KR20070023409A - Deposition Apparatus - Google Patents

Abstract

The present invention relates to a vapor deposition apparatus, comprising: at least one filament array corresponding to a gas nozzle portion, wherein a power is supplied to a filament region corresponding to an outer region of the gas nozzle portion rather than a filament region corresponding to a center region of the gas nozzle portion; Is applied higher, providing a deposition apparatus with improved uniformity of deposits.

Deposition equipment

Description

Deposition Apparatus

1 is a schematic cross-sectional view of a CECVD apparatus according to an embodiment of the present invention.

2A and 2B are plan views of a gas nozzle unit according to example embodiments.

3A to 3D are plan views illustrating embodiments of a filament unit according to an embodiment of the present invention.

4A to 4D are plan views showing a combination of a gas nozzle unit and a filament array as one embodiment of the present invention.

5A to 5E are plan views illustrating embodiments of a shower head in which a gas nozzle part and a filament part are combined as one embodiment of the present invention.

 <Description of Symbols for Main Parts of Drawings>

100: chamber 110: chuck

120: substrate 130: shower head

131: guard nozzle 132: filament

133 electrode 200 unit gas nozzle unit

310: filament array 400: center area

410: outer area

The present invention relates to a deposition apparatus, and more particularly, to a filament having at least one filament array corresponding to a gas nozzle portion, and corresponding to an outer region of the gas nozzle portion rather than a filament region corresponding to a center region of the gas nozzle portion. A deposition apparatus in which higher power is applied to a region.

Physical vapor deposition or chemical vapor deposition is used as a method of forming various types or layers of thin films constituting a flat panel display such as an organic electroluminescent element.

A representative example of the physical vapor deposition method is a sputtering method, which uses a principle of depositing the source on a substrate by applying energy such as plasma to a bulk source. A representative example of the vapor deposition method is PECVD (Plasma Enhanced Chamical Vapor Deposition), which utilizes the principle of depositing a gas source on a substrate by decomposing or combining the gas by applying energy such as plasma.

In this case, the sputtering method can proceed the process without heating the substrate, while there is a problem that it is difficult to enlarge the size, while the PECVD has the advantage that it is easy to enlarge the size, and the substrate can be maintained at a relatively low temperature, There is a problem that a large amount of unwanted impurities may be included in a deposit deposited on a substrate.

When the PECVD forms a silicon nitride film on a substrate, a silane (SiH ₄ ) gas or an ammonia (NH ₃ ) gas or the like is used as a source gas, and the silane gas or ammonia gas is used as a plasma in each gas. After the hydrogen is separated, silicon and nitrogen are combined to form a silicon nitride film. Hydrogen is not completely decomposed in the silane gas or ammonia gas, and a large amount of hydrogen exists in the silicon nitride film formed on the substrate.

Hydrogen present in the silicon nitride film inhibits the characteristics of the silicon nitride film. In particular, when the silicon nitride film is used for encapsulation of an organic electroluminescent device, hydrogen in the silicon nitride film is oxygen. By reacting with water to form moisture, it causes fatal damage to the organic film and the like of the organic EL device.

In order to solve this problem of the prior art, research is being conducted to improve the decomposition ability of hydrogen bonds in source gas. As an example, Catalytic Enhanced Chemical Vapor Deposition (CECVD) is used.

The CECVD decomposes the source gas uniformly ejected from the uniformly arranged gas nozzles using a heated filament almost completely so that almost no impurities such as hydrogen are contained in the deposition film deposited on the substrate.

However, when the encapsulation silicon nitride film is formed on a large substrate by using the CECVD, the thickness of the silicon nitride film formed over the entire substrate is not uniform, in particular, the thickness of the edge region is higher than that of the central region of the substrate. The problem of thinning occurs.

Accordingly, the present invention is to solve the above-mentioned disadvantages and problems of the prior art, having at least one filament array corresponding to the gas nozzle portion, the filament region corresponding to the center region of the gas nozzle portion It is an object of the present invention to provide a deposition apparatus with improved uniformity of deposits by applying higher power to a filament region corresponding to an outer region of the gas nozzle portion.

The object of the present invention is a chamber; A chuck located inside the chamber; A substrate mounted to the chuck; A gas nozzle unit corresponding to the substrate; And at least one filament array positioned between the substrate and the gas nozzle portion, wherein the filament array includes at least one filament region to which a predetermined power is applied, respectively.

Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a schematic cross-sectional view of a CECVD apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the chamber 100 is closed to be separated from the external environment so as to maintain a vacuum, and the lower end of the chamber 100 is a workpiece, that is, a substrate processed by the chemical vapor apparatus. The chuck 110 fixing the 120 is positioned, and the substrate 120 is seated on the chuck 110.

