KR20050075581A - Production process of quartz stamp of nano imprint - Google Patents

Production process of quartz stamp of nano imprint Download PDF

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KR20050075581A
KR20050075581A KR1020040003395A KR20040003395A KR20050075581A KR 20050075581 A KR20050075581 A KR 20050075581A KR 1020040003395 A KR1020040003395 A KR 1020040003395A KR 20040003395 A KR20040003395 A KR 20040003395A KR 20050075581 A KR20050075581 A KR 20050075581A
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quartz
etching
stamp
silicon nitride
photosensitive material
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박주도
이기동
이성은
윤상수
김진성
안세원
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엘지전자 주식회사
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    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract

본 발명은 나도 임프린트용 쿼츠(quartz) 스템프 제작 방법에 관한 것으로서, 본 발명에 따른 나노 임프린트용 쿼츠 스템프 제작 방법은, 쿼츠 기판 위에 질화실리콘(Si3N4)을 증착하는 단계; 상기 질화실리콘(Si3N4)위에 감광성 물질을 코팅하는 단계; 상기 감광성 물질을 레이저 간섭 리쏘그라피 방식을 이용해 패터닝하는 단계; 상기 감광성 물질을 마스크로 하여 질화실리콘(Si3N4)을 식각하는 단계; 상기 감광성 물질을 제거한 후, 질화실리콘(Si3N4) 위에 폴리실리콘(Poly-Si)을 증착하는 단계; 상기 질화실리콘(Si3N4)부분까지 폴리실리콘(Poly-Si)을 식각하는 단계; 상기 질화실리콘(Si3N4)을 에칭용액인 인산(H3PO4)로 식각하여 제거하는 단계; 상기 폴리실리콘(Poly-Si)을 마스크로 하여 쿼츠를 식각하는 단계; 상기 폴리실리콘(Poly-Si) 마스크를 제거하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a quartz stamp fabrication method for imprinting, wherein the quartz stamp fabrication method for nanoimprint according to the present invention comprises the steps of: depositing silicon nitride (Si3N4) on a quartz substrate; Coating a photosensitive material on the silicon nitride (Si 3 N 4); Patterning the photosensitive material using laser interference lithography; Etching silicon nitride (Si 3 N 4) using the photosensitive material as a mask; Removing the photosensitive material and then depositing poly-Si on silicon nitride (Si 3 N 4); Etching polysilicon up to the silicon nitride (Si 3 N 4) portion; Etching and removing the silicon nitride (Si 3 N 4) with phosphoric acid (H 3 PO 4) as an etching solution; Etching quartz using the poly-silicon as a mask; It characterized in that it comprises a step of removing the poly-silicon (Poly-Si) mask.

본 발명은 쿼츠 스탬프를 열경화 방식의 임프린트 기법과 자외선 경화 방식의 임프린트 기법 모두에 사용할 수 있는 효과가 있다.The present invention has an effect that the quartz stamp can be used for both the thermosetting imprint technique and the ultraviolet curing imprint technique.

그리고, 쿼츠 재질의 스템프를 저비용으로 대면적에 걸쳐 쉽게 제작할 수 있는 효과가 있다.And, there is an effect that can be easily produced over a large area of quartz stamp at a low cost.

Description

나노 임프린트용 쿼츠 스템프 제작 방법{production process of quartz stamp of nano imprint}Production process of quartz stamp of nano imprint}

본 발명은 나도 임프린트용 쿼츠(quartz) 스템프 제작 방법에 관한 것이다.The present invention also relates to a method for manufacturing a quartz stamp for imprint.

