KR20070042270A - Jig for aligning hale and the semiconductor manufacturing equipment used the same - Google Patents

Abstract

The present invention discloses a through hole alignment jig capable of increasing productivity, and a semiconductor manufacturing apparatus using the same. His jig includes a handle held in a worker's hand; A through bar extending from the handle and configured to pass through the plurality of through holes in a straight line; And a locking jaw formed between the through bar and the handle such that the handle is not inserted into the through hole while the through bar is inserted into the plurality of through holes. Since the plurality of through holes formed in the lower lower electrode are aligned in a straight line, it is possible to prevent expensive temperature sensor damage inserted through the aligned plurality of through holes, thereby improving productivity.

Jigs, holes, bars, locking jaws, electrostatic chucks (ESC)

Description

Jig for aligning hale and the semiconductor manufacturing equipment used the same

1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the present invention.

2 is an exploded perspective view of the electrostatic chuck and plasma electrode of FIG.

3 is a perspective view showing a through-hole alignment jig used to fasten the temperature sensor of FIG.

* Explanation of symbols for main parts of drawings *

100 chamber 112 shower head

114: electrostatic chuck 116: lower electrode

118: temperature sensor 120: through hole alignment jig

The present invention relates to a semiconductor manufacturing equipment, and in particular, through-hole alignment jig for aligning the through-hole to which the temperature sensor is fastened when the temperature sensor for sensing the temperature of the wafer heated by the plasma reaction and the use thereof It relates to a semiconductor manufacturing facility.

The manufacturing technology of a semiconductor device is largely composed of a deposition process of forming a processed film on a wafer and a photolithography process including a process of forming and etching a processed film on the processed film formed by the deposition process.

The deposition process and the etching process apply a high voltage of RF (Radio Frequency) to the inert gas and the reaction gas filled in the chamber to make the reaction gas into a plasma state, and the wafer is placed into the reaction gas in the plasma state. Exposure to form the processed film or by a semiconductor manufacturing facility for etching the processed film.

Such semiconductor fabrication equipment uses chucks to support or hold the wafer to prevent the semiconductor substrate from moving or misaligning during the process. In general, the holding of the substrate in the semiconductor equipment is a mechanical clamp method, but recently, the use of electrostatic chuck (ESC) excellent in particle and process uniformity is rapidly increasing have. In particular, the use of an electrostatic chuck as a device for high-density plasma etching and deposition has become common. Electrostatic chucks that use electrostatic attraction forces to hold the wafer have some advantages over other types of chucks (eg, mechanical chucks and vacuum chucks). As one of those advantages, electrostatic chucks can reduce stress-related cracks often caused by mechanical clamps. Such electrostatic chucks are called U.S. Patent No. 4,665,463, entitled "METHOD OF AND APPARATUS FOR APPLYING VOLTAGE TO ELECTROSTATIC CHUCK". Patent No. 5,117,121 and titled "ELECTROSTATIC CHUCK HAVING A THERMAL TRANSFER REGULATED PAD." Patent No. 5,978,202, respectively.

The electrostatic chuck includes a pair of electrodes embedded in a chuck body or sheet of dielectric material on top of the plasma electrode for inducing the plasma reaction. A workpiece, such as a wafer, is then placed on the electrostatic chuck. When a voltage is applied between the electrodes, the electrostatic chuck electrostatically pulls the wafer according to the Johnson-Rahbek effect to chuck the wafer. At this time, the wafer is electrostatically charged by the voltage applied through the electrostatic chuck.

Therefore, the constant power increases in proportion to the voltage and time applied from the electrostatic chuck. On the other hand, even when the voltage applied to the electrostatic chuck is interrupted, since the constant power may remain for a predetermined time, the electrostatically charged wafer must be grounded during dechucking.

On the other hand, the plasma reaction may increase the uniformity and activation of the reaction by separating the inert gas or the reaction gas into electrons and high temperature cations. In this case, the plasma electrode for inducing the plasma reaction includes an upper electrode formed on the upper end of the chamber to which the inert gas or the reactive gas is supplied, and a lower electrode formed on the lower side of the electrostatic chuck facing the upper electrode.

