KR20070010981A - Vertical structured nitride based semiconductor light emitting device - Google Patents

Abstract

A nitride semiconductor LED with a vertical structure is provided to prevent current from being concentrated on a portion under an n-side electrode and embody a uniform current diffusion by forming a transparent electrode layer on the upper surface of an n-type nitride semiconductor LED. An active layer(12) is formed on the lower surface of an n-type nitride semiconductor layer(11). A p-type nitride semiconductor layer(13) is formed on the lower surface of the active layer. A transparent electrode layer(18) is formed on the upper surface of the n-type nitride semiconductor layer. An n-side electrode is formed on a partial region of the upper surface of the transparent electrode layer, including a reflection electrode layer(19) made of at least one layer. The reflection electrode layer includes a first layer made of a material selected from a group of Al, Ag, Pd, Pt and their compound.

Description

Vertical structure nitride semiconductor light emitting device {VERTICAL STRUCTURED NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE}

1 is a side cross-sectional view showing a conventional vertical structure nitride semiconductor light emitting device.

2 is a side cross-sectional view showing a vertical structure nitride semiconductor light emitting device according to the first embodiment of the present invention.

3 is a side sectional view showing a vertical structure nitride semiconductor light emitting device according to a second embodiment of the present invention.

4 is a side sectional view showing a vertical structure nitride semiconductor light emitting device according to a third embodiment of the present invention.

5 is an enlarged side sectional view showing a portion of a vertical nitride semiconductor light emitting device according to a fourth embodiment of the present invention.

6 is an enlarged side sectional view showing a portion of a vertical structure nitride semiconductor light emitting device according to a fifth embodiment of the present invention.

* Explanation of symbols for main parts of drawings *

11: n-type nitride semiconductor layer 12: active layer

13: p-type nitride semiconductor layer 14: highly reflective ohmic contact layer

15: conductive bonding layer 16: supporting substrate

17: bonding pad 17a: Cr layer

17b: Au layer 18: transparent electrode layer

19: reflective electrode layer

The present invention relates to a vertical nitride semiconductor light emitting device, and more particularly, by forming a reflective layer on the n-side electrode formed on the n-type nitride semiconductor layer used as the light exit surface of the vertical nitride semiconductor light emitting device, It is possible to reduce the light loss and improve the luminance by reflecting the light incident to the n-side electrode, and to improve the current diffusion by providing a transparent electrode layer between the n-side electrode and the n-type nitride. It relates to a vertical structure nitride semiconductor light emitting device that can be.

In general, nitride semiconductors are group III-V semiconductor crystals such as GaN, InN, AlN, and the like, and are widely used in light emitting devices capable of emitting short wavelength light (ultraviolet to green light), especially blue light.

Since the nitride semiconductor light emitting device is manufactured using an insulating substrate such as a sapphire substrate which is known to satisfy the lattice matching condition for crystal growth most, two electrodes connected to the p-type and n-type nitride semiconductor layers are almost on the upper surface of the light emitting structure. It takes a horizontal structure arranged horizontally.

The nitride semiconductor light emitting device having such a horizontal structure has various disadvantages. First, the current flow from the n-side electrode toward the p-type electrode through the active layer can be narrowly formed along the horizontal direction. Due to such a narrow current flow, the nitride semiconductor light emitting device having a horizontal structure has a disadvantage in that the forward voltage Vf is increased to decrease current efficiency.

In addition, in the nitride semiconductor light emitting device having a horizontal structure, the heat generation amount is large due to the increase of the current density, while the heat emission is not smooth due to the low thermal conductivity of the sapphire substrate. There is a disadvantage that the device is unstable due to the occurrence of mechanical stress in the liver.

In addition, in the nitride semiconductor light emitting device having a horizontal structure, in order to form the n-side electrode, the partial area of the active layer and the p-type nitride semiconductor layer must be removed to be larger than the area of the n-type electrode to be formed, so that the light emitting area is reduced and the device size There is also a disadvantage that the luminous efficiency is reduced due to the large luminance.

In order to improve the disadvantages of the nitride semiconductor light emitting device having a horizontal structure, development of a nitride semiconductor light emitting device having a vertical structure in which a sapphire substrate is removed using a laser lift-off process is being actively performed.