나노 임프린트 기술은 1990년 대 중반 미국 Princeton 대학교의 Stephen Y. Chou 교수에 의해 도입된 나노 소자 제작 방법으로, 낮은 생산성을 갖는 전자빔 리쏘그라피나 고가의 광학 리쏘그라피를 대신할 기술로 주목받고 있다. 나노 임프린트 기술은 컴팩트 디스크(CD)와 같은 마이크로 스케일의 패턴을 갖는 고분자 소재 제품의 대량 생산에 사용되는 엠보싱(Embossing) 기술을 리쏘그라피에 적용한 것이다.Nanoimprint technology, a method of fabricating nanodevices introduced by Stephen Y. Chou of Princeton University in the mid-1990s, is drawing attention as an alternative to low-productivity electron beam lithography and expensive optical lithography. Nanoimprint technology is an embossing technique for lithography that is used for mass production of polymer material products with microscale patterns such as compact discs (CD).

나노 임프린트의 핵심은 전자빔 리쏘그라피나 다른 방법을 이용하여, 나노스케일의 구조를 갖는 스탬프를 제작하고, 스탬프를 고분자 박막에 각인하여, 나노스케일의 구조를 전사하고, 이를 반복 사용함으로써, 전자빔 리쏘그라피의 생산성 문제를 극복하자는 것이다.The core of nanoimprint is electron beam lithography using electron beam lithography or other methods to fabricate a nanoscale stamp, stamp the stamp on a polymer thin film, transfer the nanoscale structure, and use it repeatedly. Is to overcome the productivity problem.

상기와 같은 스탬프의 재료로는 실리콘 (Si), 산화실리콘(SiO2)과 같은 반도체 재료, 니켈(Ni)과 같은 금속 재료, 쿼츠(Quartz)와 같은 투명한 재료 및 고분자 물질 등이 사용될 수 있다.As the material of the stamp, a semiconductor material such as silicon (Si), silicon oxide (SiO 2), a metal material such as nickel (Ni), a transparent material such as quartz (Quartz), and a polymer material may be used.

임프린트 방법으로는 열을 가해 고분자를 성형하는 열 경화 방식의 임프린트 기법과 스탬프로 누르면서 자외선을 이용하여 고분자를 경화하여 성형하는 자외선 경화 방식의 임프린트 기법이 있는데, 앞서 나열한 물질은 모두 열경화 방식에 사용될 수 있으며, 특히 쿼츠 글래스, 투명 고분자 재료는 자외선 경화 방식에도 사용될 수 있다.Imprint methods include a thermosetting imprint technique that applies heat to form a polymer and an ultraviolet curing imprint technique that forms by curing a polymer using ultraviolet rays while pressing with a stamp. All the materials listed above can be used for thermosetting. In particular, quartz glass, transparent polymer material may be used in the ultraviolet curing method.

도 1은 종래의 열 경화 방식의 나노 임프린트 공정을 보인 개략 공정도로서, 대표적인 나노 임프린트 공정의 흐름을 보여준다.1 is a schematic process chart showing a conventional thermal curing nanoimprint process, showing a typical nanoimprint process flow.

상기 도면을 참조하여 우선 열경화 방식에 대해 설명하면, 실리콘과 같은 기판(1)에 고분자 박막(2)을 스핀 코팅한다. Referring to the above-described thermal curing method, first, the polymer thin film 2 is spin-coated on a substrate 1 such as silicon.

그런 다음, 제작된 스탬프(3)와 기판(1)을 평행하게 놓고, 고분자 박막(2)을 유리 전이 온도까지 가열한다.Then, the produced stamp 3 and the substrate 1 are placed in parallel, and the polymer thin film 2 is heated to the glass transition temperature.

그리고 나서, 스탬프(3)를 고분자 박막(2)과 물리적 접촉을 시키고, 압력을 가한 후, 온도를 낮춘다.Then, the stamp 3 is brought into physical contact with the polymer thin film 2, pressurized, and then the temperature is lowered.

그런 다음, 온도가 유리 전이 온도 이하가 되면 스탬프(3)와 고분자 박막(2)을 분리한다.Then, when the temperature is below the glass transition temperature, the stamp 3 and the polymer thin film 2 are separated.

