KR20090047320A - Large size transmittance modulation(tm) blankmask and process method of large size transmittance modulation(tm) photomask - Google Patents

Abstract

The present invention is to form a semi-transmissive portion consisting of an etch stop film and a transmission control film, and a light shielding portion and a light transmitting portion, by manufacturing a transmission control film of the semi-transmissive portion using a dry etching method to reduce the critical dimension (CD: critical dimension) size The present invention relates to a large area transparent control blank mask and a photomask for manufacturing a flat panel display, which has an advantage of making it easier to implement and having a precisely controllable pattern profile of a subject. In addition, an etch stop layer is provided between the quartz substrate and the transmission control layer to prevent damage to the transparent substrate during the dry etching process, thereby increasing the process yield. In addition, the contrast in the transflective part, the transmissive part, and the light shielding part is large, and thus has an advantage of easy pattern inspection.

LCD, large area transmission control blank mask, large area photomask, transmittance, etch stop film

Description

Large Size Transmittance Modulation (TM) Blankmask and Process Method of Large Size Transmittance Modulation (TM) Photomask}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to large area transmission control blank masks and photomasks used in the manufacture of flat panel display (FPD) products such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), plasma display panels (PDPs), and the like.

Today's flat panel display (FPD) products such as liquid crystal display (LCD), organic light emitting diode (OLED), and plasma display panel (PDP) products have high precision and resolution as the market demands are advanced and advanced. There is a need for photomasks and blank masks having However, the conventional gray tone photomask has a disadvantage in that it is not easy to control a pattern of a subject that satisfies a high-definition core dimension (CD) due to the limitation of resolution during exposure. In addition, when the dry etching process is applied in order to increase the core dimension (CD) precision, a high cost substrate is damaged, which has a fatal problem. In addition, the conventional blank mask has a low contrast in the inspection wavelength has a difficulty in the inspection is not easy.

The present invention is to solve the conventional problems as described above by using a dry etching process to form a semi-transmissive portion, a light shielding portion and a transmissive portion consisting of a transmission control film and an etching stopper film having a high precision critical dimension (CD) An object of the present invention is to provide a large-area transmissive control blank mask and a method of manufacturing a transmissive control photomask using the same.

In addition, an object of the present invention is to provide a large-area transmissive control blank mask without damage to the lower substrate during a dry etching process and a method of manufacturing a transmissive control photomask using the same.

In addition, an object of the present invention is to provide a large-area transmission control blank mask and a method of manufacturing a transmission control photomask using the same to solve the conventional problems as described above and made of a material having an easily inspected property.

First, using a large-area transmissive control blank mask having an etch stop film provided between the transmissive control film and the transparent substrate to protect the lower transparent substrate, the transmissive control film is formed by the dry etching process, and the etch stop film and the light shielding film by wet and dry etching. And a method of manufacturing a large-area transmissive control photomask, wherein the anti-reflection film is etched to form a light blocking portion and a light transmitting portion, and then a semi-transmissive portion comprising an etch stop film and a transmission control film.

Second, the method for manufacturing the large-area transmissive control blank mask, characterized in that the semi-transmissive portion of the large-area transmissive control photomask is first formed, and then the light-shielding portion and the transmissive portion are formed.

In the method for manufacturing a large-area transmission control photomask according to the present invention, forming an etch stop film (4) on the transparent substrate (2), forming a transmission control film (6) film on the etch stop film (4) and the A large-area transmissive control blank mask comprising the steps of sequentially forming a light shielding film 8 and an antireflection film 10 on the transmission control film 6 and applying a photoresist film 12 on the antireflection film 10. Prepare. As described above, in the case of the large-area blank mask, an etch stop layer having an excellent selectivity with respect to the quartz substrate 2 is provided between the quartz substrate 2 and the transmission control layer 6, thereby protecting the expensive quartz substrate. In addition, it is possible to use the permeation control film 6 composed of a silicide-based film such as molybdenum silicide (MoSi), which enables easy control of a high precision core dimension (CD) on the etch stop film (4).

