KR20070007463A - Depostion apparatus - Google Patents

Depostion apparatus Download PDF

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KR20070007463A
KR20070007463A KR1020050062099A KR20050062099A KR20070007463A KR 20070007463 A KR20070007463 A KR 20070007463A KR 1020050062099 A KR1020050062099 A KR 1020050062099A KR 20050062099 A KR20050062099 A KR 20050062099A KR 20070007463 A KR20070007463 A KR 20070007463A
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deposition
opening
source
vapor
adjustment means
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KR1020050062099A
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Korean (ko)
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KR101213094B1 (en
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정광진
김민구
박세표
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엘지전자 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A deposition apparatus is provided to maintain a deposition speed constantly by adjusting a diameter of an opening through which a vapor of deposition material is discharged. A deposition apparatus includes a chamber in which a process of forming a deposition film on a surface of a substrate is performed, and a deposition source(1) installed in the chamber. An opening adjusting member is installed to a lower portion of an opening of a cell cap configuring the deposition source. The opening adjusting member consists of unit members moved along a frame in a circumference and diameter direction by a drive unit(D). A sensor(R) for detecting a thickness of the deposition film is installed to one side of the deposition source.

Description

증착 장치{Depostion apparatus}Deposition apparatus

도 1은 일반적인 포인트 증착원의 단면도.1 is a cross-sectional view of a general point deposition source.

도 2는 본 발명에 따른 증착 장치 내에 장착된 포인트 증착원의 단면도.2 is a cross-sectional view of a point deposition source mounted in a deposition apparatus according to the present invention.

도 3은 개구 조정 수단의 저면도.3 is a bottom view of the opening adjustment means.

도 4는 개구 조정 수단의 제어 과정을 설명하기 위한 도면.4 is a view for explaining a control process of the opening adjustment means;

본 발명은 유기 전계 발광층의 형성을 위한 증착 장치에 관한 것으로서, 특히 증착 재료 증기가 배출되는 증착원의 개구의 면적을 조절하여 일정한 증착 속도를 유지할 수 있는 수단을 구비한 증착 장치에 관한 것이다. The present invention relates to a deposition apparatus for forming an organic electroluminescent layer, and more particularly, to a deposition apparatus having a means capable of maintaining a constant deposition rate by adjusting the area of an opening of a deposition source through which vapor deposition material is discharged.

열적 물리적 기상 증착은 증착 재료(예를 들어, 유기물)의 증기로 기판 표면에 발광층을 형성하는 기술로서, 증착원(deposition source) 내에 수용된 증착 재료는 기화 온도까지 가열되며, 증착 재료의 증기는 증착원 밖으로 이동한 후 코팅될 기판 상에서 응축된다. 이러한 증착 공정은 증착 재료를 수용하는 증착원 및 코팅될 기판을 구비한 10-7 내지 10-2 Torr 범위의 압력 상태의 진공 챔버 내에서 진행 된다. Thermal physical vapor deposition is a technique of forming a light emitting layer on the surface of a substrate with vapor of a deposition material (eg, organic material), in which the deposition material contained in the deposition source is heated to the vaporization temperature, and the vapor of the deposition material is deposited. After moving out of the circle, it condenses on the substrate to be coated. This deposition process is carried out in a vacuum chamber under pressure ranging from 10 −7 to 10 −2 Torr with a deposition source containing the deposition material and a substrate to be coated.

일반적으로, 증착 재료를 수용하는 용기인 증착원(deposition source)은 전류가 벽(부재)들을 통과할 때 온도가 증가하는 전기적 저항 재료로 만들어진다. 증착원에 전류가 인가되면, 그 내부의 증착 재료는 증착원의 벽으로부터의 방사열 및 벽과의 접촉으로부터의 전도열에 의하여 가열된다. 증착원의 상부 부재에는 기화된 재료 증기가 외부로 배출되는 증기 배출 개구(vapor efflux aperture)가 형성되어 있다.Generally, a deposition source, which is a container containing a deposition material, is made of an electrically resistive material that increases in temperature as current passes through walls (members). When a current is applied to the deposition source, the deposition material therein is heated by radiant heat from the walls of the deposition source and conduction heat from contact with the walls. A vapor efflux aperture through which the vaporized material vapor is discharged to the outside is formed in the upper member of the evaporation source.

