KR20070005451A - Manufacturing method of blankmask and photomask for gray-tone - Google Patents

Abstract

A method for manufacturing a gray-tone blank mask and a method for manufacturing a gray-tone photo mask are provided to uniformly control the thickness of a resist film remaining in a semi-transmissive region during an exposure process and a developing process, by using a semi-transmissive film instead of a slit pattern. A light shielding layer(104b) is formed on a transparent substrate(102). The light shielding layer is pattern-etched to form an opening for exposing a surface of the transparent substrate. A semi-transmissive layer(110a) is formed on the resultant substrate including the opening. A resist film(112a) is formed on the semi-transmissive layer. An anti-reflective layer(106b) is capable of being formed on the light shielding layer, wherein the anti-reflective layer has the same pattern as the light shielding layer.

Description

Manufacturing method of blankmask and photomask for gray-tone

1 is a top view schematically showing a conventional slit pattern photomask.

2 is a schematic top view of a conventional gray tone photomask.

3A to 3D are views for explaining a gray tone blank mask and a photomask manufacturing method according to the prior art.

4A and 4B are top views schematically showing that the alignment of the gray tone blank mask and the photomask manufactured by the prior art is displaced in the Y direction and the X direction.

5A and 5B are diagrams for describing a gray tone blank mask and a photomask manufacturing method according to another conventional technology.

6 is a schematic cross-sectional view of a general sputtering equipment.

7A to 7F are views for explaining a method of manufacturing a gray tone blank mask and a photo mask according to the first embodiment of the present invention.

8 is a cross-sectional view schematically showing the general form of the step coverage.

9A to 9D are diagrams for describing a method of manufacturing a gray tone blank mask and a photo mask according to a second embodiment of the present invention.

10A through 10F are diagrams for describing a method of manufacturing a gray tone blank mask and a photo mask according to a third embodiment of the present invention.

11A through 11D are diagrams for describing a method of manufacturing a gray tone blank mask and a photo mask according to a fourth embodiment of the present invention.

<Description of Symbols for Major Parts of Drawings>

102, 302 ... transparent substrate 104, 304 ... shading film

106, 306 ... Antireflective film 110, 310 ... Semi-permeable film

200, 400 ... shielding area 212, 412 ... transmission area

216, 416 ... transflective zones 222, 222 ', 422, 422' ... photomask

The present invention relates to a method for manufacturing a gray tone blank mask and a photomask, and more particularly, by using a semi-transmissive film instead of a conventional slit pattern, it is possible to uniformly control the thickness of the resist film remaining by the semi-transmissive area during the exposure and development processes. The present invention relates to a graytone blank mask and a photomask manufacturing method.

Recently, due to the rapid development of thin film transistor liquid crystal display (TFT-LCD), the application range is expanded, it is required to develop a cheaper and more productive manufacturing process technology. In particular, TFT-LCDs deposit or apply numerous films and pattern them by photolithography processes, where the number of photomasks used is becoming a measure of process simplification. Because one cycle of photolithography proceeds with a single photomask, a significant reduction in manufacturing costs can be achieved by reducing the number of photomasks by only one. Therefore, research on this is being actively conducted.

The TFT-LCD consists of a color filter panel, an active panel, and a liquid crystal filled between the two panels. In the active panel, a TFT composed of a gate, a source, and a drain is located. Conventionally, a total of five photomasks should be used to manufacture the active panel TFTs. Recently, after forming a TFT, a TFT is manufactured from a total of four photomasks by forming an active region and a source / drain using a single photomask.

As an example of the photomask used to reduce the number of photomasks in the TFT-LCD manufacturing process, there is a slit pattern photomask as shown in FIG. 1. As shown in FIG. 1, the slit pattern photomask 20 generally includes a light shielding region 10, a transmission region 12, and a slit region 14. The light shielding region 10 is a portion where a source pattern 10a and a drain pattern 10b for defining the source and drain of the TFT are formed. The slit region 14 is a portion where the slit patterns 13 are formed to define a channel of the TFT.

In the slit pattern photomask 20 shown in FIG. 1, the exposure light that passes through the slit region 14 is diffracted by the slit pattern 13, thereby exhibiting a lower transmittance than when passing through the transmission region 12. Accordingly, the light corresponding to the resist on the TFT substrate is completely exposed by the light passing through the transmissive region 12, whereas the exposure amount of the resist on the TFT substrate, that is, the channel portion is exposed by the light passing through the slit region 14. Is reduced, resulting in incomplete exposure. As a result, there is a difference in solubility in the developing solution during the development process, so that a resist pattern is formed on a portion corresponding to the source pattern 10a and the drain pattern 10b while the resist of the fully exposed portion is removed, and incomplete exposure is performed. The remaining resist film remains in the channel region. Therefore, in the photolithography process using the slit pattern photomask 20, the source and the drain of the TFT are defined in the TFT substrate by the first etching using the thus formed resist pattern, and then the resist remaining film of the channel portion is ashed. By removing and opening the channel region and defining the channel of the TFT by the second etching using this resist pattern, the source, drain and channel of the TFT can be patterned using one photomask.

However, the slit pattern photomask 20 has a disadvantage in that it is difficult to uniformly control the diffracted light by the diffraction phenomenon of the light transmitted between the slit patterns 13. In particular, with the development of TFT-LCD technology, the slit pattern is becoming finer, which makes it more difficult to control the diffracted light passing between the slit patterns. This causes a problem that the thickness of the resist film remaining in the channel portion cannot be uniformly controlled, resulting in a large loss in terms of production and yield.

In order to solve this problem, a gray tone photomask using a semi-permeable membrane has been proposed. In the gray tone photomask, the variation in line width can be reduced compared to the slit pattern photomask by adjusting the thickness according to the material and the amount of permeation of the transflective film. As shown in FIG. 2, the gray tone photomask 22 is formed in the light blocking region 10 formed of the source pattern 10a and the drain pattern 10b corresponding to the source and the drain of the TFT, and the channel region of the TFT. The transflective area 16 and the transmissive area 12 which form the periphery of these area | regions are comprised.

The gray tone photomask 22 includes a gray tone blank mask composed of a semi-transmissive film 2, a light shielding film 3, an antireflection film 4, and a resist film 5 on the transparent substrate 1 as shown in FIG. 3A. It is formed by patterning. By the way, when selecting a material to be performed in a dry etching process, such as MoSi, W, Si as the material of the semi-permeable membrane 2, expensive dry etching equipment is required. In addition, when the light shielding film 3 and the anti-reflection film 4 are wet etched, it is difficult to control the transmittance and the optical phase difference due to the damage of the semi-permeable film 2 by the etchant. Should be secured. In addition, dry etching is difficult to apply to a photomask manufacturing process having a large area in reality.

