KR20060010605A - Vacuum chuck for semiconductor manufacturing - Google Patents

Vacuum chuck for semiconductor manufacturing Download PDF

Info

Publication number
KR20060010605A
KR20060010605A KR1020040059370A KR20040059370A KR20060010605A KR 20060010605 A KR20060010605 A KR 20060010605A KR 1020040059370 A KR1020040059370 A KR 1020040059370A KR 20040059370 A KR20040059370 A KR 20040059370A KR 20060010605 A KR20060010605 A KR 20060010605A
Authority
KR
South Korea
Prior art keywords
vacuum
semiconductor manufacturing
wafer
vacuum chuck
chuck
Prior art date
Application number
KR1020040059370A
Other languages
Korean (ko)
Inventor
진훤
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040059370A priority Critical patent/KR20060010605A/en
Publication of KR20060010605A publication Critical patent/KR20060010605A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

본 발명은 반도체 제조용 진공척에 관한 것으로, 본 발명에 따른 반도체 제조용 진공척은 몸체; 상기 몸체 내부에 형성되며 일단이 상기 몸체 외부의 진공펌프와 연결된 진공유로; 상기 몸체 상에 돌출 형성되며 웨이퍼가 안착되는 지지핀; 상기 진공유로와 연통되며 상기 지지핀의 내부를 관통하여 형성된 진공 흡착구를 구비한 것은 이러한 본 발명에 따른 반도체 제조용 진공척은 진공척의 진공흡착 구조를 개선하여 웨이퍼의 평탄도가 진공흡착력에 의하여 훼손되는 것을 방지하도록 하여 진공흡착에 의한 웨이퍼 평탄도 문제로 인한 공정 불량을 방지함으로써 반도체 제조효율을 보다 향상시키도록 하는 효과가 있다.The present invention relates to a vacuum chuck for semiconductor manufacturing, the vacuum chuck for semiconductor manufacturing according to the present invention is a body; A vacuum flow path formed in the body and having one end connected to a vacuum pump outside the body; A support pin protruding from the body and seating the wafer; The vacuum chuck for semiconductor manufacturing according to the present invention is provided with a vacuum suction hole formed in communication with the vacuum flow passage and penetrating the inside of the support pin, thereby improving the vacuum suction structure of the vacuum chuck and thus the flatness of the wafer is damaged by the vacuum suction force. It is possible to prevent the process defects caused by the problem of wafer flatness due to vacuum adsorption, thereby improving the semiconductor manufacturing efficiency.

Description

반도체 제조용 진공척{Vacuum chuck for semiconductor manufacturing}Vacuum chuck for semiconductor manufacturing

도 1은 종래의 반도체 제조용 진공척을 도시한 단면도이다.1 is a cross-sectional view showing a conventional vacuum chuck for semiconductor manufacturing.

도 2는 도 1의 A부 확대도이다.FIG. 2 is an enlarged view of a portion A of FIG. 1.

도 3은 본 발명에 따른 반도체 제조용 진공척을 도시한 평면도이다.3 is a plan view showing a vacuum chuck for semiconductor manufacturing according to the present invention.

도 4는 도 3의 I - I 선에 따른 단면도이다.4 is a cross-sectional view taken along line II of FIG. 3.

도 5는 도 3의 B부 확대도이다.5 is an enlarged view of a portion B of FIG. 3.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

100...진공척100 ... vacuum

110...몸체110 ... body

120...진공유로120 ...

130...지지핀130 ... support pin

131...진공 흡착구131 vacuum suction port

본 발명은 반도체 제조용 진공척에 관한 것으로, 더욱 상세하게는 웨이퍼의 진공 흡착시 진공 흡착력에 의하여 웨이퍼의 평탄도가 변형하는 것을 방지하도록 한 반도체 제조용 진공척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum chuck for semiconductor manufacturing, and more particularly, to a vacuum chuck for semiconductor manufacturing which prevents the flatness of the wafer from being deformed by the vacuum suction force during the vacuum adsorption of the wafer.

일반적으로 반도체 제조를 위한 각종 설비에는 웨이퍼가 안착되는 진공척이 마련된다. 이 진공척은 진공척의 바닥으로부터 진공 흡착력이 발생하여 상부에 안착된 웨이퍼를 흡착 지지하도록 한다.Generally, various facilities for manufacturing a semiconductor are provided with a vacuum chuck on which a wafer is seated. The vacuum chuck generates a vacuum suction force from the bottom of the vacuum chuck to adsorb and support the wafer seated thereon.

