KR20060022586A - Plasma display panel and method for manufacturing plasma display panel - Google Patents

Abstract

The present invention relates to a method of manufacturing a plasma display panel including a dielectric layer formed on a back glass substrate.

Forming a first partition wall material on the dielectric layer, forming a second partition wall material on the first partition wall, forming a photoresist on the second partition wall, exposing the photoresist using a mask, and exposing the photoresist. And developing a pattern, a first etching step of selectively etching the second partition wall, a second etching step of selectively etching the first partition wall, and a third etching step of selectively etching the second partition wall.

According to the present invention, the width of the black partition wall is narrower than the width of the white partition wall, thereby minimizing the size of the black partition wall exposed in the cell where visible light is generated, thereby minimizing absorption of visible light. Therefore, the reduction of luminous efficiency by the black partition wall was minimized.

In addition, by reducing the area of the black partition wall having a large dielectric constant, the dielectric constant was reduced to suppress an increase in capacitance. This reduces the power loss due to the displacement current required to charge the capacitance generated between the driving and the driving becomes easy.

Description

Plasma Display Panel and Method for Manufacturing Plasma Display Panel             

1 is a perspective view schematically showing a device structure of a conventional plasma display panel.

2 is a process diagram sequentially illustrating a manufacturing process of a conventional plasma display panel.

3 is a flowchart sequentially illustrating a manufacturing process of the plasma display panel of the present invention.

The present invention relates to a method of manufacturing a plasma display panel, and more particularly, to a method of manufacturing a plasma display panel including a partition wall.

In general, a plasma display panel has a partition wall formed between a front substrate and a rear substrate of soda-lime glass, forming one unit cell, and in each cell, helium-xenon (He-Xe) and helium-neon. When an inert gas such as (He-Ne) is discharged by a high frequency voltage, vacuum ultraviolet rays are generated to emit an image of the phosphor formed between the partition walls.

1 is a perspective view schematically showing a device structure of a conventional plasma display panel. As shown, the plasma display panel is coupled in parallel with the front panel including the front glass substrate 10 and the rear panel including the rear glass substrate 20 with a predetermined distance therebetween.

The front glass substrate 10 is made of a metal material and sustain electrodes 11 and 12 for maintaining light emission of cells by mutual discharge in one pixel below, that is, transparent electrodes 11a and 12a made of a transparent ITO material. The sustain electrodes 11 and 12 provided with the bus electrodes 11b and 12b are formed in pairs.

The sustain electrode pair includes a scan electrode 11 and a sustain electrode 12. The scan electrode 11 is mainly supplied with a scan signal for panel scanning and a sustain signal for discharging sustain, and the sustain electrode 12 The maintenance signal is mainly supplied.

The sustain electrodes 11 and 12 are covered by a dielectric layer 13a that limits the discharge current and insulates the electrode pairs, and magnesium oxide (MgO) is deposited on the top surface of the dielectric layer 13a to facilitate discharge conditions. The protective layer 14 is formed.

The rear glass substrate 20 has a plurality of discharge spaces, that is, at a portion where stripe-type (or well-type) partition walls 21 for forming cells are arranged in parallel and intersect with the sustain electrodes 11 and 12. A plurality of address electrodes 22, which perform address discharge to generate vacuum ultraviolet rays, are disposed in parallel with the partition wall 21.

In addition, a dielectric layer 13b is formed on an upper surface of the address electrode 22, and R, G, and B fluorescent layers 23 that emit visible light for image display during address discharge are coated on the upper surface of the dielectric layer.

After the front glass substrate 10 and the rear glass substrate 20 are plastically bonded by sealing the frit glass by sealing, a venting process for removing impurities in the panel is performed.

After the exhaust process, an inert gas such as helium (He), neon (Ne), xenon (Xe), or the like is injected into the plasma display panel in order to increase discharge efficiency during plasma discharge.

In the conventional discharge having such a structure, the address discharge between the address electrode 22 of the rear glass substrate 20 and the sustain electrodes 11 and 12 of the front glass substrate 10 is followed by continuous display discharge for the selected cell. .

In the discharge, the generated vacuum ultraviolet rays excite the phosphor to emit visible light, thereby obtaining a desired image.

