KR20060011438A - Developing apparatus for manufacturing semiconductor and developing method thereof - Google Patents

Abstract

A developing device for manufacturing a semiconductor device is provided. The developing device for manufacturing a semiconductor device includes a chuck unit in which a semiconductor substrate is located, a nozzle unit for injecting a developer onto the semiconductor substrate, and a vacuum unit for removing a developer trapped in a nozzle included in the nozzle unit.

A developing method of a semiconductor device is also provided.

Developing process, vacuum part

Description

Developing apparatus for manufacturing semiconductor and developing method

1 is a cross-sectional view of a conventional developing device for manufacturing semiconductor elements.

2 is a cross-sectional view of a nozzle for explaining a problem of a conventional developing device for producing semiconductor elements.

3 is a cross-sectional view of a developing device for manufacturing a semiconductor device according to an embodiment of the present invention.

4 is a perspective view of a developing device for manufacturing a semiconductor device according to an embodiment of the present invention.

5 is a developing method of a semiconductor device according to an embodiment of the present invention.

(Explanation of symbols for the main parts of the drawing)

100: developing device for semiconductor manufacturing 110: bowl

120: chuck part 130: semiconductor substrate

140: nozzle portion 150: vacuum portion

152: second vacuum hole 154: second vacuum line

156: valve 158: second vacuum pump

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device and a developing method for manufacturing a semiconductor device, and more particularly, to a developing device and a developing method for manufacturing a semiconductor device, in which a developer trapped in a nozzle is removed after the developer is sucked back into the nozzle. It is about.

Photolithography is a process for forming a desired pattern on a semiconductor substrate. Apply a photoresist layer uniformly on the cleaned and dried semiconductor substrate, perform an exposure process according to a specific pattern on the photomask formed with a predetermined layout, and unnecessary portions of the exposed photoresist layer The process of forming the required pattern by removing this with a developing solution.

The development process of removing unnecessary portions of the exposed photoresist layer during the semiconductor photolithography process includes a stream method, a spray method, a multi stream / multi spray, and the like. A multi-stream / multi-spray method in which a plurality of spray nozzles are provided on a semiconductor substrate to supply a developer and sprays the developer is generally used.

1 is a cross-sectional view of a conventional developing device for manufacturing semiconductor elements.

Referring to FIG. 1, a conventional developing device 1 for manufacturing a semiconductor device includes a bowl 10, a chuck part 20, and a nozzle part 40. In addition, the nozzle unit 40 includes a developer supply pipe 41, a nozzle 42, and a support 43.                         

The chuck 20 is located inside the Paul 10 and can be rotated during the developing process so that the developer can be evenly applied to the semiconductor substrate 30 located on the chuck 20. The developer is supplied to the nozzle 42 through the developer supply pipe 41, and the developer is injected onto the semiconductor substrate 30 through the plurality of nozzles 42.

When the cylinder provided in the driving unit (not shown) is driven, the transfer arm (not shown) in which the nozzle unit 40 is positioned moves. The transfer arm (not shown) moves toward the center of the semiconductor substrate, and the developer is injected through the nozzle 42 while the chuck portion 20 rotates in a predetermined direction. After the injection of the developer is made, the transfer arm (not shown) returns to its original position. (Hereinafter, the first position where the nozzle unit 40 is located is referred to as the 'start position', and the position returning after the developer injection is completed is referred to as an 'end position'.)

2 is a cross-sectional view of the nozzle 42 for explaining the problem of the conventional developing device for manufacturing semiconductor elements.

Referring to FIG. 2, the development method of the conventional semiconductor device fabrication is schematically illustrated in FIG. 2 when the developing solution 43 is sucked back into the nozzle 42 after the first injection. Air 44 may flow into the nozzle 42. The introduced air 44 is trapped in the form of bubbles together with the developer 43 in the nozzle 42.

Therefore, when the developing process is performed again (second injection), bubbles together with the developing solution may invade the photoresist pattern formed on the semiconductor substrate, thereby causing photoresist pattern defects. This photoresist pattern defect is further exacerbated when the rot-back becomes unstable.                         