1 is a side cross-sectional view showing a conventional vertical structure nitride semiconductor light emitting device. Referring to FIG. 1, in the conventional vertical structure nitride semiconductor light emitting device 100, an n-type nitride semiconductor layer 110, an active layer 120, and a p-type nitride semiconductor layer 130 are sequentially formed on a sapphire substrate. Thereafter, the sapphire substrate is removed using a laser lift off (LLO) process, and the upper surface of the n-type nitride semiconductor layer 110 is light-released using the n-type nitride semiconductor layer 110 as the uppermost layer. Use as cotton.

Accordingly, the n-type nitride semiconductor layer 110, the active layer 120 formed on the bottom surface of the n-type nitride semiconductor layer 110, the p-type nitride semiconductor layer 130 formed on the bottom surface of the active layer 120, and the p-type nitride The semiconductor layer 130 has a structure including a highly reflective contact layer 140, a conductive adhesive layer 150, and a conductive support substrate 160 sequentially formed on the bottom surface of the semiconductor layer 130. An n-side electrode 170 is formed on an upper surface of the n-type nitride semiconductor layer 130, and current is supplied by wire bonding to the n-side electrode 170.

As shown in FIG. 1, in the conventional vertical structure nitride semiconductor light emitting device 100, the n-side electrode 170 is in contact with an upper surface of the n-type nitride semiconductor layer 110 and the Cr layer 170a and the Cr layer. It consists of Au layer 170b formed in the upper surface of 170a. The conventional n-side electrode 170 functions as a bonding pad used for bonding wires to supply current from the outside. Since the n-side electrode 170 having the double layer structure of Cr / Au has a low reflectance, light incident in the direction in which the n-side electrode 170 is formed is not reflected among the light generated in the active layer 120. It is absorbed by the n-side electrode 170. As such, due to the loss of light absorbed by the n-side electrode 170, a problem occurs that the luminance of light emitted to the outside of the nitride semiconductor light emitting device 100 is lowered.

In addition, a phenomenon occurs in which the current passing through the nitride semiconductor light emitting device 100 is concentrated to the lower portion of the n-side electrode 170 having low resistance, so that the effective current is not dispersed and the area of the active layer 130 participating in actual light emission. This reduction causes a problem that the luminance is lowered.

Accordingly, there is a need in the art for a vertical nitride semiconductor light emitting device capable of improving the brightness of light emitted to the outside by preventing light absorption of the n-side electrode and simultaneously diffusing current efficiently.

The present invention has been made to solve the above-described problems of the prior art, the object of which is to provide a reflection electrode layer on the n-side electrode to prevent the absorption of light by the n-side electrode and reflect the light incident on the n-side electrode The present invention provides a vertical structure nitride semiconductor light emitting device capable of reducing light loss and improving light emission luminance.

Another object of the present invention is to provide a vertical nitride semiconductor light emitting device capable of improving current spreading by providing a transparent electrode layer between an n-side electrode and an n-type nitride.

As a technical means for achieving the above object, the present invention,

an n-type nitride semiconductor layer;

An active layer formed on the bottom surface of the n-type nitride semiconductor layer;

A p-type nitride semiconductor layer formed on the lower surface of the active layer;

A transparent electrode layer formed on an upper surface of the n-type nitride semiconductor layer; And

Provided is a vertical nitride semiconductor light emitting device including an n-side electrode formed on a portion of an upper surface of the transparent electrode layer and having a reflective electrode layer formed of at least one layer.

In one embodiment of the present invention, the reflective electrode layer preferably comprises a first layer made of a material selected from the group consisting of Al, Ag, Pd, Pt and the compound comprising the material. In this case, it is preferable that the compound contains at least one material selected from the group consisting of Cu, Si, W, Mo, Co and Ni.

In another embodiment of the present invention, the reflective electrode layer comprises a first layer made of a material selected from the group consisting of Al, Ag, Pd, Pt and a compound comprising the material, and formed on the first layer and formed of Ti, It is preferred to include a second layer made of a material selected from the group consisting of Ni, Pt, Pd and Rh. In this embodiment, the second layer may be formed in a structure surrounding the top and side surfaces of the first layer.

In another embodiment of the present invention, the reflective electrode layer comprises a first layer made of a material selected from the group consisting of Al, Ag, Pd, Pt and a compound comprising the material, and formed on the first layer and being Ti And a second layer made of a material selected from the group consisting of Ni, Pt, Pd, and Rh, and a third layer formed on the second layer and made of a material selected from the group consisting of Au, Pt, and Rh. .

In the above various embodiments, the second layer may be formed to have a structure surrounding the top and side of the first layer, and the third layer may be formed to have a structure surrounding the top and side of the second layer. . In addition, it is preferable that the first layer has a thickness of 500 kPa to 5000 kPa, the second layer has a thickness of 50 kPa to 500 kPa, and the third layer has a thickness of 200 kPa to 2000 kPa.

