KR20070046182A - 고출력 소면적의 3족-질화물계 발광 다이오드 - Google Patents

고출력 소면적의 3족-질화물계 발광 다이오드 Download PDF

Info

Publication number
KR20070046182A
KR20070046182A KR1020077006473A KR20077006473A KR20070046182A KR 20070046182 A KR20070046182 A KR 20070046182A KR 1020077006473 A KR1020077006473 A KR 1020077006473A KR 20077006473 A KR20077006473 A KR 20077006473A KR 20070046182 A KR20070046182 A KR 20070046182A
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
milliwatts
less
per unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020077006473A
Other languages
English (en)
Korean (ko)
Inventor
존 아담 에드몬드
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/951,042 external-priority patent/US7259402B2/en
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20070046182A publication Critical patent/KR20070046182A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020077006473A 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드 Ceased KR20070046182A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/951,042 2004-09-22
US10/951,042 US7259402B2 (en) 2004-09-22 2004-09-22 High efficiency group III nitride-silicon carbide light emitting diode
US11/037,965 US8513686B2 (en) 2004-09-22 2005-01-18 High output small area group III nitride LEDs
US11/037,965 2005-01-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020097017902A Division KR20090099593A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Publications (1)

Publication Number Publication Date
KR20070046182A true KR20070046182A (ko) 2007-05-02

Family

ID=35601712

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020077006473A Ceased KR20070046182A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드
KR1020097017902A Ceased KR20090099593A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020097017902A Ceased KR20090099593A (ko) 2004-09-22 2005-09-15 고출력 소면적의 3족-질화물계 발광 다이오드

Country Status (6)

Country Link
US (1) US8513686B2 (https=)
EP (1) EP1792353B1 (https=)
JP (1) JP2008514030A (https=)
KR (2) KR20070046182A (https=)
TW (1) TWI312584B (https=)
WO (1) WO2006036582A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100502062C (zh) 2003-04-30 2009-06-17 美商克立股份有限公司 具有小型光学元件的高功率发光器封装
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7842527B2 (en) * 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
EP1935007B1 (en) * 2005-09-16 2023-02-22 Wolfspeed, Inc. Methods of processing semiconductor wafers having silicon carbide power devices thereon
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
CN102437152A (zh) 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
US7846391B2 (en) * 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
US8643195B2 (en) 2006-06-30 2014-02-04 Cree, Inc. Nickel tin bonding system for semiconductor wafers and devices
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
US20080042145A1 (en) * 2006-08-18 2008-02-21 Helmut Hagleitner Diffusion barrier for light emitting diodes
US8425271B2 (en) 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US7855459B2 (en) 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
US9178121B2 (en) * 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709811B2 (en) * 2007-07-03 2010-05-04 Conner Arlie R Light emitting diode illumination system
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
TWI413453B (zh) * 2008-11-20 2013-10-21 Epistar Corp 交流發光二極體裝置
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US8242462B2 (en) 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8362458B2 (en) * 2010-12-27 2013-01-29 Industrial Technology Research Institute Nitirde semiconductor light emitting diode
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8967811B2 (en) 2012-01-20 2015-03-03 Lumencor, Inc. Solid state continuous white light source
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US10971612B2 (en) 2019-06-13 2021-04-06 Cree, Inc. High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
US10923585B2 (en) 2019-06-13 2021-02-16 Cree, Inc. High electron mobility transistors having improved contact spacing and/or improved contact vias
US11769768B2 (en) 2020-06-01 2023-09-26 Wolfspeed, Inc. Methods for pillar connection on frontside and passive device integration on backside of die
US12446252B2 (en) 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12009417B2 (en) 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
US12015075B2 (en) 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US11842937B2 (en) 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods
US12218202B2 (en) 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
US12557443B2 (en) 2022-06-01 2026-02-17 Creeled, Inc. Contact structures in light-emitting diode chips for reduced voiding of bonding metals
TWI887662B (zh) * 2022-06-01 2025-06-21 美商科銳Ｌｅｄ公司 用於減少接合金屬之空洞的發光二極體晶片中的接觸結構