한편, 자외선 경화방식은 열경화 방식과 유사한 방법이지만, 투명한 스탬프(3)와 자외선 경화형 고분자(2)를 이용해서 자외선 조사를 통해 경화하는 방식에서 그 차이점이 있다.On the other hand, the ultraviolet curing method is similar to the thermosetting method, but there is a difference in the method of curing through ultraviolet irradiation using a transparent stamp (3) and ultraviolet curing polymer (2).

상기 자외선 경화방식은 높은 온도와 압력을 필요로 하지 않기 때문에 최근에 많은 연구가 진행되고 있는 방식이다.Since the UV curing method does not require a high temperature and pressure, a lot of research has recently been conducted.

상기와 같은 나노 임프린트 공정에 의해 스탬프(3) 상의 나노 패턴이 고분자 박막(2)으로 옮겨지게 된다.The nano pattern on the stamp 3 is transferred to the polymer thin film 2 by the nanoimprint process as described above.

최근에는 관련 장비 기술의 발달에 힘입어, 작은 면적의 스탬프를 제작하고, 웨이퍼의 일부분에 임프린트 공정을 수행하고, 스탬프의 위치를 이동시켜 반복 작업을 수행하는 스텝 반복(Step-and-repeat) 방식의 기술에 대한 연구가 활발히 진행되고 있다.Recently, thanks to the development of related equipment technology, a step-and-repeat method of producing a small area stamp, performing an imprint process on a portion of the wafer, and repeating work by moving the stamp position Research on the technology of the is actively being conducted.

특히, 자외선 경화 방식과 스텝 반복 방식이 결합된 스탭 앤 플래쉬 임프린트 리쏘그라피(Step and Flash Imprint Lithography) 방식은 기술적으로 가장 앞서 있다고 평가되고 있다. In particular, step and flash imprint lithography, which combines UV curing and step repetition, is considered to be at the forefront of technology.

이러한, 나노 Imprint 공정을 위해서는 스템프의 제작이 필수 적이다.For such a nano imprint process, the production of stamp is essential.

그러나, 이러한 고 밀도의 나노 패턴을 갖는 대 면적 스탬프를 전자빔 리쏘그라피로 제작하는 것은 고비용이 발생되는 문제가 있다.However, manufacturing large area stamps having such high density nanopatterns with electron beam lithography has a problem of high cost.

따라서, 나노임프린트를 위한 200nm주기 이하의 초미세 패턴을 갖는 쿼츠(Quartz) 스템프를 저 비용으로 쉽게 제작할 수 있도록 하는 스탬프 제작 방법이 시급히 요구되고 있다.Therefore, there is an urgent need for a stamp manufacturing method for easily manufacturing a quartz stamp having an ultrafine pattern of 200 nm or less for nanoimprint at low cost.

본 발명은 상기와 같은 문제점을 해결하고자 제안된 것으로서, 본 발명의 목적은 200nm이하의 주기 그레이팅 패턴을 가진 쿼츠 스템프를 저비용으로 쉽게 제작하는데 있다.The present invention is proposed to solve the above problems, and an object of the present invention is to easily manufacture a quartz stamp having a periodic grating pattern of less than 200nm at low cost.

또한, 레이저 간섭 리쏘그래피와 사이드 월 패터닝(Side wall patterning)을 사용하는데 그 목적이 있다.It also aims to use laser interference lithography and side wall patterning.