도 1에 도시된 바와 같이 종래의 반도체 제조용 진공척(10)은 진공척 몸체(11)와 이 몸체(111)의 상부면에 돌출 형성된 다수개의 지지핀(14)을 구비하고, 몸체(11)의 바닥에는 복수개의 진공 흡착구(13)가 형성되어 있다. 그리고 몸체(11)의 내부에는 이 진공 흡착구(13)들과 연통되어 몸체(11) 외부의 진공펌프와 연결되는 진공 흡착로(12)가 형성되어 있다. As shown in FIG. 1, a conventional vacuum chuck 10 for manufacturing a semiconductor includes a vacuum chuck body 11 and a plurality of support pins 14 protruding from an upper surface of the body 111, and a body 11. A plurality of vacuum suction ports 13 are formed at the bottom of the. In addition, a vacuum suction path 12 is formed inside the body 11 to communicate with the vacuum suction ports 13 and to be connected to a vacuum pump outside the body 11.

여기서 모든 지지핀(14)들 사이는 진공 흡착구(13)가 형성된 부분과 연통되어 있다. 즉 지지핀(14)은 몸체(11) 상에 서로 균일한 간격으로 이격되어 분포되어 있기 때문에 진공흡착력은 이들 지지핀(14)들 사이에서 발생하게 된다. Here, all the support pins 14 are in communication with the portion where the vacuum suction port 13 is formed. That is, since the support pins 14 are spaced apart from each other at uniform intervals on the body 11, the vacuum suction force is generated between these support pins 14.

그런데 종래의 진공척(10)의 경우 도 2에 도시된 바와 같이 웨이퍼(W)가 지지핀(14)에 의하여 부양된 상태에서, 진공 흡착력이 이들 지지핀(14)들이 지지하지 않은 부분으로 가해지기 때문에 웨이퍼(W)에 진공흡착력이 미치는 부분이 아주 미세하게라도 휘어질 수 있다. However, in the case of the conventional vacuum chuck 10, as shown in Figure 2 in the state in which the wafer (W) is supported by the support pin 14, the vacuum suction force is applied to the portion that these support pins 14 do not support Because of the loss, the portion where the vacuum adsorption force is exerted on the wafer W can be bent even very finely.

더욱이 반도체 제조공정의 경우 회로패턴이 매우 미세하기 때문에 미세한 휨에 의한 평탄도가 훼손되면 이후 반도체 제조공정에서 상당한 문제점을 유발할 수 있다. Furthermore, in the case of the semiconductor manufacturing process, since the circuit pattern is very fine, if the flatness due to the minute warpage is damaged, it may cause considerable problems in the semiconductor manufacturing process.

일예로 반도체 제조공정 중 노광설비에서도 진공척(10)이 사용된다. 이 노광 설비에서는 안착된 웨이퍼(W)를 진공 흡착한 상태로 얼라인먼트와 노광을 수행하게 된다. For example, the vacuum chuck 10 is also used in an exposure facility during a semiconductor manufacturing process. In this exposure facility, alignment and exposure are performed in a state in which the seated wafer W is vacuum-adsorbed.

노광공정의 경우 평탄도가 나쁘면 레티클의 이미지가 렌즈를 통과한 후 웨이퍼(W)에 노광될 때 초점 불량이 발생할 수 있고, 또한 다층 패턴의 오버레이 정도가 나쁘게 나타나 패턴 불량을 유발하여 반도체 제조효율을 떨어뜨리는 문제점이 발생한다. 그리고 그 외에 다른 반도체 제조공정에서도 이러한 평탄도의 훼손이 문제가 된다. In the case of the exposure process, if the flatness is poor, a poor focus may occur when the image of the reticle is exposed to the wafer W after passing through the lens, and the overlay degree of the multi-layered pattern is bad, causing a pattern defect, thereby improving semiconductor manufacturing efficiency Dropping problem occurs. In addition, the loss of flatness becomes a problem in other semiconductor manufacturing processes.

