 것이다.The black matrix 132 and the color filter layer 134 are formed on the second substrate 130. The black matrix 132 is to prevent light leakage into an area in which the liquid crystal molecules do not operate. As shown in the drawing, the black matrix 132 is between the region of the thin film transistor 110 and the pixel and the pixel (ie, the gate line and the data line). Area). The color filter layer 134 is composed of R (Red), B (Blue), and G (Green) to realize actual colors.

상기 제1기판(120) 및 제2기판(130) 사이에는 액정층(140)이 형성되어 액정패널(101)이 완성된다.The liquid crystal layer 140 is formed between the first substrate 120 and the second substrate 130 to complete the liquid crystal panel 101.

상기한 바와 같이, 본 발명에서는 횡전계(E)를 형성하는 공통전극(105) 및 화소전극(107)이 셀갭과 거의 동일한 두께로 형성되므로, 화소전극(107)에 화상신호가 인가되는 경우, 액정층(140) 전체에 걸쳐 기판(120)의 표면과 완전히 수평한 횡전계(E)가 형성된다. 더욱이, 본 발명에서는 공통전극(105) 및 화소전극(107)이 동일층(즉, 보호층) 위에 형성되므로 액정층(140)에 수평한 전계(E)를 인가할 수 있게 된다. 따라서, 액정분자가 상기 횡전계(E)를 따라 배열할 때, 액정분자는 기판(120)의 표면과 완전하게 수평하게 되어 빛샘현상을 제거할 수 있게 된다. 또한, 액정분자의 인가되는 화상신호에 따라 액정층 전체에 걸쳐서 동일한 방향으로 배열되므로, 광투과율이 저하되는 것을 방지할 수 있게 된다.As described above, in the present invention, since the common electrode 105 and the pixel electrode 107 forming the transverse electric field E are formed to have almost the same thickness as the cell gap, when an image signal is applied to the pixel electrode 107, A transverse electric field E that is completely horizontal to the surface of the substrate 120 is formed over the entire liquid crystal layer 140. Furthermore, in the present invention, since the common electrode 105 and the pixel electrode 107 are formed on the same layer (that is, a protective layer), the horizontal electric field E can be applied to the liquid crystal layer 140. Therefore, when the liquid crystal molecules are arranged along the transverse electric field E, the liquid crystal molecules are completely horizontal to the surface of the substrate 120 to remove light leakage. In addition, since the liquid crystal molecules are arranged in the same direction over the entire liquid crystal layer in accordance with the applied image signal, the light transmittance can be prevented from being lowered.

한편, 상기한 본 발명의 설명에서는 특정한 구조의 횡전계모드 액정표시소자를 설명했지만 본 발명의 이러한 구조에 한정되는 것은 아니다. 예를 들어, 화소내에 다양한 갯수의 공통전극과 화소전극를 배치하는 것은 본 발명에 포함될 것이다. 또한, 상술한 설명에서는 공통전극 및 화소전극이 일자형태로 배열되어 있지만, 일회 이상 절곡되어(즉, 지그재그로 형성되어) 화소를 복수의 도메인으로 분할하여 시야각특성을 향상시키는 구조도 본 발명에 포함되어야만 할 것이다. 그리고, 공통전극 및 화소전극이 투명한 도전물질로만 형성하는 것이 아니라 불투명한 금속으로 형성할 수도 있을 것이다.On the other hand, in the above description of the present invention, the transverse electric field mode liquid crystal display device having a specific structure has been described, but is not limited to this structure of the present invention. For example, arrangement of various numbers of common electrodes and pixel electrodes in a pixel will be included in the present invention. In addition, although the common electrode and the pixel electrode are arranged in a straight line in the above description, the present invention also includes a structure in which the pixel is divided into a plurality of domains by being bent one or more times (ie, zigzag) to improve the viewing angle characteristic. It must be. In addition, the common electrode and the pixel electrode may be formed of an opaque metal instead of only a transparent conductive material.

따라서, 본 발명의 권리범위는 상기한 발명의 상세한 설명에 의해 결정되는 것이 아니라 첨부하는 특허청구범위에 의해 결정되어야만 할 것이다.Accordingly, the scope of the present invention should be determined not by the detailed description of the invention but by the appended claims.

상술한 바와 같이, 본 발명에서는 공통전극 및 화소전극이 동일층에 셀갭과 실질적으로 동일한 높이로 형성되므로, 액정층 전체에 걸쳐 기판의 표면과 실질적으로 평행한 횡전계가 형성된다. 따라서, 전계의 왜곡에 의한 빛샘이나 휘도 저하 를 효과적으로 방지할 수 있게 된다. 더욱이, 본 발명에서는 공통전극 및 화소전극을 투명한 도전물질로 형성하므로 휘도를 더욱 향상시킬 수 있게 된다.As described above, in the present invention, since the common electrode and the pixel electrode are formed at substantially the same height as the cell gap in the same layer, a transverse electric field substantially parallel to the surface of the substrate is formed over the entire liquid crystal layer. Therefore, it is possible to effectively prevent light leakage and luminance decrease due to distortion of the electric field. Furthermore, in the present invention, since the common electrode and the pixel electrode are formed of a transparent conductive material, luminance can be further improved.