증착원은 그 형상에 따라 포인트 증착원(point source) 및 선형 증착원(linear source)으로 구분된다. 도 1은 일반적인 포인트 증착원의 단면도로서, 원통형의 측벽 부재(1B), 원판형의 바닥 부재(1C), 셀 캡(1A) 및 원통형 셀(1D)로 이루어진 포인트 증착원(1)의 내부 구성을 도시하고 있다. 셀 캡(1A) 및 셀(1D)로 인하여 형성되는 내부 공간에는 증착 재료(M)인 유기물이 수용되어 있다.The deposition source is classified into a point source and a linear source according to its shape. 1 is a cross-sectional view of a general point evaporation source, the internal configuration of the point evaporation source 1 consisting of a cylindrical sidewall member 1B, a disc shaped bottom member 1C, a cell cap 1A and a cylindrical cell 1D. It is shown. In the internal space formed by the cell cap 1A and the cell 1D, an organic material, which is a deposition material M, is accommodated.

측벽 부재(1B) 내부, 즉 측벽 부재(1B)와 셀(1D) 사이에는 셀(1D)의 내부 공간에 수용된 증착 재료(M)를 가열하기 위한 수단(1B-1; 예를 들어, 전원에 연결된 발열 코일)이 위치하고 있다. Means for heating the deposition material M contained in the interior space of the cell 1D, i.e., in a power source, inside the sidewall member 1B, i.e., between the sidewall member 1B and the cell 1D. Connected heating coil) is located.

셀 캡(1A)의 중앙부에는 개구(1A-1)가 형성되어 있으며, 측벽 부재(1B)에 장착된 가열 수단(1B-1)에서 발생된 열에 의하여 가열, 기화된 증착 재료(M)의 증기는 이 개구(1A-1)를 통하여 외부, 즉 기판(챔버 내부에 장착된 상태)을 향하여 배출된다. An opening 1A-1 is formed at the center of the cell cap 1A, and vapor of the vapor deposition material M heated and vaporized by the heat generated by the heating means 1B-1 attached to the side wall member 1B. Is discharged toward the outside through the opening 1A-1, that is, the substrate (the state mounted inside the chamber).

미설명 부호 "11"은 셀 캡(1A)으로 전달된 열의 외부 발산을 막기 위하여 측 벽 부재(1B) 상단에 고정된 금속성 재질의 원판형 커버이며, "11-1"은 셀 캡(1A)의 개구(1A-1)와 대응하는, 커버(11)에 형성된 재료 증기 배출용 개구이다. Reference numeral “11” denotes a disc shaped cover made of a metallic material fixed to the top of the side wall member 1B to prevent external diffusion of heat transferred to the cell cap 1A, and “11-1” denotes a cell cap 1A. Is an opening for discharging material vapor formed in the cover 11, which corresponds to the opening 1A-1.

한편, 공정이 진행됨에 따라 증착원 내에 수용된 증착 재료의 양이 적정량 이하로 줄어들며, 따라서 증착 재료가 충만되어 있는 새로운 증착원으로 교체해야 한다. 그러나, 증착 공정이 진행되는 챔버의 내부 공간은 진공 상태이기 때문에 증착원을 교체할 때마다 챔버 내의 진공 상태를 해제하여야 하며, 또한 새로운 증착원이 장착된 후에는 챔버 내부를 다시 진공 상태로 조성해야 하는 문제점이 발생한다. On the other hand, as the process proceeds, the amount of deposition material contained in the deposition source is reduced to an appropriate amount or less, and therefore, a new deposition source filled with the deposition material should be replaced. However, since the internal space of the chamber where the deposition process proceeds is a vacuum state, the vacuum in the chamber must be released each time the deposition source is replaced, and the chamber interior must be vacuumed again after the new deposition source is installed. The problem arises.