본 발명은 전술한 문제점을 해결하기 위한 것으로 본 발명의 목적은 진공척의 진공흡착 구조를 개선하여 웨이퍼의 평탄도가 진공흡착력에 의하여 훼손되는 것을 방지하도록 한 반도체 제조용 진공척을 제공하기 위한 것이다.An object of the present invention is to provide a vacuum chuck for semiconductor manufacturing to improve the vacuum suction structure of the vacuum chuck to prevent the flatness of the wafer from being damaged by the vacuum suction force.

전술한 목적을 달성하기 위한 본 발명에 따른 반도체 제조용 진공척은 몸체; 상기 몸체 내부에 형성되며 일단이 상기 몸체 외부의 진공펌프와 연결된 진공유로; 상기 몸체 상에 돌출 형성되며 웨이퍼가 안착되는 지지핀; 상기 진공유로와 연통되며 상기 지지핀의 내부를 관통하여 형성된 진공 흡착구를 구비한다.Vacuum chuck for semiconductor production according to the present invention for achieving the above object is a body; A vacuum flow path formed in the body and having one end connected to a vacuum pump outside the body; A support pin protruding from the body and seating the wafer; It is provided with a vacuum suction port in communication with the vacuum flow passage formed through the interior of the support pin.

그리고 바람직하게 상기 지지판은 상기 몸체 상에 복수개가 형성되고, 상기 진공 흡착구는 상기 지지핀마다 형성된다.And preferably, a plurality of the support plate is formed on the body, the vacuum suction port is formed for each of the support pins.

이하에서는 본 발명에 따른 반도체 제조용 진공척에 대한 바람직한 실시예를 도면을 참조하여 상세히 설명하기로 한다. 본 발명에 따른 반도체 제조용 진공척은 반도체 제조공정에서 웨이퍼가 진공 흡착으로 안착되는 대부분의 척에 적용될 수 있다.Hereinafter, a preferred embodiment of a vacuum chuck for semiconductor manufacturing according to the present invention will be described in detail with reference to the accompanying drawings. The vacuum chuck for semiconductor manufacturing according to the present invention can be applied to most chucks in which wafers are seated by vacuum adsorption in a semiconductor manufacturing process.

본 발명에 따른 반도체 제조용 진공척(100)은 도 3과 도 4에 도시된 바와 같이 원판형상의 몸체(110)를 구비하고, 몸체(110)의 상면에는 전체면에 걸쳐서 다수개의 지지핀(130)이 돌출 형성되어 있다. The vacuum chuck 100 for manufacturing a semiconductor according to the present invention includes a disc-shaped body 110 as shown in FIGS. 3 and 4, and a plurality of support pins 130 are disposed on the entire surface of the body 110 over the entire surface. ) Is formed to protrude.

그리고 몸체(110)의 내부에는 몸체(110)의 횡방향으로 연장되며, 중간부분이 하부로 개통된 진공유로(120)가 형성되고, 이 진공유로(120)의 하부 개통부분에는 외부의 진공펌프(미도시)가 연결되어 있다.And the inside of the body 110 extends in the transverse direction of the body 110, a vacuum flow path 120 is formed in which the middle portion is opened to the bottom, the lower opening of the vacuum flow path 120, the external vacuum pump (Not shown) is connected.

또한 각각의 지지핀(130)에는 상하로 관통 형성되어 진공유로(120)와 연통된 진공 흡착구(131)가 형성되어 있다. In addition, a vacuum suction port 131 is formed in each of the support pins 130 to penetrate up and down and communicate with the vacuum flow path 120.

여기서 몸체(110)의 진공유로(120)는 도면에 도시하지 않았지만, 몸체(110)를 상부체와 하부체로 별도 제작하고, 이들을 결합하여 형성할 수 있는데, 이때 상부체 또는 하부체의 일면에 홈을 형성하여 진공유로(120)를 형성할 수 있을 것이고, 또는 진공유로(120)를 몸체와 일체로도 형성할 수 있을 것이다.Although the vacuum flow path 120 of the body 110 is not shown in the drawing, the body 110 may be separately manufactured by the upper body and the lower body, and may be formed by combining them, in which case a groove is formed on one surface of the upper body or the lower body. By forming the vacuum flow path 120 may be formed, or the vacuum flow path 120 may be formed integrally with the body.