Exposing and developing the photoresist film 12 at the position of the light-transmitting region in order to firstly form the light-transmitting part by using the blank mask. The anti-reflection film 10 and the light shielding film are formed by using the pattern of the photoresist 12 as an etching mask. (8) etching, further dry etching the transmission control film 6 using the pattern of the photoresist 12 as an etching mask, sequentially etching the etching blocking film 4, and remaining Removing the photoresist film 12, forming a photoresist film 14 on the etched pattern, exposing and developing a semi-transmissive portion of the photoresist film 14, and forming the pattern. Etching the anti-reflection film 10 and the light shielding film 8 by using the photoresist film 14 as an etching mask, and forming a translucent portion by removing the remaining photoresist film 14. It is desirable to.

One of the etch stop film 4, the transmission control film 6, the light shielding film 8, and the anti-reflection film 10 is tantalum (Ta), cobalt (Co), tungsten (W), molybdenum (Mo), or chromium. (Cr), vanadium (V), palladium (Pd), titanium (Ti), flat titanium (Pt), manganese (Mn), iron (Fe), silicon (Si), nickel (Ni), cadmium (Cd), Zirconium (Zr), Magnesium (Mg), Lithium (Li) Selenium (Se), Copper (Cu), Yttrium (Y), Sulfur (S), Indium (In), Tin (Sn), Hafnium (Hf), Ti Metals such as (titanium), calcium (Ca), gallium (Ga), zinc (Zn), aluminum (Al), arsenic (As), or one or more alloys of these metals as oxygen (O2), Materials using nitrogen (N2), carbon monoxide (CO), carbon dioxide (CO2), nitrogen dioxide (NO2), nitrogen oxides (NO), ammonia (NH3), methane (CH4) and fluorine (F), metals with high melting points Of silicide (Si), for example, molybdenum (Mo), hafnium (Hf), tin (Sn), tungsten (W), tantalum (Ta), Zr (zirconium), and oxygen (O2), Nitrogen (N2), carbon dioxide Examples thereof include materials in which one, two or more reactive gases, such as chlorine (CO2) and nitrogen dioxide (NO2), are used. In addition, the transflective portion may be a film whose phase difference is adjusted to a predetermined value (for example, about 0 ° to 100 °).

More preferably, as the transmission control film 6, any one of MoSiON, MoSiN, MoSiOCN, WSiON, WSiOCN, HfON, HfOCN, HfCO2, HfO2 SnON, SnOCN, ITO, TaSiN, TaSiON, ZrSi, ZrSiN, ZrSiON, ZrSiOCN It is preferable to form the control film 6.

In addition, it is preferable that the light shielding film 8 forms CrN and CrCN, and the antireflection film 10 forms one of CrCON and CrON.

In addition, the etch stop film 4 preferably forms one of CrON, CrOCN, CrCN, CrO, and CrN.

In addition, it is preferable to use at least one of chlorine-based Cl2, CCl4, BCl3, SiCl, BCl, BCl2, and SiCl4 as the dry etching gas of the etch stop film 4, the light shielding film 8, and the antireflection film 10. .

In addition, it is preferable to use at least one of fluorine (F) -based SF6, CF4, CH2F2, NF3 and CHF3 as the dry etching gas of the permeation control membrane 6.

In addition, one or two or more kinds of gases such as HI, BBr, HBr, H 2 O, CH 3 OH, O 2, Ar, H 2, and He may be further included.

In addition, the anti-reflection film 10 and the light shielding film 8 may be selected from one of dry etching and wet etching.

In addition, the selectivity between the light shielding film 8 and the transmission control film 6, the transmission control film 8 and the etch stop film 4, the etch stop film 4 and the transparent substrate 2 satisfies 3 to 100. It is desirable to.

In addition, it is preferable that the transmittance of the semi-transmissive part including the etch stop film 4 and the transmission control film 6 is 5% to 90% and the thickness is 50 mW to 2000 mW at an exposure wavelength of 300 nm to 500 nm.

In addition, it is preferable that the phase difference of the semi-transmissive portion satisfies the range of 0 ° to 100 ° in the wavelength range of 300 nm to 500 nm, which is an exposure wavelength.

In addition, the light shielding film 8 and the anti-reflection film 10 have a thickness of 50 kPa to 2,500 kPa, and a photo film having a thickness of 1,000 kPa to 20,000 kPa in order to pattern the etch stop film 4, the light shielding film 8, and the anti-reflection film 10. It is preferable to form a photo resist film.