상기의 목적을 달성하기 위한 본 발명에 따른 나노 임프린트용 쿼츠 스템프 제작 방법은, 쿼츠 기판 위에 질화실리콘(Si3N4)을 증착하는 단계; 상기 질화실리콘(Si3N4)위에 감광성 물질을 코팅하는 단계; 상기 감광성 물질을 레이저 간섭 리쏘그라피 방식을 이용해 패터닝하는 단계; 상기 감광성 물질을 마스크로 하여 질화실리콘(Si3N4)을 식각하는 단계; 상기 감광성 물질을 제거한 후, 질화실리콘(Si3N4) 위에 폴리실리콘(Poly-Si)을 증착하는 단계; 상기 질화실리콘(Si3N4)부분까지 폴리실리콘(Poly-Si)을 식각하는 단계; 상기 질화실리콘(Si3N4)을 에칭용액인 인산(H3PO4)로 식각하여 제거하는 단계; 상기 폴리실리콘(Poly-Si)을 마스크로 하여 쿼츠를 식각하는 단계; 상기 폴리실리콘(Poly-Si) 마스크를 제거하는 단계를 포함하여 이루어지는 것을 특징으로 한다.Nano imprint quartz stamp manufacturing method according to the present invention for achieving the above object comprises the steps of: depositing silicon nitride (Si3N4) on a quartz substrate; Coating a photosensitive material on the silicon nitride (Si 3 N 4); Patterning the photosensitive material using laser interference lithography; Etching silicon nitride (Si 3 N 4) using the photosensitive material as a mask; Removing the photosensitive material and then depositing poly-Si on silicon nitride (Si 3 N 4); Etching polysilicon up to the silicon nitride (Si 3 N 4) portion; Etching and removing the silicon nitride (Si 3 N 4) with phosphoric acid (H 3 PO 4) as an etching solution; Etching quartz using the poly-silicon as a mask; It characterized in that it comprises a step of removing the poly-silicon (Poly-Si) mask.

그리고, 상기의 목적을 달성하기 위한 본 발명의 다른 실시 예에 따른 나노 임프린트용 쿼츠 스템프 제작 방법은 쿼츠 기판에 폴리머를 코팅하는 단계; 상기 폴리머를 레이저 간섭 리쏘그라피를 이용하여 패터닝하는 단계; 상기 폴리머 패턴 위에 산화실리콘(SiO2)을 증착하는 단계; 상기 산화실리콘(SiO2)을 폴리머 부분까지 식각하는 단계; 상기 폴리머를 에칭용액으로 식각하여 제거하는 단계; 상기 산화실리콘(SiO2)을 마스크로 하여 쿼츠 기판을 식각하는 단계; 상기 산화실리콘(SiO2) 마스크를 제거하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In addition, the method for manufacturing a quartz stamp for nano imprint according to another embodiment of the present invention for achieving the above object comprises the steps of coating a polymer on a quartz substrate; Patterning the polymer using laser interference lithography; Depositing silicon oxide (SiO 2) on the polymer pattern; Etching the silicon oxide (SiO 2) to a polymer portion; Etching away the polymer with an etching solution; Etching a quartz substrate using the silicon oxide (SiO 2) as a mask; And removing the silicon oxide (SiO 2) mask.

여기서, 상기 감광성 물질은 포토레지스트인 것을 특징으로 한다.Here, the photosensitive material is characterized in that the photoresist.

여기서, 상기 질화실리콘(Si3N4)을 건식 식각 또는 습식 식각하는 것을 특징으로 한다.Here, the silicon nitride (Si3N4) is characterized in that the dry etching or wet etching.

여기서, 상기 공정으로 이루어지는 쿼츠 스탬프가 200nm 이하의 그레이팅 주기를 갖는 것을 특징으로 한다.Here, the quartz stamp made of the above process is characterized by having a grating period of 200nm or less.

이하, 본 발명에 따른 바람직한 실시 예를 첨부된 도면을 참조하여 자세히 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도면의 설명에 앞서, 스템프의 재료로는 실리콘(Si), 산화실리콘(SiO2), 쿼츠 글래스(quartz glass), 니켈(Ni), 플래티늄(Pt), 크롬(Cr), 고분자 물질 등이 많이 사용되는데, 그 중 쿼츠 글래스 기판을 이용한 100nm 주기 그레이팅을 예로 들어 설명하고자 한다. Prior to the description of the drawings, as a material of the stamp, silicon (Si), silicon oxide (SiO 2), quartz glass, nickel (Ni), platinum (Pt), chromium (Cr), polymer materials, etc. are used a lot. A 100 nm periodic grating using a quartz glass substrate will be described as an example.