1 and 2, a developer is generally sprayed onto the semiconductor substrate 30 in the form of a parabola (A in FIG. 1). However, due to the developer 43b trapped in the first injection, the developer in the second injection is injected in a straight line (B in FIG. 1). Alternatively, the developing solutions from the plurality of nozzles 42 may overlap each other. In this case, the edge portion of the semiconductor substrate 30 is developed more times than other portions of the semiconductor substrate 30, so there is a problem of discoloration.

SUMMARY OF THE INVENTION An object of the present invention is to provide a developing device for manufacturing a semiconductor device which removes a developer trapped in a nozzle after the developer has been sucked back into the nozzle.

Another object of the present invention is to provide a developing method using the developing device for manufacturing a semiconductor device.

Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

The developing apparatus for manufacturing a semiconductor device according to an embodiment of the present invention for achieving the above technical problem is to remove the developer trapped in the nozzle included in the chuck portion, the nozzle portion for injecting the developer onto the semiconductor substrate, the nozzle unit It includes a vacuum unit.

According to another aspect of the present invention, there is provided a method of developing a semiconductor device, the method including loading a semiconductor substrate to a chuck, developing the loaded semiconductor substrate, and vacuuming the developer trapped in the nozzle. Inhaling and removing.

Other specific details of the invention are included in the detailed description and drawings.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

3 is a cross-sectional view of a developing device for manufacturing a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 3, a developing apparatus for manufacturing a semiconductor device according to an embodiment of the present invention includes a bowl 110, a chuck part 120, a nozzle unit 140, and a vacuum unit 150.

Paul 110 contains a developer having completed the development process at the bottom, the chuck 120, the nozzle 140 and the vacuum 150 is located therein. Preferably it comprises a discharge line (not shown) in which the developer is discharged.

The chuck 120 is located inside the Paul 110, and the first vacuum hole 122, the first vacuum releasing hole (not shown), the first vacuum line 124, and the first vacuum pump 128 are disposed. Include.

The chuck 120 is used to fix or transfer a wafer during a semiconductor device manufacturing process.

The chuck 120 includes a mechanical, electrostatic, and vacuum type. In one embodiment of the present invention, a vacuum chuck is used. Of course, other chucks can be used. The vacuum chuck unit 120 is configured to stably suck the wafer by using the pressure of the vacuum.

In the chuck 120, a plurality of first vacuum holes 122 and first vacuum releasing holes (not shown) are positioned at predetermined intervals. The first vacuum hole 122 and the first vacuum releasing hole (not shown) are connected to a plurality of first vacuum lines 124 passing through the inside of the vacuum chuck in a single region. The first vacuum line 124 is also connected to a first vacuum pump 128 that generates a vacuum pressure.

When the semiconductor substrate 130 is positioned on the chuck 120, a vacuum pump (not shown) operates. Air is sucked through the first vacuum line 124 and the first vacuum hole 122, and a vacuum region is formed between the chuck 120 and the semiconductor substrate 130. The semiconductor substrate 130 is adsorbed and fixed to the inner surface of the chuck portion 120 by the vacuum.

In addition, the chuck 120 may rotate during the developing process. Therefore, the developer may be evenly applied to the semiconductor substrate 130 positioned on the chuck 120.

The nozzle unit 140 includes a developer supply pipe 141, a nozzle 142, and a support 143.

The nozzle unit 140 supplies the developer to the nozzle 142 through the developer supply pipe 141. Preferably, the developer is sprayed onto the semiconductor substrate 130 through the plurality of nozzles 142. At this time, since the transfer arm (not shown) in which the nozzle unit is located moves toward the center of the semiconductor substrate 130, the transfer arm (not shown) may be evenly sprayed from the edge portion of the semiconductor substrate 130 to the center portion.

The vacuum unit 150 includes a second vacuum hole 152, a second vacuum releasing hole (not shown), a valve 156, and a second vacuum pump 158.

The vacuum unit 150 is mainly located at the inner wall of the Paul 110 and the central portion of the chuck 120. More specifically, the nozzle unit 140 is located below the start position and / or the end position.

A plurality of second vacuum holes 152 and second vacuum releasing holes (not shown) are positioned at the end of the vacuum unit 150 at a predetermined interval. The second vacuum hole 152 and the second vacuum releasing hole (not shown) are connected to a plurality of second vacuum lines 154 passing through the vacuum unit in a single region. The second vacuum line 154 is also connected to a second vacuum pump 158 that generates a vacuum pressure. In addition, the second vacuum line 154 has a valve 156 that can adjust the vacuum state.