In addition, the root mean square roughness (Rq) of the etch stop film (4), the transmission control film (6), the light shielding film (8), and the antireflection film (10) is 0 to 6 [nmRMS], and the center line average roughness (Ra) is 0. It is preferable to form from 5 nm.

In addition, in the case of the target of metal + silicon (Metal + Silicide) required for the production of the permeation control membrane 6, the ratio of metal: silicone is 5 at%: 95 at% to 95at% to 5at% and 5 mol%: 95 mol% It is preferable to satisfy the ratio of 95 mol%-5 mol%.

In addition, after coating the photoresist film, it is preferable to perform a soft bake (Soft Bake) for 0 to 120 minutes at a temperature of 50 ℃ to 250 ℃ using a hot plate (Hot Plate).

In addition, it is preferable to use one of spin coating, capillary coating or scan and spin coating as a method of coating the photoresist film.

In addition, in order to remove the residual photoresist film, it is preferable to use a solution containing sulfuric acid (H 2 SO 4) heated at a temperature of 30 ℃ to 150 ℃ or a solvent capable of dissolving the photoresist film or a developer after ultraviolet exposure.

 Second, a method of manufacturing a large-area transmissive control blank mask, characterized in that the semi-transmissive portion of the large-area transmissive control photomask is first formed and then the light-shielding portion and the transmissive portion are formed.

In the manufacturing method of the large-area transmission control blank mask according to the present invention, in the method of manufacturing the large-area transmission control photomask according to the present invention, the step of forming an etch stop film (4) on the transparent substrate (2), the etching stop film (4) Forming a transmission control film (6) film on the transparent control film (6), and then forming a light shielding film (8) and an antireflection film (10) on the transmission control film (6), the photoresist film (12) on the antireflection film (10) ), A large area blank mask is prepared. Exposing and developing the photoresist layer 12 at a position corresponding to the region of the semi-transmissive portion to form a semi-transmissive portion first by using the large-area blank mask; reflecting the pattern of the photoresist 12 as an etch mask Dry etching the prevention film 10 and the light shielding film 8, removing the remaining photoresist film 12, forming a photoresist film 14 on the etched pattern, the photoresist film ( Exposing and developing the region of the light transmitting portion in step 14), using the photoresist film 14 on which the pattern is formed as an etching mask, an antireflection film 10, a light shielding film 8, a transmission control film 6 and an etch stop film. Etching (4) sequentially, it is preferable to include the step of forming the light transmitting portion and the light shielding portion by removing the remaining photoresist 14 film.

As described above, the large area transmission control blank mask and the photomask of the present invention provide the following effects.

First, by using a dry etching method to form a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion consisting of a transmission control film and an etch stop film, it is possible to easily implement a high resolution critical dimension (CD) size A large area transmission control blank mask and a transmission control photomask have the advantage that the pattern profile of is precisely controllable.

Second, by providing an etch stop layer between the transparent substrate and the transmission control layer, the transparent substrate can be more effectively protected during the dry etching process, and a large area transmission control blank mask and a transmission control photomask which can expect an increase in process yield. It provides a method for producing.

Third, the present invention provides a large-area transmissive control photomask and its raw material-permeable blanking mask which can be expected to improve process productivity by providing a transmissive control film whose reflectance is easy to inspect at an inspection wavelength.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The embodiments described below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below.

(Example 1)

The manufacturing method of the large-area transmission control blank mask and the photomask according to the present embodiment is a diagram schematically illustrating the manufacturing method of the large-area transmission control photomask according to the first embodiment of the present invention as shown in FIGS. 2A to 2H. .

First, as shown in FIG. 2A, an etch stop film 4, a transmission control film 6, a light shielding film 8, and an antireflection film 10 are sequentially formed on a transparent substrate 2 made of glass or quartz. By forming the photoresist film 12 on the anti-reflection film 10, a large area transmission control blank mask is prepared as shown in FIG. 2A.