In addition, since the conductive impurities formed on the wafer may be degraded by the high temperature plasma reaction during the deposition or etching process, or the conductive metal wires formed on the wafer may be disconnected, the temperature must be cooled to a predetermined temperature.

The refrigerant may flow between the electrostatic chuck and the back surface of the wafer to prevent deterioration due to a high temperature plasma reaction and disconnection of the metal wiring. However, when the refrigerant is excessively flowed to overcool the wafer, it is necessary to monitor the surface temperature of the wafer because it may cause deposition or etching failure of the wafer.

Therefore, the semiconductor manufacturing apparatus according to the prior art has a temperature sensor for sensing the temperature of the wafer surface through a plurality of through holes formed in the electrostatic chuck and the lower electrode. At this time, when the temperature sensor is in contact with the wafer, since the charge charged on the wafer through the temperature sensor may leak, the temperature sensor is made of a non-contact sensor such as an optical sensor that is not in contact with the wafer.

However, the semiconductor manufacturing equipment according to the prior art had the following problems.

In the semiconductor manufacturing apparatus according to the related art, after the separation of the temperature sensor inserted through the plurality of through holes formed in the electrostatic chuck and the lower electrode, the electrostatic chuck and the lower electrode may not be aligned correctly at the time of fastening, resulting in damage to the temperature sensor. This could be a disadvantage because of poor productivity.

An object of the present invention for solving the above problems is caused by the electrostatic chuck and the lower electrode is not aligned correctly after the separation of the non-contact sensor inserted through the plurality of through holes formed in the electrostatic chuck and the lower electrode. The present invention provides a through-hole alignment jig and a semiconductor manufacturing apparatus using the same, which can increase or maximize productivity by preventing damage of the non-contact sensor.

 Through hole alignment jig according to an aspect of the present invention for achieving the above object is a handle that is held in the hand of the operator; A through bar extending from the handle and configured to pass through the plurality of through holes in a straight line; And a locking jaw formed between the through bar and the handle such that the handle is not inserted into the through hole while the through bar is inserted into the plurality of through holes.

In addition, another aspect of the present invention, the upper electrode and the lower electrode facing each other in the upper and lower portions of the chamber filled with an inert gas or reaction gas, applying a high voltage to make the inert gas or reaction gas into a plasma state; An electrostatic chuck for mounting or fixing a wafer during the plasma reaction on the lower electrode; A temperature sensor formed to flow through a plurality of through holes respectively formed in the electrostatic chuck and the lower electrode to sense a temperature of the wafer; And an alignment jig for aligning the plurality of through holes when the temperature sensor is separated and fastened to prevent damage to the temperature sensor.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only this embodiment to make the disclosure of the present invention complete, the scope of the invention to those skilled in the art It is provided to inform you.

1 is a cross-sectional view schematically showing a semiconductor manufacturing apparatus according to the present invention, Figure 2 is an exploded perspective view of the electrostatic chuck and the plasma electrode of Figure 1, Figure 3 is a through-hole alignment used to fasten the temperature sensor of Figure 1 It is a perspective view which shows a jig.

As shown in Figures 1 to 3, the semiconductor manufacturing equipment according to the present invention, the shower head is formed on the top of the chamber 100 filled with an inert gas or reaction gas to uniformly disperse the inert gas or reaction gas And an electrostatic chuck 114 formed at a lower end of the chamber 100 facing the shower head 112 to seat or fix the wafer W, and a lower portion or the lower portion of the electrostatic chuck 114. A plasma electrode (not shown) formed on the shower head 112 to excite the inert gas or the reactive gas into a high-temperature plasma state, and a plurality of through holes formed in the electrostatic chuck 114 and the plasma electrode. The temperature sensor 118 is formed to be introduced through the 115, 117 to sense the temperature of the wafer (W) and the plurality of through holes (115, 117) when the temperature sensor 118 is separated and fastened The temperature sensor 118 It is configured to include a through-hole arranging tool 120 to prevent damage.