In the case of forming the semi-transmissive film (2), the light shielding film (3), and the antireflection film (4) using chromium and chromium compounds which have been used as a blank mask material until now, the gray tone photomask (22) is used by wet etching instead of dry etching. ) Can be prepared. Hereinafter, the manufacturing process will be described with reference to FIGS. 3A to 3D. In each figure, the upper end is sectional drawing, the lower end is a top view, and sectional drawing corresponds to the cross section which cut along the horizontal dashed line in the top view.

First, as shown in FIG. 3A, a gray tone blank mask including a transflective film 2, a light shielding film 3, an antireflection film 4, and a resist film 5 is prepared on the transparent substrate 1, and the resist film 5 is prepared. Is subjected to primary exposure and development to form the first resist pattern 5a as shown in FIG. 3B. Then, the antireflection film 4, the light shielding film 3, and the semi-transmissive film 2 are sequentially wet-etched by using the first resist pattern 5a as an etching mask, and the antireflection film pattern 4a, the light shielding film pattern 3a, and the like. The semitransmissive film pattern 2a is formed. In this way, the transparent region 1 has a transparent region 12 exposed, and a light shielding region 10 'in which a semi-transmissive layer pattern 2a, a light shielding layer pattern 3a, and an anti-reflective layer pattern 4a are stacked. Here, the light blocking region 10 ′ includes not only the source pattern 10a and the drain pattern 10b but also the channel portion.

Then, the first resist pattern 5a is removed, a new resist film is applied, and second exposure and development are performed to expose the second resist pattern 6 exposing the channel portion in the light shielding region 10 'as shown in FIG. 3C. Form. The semi-transmissive region 16 by removing the anti-reflection film pattern 4a and the light shielding film pattern 3a of the channel portion exposed under the second resist pattern 6 by wet etching to expose the lower semi-transmissive film pattern 2a. Next, the light blocking region 10 including the source pattern 10a and the drain pattern 10b but not the channel portion is completed. The light blocking region 10 includes a semitransmissive film pattern 2a, a light blocking film pattern 3b, and an antireflection film pattern 4b.

Then, the second resist pattern 6 is removed to obtain a final result as shown in FIG. 3D, that is, a gray tone photomask 22, and the light shielding region 10 and the transflective region 16 of the transparent substrate 1 are obtained. Except for the portion is the transmission region (12).

However, since the antireflection film 4, the light shielding film 3, and the semi-transmissive film 2 are all the same kind of material, the antireflection film pattern of the channel portion exposed under the second resist pattern 6 in the step of referring to FIG. When the wet etching of 4a) and the light shielding film pattern 3a is performed, the semi-transmissive film pattern 2a is also wet etching at the same time, so that the transmittance and the light phase difference are changed, so it is very difficult to control the transmittance and the light phase difference of the semi-transmissive region 16. . In addition, it is very difficult to distinguish and form the light-transmitting region 10 and the transmissive region 12 including the transflective region 16 and the source pattern 10a and the drain pattern 10b which are channel portions.

In order to solve this problem, an etch stopper having different materials is formed between the transflective film 2 and the light shielding film 3 in the blank mask preparation step as shown in FIG. A method of controlling the transmittance and the optical phase difference by protecting the semi-transmissive layer pattern 2a from being etched when the pattern 3a is etched has been proposed, but this results in a complicated process of manufacturing a graytone mask and a decrease in photomask yield. There is this.

In addition, in the photomask fabrication method, after patterning the light shielding region 10 ′ by the primary patterning described with reference to FIG. 3B, when the second patterning described with reference to FIG. 3C occurs, alignment of the channel region pattern occurs. Will be. When the alignment is misaligned in the Y direction compared to the design position G as shown in FIG. 4A, short-circuit occurs between the source and the drain of the TFT, which causes a serious problem in pattern alignment during photomask fabrication. have. And, as shown in FIG. 4B, when the alignment is shifted in the X direction relative to the design position G, a channel pattern error is caused. For this reason, when designing the photomask pattern, the pattern misalignment must be considered in advance, and thus, it becomes difficult to manufacture a high value-added TFT-LCD by miniaturizing the pattern along with the design difficulty.

To solve this problem, as shown in FIG. 5A, the anti-reflection film and the light shielding film of the part including the transmissive region except for the source pattern 10a and the drain pattern 10b and the channel where the channel is to be formed are wetted during the first patterning. Etching forms an anti-reflection film pattern 4b and a light shielding film pattern 3b, and transmits region 12 except for the source pattern 10a, the drain pattern 10b, and the channel pattern during secondary patterning as shown in FIG. 5B. A method of defining the semi-transmissive region 16 in the channel region by dry etching the semi-permeable membrane 2 to form the semi-permeable membrane pattern 2a has been proposed. However, this also causes pattern defects due to damage of the antireflection film pattern 4b and the light shielding film pattern 3b during dry etching of the semi-transmissive film 2 when pattern misalignment occurs in the Y and X directions during secondary patterning. There are many problems.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method for manufacturing a gray tone blank mask capable of providing a gray tone blank mask in which transmittance and optical phase difference are precisely controlled.

Another object of the present invention is to provide a gray tone blank mask with precisely controlled transmittance and optical phase difference.

Another technical problem to be achieved by the present invention is to provide a method of manufacturing a gray tone photomask in which there is no problem of semi-transmissive film pattern misalignment and precisely controlled transmittance and optical retardation.

In the method for manufacturing a gray tone blank mask according to the present invention for achieving the above technical problem, a light shielding film is formed on a transparent substrate, and then, the light shielding film is patterned to form an opening exposing the surface of the transparent substrate. After forming a transflective film on the entire surface of the resultant including the opening, a resist film is formed on the transflective film.

In an exemplary embodiment, the method may further include forming an antireflection film on the light blocking film, wherein the antireflection film is patterned in the same pattern as the light blocking film. The opening is preferably formed at a position corresponding to the channel of the TFT and is formed larger than the channel. Instead, the opening may be formed at a position corresponding to the contact hole pattern of the TFT passivation pattern, and may be larger than the contact hole pattern of the passivation pattern. At least one of the transflective film, the anti-reflection film, and the light shielding film is formed of a material capable of wet etching or a material capable of both wet etching and dry etching.

At least one of the transflective film, the antireflection film, and the light shielding film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn) and any one selected from the group consisting of combinations thereof, and at least one of the transflective film, the antireflection film, and the light shielding film is formed by introducing an inert gas and a reactive gas in a vacuum chamber. It is formed using a reactive sputtering or vacuum deposition method (PVD, CVD, ALD). At this time, the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), At least one selected from the group consisting of ammonia (NH ₃ ), methane (CH ₄ ) and fluorine (F) may be used. The vacuum chamber has a degree of vacuum of 0.3 to 10 mTorr and an applied power of 0.3 to 30 kW, and the mixing ratio of the reactive gas is inert gas: nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ). 0 to 100%: 0 to 95%: 0 to 95%: 0 to 95%. In addition, at least one of oxygen (O ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), and nitrogen dioxide (NO ₂ ) may be used instead of carbon dioxide (CO ₂ ) or nitrogen or carbon dioxide and nitrogen.