The etch stop film 4 forms chromium nitride oxide chromium nitride (CrCON) of 90 kV by reactive sputtering using argon, carbon dioxide, and nitrogen as a chromium target. In addition, the permeation control membrane 6 is a metal target of molybdenum silicide (10:90 at%), and the mixing ratio of the reactive gas is argon: nitrogen in a volume ratio of 65 mTorr and 1.5 kW of applied power in the vacuum chamber. %: 35% to form 250 GPa silicide molybdenum (MoSiN). Further, chromium nitride (CrCN) is formed by reactive sputtering using argon, methane and nitrogen, using the light shielding film 8 as a chromium target. CrCN as a light shielding film 10 was formed at 780 kPa with a mixing ratio of argon: nitrogen: methane of 90%: 9%: 1% under the condition that the vacuum chamber had a vacuum degree of 2 mTorr and an applied power of 1.41 kW. . In addition, by using the same sputtering method of CrCON as the antireflection film 10 on the light shielding film 8, the mixing ratio of the reactive gas under the condition that the vacuum degree of the vacuum chamber is 2 mTorr and the applied power is 1.0 kW is a volume ratio of argon: nitrogen: carbon dioxide. A 270 Cr CrCON film was formed into 20%: 77%: 3%.

In addition, after the AZ-1500 is formed on the anti-reflection film 10 by using a scan and spin coating method, a photoresist film 12 having a thickness of 1,0000 Å is formed, and then soft bake is performed on a hot plate. The soft bake was performed at a soft bake temperature of 100 ° C. for about 15 minutes to prepare a large area transmission control blank mask.

First, the first photoresist pattern is formed as shown in FIG. 2B by performing an exposure process on the region of the photoresist film 12 corresponding to the light-transmitting portion and using a 2.38% TMAH solution. The photoresist pattern 12 is used as an etching mask, and the chromium-based antireflection film 10 and the light shielding film 8 are chlorine (Cl 2) and oxygen (O 2) gas, and a molybdenum silicide-based film is a transmission control film. (6) was sulfur hexafluoride (SF6) and oxygen (O2) gas, CrOCN, a chromium-based etch stop film (4), sequentially using chlorine (Cl2) and oxygen (O2) gas. By performing a dry etching process to form a light transmitting portion as shown in Figure 2c. In addition, helium (He) gas was used as a carrier gas. Then, the remaining photoresist film 12 was completely removed by dipping in a sulfuric acid solution heated at 85 ° C.

In order to form a semi-transmissive portion, the photoresist film 14 was formed on the pattern by using a scan and spin coating method to form AZ-1500 as a film having a thickness of 1,0000Å as shown in FIG. Is carried out. In the above, the soft bake was performed at a soft bake temperature of 100 ° C. for about 15 minutes.

The photoresist pattern 14 was formed as shown in FIG. 2F by exposing and developing the region of the photoresist film 14 corresponding to the translucent portion. After the photoresist pattern 14 is used as an etching mask, the chromium-based antireflection film 10 and the light shielding film 8 are sequentially subjected to dry etching using chlorine (Cl2) and oxygen (O2) gas. A semi-transmissive portion was formed as in 2g. The remaining photoresist film 14 is completely removed by dipping in a sulfuric acid solution heated at 85 ° C. Then, a cleaning process is added to remove foreign matter remaining in the pattern. 2H is a diagram illustrating such a result. As shown in FIG. 2H, a large-area transmissive control photomask in which a semi-transmissive portion composed of a transmissive control film 6 and an etch stop film 4, a light-shielding portion and a light-transmitting portion surrounding the periphery is formed.

In order to analyze the membrane component of the transmission control membrane (6) using an Auger Electron Spectroscopy (Auger Electron Spectroscopy) was analyzed and the composition analysis results of the molybdenum nitride (MoSiN) membrane of the transmission control membrane 10 is Mo ) Was 5.2 at%, silicide (Si) was 47.5 at%, and nitrogen (N) was 47.3 at%.

