CN209981177U - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
- Publication number
- CN209981177U CN209981177U CN201920901746.8U CN201920901746U CN209981177U CN 209981177 U CN209981177 U CN 209981177U CN 201920901746 U CN201920901746 U CN 201920901746U CN 209981177 U CN209981177 U CN 209981177U
- Authority
- CN
- China
- Prior art keywords
- wafer
- wafer cleaning
- shielding plate
- cleaning device
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 75
- 238000001035 drying Methods 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 23
- 238000009826 distribution Methods 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005406 washing Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 79
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 organic matters Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model relates to a semiconductor manufacturing technical field especially relates to a wafer belt cleaning device. The wafer cleaning device comprises: the support table is used for bearing the wafer; the shielding plate is coaxially arranged with the support platform and is positioned above the support platform; the first spray hole is positioned in the center of the shielding plate and used for spraying cleaning liquid to the wafer; and the second spray holes are positioned on the shielding plate and used for spraying dry gas to the wafer. The utility model provides a wafer cleaning device, through the center of shield plate sets up the first orifice that is used for spraying the washing liquid to make the in-process using dry gas drying wafer, even the shield plate is rotatory, can not make the washing liquid by being thrown away under the effect of centrifugal force yet, avoided causing secondary pollution to the wafer, improved wafer cleaning device's cleaning performance.
Description
Technical Field
The utility model relates to a semiconductor manufacturing technical field especially relates to a wafer belt cleaning device.
Background
Currently, the semiconductor Integrated Circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have resulted in generations of ICs where each generation of ICs has smaller and more complex circuits than previous generations of ICs. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry (i.e., the smallest component that can be produced using a fabrication process) has decreased. In addition to IC components becoming smaller and more complex, the wafers on which the ICs are fabricated are becoming larger and larger, which places higher demands on the quality of the wafers.
In the wafer processing process, pollutants such as organic matters, particles, metal impurities, natural oxide layers, quartz, plastics and the like which are remained on the surface of the wafer need to be removed according to needs, and the surface characteristics of the wafer are not damaged. For this reason, a plurality of cleaning steps are required in the manufacturing process of the wafer. However, as feature sizes continue to shrink, the requirements for wet cleaning processes in wafer fabrication are becoming increasingly demanding. Wet cleaning usually employs chemical liquid and deionized water as cleaning agents, and a series of cleaning process steps are performed to remove contaminants on the surface of the wafer. Wafer wet cleaning in the prior art is divided into trench cleaning and single wafer cleaning. With the increasing requirement on the surface cleanliness of the wafer, the single wafer cleaning can reduce the cross contamination in the cleaning process and improve the yield, so the conventional wet cleaning gradually changes from the conventional trough cleaning to the single wafer cleaning.
During the drying of the cleaned wafer using the single wafer type cleaning apparatus, a Shield Plate (Shield Plate) was lowered to a position 0.3mm away from the wafer, and nitrogen gas was sprayed to the wafer from a gas nozzle fixed in the Shield Plate to create an inert atmosphere for the wafer. Along with the rapid rotation of the wafer on the supporting platform, the residual moisture on the surface of the wafer is thrown out by centrifugal force, and the water vapor in the pattern groove on the surface of the wafer is taken out by nitrogen, thereby achieving the purpose of drying the wafer.
However, in the conventional single wafer type cleaning apparatus, since the first nozzle for spraying deionized water and the second nozzle for spraying nitrogen gas are both offset from the center of the shielding plate, during the process of drying the wafer: on one hand, under the action of centrifugal force, deionized water remained in the first nozzle is thrown out, and water stains are easily formed on the surface of the wafer; on the other hand, the nitrogen sprayed by the second nozzle is unevenly distributed on the surface of the wafer, so that the drying effect is influenced. In addition, the conventional first nozzle and the second nozzle are locked on the shielding plate by four screws, and when the moments for locking the nozzles are different, the positions of the two nozzles relative to the center of the wafer are also shifted, thereby further affecting the drying effect.