이러한 상황을 방지하기 위하여 도 1에 도시된 다수의 증착원들(약 6개)이 내부에 배치된 리볼버(revolver)를 이용하며, 이러한 리볼버를 진공 챔버 내에 장착함으로서 각 증착원 내에 담겨진 증착 재료가 모두 소모될 때까지 증착 공정을 지속적으로 수행할 수 있다. In order to prevent this situation, a plurality of deposition sources (about six) shown in FIG. 1 use a revolver disposed therein, and the deposition material contained in each deposition source is mounted by mounting such a revolver in a vacuum chamber. The deposition process can be continued until all are exhausted.

이상과 같은 구조를 갖는 증착원을 통하여 진행되는 증착 공정 과정에서 발생되는 문제점은 다음과 같다. Problems generated in the deposition process proceeds through the deposition source having the above structure is as follows.

증착 재료의 종류에 따라 발생된 증착 재료 증기의 조건들이 다르게 나타나며, 따라서 증착원의 셀 내에 담겨져 있는 증착 재료(유기물)의 종류에 따라 증착 재료 증기가 배출되는 셀 캡(1A)의 개구(1A-1)의 직경을 달리 하여야 한다. The conditions of the vapor deposition material vapor generated according to the type of vapor deposition material are different, and therefore, the opening 1A- of the cell cap 1A through which the vapor deposition material vapor is discharged according to the type of vapor deposition material (organic material) contained in the cell of the vapor deposition source. The diameter of 1) should be different.

설정된 시간에 기판 표면에 설정된 두께의 증착막을 형성하기 위해서는 증착 속도가 일정해야 하며, 따라서 증착 재료의 종류에 따라 셀 캡(1A)의 개구(1A-1)의 직경은 달라져야 한다. 그러나, 여러 종류의 증착 재료에 맞추어 다양한 개구 직경 을 갖는 셀 캡들을 제조하고 구비하는 것은 바람직하지 못하다.In order to form a deposited film having a predetermined thickness on the surface of the substrate at a predetermined time, the deposition rate must be constant, and therefore, the diameter of the opening 1A-1 of the cell cap 1A must be varied according to the type of deposition material. However, it is not desirable to manufacture and provide cell caps having various opening diameters for various kinds of deposition materials.

한편, 증착원을 이용하여 기판에 대한 증착 공정이 진행되는 과정에서, 증착 재료 증기가 통과하는 셀 캡(1A)의 개구(1A-1) 주변 표면에 증착 재료 증기가 응고된다. On the other hand, in the process of the deposition process for the substrate using the deposition source, the deposition material vapor is solidified on the surface around the opening 1A-1 of the cell cap 1A through which the deposition material vapor passes.

셀 캡(1A)의 개구(1A-1) 주변에 증착 재료 증기가 응고됨에 따라 개구(1A-1)의 단면적이 점차적으로 감소하며, 따라서 증착원으로부터 단위 시간당 배출되는 증착 재료 증기의 양 역시 줄어들게 된다. 이러한 이유로 인하여 기판 표면에 설정된 두께의 증착막이 형성되는 시간이 증가, 즉 증착 속도가 현저히 감소할 수 밖에 없다. As the deposition material vapor solidifies around the opening 1A-1 of the cell cap 1A, the cross-sectional area of the opening 1A-1 gradually decreases, so that the amount of vapor deposition material vapor released per unit time from the deposition source is also reduced. do. For this reason, the time for which the deposition film having the thickness set on the substrate is formed increases, that is, the deposition rate is inevitably reduced.

본 발명은 증착 공정에서 나타나는 상술한 문제점을 해결하기 위한 것으로서, 증착 재료의 종류 및 셀 캡의 개구 주변에 증착 재료 증기가 응고되는 경우에도 일정한 증착 속도를 유지시킬 수 있는 증착 장치를 제공하는데 그 목적이 있다. The present invention is to solve the above-described problems in the deposition process, to provide a deposition apparatus capable of maintaining a constant deposition rate even when the vapor deposition material vapor solidifies around the type of deposition material and the opening of the cell cap. There is this.