이하, 도 2를 참조하여 200nm주기 이하 그레이팅 패턴 스탬프 제작 방법을 설명하면 다음과 같다.Hereinafter, a method of manufacturing a grating pattern stamp of 200 nm or less with reference to FIG. 2 will be described.

도 2는 본 발명에 따른 나노 임프린트용 쿼츠 스템프 제작 방법을 나타낸 공정도이다.2 is a process chart showing a method for manufacturing a quartz stamp for nanoimprint according to the present invention.

동 도면에서 보여지는 바와 같이 우선, 쿼츠 기판(10) 위에 질화실리콘(20)를 증착한다(도 2b). 그리고, 감광성 물질(Photo Resist, 30)을 질화실리콘(20) 위에 코팅한다(도 2c).As shown in the figure, first, silicon nitride 20 is deposited on a quartz substrate 10 (FIG. 2B). Then, a photosensitive material (Photo Resist) 30 is coated on the silicon nitride 20 (FIG. 2C).

그리고, 상기 감광성 물질(30)을 레이저 간접 리쏘그라피 방식을 이용해 패터닝한다(도 2d).The photosensitive material 30 is then patterned using a laser indirect lithography method (FIG. 2D).

그리고, 상기 감광성 물질(30)을 마스크로 사용하여 질화실리콘(20)를 건식 식각(dry etching) 또는 습식 식각(wet etching)한다(도 2e).Then, the silicon nitride 20 is dry etched or wet etched using the photosensitive material 30 as a mask (FIG. 2E).

그리고, 감광성 물질(30)을 제거한 후, 질화실리콘(20) 위에 폴리 실리콘(40)을 증착한다(도 2f). 그리고, 질화실리콘(20) 부분까지 폴리실리콘(40)를 식각한다(도 2g).After removing the photosensitive material 30, polysilicon 40 is deposited on the silicon nitride 20 (FIG. 2F). Then, the polysilicon 40 is etched to the silicon nitride 20 portion (FIG. 2G).

그리고, 에칭용액인 인산(H3PO4)로 질화실리콘(20)를 제거한다(도 2h).Then, the silicon nitride 20 is removed with phosphoric acid (H 3 PO 4) as an etching solution (FIG. 2H).

그리고, 마지막으로 폴리실리콘(40)를 마스크로 쿼츠를 식각한다(도 2i).Finally, quartz is etched using the polysilicon 40 as a mask (FIG. 2I).

그리고, 폴리실리콘(40) 마스크를 제거함으로써, 100nm 주기 쿼츠 스템프를 완성한다(도 2j).Then, by removing the polysilicon 40 mask, a 100 nm periodic quartz stamp is completed (FIG. 2J).

도 3은 본 발명의 다른 실시 예에 따른 나노 임프린트용 쿼츠 스템프 제작 방법을 나타낸 공정도이다.3 is a process chart showing a method of manufacturing a quartz stamp for nano imprint according to another embodiment of the present invention.

동 도면에서 보여지는 바와 같이 우선, 쿼츠 기판(10)에 폴리머(polymer, 50)를 코팅한다(도 3a).As shown in the figure, first, a polymer 50 is coated on a quartz substrate 10 (FIG. 3A).

그리고, 레이저 간섭 리쏘그라피를 이용하여 폴리머(50)를 패터닝한다(도 3b). 이때, 상기 폴리머(50)는 200nm 주기에 50nm선 폭으로 패턴된다.The polymer 50 is then patterned using laser interference lithography (FIG. 3B). At this time, the polymer 50 is patterned with a 50nm line width in a 200nm period.