At least one of the transflective film, the anti-reflection film, and the light shielding film is formed of a chromium (Cr) compound, and the chromium compound is chromium nitride (CrN), chromium oxide (CrO), chromium carbide (CrC), or chromium carbide (CrCO). ), Chromium nitride (CrCN), chromium oxynitride (CrON), chromium oxynitride (CrCON), chromium fluoride (CrF), chromium fluoride (CrNF), chromium fluoride (CrOF), chromium fluorocarbon (CrCF) , Chromium oxynitride (CrCNF), chromium oxynitride (CrONF), and chromium oxynitride (CrCONF) may be a component including at least one of the transflective film, the antireflection film, and the light shielding film. The component content of is preferably 0 to 95 at% or each of carbon (C), oxygen (O) and nitrogen (N), and the mixed content of chromium (Cr).

The transflective film has a transmittance of 5% to 80% with respect to light having a wavelength of 190 nm to 800 nm, a light phase shift of 0 to 100 degrees, and a thickness of 50 to 4,500 Hz, preferably at least one of the antireflection film and the light shielding film. Either thickness is 100 kPa to 2,500 kPa, and a resist film having a thickness of 1,000 kPa to 20,000 kPa may be used to pattern the light shielding film. The transparent substrate is heat-treated at a temperature of 50 ° C. to 700 ° C. in order to improve the adhesion of at least one of the semi-transmissive film, the anti-reflection film and the light shielding film and the growth of the film, and at least one of the semi-transmissive film, the anti-reflection film and the light shielding film As a method for improving stress relaxation and chemical resistance of the transparent substrate on which a film is formed, the method may further include heat treatment in a range of 100 ° C. to 800 ° C. for a time of 120 minutes or less.

Gray tone blank mask according to the present invention for achieving the above another technical problem, a transparent substrate; A light blocking film pattern formed on the transparent substrate and defining an opening exposing the surface of the transparent substrate; A semi-permeable membrane formed on the entire surface of the resultant including the opening; And a resist film formed on the transflective film. An anti-reflection film pattern may be further included on the light shielding film pattern.

In one aspect of the method for manufacturing a gray tone photomask according to the present invention for achieving the another technical problem, by using at least one of the light shielding film pattern and the semi-transmissive film by using the gray tone blank mask according to the present invention, Forming a self-aligned semi-transmissive region formed by the semi-transmissive layer pattern formed in the opening, a light-shielding region formed by stacking the light-shielding layer pattern and the semi-transmissive layer pattern, and a transmissive region exposing the surface of the transparent substrate. .

For example, a step of exposing and developing a gray tone blank mask according to the present invention with an electron beam or a laser of monochromatic light to form a resist pattern, using the formed resist pattern as an etching mask, or a light shielding pattern or an antireflection film pattern and a light shielding pattern Etching sequentially and removing and cleaning the resist film used to form the resist pattern.

In addition, the step of forming a resist pattern by exposing and developing a gray tone blank mask according to the present invention with an electron beam or a laser of monochromatic light, using a resist pattern as an etching mask, a semi-transmissive film pattern and a light-shielding film pattern or a semi-transmissive film pattern, And sequentially removing the antireflection film pattern and the light shielding film pattern, and removing and cleaning the resist film used in the step of forming the resist pattern.

In another aspect of the method for manufacturing a graytone photomask according to the present invention for achieving the above another technical problem, by using the graytone blankmask according to the manufacturing method of the graytone blankmask according to the present invention, the light shielding film pattern and transflective Patterning at least one of the films.

In another aspect of the method for manufacturing a gray tone photomask according to the present invention for achieving another technical problem, a light shielding film is formed on a transparent substrate, and then the light shielding film is patterned to form an opening exposing the surface of the transparent substrate. After forming a transflective film on the entire surface including the opening, and then patterning the light shielding film pattern and the semi-transmissive film at the same time, consisting of a semi-transmissive film pattern formed in the opening, a self-aligned semi-transmissive area, the light shielding film pattern and the semi-transmissive film A light blocking region formed by stacking patterns and a transparent region on which the surface of the transparent substrate is exposed are formed.

In another aspect of the method for manufacturing a gray tone photomask according to the present invention for achieving another technical problem, a light blocking film is formed on a transparent substrate, and then the opening is exposed to pattern the light blocking film to form an opening. After forming a transflective film on the entire surface of the resultant including the opening, and then patterning the transflective film formed in the opening, the transmissive region exposed surface of the transparent substrate in the opening, the semi-transmissive film pattern formed in the opening An alignment semi-transmissive region and a light shielding region formed by stacking the light-shielding layer pattern and the semi-transmissive layer pattern are formed.

In such gray tone photomask manufacturing methods, the opening is formed at a position corresponding to the channel of the TFT and is formed larger than the channel. When the light shielding film and the semi-transmissive film are patterned, portions of the semi-transmissive film formed in the opening formed outside the position corresponding to the channel are removed. At least one of the semi-transmissive film, the anti-reflection film, and the light shielding film is patterned by selecting one or more of wet etching and dry etching alone or in combination.

In the method for manufacturing a gray tone blank mask and a photo mask according to the present invention, the transparent substrate refers to a transparent substrate for semiconductor and flat panel display composed of glass or quartz. When the semi-permeable film formed by the blank mask and the photomask manufacturing method is formed on a transparent substrate for semiconductor and flat panel display, the continuous film or the low-permeable film and the high-permeable film which are manufactured so that the constituents change toward the film surface are two or more layers. Can be configured to overlap with. The flat panel display may be a TFT-LCD, an organic light emitting diode (OLED), a plasma display panel (PDP), an electroluminescent display (FED), an inorganic electroluminescent display, or the like.

In the method for manufacturing a gray tone blank mask and a photomask according to the present invention, photolithography or electron beam lithography may be used for patterning a semi-transmissive film, a light shielding film, and an anti-reflective film (exposure with a monochromatic laser or an electron beam and development), and a light shielding film Or an optical photoresist as a first resist film applied thereon for patterning a film composed of an antireflective film and a light shielding film, and a second resist film formed thereon after patterning the film to form and semi-transmissive film thereon. THMR-iP3500, THMR-iP3600 (manufacturer; Tokyo Ohka Kogyo), DPR-i7000 (manufacturer; Dongjin Semichem), AZ-1500 (manufacturer; Clariant), GXR (manufacturer; Clariant) and electron beam resist (e-beam resist) ) EBR-9 (manufacturer; Toray), PBS (manufacturer; Chisso), ZEP-7000 (manufacturer; Nippon ZEON), positive chemically amplified resist FEP-171 (manufacturer; Fujifilm), negative The FEN-270 studies amplified resist may be used selected from the alkali soluble resin and PAG (photo acid generator) of the resist composition consisting of, such as (a manufacturer;; Fuji Film), NEB-22 (manufacturer: Sumitomo). Such a resist film is formed by spin coating or capillary coating, and the thickness of the resist film is preferably composed of a film whose thickness can be adjusted to 1,000 m 2 to 20,000 m 3. Further, after applying the resist, a soft bake is performed at a temperature range of approximately 80 ° C. to 250 ° C. using a hot plate to prepare a blank mask according to the present invention.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The embodiments described below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. In the drawings illustrating embodiments of the present invention, like reference numerals in the drawings refer to like elements, and overlapping descriptions will be omitted.

