KR20060088228A - Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof - Google Patents

Abstract

A light emitting device capable of emitting light of multiple wavelengths using nanometer fluorescent materials. The light emitting device includes an initial light source that emits initial color light. The initial light source is covered with a transparent film member, the surface or the inside of the initial light source or the film member is coated with one or more nanometer fluorescent material. The nanometer fluorescent material absorbs the initial color light and is excited, and emits fluorescent light different from the initial color light in the excited state. The initial chromatic light and the fluorescent light are combined with each other to form a plurality of wavelengths of light, and the plurality of wavelengths of light are emitted from the light emitting device. In addition, the combination of nanometer fluorescent materials of various particle sizes allows the emission of multiple wavelengths of light of various dominant wavelengths.

Description

LIGHT APPARATUS CAPABLE OF EMITTING LIGHT OF MULTIPLE WAVELENGTHS USING NANOMETER FLUORESCENT MATERIAL, LIGHT DEVICE AND MANUFACTURING METHOD THEREOF}

1 is a schematic diagram of a light emitting device capable of emitting light of multiple wavelengths according to a first embodiment of the present invention.

2 is a schematic diagram of a light emitting device capable of emitting light of multiple wavelengths according to a second embodiment of the present invention.

3 is a diagram of a waveform generator and a circuit according to a third compensation method of the present invention.

4 is a diagram of a waveform generator and a circuit according to a fourth compensation method of the present invention.

5 is a diagram of a waveform generator and a circuit according to a fifth compensation method of the present invention.

Explanation of symbols on the main parts of the drawings

10; Light emitting device 11; Nanometer fluorescent material

12; Die 13; Lead frame

14; Molding member 15; wire

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, a light emitting device capable of emitting light of a plurality of wavelengths using a nanometer fluorescent material, and a manufacturing method thereof, and more particularly to a semiconductor photoelectric device using a nanometer fluorescent material for light emission.

Light emitting diodes (LEDs) are photoelectric devices that emit light automatically when electrically connected. Small electrical LEDs with good electrical efficiency and easy initial drive are widely used in general lighting, large billboards, and backlight sources for monitors.

Currently, LEDs are classified into various categories, namely GaAs, GaAs1-xPx and GaP, depending on the semiconductor material used for manufacturing. In addition, nitrogen-doped semiconductor materials consisting of GaAs1-xPx or GaP series produce rays of various colors. In general, the light emitted by the LEDs is characterized by a monochromatic wavelength, which monochromatic wavelength depends on the change in energy involved in the light-emitting electron transfer. Light wavelengths used include infrared light, red light, green light, yellow light, and blue light. Since the human eye can recognize three different colors of light, namely red light, green light and blue light (known as “three primary colors” (RGB)), humans can perceive light of various colors.

Each LED of red wavelength, green wavelength and blue wavelength can be arranged in parallel to produce light of any other color by mixing. U. S. Patent No. 5,995, 070 describes a display device in which each pixel comprises a parallel light source consisting of a red light source, a blue light source and two green light source diodes.

As described above, the white light generated by mixing light sources of different wavelengths has problems of color and luminance scattering, and thus it is rather difficult to produce desired white light. In addition, the design of the system is complicated because it consists of diodes of different electrical characteristics that must each be controlled by appropriate drive circuits.

In addition, the white light generation method disclosed in U.S. Patent No. 6,614,179, comprises the steps of emitting blue light using an LED and then exciting the phosphor to cause the excited phosphor to emit yellow light, and And then combining the two light sources to form white light by mixing, wherein the blue light has a wavelength of 420 nm to 490 nm and the phosphor is composed of {[(Y, Gd) Sm] (AlGa) O: Ce}. do. However, the white light produced by the method hardly represents the actual color of the object, or in other words, the color temperature is relatively high and thus the color rendering index is not satisfactory.

