TWI319017B - Method of manufacturing gray-tone blankmask and photomask - Google Patents

Method of manufacturing gray-tone blankmask and photomask

Info

Publication number
TWI319017B
TWI319017B TW095110664A TW95110664A TWI319017B TW I319017 B TWI319017 B TW I319017B TW 095110664 A TW095110664 A TW 095110664A TW 95110664 A TW95110664 A TW 95110664A TW I319017 B TWI319017 B TW I319017B
Authority
TW
Taiwan
Prior art keywords
blankmask
photomask
tone
manufacturing gray
gray
Prior art date
Application number
TW095110664A
Other languages
Chinese (zh)
Other versions
TW200702459A (en
Inventor
Kee Soo Nam
Han Sun Cha
Shin Ju Yang
Hyoung-Jong Kang
Gi-Hun Ryu
Byoung-Wook Park
Original Assignee
S&S Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S&S Tech Co Ltd filed Critical S&S Tech Co Ltd
Publication of TW200702459A publication Critical patent/TW200702459A/en
Application granted granted Critical
Publication of TWI319017B publication Critical patent/TWI319017B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW095110664A 2005-07-05 2006-03-28 Method of manufacturing gray-tone blankmask and photomask TWI319017B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20050060497 2005-07-05
KR20050092481 2005-09-30
KR20050105232 2005-11-04
KR20050127882 2005-12-22
KR1020060001480A KR100800301B1 (en) 2005-07-05 2006-01-05 Manufacturing method of blankmask and photomask for gray-tone

Publications (2)

Publication Number Publication Date
TW200702459A TW200702459A (en) 2007-01-16
TWI319017B true TWI319017B (en) 2010-01-01

Family

ID=37871103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110664A TWI319017B (en) 2005-07-05 2006-03-28 Method of manufacturing gray-tone blankmask and photomask

Country Status (2)

Country Link
KR (1) KR100800301B1 (en)
TW (1) TWI319017B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI400559B (en) * 2007-01-11 2013-07-01 S&S Tech Co Ltd Process method of gray tone blankmask and photomask
CN101315517A (en) 2007-05-30 2008-12-03 北京京东方光电科技有限公司 Mask plate of image element groove section and thin-film transistor using the same
KR100887172B1 (en) * 2007-06-16 2009-03-10 주식회사 피케이엘 Mask and method of manufacturing the same
KR102089468B1 (en) * 2012-09-04 2020-03-16 엘지디스플레이 주식회사 Thin Film Transistor Substrate Having A Light Absorbing Layer For Shielding Metal Oxide Semiconductor Layer From Light And Method For Manufacturing The Same
KR102168151B1 (en) * 2012-12-27 2020-10-20 알박 세이마쿠 가부시키가이샤 Phase Shift Mask and Method For Producing Same
CN113539797B (en) * 2021-07-12 2023-03-24 武汉新芯集成电路制造有限公司 Semiconductor device and method for manufacturing the same
CN118380352B (en) * 2024-06-24 2024-10-22 上海陛通半导体能源科技股份有限公司 Wafer processing method capable of adjusting wafer warpage in different areas

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100340865B1 (en) * 1999-11-05 2002-06-20 박종섭 Mask for forming contact in semiconductor device and method for manufacturing the same
JP2003173015A (en) * 2001-09-28 2003-06-20 Hoya Corp Method of manufacturing gray tone mask
KR100472115B1 (en) * 2002-07-16 2005-03-10 주식회사 에스앤에스텍 Blank-mask and its method for manufacturing
KR100885316B1 (en) * 2002-10-18 2009-02-25 하이디스 테크놀로지 주식회사 Method for forming ID mark of array substrate in liquid crystal display
JP4345333B2 (en) 2003-03-26 2009-10-14 凸版印刷株式会社 Phase shift mask and pattern transfer method using the same
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4210166B2 (en) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 Gray-tone mask manufacturing method
JP4521694B2 (en) * 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 Gray-tone mask and thin film transistor manufacturing method

Also Published As

Publication number Publication date
TW200702459A (en) 2007-01-16
KR100800301B1 (en) 2008-02-01
KR20070005451A (en) 2007-01-10

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