(First embodiment)

FIG. 6 schematically illustrates a thin film deposition in a vacuum chamber of a general sputtering apparatus, and FIGS. 7A to 7F schematically illustrate a method of manufacturing a gray tone blank mask and a photomask according to a first embodiment of the present invention. It is one figure. In each figure, the upper end is sectional drawing, the lower end is a top view, and sectional drawing corresponds to the cross section which cut along the horizontal dashed line in the top view.

Referring to FIG. 6, a thin film is formed on the surface of the transparent substrate 34 by installing a target 32 for depositing a thin film under the vacuum chamber 30 and installing a transparent substrate 34 thereon. Referring to a typical thin film formation process by sputtering, first, the transparent substrate 34 is mounted on the substrate holder 36, the target 32 is mounted on the target holder 38, and then the vacuum chamber is used using the exhaust unit 40. A vacuum is formed in and maintained at 30. Thereafter, a gas is injected into the gas injection part 42 to perform sputtering from the target 32, and then deposit it on the transparent substrate 34.

In the method for manufacturing a gray tone blank mask according to the present invention, a light shielding film and a semi-transmissive film, or a light shielding film, an antireflection film, and a semi-transmissive film are formed. At least one of these films is an inert gas in the vacuum chamber 30 as shown in FIG. 6. And reactive sputtering or vacuum deposition methods (PVD, CVD, ALD) formed by introducing a reactive gas.

At this time, the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ), methane (CH ₄ ), fluorine (F) may be used to select one or more selected, the vacuum degree of the vacuum chamber 30 is 0.3 to 10 mTorr, the applied power is 0.3 to 30 kW Under the conditions, the mixing ratio of the reactive gas is 0 to 100%: 0 to 95%: 0 to 95%: 0 to 95% of inert gas: nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ) You can do At least one of oxygen (O ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), and nitrogen dioxide (NO ₂ ) may be used instead of the carbon dioxide (CO ₂ ) or nitrogen or carbon dioxide and nitrogen.

Next, referring to FIGS. 7A to 7F, a method of manufacturing a gray tone blank mask and a photo mask according to the present embodiment is for manufacturing a gray tone photo mask for TFT-LCD similar to the photo mask of FIG. 2. Drain and channel patterns are formed. Look in detail below.

First, referring to FIG. 7A, a light shielding film 104 is formed on a transparent substrate 102 made of glass or quartz. The transparent substrate 102 refers to a transparent substrate for semiconductor and flat panel display. The light blocking film 104 may be formed of a material capable of wet etching, or a material capable of wet etching and dry etching. For example, Co, Ta, W, Mo, Cr, V, Pd, Ti, Nb, Zn, Hf, Ge, Al, Pt, Mn, Fe, Si, Ni, Cd, Zr, Mg, Li, Se, Cu, Y, S, In, Sn and combinations thereof may be formed of any one or a compound thereof (eg, InSnO). In particular, it is preferable to form a chromium (Cr) compound, and possible Cr compounds include one or more of CrN, CrO, CrC, CrCO, CrCN, CrON, CrCON, CrF, CrNF, CrOF, CrCF, CrCNF, CrONF, and CrCONF It has ingredients to do. The component content is 0 to 95 at%, respectively, or a mixed content of carbon (C), oxygen (O) and nitrogen (N), and the remainder may be made of Cr.

Preferably, the light shielding film 104 targets chromium to form chromium nitride (CrCN) by reactive sputtering using argon, methane, and nitrogen gas. The light shielding film 104 has an argon: methane: nitrogen ratio of 5 to 80 based on a mixing ratio of a reactive gas under a condition in which the vacuum degree of the vacuum chamber (30 in FIG. 6) is 1 to 4 mTorr and the applied power is 2 to 7 kPa. %: 0 to 30%: 1 to 95%, and formed in a state where the thickness is 100 kPa to 2,500 kPa, more preferably 100 kPa to 1,000 kPa. The composition of the light shielding film 104 is 0 to 30 at% of carbon (C), 0 to at 20% of oxygen (O), and 0 to 40 at% of nitrogen (N) in order to shield light of exposure light. It is preferable that it consists of.

In order to improve the adhesion of the light shielding film 104 and the growth of the film, the transparent substrate 102 is heated to a temperature of 50 ° C to 700 ° C, and a method for improving stress relaxation and resistance to chemicals is in the range of 100 ° C to 800 ° C. The heat treatment may further include a step of 120 minutes or less.

Subsequently, a chromium oxynitride carbide (CrCON) film, which is an antireflection film 106, is formed on the light shielding film 104 as shown in FIG. 7A by a reactive sputtering method. Similar to the light blocking film 104, the anti-reflection film 106 may be formed of a material capable of wet etching, or wet etching and dry etching. This kind of material is as mentioned above.

Preferably, the antireflection film 106 has a mixing ratio of reactive gas in a condition of a volume ratio of argon: nitrogen: carbon dioxide 5 to 80%: 20 to 20 mTorr under the condition that the vacuum degree of the vacuum chamber is 1 to 4 mTorr and the applied power is 2 to 7 kW. 95%: It is formed in thickness of 100 kPa-2,500 kPa, More preferably, 100 kPa-500 kPa in the state which made it 0 to 30%. The composition of the film is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and the rest is made of chromium to prevent reflection of exposure light.

In order to improve the adhesion of the anti-reflection film 106 and the growth of the film, the transparent substrate 102 is heated to a temperature of 50 ° C to 700 ° C, and is 100 ° C to 800 ° C as a method for improving stress relaxation and chemical resistance. It may further include the step of heat treatment for a time of 120 minutes or less in the range.

Subsequently, as shown in FIG. 7A, a resist film 108 having a thickness of 1,000 GPa to 20,000 GPa, more preferably 3,000 GPa to 15,000 GPa, is formed on the anti-reflection film 106 by, for example, AZ-1500 by spin coating. . Then soft bake on the hotplate. The soft bake is performed at 200 ° C. for 15 minutes to prepare a primary gray tone blank mask.

Following exposure and development of the resist film 108, a first resist pattern 108a having an opening H1 larger than the channel is formed at a position corresponding to the channel of the TFT as shown in Fig. 7B. 2.38% TMAH (tetramethylammonium hydroxide) solution is used in the development process. The opening H1 is formed in a large enough pattern, preferably a large pattern in the Y direction, to enable self-alignment of the semi-permeable film in the subsequent process. Using the first resist pattern 108a as an etching mask, for example, using a wet etching solution such as a CR-7S solution, the antireflection film 106 and the light shielding film 104 in the opening H1 are sequentially processed for 25 to 100 seconds. Wet etching is performed to form the anti-reflection film pattern 106a and the light shielding film pattern 104a.

