KR20050078158A - 자기 저항 소자 - Google Patents
자기 저항 소자 Download PDFInfo
- Publication number
- KR20050078158A KR20050078158A KR1020040006464A KR20040006464A KR20050078158A KR 20050078158 A KR20050078158 A KR 20050078158A KR 1020040006464 A KR1020040006464 A KR 1020040006464A KR 20040006464 A KR20040006464 A KR 20040006464A KR 20050078158 A KR20050078158 A KR 20050078158A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- intermetallic compound
- magnetoresistive element
- free layer
- present
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65B—MACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
- B65B33/00—Packaging articles by applying removable, e.g. strippable, coatings
- B65B33/02—Packaging small articles, e.g. spare parts for machines or engines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/0004—Component parts, details or accessories; Auxiliary operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
- B29C63/02—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor using sheet or web-like material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 순차적으로 형성된 고정화층, 고정층, 비자성층 및 자유층을 포함하는 자기 저항 소자에 있어서,상기 자유층이 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 1항에 있어서,상기 고정층이 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 2항에 있어서,상기 고정화층이 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 1항에 있어서,상기 고정화층이 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 1항 내지 제 4항중 어느 한 항에 있어서,상기 금속간 화합물은 X2YZ의 일반 구조식을 지니며, 여기서 X는 Co 또는 Cu계열의 금속 중에서 선택되며, Y는 Mn, V, Ti, Ni, Hf 중에서 선택되며, Z는 3A족 또는 4A족 물질로서 Al, Si, Ga, Ge Sn 또는 Sb 등의 비자성체 중에서 선태되는 것을 특징으로 하는 자기 저항 소자.
- 제 1항 내지 제 4항중 어느 한 항에 있어서,상기 금속간 화합물은 PtMnSb, NiMnSb, CuMnSb, PdMnSb, PtFeSb, PtCrSb 또는 PhMnSb 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 자기 저항 소자.
- 고정화층, 고정층, 비자성층 및 자유층이 순차적으로 형성된 자기 저항 소자에 있어서,상기 고정층이 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 7항에 있어서,상기 고정화층은 금속간 화합물로 형성된 것을 특징으로 하는 자기 저항 소자.
- 제 7항에 있어서,상기 금속간 화합물은 X2YZ의 일반 구조식을 지니며, 여기서 X는 Co 또는 Cu계열의 금속 중에서 선택되며, Y는 Mn, V, Ti, Ni, Hf 중에서 선택되며, Z는 3A족 또는 4A족 물질로서 Al, Si, Ga, Ge Sn 또는 Sb 등의 비자성체 중에서 선태되는 것을 특징으로 하는 자기 저항 소자.
- 제 7항에 있어서,상기 금속간 화합물은 PtMnSb, NiMnSb, CuMnSb, PdMnSb, PtFeSb, PtCrSb 또는 PhMnSb 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 자기 저항 소자.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040006464A KR100624417B1 (ko) | 2004-01-31 | 2004-01-31 | 터널링 자기 저항 소자 |
EP05250361A EP1560231A3 (en) | 2004-01-31 | 2005-01-25 | Magnetic resistance device |
JP2005021557A JP2005217422A (ja) | 2004-01-31 | 2005-01-28 | 磁気抵抗素子 |
US11/045,106 US7554774B2 (en) | 2004-01-31 | 2005-01-31 | Magnetic resistance device and method of manufacturing the same |
CNA2005100064131A CN1649028A (zh) | 2004-01-31 | 2005-01-31 | 磁阻器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040006464A KR100624417B1 (ko) | 2004-01-31 | 2004-01-31 | 터널링 자기 저항 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050078158A true KR20050078158A (ko) | 2005-08-04 |
KR100624417B1 KR100624417B1 (ko) | 2006-09-18 |
Family
ID=34651543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040006464A KR100624417B1 (ko) | 2004-01-31 | 2004-01-31 | 터널링 자기 저항 소자 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7554774B2 (ko) |
EP (1) | EP1560231A3 (ko) |
JP (1) | JP2005217422A (ko) |
KR (1) | KR100624417B1 (ko) |
CN (1) | CN1649028A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210010876A (ko) * | 2018-05-15 | 2021-01-28 | 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. | 희토류 무 금속 경질 자석 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007013887A2 (en) * | 2004-10-15 | 2007-02-01 | The Trustees Of Columbia University In The City Of New York | Methods of manipulating the relaxation rate in magnetic materials and devices for using the same |
JP2006278386A (ja) * | 2005-03-28 | 2006-10-12 | Alps Electric Co Ltd | 磁気検出素子 |