상술한 목적을 실현하기 위한 본 발명에 따른 증착 장치는 증착원을 구성하는 셀 캡의 개구 하부에 설치된 개구 조절 수단을 포함하며, 이 개구 조절 수단은 구동부에 의하여 프레임을 따라 원주 방향 및 반경 방향으로 이동 가능한 단위 부재들로 이루어져 중앙부의 개방 정도가 조절된다. The vapor deposition apparatus according to the present invention for achieving the above object includes an opening adjusting means provided in the lower portion of the opening of the cell cap constituting the deposition source, the opening adjusting means in the circumferential direction and radial direction along the frame by the drive The opening of the central part is controlled by the movable unit members.

본 발명에 따른 장치는 증착원의 일측에 설치된 증착막 두께 감지 센서 및 증착막 두께 감지 센서의 신호에 따라 증착 속도를 계산하며, 계산된 증착 속도에 따라 개구 조절 수단 구동용 구동부를 제어하는 제어부를 더 포함한다.The apparatus according to the present invention further includes a control unit for calculating a deposition rate according to a signal of a deposition film thickness sensor and a deposition film thickness sensor installed at one side of the deposition source, and controlling the driving unit for driving the opening adjustment means according to the calculated deposition rate. do.

첨부된 도면을 참고로 한 바람직한 실시예의 상세한 설명에 의하여 본 발명은 보다 완전하게 이해될 것이다. The invention will be more fully understood by the detailed description of the preferred embodiment with reference to the attached drawings.

도 2는 본 발명에 따른 증착 장치 내에 장착된 포인트 증착원의 단면도, 도 도 3은 개구 조정 수단의 저면도로서, 셀 캡 및 개구에 장착된 개구 조정 수단의 관계를 도시한다. 도 3에서는 본 발명과 관련 없는 부분에 대해서는 도면 부호를 부여하지 않았다. Fig. 2 is a sectional view of a point deposition source mounted in the deposition apparatus according to the present invention, and Fig. 3 is a bottom view of the opening adjustment means, showing the relationship between the cell cap and the opening adjustment means mounted to the opening. 3, reference numerals are not given to parts not related to the present invention.

본 발명에 따른 증착 장치의 가장 큰 특징은 증착원의 셀 캡에 개구 조정 수단을 장착한 것이다. 도 3에 도시된 바와 같이, 개구 조정 수단은 셀 캡의 개구 하부에 장착되며, 프레임(도시되지 않음)에 장착되어 원주 방향으로의 이동 및 반경 방향으로의 이동이 가능한 단위 부재들로 이루어진다. 따라서 개구 조정 수단은 이동 정도에 따라 중앙부의 개방 정도를 조절할 수 있는 구조를 갖는다.The biggest feature of the deposition apparatus according to the present invention is that the opening adjusting means is attached to the cell cap of the deposition source. As shown in Fig. 3, the opening adjustment means is mounted to the lower part of the opening of the cell cap, and is made of unit members mounted on a frame (not shown) to enable movement in the circumferential direction and in the radial direction. Therefore, the opening adjustment means has a structure that can adjust the opening degree of the central portion in accordance with the movement degree.

한편, 도 2 및 도 3에 도시된 개구 조정 수단은 카메라를 구성하는 한 장치인 셔터 장치의 구성과 작동 원리와 동일하며, 따라서 이에 대한 상세한 설명은 생략한다. On the other hand, the opening adjustment means shown in Figs. 2 and 3 is the same as the configuration and operating principle of the shutter device, which is a device constituting the camera, and thus a detailed description thereof will be omitted.

이와 같은 개구 조정 수단은 구동부의 가동에 따라 단위 부재들이 회전하여 중앙부의 개방 정도가 조절된다. 개구 조정 수단(S)의 제어를 위한 주변 구성을 도 4를 통하여 설명한다. In the opening adjustment means, the unit members are rotated according to the operation of the driving unit to adjust the opening degree of the center portion. The peripheral structure for control of the opening adjustment means S is demonstrated through FIG.

도 4는 개구 조정 수단의 제어 과정을 설명하기 위한 도면으로서, 편의상 증착원(1)을 박스 형태로 도시하였다.4 is a view for explaining the control process of the opening adjustment means, for convenience, the deposition source 1 is shown in the form of a box.