The remaining first resist pattern 108a is completely removed by dipping in sulfuric acid solution. The cleaning process may be further performed to remove foreign substances that may remain on the surface of the anti-reflection film pattern 106a. 7C shows such a result. As shown in FIG. 7C, the opening H1 is formed sufficiently large in the channel region to allow self alignment. As a method for the secondary manufacturing process, the first patterned blank mask may be again performed in consideration of foreign material contamination during transportation.

Next, referring to FIG. 7D, a semi-transmissive film 110 is formed on the first patterned blank mask. Like the light blocking film 104 and the antireflection film 106, the semi-transmissive film 110 may be formed of a material capable of wet etching, or wet etching and dry etching. This kind of material is as mentioned above. In addition, when the semi-permeable membrane 110 is formed on the transparent substrate 102, the semi-permeable membrane 110 may be configured such that a continuous membrane or a low-permeable membrane and a high-permeable membrane overlapped with two or more layers are manufactured so that their components change toward the membrane surface.

Preferably, the semi-transmissive film 110 forms a chromium nitride oxide (CrON) film. The semi-permeable membrane 110 has a mixing ratio of reactive gas at a vacuum ratio of 1 to 4 mTorr and an applied power of 2 to 7 kW, based on a volume ratio of 5 to 80% of argon: nitrogen: oxygen. : 1 to 95%: 0 to 30% in a state of forming a thickness of 50 kPa to 4,500 kPa, wherein the role of the semi-transmissive film 110 is formed in consideration of the transmission and optical phase difference. Preferably, the transflective film 110 is selected so that the transmittance is 5% to 80% and the light phase shift is 0 degrees to 100 degrees with respect to light having a wavelength of 190 nm to 800 nm. For this purpose, the composition of the semi-permeable membrane 110 is preferably 0 to 90 at% of nitrogen (N), 0 to 30 at% of oxygen (O), and the remainder is made of chromium (Cr).

In order to improve the adhesion of the semi-permeable membrane 110 and the growth of the film, the transparent substrate 102 is heated to a temperature of 50 ° C. to 700 ° C., and is 100 ° C. to 800 in a method for improving stress relaxation and chemical resistance. It may further comprise the step of heat treatment for a time of 120 minutes or less in the range.

Then, after the AZ-1500 is formed on the semi-transmissive film 110 by spin coating, a second resist film 112 having a thickness of 1,000 m to 20,000 m 2, more preferably 3,000 m to 15,000 m 2 is formed. Soft bake on the hotplate. The soft bake is performed for about 15 minutes at a temperature of 200 ° C. to prepare a secondary blank mask.

Then, by exposure and development to the second resist film 112, a second resist pattern 112a as shown in FIG. 7E is formed. 2.38% TMAH solution is used in the development process. As shown in the top view of FIG. 7E, the second resist pattern 112a covers the light blocking region 200 including the source pattern 200a and the drain pattern 200b and the opening H1 formed in FIG. 7C. .

Then, using the second resist pattern 112a as an etching mask, the antireflection film pattern 106a, the light shielding film pattern 104a, and the semi-transmissive film 110 were sequentially and sequentially 25 seconds using a CR-7S solution. Wet etching for 100 seconds to form the anti-reflection film pattern 106b, the light shielding film pattern 104b, and the semi-transmissive film pattern 110a. When patterning the transflective film 110, the antireflective film pattern 106a, and the light shielding film pattern 104a, a portion formed outside the position corresponding to the channel is removed from the transflective film 110 formed in the opening H1. . That is, the portion where the transflective region and the transflective region corresponding to the channel pattern patterned sufficiently large during the primary patterning are simultaneously wet-etched and removed.

The remaining second resist pattern 112a is completely removed from the sulfuric acid solution by dipping. Thereafter, a cleaning process is further performed to remove foreign substances that may remain on the surface of the semi-permeable membrane pattern 110a. 7F is a diagram illustrating such a result. As shown in FIG. 7F, the light-transmitting region 200 including the source pattern 200a and the drain pattern 200b and the semi-transmissive layer pattern 110a define a channel pattern. A gray tone photomask 222 is formed in which a transmissive region 212 is formed. In this manner, the semi-transmissive region 216 is formed of a semi-transmissive layer pattern 110a formed on the bottom, sidewalls, and light shielding layer patterns 104b of the opening (H1 of FIG. 7C), and is characterized in that the openings are self-aligned. .

As shown in FIG. 7F, the gray tone photomask 222 according to the present invention has an opening (H1 in FIG. 7C) formed on the transparent substrate 102 and the transparent substrate 102 and exposing the surface of the transparent substrate 102. Defining a light shielding film pattern 104b, an antireflection film pattern 106b formed on the light shielding film pattern 104b, and a semi-transmissive film pattern 110a formed on the bottom of the opening H1, the sidewalls, and the light shielding film pattern 104b. In addition, the light-transmitting region 200 formed by stacking the self-aligned semi-transmissive region 216 formed by the semi-transmissive layer pattern 110a formed in the opening H1, the light-shielding layer pattern 104b and the semi-transmissive layer pattern 110a, and The transparent substrate 102 has a transmissive area 212 exposed on its surface.

The gray tone blank mask and the gray tone photomask 222 manufactured by the method of the present embodiment are manufactured by wet etching only, without using a dry etching process, and have a channel by the self-aligning function during the second patterning described with reference to FIG. 7E. There is no pattern alignment problem, and the source pattern 200a and the drain pattern 200b are also formed as designed. In addition, since the semi-transmissive layer 110, which is a channel pattern formed after the primary patterning, is protected by the second resist pattern 112a, the transmittance of the semi-transmissive layer 110 formed after the primary patterning and the transmittance of the completed gray tone photomask. The difference can be controlled to less than 2%. In addition, the optical phase difference of the semi-transmissive layer 110 formed after the primary patterning and the gray phase photomask 222 may be controlled to less than 3 degrees. In addition, as a result of manufacturing the sample according to the present embodiment, the root mean square roughness (nmRMS) of the surface of the light shielding film pattern 104b and the channel pattern semi-transmissive film pattern 110a was 0.6 nm to 1.5 nm, resulting in damage to the surface of the light shielding film and the semi-transmissive film. There was no.

When the transflective film 110 is formed on the primary pattern as illustrated in FIG. 7C, side step coverage may occur, and a general shape of the side step coverage is illustrated in FIG. 8.

In FIG. 8, Ts denotes the thickness of the thinnest point, and Tc denotes the thickness of the protrusion. The side step coverage is preferably 3,000 kPa or less, and as a result of the sample preparation according to the present embodiment, the side step coverage of about 2,000 kPa or less is formed.

At this time, the side step coverage can be calculated by the following equation.

Side Step Coverage = Tc-Ts

In order to improve side step coverage, a vacuum deposition method (PVD, CVD, ALD) may be used as a method of forming the semi-transmissive layer 110.