In the various embodiments, the n-side electrode may further include a bonding pad formed on the reflective electrode layer, and the structure may include a Cr layer formed on the reflective electrode layer and an Au layer formed on the Cr layer. Can be.

Preferably, the transparent electrode layer is selected from the group consisting of indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂ ), zinc oxide (ZnO) and indium zinc oxide (IZO). It may include at least one layer of the selected oxide.

In addition, it is preferable that an adhesive layer is formed between the transparent electrode layer and the reflective electrode layer. The adhesive layer may be made of a material selected from the group consisting of Ni, Ti, Rh and Cr, and the thickness thereof is preferably 1 kPa to 100 kPa.

Preferably, the substrate may further include a conductive support substrate formed under the p-type nitride semiconductor layer, and may further include a conductive bonding layer formed between the conductive support substrate and the p-type nitride semiconductor layer. In addition, a highly reflective ohmic contact layer may be formed on the bottom surface of the p-type nitride semiconductor layer. The highly reflective ohmic contact layer may include at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and combinations thereof.

Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiment of this invention is provided in order to demonstrate this invention more completely to the person skilled in the art to which this invention belongs. Therefore, the shape and size of the components shown in the drawings may be exaggerated for more clear description, components having substantially the same configuration and function in the drawings will use the same reference numerals.

2 is a side cross-sectional view showing a vertical structure nitride semiconductor light emitting device according to the first embodiment of the present invention. 2, the vertical nitride semiconductor light emitting element 10 according to the present embodiment includes an n-type nitride semiconductor layer 11; An active layer 12 formed on the bottom surface of the n-type nitride semiconductor layer 11; A p-type nitride semiconductor layer 13 formed on the lower surface of the active layer 12; A transparent electrode layer 18 formed on an upper surface of the n-type nitride semiconductor layer 11; An n-side electrode (17) having a reflective electrode layer (19) formed in a portion of the upper surface of the transparent electrode layer (18) and having a bonding pad (17) formed on the reflective electrode layer (19); A highly reflective ohmic contact layer 14 formed on the bottom surface of the p-type nitride semiconductor layer; A conductive bonding layer 15 formed on a lower surface of the highly reflective ohmic contact layer 14; And a conductive support substrate 16 formed on the lower surface of the conductive bonding layer 15.

In general, the vertical nitride semiconductor light emitting device 10 sequentially forms an n-type nitride semiconductor layer 11, an active layer 12, and a p-type nitride semiconductor layer 13 on a sapphire substrate, and then lifts off the laser. The sapphire substrate is removed using a laser lift off (LLO) process, and the upper surface of the n-type nitride semiconductor layer 11 is used as the light emitting surface with the n-type nitride semiconductor layer 11 as the uppermost layer. Therefore, in the present specification, the vertical nitride semiconductor light emitting device 10 will be described as the uppermost n-type nitride semiconductor layer 11.

The n-type nitride semiconductor layer 11 is n-doped having an Al _x In _y Ga _(1-xy) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. It can be made of a semiconductor material, a typical nitride semiconductor material is GaN, AlGaN, GaInN. As an impurity used for the doping of the n-type nitride semiconductor layer 11, Si, Ge, Se, Te, or C may be used. The n-type nitride semiconductor layer 11 may be formed of a metal organic chemical vapor deposition (MOCVD) method, a molecular beam growth method (MBE), or a hydride vapor deposition method (Hydide Vapor Phase Epitaxy). : HVPE) can be formed using a known deposition process.

The active layer 12 is a layer for emitting light and is composed of a nitride semiconductor layer such as GaN or InGaN having a single or multiple quantum well structure. The active layer 12 may be formed using a known deposition process such as organometallic vapor deposition, molecular beam growth, or hydride vapor deposition, like the n-type nitride semiconductor layer 11.

Like the n-type nitride semiconductor layer 11, the p-type nitride semiconductor layer 13 has an Al _x In _y Ga _(1-xy) N composition formula (where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0). ≦ x + y ≦ 1), and typical nitride semiconductor materials include GaN, AlGaN, and GaInN. Impurities used for the doping of the p-type nitride semiconductor layer 13 include Mg, Zn, or Be. The p-type nitride semiconductor layer 13 may be formed using a known deposition process such as organometallic vapor deposition, molecular beam growth, or hydride vapor deposition.