JP2008252018A (ja) * | 2007-03-30 | 2008-10-16 | Toshiba Corp | 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ |
US7957106B2 (en) * | 2007-04-30 | 2011-06-07 | Hitachi Global Storage Technologies Netherlands, B.V. | Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element |
WO2011071009A1 (ja) | 2009-12-08 | 2011-06-16 | 日本電気株式会社 | 電気化学反応を利用した抵抗変化素子及びその製造方法 |
CN102315255B (zh) * | 2010-07-07 | 2013-10-16 | 中国科学院物理研究所 | 一种自旋场效应晶体管及其磁性存储器 |
US9728238B2 (en) | 2011-12-19 | 2017-08-08 | Intel Corporation | Spin transfer torque memory (STTM) device with half-metal and method to write and read the device |
US9558767B2 (en) * | 2013-04-05 | 2017-01-31 | National Institute For Materials Science | Current-perpendicular-to-plane magneto-resistance effect element |
CN105609630A (zh) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | 一种铁磁-反铁磁薄膜异质结构、制备方法及磁存储设备 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4803660A (en) * | 1986-02-28 | 1989-02-07 | Kabushiki Kaisha Toshiba | Optical recording medium |
JP2924798B2 (ja) * | 1996-07-12 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果薄膜 |
US5793279A (en) * | 1996-08-26 | 1998-08-11 | Read-Rite Corporation | Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
JP3050189B2 (ja) * | 1997-10-30 | 2000-06-12 | 日本電気株式会社 | 磁気抵抗効果素子及びその製造方法 |
US6436526B1 (en) * | 1999-06-17 | 2002-08-20 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell |
JP2002050011A (ja) * | 2000-08-03 | 2002-02-15 | Nec Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム |
US6771473B2 (en) * | 2001-01-22 | 2004-08-03 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive element and method for producing the same |
EP1382046B1 (de) * | 2001-02-23 | 2011-11-02 | International Business Machines Corporation | Verbindungen mit riesenmagnetwiderstand und spinpolarisiertem tunneln, ihre herstellung und verwendung |
JP3576111B2 (ja) * | 2001-03-12 | 2004-10-13 | 株式会社東芝 | 磁気抵抗効果素子 |
JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
US7023670B2 (en) * | 2001-11-19 | 2006-04-04 | Alps Electric Co., Ltd. | Magnetic sensing element with in-stack biasing using ferromagnetic sublayers |
JP3607678B2 (ja) * | 2002-01-24 | 2005-01-05 | アルプス電気株式会社 | 磁気検出素子 |
JP4281285B2 (ja) * | 2002-03-14 | 2009-06-17 | ソニー株式会社 | トンネル磁気抵抗効果素子及び磁気メモリ装置 |
US6756237B2 (en) * | 2002-03-25 | 2004-06-29 | Brown University Research Foundation | Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices |
JP4487472B2 (ja) * | 2002-07-05 | 2010-06-23 | 株式会社日立製作所 | 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ |
KR100663857B1 (ko) * | 2002-12-13 | 2007-01-02 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 스핀 주입 디바이스 및 이를 사용한 자기 장치, 그리고이들에 사용되는 자성 박막 |
US7158353B2 (en) * | 2003-11-06 | 2007-01-02 | Seagate Technology Llc | Magnetoresistive sensor having specular sidewall layers |
US7450327B2 (en) * | 2004-09-30 | 2008-11-11 | Intematix Corporation | Coherent spin valve and related devices |
-
2004
- 2004-01-31 KR KR1020040006464A patent/KR100624417B1/ko active IP Right Grant
-
2005
- 2005-01-25 EP EP05250361A patent/EP1560231A3/en not_active Withdrawn
- 2005-01-28 JP JP2005021557A patent/JP2005217422A/ja not_active Withdrawn
- 2005-01-31 US US11/045,106 patent/US7554774B2/en active Active
- 2005-01-31 CN CNA2005100064131A patent/CN1649028A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210010876A (ko) * | 2018-05-15 | 2021-01-28 | 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. | 희토류 무 금속 경질 자석 |
Also Published As
Publication number | Publication date |
---|---|
EP1560231A2 (en) | 2005-08-03 |
JP2005217422A (ja) | 2005-08-11 |
US7554774B2 (en) | 2009-06-30 |
KR100624417B1 (ko) | 2006-09-18 |
US20050168882A1 (en) | 2005-08-04 |
CN1649028A (zh) | 2005-08-03 |
EP1560231A3 (en) | 2006-05-31 |
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