그리고, 폴리머(50) 위에 산화실리콘(SiO2, 60)을 증착한다(도 3c). 그리고, 폴리머(50) 부분까지 산화실리콘(SiO2, 60)을 식각한다(도 3d). 그리고, 에칭용액으로 폴리머(50)를 식각하여 제거한다(도 3e).Then, silicon oxide (SiO 2, 60) is deposited on the polymer 50 (FIG. 3C). Then, silicon oxide (SiO 2, 60) is etched to the polymer 50 portion (FIG. 3D). Then, the polymer 50 is etched and removed with an etching solution (FIG. 3E).

그리고, 산화실리콘(60)를 마스크로 쿼츠 기판을 식각한다(도 3f). 그리고, 산화실리콘(60) 마스크를 제거함으로써, 사이드 월 패터닝 공정을 이용한 100nm 주기의 쿼츠 스템프를 완성한다(도 3g).Then, the quartz substrate is etched using the silicon oxide 60 as a mask (FIG. 3F). Then, the silicon oxide 60 mask is removed, thereby completing a 100 nm cycle quartz stamp using the sidewall patterning process (FIG. 3G).

상기와 같은 공정으로 이루어지는 본 발명에 따른 쿼츠 스탬프는 200nm 이하의 그레이팅 주기를 갖는다.The quartz stamp according to the present invention having the above process has a grating period of 200 nm or less.

상기와 같은 본 발명은 200nm주기이하의 그레이팅 패턴을 가진 스템프로서, 열을 가해 폴리머를 성형하는 열경화 방식의 임프린트 기법과 스탬프로 누르면서 자외선을 이용하여 폴리머를 경화시킴으로써 성형하는 자외선 경화 방식의 임프린트 기법 모두에 사용될 수 있으며, 특히 쿼츠 재질의 스템프를 저비용으로 대면적에 걸쳐 쉽게 제작할 수 있다.The present invention as described above is a stamp having a grating pattern of less than 200nm period, a thermosetting imprint technique for applying a heat to form a polymer and an ultraviolet curing imprint technique for molding by curing the polymer using ultraviolet light while pressing with a stamp. It can be used for both, and especially quartz stamps can be produced easily over a large area at low cost.

본 발명은 쿼츠 스탬프를 열경화 방식의 임프린트 기법과 자외선 경화 방식의 임프린트 기법 모두에 사용할 수 있는 효과가 있다.The present invention has an effect that the quartz stamp can be used for both the thermosetting imprint technique and the ultraviolet curing imprint technique.

그리고, 쿼츠 재질의 스템프를 저비용으로 대면적에 걸쳐 쉽게 제작할 수 있는 효과가 있다.And, there is an effect that can be easily produced over a large area of quartz stamp at a low cost.

도 1은 종래의 열 경화 방식의 나노 임프린트 공정을 보인 개략 공정도.1 is a schematic process chart showing a conventional thermal curing nanoimprint process.

도 2a 내지 도 2j는 본 발명에 따른 나노 임프린트용 쿼츠 스템프 제작 방법을 나타낸 공정도.Figure 2a to 2j is a process chart showing a method for manufacturing a quartz stamp for nanoimprint according to the present invention.

도 3a 내지 도 3g는 본 발명의 다른 실시 예에 따른 나노 임프린트용 쿼츠 스템프 제작 방법을 나타낸 공정도.Figure 3a to 3g is a process diagram showing a method for manufacturing a quartz stamp for nano imprint according to another embodiment of the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

10: 쿼츠 기판 20: 질화실리콘(Si3N4)10: quartz substrate 20: silicon nitride (Si3N4)

30: 감광성 물질(Photo Resist) 40: 폴리실리콘(Poly-Si)30: Photo Resist 40: Poly-Si

50: 폴리머(polymer) 60: 산화실리콘(SiO2)50: polymer 60: silicon oxide (SiO2)

Claims (5)