In addition, as a result of fabrication of the sample according to the present embodiment, in order to analyze the surface square mean roughness values of the etch stop film 4, the transmission control film 6, the light shielding film 8, and the anti-reflection film 10, Nanoscope manufactured by Digital Instrument (UK) The centerline average roughness (Ra) and the squared average roughness (Rq) of the surface were measured by the IIIa (AFM) measuring instrument. As a result, the etch stop film 4 has a centerline average roughness (Ra) of 0.4 nm and the squared average roughness. The Rq value is 0.52 nm RMS, the transmission control film 6 has a center line average roughness (Ra) of 0.32 nm, the square average roughness (Rq) value of 0.40 nm RMS, and the light shielding film 8 has a center line average roughness of the center line average roughness. The Ra value is 0.35 nm, the squared average roughness Rq is 0.43 nm RMS, the antireflection film 8 has a centerline average roughness 10, the centerline average roughness Ra is 0.41 nm, and the squared average roughness Rq value. The result of this 0.53nm RMS was obtained, and it is judged that the surface of the film was well formed.

In addition, as a result of surface roughness analysis to determine whether the surface of the quartz substrate is damaged before or after the dry etching, the root mean square roughness (Rq) of the quartz substrate before the dry etching process is 0.35 nm RMS, and the center line average roughness (Ra) value. Is 0.42 nm and the average roughness (Rq) value of the surface of the quartz substrate after the dry etching process is 0.38 nm RMS, and the center line average roughness (Ra) value is 0.47 nm. No damage was confirmed.

In addition, as a result of evaluating the critical dimension (CD) characteristic of the large-area blank mask, the registration value of the mask was 0.651 ?? m for X-Axis and 0.974 ?? for Y-Axis. It has a value of m, 3 Sigma value of CD Uniformity is 0.11 ?? m, MTT (Mean To Target) value is 0.12 ?? m, showing better characteristics of the conventional photomask.

Also, as a result of measuring the transmittance of the transmissive control film composed of the etch stop film and the transmissive control film, the transmittance satisfies 50% in the exposure wavelength and the phase difference satisfies the value of 45 °.

In addition, the large-area transmission control photomask has a large contrast between the light blocking part, the semi-transmissive part, and the light transmitting part when inspecting the pattern at 505 nm, which is the inspection wavelength, compared to the conventional gray tone photomask.

(Example 2)

3A to 3F are schematic views illustrating a method for manufacturing a flat transmission control photomask according to a second embodiment of the present invention.

First, as described with reference to FIG. 2A, an etch stop film 4, a transmission control film 6, a light shielding film 8, and an antireflection film 10 are sequentially formed on a transparent substrate 2 made of glass or quartz. . By forming the photoresist 12 film on the anti-reflection film 10, a large area transmission control blank mask is prepared as shown in FIG. 3A.

First, the photoresist pattern 12 was formed by exposing and developing the region of the photoresist film 12 corresponding to the translucent portion. After the photoresist pattern 12 is used as an etching mask, the chromium-based antireflection film 10 and the light shielding film 8 are sequentially subjected to dry etching using chlorine (Cl2) and oxygen (O2) gas. The translucent portion was formed as in 3b. The remaining photoresist film 12 is completely removed by dipping in a sulfuric acid solution heated at 85 ° C. Then, a cleaning process was added to remove foreign matter remaining in the pattern.

In addition, after the photoresist film 14 is formed on the film on which the pattern is formed to form the light transmitting part and the light blocking part, AZ-1500 is formed as a film having a thickness of 1,0000Å by using a scan and spin coating method as shown in FIG. 3C. Soft bake on the hotplate. The soft bake was performed for about 15 minutes at the soft bake temperature of 100 degreeC in the above.

In addition, in order to form the light transmitting portion and the light blocking portion, the photoresist pattern 14 was formed in the region of the photoresist film 14 corresponding to the light transmitting portion through an exposure and development process as shown in FIG. 3D. Using the photoresist pattern 14 as an etching mask, a dry etching process was sequentially performed using a chromium-based antireflection film 10 and a light shielding film 8 using chlorine (Cl2) and oxygen (O2) gas. Molybdenum silicide-based permeation control membrane (6) is sulfur hexafluoride (Sulfur Hexafluoride (SF6)) and oxygen (O2) gas, and chromium-based etch stop membrane (C4) is CrOCN (Chlorine: Cl2) and oxygen Dry etching process was sequentially performed using the (O 2) gas to form a light transmitting part and a light blocking part as illustrated in FIG. 3E.

