KR20060111193A - Multi chamber equipment for manufacturing semiconductor - Google Patents

Multi chamber equipment for manufacturing semiconductor Download PDF

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Publication number
KR20060111193A
KR20060111193A KR1020050033646A KR20050033646A KR20060111193A KR 20060111193 A KR20060111193 A KR 20060111193A KR 1020050033646 A KR1020050033646 A KR 1020050033646A KR 20050033646 A KR20050033646 A KR 20050033646A KR 20060111193 A KR20060111193 A KR 20060111193A
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South Korea
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chamber
wafer
chambers
semiconductor manufacturing
pure water
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KR1020050033646A
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Korean (ko)
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원청홍
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삼성전자주식회사
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Priority to KR1020050033646A priority Critical patent/KR20060111193A/en
Publication of KR20060111193A publication Critical patent/KR20060111193A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Multi chamber equipment for manufacturing a semiconductor is provided to prevent contamination of a process chamber due to remaining process gas by using an additional cleaning chamber. A multi chamber is comprised of a transfer chamber(100), loadlock chambers(210,220), process chambers(310,320,330), auxiliary chambers(410,420) and a cleaning chamber(500). A robot arm(150) is installed on the transfer chamber for transmitting a wafer(550) from the loadlock chamber to the process chambers and the auxiliary chambers and the cleaning chamber. A nozzle(510) for spraying pure water and a chuck(530) for rotating the wafer is installed on the cleaning chamber. Process gas remaining on the wafer is removed by spraying the pure water through the nozzle.

Description

다중 챔버 반도체 제조 장비{Multi chamber equipment for manufacturing semiconductor }Multi chamber equipment for manufacturing semiconductor

도1은 로드락 챔버 및 공정 챔버를 포함하는 종래의 다중 챔버 반도체 제조 장비를 보여주는 평면도.1 is a plan view showing a conventional multi-chamber semiconductor manufacturing equipment including a load lock chamber and a process chamber.

도2는 로드락 챔버 및 공정 챔버를 포함하는 본 발명의 실시예에 따른 다중 챔버 반도체 제조 장비를 보여주는 평면도.2 is a plan view showing a multi-chamber semiconductor manufacturing equipment according to an embodiment of the present invention including a load lock chamber and a process chamber.

*도면의 주요부분에 대한 부호의 설명** Explanation of symbols for main parts of drawings *

10, 100 : 이송 챔버10, 100: transfer chamber

21, 22, 210, 220 : 로드락 챔버21, 22, 210, 220: load lock chamber

31, 32, 33, 34, 310, 320, 330 : 공정 챔버31, 32, 33, 34, 310, 320, 330: process chamber

41, 42, 410, 420 : 보조 챔버41, 42, 410, 420: auxiliary chamber

500 : 세정 챔버 510 : 노즐500: cleaning chamber 510: nozzle

530 : 척 550 : 웨이퍼530: Chuck 550: Wafer

본 발명은 다중 챔버 반도체 제조 장비에 관한 것으로, 보다 상세하게는 로드락 챔버 및 복수개의 공정 챔버를 포함하는 다중 챔버 반도체 제조 장비에 관한 것이다.The present invention relates to multi-chamber semiconductor manufacturing equipment, and more particularly to a multi-chamber semiconductor manufacturing equipment comprising a load lock chamber and a plurality of process chambers.

일반적으로 반도체 소자를 생산하는 공정은 노광, 식각, 확산, 증착 등의 공정을 선택적으로 수행하는 일련의 과정에 의해서 이루어지고, 이를 생산하기 위한 반도체 제조 장비들은 공정의 정밀도와 청정도를 향상시키기 위하여 엄격한 조건하에서 사용되고 있다. 특히 식각 또는 증착 공정을 실시하는 반도체 제조 장비의 성능도 중요하지만 공정의 정밀도와 청정도를 유지하기 위하여, 공정을 실시하는 공정 챔버의 환경을 일정한 조건으로 조절하여야 한다. 이러한 목적으로 상기 반도체 제조 장비는 공정 챔버를 고진공으로 유지하고, 오염을 방지하여야 한다. 따라서 공정 챔버의 분위기를 공정에 적합한 조건으로 계속 유지하고, 장비의 가동 효율을 높이기 위하여 웨이퍼 로딩부에 로드락(load lock) 챔버를 사용하고, 여러 종류의 공정을 효율적으로 진행하기 위하여 복수개의 공정 챔버를 사용하는 다중 챔버 방식을 적용하는 실정이다.In general, the process of producing a semiconductor device is made by a series of processes that selectively perform the process of exposure, etching, diffusion, deposition, etc., the semiconductor manufacturing equipment for producing this is strict to improve the precision and cleanliness of the process It is used under conditions. In particular, the performance of the semiconductor manufacturing equipment performing the etching or deposition process is important, but in order to maintain the precision and cleanliness of the process, the environment of the process chamber in which the process is performed should be controlled to a certain condition. For this purpose, the semiconductor manufacturing equipment must maintain the process chamber in high vacuum and prevent contamination. Therefore, in order to maintain the atmosphere of the process chamber in a suitable condition for the process, to use the load lock chamber in the wafer loading section to increase the operating efficiency of the equipment, to process a plurality of processes efficiently The situation is to apply a multi-chamber method using a chamber.