Therefore, how to improve the cleaning effect of the wafer cleaning device, avoid causing water stain residue, and improve the drying effect after cleaning is a technical problem to be solved urgently at present.
SUMMERY OF THE UTILITY MODEL
The utility model provides a wafer cleaning device for solve the relatively poor problem of current wafer cleaning device cleaning performance.
In order to solve the above problem, the utility model provides a wafer cleaning device, include:
the support table is used for bearing the wafer;
the shielding plate is coaxially arranged with the support platform and is positioned above the support platform;
the first spray hole is positioned in the center of the shielding plate and used for spraying cleaning liquid to the wafer;
and the second spray holes are positioned on the shielding plate and used for spraying dry gas to the wafer.
Preferably, the plurality of second nozzle holes are symmetrically distributed about the center of the shielding plate.
Preferably, the shield plate includes a housing; the wafer cleaning device further comprises:
the first pipeline extends from the outside to a cavity surrounded by the shell and is used for conveying the cleaning liquid to the first spray hole;
and the second pipeline extends from the outside to a cavity surrounded by the shell and is used for transmitting the drying gas to the second spray hole.
Preferably, the method further comprises the following steps:
and the distribution disc is positioned in the cavity, is communicated with the second pipeline and is used for uniformly distributing the drying gas to the second spray holes.
Preferably, the distribution plate is provided with a through hole penetrating through the distribution plate in the axial direction of the distribution plate; the first pipeline penetrates through the through hole and is communicated with the first spray hole.
Preferably, a groove is formed in one side, facing the support table, of the shielding plate, and the first nozzle hole and the second nozzle hole are located in the groove.
Preferably, the number of the second nozzle holes is greater than or equal to 4.
Preferably, the cleaning solution is deionized water.
Preferably, the drying gas is nitrogen or an inert gas.
The utility model provides a wafer cleaning device, through the center of shield plate sets up the first orifice that is used for spraying the washing liquid to make the in-process using dry gas drying wafer, even the shield plate is rotatory, can not make the washing liquid by being thrown away under the effect of centrifugal force yet, avoided causing secondary pollution to the wafer, improved wafer cleaning device's cleaning performance.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 2 is a schematic top view of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 3 is a schematic distribution diagram of the first nozzle holes and the second nozzle holes according to the embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of the wafer cleaning apparatus according to the present invention with reference to the accompanying drawings.
This embodiment provides a wafer cleaning device, and fig. 1 is the utility model discloses wafer cleaning device's among the embodiment cross-sectional structure sketch map, and fig. 2 is the utility model discloses wafer cleaning device's among the embodiment overlook structure sketch map. As shown in fig. 1 and 2, the wafer cleaning apparatus according to the present embodiment includes:
a support table 10 for supporting a wafer 11;
a shield plate 12 disposed coaxially with the support table 10 and located above the support table 10;
a first nozzle 21 located at the center of the shielding plate 12 for spraying a cleaning solution to the wafer 11;
and a plurality of second nozzle holes 22 located on the shielding plate 12 for spraying a dry gas to the wafer 11.
Specifically, during the process of cleaning the wafer 11, the wafer 11 is placed on the surface of the support table 10 such that the axis of the support table 10 coincides with the axis of the wafer 11. With the high-speed rotation of the support table 10, the wafer 11 thereon is rotated. Then, the cleaning solution is sprayed out through the first nozzle 21 to clean the wafer 11. Finally, the dry gas is ejected from the second nozzle 22 to remove the cleaning solution remaining on the surface of the wafer 11, thereby drying the wafer 11. The shape of the shielding plate 12 is preferably circular, and the diameter of the shielding plate 12 is preferably greater than or equal to the diameter of the wafer 11. Since the wafer 11 is not visible at the angle shown in fig. 2, the position of the wafer is indicated in dashed lines.
In the embodiment, the first nozzle hole 21 is disposed at the center of the shielding plate 12, so that even in the process of rotationally spraying the drying gas on the shielding plate 12, the cleaning liquid remaining in the first nozzle hole 21 is not thrown to the surface of the wafer 11 under the action of centrifugal force, thereby preventing the wafer 11 from being secondarily polluted in the drying process and improving the drying effect of the wafer 11.