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US465809A (en) * 1891-12-22 Electrical testing-instrument
US2001622A (en) 1930-10-27 1935-05-14 David G Mccaa Method of and means for reducing electrical disturbances
FR2554606B1 (fr) 1983-11-04 1987-04-10 Thomson Csf Dispositif optique de concentration du rayonnement lumineux emis par une diode electroluminescente, et diode electroluminescente comportant un tel dispositif
JPS6159886A (ja) 1984-08-31 1986-03-27 Fujitsu Ltd 光半導体装置の製造方法
JPH0770755B2 (ja) 1988-01-21 1995-07-31 三菱化学株式会社 高輝度ｌｅｄ用エピタキシャル基板及びその製造方法
US4912532A (en) 1988-08-26 1990-03-27 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
US5103271A (en) 1989-09-28 1992-04-07 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating the same
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5985687A (en) 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
TW393785B (en) 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JPH11238913A (ja) 1998-02-20 1999-08-31 Namiki Precision Jewel Co Ltd 半導体発光デバイスチップ
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3525061B2 (ja) 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
US6744800B1 (en) 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6320206B1 (en) 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6258699B1 (en) 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
US6465809B1 (en) 1999-06-09 2002-10-15 Kabushiki Kaisha Toshiba Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
US20020068373A1 (en) 2000-02-16 2002-06-06 Nova Crystals, Inc. Method for fabricating light emitting diodes
DE10008583A1 (de) 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips
US6335263B1 (en) 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
JP4060511B2 (ja) 2000-03-28 2008-03-12 パイオニア株式会社 窒化物半導体素子の分離方法
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US6410940B1 (en) 2000-06-15 2002-06-25 Kansas State University Research Foundation Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
DE10033496A1 (de) 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
DE10042947A1 (de) 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JP4091261B2 (ja) 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6468824B2 (en) 2001-03-22 2002-10-22 Uni Light Technology Inc. Method for forming a semiconductor device having a metallic substrate
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
JP2002368263A (ja) 2001-06-06 2002-12-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US6740906B2 (en) 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6924596B2 (en) 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US6716654B2 (en) 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
CA2489237A1 (en) 2002-06-13 2003-12-24 Cree, Inc. Semiconductor emitter comprising a saturated phosphor
CA2492249A1 (en) * 2002-07-22 2004-01-29 Cree, Inc. Light emitting diode including barrier layers and manufacturing methods therefor
US6649437B1 (en) 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
US6917057B2 (en) 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
US6825559B2 (en) 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
TWI226138B (en) 2003-01-03 2005-01-01 Super Nova Optoelectronics Cor GaN-based LED vertical device structure and the manufacturing method thereof
US6786390B2 (en) 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US6806112B1 (en) 2003-09-22 2004-10-19 National Chung-Hsing University High brightness light emitting diode
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
US20060060879A1 (en) 2006-03-23
TW200625690A (en) 2006-07-16
US8513686B2 (en) 2013-08-20
EP1792353A1 (en) 2007-06-06
TWI312584B (en) 2009-07-21
KR20090099593A (ko) 2009-09-22
JP2008514030A (ja) 2008-05-01
WO2006036582A1 (en) 2006-04-06
EP1792353B1 (en) 2020-03-11

Similar Documents

Publication Publication Date Title
US8513686B2 (en) High output small area group III nitride LEDs
CN100530713C (zh) 高输出小面积第ⅲ族氮化物led
US7737459B2 (en) High output group III nitride light emitting diodes
JP4101468B2 (ja) 発光装置の製造方法
TWI324834B (en) Phosphor-converted led devices having improved light distribution uniformity
JP5763913B2 (ja) 発光ダイオードのための反射性マウント基板
JP5237566B2 (ja) 発光素子パッケージ及びその製造方法
US8288942B2 (en) High efficacy white LED
US20060169993A1 (en) Micro-LED based high voltage AC/DC indicator lamp
KR101580739B1 (ko) 발광 장치
CN102386307A (zh) 具有对比面的led封装
WO2009099423A2 (en) Semiconductor light emitting devices with high color rendering
US8212262B2 (en) Transparent LED chip
KR101723540B1 (ko) 발광 소자 및 이를 갖는 발광 소자 패키지
TW202021155A (zh) 具有光散射調諧之發光器件以控制色彩偏移
KR102131309B1 (ko) 형광체 및 이를 포함하는 발광소자 패키지
CN202797078U (zh) Led封装和led显示器
Marioli Study of the reliability of power LEDs for color mixing applications
Simard-Normandin An Overview of LED Technology

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20070321

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20080313

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20090428

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20080313

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20090728

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20090428

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20101022

Appeal identifier: 2009101007036

Request date: 20090728

A107 Divisional application of patent
AMND Amendment
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20090827

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20090827

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20090728

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20081113

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
E801 Decision on dismissal of amendment
PB0601 Maintenance of original decision after re-examination before a trial

Comment text: Report of Result of Re-examination before a Trial

Patent event code: PB06011S01D

Patent event date: 20091005

PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20091005

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20090827

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20081113

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20090728

Effective date: 20101022

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20101022

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20090728

Decision date: 20101022

Appeal identifier: 2009101007036