Therefore, in order to express high color rendering index white light, it is necessary to adjust or control the ratio of each color light in the light emitted by the light source so that the emitted light can access the daylight with respect to the component ratio. As a result, it is necessary to make the color of the object illuminated by the emitted light clear. In addition, with respect to fluorescent materials, the focus of research and development for some time has been the composition of yttrium aluminum garnet (YAG) crystals (molecular formula: X ₃ (A ₃ B ₂ ) O ₁₂ ), for example YAG phosphor structures. Y ₃ (Al ₃ Al ₂ ) O ₁₂ , (Y _3-x Ce _x ) Al ₅ O ₁₂ , (Y _2.9 Tb _0.05 ) Al ₅ O ₁₂ , and (Y _2.95-a Ce _0.05 Gd _a ) (Al _{5 -b} Ga _b ) O ₁₂ is set.

In short, there is an urgent need in the market for light emitting devices that emit light characterized by high brightness and brightness as well as a similar ratio of daylight to daylight.

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting device and a light emitting device that emit light of a plurality of wavelengths using a nanometer fluorescent material and a method of manufacturing the same, wherein the nanometer phosphor is an initial color light emitted by the light emitting device. ) And are excited, in which the nanometer phosphor emits fluorescent light whose wavelength differs from the initial color light. An initial color light source and a fluorescent light source are combined to create a light emitting device that emits light of multiple wavelengths.

Another object of the present invention is to provide a light emitting device that emits light of multiple wavelengths by adjusting the size of nanoparticles of a fluorescent material, wherein a light source of white light is obtained by mixing nanometer fluorescent materials of various different particle sizes.

In order to achieve the above object, the present invention provides a light emitting device and a light emitting device that emits light of a plurality of wavelengths using a nanometer fluorescent material and a method of manufacturing the same, wherein the light emitting device is an initial light source for emitting initial color light It includes. The initial light source is covered with a transparent molding member; The surface or the inside of the initial light source or film member is coated with or mixed with one or more nanometer fluorescent materials. The nanometer fluorescent material absorbs the initial color light and is excited, and emits fluorescent light of a wavelength different from that of the initial color light in the excited state. The initial chromatic light and the fluorescent light are combined with each other to form a plurality of wavelengths of light, and the plurality of wavelengths of light are emitted from the light emitting device. In addition, the combination of nanometer fluorescent materials of various particle sizes allows the emission of multiple wavelengths of light of various dominant wavelengths.

LEDs, preferably nitride semiconductor based LEDs, serve as initial light sources.

Nanometer fluorescent materials consist of organic fluorescent materials and inorganic fluorescent materials. The nanometer fluorescent material is applied directly to the surface of the molding member or to the surface of the initial light source. The nanometer fluorescent material may also be applied to the interior of the molding member.

A method of manufacturing a light emitting device includes: providing an initial light source that is installed by mounting and electrically connecting a light emitting element on a substrate or lead frame and capable of emitting initial color light; Coating the initial light source with one or more nanometer fluorescent materials; And coating and protecting the initial light source and the nanometer fluorescent material with a molding member.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

As evidenced by the research and development of nanotechnology, when material particles are miniaturized to nano-size, they exhibit quantum effects, at which point changes in energy levels, physical properties and chemical properties will occur. As shown in Table 1, the fluorescent material CdSe with a particle size of 2.8 nm produces green fluorescence with a wavelength of 533 nm when excited and produces orange fluorescence with a wavelength of 585 nm when excited with a particle size of 4.0 nm. 5.6 nm produces red fluorescence with a wavelength of 640 nm when excited. This data means that the wavelength of light emitted can be controlled and controlled by the size of the nano-particles. Using various particle sizes, light sources with multiple wavelengths and high color rendering indexes can be produced. Assuming that the LED emits blue light and the LED is coated with a fluorescent material consisting of 2.8 nm particles and 5.6 nm particles, the three rays of red wavelength, green wavelength and blue wavelength may each be combined to form white light.