A shower head 130 for supplying a deposit on the substrate 120 is attached to a position corresponding to the chuck 110. The shower head 130 includes a gas nozzle unit in which a plurality of nozzles 131 are arranged, a filament unit in which at least one filament 132 is arranged, and a pair of electrodes 133 connected to both ends of the filament. In this case, an external power source (not shown) for supplying power to the electrode 133 is connected.

In this case, the filament 132 illustrated in FIG. 1 illustrates a unit filament, and the unit filament is defined as a minimum unit that may exist as a heating body having both ends connected to the electrode 133.

In addition, a wall heater 140 is mounted on the outer wall of the chamber 100.

In addition, an exhaust port (not shown) including a vacuum pump (not shown) capable of exhausting air or gas inside the chamber is attached to a predetermined region of the chamber.

Referring to FIG. 1, a deposition method of CECVD is provided by supplying power to an electrode 133 inside a vacuum evacuated chamber 100 through an external power source, and then source gas (silane (SiH ₄ ) and ammonia (NH _3). ) And nitrogen (N ₂ )) are injected into the shower head 130 through a gas injection hole (not shown). The gas injected into the Shawe head 130 is injected through the gas nozzle 131 and passes through the filament 132 heated to about 1800 ° C., and then deposited on the substrate 120 as a silicon nitride film (SiNx). to be.

At this time, the gas injected from the shower head 130 is decomposed by the heat of the filament 132 to form a thin film on the substrate 120. In addition, the thin film decomposed by the heat of the filament 132 and formed on the substrate 120 contains little hydrogen, which is because the gas injected from the gas nozzle 131 is caused by the heat of the filament 132. This is because the decomposition of hydrogen occurs almost completely.

In general, the encapsulation thin films of the organic electroluminescent device should contain almost no hydrogen, since hydrogen and oxygen in the encapsulation thin films react to generate moisture which adversely affects the characteristics of the organic electroluminescent devices. to be.

The filament 132 is formed of one or an alloy thereof selected from tungsten (W), tantalum (Ta), nickel (Ni), and chromium (Cr), and is preferably formed of tungsten (W), which is a high melting point metal. . The filament 130 may generate power at high heat by receiving power from the external power source to the electrode 133. In addition, the filament 132 has a diameter or thickness of 0.1 to 5.0mm.

The thin film may be formed of a different type of thin film according to the deposition source gas, and when the deposition source gas is silane (SiH ₄ ), ammonia (NH ₃ ), and dinitrogen monoxide (N ₂ O), the thin film is formed as a SiON thin film.

Since the gas injected from the shower head 130 has various distributions according to the sizes and positions of the plurality of gas nozzles of the shower head 130, an appropriate gas nozzle size and position so that the injected gas has a uniform density. Select to form a shower head.

In addition, a wall heater 140 may be further mounted on the outer wall of the chamber 100. This is because when the temperature of the chamber 100 is low, deposits to be deposited on the substrate 120 are deposited on the inner wall of the chamber 100, thereby reducing the deposition efficiency and causing particles to be prevented. It is attached to heat to a constant temperature.

2A and 2B are plan views of a gas nozzle unit according to example embodiments.

Referring to FIG. 2A, a unit gas nozzle unit 200 in which a plurality of gas nozzles 131 are regularly arranged is illustrated in FIG. 2A. In this case, the unit gas nozzle unit 200 refers to a minimum unit that can be mechanically decomposed, and the gas nozzle unit illustrated in FIG. 1 includes one unit gas nozzle unit 200.

Referring to FIG. 2B, at least two unit gas nozzle parts 200 in which a plurality of gas nozzles 131 are regularly arranged are mechanically coupled to form one gas nozzle part. In this case, the gas nozzle unit illustrated in FIG. 2B shows that four unit gas nozzle units 200 are coupled.

In this case, the gas nozzle unit consisting of one unit gas nozzle unit 200 or a plurality of unit gas nozzle units 200 shown in FIGS. 2A and 2B, respectively, is merely a difference in size of the gas nozzle unit 200. The ability and method are the same.

That is, the gas nozzle unit used in the deposition apparatus for depositing the deposit on the large substrate, the gas nozzle unit attached to one shower head will use the gas nozzle unit consisting of a plurality of unit gas nozzle unit 200, the deposit on the small substrate The gas nozzle part used in the deposition apparatus for depositing the gas will use a gas nozzle part consisting of one or several unit gas nozzle parts 200. Therefore, hereinafter referred to as the gas nozzle unit in the present invention may refer to any of the above 2a and 2b.

3A to 3D are plan views illustrating embodiments of a filament part according to embodiments of the present invention.

Referring to FIG. 3A, one filament array 310 is formed of one unit filament 300.