A highly reflective ohmic contact layer 14 may be formed on the bottom surface of the p-type nitride semiconductor layer 13. The highly reflective ohmic contact layer 14 is suitable for lowering the contact resistance with the p-type nitride semiconductor layer 13 having a relatively high energy band gap and at the same time as an upper surface of the n-type nitride semiconductor layer 11 which is a light emitting surface. It may be made of a metal having high reflectance as a layer for improving the effective luminance toward. The highly reflective ohmic contact layer is formed of a structure including at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and combinations thereof. It is preferable.

A conductive bonding layer 15 may be selectively formed between the highly reflective ohmic contact layer 14 and the conductive support substrate 16. The conductive bonding layer 15 is for further strengthening the contact between the highly reflective ohmic contact layer 14 and the conductive support substrate 16, and may be made of a conductive material that is generally adhesive. As the furnace, it is preferable to use a metal binder selected from the group consisting of Au-Sn, Sn, In, Au-Ag and Pb-Sn. In another embodiment in which the highly reflective ohmic contact layer 14 is not formed, the conductive bonding layer 15 may be formed on the p-type nitride semiconductor layer 13 and the conductive support substrate 16.

The conductive support substrate 16 is made of a conductive material, and typically, a silicon substrate or a metal substrate may be used. With the sapphire substrate removed, the light emitting structure of the n-type nitride semiconductor layer 11, the active layer 12 and the p-type nitride semiconductor layer 13 has a very small size, which makes it difficult to apply to practical applications. Since there may be a problem, the conductive support substrate 16 serves to support the light emitting structure so that the vertical nitride semiconductor light emitting device has an appropriate size, and also serves as a part of the p-side electrode. .

The transparent electrode layer 18 diffuses the current injected from the n-side electrodes 17 and 19 to prevent concentration of current at the lower portion of the n-side electrodes 17 and 19. In this embodiment, the transparent electrode layer 18 is formed between the n-side electrodes 17 and 19 and the n-type nitride semiconductor layer 11, so that the current is more efficiently compared to the conventional vertical structured nitride semiconductor light emitting device described above. The density can be dispersed.

The transparent electrode layer 18 must have conductivity capable of diffusing current, and is formed on the top surface of the n-type nitride semiconductor layer 11 that is a light emitting surface, and thus must transmit light well. To this end, the transparent electrode layer 18 is formed of indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂ ), zinc oxide (ZnO), and indium zinc oxide (IZO). It may be formed of at least one layer consisting of an oxide selected from the group consisting of.

The n-side electrodes 17 and 19 are formed in a portion of the upper surface of the transparent electrode layer 18. The n-side electrodes 17 and 19 include a reflective electrode layer 19 formed in direct contact with the upper surface of the transparent electrode layer 18. In this embodiment, the reflective electrode layer 19 which consists of one layer (1st layer) is provided. The one-layer reflective electrode layer 19 may be made of a material selected from the group consisting of Al, Ag, Pd, Pt having a high reflectance, and a compound containing the material. The reflective electrode layer 19 having the one-layer structure preferably has a thickness of 500 kPa to 5000 kPa in view of reflection efficiency and size. In the case where the reflective electrode layer 19 is made of a metal such as Al or Ag, which is susceptible to deterioration, it is preferable to form a compound with another metal in order to prevent a decrease in reflectance. Metals used to form the compound include Cu, Si, W, Mo, Co, Ni and the like.

The n-side electrode according to the present embodiment may include a bonding pad 17 for bonding wires or the like on the upper surface of the reflective electrode layer 19. The bonding pad 17 has a double layer structure including a Cr layer 19a formed on an upper surface of the reflective electrode layer 19 and an Au layer 19b formed on an upper surface of the Cr layer 19a, as in a conventional bonding pad. It can be formed as.

As described above, in the vertical nitride semiconductor light emitting device according to the present invention, the transparent electrode layer 18 is formed on the top surface of the n-type nitride semiconductor light emitting device 11 to prevent the current from being concentrated on the n-side electrodes 17 and 19. Improvement to allow the current to be spread evenly. In addition, by adopting an n-side electrode structure having a reflective electrode layer 19 in contact with the transparent electrode layer 18, the light generated in the active layer 12 is prevented from being absorbed by the n-side electrode and the reflective electrode layer 19 By reflecting the light through the () can improve the brightness of the light emitting device.

3 is a side sectional view showing a vertical structure nitride semiconductor light emitting device according to a second embodiment of the present invention. The vertical nitride semiconductor light emitting device 20 according to the second embodiment shown in FIG. 3 includes a reflective electrode layer 19 having a double layer structure as compared with the first embodiment shown in FIG. It is characterized by having a structure in which the layer (15 in FIG. 2) is omitted. In the description of the various embodiments described below, the description of the same components as those of the above-described first embodiment will be omitted.

In the vertical nitride semiconductor light emitting device 20 according to the second embodiment of the present invention, the n-side electrode includes a reflective electrode layer 19 and a bonding pad 17 having a double layer structure. The double-layered reflective electrode layer 19 includes a first layer 19a made of a material selected from the group consisting of Al, Ag, Pd, Pt having a high reflectance, and a compound containing the material, and the first layer 19a. And a second layer 19b formed of a material selected from the group consisting of Ti, Ni, Pt, Pd and Rh. The first layer 19a has the same component and thickness as the reflective electrode layer of the one-layer structure shown in FIG. The second layer 19b is a layer which is formed in order to prevent the first layer 19a from generating a defect due to heat or the like, and preferably has a thickness of 50 kPa to 500 kPa.

The second embodiment of the present invention has a form in which the conductive support substrate 16 is provided directly on the lower surface of the highly reflective ohmic contact layer 14 without using the conductive bonding layer (15 in FIG. 2). In this case, the conductive support substrate 16 may be formed directly on the bottom surface of the highly reflective ohmic contact layer 14 to a predetermined thickness by using a general deposition method, sputtering or plating method.

4 is a side sectional view showing a vertical structure nitride semiconductor light emitting device according to a third embodiment of the present invention. The vertical nitride semiconductor light emitting device 30 according to the fourth embodiment shown in FIG. 4 is provided with a bonding electrode layer 19 having a triple layer structure and a bonding pad, as compared with the first embodiment shown in FIG. It does not include (17 of FIG. 2), and has the structure in which the highly reflective ohmic contact layer (14 of FIG. 2) and the conductive bonding layer (15 of FIG. 2) were omitted.

In the vertical nitride semiconductor light emitting element 30 according to the third embodiment of the present invention, the n-side electrode is made of a reflective electrode layer 19 having a triple layer structure. The triple layer structured reflective electrode layer 19 includes a first layer 19a made of a material selected from the group consisting of Al, Ag, Pd, Pt having a high reflectance, and a compound including the material, and the first layer ( A second layer 19b formed on 19a) and selected from the group consisting of Ti, Ni, Pt, Pd and Rh and from a group consisting of Au, Pt and Rh formed on the second layer 19b It has a structure including a third layer 19c made of the selected material. The first layer 19a has the same components and thickness as the reflective electrode layer of the one-layer structure shown in FIG. 2, and the second layer 19b is formed from the second layer of the reflective electrode layer of the embodiment shown in FIG. 3. Have the same components and thickness. The third layer 19c is a layer formed to protect the first layer 19a and the second layer 19b, and preferably has a thickness of 200 kPa to 2000 kPa.

In the third embodiment of the present invention, the bonding pad can be omitted for the n-side electrode. This is because the material forming the third layer 19c is made of a metal suitable for wire bonding. Therefore, when the third layer 19c is formed to a sufficient thickness, the third layer 19c included in the reflective electrode layer may be used as a bonding pad without the need for a separate bonding pad. Of course, a bonding pad made of Cr / Au described in the first and second embodiments may be further formed on the third layer 19c.

In the third embodiment, the conductive support substrate 16 is directly formed on the lower surface of the p-type nitride semiconductor layer 13 without forming the highly reflective ohmic contact layer 14 and without using the conductive bonding layer (15 in FIG. 2). ) Is provided. This is because the conductive support substrate 16 does not require a separate highly reflective ohmic contact layer when the conductive support substrate 16 is made of a metal material capable of forming a good ohmic contact. In the present embodiment, the conductive support substrate 16 may be formed directly on the bottom surface of the p-type nitride semiconductor layer 13 to a predetermined thickness by using a general deposition method, sputtering or plating method.

5 is an enlarged side sectional view showing a portion of a vertical nitride semiconductor light emitting device according to a fourth embodiment of the present invention. The vertical nitride semiconductor light emitting element 40 according to the fourth embodiment shown in FIG. 5 includes an n-side electrode made of a reflective electrode layer 19 having a three-layer structure. In the present embodiment, the components and the thickness of each layer are the same as those of the first to third layers described in the above-described third embodiment, except that the structure of each layer has a difference. That is, the second layer 19b may be formed to have a structure surrounding the top and side surfaces of the first layer 19a in order to further improve the effect of preventing deterioration of the first layer 19a. The third layer 19c may also be formed to surround the top and side surfaces of the second layer 19b. Such a structure can be applied to further improve the effect of the upper layer protecting the lower layer.

6 is an enlarged side sectional view showing a portion of a vertical structure nitride semiconductor light emitting device according to a fifth embodiment of the present invention. The vertical nitride semiconductor light emitting device 50 according to the fifth embodiment of the present invention has a thin thickness between the transparent electrode layer 18 and the reflective electrode layer 19 in the third embodiment of the present invention shown in FIG. The adhesive layer 21 has a structure in which it is added. The adhesive layer 21 is to improve adhesion between the transparent electrode layer 19 and the reflective electrode layer 130 and is made of a material selected from the group consisting of Ni, Ti, Rh, and Cr. The adhesive layer 21 is preferably formed as thin as possible so as not to lower the reflectivity of the reflective electrode layer 19, for example, preferably having a thickness of 1 kPa to 100 kPa. The adhesive layer 21 may be applied to all of the first to fourth embodiments of the present invention described above.

As described above, according to the present invention, by forming a transparent electrode layer on the upper surface of the n-type nitride semiconductor light emitting device to prevent the current is concentrated in the lower portion of the n-side electrode and uniform current diffusion is achieved There is an effect that can improve the brightness.

In addition, by adopting an n-side electrode structure having a reflective electrode layer in contact with the upper surface of the transparent electrode layer, the light generated by the active layer is prevented from being absorbed by the n-side electrode and reflects light through the reflective electrode layer, thereby increasing the luminance of the light emitting device. There is an effect to improve.

Claims (20)

an n-type nitride semiconductor layer; An active layer formed on the bottom surface of the n-type nitride semiconductor layer; A p-type nitride semiconductor layer formed on the lower surface of the active layer; A transparent electrode layer formed on an upper surface of the n-type nitride semiconductor layer; And And a n-side electrode formed on a portion of an upper surface of the transparent electrode layer and having a reflective electrode layer formed of at least one layer. The method of claim 1, wherein the transparent electrode layer, At least one layer of an oxide selected from the group consisting of indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂ ), zinc oxide (ZnO) and indium zinc oxide (IZO) Vertical structure nitride semiconductor light emitting device comprising a. The method of claim 1, wherein the reflective electrode layer, And a first layer comprising a material selected from the group consisting of Al, Ag, Pd, Pt, and a compound comprising the material. The method of claim 3, The first layer has a thickness of 500 ~ 5000 소자 vertical nitride semiconductor light emitting device. The method of claim 3, The compound is a vertical nitride semiconductor light emitting device comprising at least one material selected from the group consisting of Cu, Si, W, Mo, Co and Ni. The method of claim 3, wherein the reflective electrode layer, And a second layer formed on the first layer and formed of a material selected from the group consisting of Ti, Ni, Pt, Pd, and Rh. The method of claim 6, And the second layer has a structure surrounding a top surface and a side surface of the first layer. The method of claim 6, And the second layer has a thickness of 50 kV to 500 kV. The method of claim 6, wherein the reflective electrode layer, And a third layer formed on the second layer and made of a material selected from the group consisting of Au, Pt, and Rh. The method of claim 9, And the third layer has a structure surrounding a top surface and a side surface of the second layer. The method of claim 9, And the third layer has a thickness of 200 mW to 2000 mW. The method of claim 1, Vertical nitride semiconductor light emitting device, characterized in that the adhesive layer is formed between the transparent electrode layer and the reflective electrode layer. The method of claim 12, And the adhesive layer is formed of a material selected from the group consisting of Ni, Ti, Rh and Cr. The method of claim 12, The adhesive layer is a vertical nitride semiconductor light emitting device, characterized in that having a thickness of 1Å to 100Å. The method of claim 1, The n-side electrode further comprises a bonding pad formed on the reflective electrode layer. The method of claim 15, And the bonding pads are formed of a Cr layer formed on the reflective electrode layer and an Au layer formed on the Cr layer. The method of claim 1, And a conductive support substrate formed under the p-type nitride semiconductor layer. The method of claim 17, And a conductive bonding layer formed between the conductive support substrate and the p-type nitride semiconductor layer. The method of claim 1, And a high reflective ohmic contact layer formed on the bottom surface of the p-type nitride semiconductor layer. The method of claim 19, The highly reflective ohmic contact layer includes at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and combinations thereof. Vertical structure nitride semiconductor light emitting device.

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