KR20060076412A - 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 - Google Patents
감광성 수지 조성물 및 이를 이용한 블랙매트릭스 Download PDFInfo
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- KR20060076412A KR20060076412A KR1020040114817A KR20040114817A KR20060076412A KR 20060076412 A KR20060076412 A KR 20060076412A KR 1020040114817 A KR1020040114817 A KR 1020040114817A KR 20040114817 A KR20040114817 A KR 20040114817A KR 20060076412 A KR20060076412 A KR 20060076412A
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- photosensitive resin
- weight
- silane
- resin composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (6)
- 전체 감광성 수지 조성물 100중량부에 대해, 하기 [화학식 1] ~ [화학식 3]의 성분이 공중합된 카도계 바인더 수지 1∼40 중량부; 아크릴계 광중합성 모노머 1∼20 중량부; 광중합개시제 0.1∼10 중량부; 에폭시화물 0∼10 중량부; 블랙안료 5∼20 중량부; 용매 20∼80 중량부; 및 비닐기 또는 (메타)크릴록시기를 가지는 실란계 커플링제 0.01∼1 중량부;를 포함하는 것을 특징으로 하는 감광성 수지 조성물[화학식 1](A)[화학식 2](B)[화학식 3](C)CH2=CRCOOH(여기서 R은 수소원자, 탄소수 1∼10의 알킬기, 알릴기, 페닐기, 벤질기 또는탄소수 1∼8의 에톡시기를 나타내며, X는 할로겐원자를 나타낸다.)
- 제 1항에 있어서, 상기 카도계 바인더 수지의 성분 (A):(B):(C)는 1몰 : 2~4몰 : 2~8몰의 비로 공중합된 것을 특징으로 하는 감광성 수지 조성물.
- 제 1항에 있어서, 상기 카도계 바인더 수지의 분자량은 1,000 ~ 20,000인 것을 특징으로 하는 감광성 수지 조성물.
- 제 1항에 있어서, 상기 실란계 커플링제의 함량이 전체 감광성 수지 조성물 100중량부에 대해 0.05~0.5 중량부인 것을 특징으로 하는 감광성 수지 조성물.
- 제 1항에 있어서, 상기 비닐기를 가지는 실란계 커플링제는 비닐 트리메톡시 실란, 비닐 트리에톡시 실란 또는 비닐트리스(β-메톡시 에톡시) 실란이 사용되고, 상기 (메타)크릴록시기를 가지는 실란계 커플링제는 3-메타크릴록시 프로필 메틸 디메톡시 실란, 3-메타크릴록시 프로필 메틸 디에톡시 실란, 3-메타크릴록시 프로필 트리메톡시 실란, 3-메타크릴록시 프로필 트리에톡시 실란, 3-아크릴록시 프로필 트리메톡시 실란 또는 3-아크릴록시 프로필 메틸 디메톡시 실란이 사용되는 것을 특징으로 하는 감광성 수지 조성물.
- 청구항 1의 조성물 의해 제조되어 디스플레이 장치용으로 사용되는 것을 특징으로 하는 블랙매트릭스.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040114817A KR100671107B1 (ko) | 2004-12-29 | 2004-12-29 | 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040114817A KR100671107B1 (ko) | 2004-12-29 | 2004-12-29 | 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 |
Publications (2)
Publication Number | Publication Date |
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KR20060076412A true KR20060076412A (ko) | 2006-07-04 |
KR100671107B1 KR100671107B1 (ko) | 2007-01-17 |
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KR1020040114817A KR100671107B1 (ko) | 2004-12-29 | 2004-12-29 | 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100787715B1 (ko) * | 2005-12-29 | 2007-12-21 | 제일모직주식회사 | 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 |
WO2012044027A2 (en) * | 2010-09-30 | 2012-04-05 | Kolon Industries, Inc. | Photosensitive resin composition |
US8216770B2 (en) | 2006-10-16 | 2012-07-10 | Cheil Industries Inc. | Resin composition comprising cardo resin, method for forming pattern using the resin composition and color filter using pattern formed by the method |
US8273270B2 (en) | 2010-10-13 | 2012-09-25 | Cheil Industries Inc. | Photosensitive resin composition and light blocking layer using the same |
US8298454B2 (en) | 2010-12-10 | 2012-10-30 | Cheil Industries Inc. | Photosensitive resin composition and light blocking layer using the same |
US8318053B2 (en) | 2010-12-24 | 2012-11-27 | Cheil Industries Inc. | Photosensitive resin composition and color filter using the same |
US9334399B2 (en) | 2012-12-12 | 2016-05-10 | Cheil Industries Inc. | Photosensitive resin composition and black spacer using the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101266295B1 (ko) | 2009-09-09 | 2013-05-23 | 제일모직주식회사 | 흑색 감광성 수지 조성물 및 이를 이용하여 형성된 차광층 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5908720A (en) | 1995-10-13 | 1999-06-01 | Tokyo Ohka Kogyo Co., Ltd. | Photosensitive resin composition for forming light shielding films, black matrix formed by the same, and method for the production thereof |
KR100574321B1 (ko) * | 1999-02-04 | 2006-04-26 | 제일모직주식회사 | 감광성 수지 조성물 및 블랙매트릭스 |
JP2002116536A (ja) * | 2000-10-06 | 2002-04-19 | Jsr Corp | 感放射線性樹脂組成物、その硬化物および素子。 |
JP4400025B2 (ja) * | 2002-07-10 | 2010-01-20 | 住友化学株式会社 | ポリカルボン酸樹脂の製造方法 |
-
2004
- 2004-12-29 KR KR1020040114817A patent/KR100671107B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100787715B1 (ko) * | 2005-12-29 | 2007-12-21 | 제일모직주식회사 | 감광성 수지 조성물 및 이를 이용한 블랙매트릭스 |
US8216770B2 (en) | 2006-10-16 | 2012-07-10 | Cheil Industries Inc. | Resin composition comprising cardo resin, method for forming pattern using the resin composition and color filter using pattern formed by the method |
WO2012044027A2 (en) * | 2010-09-30 | 2012-04-05 | Kolon Industries, Inc. | Photosensitive resin composition |
WO2012044027A3 (en) * | 2010-09-30 | 2012-05-31 | Kolon Industries, Inc. | Photosensitive resin composition |
US8273270B2 (en) | 2010-10-13 | 2012-09-25 | Cheil Industries Inc. | Photosensitive resin composition and light blocking layer using the same |
US8298454B2 (en) | 2010-12-10 | 2012-10-30 | Cheil Industries Inc. | Photosensitive resin composition and light blocking layer using the same |
US8318053B2 (en) | 2010-12-24 | 2012-11-27 | Cheil Industries Inc. | Photosensitive resin composition and color filter using the same |
US9334399B2 (en) | 2012-12-12 | 2016-05-10 | Cheil Industries Inc. | Photosensitive resin composition and black spacer using the same |
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Publication number | Publication date |
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KR100671107B1 (ko) | 2007-01-17 |
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