Although not shown, a matching box for matching and supplying radio frequency power to the plasma electrode from the outside, controlling the high frequency power supplied to the matching box, and sensing the temperature received from the temperature sensor 118. It further comprises a control unit for outputting a control signal for controlling to determine the supply flow rate of the refrigerant supplied to the back surface of the wafer (W) by using the signal.

The plasma electrode includes an upper electrode formed on the shower head and a lower electrode 116 formed on the lower portion of the electrostatic chuck 114. In this case, the upper electrode or the lower electrode 116 receives a matched high frequency power applied from the matching box to separate the inert gas or the reactive gas supplied into the chamber 100 into electrons and high temperature cations to perform a plasma reaction. Induce. For example, the high frequency power applied to the upper electrode or the lower electrode 116 has a voltage of about 20000V and an energy of about tens of watts (W) or hundreds of watts (W).

In addition, the electrostatic chuck 114 press-fixes the wafer W with a constant power of a predetermined size by using the Johnson-Labeck effect. For example, the Johnson-Lavec effect was discovered in 1920 by Johnson and Lavec, in which a weakly conductive material such as agate, slate rock, and the metal plate adjacent to it were tightly coupled with a voltage of 200V. It became. In the absence of charge, this bond is easily broken. This phenomenon occurs in some ways because the metal is in contact with the weak conductive material. This occurs because the resistance in the transition region is large and the resistance between the cross sections of the metal plate and in the metal plate itself is small. Therefore, if there is any electric field in the transition space between the metal and the object, a large voltage is generated. Since the distance between the metal and the object is as small as about 1 nm, a large voltage is generated between these spaces. The electrostatic chuck 114 is a consumable part capable of attaching and detaching the wafer W without contacting the wafer W by using the electrostatic force induced by the Johnson-Labeck effect. At this time, the force associated with the Johnson-Labeck effect increases with the time that the potential difference is applied. When the potential difference is removed from the electrode, the remaining force will gradually decrease with time. This may not immediately disconnect the wafer W from the electrostatic chuck 114 if the force of the Johnson-Labeck effect is too large. Therefore, the wafer W may be grounded through the dielectric member so that the charge remaining in the wafer W may be reduced to a predetermined level or less to dechuck.

The wafer W may be fixed and supported on the electrostatic chuck 114 to be heated to a predetermined temperature by the high temperature plasma reaction. For example, the plasma reaction is performed at about 700 ° C to about 800 ° C. Accordingly, in order to prevent the conductive impurities heated by the plasma reaction from being ion-implanted on the wafer W by the plasma reaction, or the conductive metal wiring formed on the wafer W is disconnected. A coolant hole having a predetermined size for flowing a coolant between the chuck 114 and the back surface of the wafer W is radially uniformly formed on the electrostatic chuck 114. For example, helium or galden is mainly used as the refrigerant, and is cooled and circulated and supplied to the refrigerant hole.

The temperature sensor 118 is inserted into the first through hole 115 formed in the static electricity and the second through hole 117 formed in the lower electrode 116 to adjust the temperature of the back surface of the wafer W. Sensing. For example, the temperature sensor 118 is made of a non-contact optical sensor that is in contact with the back surface of the wafer (W). In this case, the optical sensor receives infrared rays (energy having a wavelength longer than about 7000 kHz) generated from the wafer W heated by the plasma reaction and outputs them to the controller. At this time, when the temperature sensor 118 is in contact with the back surface of the wafer (W), the voltage applied from the electrostatic chuck 114 is dropped, the wafer (W) is separated from the electrostatic chuck 114 is deposited process Alternatively, a poor etching process may be caused.

On the other hand, during the preventive maintenance or parts replacement, the electrostatic chuck 114 and the lower electrode 116 are coupled, and the temperature sensor 118 are sequentially coupled. In this case, when the first through hole 115 and the second through hole 117 are not aligned in a straight line and the temperature sensor 118 is inserted and fastened, the temperature sensor 118 may be scratched or damaged. have.

