KR20060055136A - Etching apparatus for fabricating semiconductor device - Google Patents

Abstract

There is provided an etching apparatus for manufacturing a semiconductor device capable of efficiently cleaning the lead by modifying the lead structure of the process chamber.

The etching apparatus for manufacturing a semiconductor device includes a process chamber body, a lower lead covering the upper part of the process chamber body and sealing the upper lid, an upper lead and an upper lead and the lower lead positioned on the upper surface of the lower lid and mounted with a heating block for heating the lower lead. Engaging means for engaging and securing.

Etching Equipment, Leads, Cleaning

Description

Etching apparatus for manufacturing semiconductor devices

1 is a structural diagram of an etching apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

2 is an exploded perspective view of the lid of FIG. 1.

3 is a cross-sectional view taken along the AA ′ direction of FIG. 2.

<Explanation of symbols on main parts of the drawings>

1 electrostatic chuck 2 electrode

3: electrode housing 4: liner

5: process chamber body 6: coil kit

7: reaction gas injection port 8: reaction gas supply passage

9: cap 10: wafer inlet

11a: upper lead 11b: lower lead

12: heating block 13: temperature sensor

14: power supply unit 15: coupling unit

16: handle

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to etching equipment for manufacturing semiconductor devices, and more particularly, to etching equipment for manufacturing semiconductor devices, which can efficiently clean leads by modifying lead structures of process chambers.

When a fine pattern is to be formed in a semiconductor device manufacturing process, a dry etching process is mainly used. Dry etching is an anisotropic etching process compared to wet etching has the advantage of forming an accurate pattern. The commonly used method uses a resist or photoresist to cover parts other than those to be etched, and when exposed to gas, the exposed parts react and fall off. In the dry etching method, a gas is decomposed using plasma to make a reactive material (F, Cl, Br) to perform a process.

Conventional dry etching equipment includes a process chamber, which is a closed reaction vessel having an object to be processed, a gas inlet for storing a reaction gas supplied to the process chamber and flowing into the process chamber, and a reaction gas flowing from the gas inlet in the process chamber. It is composed of a power supply and the like electrically connected to the inside of the process chamber to change into a plasma.

Etching equipment for manufacturing a semiconductor device is divided into a lead forming a top surface of the process additive body, and a reaction gas injection hole is formed in the center of the lead so that the reaction gas flows into the process chamber and is mounted on the chuck above the electrode located at the bottom of the process chamber. The plasma is formed on the upper surface of the wafer to perform etching. At this time, excited particles or radicals in the plasma move to the surface of the wafer and produce chemically-productable by-products, ie, polymers, through chemical reactions.

At this time, the produced polymers are exhausted by exhaust ports located at both sides of the electrode in the lower side of the process chamber, or deposited on the inner side of the process chamber. Therefore, the process chamber is periodically cleaned to remove the polymers deposited on the inner surface of the process chamber. In this process, the lid forming the upper surface of the process chamber is also separately cleaned in water.

The lid of the process chamber is equipped with a cap for supplying a reaction gas, a reaction gas injection hole, a heating block for heating the lead, a temperature sensor, a power supply unit, and an opening / closing handle. However, in this cleaning process, many inconveniences such as the delay of working time due to the disassembly and reassembly of the reed assembly after cleaning and the reduction of working efficiency, the wear of the screw due to frequent disassembly and assembly, and the increase of the leakage of the o-ring part are caused. Ham is following.

It is an object of the present invention to provide an etching apparatus for manufacturing a semiconductor device capable of efficiently cleaning a lead of a process chamber.

The technical problem of the present invention is not limited to the technical problem mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

Etching apparatus for manufacturing a semiconductor device of the present invention for achieving the above technical problem is a process chamber body, the lower lid to cover the upper portion of the process chamber body, the upper lid is located on the upper lid and the heating block for heating the lower lid mounted on the upper surface And a coupling means for coupling and fixing the upper lead and the upper lead and the lower lead.

Specific details of other embodiments are included in the following detailed description and drawings.

Advantages and features of the present invention, and methods of achieving the same will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various different forms, and only the present embodiments are provided to make the disclosure of the present invention complete and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Etching equipment for manufacturing a semiconductor device according to an embodiment of the present invention will be well understood by reference to the drawings.

1 is a structural diagram of an etching apparatus for manufacturing a semiconductor device according to an embodiment of the present invention. The etching apparatus 100 for manufacturing a semiconductor device is largely composed of a process chamber body 5 and a lid 11 covering and sealing an upper portion thereof.

Inside the process chamber body 5, an electrostatic chuck 1 for mounting the wafer W, an electrode 2, and an electrode housing 3 for supporting the electrode 2 are installed. ) Is wrapping.

The electrode 2 is provided below the electrostatic chuck 1, and a support pin (not shown) for mounting the wafer W is formed on the upper surface of the electrostatic chuck 1.

The liner 4 is separately installed on the sidewall of the electrode housing 3 to separately collect and discharge polymers generated in the etching process. The liner 4 is connected to a separate exhaust port (not shown) to discharge the polymer to the outside. In addition, the liner 4 can be attached and detached so that the liner 4 can be easily removed and cleaned when cleaning the lower surface of the process chamber body 5.