도1은 로드락 챔버 및 공정 챔버를 포함하는 종래의 다중 챔버 반도체 제조 장비를 보여주는 평면도이다. 1 is a plan view showing a conventional multi-chamber semiconductor manufacturing equipment including a load lock chamber and a process chamber.

도1을 참조하여 설명하면, 종래의 다중 챔버 반도체 제조 장비는 중앙에 하나의 밀폐된 공간을 밀폐된 공간을 구비하는 이송 챔버(10)가 있고, 상기 이송 챔버(10)를 중심으로 상기 이송 챔버(10)에 인접하여 로드락 챔버(21, 22), 복수의 공정 챔버(31, 32, 33, 34) 및 보조 챔버(41, 42)가 형성되어 있다. Referring to Figure 1, the conventional multi-chamber semiconductor manufacturing equipment has a transfer chamber 10 having a closed space in a closed space in the center, the transfer chamber around the transfer chamber 10 Adjacent to 10 are load lock chambers 21, 22, a plurality of process chambers 31, 32, 33, 34 and auxiliary chambers 41, 42.

상기 이송 챔버(10)는 상기 로드락 챔버(21, 22), 상기 공정 챔버(31, 32, 33, 34) 및 상기 보조 챔버(41, 42) 사이에 웨이퍼(도면에 표시하지 않음)를 이송시키기 위한 로봇암(15)이 장착되어 상기 로봇암(15)으로 상기 웨이퍼를 이송 시킨다. 상기 공정 챔버(31, 32, 33, 34)는 각각으로 하나의 밀폐된 공간을 점유하며, 상기 공정 챔버(31, 32, 33, 34)에 상기 웨이퍼를 수납하여 반도체 소자를 생산하기 위한 공정을 실시한다. The transfer chamber 10 transfers a wafer (not shown) between the load lock chambers 21 and 22, the process chambers 31, 32, 33, and 34, and the auxiliary chambers 41 and 42. The robot arm 15 is mounted to transfer the wafer to the robot arm 15. Each of the process chambers 31, 32, 33, and 34 occupies one closed space, and accommodates the wafer in the process chambers 31, 32, 33, and 34 to produce a semiconductor device. Conduct.

그리고 상기 로드락 챔버(21, 22)는 상기 이송 챔버(10)와 상기 공정 챔버(31, 32, 33, 34)를 외부의 환경으로부터 보호하며 상기 다중 챔버 반도체 제조 장비의 생산성을 높이기 위하여 로딩(loading)부와 언로딩(unloading)부로 사용된다. 상기 보조 챔버(41, 42)는 공정의 정밀도를 높이기 위하여 필요에 따라 상기 웨이퍼의 방향을 일정하게 정렬하는 플랫존 정렬 장치를 장착하여 사용하기도 한다. The load lock chambers 21 and 22 may be configured to protect the transfer chamber 10 and the process chambers 31, 32, 33, and 34 from an external environment and to increase productivity of the multi-chamber semiconductor manufacturing equipment. It is used as a loading part and an unloading part. The auxiliary chambers 41 and 42 may be equipped with a flat zone alignment device that constantly aligns the direction of the wafer as necessary to increase the accuracy of the process.