(2nd Example)

9A to 9E are diagrams for describing a method of manufacturing a gray tone blank mask and a gray tone photo mask according to a second embodiment of the present invention. In each figure, the upper end is sectional drawing, the lower end is a top view, and sectional drawing corresponds to the cross section which cut along the horizontal dashed line in the top view. 9A to 9E, the method for manufacturing the gray tone blank mask and the gray tone photo mask according to the present embodiment forms a TFT passivation pattern, which will be described in detail below.

First, as described with reference to FIG. 7A, a light shielding film 304, an antireflection film 306, and a resist film 308 are sequentially formed on the transparent substrate 302 made of glass or quartz, and then soft baked on a hot plate. Then, a primary blank mask as in FIG. 9A is prepared.

Next, by exposure and development of the resist film 308, as shown in Fig. 9B, a first resist pattern 308a having a large opening H2 in the center is formed. 2.38% TMAH solution is used in the development process. Using the first resist pattern 308a as an etching mask, the antireflection film 306 and the light shielding film 304 are sequentially wet-etched for 25 to 100 seconds using a wet etching solution such as a CR-7S solution, for example, to prevent the antireflection film. The pattern 306a and the light shielding film pattern 304a are formed. The opening H2 is formed at a position corresponding to the contact hole pattern of the TFT passivation pattern and is formed larger than the contact hole pattern of the passivation pattern.

After the remaining first resist pattern 308a is completely removed by a sulfuric acid solution, a cleaning process is performed to remove foreign substances that may remain on the surface of the anti-reflection film pattern 306a. Next, referring to FIG. 9C, a semi-transmissive layer 310 is formed on the first patterned blank mask. Unlike the first embodiment, the semi-transmissive film 310 material is formed of nitric oxide chromium carbide (CrCON) using, for example, nitrogen dioxide instead of oxygen. The semi-permeable membrane 310 has a mixing ratio of argon: nitrogen: carbon dioxide of 5 to 80%: 1 to 95% under the condition that the vacuum chamber has a vacuum degree of 1 to 4 mTorr and an applied power of 2 to 7 kW. : 50 to 4500 두께 in thickness in the state of 0 to 30%, and the role of semi-transmissive layer 310 is formed in consideration of transmission and optical phase difference. The composition of the semi-permeable membrane 310, which is a chromium nitride oxide carbon dioxide (CrCON) film, is 0 to 90 at% of nitrogen (N), 0 to 30 at% of oxygen (O), and 0 to 30 at% of carbon (C). The remainder is preferably made of chromium (Cr).

After the AZ-1500 is formed on the semi-transmissive layer 310 by using a spin coating method, a second resist layer 312 having a thickness of 3,000 Å to 15,000 Å is formed, and then soft bake is performed on a hot plate. The soft bake is performed for about 15 minutes at a temperature of 200 ° C. to prepare a secondary blank mask for TFT-LCD.

Then, by exposing and developing the second resist film 312, a second resist pattern 312a having a small opening H3 is formed in the large opening H2 as shown in FIG. 9D. 2.38% TMAH solution is used in the development process. The semi-transmissive layer pattern 310a is formed by etching the semi-transmissive layer 310 exposed in the small opening H3 using the CR-7S solution using the second resist pattern 312a as an etch mask. During etching, the semi-permeable membrane 310 is wet etched for 3 to 50 seconds using a CR-7S solution.

The remaining second resist pattern 312a is completely removed by a dipping method in sulfuric acid solution, and then a cleaning process is performed to remove foreign substances that may remain on the surface of the semi-permeable membrane pattern 310a. 9E shows such a result.

As shown in FIG. 9E, the semi-transmissive region 416 is formed around the small transmissive region 412 in the gray tone photomask 422 manufactured in this manner, and the periphery of the semi-transmissive region 416 is a light shielding region. 400). The transmissive region 412 exposes the surface of the transparent substrate 302 in the opening H2, and the transflective region 416 is self-aligned by the transflective layer pattern 310a formed in the opening H2. The region 400 is formed by stacking the light shielding film pattern 304a, the antireflection film pattern 306a, and the semi-transmissive film pattern 310a.

The gray tone blank mask and the gray tone photomask 422 manufactured by the method according to the second embodiment of the present invention can be manufactured only by wet etching as in the method of the first embodiment described above. The desired pattern can be formed without the alignment problem in the second patterning described with reference. In addition, the semi-transmissive layer 310 is protected by the second resist pattern 312a when the semi-transmissive layer pattern 310a is formed, and then the transmittance after the semi-transmissive layer 310 is formed and after the gray tone photomask 422 is completed. The change can be controlled to less than 2% and the optical retardation change to less than 3 degrees. In addition, as a result of sample fabrication according to the present embodiment, the root mean square roughness (nmRMS) of the surface of the light shielding film pattern 304a and the channel pattern semitransmissive film pattern 310a is 0.6 nm to 1.5 nm, so that the damage of the surface of the light shielding film and the semitransmissive film is reduced. There was no. In addition, there was no problem because the step coverage at the light shielding film and the semi-permeable film interface was measured to be 2,000 mW or less.

According to the second embodiment of the present invention, when the gray tone blank mask and the photomask manufacturing method according to the present invention are used, wet etching is performed without using dry etching for any patterns using a transflective layer as well as a source, a drain, and a channel pattern. Only a gray tone photomask capable of minimizing the transmittance and the optical retardation of the transflective film can be manufactured.

(Third Embodiment)

10A to 10F are schematic views illustrating a gray tone blank mask and a photomask manufactured according to a third embodiment of the present invention. In each figure, the upper end is sectional drawing, the lower end is a top view, and sectional drawing corresponds to the cross section which cut along the horizontal dashed line in the top view.

10A to 10F, the method for manufacturing the gray tone blank mask and the photo mask according to the present embodiment forms a source pattern, a drain pattern, and a channel pattern, which are compared with the first embodiment of the present invention. In order to minimize and reduce the reflectance at the alignment wavelength of the exposure equipment, the anti-transmissive film formed on the light shielding film without the anti-reflection film is manufactured as the anti-reflection film. Look in detail below.

Referring to FIG. 10A, as described with reference to FIG. 7A, a chromium nitride (CrCN) light shielding film 104 is formed on the transparent substrate 102 made of glass or quartz. After forming the first resist film 108 on the light shielding film 104 by using a spin coating method, the first resist film 108 is formed to have a thickness of 3,000 Å to 15,000 소프트, followed by soft baking on a hot plate to form a primary blank mask. To prepare.

Referring to FIG. 10B, as described with reference to FIG. 7B, in the exposure and development of the resist film 108, the first resist pattern 108a having an opening H1 larger than the channel at a position corresponding to the channel of the TFT. ). The light shielding film pattern 104a is formed by patterning the light shielding film 104 using the first resist pattern 108a as an etching mask. Then, the first resist pattern 108a is removed to obtain a result as shown in FIG. 10C.