The conventional plasma display panel having such a structure is largely formed through a glass substrate manufacturing process, a front panel manufacturing process, a rear panel manufacturing fixing, and an assembly process. In particular, the manufacturing process of the panel of the plasma display panel manufacturing process is as follows.

2 is a view showing a hole sequentially showing a manufacturing process of a conventional plasma display panel.

As shown in FIG. 2, in step (a), an address electrode 22 having a predetermined width and height is formed on the rear glass substrate 20 in the plasma display panel. In step (b), the address electrode is formed. (22) A dielectric layer 13b is formed on top.

In the step (c), the white partition wall 21a is formed on the dielectric layer 13b, and in the step (d), the black partition wall 21b is formed on the white partition wall 21a. In the step (e), the photoresist 30 is coated on the black partition wall 21b, and in the step (f), the photo mask 32 on which the predetermined pattern is formed is placed on the photoresist 30 and irradiated with light. The photoresist 30 is cured. This process is called an exposure process.

After the exposure process, (g) the uncured photoresist 30 is washed through the developing process, and then etched in step (h) to form the white barrier rib 21a and the black barrier rib 21b.

Thereafter, after drying, the white partition wall 21a and the black partition wall 21b are formed to prevent crosstalk between adjacent cells by firing.

Subsequently, in step (i), a fluorescent layer is formed between the white partition wall 21a and the black 21b partition wall, and the back glass substrate 20 is formed by firing.

On the other hand, as described above, the black barrier rib 21b structure having such a structure in the panel manufacturing process of the plasma display panel has the following problems.

First, since the black barrier rib 21b is directly exposed in a cell in which visible light is generated, unlike the white barrier rib, the black barrier rib absorbs visible light and lowers luminous efficiency.                         

Second, the black barrier rib 21b of a general material has a high dielectric constant, thereby increasing capacitance of the barrier rib and causing power loss.

Accordingly, the present invention is to solve the above problems, to make the width of the black partition wall narrower than the width of the white partition wall, to improve the image quality, to reduce the reflectance and to increase the luminous efficiency.

In addition, the present invention is to provide a plasma display panel and a manufacturing method of suppressing an increase in capacitance and reducing a loss of electric shock due to a displacement current used for charging.

In the method of manufacturing a plasma display panel comprising a dielectric layer formed on the rear glass substrate of the present invention for achieving the above object,

Forming a first partition wall material on the dielectric layer, forming a second partition wall material on the first partition wall, forming a photoresist on the second partition wall, exposing the photoresist using a mask, and exposing the photoresist. And developing a pattern, a first etching step of selectively etching the second barrier rib, a second etching step of selectively etching the first barrier rib, and a third etching step of selectively etching the second barrier rib. do.                     

In addition, the material of the black partition wall has a reflectance of 50% or less and is characterized by being nonconductive.

In addition, the black partition wall is formed by using a thin film method, it is characterized in that using one device of the sputter (Sputter), e-beam (E-beam) or CD (CVD).

In addition, the first and third etching steps and the second etching step are characterized by using a different type of etching solution (Etchant).

In addition, the first etching step is characterized in that the reactive ion etching (Reactive Ion Etching) method can be used.

In addition, the width of the upper surface of the black partition wall is characterized in that it is formed 10 ㎛ smaller than the width of the upper surface of the white partition wall.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

3 is a flowchart sequentially illustrating a manufacturing process of the plasma display panel according to the present invention.

As shown in order to form the white partition wall 21a and the black partition wall 21b of the present invention, in step (a), the address electrode 20 is formed in the upper portion of the rear glass substrate 20, and in step (b) The dielectric layer 13b is formed on the address electrode 22.

In the step (c), the white partition 21a is formed on the dielectric layer 13b. At this time, the material forming the white partition wall 21a and the material forming the black partition wall 21b use materials having different etching rates.                     

In the step (d), the black barrier rib 21b is formed on the white barrier rib 21a. At this time, the material of the black partition wall 21b has a reflectance of 50% or less, and is characterized by being non-conductive.

In addition, the black partition wall 21b is formed using a thin film method, and is formed using a device such as a sputter, an E-beam, or a CVD.