Finally, the remaining photoresist film 14 is completely removed by dipping in a sulfuric acid solution heated at 85 ° C. Then, the cleaning process is further performed to remove the foreign matter remaining in the pattern, thereby completing a large area transmission control photomask as shown in FIG. 3F.

As a result of analyzing the surface roughness to determine whether the surface of the large area transmission control photomask is damaged before or after the dry etching on the quartz substrate, the root mean square roughness (Rq) of the quartz substrate before the dry etching process is 0.39 nm RMS. The average roughness (Rq) of the surface of the quartz substrate after the dry etching process is 0.41 nm RMS, and the center line average roughness (Ra) of 0.42 nm, and the center line average roughness (Ra) of 0.52 nm. Therefore, it was confirmed that there is no damage of the quartz substrate in the dry etching process.

In addition, as a result of evaluating the photomask characteristics of the large-area blank mask, the registration value of the mask has a value of 0.653 ?? m for X-Axis and 0.976 ?? m for Y-Axis, and CD. The 3 Sigma value of uniformity is 0.13 ?? m and the MTT (Mean To Target) value is 0.15 ?? m, which shows better characteristics of the conventional photomask.

1 is a schematic cross-sectional view showing a conventional gray tone blank mask according to the present invention.

2A to 2H are cross-sectional views schematically showing a first embodiment of a method for manufacturing a large area transmission control blank mask and a photomask according to the present invention.

3A to 3F are cross-sectional views schematically showing a second embodiment of a method for manufacturing a large-area transmission control blank mask and a photomask according to the present invention.

<Brief description of the main parts of the drawing>

2: transparent substrate 4: etch stop film

6: transmission control film 8: light shielding film

10: antireflection film 12, 14: photoresist film

Claims (20)

