KR20060000678A - Method for patterning semiconductor device - Google Patents

Method for patterning semiconductor device Download PDF

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KR20060000678A
KR20060000678A KR1020040049615A KR20040049615A KR20060000678A KR 20060000678 A KR20060000678 A KR 20060000678A KR 1020040049615 A KR1020040049615 A KR 1020040049615A KR 20040049615 A KR20040049615 A KR 20040049615A KR 20060000678 A KR20060000678 A KR 20060000678A
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polysilicon layer
pattern
semiconductor device
oxide film
etched
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KR1020040049615A
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Korean (ko)
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KR100669552B1 (en
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복철규
임창문
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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Abstract

본 발명은 반도체 소자의 패터닝 방법에 관한 것으로써, 본 발명은 반도체 소자의 미세패턴을 형성하기 위해 리소그래피 노광 장비의 해상도를 향상시키는 것이 아니라, 소정 선폭의 폴리실리콘층 패턴을 먼저 형성하고 폴리실리콘층 패턴의 표면을 산화시켜 그 산화막을 식각 마스크로 사용하는 반도체 소자의 패터닝 방법이다. The present invention relates to a method of patterning a semiconductor device. The present invention does not improve the resolution of a lithography exposure apparatus to form a fine pattern of a semiconductor device, but first forms a polysilicon layer pattern having a predetermined line width and then forms a polysilicon layer. It is a patterning method of the semiconductor element which oxidizes the surface of a pattern and uses this oxide film as an etching mask.

Description

반도체 소자의 패터닝 방법{METHOD FOR PATTERNING SEMICONDUCTOR DEVICE}Patterning method of semiconductor device {METHOD FOR PATTERNING SEMICONDUCTOR DEVICE}

도 1a 내지 도 1c는 종래 기술에 따른 반도체 소자의 패터닝 방법을 도시한 단면도들.1A to 1C are cross-sectional views illustrating a method of patterning a semiconductor device according to the prior art.

도 2a 내지 도 2h는 본 발명에 따른 반도체 소자의 형성 방법을 도시한 단면도들.2A to 2H are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.

< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

10, 100 : 반도체 기판 20, 120 : 피식각층10, 100: semiconductor substrate 20, 120: etched layer

30, 130 : 폴리실리콘층 40, 140 : 감광막30, 130: polysilicon layer 40, 140: photosensitive film

135 : 산화막135: oxide film

본 발명은 반도체 소자의 패터닝 방법에 대한 것으로써, 특히 리소그래피(Lithography)를 이용한 반도체 소자의 미세패턴을 형성하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of patterning a semiconductor device, and more particularly, to a technique for forming a micropattern of a semiconductor device using lithography.

도 1a 내지 도 1c는 종래 기술에 따른 반도체 소자의 패터닝 방법을 도시한 단면도들이다. 1A to 1C are cross-sectional views illustrating a method of patterning a semiconductor device according to the prior art.                         

도 1a를 참조하면, 반도체 기판(10)의 피식각층(20) 상부에 폴리실리콘층(30)을 형성한다. 다음에는 폴리실리콘층(30) 상에 소정의 선폭을 갖는 감광막(40) 패턴을 형성한다. 이때, 감광막(40) 패턴은 미세패턴 마스크(미도시)를 이용한 노광 및 현상 공정으로 형성하는 것이 바람직하다.Referring to FIG. 1A, a polysilicon layer 30 is formed on the etched layer 20 of the semiconductor substrate 10. Next, a photosensitive film 40 pattern having a predetermined line width is formed on the polysilicon layer 30. In this case, the photoresist 40 pattern is preferably formed by an exposure and development process using a fine pattern mask (not shown).

도 1b를 참조하면, 감광막(40) 패턴을 마스크로 폴리실리콘층(30)을 식각하여 폴리실리콘층(30) 패턴을 형성하고, 감광막(40) 패턴을 제거한다.Referring to FIG. 1B, the polysilicon layer 30 is etched using the photosensitive film 40 pattern as a mask to form the polysilicon layer 30 pattern, and the photosensitive film 40 pattern is removed.