In the step (e), the photoresist 30 is coated on the black partition wall 21b, and in the step (f), the photo mask 32 on which the predetermined pattern is formed is placed on the photoresist 30 and irradiated with light. The photoresist 30 is cured. This process is called an exposure process. After the exposure process, (g) the uncured photoresist 30 is washed through the developing process.

In step (h), only the black partition wall 21b is selectively etched using the etching solution as the first etching step.

In addition, in the first etching step, the black partition wall 21b may be etched by using reactive ion etching.

Step (i) is a second etching step to selectively etch only the white partition wall (21a) using an etching solution different from the first etching step.

In step (j), in order to make the width of the black partition 21b smaller than the width of the upper surface of the white partition 21a as the third etching step, only the black partition 21b is selectively etched using an etching solution such as the first etching step. .

At this time, the etching uses wet etching, because it is easy to select only the desired material to match the composition or conditions of the etching solution when several kinds of materials are present at the same time.

Thus, through the first, second and third etching, the width of the upper surface of the black partition wall 21b is formed to be 10 μm smaller than the width of the upper surface of the white partition wall 21a.

Thereafter, after drying, the white partition wall 21a and the black partition wall 21b are formed to prevent crosstalk between adjacent cells by firing.

However, according to the related art, the black partition 21b is directly exposed in a cell in which visible light is generated, and thus, unlike the white partition wall, the visible light absorbs visible light and lowers the luminous efficiency.

In addition, the black barrier rib 21b of a general material has a high dielectric constant, thereby increasing capacitance of the barrier rib and causing power loss.

However, in the present invention, the width of the black partition wall is narrower than the width of the white partition wall, thereby reducing the size of the black partition wall 21b exposed in the cell where visible light is generated, thereby minimizing absorption of visible light. Therefore, the reduction of luminous efficiency by the black partition 21b was minimized.

In addition, by reducing the area of the black partition wall 21b having a large dielectric constant, the dielectric constant was reduced to suppress an increase in capacitance. This reduces the power loss due to the displacement current required to charge the capacitance generated between the driving and the driving becomes easier.

As described above, it will be understood by those skilled in the art that the technical configuration of the present invention may be implemented in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, the exemplary embodiments described above are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the following claims rather than the detailed description, and the meaning and scope of the claims and All changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

As described above, the present invention narrows the width of the black partition wall than the width of the white partition wall, thereby reducing the size of the black partition wall exposed in the cell in which the visible light is generated, thereby minimizing absorption of the visible light. Therefore, the reduction of luminous efficiency by the black partition wall was minimized.

In addition, by reducing the area of the black partition wall having a large dielectric constant, the dielectric constant was reduced to suppress an increase in capacitance. This reduces the power loss due to the displacement current required to charge the capacitance generated between the driving and the driving becomes easy.

Claims (9)

In the method of manufacturing a plasma display panel comprising a dielectric layer formed on a back glass substrate, Forming a first partition wall material on the dielectric layer; Forming a second partition wall material on the first partition wall; Forming a photoresist on the second partition wall; Exposing the photoresist using a mask; Developing a pattern formed through the exposure; A first etching step of selectively etching the second partition wall; A second etching step of selectively etching the first partition wall; And A third etching step of selectively etching the second partition wall Method of manufacturing a plasma display panel comprising a. The method of claim 1, And wherein the first partition is a white partition and the second partition is a black partition. The method of claim 2, The material of the black partition wall has a reflectivity of 50% or less. The method of claim 2, And the black barrier rib is non-conductive. The method of claim 2, And the black barrier rib is formed using a thin film method. The method of claim 5, wherein The thin film method is a method of manufacturing a plasma display panel, characterized in that using a device such as sputter, E-beam, or CVD (CVD). The method of claim 1, The first and third etching steps and the second etching step, the manufacturing method of the plasma display panel, characterized in that using a different type of etching (Etchant). The method of claim 2, The first etching step is a method of manufacturing a plasma display panel, characterized in that by using a reactive ion etching (Reactive Ion Etching) method. The method of claim 2, And a width of the upper surface of the black partition wall is 10 µm smaller than a width of the upper surface of the white partition wall.

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