In order to manufacture a large-area transmissive control photomask having a light-transmitting portion composed of a transparent substrate, a semi-transmissive portion composed of an etch stop film and a transmission control film, and at least a light-shielding portion composed of a light shielding film and an anti-reflection film, an etch stop film and a transmission control on a transparent substrate are prepared. A large area transmission control blank mask comprising a film, a light shielding film, and an antireflection film, A large-area transmissive control blank mask for protecting a lower transparent substrate by providing an etch stop layer between the transmission control layer and the transparent substrate to protect the lower transparent substrate in an etching process. Using the large area transmission control blank mask according to claim 1, A photoresist pattern formed by exposing and developing the light-transmitting region to first form the light-transmitting portion and the light-shielding portion pattern; Etching the anti-reflection film and the light shielding film using the photoresist pattern as an etching mask; Etching the permeation control membrane by a dry etching process; Etching the etch stop layer by an etching process; Removing the residual photoresist; Forming a photoresist on the entire surface of the resultant patterned product; Exposing and developing the semi-transmissive portion to form the translucent portion; Forming a transflective portion by etching the anti-reflection film and the light shielding film using the photoresist pattern as an etching mask; And a light transmitting part, a light blocking part, and a semi-light transmitting part exposed by sequentially converging the step of removing the remaining photoresist film. The method of claim 1, At least one of the transmission control film, the light shielding film, and the antireflection film is cobalt (Co), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), and niobium (Nb), manganese (Mn), iron (Fe), silicon (Si), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li) selenium (Se), copper ( One or more elements selected from the group consisting of Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), hafnium (Hf), ruthenium (Ru), platinum (Pt), and combinations thereof And a compound consisting of at least one of oxygen (O), nitrogen (N), carbon (C) and fluorine (F). The method of claim 1, wherein the permeation control layer comprises any one of MoSiON, MoSiN, MoSiOCN, WSiON, WSiOCN, HfON, HfOCN, HfCO2, HfO2, SnON, SnOCN, ITO, TaSiN, TaSiON, ZrSi, ZrSiN, ZrSiON, ZrSiOCN A large area transmission control blank mask, characterized in that. The large-area transmissive control blank mask according to claim 1, wherein the etch stop film forms one of CrON, CrOCN, CrCN, CrO, and CrN. The large-area transmissive control blank mask according to claim 1, wherein an etching selectivity is 3 to 100 between the transparent substrate and the etch stop film, the etch stop film and the transmission control film, and the transmission control film and the light shielding film. The method of claim 1, wherein the square average roughness (Rq) value of the film surface of any one of the etch stop film, the transmission control film, the light shielding film and the anti-reflection film is 0.1 to 5 [nm RMS] and the center line average roughness (Ra) is 0.1. A large-area transmissive control blank mask, characterized by satisfying a value ranging from 5 nm to 5 nm. The large-area transmissive control blank mask according to claim 1, wherein the etching stop film, the transmission control film, the light shielding film, or the anti-reflection film has a thickness of 90 kPa to 2,500 kPa. The large-area transmissive control blank mask according to claim 1, wherein a film having a thickness of the photoresist film is formed in a range of 1,000 GPa to 20,000 GPa. The method of claim 1, wherein at least one of the etch stop film, the transmission control film, the light shielding film, and the anti-reflection film is formed by introducing a reactive gas and a reactive gas in a vacuum chamber by using reactive sputtering or vacuum deposition. The reactive gas may be selected from the group consisting of oxygen (O 2), nitrogen (N 2), carbon dioxide (CO 2), nitrogen dioxide (NO 2), nitrogen oxides (NO), nitrogen dioxide (NO 2), ammonia (NH 3), and fluorine (F 2). A large area permeation control blank mask, characterized in that it is produced by selecting at least one species. The method of claim 1, wherein in the case of a target of metal + silicon required for fabricating the transmission control film, the ratio of metal to silicon is 5 at%: 95 at% to 95 at% to 5 at% and 5 mol%: 95 mol. A large-area transmissive control blank mask characterized by satisfying a ratio of% to 95 mol% to 5 mol%. The method of claim 1, A large area transmission control blank mask, wherein the photoresist is manufactured by soft baking at a temperature of 50 degrees to 250 degrees for 0 to 120 minutes. The method of claim 1, The photoresist is coated by a spin coating method, a capillary coating method, or a scan and spin coating method, and a large area transmission control blank mask. Using the large area transmission control blank mask according to claim 1, First forming a photoresist pattern formed by exposing and developing the semi-transmissive portion to form a pattern of the semi-transmissive portion; Etching the anti-reflection film and the light shielding film using the photoresist pattern as an etching mask; Removing the residual photoresist; Forming a photoresist on the entire surface of the resultant patterned product; Exposing and developing the light transmitting area to first form the light transmitting part and the light blocking part; Etching the anti-reflection film and the light shielding film using the photoresist pattern as an etching mask; Dry etching the transmission control layer using the photoresist pattern as an etching mask; Forming a light transmitting part by etching an etch stop layer by using the photoresist pattern as an etching mask; And a light transmitting part, a light blocking part, and a semi-light transmitting part exposed by sequentially converging the step of removing the remaining photoresist film. 15. The method of claim 2 or 14, wherein the gas used to dry etch the etch stop film, the light shielding film, and the anti-reflective film during the dry etching process includes chlorine-based Cl2, CCl4, BCl3, SiCl, BCl, BCl2, SiCl4 and a permeation control film. For dry etching, one or two or more dry etching gases of fluorine (F) series SF6, CF4, CH2F2, NF3, CHF3 and HI, BBr, HBr, H2O, CH3OH, O2, Ar, H2, He are used. A method of manufacturing a large area transmission control photomask, characterized in that. The method for manufacturing a large-area transmission control photomask according to claim 2 or 14, wherein a film having a thickness of the photoresist film is in the range of 1,000 GPa to 20,000 GPa.        15. The method of claim 2 or 14, wherein the transmission control film comprises a dry etching, an etching blocking film, a light shielding film, and an antireflection film by a wet etching process and a dry etching process. The method according to any one of claims 2 to 14, The photoresist is produced by soft baking (Soft Bake) for 0 to 120 minutes at a temperature of 50 to 250 degrees. The method according to any one of claims 2 to 14, The photoresist is coated by a spin coating method, a capillary coating method or a scan and spin coating method (Spin And Spin Coating) method of manufacturing a large area transmission control photomask . The method according to claim 2 or 14, Large-area permeation control characterized in that the residual photoresist is removed using a solution containing sulfuric acid (H 2 SO 4) heated at 30 ° C. to 150 ° C. or by using a soluble solvent or a developer after UV exposure. Method for producing a photomask.

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