증착원(1)의 상부 일측, 즉 증착 재료 증기가 공급되는 기판(도시되지 않음)의 일측에는 증착막 두께 감지 센서(R; quartz crystal sensor; 이하, 편의상 "센서"라 칭함)가 장착되어 있으며, 이 센서(R)는 제어부(C)에 연결되어 있다. 또한, 제어부(C)는 개구 조정 수단(S)의 각 단위 부재를 구동하는 구동부(D)에 연결되어 있다. On the upper side of the deposition source 1, that is, one side of the substrate (not shown) to which the vapor deposition material is supplied, a deposition film thickness sensor (R; quartz crystal sensor; hereinafter referred to as “sensor” for convenience) is mounted. This sensor R is connected to the control unit C. Moreover, the control part C is connected to the drive part D which drives each unit member of the opening adjustment means S. FIG.

한편, 증착 공정이 진행되는 과정에서 이 센서(R)의 표면에도 증착막이 형성된다. 증착 공정이 진행됨에 따라 센서(R)의 표면에 형성된 증착막의 두께 및 질량이 증가하게 되며, 질량의 증가에 따라서 센서(R)의 진동 주파수가 변화하게 된다. 따라서 제어부(C)는 센서(R)의 진동 주파수의 변화에 따라 변화되는 증착막의 질량을 하기 식에 의하여 결정할 수 있다. In the meantime, a deposition film is formed on the surface of the sensor R during the deposition process. As the deposition process proceeds, the thickness and mass of the deposited film formed on the surface of the sensor R increase, and the vibration frequency of the sensor R changes as the mass increases. Therefore, the controller C may determine the mass of the deposited film that changes according to the change in the vibration frequency of the sensor R by the following equation.

Figure 112005037301834-PAT00001
Figure 112005037301834-PAT00001

여기서, ω는 진동 주파수, k는 스프링 상수, m은 증착막의 질량을 각각 나타낸다.Is the vibration frequency, k is the spring constant, and m is the mass of the deposited film.

위의 식에 따르면, 센서(R)의 표면에 형성되는 증착막의 질량이 증가함에 따라 센서의 진동 주파수는 작아지며, 따라서 센서(R)에 의하여 감지된 진동 주파수 데이터를 통하여 제어부(C)는 증착막의 형성 속도(증착 속도)를 판단할 수 있다. According to the above equation, as the mass of the deposition film formed on the surface of the sensor R increases, the vibration frequency of the sensor decreases, so that the control unit C controls the deposition film through the vibration frequency data sensed by the sensor R. The formation rate (deposition rate) of can be determined.

어떠한 이유, 예를 들어 개구 조정 수단(S)의 중앙부에 형성되는 개방부 주변에 증착 재료 증기가 응고(즉, 직경 감소)되어 증착 속도가 설정 값 이하임을 판 단하면, 제어부(C)는 구동부(D)에 신호를 전달하여 구동부(D)를 가동시키며, 따라서 개구 조정 수단(S)의 단위 부재들이 이동하여 그 중앙부의 개방 정도가 증가된다. 이 결과, 증착 재료의 배출 속도, 즉 증착 속도가 증가된다. If for some reason, for example, the vapor deposition material vapor solidifies (i.e., decreases in diameter) around the opening formed in the center of the opening adjustment means S, and determines that the deposition rate is less than or equal to the set value, the controller C controls the drive unit. A signal is transmitted to (D) to operate the driving unit D, and thus the unit members of the opening adjusting means S move to increase the opening degree of the central portion thereof. As a result, the discharge rate of the deposition material, that is, the deposition rate is increased.

이러한 개구 조정 수단(S)의 작동에 따라 증착 속도가 설정된 값과 동일하게 나타날 때, 제어부(C)는 구동부(D)로 신호를 전달하여 구동부(D) 및 개구 조정 수단(S)의 작동을 중지시킨다. When the deposition rate is the same as the set value according to the operation of the opening adjustment means (S), the control unit (C) transmits a signal to the driving unit (D) to stop the operation of the driving unit (D) and the opening adjustment means (S). Stop it.