Fig. 3 is a schematic distribution diagram of the first nozzle holes and the second nozzle holes according to the embodiment of the present invention. Preferably, the plurality of second nozzle holes 22 are symmetrically distributed about the center of the shielding plate 12.
Specifically, the plurality of second nozzle holes 22 are distributed around the outer periphery of the first nozzle hole 21 and are symmetrically distributed about the center of the shield plate 12. With the structure, in the process of drying the wafer 11, the drying gas can uniformly cover the surface of the wafer 11, so that the drying effect of the wafer 11 is improved, and meanwhile, the drying efficiency of the wafer 11 is also improved.
Preferably, the shield plate 12 comprises a housing; the wafer cleaning device further comprises:
a first pipe 14 extending from the outside to a cavity surrounded by the housing, for transmitting the cleaning liquid to the first nozzle hole 21;
and a second pipe 15 extending from the outside to a cavity surrounded by the housing, for transmitting the dry gas to the second nozzle 22.
Preferably, the wafer cleaning apparatus further includes:
and the distribution plate 16 is positioned in the cavity, is communicated with the second pipeline 15, and is used for uniformly distributing the drying gas to the second spray holes 22.
Preferably, in the axial direction along the distribution plate 16, there is a through hole passing through the distribution plate 16; the first duct 14 passes through the through hole and communicates with the first nozzle hole 21.
The distribution plate 16 is provided to further facilitate the uniform distribution of the drying gas over the surface of the wafer 11. Specifically, the first pipe 14 passes through the distribution plate 16 and communicates with the first nozzle 21, that is, the cleaning solution is sequentially sprayed onto the surface of the wafer 11 through the first pipe 14 and the first nozzle 21. The inlet of the distribution plate 16 is communicated with the second pipeline 15, the outlet is communicated with one end of a third pipeline 17, and the other end of the third pipeline 17 is communicated with the second spray hole 22. The dry gas enters the distribution plate 16 through the second pipe 15, is uniformly distributed by the distribution plate 16, and is transmitted to the second nozzle 22 from the third pipe 17, that is, the dry gas is sequentially sprayed to the surface of the wafer 11 through the second pipe 15, the distribution plate 16, the third pipe 17, and the second nozzle 22. The distribution plate 16 may be welded directly into the cavity to further ensure even distribution of the drying gas.
Preferably, a groove 13 is formed on a side of the shielding plate 12 facing the supporting table 10, and the first nozzle hole 21 and the second nozzle hole 22 are both located in the groove 13.
Specifically, the first nozzle holes 21 are located at the bottom of the groove 13, and the second nozzle holes 22 are distributed on the sidewall of the groove 13.
In the embodiment, the first nozzle hole 21 and the second nozzle hole 22 are directly arranged on the shielding plate 12, and no additional screw is needed for locking, so that the position deviation of the first nozzle hole 21 and the second nozzle hole 22 caused by disassembly and assembly is avoided, and the cleaning effect of the wafer is further improved while the wafer cleaning process is simplified.
The specific number of the second nozzle holes 22 can be selected by those skilled in the art according to actual needs. Preferably, the number of the second nozzle holes 22 is greater than or equal to 4. In fig. 2 and 3, the example in which 8 second nozzle holes 22 are provided will be described.
The type of the cleaning liquid can be selected by those skilled in the art according to actual needs. Preferably, the cleaning solution is deionized water.
Preferably, the drying gas is nitrogen or an inert gas. The inert gas includes argon gas and the like.
The wafer cleaning device provided by the specific embodiment is characterized in that the first spray hole for spraying the cleaning liquid is formed in the center of the shielding plate, so that the cleaning liquid is not thrown away under the action of centrifugal force even if the shielding plate rotates in the process of drying the wafer by using dry gas, secondary pollution to the wafer is avoided, and the cleaning effect of the wafer cleaning device is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A wafer cleaning apparatus, comprising:
the support table is used for bearing the wafer;
the shielding plate is coaxially arranged with the support platform and is positioned above the support platform;
the first spray hole is positioned in the center of the shielding plate and used for spraying cleaning liquid to the wafer;
and the second spray holes are positioned on the shielding plate and used for spraying dry gas to the wafer.