Table 1: Size of nano-particles and fluorescence generated by nano-particles in nm

Fluorescent Colors green yellow orange color Orange Red Emission wavelength 535 ± 10 560 ± 10 585 ± 10 610 ± 10 640 ± 10 Peak wavelength 522 547 572 597 627 Particle size 2.8 3.5 4.0 4.7 5.6

1 is a schematic diagram of a light emitting device capable of emitting multiple wavelengths of light in accordance with the present invention. The light emitting device 10 includes a die (or chip) 12 of a light emitting element fixed to the cup-shaped member of the lead frame 13; The die 12, which is electrically connected to the positive electrode 13b and the negative electrode 13a of the lead frame 13 via the wire 15, may be an LED or a laser diode. The cup-shaped member is filled with nanometer fluorescent material 11 such that die 12 emits initial color light when electrically connected, and consequently the surrounding nanometer fluorescent material 11 is initially light. Excited to emit fluorescent light having a wavelength different from that of the initial color light. Initial color light and fluorescent light are combined to form light of various wavelengths, and the light of various wavelengths is emitted through the molding member 14.

The nanometer fluorescent material 11 is an organic material or an inorganic material, or a material in which the two materials are combined. The inorganic material may be, for example, one of nano-particle sizes or components, such as silicon oxide, silicon oxy-nitride, silicon nitride, aluminum oxide, zinc oxide, yttrium aluminum garnet (YAG) phosphor, or the like. More oxides, nitrides, nitrogen oxides or sulfides; Zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), lead selenide (PbSe), gallium nitrate Ride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Aluminum Indium Gallium Nitride (AlInGaN), Gallium Phosphide (GaP), Gallium Arsenic Phosphide (GaAsP), Gallium Arsenide (GaAs) ), Aluminum arsenide (AlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP), indium gallium phosphide (InGaP), indium aluminum phosphide (InAlP), silicon (Si), germanium (Ge) ), A mixture of nano-materials of various particle sizes, such as silicon carbide (SiC), carbon (C). The organic material is also a mixture of one or more of silica polymers such as silicone, epoxy, and polymers. Thus, the nanometer fluorescent material 11 can be excited, in which the nanometer fluorescent material emits fluorescence of a single wavelength or multiple wavelengths.

The nanometer fluorescent material 21 may not only be placed on the die 12 as shown in FIG. 1, but may also be applied or attached to the surface of the molding member 24 as shown in FIG. 2. The initial color light emitted by the die 12 of the LED excites the nanometer fluorescent material 21 and consequently passes through the molding member 24 before the excited nanometer fluorescent material 21 emits fluorescent light. In this case, the LED is preferably made of a nitride semiconductor such as nitride of aluminum, gallium and indium. The laser diode may also act as an initial light source.

3 is a schematic representation of another light emitting device for emitting multiple wavelengths of light in accordance with the present invention. The molding member 34 of the light emitting device 30 is coated with a layer of nanometer fluorescent material 312. The area surrounding die 12 is also covered with other nanometer fluorescent material 311.

In addition, as shown in FIG. 4, the nanometer fluorescent material 41 may be found inside the film member 44. During the molding process, a molding compound, which is a mixture of nanometer fluorescent material 41 and epoxy, is injected into the mold to form a light emitting device 40 as shown in FIG.

5 is a schematic representation of another light emitting device for emitting multiple wavelengths of light in accordance with the present invention. Unlike the above figures showing a pin type package, FIG. 5 shows a light emitting device 50 of the SMD (surface mount device) type. The die 52 is fixed to the n-type conductive copper foil 53b on the surface of the insulating layer 53c and is electrically connected to the p-type conductive copper foil 53a through the wire 55. The p-type conductive copper foil 53a, the n-type conductive copper foil 53b, and the insulating layer 53c together form a substrate 53 having a circuit. Before the molding member 54 is deposited on the substrate 53, nanometer fluorescent materials 511 and 512 may be applied to the die 52 surface. In addition, the nanometer fluorescent material 511 may be formed directly on the die 52 surface by a deposition process.