쿼츠 기판 위에 질화실리콘(Si3N4)을 증착하는 단계;Depositing silicon nitride (Si 3 N 4) on a quartz substrate; 상기 질화실리콘(Si3N4) 위에 감광성 물질을 코팅하는 단계;Coating a photosensitive material on the silicon nitride (Si 3 N 4); 상기 감광성 물질을 레이저 간섭 리쏘그라피 방식을 이용해 패터닝하는 단계;Patterning the photosensitive material using laser interference lithography; 상기 감광성 물질을 마스크로 하여 질화실리콘(Si3N4)을 식각하는 단계;Etching silicon nitride (Si 3 N 4) using the photosensitive material as a mask; 상기 감광성 물질을 제거한 후, 질화실리콘(Si3N4) 위에 폴리실리콘(Poly-Si)을 증착하는 단계;Removing the photosensitive material and then depositing poly-Si on silicon nitride (Si 3 N 4); 상기 질화실리콘(Si3N4)부분까지 폴리실리콘(Poly-Si)을 식각하는 단계;Etching polysilicon up to the silicon nitride (Si 3 N 4) portion; 상기 질화실리콘(Si3N4)을 식각하여 제거하는 단계;Etching and removing the silicon nitride (Si 3 N 4); 상기 폴리실리콘(Poly-Si)을 마스크로 하여 쿼츠를 식각하는 단계;Etching quartz using the poly-silicon as a mask; 상기 폴리실리콘(Poly-Si)을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 나노 임프린트용 쿼츠 스템프 제작 방법.The method of manufacturing a quartz stamp for nano imprint comprising the step of removing the poly-silicon (Poly-Si). 쿼츠 기판에 폴리머를 코팅하는 단계;Coating a polymer on a quartz substrate; 상기 폴리머를 레이저 간섭 리쏘그라피를 이용하여 패터닝하는 단계;Patterning the polymer using laser interference lithography; 상기 폴리머 패턴 위에 산화실리콘(SiO2)을 증착하는 단계;Depositing silicon oxide (SiO 2) on the polymer pattern; 상기 산화실리콘(SiO2)을 폴리머 부분까지 식각하는 단계;Etching the silicon oxide (SiO 2) to a polymer portion; 상기 폴리머를 에칭용액으로 식각하여 제거하는 단계;Etching away the polymer with an etching solution; 상기 산화실리콘(SiO2)을 마스크로 하여 쿼츠 기판을 식각하는 단계;Etching a quartz substrate using the silicon oxide (SiO 2) as a mask; 상기 산화실리콘(SiO2) 마스크를 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 나노 임프린트용 쿼츠 스템프 제작 방법.The method of manufacturing a quartz stamp for nano imprint comprising the step of removing the silicon oxide (SiO2) mask. 제 1항에 있어서,The method of claim 1, 상기 감광성 물질은 포토레지스트인 것을 특징으로 하는 나노 임프린트용 쿼츠 스템프 제작 방법.The photosensitive material is a nano imprint quartz stamp manufacturing method, characterized in that the photoresist. 제 1항에 있어서,The method of claim 1, 상기 질화실리콘(Si3N4)을 건식 식각 또는 습식 식각하는 것을 특징으로 하는 나노 임프린트용 쿼츠 스템프 제작 방법.The method of manufacturing a quartz stamp for nanoimprint, characterized in that the dry etching or wet etching of the silicon nitride (Si3N4). 제 2항에 있어서,The method of claim 2, 상기 공정으로 이루어지는 쿼츠 스탬프가 200nm 이하의 그레이팅 주기를 갖는 것을 특징으로 하는 나노 임프린트용 쿼츠 스템프 제작 방법.The quartz stamp made of the process has a grating period of 200nm or less, characterized in that the quartz stamp manufacturing method for nanoimprint.
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KR100723021B1 (en) * 2006-06-20 2007-05-30 삼성전자주식회사 Nano imprint master and manufacturing method thereof
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