도 1c를 참조하면, 폴리실리콘층(30) 패턴을 마스크로 피식각층(20)을 식각하고, 폴리실리콘층(30)을 제거하여 반도체 기판(10) 상에 미세패턴을 완성한다.Referring to FIG. 1C, the etched layer 20 is etched using the polysilicon layer 30 pattern as a mask, and the polysilicon layer 30 is removed to complete a fine pattern on the semiconductor substrate 10.

종래 기술에 따른 반도체 소자의 패턴닝 방법에서는 리소그래피 기술이 중요한 역할을 한다. 미세패턴을 형성하기 위해서는 리소그래피 노광 장비의 해상도가 낮은 장비가 필요하다.Lithography techniques play an important role in the conventional method of patterning semiconductor devices. In order to form a fine pattern, a device having a low resolution of a lithographic exposure apparatus is required.

일반적으로 리소그래피 노광 장비의 해상도(Resolution)는 레일리(Rayleigh)식에 의해서 정의된다.In general, the resolution of lithographic exposure equipment is defined by Rayleigh equation.

Figure 112004028572192-PAT00001
Figure 112004028572192-PAT00001

여기서, R = 해상도(Resolution)Where R = Resolution

NA = 렌즈 개구수(Numerical Aperture)        NA = lens numerical aperture

k1 = 공정상수(Process Factor)        k1 = Process Factor

λ = 파장(Wavelength)         λ = Wavelength                         

상기 레일리(Rayleigh) 식에서 보이는 바와 같이, 해상도를 작게 하기 위한 가장 간단한 방법은 리소그래피 노광 장비의 렌즈 개구수(NA)를 증가시키거나, λ를 작게 하는 것이다. 이를 위해서는 노광 장비를 교체해야하는데, 신규 투자비용이 매우 비싸다는 문제점이 있다.As shown by the Rayleigh equation, the simplest way to reduce the resolution is to increase the lens numerical aperture (NA) of the lithographic exposure apparatus, or to decrease λ. To this end, the exposure equipment must be replaced, but the new investment is very expensive.

또한, 다른 방법으로 공정상수(Process Factor) k1을 작게 만드는 방법이 있다. 변형조명법(Off-axis illumination), 위상반전 마스크(Phase Shift Mask), 광학회절 보정법(Optical Proximity Correction)과 같은 기술을 이용하는 것이다. 그러나 이러한 방법 또한 신규 투자비용이 필요하고, 공정의 제어가 어렵기 때문에 반도체 생산 수율이 저하된다는 문제를 갖고 있다.Another method is to make the process factor k1 small. Techniques such as off-axis illumination, phase shift mask, and optical proximity correction are used. However, this method also has a problem that the yield of semiconductor production is lowered due to the need for new investment cost and difficult control of the process.

상술한 렌즈 개구수(NA), 노광 파장(λ) 및 공정상수(k1)을 바꾸는 방법들에 대한 비용 증가 및 수율 저하 문제를 해결한다 하더라도, 렌즈 개구수(NA)를 증가시키거나 노광 파장(λ)을 줄이는데 기술적인 한계가 있다. 따라서, 리소그래피 노광 공정은 근본적으로 해상도를 향상시키는데 한계를 가지고 있는 문제가 있다.Even if the above-mentioned methods of changing the lens numerical aperture (NA), the exposure wavelength (λ) and the process constant (k1) to solve the cost increase and yield reduction problems, the lens numerical aperture (NA) is increased or the exposure wavelength ( There is a technical limit to reducing λ). Therefore, the lithographic exposure process has a problem that there is a limit in fundamentally improving the resolution.

본 발명은 상기와 같은 문제점을 해결하기 위한 것으로, 본 발명은 반도체 소자의 미세패턴을 형성하기 위해 리소그래피 노광 장비의 해상도를 향상시키는 것이 아니라, 소정 선폭의 폴리실리콘층 패턴을 먼저 형성하고 폴리실리콘층 패턴의 표면을 산화시켜 그 산화막을 식각 마스크로 사용하는 반도체 소자의 패터닝 방법을 제공하는 것을 그 목적으로 한다. The present invention is to solve the above problems, the present invention does not improve the resolution of the lithography exposure equipment to form a fine pattern of the semiconductor device, but first to form a polysilicon layer pattern of a predetermined line width and then the polysilicon layer It is an object of the present invention to provide a method for patterning a semiconductor device in which the surface of the pattern is oxidized and the oxide film is used as an etching mask.