종래의 다중 챔버 반도체 제조 장비를 이용하여 상기 공정 챔버(31, 32, 33, 34)에서 상기 웨이퍼를 식각하는 경우 식각 공정의 종류에 따라 상기 식각 공정이 끝난 상기 웨이퍼의 표면에 상기 식각 공정에서 사용한 공정가스의 성분이 남아 있게 된다. 이러한 상태에서 상기 웨이퍼를 상기 공정 챔버(31, 32, 33, 34) 또는 상기 로드락 챔버(21, 22) 등으로 이송하는 경우 상기 웨이퍼에 남아 있는 공정가스가 휘발되면서 상기 공정 챔버(31, 32, 33, 34), 상기 로드락 챔버(21, 22) 및 주변 환경을 오염시켰다. 그런데 일반적으로 상기 식각 공정에 사용하는 공정가스는 독성 및 부식성이 강하여 상기 다중 챔버 반도체 제조 장비에서 계속 사용하는 경 우 이러한 현상이 누적되어 상기 다중 챔버 반도체 제조 장비를 부식시키게 됐다. 또한 이로 인하여 상기 공정 챔버(31, 32, 33, 34) 또는 상기 로드락 챔버(21, 22)의 환경이 변하여 공정의 정밀도가 떨어지고, 후속 웨이퍼를 오염시키는 문제가 발생하였다.When the wafer is etched in the process chambers 31, 32, 33, and 34 using a conventional multi-chamber semiconductor manufacturing equipment, the wafer is used in the etching process on the surface of the wafer where the etching process is completed according to the type of etching process The components of the process gas remain. In this state, when the wafer is transferred to the process chambers 31, 32, 33, 34, or the load lock chambers 21, 22, the process gas remaining in the wafer is volatilized and the process chambers 31, 32. , 33, 34, the load lock chambers 21, 22 and the surrounding environment. However, in general, the process gas used in the etching process is highly toxic and corrosive, so that the phenomenon may accumulate when the continuous process is used in the multi-chamber semiconductor manufacturing equipment to corrode the multi-chamber semiconductor manufacturing equipment. In addition, due to this, the environment of the process chambers 31, 32, 33, and 34 or the load lock chambers 21 and 22 may be changed to reduce the precision of the process and contaminate subsequent wafers.

따라서 본 발명은 상기의 문제점을 해결하기 위하여 이루어진 것으로, 본 발명의 목적은 식각 공정에서 사용하는 공정가스가 웨이퍼에 잔류하여 남았다가 공정 챔버와 주변 환경을 오염시키는 것을 방지하기 위하여 상기 웨이퍼 상에 남은 잔류 공정가스를 제거할 수 있는 다중 챔버 반도체 제조 장비를 제공하는데 있다.Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to remain on the wafer to prevent the process gas used in the etching process remains on the wafer and contaminates the process chamber and the surrounding environment. It is to provide a multi-chamber semiconductor manufacturing equipment that can remove the residual process gas.

상기의 목적을 달성하기 위한 본 발명의 실시예에 따른 다중 챔버 반도체 제조 장비는 로드락 챔버 및 복수개의 공정 챔버를 포함하는 반도체 제조 장비에 있어서, 순수를 분사하는 노즐 및 웨이퍼를 고정하여 회전시키는 척을 포함하는 세정 챔버를 구비하는 것을 특징으로 한다.Multi-chamber semiconductor manufacturing equipment according to an embodiment of the present invention for achieving the above object in the semiconductor manufacturing equipment comprising a load lock chamber and a plurality of process chambers, the chuck to rotate the nozzle and wafer for spraying pure water It characterized in that it comprises a cleaning chamber comprising a.

바람직한 실시예에 있어서, 상기 노즐은 상기 척에 고정된 상기 웨이퍼 위를 가로 질러 이동하면서 순수를 분사한다.In a preferred embodiment, the nozzles spray pure water while moving across the wafer secured to the chuck.

이하 첨부한 도면을 참조하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2는 로드락 챔버 및 공정 챔버를 포함하는 본 발명의 실시예에 따른 다중 챔버 반도체 제조 장비를 보여주는 평면도이다.2 is a plan view showing a multi-chamber semiconductor manufacturing equipment according to an embodiment of the present invention including a load lock chamber and a process chamber.