The light emitting device of the present invention can emit light of a plurality of wavelengths by using a nanometer fluorescent material and a light emitting element.

Claims (46)

A light emitting device that can emit light of multiple wavelengths using nanometer fluorescent materials: An initial light source for emitting initial color light; A molding member laminated on the initial light source; And One or more nanometer fluorescent materials that are excited by the initial color light and emit fluorescent light different from the initial color light; The initial color light is mixed with the fluorescent light to emit light of a plurality of wavelengths. The light emitting device of claim 1, wherein the initial light source is a light emitting diode (LED). The light emitting device of claim 2, wherein the LED is a nitride semiconductor LED. The light emitting device of claim 1, wherein the nanometer fluorescent material is composed of at least one of an organic material and an organic material. The light emitting device of claim 1, wherein the nanometer fluorescent material is a mixture of nano-materials of various particle sizes. The method of claim 4, wherein the inorganic material is zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe) having one or more nano-particle size Cadmium telluride (CdTe), lead selenide (PbSe), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), gallium phosphide ( GaP), gallium arsenic phosphide (GaAsP), gallium arsenide (GaAs), aluminum arsenide (AlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP), indium gallium phosphide (InGaP) A light emitting device comprising at least one of indium aluminum phosphide (InAlP), silicon (Si), germanium (Ge), silicon carbide (SiC), and carbon (C). The light emitting device of claim 4, wherein the inorganic material is composed of one or more compounds of oxides, nitrides, nitrogen oxides, and sulfides having one or more nano-particle sizes. 8. The light emitting device of claim 7, wherein the compound comprises silicon oxide, silicon oxy-nitride, silicon nitride, aluminum oxide, zinc oxide, yttrium aluminum garnet (YAG) phosphor. The light emitting device of claim 4, wherein the organic material is composed of at least one of silicon, epoxy, and silica polymer. The light emitting device of claim 1, wherein the nanometer fluorescent material is placed directly on the initial light source. The light emitting device of claim 1, wherein the nanometer fluorescent material is dispersed in the molding member. The light emitting device of claim 1, wherein the nanometer fluorescent material is covered on a surface of the molding member. A method of making a light emitting device that can emit light of multiple wavelengths using nanometer fluorescent materials: Providing an initial light source capable of emitting initial color light; Coating the initial light source with one or more nanometer fluorescent materials; And And covering the initial light source with a molding member. The method of claim 13, further comprising forming an initial light source by mounting the light emitting element on the lead frame. The method of claim 14, wherein the light emitting element is a light emitting diode (LED) or a laser diode. The method of claim 15, wherein the LED is a nitride semiconductor LED. The method of claim 13, wherein the nanometer fluorescent material is deposited on the initial light source by a semiconductor manufacturing process. The method of claim 13, wherein the nanometer fluorescent material comprises at least one of an organic material and an inorganic material. The method of claim 13, wherein the nanometer fluorescent material is a mixture of nano-materials of various particle sizes. 19. The method of claim 18, wherein the inorganic material is zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe) having at least one nano-particle size. , Cadmium telluride (CdTe), lead selenide (PbSe), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), gallium force Galide (GaP), Gallium arsenic phosphide (GaAsP), Gallium arsenide (GaAs), Aluminum arsenide (AlAs), Aluminum gallium arsenide (AlGaAs), Aluminum gallium indium phosphide (AlGaInP), Indium gallium phosphide ( A light emitting device manufacturing method comprising at least one of InGaP), indium aluminum phosphide (InAlP), silicon (Si), germanium (Ge), silicon carbide (SiC), and carbon (C). 19. The method of claim 18, wherein the inorganic material is comprised of one or more compounds of oxides, nitrides, nitrogen oxides, and sulfides having one or more nano-particle sizes. 22. The method of claim 21, wherein the compound comprises silicon oxide, silicon oxy-nitride, silicon nitride, aluminum oxide, zinc oxide, yttrium aluminum garnet (YAG) phosphor. 