본 발명은 상기와 같은 목적을 달성하기 위한 것으로서, 피식각층 상부에 폴리실리콘층을 형성하는 단계와, 상기 폴리실리콘층 상에 소정의 선폭을 갖는 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 리플로우하여 상기 선폭을 증가시키는 단계와, 상기 감광막 패턴을 마스크로 폴리실리콘층을 식각하여 폴리실리콘층 패턴을 형성하고, 상기 감광막 패턴을 제거하는 단계와, 상기 폴리실리콘층 패턴의 표면을 산화시켜 상부면 및 측벽에 산화막을 형성하는 단계와, 상기 폴리실리콘층 패턴 상부면의 산화막을 제거하는 단계와, 상기 폴리실리콘층 패턴의 산화되지 않은 부분을 제거하는 단계와, 상기 잔존하는 산화막을 식각 마스크로 상기 피식각층을 식각하는 단계 및 상기 잔존하는 산화막을 제거하는 단계를 포함하는 것을 특징으로 한다.According to an aspect of the present invention, a polysilicon layer is formed on an etched layer, a photoresist pattern having a predetermined line width is formed on the polysilicon layer, and the photoresist pattern is rippled. Increasing the line width, etching the polysilicon layer using the photoresist pattern as a mask to form a polysilicon layer pattern, removing the photoresist pattern, and oxidizing a surface of the polysilicon layer pattern Forming an oxide film on surfaces and sidewalls, removing an oxide film on an upper surface of the polysilicon layer pattern, removing an unoxidized portion of the polysilicon layer pattern, and using the remaining oxide film as an etching mask. And etching the etching target layer and removing the remaining oxide layer.

이하, 첨부된 도면을 참조하여 본 발명에 따른 반도체 소자의 패터닝 방법에 관하여 상세히 설명하면 다음과 같다.Hereinafter, a method of patterning a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

도 2a 내지 도 2h는 본 발명에 따른 반도체 소자의 형성 방법을 도시한 단면도들이다.2A to 2H are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.

도 2a를 참조하면, 반도체 기판(100)의 피식각층(120) 상부에 폴리실리콘층(130)을 형성하고, 폴리실리콘층(130) 상에 소정의 선폭을 갖는 감광막(140) 패턴을 형성한다.Referring to FIG. 2A, a polysilicon layer 130 is formed on the etched layer 120 of the semiconductor substrate 100, and a photosensitive film 140 pattern having a predetermined line width is formed on the polysilicon layer 130. .

도 2b를 참조하면, 감광막(140) 패턴을 리플로우하여 상기 선폭(CD)을 증가시킨다. 이때, 리플로우하는 공정은 100 내지 150℃의 온도 범위에서 90초간 핫 플레이트 오븐(Hot Plate Oven)에서 수행하는 베이크 공정인 것이 바람직하다. Referring to FIG. 2B, the line width CD is increased by reflowing the photoresist 140 pattern. In this case, the reflowing process is preferably a baking process performed in a hot plate oven for 90 seconds in a temperature range of 100 to 150 ° C.                     

도 2c를 참조하면, 리플로우된 감광막(140) 패턴을 마스크로 폴리실리콘층(130)을 식각하여 폴리실리콘층(130) 패턴을 형성하고, 감광막(140) 패턴을 제거한다.Referring to FIG. 2C, the polysilicon layer 130 is etched using the reflowed photoresist 140 pattern as a mask to form the polysilicon layer 130, and the photoresist 140 pattern is removed.

도 2d를 참조하면, 폴리실리콘층(130) 패턴의 표면을 산화시켜 상부면 및 측벽에 산화막(135)을 형성한다.Referring to FIG. 2D, the surface of the polysilicon layer 130 pattern is oxidized to form an oxide film 135 on the top and sidewalls.