그리고 지지핀(130) 또한 몸체(110)와 일체로 형성하여 진공 흡착구(131)를 가공 형성할 수 있고, 또는 관형태의 지지핀(130)을 별도 제작하여 몸체(110)에 설치함으로써 실시할 수 있다. 그러나 이들 모든 실시예들을 반도체 제조용으로 사용하기 위하여 그 재질의 선택에 유의하여야 할 것이다.In addition, the support pin 130 may also be formed integrally with the body 110 to form a vacuum suction port 131, or may be manufactured by separately installing the support pin 130 having a tubular shape and installing it on the body 110. can do. However, care should be taken in the selection of the material for use in all these embodiments for semiconductor manufacturing.

이하에서는 전술한 바와 같이 구성된 본 발명에 따른 반도체 제조용 진공척에 대한 작용상태에 대하여 설명하기로 한다. Hereinafter will be described the operating state of the vacuum chuck for manufacturing a semiconductor according to the present invention configured as described above.                     

본 발명에 따른 반도체 제조용 진공척(100)은 도시되지 않은 진공펌프에 의하여 진공유로(120)에 진공 흡착력이 형성된다. 이러한 상태에서 외부의 이송장치에 의하여 웨이퍼(W)가 이송되어 지지핀(130) 상에 안착되면 웨이퍼(W)의 하부 안착면은 각각의 지지핀(140)에 형성된 진공 흡착구(131)로부터 진공 흡착력을 받게 되고, 이에 따른 웨이퍼(W)는 진공 흡착 상태로 진공척(100)의 몸체(110) 상에 안정되게 안착된다. In the vacuum chuck 100 for manufacturing a semiconductor according to the present invention, a vacuum suction force is formed in the vacuum flow path 120 by a vacuum pump (not shown). In this state, when the wafer W is transferred by an external transfer device and seated on the support pin 130, the lower seating surface of the wafer W is formed from the vacuum suction holes 131 formed on the respective support pins 140. The vacuum suction force is received, and thus the wafer W is stably seated on the body 110 of the vacuum chuck 100 in a vacuum suction state.

이때 웨이퍼(W)는 도 5에 도시된 바와 같이 각각의 지지핀(130)에 형성된 진공 흡착구(131)에 의하여 안착면이 흡착력을 받게 되므로 종래와 같이 지지핀(130)들 사이의 공간으로는 어떠한 외력도 받지 않는다. 따라서 웨이퍼(W)에 대한 휨이 발생하지 않는다.At this time, since the seating surface receives the suction force by the vacuum suction holes 131 formed in the respective support pins 130 as shown in FIG. 5, the wafer W is spaced between the support pins 130 as in the prior art. Does not receive any external force. Therefore, warping with respect to the wafer W does not occur.

그리고 노광공정을 수행할 경우 초점불량이나, 오버레이 불량이 발생하지 않게 되고, 또한 기타 다른 공정에서도 웨이퍼(W) 가공 공정 상 웨이퍼 평탄도의 문제에 의한 불량이 발생하는 것을 방지하게 된다.In addition, when the exposure process is performed, defects in focus and overlay do not occur, and in other processes, defects due to the problem of wafer flatness in the wafer W process may be prevented from occurring.

전술한 바와 같은 본 발명의 실시예 외에 각각의 구성요소들을 일부 변형하여 다르게 실시할 수 있을 것이다. 그러나 이들 실시예의 기본 구성요소가 본 발명의 필수구성요소들을 포함한다면 모두 본 발명의 기술적 범주에 포함된다고 보아야 한다.In addition to the above-described embodiment of the present invention, each component may be modified by some modifications. However, if the basic components of these embodiments include the essential components of the present invention all should be considered to be included in the technical scope of the present invention.

이상과 같은 본 발명에 따른 반도체 제조용 진공척은 진공척의 진공흡착 구조를 개선하여 웨이퍼의 평탄도가 진공흡착력에 의하여 훼손되는 것을 방지하도록 하여 진공흡착에 의한 웨이퍼 평탄도 문제로 인한 공정 불량을 방지함으로써 반도체 제조효율을 보다 향상시키도록 하는 효과가 있다.The vacuum chuck for semiconductor manufacturing according to the present invention as described above improves the vacuum adsorption structure of the vacuum chuck to prevent the flatness of the wafer from being damaged by the vacuum adsorption force, thereby preventing process defects due to the wafer flatness problem due to vacuum adsorption. There is an effect to further improve the semiconductor manufacturing efficiency.