19. The method of claim 18, wherein the organic material is comprised of one or more of silicon, epoxy, and silica polymers. 15. The method of claim 14, wherein said nanometer fluorescent material is placed on said light emitting element. The method of claim 14, wherein the nanometer fluorescent material is positioned between the light emitting element and the molding member. 15. The method of claim 14, further comprising dispersing another nanometer fluorescent material within said molding member. The method of claim 13, further comprising coating another nanometer fluorescent material on the surface of the molding member. A light emitting device that can emit light of multiple wavelengths using nanometer fluorescent materials: Electroluminescent semiconductors for emitting initial color light; And And at least one nanometer fluorescent material combined with said electroluminescent semiconductor and excited by said initial color light to emit fluorescent light different from said initial color light. 29. The light emitting device of claim 28, wherein said electroluminescent semiconductor is a light emitting diode (LED). 30. The light emitting device of claim 29, wherein the LED is a nitride semiconductor LED. 29. The light emitting device of claim 28, wherein the nanometer fluorescent material comprises at least one of an organic material and an organic material. 29. The light emitting device of claim 28, wherein said nanometer fluorescent material is a mixture of nano-materials of various particle sizes. 32. The method of claim 31, wherein the inorganic material is zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe) having one or more nano-particle sizes. Cadmium telluride (CdTe), lead selenide (PbSe), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), gallium phosphide ( GaP), gallium arsenic phosphide (GaAsP), gallium arsenide (GaAs), aluminum arsenide (AlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP), indium gallium phosphide (InGaP) Light emitting device comprising at least one of indium aluminum phosphide (InAlP), silicon (Si), germanium (Ge), silicon carbide (SiC), carbon (C). 32. The light emitting device of claim 31, wherein the inorganic material consists of one or more compounds of oxides, nitrides, nitrogen oxides, and sulfides having one or more nano-particle sizes. 35. The light emitting device of claim 34, wherein the compound comprises silicon oxide, silicon oxy-nitride, silicon nitride, aluminum oxide, zinc oxide, yttrium aluminum garnet (YAG) phosphor. 32. The light emitting device of claim 31, wherein the organic material is comprised of one or more of silicon, epoxy, and silica polymers. 29. The light emitting device of claim 28, wherein said nanometer fluorescent material is comprised of one or more fluorescent layers. 29. The light emitting device of claim 28, wherein the nanometer fluorescent material is stacked on the electroluminescent semiconductor. A method of manufacturing a light emitting device that can emit light of multiple wavelengths using a nanometer fluorescent material: Providing an electroluminescent semiconductor capable of emitting initial colored light; And And positioning at least one nanometer fluorescent material on said electroluminescent semiconductor. 40. The method of claim 39, wherein the electroluminescent semiconductor is a light emitting diode (LED) or a laser diode. 41. The method of claim 40, wherein the LED is a nitride semiconductor LED. 40. The method of claim 39, wherein the nanometer fluorescent material comprises at least one of an organic material and an inorganic material. 40. The method of claim 39, wherein the nanometer fluorescent material is a mixture of nano-materials of various particle sizes. 43. The method of claim 42, wherein the inorganic material is zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe) having one or more nano-particle sizes. Cadmium telluride (CdTe), lead selenide (PbSe), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlInGaN), gallium phosphide ( GaP), gallium arsenic phosphide (GaAsP), gallium arsenide (GaAs), aluminum arsenide (AlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP), indium gallium phosphide (InGaP) ), A method of manufacturing a light emitting device comprising at least one of indium aluminum phosphide (InAlP), silicon (Si), germanium (Ge), silicon carbide (SiC), carbon (C). 43. The method of claim 42, wherein the inorganic material consists of one or more compounds of oxides, nitrides, nitrogen oxides, and sulfides having one or more nano-particle sizes. 45. The method of claim 43, wherein the compound comprises silicon oxide, silicon oxy-nitride, silicon nitride, aluminum oxide, zinc oxide, yttrium aluminum garnet (YAG) phosphor.

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