도2를 참조하여 설명하면, 본 발명의 다중 챔버 반도체 제조 장비는 중앙에 하나의 밀폐된 공간을 밀폐된 공간을 구비하는 이송 챔버(100)가 있고, 상기 이송 챔버(100)를 중심으로 상기 이송 챔버(100)에 인접하여 로드락 챔버(210, 220), 복수의 공정 챔버(310, 320, 330), 보조 챔버(410, 420) 및 세정 챔버(500)가 형성되어 있다. 상기 이송 챔버(100)는 상기 로드락 챔버(210, 220), 상기 공정 챔버(310, 320, 330), 상기 보조 챔버(410, 420) 및 상기 세정 챔버(500) 사이에 웨이퍼(도면에 표시하지 않음)를 이송시키기 위한 로봇암(150)이 장착되어 상기 로봇암(150)으로 상기 웨이퍼를 상기 로드락 챔버(210, 220)에서 상기 공정 챔버(310, 320, 330), 상기 보조 챔버(410, 420) 및 상기 세정 챔버(500)로 이송 시킨다. Referring to Figure 2, the multi-chamber semiconductor manufacturing equipment of the present invention has a transfer chamber 100 having a closed space in a closed space in the center, the transfer centering around the transfer chamber 100 The load lock chambers 210 and 220, the plurality of process chambers 310, 320, and 330, the auxiliary chambers 410 and 420, and the cleaning chamber 500 are formed adjacent to the chamber 100. The transfer chamber 100 is a wafer (shown in the drawing) between the load lock chambers 210 and 220, the process chambers 310, 320 and 330, the auxiliary chambers 410 and 420 and the cleaning chamber 500. Robot arm 150 to transfer the wafer to the robot arm 150 from the load lock chambers 210 and 220 to the process chambers 310, 320, 330, and the auxiliary chamber. 410 and 420 and the cleaning chamber 500 is transferred.

상기 공정 챔버(310, 320, 330)는 각각으로 하나의 밀폐된 공간을 점유하며, 상기 공정 챔버(310, 320, 330)에 상기 웨이퍼를 수납하여 반도체 소자를 생산하기 위한 공정을 실시한다. 예를 들어, 상기 웨이퍼 상에 형성된 포토레지스트 패턴을 이용하여 식각하는 공정 및 식각 후 상기 웨이퍼 상의 상기 포토레지스트 패턴을 제거하는 공정, 상기 웨이퍼를 식각하는 물질의 종류에 따라서 상기 공정 챔버(310, 320, 330)를 나누어 사용할 수 있다. 상기 세정챔버(500)는 순수를 분사하는 노즐(510) 및 웨이퍼(550)를 고정하여 회전시키는 척(530)이 장착되어 있다. 상기 공정 챔버(310, 320, 330)에서 식각 공정을 실시한 상기 웨이퍼(550)를 상기 로봇암(150)으로 이동시켜서 상기 척(530)에 고정하고, 상기 노즐(510)을 통하여 상기 웨이퍼(550)에 상기 순수를 분사하여 상기 웨이퍼(550)의 표면에 잔류하는 상기 공정가스를 제거한다. 상기 노즐(510)은 상기 웨이퍼(550)에 상기 순수를 균일하게 분사하기 위하여 상기 웨이퍼(550) 위를 가로질러 왕복하는 것이 바람직하다. 일반 적으로 상기 웨이퍼(550)에 잔류하는 상기 공정가스는 상기 순수에 녹기 때문에 순수 세정에 의해서 충분히 제거할 수 있다. 그리고 상기 웨이퍼(550)에 묻은 상기 순수는 상기 척(530)을 고속으로 회전시켜 건조시켜서 제거한다. 그리고 만일 상기 웨이퍼(550)에 잔류하는 상기 공정가스가 상기 순수에 의해서 제거되지 않는 경우에는 상기 노즐(510)에 상기 공정가스를 제거할 수 있는 적절한 용매로 바꾸어 사용하는 것이 가능하다. 이러한 경우에는 용매의 종류에 따라 추가의 다른 노즐을 장착하여 사용한다. The process chambers 310, 320, and 330 each occupy one closed space, and the wafer is accommodated in the process chambers 310, 320, and 330 to produce a semiconductor device. For example, a process of etching using the photoresist pattern formed on the wafer, a process of removing the photoresist pattern on the wafer after etching, and the process chambers 310 and 320 according to the type of material for etching the wafer. , 330) can be used. The cleaning chamber 500 is equipped with a nozzle 510 for spraying pure water and a chuck 530 for fixing and rotating the wafer 550. The wafer 550 subjected to the etching process in the process chambers 310, 320, and 330 is moved to the robot arm 150 to be fixed to the chuck 530, and the wafer 550 through the nozzle 510. The pure water is sprayed on the C) to remove the process gas remaining on the surface of the wafer 550. The nozzle 510 is preferably reciprocated across the wafer 550 to uniformly spray the pure water on the wafer 550. In general, since the process gas remaining in the wafer 550 is dissolved in the pure water, the process gas can be sufficiently removed by pure water cleaning. The pure water on the wafer 550 is removed by drying the chuck 530 at a high speed. If the process gas remaining in the wafer 550 is not removed by the pure water, the nozzle 510 may be replaced with a suitable solvent capable of removing the process gas. In this case, additional nozzles are used depending on the type of solvent.