Therefore, the semiconductor manufacturing apparatus according to the present invention includes a through hole alignment jig for aligning the first through hole 115 of the electrostatic chuck 114 and the second through hole 117 of the lower electrode 116 in a straight line. 120 may be provided to facilitate fastening of the temperature sensor 118.

The light through hole alignment jig is formed through the handle 122 held by the operator's hand and the handle 122 so that the first through hole 115 and the second through hole 117 pass in a straight line. The handle 124 is not inserted into the plurality of through holes 115 and 117 while the bar 124 and the through bar 124 are inserted into the plurality of through holes 115 and 117. It includes a locking jaw 126 formed between the through bar 124 and the handle 122.

Here, the through bar 124 is formed to have a diameter that is the same as or similar to the diameter of the temperature sensor 118 or larger than the diameter of the temperature sensor 118. In this case, the electrostatic chuck 114 may be inserted into the edge of the lower electrode 116 and rotated so that the first through hole 115 and the second through hole 117 are aligned in one direction. That is, the electrostatic chuck 114 inserted into the lower electrode 116 is rotated in one direction while a predetermined force is applied in a direction perpendicular to the through bar 124 inserted into the first through hole 115. When the first through hole 115 and the second through hole 117 are aligned, the through bar 124 is inserted into the second through hole 117 and the first through hole 115 and the The second through holes 117 are aligned in one direction.

In addition, when the through bar 124 is inserted into the second through hole 117 by a predetermined depth or more, the locking jaw 126 collides with the periphery of the first through hole 115 and the through bar 124. Can prevent the insertion of The through bar 124 may be inserted into the second through hole 117 first and then inserted into the first through hole 115. Thereafter, the through bar 124 is disposed at the electrostatic chuck 114 and the lower electrode 116 in which the first through hole 115 and the second through hole 117 are aligned in a straight line by the through bar 124. After the separation, the temperature sensor 118 may be inserted into the first through hole 115 and the second through hole 117. In this case, the temperature sensor 118 is first inserted into the second through hole 117 under the lower electrode 116 and then inserted into the first through hole 115 of the electrostatic chuck 114. Is fastened.

Accordingly, the semiconductor manufacturing apparatus according to the present invention includes a through hole alignment jig 120 for aligning a plurality of through holes 115 and 117 formed in the electrostatic chuck 114 and the lower electrode 116, respectively. When the temperature sensor 118 inserted through the 115 and 117 is fastened, the electrostatic chuck 114 and the lower electrode 116 may not be aligned correctly, thereby preventing damage to the temperature sensor 118 caused by the temperature sensor 118. As a result, productivity can be increased or maximized.

In addition, the description of the above embodiment is merely given by way of example with reference to the drawings in order to provide a more thorough understanding of the present invention, it should not be construed as limiting the present invention. In addition, for those skilled in the art, various changes and modifications may be made without departing from the basic principles of the present invention.

As described above, according to the present invention, the electrostatic chuck and the electrostatic chuck at the time of fastening the temperature sensor inserted through the plurality of through holes are provided with a through hole alignment jig for aligning the plurality of through holes formed in the electrostatic chuck and the lower electrode. Since the lower electrode can be prevented from damaging the temperature sensor caused by not accurately aligned, there is an effect that can increase or maximize productivity.

Claims (3)

A handle held in the hand of the worker; A through bar extending from the handle and configured to pass through the plurality of through holes in a straight line; And And a locking jaw formed between the through bar and the handle such that the handle is not inserted into the through hole while the through bar is inserted into the plurality of through holes. The method of claim 1, The through bar alignment jig according to claim 1, wherein the through bar is formed to have the same or similar size as that of the plurality of through holes. An upper electrode and a lower electrode facing each other at upper and lower portions of a chamber filled with an inert gas or a reaction gas and applying a high voltage to make the inert gas or the reaction gas into a plasma state; An electrostatic chuck for mounting or fixing a wafer during the plasma reaction on the lower electrode; A temperature sensor formed to flow through a plurality of through holes respectively formed in the electrostatic chuck and the lower electrode to sense a temperature of the wafer; And And a alignment jig for aligning the plurality of through holes to prevent damage of the temperature sensor when the temperature sensor is separated and fastened.

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