The upper part of the process chamber 100 is sealed by the lid 11. The upper part of the lid 11 is covered with a cap 9 having a reaction gas supply path 8, and the lid 11 itself is an upper lid. 11b) and the lower lid 11a.

The reaction gas passes through the reaction gas inlet 7 of the lid 11 through the reaction gas supply path 8 inside the cap 9 connected to a separate reaction gas supply unit (not shown), and then the process chamber body 5. It will flow into the inside of.

In addition, a wafer inlet 10 is formed at one side of the process chamber body 5 to allow the wafer W to enter and exit.

2 is an exploded perspective view exploded into an upper lid 11b and a lower lid 11a.

As mentioned above, the lid 11 is divided into an upper lid 11b and a lower lid 11a, and the upper lid 11b and the lower lid 11a are engaged and fixed by the coupling means 15. At this time, a variety of coupling means may be used in the present invention will be described as coupling using a screw.

On the upper surface of the upper lid 11b, a heating block 12 for heating, a temperature sensor 13, a power supply 14 for supplying power to the heating block 12, and a handle 16 for movement are attached. .

The heating block 12 is lowered at a predetermined temperature to prevent contamination on the wafer W by depositing polymers in the etching apparatus 100 for semiconductor device manufacturing during the etching process on the inner surface of the lower lid 11a. Four are provided in all directions for heating the lid 11a and the upper lid 11b. In addition, a separate power supply unit 14 for supplying power to the heating block 12 is also installed and connected to the heating block 12.

In the exemplary embodiment of the present invention, four heating blocks 12 are described, but the number of heating blocks 12 is not limited by the present invention.

The temperature sensor 13 is connected to a separate temperature controller (not shown) to measure and control the temperature.

3 is a cross-sectional view taken along the AA ′ direction of FIG. 2.

A reaction gas supply path 8 is formed in the cap 9 attached to the upper surface of the upper lead 11b, and the reaction gas supply path 8 is formed at the center of the upper lead 11b and the lower lead 11a. It is connected to the reaction gas inlet 7 to be mounted.

A plurality of holes (not shown) are formed in the reaction gas injection hole 7 to inject the reaction gas into the process chamber body 5 during the etching process.                     

Referring to the etching equipment for manufacturing a semiconductor device according to an embodiment of the present invention configured as described above are as follows.

First, the upper part of the process chamber body 5 is sealed with the lid 11 to which the cap 9 is attached.

Then, the wafer W moved by the robot to perform the etching process is introduced into the wafer inlet 10 to be seated on the electrostatic chuck (2).

The reaction gas for the etching process is supplied to the reaction gas injection hole 7 in the center of the lead 11 through the reaction gas supply path 8 connected to the reaction gas supply part (not shown), and into the process chamber body 5. The etching process is performed while spraying.

At this time, the lid 11 is heated to about 90 ° C. by the heating block 12 so that polymers generated during the etching process are deposited on the inner surface of the lower lid 11a, thereby preventing contamination of the wafer W due to the polymer. You can prevent it.

When cleaning after the etching process is completed, the inside of the process chamber body 5 is cleaned, and the liner 4 inside the process chamber body 5 is removed and cleaned to easily clean the lower portion of the process chamber body 5. Can be done.

The lower lid 11a is immersed in water to remove the Cl polymers attached to the inner surface. At this time, the heating block 12, the temperature sensor 13, the power supply 14, and the cap 9 are immersed. ) Is attached to the lower lid 11a to clean only the lower lid 11a.

In this way, by removing the lid 11 so that only the lower lid 11a can be cleaned, the lid 11 can be easily cleaned. This is done.

As described above with reference to the illustrated drawings of the etching equipment for manufacturing a semiconductor device according to the present invention, the present invention is not limited to the above embodiment can be manufactured in a variety of different forms, in the technical field to which the present invention belongs Those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive.

According to the etching apparatus for manufacturing a semiconductor device according to the embodiment of the present invention as described above has one or more of the following effects.

First, it is possible to reduce the loss of work time due to the disassembly and reassembly after cleaning the accessories such as the heating block, the temperature sensor, the power supply, and the like, thereby increasing work efficiency.

Second, it is possible to reduce or prevent the wear of the screw due to frequent disassembly and assembly of the lead appendages and the leakage of the attached o-ring portion.

Claims (5)

Process chamber body; A lower lid covering and sealing the upper portion of the process chamber body; An upper lead positioned above the lower lead and configured to mount a heating block for heating the lower lead on an upper surface thereof; And Etching equipment for manufacturing a semiconductor device comprising a coupling means for coupling and fixing the upper lead and the lower lead. The method of claim 1, And the upper lead includes a heating block for heating the lower lead, a power supply for supplying power to the heating block, and a temperature sensor for measuring a temperature on an upper surface thereof. The method of claim 1, Etching device for manufacturing a semiconductor device, characterized in that the coupling portion is a screw. The method of claim 1, Etching equipment for manufacturing a semiconductor device, characterized in that the upper lead and the lower lead is formed in the center of the reaction gas injection port in common. The method of claim 4, wherein Located on the upper surface of the upper lid, the etching apparatus for manufacturing a semiconductor device, characterized in that it further comprises a cap for supplying a reaction gas into the process chamber body through the reaction gas injection port.

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