Referring to FIGS. 3B and 3C, the filament array 310 illustrated in FIG. 3B is the same as the unit filament 300, although the plurality of unit filaments 300 are arranged to form one filament array 310. ) Are arranged in one direction (ie, horizontal direction), and the filament array 310 shown in FIG. 3C is arranged in at least two directions (that is, horizontal direction and vertical direction) to obtain more various arrangements. There is a difference, but others are similar.

Referring to FIG. 3D, one filament array 310 is formed by arranging a plurality of unit filaments 300 and arranging different unit filaments 300.

In this case, the filament array 310 illustrated in FIGS. 3A to 3D is merely a mechanically distinguishable minimum and indicates a minimum collection of filaments that cannot be separated mechanically.

4A to 4D are plan views showing a combination of a gas nozzle unit and a filament array as one embodiment of the present invention.

Referring to FIGS. 4A to 4D, the gas nozzle unit shown in FIG. 2A or 2B and the filament array 310 shown in FIGS. 3A to 3D are combined, respectively, and FIG. 4A shows the gas nozzle unit and FIG. It is shown that the filament array 310 is coupled, and the gas nozzles 131 in the same row among the gas nozzles 131 of the gas nozzle unit share one unit filament 300.

4B shows a combination of the gas nozzle unit and the filament array 310 of FIG. 3B, which shows that the entire gas nozzle 131 of the gas nozzle unit is shared with one filament array 310.

4C shows a combination of the gas nozzle unit and the filament array 310 of FIG. 3C, wherein each of the gas nozzles 131 of the gas nozzle unit is shared with one unit filament 300.

FIG. 4D shows a combination of the gas nozzle unit and the filament array 310 of FIG. 3D, wherein some of the gas nozzles 131 of the gas nozzle unit share a small number of which are shared with various types of unit filaments 300. It is showing what it is.

At this time, the combination of the gas nozzle unit and the filament array 310 shown in Figures 4a to 4d shows that one filament array 310 is coupled to one or a plurality of gas nozzle, a plurality of filaments The array 310 may be combined. That is, the combination of one or more filament arrays 310 may be combined with one or more gas nozzles.

5A to 5E are plan views illustrating embodiments of a shower head in which a gas nozzle part and a filament part are combined as one embodiment of the present invention.

Referring to FIG. 5A, an embodiment of the shower head formed by attaching one filament array 310 to one unit gas nozzle unit 200 is illustrated.

The one filament array 310 may be divided into two filament regions. The two filament regions may be divided into a center region 400 that is a first filament region and an outer region 410 that is a second filament region.

In this case, the filament regions are collection regions of the same power applied to each unit filament. That is, the power applied to the first filament area and the second filament area are different. That is, power connected to the first filament area and the second filament area may be different.

In general, when a thin film is formed on a substrate using a vapor deposition apparatus, as described above in the related art, the thickness of the thin film deposited on the edge region of the substrate is thinner than that of the central region, so that the uniformity of the thickness throughout the substrate is achieved. Will be lowered.

In order to solve the above problems, in the present invention, the power applied to the outer region 410 which is the second filament region supplying the deposition material to the outer region of the substrate is higher than that of the center region 400 which is the first filament region. The unit filaments of at least the outer filament area 410 which is the second filament area are heated to a higher temperature than the filaments of the center area 400 which is the first filament area.

As described above, in the outer region 410 which is the second filament region heated to a higher temperature than the center region 400 which is the first filament region, the gases injected from the gas nozzle part are better decomposed, so that the silicon and nitrogen Alternatively, more radicals of oxygen are produced, resulting in an increase in deposits deposited on the substrate such that the thickness of the thin film deposited on the substrate becomes uniform throughout the substrate.

Referring to FIG. 5B, the shower head is a combination of one or more unit gas nozzle parts 200 and a plurality of filament arrays 310. At this time, the dotted line shown in the figure is the boundary of the single filament array 310.

At this time, in the present exemplary embodiment, the outer filament arrays 310 of the plurality of filament arrays 310 are defined as the outer region 410 that is the second filament region, and the inner filament array except for the outer region 410. Reference numeral 310 is defined as a center region 400 that is a first filament region. That is, in one filament array 310, the center region 400 or the second filament region, which is the first filament region, belongs to one of the outer region 410.

In this case, when a thin film is formed on a substrate by applying a higher power to the unit filaments of the outer region 410 that is the second filament region than the center region 400 that is the first filament region, The thickness of the thin film deposited on the central region can be made uniform.

Referring to FIG. 5C, as shown in FIG. 5B, one or more unit gas nozzle units 200 and a plurality of filament arrays 310 are combined. At this time, the dotted line shown in the figure is the boundary of the single filament array 310.