Claims (10)

복수의 화소를 정의하는 복수의 게이트라인 및 데이터라인;A plurality of gate lines and data lines defining a plurality of pixels; 각각의 화소에 형성된 박막트랜지스터; 및A thin film transistor formed in each pixel; And 각각의 화소에 실질적으로 평행하게 배열되어 횡전계를 형성하며, 두께가 셀갭과 실질적으로 동일한 적어도 하나의 제1전극 및 제2전극으로 구성된 횡전계모드 액정표시소자.A transverse electric field mode liquid crystal display device comprising at least one first electrode and a second electrode which are arranged substantially parallel to each pixel to form a transverse electric field, the thickness of which is substantially equal to the cell gap. 제1항에 있어서, 상기 제1전극 및 제2전극은 각각 공통전극 및 화소전극을 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.The transverse electric field mode liquid crystal display device of claim 1, wherein each of the first electrode and the second electrode comprises a common electrode and a pixel electrode. 제1항에 있어서,The method of claim 1, 상기 제1전극과 전기적으로 연결되는 제1라인; 및A first line electrically connected to the first electrode; And 상기 제2전극과 전기적으로 연결되어 제1라인과 축적용량을 형성하는 제2라인을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.And a second line electrically connected to the second electrode to form a first line and a storage capacitance. 제1항에 있어서, 상기 박막트랜지스터는,The method of claim 1, wherein the thin film transistor, 제1기판 위에 형성된 게이트전극;A gate electrode formed on the first substrate; 상기 제1기판 전체에 걸쳐 형성된 게이트절연층;A gate insulating layer formed over the entire first substrate; 상기 게이트절연층 위에 형성된 반도체층;A semiconductor layer formed on the gate insulating layer; 상기 반도체층 위에 형성된 소스전극 및 드레인전극; 및A source electrode and a drain electrode formed on the semiconductor layer; And 상기 소스전극 및 드레인전극 위에 형성된 보호층으로 이루어진 것을 특징으로 하는 횡전계모드 액정표시소자.And a protective layer formed on the source electrode and the drain electrode. 제4항에 있어서, 상기 제1전극 및 제2전극은 보호층 위에 형성된 것을 특징으로 하는 횡전계모드 액정표시소자.The transverse electric field mode liquid crystal display device of claim 4, wherein the first electrode and the second electrode are formed on a protective layer. 제5항에 있어서, 상기 제1전극 및 제2전극은 투명한 도전물질로 이루어진 것을 특징으로 하는 횡전계모드 액정표시소자.The transverse electric field mode liquid crystal display device of claim 5, wherein the first electrode and the second electrode are made of a transparent conductive material. 제6항에 있어서, 상기 제1전극 및 제2전극은 ITO(Indium Tin Oxide) 또는 IZO(Indium Zinc Oxide)로 이루어진 것을 특징으로 하는 횡전계모드 액정표시소자.The transverse electric field mode liquid crystal display device of claim 6, wherein the first electrode and the second electrode are made of indium tin oxide (ITO) or indium zinc oxide (IZO). 제4항에 있어서, 상기 제1라인은 제1기판에 형성되고 제2라인은 게이트절연층 위에 형성되는 것을 특징으로 하는 횡전계모드 액정표시소자.The transverse electric field liquid crystal display device of claim 4, wherein the first line is formed on a first substrate, and the second line is formed on a gate insulating layer. 제8항에 있어서, 상기 제1라인은 보호층 및 게이트절연층에 형성된 제1컨택홀을 통해 제1전극과 연결되고 제2라인은 보호층에 형성된 제2컨택홀을 통해 제2전극과 연결되는 것을 특징으로 하는 횡전계모드 액정표시소자.The method of claim 8, wherein the first line is connected to the first electrode through a first contact hole formed in the protective layer and the gate insulating layer, and the second line is connected to the second electrode through a second contact hole formed in the protective layer. Transverse electric field mode liquid crystal display device characterized in that. 제1항에 있어서,The method of claim 1, 제2기판에 형성된 블랙매트릭스;A black matrix formed on the second substrate; 제2기판에 형성된 컬러필터층; 및A color filter layer formed on the second substrate; And 제1기판 및 제2기판 사이에 형성된 액정층으로 이루어진 것을 특징으로 하는 횡전계모드 액정표시소자.A transverse electric field mode liquid crystal display device comprising a liquid crystal layer formed between a first substrate and a second substrate.
KR1020050136198A 2005-12-30 2005-12-30 In plane switching mode liquid crystal display device KR20070072201A (en)

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