Claims (2)

몸체;Body; 상기 몸체 내부에 형성되며 일단이 상기 몸체 외부의 진공펌프와 연결된 진공유로;A vacuum flow path formed in the body and having one end connected to a vacuum pump outside the body; 상기 몸체 상에 돌출 형성되며 웨이퍼가 안착되는 지지핀;A support pin protruding from the body and seating the wafer; 상기 진공유로와 연통되며 상기 지지핀의 내부를 관통하여 형성된 진공 흡착구를 구비한 것을 특징으로 하는 반도체 제조용 진공척.And a vacuum suction port communicating with the vacuum passage and formed through the inside of the support pin. 제 1항에 있어서, 상기 지지판은 상기 몸체 상에 복수개가 형성되고, 상기 진공 흡착구는 상기 지지핀마다 형성된 것을 특징으로 하는 반도체 제조용 진공척.The vacuum chuck of claim 1, wherein a plurality of the support plates are formed on the body, and the vacuum suction holes are formed for each of the support pins.
KR1020040059370A 2004-07-28 2004-07-28 Vacuum chuck for semiconductor manufacturing KR20060010605A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020040059370A KR20060010605A (en) 2004-07-28 2004-07-28 Vacuum chuck for semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040059370A KR20060010605A (en) 2004-07-28 2004-07-28 Vacuum chuck for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
KR20060010605A true KR20060010605A (en) 2006-02-02

Family

ID=37120906

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040059370A KR20060010605A (en) 2004-07-28 2004-07-28 Vacuum chuck for semiconductor manufacturing

Country Status (1)

Country Link
KR (1) KR20060010605A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9795918B2 (en) 2014-04-28 2017-10-24 Samsung Electronics Co., Ltd. Vacuum adsorption apparatus and a vacuum adsorption method of semiconductor package
KR20210052053A (en) * 2019-10-31 2021-05-10 세메스 주식회사 Supporting unit, a substrate processing apparatus including the same and a method using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9795918B2 (en) 2014-04-28 2017-10-24 Samsung Electronics Co., Ltd. Vacuum adsorption apparatus and a vacuum adsorption method of semiconductor package
KR20210052053A (en) * 2019-10-31 2021-05-10 세메스 주식회사 Supporting unit, a substrate processing apparatus including the same and a method using the same
US11524315B2 (en) 2019-10-31 2022-12-13 Semes Co., Ltd. Support unit, substrate treating apparatus including the same, and substrate treating method using the substrate treating apparatus

Similar Documents

Publication Publication Date Title
KR20200108892A (en) Splicing system and splicing method
JP2002217276A (en) Stage device
TWI761040B (en) Probe head and probe card comprising the same
US20060244276A1 (en) Wafer loading apparatus
JP2001127145A (en) Method and device for holding substrate with suction and exposing device and device manufacturing method using the device
KR20060010605A (en) Vacuum chuck for semiconductor manufacturing
US8142086B2 (en) Semiconductor manufacturing process
KR101965648B1 (en) Vacuum chuck
JPH07231033A (en) Board holder
KR20100029428A (en) Jig for teaching cassette indexer
KR20080047786A (en) Vacuum line apparatus of serial structure
US10304675B2 (en) System for integrating preceding steps and subsequent steps
JP2020113574A (en) Wafer transporting tray
KR102619677B1 (en) A two-piece electrode mounted in the chamber of an etching apparatus for semiconductors
KR200205150Y1 (en) Wafer Chuck of Semiconductor Exposure Equipment
CN220367894U (en) Integrated circuit packaging product operation device
KR20070020580A (en) Apparatus for supporting a substrate
KR20030061139A (en) Vacuum chuck
KR20090044578A (en) Apparatus for manufacturing semiconductor device and method using the same
KR20080030716A (en) Apparatus for supporting a substrate
KR20070025092A (en) Lift finger of wafer lift unit
KR20050109099A (en) Bowl of spin coater
KR20060120730A (en) Apparatus for supporting a semiconductor wafer
KR20060118970A (en) Chuck heater plate structure for use in semiconductor device fabricating equipment
KR200158363Y1 (en) Wafer chuck for preventing defocusing

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination