KR20060127599A - Apparatus for treating substrate - Google Patents

Abstract

A substrate processor is provided to support a substrate and exhaust process gas using a simple structure. A process chamber(10) defines a reaction space(11). A discharge port(12) is formed at a lower portion of the process chamber. A substrate support member includes a positioning portion(31) and a support shaft(32). The positioning portion is positioned inside the process space. The support shaft the discharge port. A housing(40) encloses the support shaft exposed to an outside of the process chamber. A vertical driver drives the support shaft up and down. A rotation driver rotates the support shaft.

Description

Substrate Processing Equipment {APPARATUS FOR TREATING SUBSTRATE}

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention,

2 and 3 are a perspective view of the main portion of the substrate processing apparatus according to an embodiment of the present invention,

4 is a diagram illustrating a substrate processing using a substrate processing apparatus according to an embodiment of the present invention.

Explanation of Signs of Major Parts of Drawings

10: reaction chamber 11: reaction space

12 exhaust port 21 chamber lid

22: shower head 30: substrate support

31: seating portion 32: support shaft

40 housing 41 body

42: upper coupling portion 43: lower coupling portion

44: cover 45: exhaust hole

50: drive unit 51: support shaft coupling portion

53, 56: motor 57: rotational force transmission shaft

58: rotating belt 60: exhaust pipe

70: substrate

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a support shaft of a substrate support penetrates an exhaust port.

A substrate of a semiconductor wafer or various display devices (hereinafter referred to as a substrate) can be manufactured by repeatedly performing a substrate processing process such as forming a thin film on a substrate and partially etching the thin film. Among them, a process of forming a thin film is mostly performed by chemical vapor deposition (CVD).

The chemical vapor deposition apparatus includes a reaction chamber forming a reaction space, a substrate support positioned in the reaction chamber to support a substrate, a chamber lid for supplying a process gas, and a shower head. The exhaust chamber is formed in the reaction chamber to discharge process gas and by-products.

In the conventional chemical vapor deposition apparatus, the exhaust port and the substrate support are arranged in two ways.

The first is to place the substrate support through the center of the bottom of the reaction chamber and the exhaust port on the side wall of the reaction chamber. In some cases, the exhaust port may be symmetrically disposed on the bottom surface of the reaction chamber center axis. In this structure, an exhaust channel component is required to uniformly discharge the process gas.

Second, the exhaust port is centered on the bottom of the reaction chamber, and the substrate support is supported in the form of cantilever on the side wall of the reaction chamber, or the substrate support is formed in the form of three or more supporting columns. In this structure, there is no interference between the exhaust port and the substrate support, thereby uniformly discharging the process gas.

However, the first method has a problem that the device is complicated by the separate exhaust channel configuration, and the second method has a problem that the structure of the substrate support is complicated.

On the other hand, in both of the above method, since the work from the reaction chamber lower side or the reaction chamber side wall during the separation / assembly operation of the substrate support there is also a problem that reduces the work efficiency of the operator.

An object of the present invention is to provide a substrate processing apparatus capable of performing substrate support and process gas exhaust with a simple configuration.

The above object is a substrate processing apparatus comprising: a reaction chamber forming a reaction space and an exhaust port formed on a lower surface thereof; It can be achieved by including a substrate support having a seating portion located in the reaction space and a support shaft passing through the exhaust port.

A portion of the support shaft is exposed to the outside of the reaction chamber, it is preferable to further include a housing having a cover that can open and close surrounding the support shaft exposed to the outside of the reaction chamber.

It is preferable to further include a vertical drive unit for moving the support shaft up and down.

It is preferable to further include a rotation drive unit for rotating the support shaft.

The housing is preferably through the exhaust port and is connected to at least one exhaust pipe.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

The substrate processing apparatus 1 forms a reaction space 11 and includes a reaction chamber 10 having an exhaust port 12 formed at a lower portion thereof, a chamber lead 21 and a shower head 22 disposed above the reaction chamber 10. ), A substrate support 30 including a seat 31 located in the reaction space 11, a housing 40 located under the reaction chamber 10, and a substrate support 30 positioned below the housing 40. It includes a drive unit 50 for driving.

The reaction chamber 10 forms a reaction space 11 in which substrate processing is performed, and maintains the reaction space 11 at a vacuum and a constant temperature. An approximately circular exhaust port 12 is formed in the lower surface. The exhaust port 12 is located almost at the center of the lower surface of the reaction chamber 10. Although not shown, the reaction chamber 10 may further include a temperature sensor and a pressure sensor.

The chamber lead 21 is a pedestal for supporting the upper structure of the reaction chamber 10, and isolates the inside of the reaction chamber 10 from the external environment. The shower head 22 distributes the process gas into the reaction chamber 10. The process gas is evenly sprayed onto the substrate surface through the shower head 22. A plurality of gas passage holes are formed in the shower head 22, and the process gas is injected through the gas passage holes.

The substrate support 30 includes a plate-shaped seating portion 31 located in the reaction space 11 and a support shaft 32 connected to the seating portion 31. On the seating portion 31, a substrate to be processed is seated. Although not shown, the seating unit 31 may be provided with a heating device and a temperature sensor for heating the substrate.

The support shaft 32 penetrates the exhaust port 12. One end of the support shaft 32 is coupled to the lower surface of the seating portion 31 and the other end is coupled to the driving unit 50. In addition, a part of the support shaft 32 exposed to the outside of the reaction chamber 10 is accommodated in the housing 40.

The housing 40 will be described in detail with reference to FIG.

The housing 40 includes a hexahedral box-shaped body 41 and an upper coupling portion 42 and a lower coupling portion 43 provided at both ends of the body. The support shaft 32 passes through the main body 41 to form an exhaust passage.

The upper coupling portion 42 is coupled to the lower portion of the reaction chamber 10, and the lower coupling portion 43 is coupled to the driving portion 50. The housing 40 is a device for isolating the support shaft 32 from the external environment, and maintains the same vacuum and temperature as the reaction chamber 10. Therefore, the combination of the reaction chamber 10 and the driving unit 50 should be able to maintain a vacuum state. Coupling of the housing 40 with the reaction chamber 10 and the drive unit 50 may be made using a bolt and a nut with an O-ring interposed therebetween.

The cover 44 which can be opened and closed is provided on the side surface of the main body 41. Since the housing 40 must maintain the same vacuum as the reaction chamber 10, the cover 44 must be coupled to enable vacuum maintenance when closed. Opening the cover 44 visually confirms the substrate support 30 from the reaction chamber 10 on the side of the housing 40 and disassembles / assembles and exchanges parts. An exhaust hole 45 is formed in the cover 44, and the exhaust hole 45 is connected to the exhaust pipe 60 to discharge the process gas to the outside. Although not shown, the exhaust pipe 60 is connected to the exhaust pump. Unlike the embodiment, the exhaust hole 45 may be provided in plural, and in this case, the exhaust hole 45 is preferably provided symmetrically about the support shaft 32. On the other hand, since the housing 40 is symmetrically formed, by adjusting the direction of attachment to the reaction chamber 10, the arrangement direction of the exhaust pipe 60 can be easily adjusted.

The driving unit 50 will be described with reference to FIG. 3 as follows.

The driver 50 rotates the support shaft coupling part 51 for connecting and fixing the support shaft 32 of the substrate support 30, the vertical drive unit for driving the support shaft 32 up and down, and the support shaft 32. It includes a rotation drive.

The support shaft coupling part 51 is accommodated in the housing 40 and accommodates and couples the support shaft 32.

The vertical driving part moves the support shaft coupling part 51 up and down and includes a motor 53. The vertical drive unit may move the support shaft coupling unit 51 by using hydraulic pressure.

The rotation drive unit rotates the support shaft coupling unit 51, and includes a motor 56, a rotation force transmission shaft 57, and a rotation belt 58.

A substrate processing using the substrate processing apparatus according to the embodiment of the present invention will be described with reference to FIG. 4.

First, the substrate 70 is seated on the seating part 31. The substrate 70 may be a semiconductor wafer or a substrate for a display device. The display device includes a liquid crystal display device, a plasma display device, an organic light emitting display device, and the like. The support shaft 32 of the substrate support 30 passes through the exhaust port 12 and is fixed to the support shaft coupling portion 51 of the drive unit 50.

Thereafter, the vertical driving unit is operated to move the substrate support 30 to a position where the process proceeds.

When the substrate support 30 is located at the process progress height, the process gas is uniformly sprayed on the surface of the substrate 70 through the shower head 22. The process gas may be, for example, silicon precursor and nitrogen or ammonia when depositing silicon nitride, and silicon precursor and oxygen when depositing silicon oxide. Optionally, a process gas may be applied while the heating unit of the substrate support 30 is operated to raise the substrate to a constant temperature. The rotation driver rotates the substrate support 30 while the process gas is sprayed on the surface of the substrate 70 so that the process gas can be more evenly distributed on the surface of the substrate 70.

Process gas, unreacted process gas, reaction by-products, etc. which processed the substrate 70 are discharged to the outside through the exhaust port (12). Since the exhaust port 12 is located at the center of the reaction chamber 10 and the substrate support 30 does not affect the flow, process gas and the like may be discharged to form a uniform flow. Process gas and the like passing through the exhaust port 12 is discharged to the outside via the exhaust pipe 60 connected to the housing 40.

In the above embodiment, a chemical vapor deposition apparatus is used as the substrate processing apparatus, but the present invention is not limited thereto. The present invention is applicable, for example, to plasma enhanced chemical vapor deposition (PECVD) apparatus. In this case, the substrate processing apparatus further includes an electrode and a power supply device for plasma formation.

Although embodiments of the present invention have been shown and described, it will be apparent to those skilled in the art that the present embodiments may be modified without departing from the spirit or principles of the present invention. It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

As described above, according to the present invention, it is possible to provide a substrate processing apparatus capable of performing substrate support and process gas exhaust with a simple configuration.

Claims (5)

In the substrate processing apparatus, A reaction chamber forming a reaction space and having an exhaust port formed at a lower surface thereof; And a substrate support having a seating portion located in the reaction space and a support shaft passing through the exhaust port. The method of claim 1, A portion of the support shaft is exposed to the outside of the reaction chamber, And a housing surrounding the support shaft exposed to the outside of the chamber and having a cover that can be opened and closed. The method of claim 1, And a vertical driving unit configured to move the support shaft up and down. The method of claim 1, And a rotation driving unit for rotating the support shaft. The method of claim 4, wherein And the housing is in communication with the exhaust port and is connected to at least one exhaust pipe.

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