2. The wafer cleaning device according to claim 1, wherein the plurality of second nozzle holes are symmetrically distributed about a center of the shielding plate.
3. The wafer cleaning apparatus of claim 2, wherein the shield plate comprises a housing;
the wafer cleaning device further comprises:
the first pipeline extends from the outside to a cavity surrounded by the shell and is used for conveying the cleaning liquid to the first spray hole;
and the second pipeline extends from the outside to a cavity surrounded by the shell and is used for transmitting the drying gas to the second spray hole.
4. The wafer cleaning apparatus according to claim 3, further comprising:
and the distribution disc is positioned in the cavity, is communicated with the second pipeline and is used for uniformly distributing the drying gas to the second spray holes.
5. The wafer cleaning apparatus according to claim 4, wherein a through hole penetrating through the distribution plate is provided in an axial direction of the distribution plate; the first pipeline penetrates through the through hole and is communicated with the first spray hole.
6. The wafer cleaning apparatus as claimed in claim 2, wherein a side of the shielding plate facing the supporting platform has a groove, and the first nozzle and the second nozzle are located in the groove.
7. The wafer cleaning device according to claim 2, wherein the number of the second nozzle holes is greater than or equal to 4.
8. The wafer cleaning apparatus as claimed in claim 1, wherein the cleaning solution is deionized water.
9. The wafer cleaning apparatus according to claim 1, wherein the dry gas is nitrogen or an inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920901746.8U CN209981177U (en) | 2019-06-14 | 2019-06-14 | Wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920901746.8U CN209981177U (en) | 2019-06-14 | 2019-06-14 | Wafer cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209981177U true CN209981177U (en) | 2020-01-21 |
Family
ID=69266240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920901746.8U Expired - Fee Related CN209981177U (en) | 2019-06-14 | 2019-06-14 | Wafer cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209981177U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111451938A (en) * | 2020-04-08 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Polishing carrier cleaning device and polishing carrier cleaning method |
| CN112071782A (en) * | 2020-09-16 | 2020-12-11 | 沈阳芯源微电子设备股份有限公司 | Wafer back surface cleaning device and method and cleaning unit |
| CN112736006A (en) * | 2020-12-30 | 2021-04-30 | 上海至纯洁净系统科技股份有限公司 | Device for cleaning multiple kinds of single-wafer carriers |
| WO2021197209A1 (en) * | 2020-03-31 | 2021-10-07 | 长鑫存储技术有限公司 | Semiconductor device, and production method for semiconductor structure |
| CN114453321A (en) * | 2022-02-25 | 2022-05-10 | 上海普达特半导体设备有限公司 | Single wafer type wafer cleaning device |
-
2019
- 2019-06-14 CN CN201920901746.8U patent/CN209981177U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021197209A1 (en) * | 2020-03-31 | 2021-10-07 | 长鑫存储技术有限公司 | Semiconductor device, and production method for semiconductor structure |
| CN111451938A (en) * | 2020-04-08 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Polishing carrier cleaning device and polishing carrier cleaning method |
| CN112071782A (en) * | 2020-09-16 | 2020-12-11 | 沈阳芯源微电子设备股份有限公司 | Wafer back surface cleaning device and method and cleaning unit |
| CN112071782B (en) * | 2020-09-16 | 2024-03-15 | 沈阳芯源微电子设备股份有限公司 | Wafer back surface cleaning device, method and cleaning unit |
| CN112736006A (en) * | 2020-12-30 | 2021-04-30 | 上海至纯洁净系统科技股份有限公司 | Device for cleaning multiple kinds of single-wafer carriers |
| CN114453321A (en) * | 2022-02-25 | 2022-05-10 | 上海普达特半导体设备有限公司 | Single wafer type wafer cleaning device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200121 |