At this time, in the present exemplary embodiment, the filament arrays 310 corresponding to the corner regions of the gas nozzle unit among the plurality of filament arrays 310 are defined as the outer region 410 which is the second filament region, and the outer region 410 Other filament arrays 310 are defined as the center region 400 that is the first filament region. That is, in one filament array 310, the center region 400 or the second filament region, which is the first filament region, belongs to one of the outer region 410.

In this case, when a thin film is formed on a substrate by applying higher power to the unit filaments of the outer region 410 that is the second filament region than the center region 400 that is the first filament region, The thickness of the thin film deposited in the central region becomes uniform.

Referring to FIG. 5D, the shower head is a combination of one or more unit gas nozzle parts 200 and a plurality of filament arrays 310 as shown in FIG. 5B. At this time, the dotted line shown in the figure is the boundary of the single filament array 310.

In this embodiment, the thin film is formed on the substrate using the same shower head as the shower head of the present embodiment, but the thin film is formed on the substrate by applying the same power to the entire unit filament of the filament portion of the shower head. When formed, the filament portion corresponding to the region where the thickness of the thin film formed on the substrate becomes relatively thin compared to the thickness of the center region of the substrate is defined as the outer region 410 which is the second filament region, and the outer region 410 is defined. The other filament arrays 310 are defined as the center region 400 which is the first filament region. That is, when the same power is applied to the whole of the filament portion, the region where the thickness of the thin film formed on the substrate is relatively thin is defined as the outer region 410 which is the second filament region, compared with the center region 400. Higher power is applied to the outer region 410 to allow more deposition to be supplied to the edge region of the substrate.

Accordingly, some of the filament arrays 310 are applied with a relatively high power in some parts and a relatively low power in some parts so that the outer filament area 410 as the second filament area and the center area 400 as the first filament are This filament array 310 may be present at the same time.

Referring to FIG. 5E, the shower head is a combination of one or more unit gas nozzle parts 200 and a plurality of filament arrays 310 as shown in FIG. 5B. At this time, the dotted line shown in the figure is the boundary of the single filament array 310.

At this time, in an embodiment of the present invention, the unit filaments of the filament unit are divided into regions by a predetermined region, and different powers are applied to each region. That is, as shown in FIG. 5E, the filament part has a predetermined distance from the center of the filament part at the center of the first filament area 400, the second filament area 402, the third filament area 404, and the fourth filament area ( 406 and the outer region 410, which is the fifth filament region, and apply different powers. In this case, the applied power increases as the distance from the center of the filament portion. In this case, although divided into five regions in FIG. 5E, it may be divided into a smaller number of regions as necessary, or may be divided into a larger number of regions.

In the case of applying the power in the same manner as in the present embodiment, by dividing the filament into a plurality of regions and applying different powers, the deposition material deposited on the substrate is controlled by controlling the amount of deposition or deposition conditions in each region. By controlling, it becomes easy to maintain the uniformity of thickness over the entire substrate.

As an embodiment using the shower head described with reference to FIGS. 5A to 5E, when the encapsulation thin film is formed on a substrate having a size of 370 × 400 mm, SiH ₄ , NH ₃ and N ₂ are formed in the gas nozzle part. The gas is injected and different powers are applied to the center region 400 and the outer region 410 of the filament part so that the filaments of the center region 400 and the filaments of the outer region 410 are 1800 degrees and 1900 degrees, respectively. By heating, the thickness uniformity of the sealing thin film (that is, silicon nitride film) formed on the substrate is within 10% to obtain a high quality uniform sealing thin film.

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Therefore, the deposition apparatus of the present invention has an effect of increasing the uniformity of the deposit by applying a higher power to the filament region corresponding to the outer region of the gas nozzle portion than the filament region corresponding to the center region of the gas nozzle portion.

Claims (7)

chamber; A chuck located inside the chamber; A substrate mounted to the chuck; A gas nozzle unit corresponding to the substrate; And At least one filament array positioned between the substrate and the gas nozzle portion, And each of the filament arrays includes at least one filament region to which a predetermined power is applied. The method of claim 1, And a power applied to the filament area corresponding to the center area of the gas nozzle part among the filament areas is smaller than a power applied to the filament area corresponding to the outer area of the gas nozzle part. The method of claim 1, And the power applied to the filament area close to the center area of the gas filament part of the filament area is smaller than the power applied to the filament area far from the center area of the gas nose part. The method of claim 1, The gas nozzle unit comprises at least one unit gas nozzle unit. The method of claim 4, wherein And the at least one gas nozzle part is regularly arranged. The method of claim 1, And the filament array includes at least one unit filament comprising a pair of electrodes and a filament connected to the pair of electrodes. The method of claim 1, The filament region is a deposition apparatus, characterized in that the applied power is a region consisting of the same unit filament.

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