도 2e를 참조하면, 폴리실리콘층(130) 패턴 상부 면의 산화막(135)을 제거한다. 이때, 산화막은 C4F8, C4F6 또는 C5F8 플라즈마 가스를 이용한 식각하는 것이 바람직하다. 또한, 산화막의 두께에 의해서 미세패턴의 크기가 결정된다.Referring to FIG. 2E, the oxide layer 135 on the upper surface of the polysilicon layer 130 pattern is removed. At this time, the oxide film is preferably etched using C 4 F 8 , C 4 F 6 or C 5 F 8 plasma gas. In addition, the size of the fine pattern is determined by the thickness of the oxide film.

도 2f를 참조하면, 폴리실리콘층(130) 패턴의 산화되지 않은 부분을 제거한다. 이때, 폴리실리콘층(130) 패턴의 산화되지 않은 부분은 HBr/Cl2 플라즈마 가스를 이용한 식각공정으로 제거하는 것이 바람직하다.Referring to FIG. 2F, the non-oxidized portion of the polysilicon layer 130 pattern is removed. In this case, the non-oxidized portion of the polysilicon layer 130 pattern may be removed by an etching process using HBr / Cl 2 plasma gas.

도 2g를 참조하면, 잔존하는 산화막(135)을 식각 마스크로 상기 피식각층(120)을 식각한다. 이때, 산화막은 플라즈마 가스에 대한 마스크로 작용한다. 산화된 하드 마스크는 종래의 폴리실리콘층(130)보다 식각선택비가 높기 때문에 피식각층(120)의 미세패턴을 수직한 모양으로 식각할 수 있다.Referring to FIG. 2G, the etching target layer 120 is etched using the remaining oxide layer 135 as an etching mask. At this time, the oxide film serves as a mask for the plasma gas. Since the oxidized hard mask has an etching selectivity higher than that of the conventional polysilicon layer 130, the micro pattern of the etched layer 120 may be etched in a vertical shape.

도 2h를 참조하면, 잔존하는 산화막을 제거한다.Referring to FIG. 2H, the remaining oxide film is removed.

이상에서 설명한 바와 같이, 본 발명은 반도체 소자 피식각 패턴의 크기가 리소그래피 노광 장비의 렌즈 개구수(NA), 노광 파장(λ) 및 공정상수(k1)에 의해 결정되는 것이 아니라, 산화막의 두께에 의해 결정된다. 따라서, 리소그래피 노광 장비의 근본적인 한계를 극복할 수 있다. 또한 신규 장비 투자에 대한 비용을 감소시킬 수 있고, 향상된 공정마진을 확보하여 반도체 생산 수율을 높일 수 있는 효과가 있다.As described above, in the present invention, the size of the semiconductor element etched pattern is not determined by the lens numerical aperture (NA), the exposure wavelength (λ), and the process constant (k1) of the lithographic exposure apparatus, but the thickness of the oxide film. Is determined by Thus, the fundamental limitations of lithographic exposure equipment can be overcome. In addition, it is possible to reduce the cost of new equipment investment and to increase the yield of semiconductor production by securing an improved process margin.

Claims (4)