이러한 과정이 반복 실시됨으로서 본 발명에 따른 증착 장치는 설정된 증착 속도로 증착 공정을 계속 진행할 수 있다.By repeating this process, the deposition apparatus according to the present invention can continue the deposition process at a set deposition rate.

본 발명은 증착 공정이 진행되는 과정에서 증착 재료 증기가 배출되는 개구의 직경을 조절함으로서 항상 일정한 증착 속도를 유지할 수 있으며, 그에 따라 기판 표면에 균일한 증착막을 형성할 수 잇는 효과를 얻을 수 있다. The present invention can maintain a constant deposition rate at all times by adjusting the diameter of the opening through which the vapor deposition material is discharged during the deposition process, thereby obtaining an effect of forming a uniform deposition film on the substrate surface.

위에 설명된 예시적인 실시예는 제한적이기보다는 본 발명의 모든 관점들 내에서 설명적인 것이 되도록 의도되었다. 따라서 본 발명은 본 기술 분야의 숙련된 자들에 의하여 본 명세서 내에 포함된 설명으로부터 얻어질 수 있는 많은 변형과 상세한 실행이 가능하다. 다음의 청구범위에 의하여 한정된 바와 같이 이러한 모든 변형과 변경은 본 발명의 범위 및 사상 내에 있는 것으로 고려되어야 한다. The illustrative embodiments described above are intended to be illustrative within all aspects of the invention rather than limiting. Accordingly, the present invention is capable of many modifications and implementations that can be made by those skilled in the art from the description contained herein. All such modifications and variations are considered to be within the scope and spirit of the invention as defined by the following claims.

Claims (2)

기판 표면으로의 증착막 형성 공정이 진행되는 챔버 및 챔버 내부에 설치된 증착원을 포함하는 증착 장치에 있어서,A deposition apparatus comprising a chamber in which a deposition film forming process on a surface of a substrate is performed and a deposition source provided in the chamber, 증착원을 구성하는 셀 캡의 개구 하부에 설치된 개구 조절 수단을 더 포함하되, 개구 조절 수단은 구동부에 의하여 프레임을 따라 원주 방향 및 반경 방향으로 이동 가능한 단위 부재들로 이루어져 중앙부의 개방 정도가 조절되는 증착 장치.Opening means is further provided in the lower portion of the opening of the cell cap constituting the evaporation source, the opening adjustment means is made of a unit member movable in the circumferential direction and the radial direction along the frame by the drive unit is adjusted the opening degree Deposition apparatus. 제 1 항에 있어서, The method of claim 1, 증착원의 일측에 설치된 증착막 두께 감지 센서; 및Deposition film thickness sensor installed on one side of the deposition source; And 증착막 두께 감지 센서의 신호에 따라 증착 속도를 계산하며, 계산된 증착 속도에 따라 개구 조절 수단 구동용 구동부를 제어하는 제어부를 더 포함하는 증착 장치.And a controller configured to calculate a deposition rate according to a signal of the deposition film thickness sensor and to control a driving unit for driving the opening adjustment means according to the calculated deposition rate.
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US8616930B1 (en) 2012-06-15 2013-12-31 Samsung Display Co., Ltd. Depositing apparatus and method for manufacturing organic light emitting diode display using the same
CN110551980A (en) * 2019-10-18 2019-12-10 东莞市能特自动化科技有限公司 Variable aperture crucible and OLED film forming system

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JP2000107128A (en) 1998-10-08 2000-04-18 Koonan:Kk Ophthalmic device, and opening/closing means for its opening

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US8616930B1 (en) 2012-06-15 2013-12-31 Samsung Display Co., Ltd. Depositing apparatus and method for manufacturing organic light emitting diode display using the same
CN110551980A (en) * 2019-10-18 2019-12-10 东莞市能特自动化科技有限公司 Variable aperture crucible and OLED film forming system
CN110551980B (en) * 2019-10-18 2024-05-28 东莞市能特自动化科技有限公司 Variable aperture crucible and OLED film forming system

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