Next, with reference to FIG. 10D, as described with reference to FIG. 7D, a semi-transmissive layer 110 is formed on the first patterned blank mask. The semi-transmissive film 110 forms a chromium nitride oxide (CrON) film. Nitrogen (N) is 0 to 90 at%, oxygen (O) is 0 to 30 at% and the remainder is made of chromium, and the semi-permeable film 110 is an antireflection film. It also plays a role. After the AZ-1500 is formed on the semi-transmissive film 110 by using a spin coating method, a resist film 112 having a thickness of 3,000 kPa to 15,000 kPa is formed, and then soft bake is performed on a hot plate. Soft baking is carried out at a temperature of 200 ° C. for about 15 minutes to produce a secondary gray tone blank mask.

Then, by exposure and development to the second resist film 112, a second resist pattern 112a as shown in Fig. 10E is formed. Thereafter, the semi-transmissive layer 110 and the light shielding layer pattern 104a are wet-etched sequentially for 25 to 100 seconds at the same time, using the second resist pattern 112a as an etching mask. The pattern 104b is formed. When patterning the transflective film 110 and the light shielding film pattern 104a, a portion of the transflective film 110 formed in the opening H1 outside the position corresponding to the channel is removed.

Then, the second resist pattern 112a is removed to obtain a result as shown in FIG. 10F. As shown in FIG. 10F, the gray tone photomask 222 ′ includes a light blocking region 200 including a source pattern 200a and a drain pattern 200b, a semi-transmissive layer pattern 110a, and a channel pattern. The transflective region 216 to be defined, and the transmissive region 212 in a shape surrounding the periphery are formed.

The gray tone blank mask and the gray tone photomask 222 'manufactured by the method of the present embodiment are manufactured by wet etching only without using a dry etching process, and there is no alignment problem of the channel pattern by the self-aligning function, and the source pattern ( 200a) and drain pattern 200b are also formed as designed. In addition, since the semi-transmissive layer 110, which is a channel pattern formed after the primary patterning, is protected by the second resist pattern 112a, the transmittance of the semi-transmissive layer 110 formed after the primary patterning and the completed gray tone photomask 222. The transmittance difference of ') can be controlled to less than 2%. In addition, the optical phase difference of the semi-transmissive layer 110 formed after the primary patterning and the gray phase photomask may be controlled to be less than 3 degrees. In addition, as a result of fabricating the sample according to the present embodiment, the root mean square roughness (nmRMS) of the surface of the light shielding film pattern 104b and the channel pattern semi-transmissive film pattern 110a is 0.6 nm to 1.5 nm. There was no. In addition, the semi-transmissive film 110 formed on the light shielding film pattern 104a serves as an anti-reflection film, thereby reducing the gray tone blank mask process and reducing the step coverage to 1,000 mW or less. In addition, the gray tone photomask 222 ′ manufactured by the method of the present exemplary embodiment may include a semi-transmissive layer 110 and a transparent substrate (2) which serve as an anti-reflection layer on the light shielding layer pattern 104a at the alignment wavelength of the exposure equipment during the second patterning. 102) the difference in reflectance with the semi-transmissive layer 110 on the above can be made easier to align during the second patterning.

(Example 4)

11A to 11D are diagrams schematically showing a gray tone blank mask and a photo mask manufactured according to a fourth embodiment of the present invention. In each figure, the upper end is a short side, and the lower end is a top view, and sectional drawing corresponds to the cross section cut along the horizontal dashed line in the upper view.

Referring to FIG. 11A, in the gray tone blank mask according to the present embodiment, a light shielding film 304 is formed on a transparent substrate 302 such as glass or quartz, and then a resist film 308 is formed to form a primary blank mask. To manufacture.

Then, as shown in Figs. 11B to 11D, the process proceeds in almost the same manner as in the second embodiment to produce the secondary blank mask and the gray tone photomask 422 '.

In the gray tone photomask 422 ′, the transmissive region 412 exposes the surface of the transparent substrate 302 in the opening H2, and the transflective region 416 has a semi-transmissive layer pattern 310a formed in the opening H2. The light shielding area 400 is formed by stacking the light shielding film pattern 304a and the semi-transmissive film pattern 310a.

The gray tone blank mask and the gray tone photomask 422 'manufactured by the method of this embodiment are similar to the second patterning of gray tone blank mask and photo mask manufactured by the methods of the first to third embodiments. There is no problem of alignment in time, the change in transmittance is less than 2% and the change in light retardation is controlled to less than 3 degrees. In addition, as in the third embodiment, the anti-reflection film forming process is reduced and the step coverage is reduced to 1,000 mW or less.

As mentioned above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. It is obvious.

According to the method for manufacturing the gray tone blank mask and the photo mask of the present invention, in the second patterning process in the gray tone photo mask process for forming the source, drain, and channel pattern, the size of the transmission region that becomes the channel pattern to enable self-alignment Since the high pattern precision can be obtained by controlling the, there is an advantage that is very suitable for the production of all types of gray tone photomask as well as the gray tone photomask process for forming the source, drain, and channel pattern. That is, the gray tone blank mask and the photo mask according to the present invention have excellent pattern alignment.

In addition, in order to form a transmissive region of the outer region after the second patterning by forming a semi-permeable membrane after the first patterning using the same metal series as the chromium material generally used in the photomask manufacturing process, a semi-permeable membrane, When the anti-reflection film and the light shielding film are sequentially or selectively patterned, the semi-transmissive film, which is not etched, is protected by the resist film, thereby easily controlling the transmittance and the light phase difference regardless of the material and the etching method of the semi-transmissive film. Thus, there is no limitation on the etching method and order, and thus, wet etching may be used, dry etching may be used, and wet etching and dry etching may be mixed as needed. Therefore, the dry etching problems generated when the semi-permeable film is manufactured using materials such as MoSi, W, Si, etc. can be solved, and since the etch stopper film is not required, the gray tone blank mask and the photomask are manufactured through a simple manufacturing process. Can produce.

In addition, the grayton blank mask and the photomask manufacturing method according to the present invention is easily applied to the wet etching process in a large area photomask process, thereby reducing the cost and high value-added through quality completion and process simplicity without the investment of dry etching equipment. It is possible to manufacture gray tone blank masks and photo masks to manufacture products, and can also be applied to the photomask manufacturing process without changing the film material of the blank mask, thereby providing cost and reliability and convenience for the blank mask. Reduction and high value-added products can be manufactured to increase competitiveness.

In addition, the manufacturing method of the gray tone blank mask and the photo mask according to the present invention has the advantage of simplifying the process by forming a semi-transmissive film that simultaneously performs the role of the semi-transmissive film and the anti-reflection film, in which case the alignment of the exposure equipment. By properly adjusting the reflectance of the semi-transmissive film at the wavelength and the reflectance of the anti-reflection film, there is an effect that alignment at the time of secondary patterning becomes easier.