The second vacuum pump 158 supplying the vacuum discharges gas molecules to the outside of the second vacuum pump 158 in the developing apparatus 100 for semiconductor manufacturing, and holds the inside of the second vacuum pump 158. All is possible.

The second vacuum pump 158 may be used separately from the first vacuum pump 128 used in the vacuum chuck 120. Preferably, the first vacuum pump 128 used in the vacuum chuck 120 is shared. In addition, in order to stably provide the vacuum, the second vacuum pump is designated only when the first vacuum pump 128 is designated as the main pump, the second vacuum pump 158 is designated as the preliminary pump, and the first vacuum pump 128 is abnormal. 158 may be activated.

The vacuum unit 150 may supply a vacuum to the second vacuum hole 152 and determine whether to supply the vacuum by using the valve 156. Preferably a solenoid valve is used. In addition, a sensor, a controller, or the like may be installed to automatically open or close the second vacuum line 154 between the second vacuum pump 158 and the second vacuum hole 152.

When the second vacuum pump 158 is operated, the air introduced through the second vacuum hole 152 and the trapped developer are introduced into the vacuum unit 150. Therefore, preferably, the storage solution may further include a storage unit (not shown) for storing the introduced developer.

4 is a perspective view of a developing device for manufacturing a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 4, the relative positions of the nozzle unit 140 and the vacuum unit 150 may be known. The vacuum unit 150 is located below the nozzle unit 140. Preferably, the second vacuum hole 152 of the vacuum unit 150 is positioned in line with the nozzle 142 at the start position and / or the end position. This is to facilitate the contact between the nozzle 142 of the nozzle unit 140 and the second vacuum hole 152 of the vacuum unit 150 to create a vacuum state.

In addition, preferably, the number of nozzles 142 and the number of second vacuum holes 152 are the same. Of course, the number of the second vacuum holes 152 may be less or more.

5 is a developing method of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 5, first, the semiconductor substrate 130 may be formed on the chuck portion 120 of the developing device 100 for manufacturing a semiconductor device including the vacuum portion 150 for removing the developer trapped by the nozzle 142. 130) (S210).

When the cylinder provided in the driving unit (not shown) is driven, the transfer arm (not shown) in which the nozzle unit 140 is positioned moves. The transfer arm (not shown) moves toward the center of the semiconductor substrate, and the developer is injected through the nozzle 42 while the chuck portion 20 rotates in a predetermined direction. After the secretion of the developer is made, the transfer arm (not shown) is developed by returning to the original position (S220).

When rotting-back into the nozzle 142 using the vacuum unit, the introduced air and trapped developer are removed (S230). That is, the nozzle 142 and the second vacuum hole 152 are first brought into contact with each other, and the valve 156 is opened. Thereafter, the second vacuum pump 158 is operated to remove the developer trapped in the nozzle 142.

Of course, the developer removal process S230 may be performed at the end position after the development S220 is completed, or may be performed at the start position before the development S220 is started.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

According to the developing device for manufacturing a semiconductor device as described above, there are one or more of the following effects.                     

First, the developing apparatus for manufacturing a semiconductor device according to an embodiment of the present invention may remove air and a developer trapped in a back-rotation nozzle.

Second, it is possible to prevent the occurrence of pattern defects on the semiconductor substrate. In addition, discoloration of the edge portion of the semiconductor substrate can be prevented.

Claims (5)

A chuck on which the semiconductor substrate is located; A nozzle unit for injecting a developer onto the semiconductor substrate; And And a vacuum unit for removing the developer trapped in the nozzle included in the nozzle unit. The developing device for manufacturing a semiconductor device according to claim 1, wherein the vacuum unit shares a vacuum pump used in a vacuum chuck unit. The developing apparatus of claim 1, wherein the vacuum unit is positioned below a start position and / or end position of a nozzle unit moving on the semiconductor substrate. (a) loading the semiconductor substrate into the chuck; (b) developing the loaded semiconductor substrate; And and (c) sucking and removing the developer trapped in the nozzle with a vacuum. The method of claim 3, wherein step (c) is performed before and / or after developing.

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