그리고 상기 로드락 챔버(210, 220)는 상기 이송 챔버(100)와 상기 공정 챔버(310, 320, 330)를 외부의 환경으로부터 보호하며 생산성을 높이기 위하여 로딩부와 언로딩부로 나누어 사용한다. 상기 보조 챔버(410, 420)는 상기 공정 챔버(310, 320, 330)에서 실시하는 공정의 정밀도를 높이기 위하여 필요에 따라 상기 웨이퍼의 방향을 일정하게 정렬하는 플랫존 정렬 장치를 장착하여 사용하기도 한다. The load lock chambers 210 and 220 may be divided into a loading unit and an unloading unit to protect the transfer chamber 100 and the process chambers 310, 320, and 330 from an external environment and increase productivity. The auxiliary chambers 410 and 420 may be equipped with a flat zone alignment device that constantly aligns the direction of the wafer as necessary in order to increase the accuracy of the process performed in the process chambers 310, 320 and 330. .

본 발명의 다중 챔버 반도체 제조 장비에서 상기 보조 챔버(410, 420)는 생산의 필요에 따라 다양하게 변형하여 사용할 수 있기 때문에 그 용도가 여러 가지로 변할 수 있다. In the multi-chamber semiconductor manufacturing equipment of the present invention, since the auxiliary chambers 410 and 420 can be variously modified according to the needs of production, their uses may be variously changed.

이상에서, 본 발명의 구성 및 동작을 상기한 설명 및 도면에 따라 도시하였지만, 이는 예를 들어 설명한 것에 불과하며 본 발명의 기술적 사상 및 범위를 벗어나지 않는 범위 내에서 다양한 변화 및 변경이 가능함은 물론이다.In the above, the configuration and operation of the present invention has been shown in accordance with the above description and drawings, but this is merely described, for example, and various changes and modifications are possible without departing from the spirit and scope of the present invention. .

상술한 바와 같이 본 발명에 의하면, 본 발명의 다중 챔버 반도체 제조 장비는 종래와 달리 상기 웨이퍼를 세정할 수 있는 세정 챔버를 추가하여 상기 식각 공정 후에 상기 웨이퍼에 잔류하는 상기 공정가스 충분히 제거할 수 있다. 이로 인하여 상기 웨이퍼에 남은 상기 공정가스에 의해서 상기 공정 챔버와 주변 환경을 오염되거나 부식되는 것을 방지하는 효과가 있다.As described above, according to the present invention, the multi-chamber semiconductor manufacturing apparatus of the present invention can remove the process gas remaining on the wafer after the etching process by adding a cleaning chamber capable of cleaning the wafer, unlike the conventional art. . As a result, the process gas remaining on the wafer may prevent the process chamber and the surrounding environment from being contaminated or corroded.

Claims (2)

로드락 챔버 및 복수개의 공정 챔버를 포함하는 반도체 제조 장비에 있어서,In the semiconductor manufacturing equipment comprising a load lock chamber and a plurality of process chambers, 순수를 분사하는 노즐 및 웨이퍼를 고정하여 회전시키는 척을 포함하는 세정 챔버를 구비하는 것을 특징으로 하는 반도체 제조 장비. And a cleaning chamber including a nozzle for spraying pure water and a chuck to fix and rotate the wafer. 제1항에 있어서,The method of claim 1, 상기 노즐은 상기 척에 고정된 상기 웨이퍼 위를 가로 질러 이동하면서 순수를 분사하는 것을 특징으로 하는 반도체 제조 장비.And the nozzle sprays pure water while moving across the wafer fixed to the chuck.
KR1020050033646A 2005-04-22 2005-04-22 Multi chamber equipment for manufacturing semiconductor KR20060111193A (en)

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