Claims (25)

Forming a light shielding film on the transparent substrate; Patterning the light blocking film to form an opening exposing the surface of the transparent substrate; Forming a transflective film on the entire surface of the resultant including the opening; And And forming a resist film on the transflective film. The method of claim 1, further comprising forming an anti-reflection film on the light shielding film, wherein the anti-reflection film is patterned in the same pattern as the light shielding film. The method of claim 1, wherein the opening is formed at a position corresponding to a channel of the TFT and is larger than the channel. The gray tone blank mask manufacturing method of claim 1, wherein the opening is formed at a position corresponding to a contact hole pattern of a TFT passivation pattern and is formed larger than the contact hole pattern of the passivation pattern. Way. The method of claim 2, wherein at least one of the transflective film, the anti-reflection film, and the light shielding film is formed of a material capable of wet etching or a material capable of both wet etching and dry etching. The method of claim 2, wherein at least one of the transflective film, the anti-reflection film, and the light shielding film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), Palladium (Pd), titanium (Ti), niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), Silicon (Si), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulfur (S), Method for producing a gray tone blank mask, characterized in that formed with any one or a compound thereof selected from the group consisting of indium (In), tin (Sn) and combinations thereof. 3. The gray according to claim 2, wherein at least one of the transflective film, the antireflection film, and the light shielding film is formed using a reactive sputtering or vacuum deposition method in which an inert gas and a reactive gas are introduced into a vacuum chamber. Tone blank mask manufacturing method. The method of claim 7, wherein the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO) ₂ ), a method for producing a gray tone blank mask, characterized in that at least one selected from the group consisting of ammonia (NH ₃ ), methane (CH ₄ ) and fluorine (F). The method of claim 7, wherein the vacuum chamber is 0.3 to 10 mTorr, the applied power is 0.3 to 30 kW, the mixing ratio of the reactive gas is inert gas: nitrogen (N ₂ ): carbon dioxide (CO ₂ ): Methane (CH ₄ ) 0 to 100%: 0 to 95%: 0 to 95%: 0 to 95%, characterized in that the gray tone blank mask manufacturing method. The method of claim 9, wherein at least one of carbon dioxide (CO ₂ ) or nitrogen or carbon dioxide and nitrogen, at least one of oxygen (O ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), and nitrogen dioxide (NO ₂ ). Method for producing a gray tone blank mask, characterized in that used. The method of claim 6, wherein at least one of the transflective film, the antireflection film, and the light shielding film is formed of a chromium (Cr) compound, and the chromium compound is chromium nitride (CrN), chromium oxide (CrO), or chromium carbide (CrC). , Chromium carbide (CrCO), chromium nitride (CrCN), chromium oxynitride (CrON), chromium oxynitride (CrCON), chromium fluoride (CrF), chromium fluoride (CrNF), chromium fluoride (CrOF), Method for producing a gray tone blank mask, characterized in that the chromium carbide (CrCF), chromium nitride chromium (CrCNF), chromium oxynitride (CrONF), and a component containing at least one of chromium oxynitride (CrCONF) . The method of claim 11, wherein the component content of at least one of the transflective film, the antireflection film, and the light shielding film is 0 to 95 at%, respectively, or a mixed content of carbon (C), oxygen (O), and nitrogen (N), The remaining method of manufacturing a gray tone blank mask, characterized in that made of chromium (Cr). The method of claim 1, wherein the transflective film has a transmittance of 5% to 80% for light having a wavelength of 190 nm to 800 nm, a light phase shift of 0 ° to 100 °, and a thickness of 50 Pa to 4,500 Pa. Tone blank mask manufacturing method. The method of claim 2, wherein the thickness of at least one of the anti-reflection film and the light shielding film is 100 kPa to 2,500 kPa, and a resist film having a thickness of 1,000 kPa to 20,000 kPa is used to pattern the light shielding film. . The method of claim 2, wherein the transparent substrate is heat-treated at a temperature of 50 ℃ to 700 ℃ to improve the adhesion of at least one of the transflective film, the anti-reflection film and the light shielding film and the growth of the film, the semi-transmissive film, reflection A method for improving stress relaxation and chemical resistance of the transparent substrate on which at least one of the anti-film and the light-shielding film is formed, the method may further include heat treatment for a time of 120 minutes or less in a range of 100 ° C to 800 ° C. Tone blank mask manufacturing method. Transparent substrate; A light blocking film pattern formed on the transparent substrate and defining an opening exposing the surface of the transparent substrate; A semi-permeable membrane formed on the entire surface of the resultant including the opening; And A gray tone blank mask comprising a resist film formed on the transflective film. The gray tone blank mask of claim 16, further comprising an anti-reflection film pattern on the light shielding film pattern. By patterning at least one of the said light shielding film pattern and a semi-transmissive film using the gray tone blank mask of Claim 16 or 17, Forming a self-aligned semi-transmissive region formed by the semi-transmissive layer pattern formed in the opening, a light-shielding region formed by stacking the light-shielding layer pattern and the semi-transmissive layer pattern, and a transmissive region exposing the surface of the transparent substrate. Tone photomask manufacturing method. 16. Gray comprising patterning at least one of the light shielding film pattern and the semi-transmissive film by using the gray tone blank mask according to the method for manufacturing the gray tone blank mask according to claim 1. Tone photomask manufacturing method. Forming a light shielding film on the transparent substrate; Patterning the light blocking film to form an opening exposing the surface of the transparent substrate; Forming a transflective film on the entire surface of the resultant including the opening; And Patterning the light shielding film pattern and the semi-transmissive film at the same time, the semi-transmissive film pattern formed in the opening is a self-aligned semi-transmissive area, the light shielding area formed by stacking the light shielding film pattern and the semi-transmissive film pattern and the surface of the transparent substrate exposed A gray tone photomask manufacturing method comprising the step of forming a transmission region. Forming a light shielding film on the transparent substrate; Patterning the light blocking film to form an opening exposing the transparent substrate; Forming a transflective film on the entire surface of the resultant including the opening; And The semi-transmissive layer formed in the opening is patterned to form a transmissive region exposing the surface of the transparent substrate in the opening, a semi-permeable membrane pattern formed in the opening, and a self-aligned semi-transmissive region, and the light blocking film pattern and the semi-permeable membrane pattern. A gray tone photomask manufacturing method comprising the step of forming a light-shielding area is laminated. 22. The method of claim 20 or 21, further comprising forming an antireflection film on the light blocking film, wherein the antireflection film is patterned in the same pattern as the light blocking film. 21. The method of claim 20, wherein the opening is formed at a position corresponding to a channel of the TFT and is formed larger than the channel. 24. The method of claim 23, wherein, when patterning the light blocking film and the semi-transmissive film, a portion of the semi-transmissive film formed in the opening is formed outside the position corresponding to the channel. 21. The method of claim 20, wherein the opening is formed at a position corresponding to the contact hole pattern of the TFT passivation pattern and formed larger than the contact hole pattern of the passivation pattern.

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