피식각층 상부에 폴리실리콘층을 형성하는 단계;Forming a polysilicon layer on the etched layer; 상기 폴리실리콘층 상에 소정의 선폭을 갖는 감광막 패턴을 형성하는 단계;Forming a photoresist pattern having a predetermined line width on the polysilicon layer; 상기 감광막 패턴을 리플로우하여 상기 선폭을 증가시키는 단계;Reflowing the photoresist pattern to increase the line width; 상기 감광막 패턴을 마스크로 폴리실리콘층을 식각하여 폴리실리콘층 패턴을 형성하고, 상기 감광막 패턴을 제거하는 단계;Etching the polysilicon layer using the photoresist pattern as a mask to form a polysilicon layer pattern, and removing the photoresist pattern; 상기 폴리실리콘층 패턴의 표면을 산화시켜 상부면 및 측벽에 산화막을 형성하는 단계;Oxidizing a surface of the polysilicon layer pattern to form an oxide film on an upper surface and a sidewall; 상기 폴리실리콘층 패턴 상부면의 산화막을 제거하는 단계;Removing an oxide film on an upper surface of the polysilicon layer pattern; 상기 폴리실리콘층 패턴의 산화되지 않은 부분을 제거하는 단계;Removing an unoxidized portion of the polysilicon layer pattern; 상기 잔존하는 산화막을 식각 마스크로 상기 피식각층을 식각하는 단계; 및Etching the etched layer using the remaining oxide film as an etch mask; And 상기 잔존하는 산화막을 제거하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 패터닝 방법.Removing the remaining oxide film; and patterning the semiconductor device. 제 1항에 있어서,The method of claim 1, 상기 감광막 패턴을 리플로우하는 공정은 100 내지 150℃의 온도 범위에서 90초간 핫 플레이트 오븐(Hot Plate Oven)에서 수행하는 베이크 공정인 것을 특징으로 하는 반도체 소자의 패터닝 방법.The process of reflowing the photoresist pattern is a baking process performed in a hot plate oven (Hot Plate Oven) for 90 seconds in a temperature range of 100 to 150 ℃. 제 1항에 있어서,The method of claim 1, 상기 폴리실리콘층 패턴의 산화되지 않은 부분을 제거하는 단계는 HBr/Cl2 플라즈마 가스를 이용한 식각공정인 것을 특징으로 하는 반도체 소자의 형성방법.Removing the non-oxidized portion of the polysilicon layer pattern is an etching process using HBr / Cl 2 plasma gas. 제 1항에 있어서,The method of claim 1, 상기 폴리실리콘층 패턴 상부면의 산화막을 제거하는 단계는 C4F8, C4F 6 또는 C5F8 플라즈마 가스를 이용한 식각공정인 것을 특징으로 하는 반도체 소자의 형성 방법.The removing of the oxide layer on the upper surface of the polysilicon layer pattern is a method of forming a semiconductor device, characterized in that the etching process using a C 4 F 8 , C 4 F 6 or C 5 F 8 plasma gas.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100816210B1 (en) * 2006-08-24 2008-03-21 동부일렉트로닉스 주식회사 Method of fabricating semiconductor devices
US7655573B2 (en) 2006-08-02 2010-02-02 Hynix Semiconductor Inc. Method of forming a mask pattern
US7687369B2 (en) 2007-02-16 2010-03-30 Samsung Electronics Co., Ltd. Method of forming fine metal patterns for a semiconductor device using a damascene process
US7892982B2 (en) 2006-03-06 2011-02-22 Samsung Electronics Co., Ltd. Method for forming fine patterns of a semiconductor device using a double patterning process
US7998874B2 (en) 2006-03-06 2011-08-16 Samsung Electronics Co., Ltd. Method for forming hard mask patterns having a fine pitch and method for forming a semiconductor device using the same
KR101146588B1 (en) * 2006-08-11 2012-05-16 삼성전자주식회사 Manufacturing method of fin structure and fin transistor adopting the fin structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892982B2 (en) 2006-03-06 2011-02-22 Samsung Electronics Co., Ltd. Method for forming fine patterns of a semiconductor device using a double patterning process
US7998874B2 (en) 2006-03-06 2011-08-16 Samsung Electronics Co., Ltd. Method for forming hard mask patterns having a fine pitch and method for forming a semiconductor device using the same
US7655573B2 (en) 2006-08-02 2010-02-02 Hynix Semiconductor Inc. Method of forming a mask pattern
KR101146588B1 (en) * 2006-08-11 2012-05-16 삼성전자주식회사 Manufacturing method of fin structure and fin transistor adopting the fin structure
KR100816210B1 (en) * 2006-08-24 2008-03-21 동부일렉트로닉스 주식회사 Method of fabricating semiconductor devices
US7687369B2 (en) 2007-02-16 2010-03-30 Samsung Electronics Co., Ltd. Method of forming fine metal patterns for a semiconductor device using a damascene process

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