CN102468136A - Double patterning method - Google Patents
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- CN102468136A CN102468136A CN2010105525281A CN201010552528A CN102468136A CN 102468136 A CN102468136 A CN 102468136A CN 2010105525281 A CN2010105525281 A CN 2010105525281A CN 201010552528 A CN201010552528 A CN 201010552528A CN 102468136 A CN102468136 A CN 102468136A
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Abstract
The invention relates to a double patterning method, comprising the following steps: providing a substrate, a first imprint mold and a second imprint mold respectively, wherein a hard mask layer is formed on the substrate, the first imprint mold is provided with a first pattern, and the second imprint mold is provided with a second pattern; imprinting the hard mask layer using the first imprint mold to transfer the first pattern to the hard mask layer; forming a photoresist layer to cover the hard mask layer after imprinted; imprinting the photoresist layer using the second imprint mold to transfer the second pattern to the photoresist layer; and etching the hard mask layer with the photoresist layer as the mask to transfer the second pattern to the hard mask layer. The double patterning method is beneficial for improving the patterning precision, reducing the pattern line width and improving the device integration.
Description
Technical field
The present invention relates to semiconductor fabrication, relate in particular to a kind of double-pattern method.
Background technology
Semiconductor technology strides forward towards littler process node under the driving of Moore's Law constantly.Along with the continuous progress of semiconductor technology, the function of device is gradually become strong, but the semiconductor manufacture difficulty also grows with each passing day.And photoetching technique is a production technology the most key in the semiconductor fabrication process; Along with the semiconductor technology node enters into 65 nanometers, 45 nanometers; Even 32 lower nanometers; The ArF light source light lithography of existing 193nm can't satisfy the needs that semiconductor is made, and extreme ultraviolet light photoetching technique (EUV), multi-beam do not have the research focus that mask technique and nanometer embossing become photoetching candidate technologies of future generation.But above-mentioned photoetching candidate technologies of future generation still has inconvenience and defective, demands urgently further improving.
When the step that continues to extend forward when Moore's Law is irreversible; The double-pattern technology becomes the optimal selection of industry undoubtedly; Double-patternization technology only need be carried out very little change to existing photoetching infrastructure, just can fill up 45 nanometers effectively to 32 nanometers even the photoetching technique blank of minor node more.The principle of double-patternization technology with the highdensity circuitous pattern of a cover resolve into that two covers are discrete, the lower figure of density, then they are prepared on the wafer.
Fig. 1 to Fig. 4 is the profile of a kind of intermediate structure of double-pattern method in the prior art.
With reference to figure 1, substrate 10 is provided, in said substrate 10, form dielectric layer 11, on dielectric layer 11, form hard mask layer 12.On hard mask layer 12, form first photoresist layer, and first photoresist layer is carried out graphically defining first figure 13.
With reference to figure 2, be mask with patterned first photoresist layer, etching hard mask layer 12, corresponding first figure 13 is also transferred to hard mask layer 12.
With reference to figure 3, form second photoresist layer, cover said first figure and dielectric layer 11, second photoresist layer is carried out graphically defining second graph 14.
With reference to figure 4, be mask with first figure 13 with second graph 14, etching dielectric layer 11 arrives dielectric layer 11 with first figure 13 and the figure transfer that second graph 14 defines.
In the above-mentioned double-pattern method, the etching figure is converted into first figure 13 and second graph 14 separate, that density is lower, then it is transferred on the dielectric layer 11, make that the density of the exposure figure of photoresist is less each time.But the precision of above-mentioned double-pattern method still can't satisfy further process requirements, because the restriction of optical source wavelength in the exposure process makes that the live width of each exposure figure is bigger, influences the integrated level of device.
About more detailed contents of double-pattern method, please refer to the patent No. and be 6042998 United States Patent (USP).
Summary of the invention
The problem that the present invention solves is the lower problem of graphical precision, to reduce the live width of figure, improves the integrated level of device.
For addressing the above problem, the invention provides a kind of double-pattern method, comprising:
Substrate, first impressing mould and second impressing mould are provided respectively, are formed with hard mask layer in the said substrate, said first impressing mould has first figure, and said second impressing mould has second graph;
Use said first impressing mould that said hard mask layer is impressed, with said first figure transfer to said hard mask layer;
Form photoresist layer, cover the hard mask layer behind the said impression;
Use said second impressing mould that said photoresist layer is impressed, said second graph is transferred to said photoresist layer;
With said photoresist layer is that mask carries out etching to said hard mask layer, and said second graph is transferred to said hard mask layer.
Optional, said first impressing mould of said use impresses said hard mask layer and comprises: said hard mask layer is softened; Use said first impressing mould that said hard mask layer is carried out punching press; Said hard mask layer is freezed; Remove said first impressing mould.
Optional, heat said hard mask layer said softening comprising.
Optional, said freeze to comprise said hard mask layer is cooled off.
Optional, said second impressing mould of said use impresses said photoresist layer and comprises: use said second impressing mould that said photoresist layer is carried out punching press; Remove said second impressing mould; Said photoresist layer is freezed.
Optional, said freezing comprises: said photoresist layer is made public and/or cures.
Optional, the material of said hard mask layer is polysilicon, silica, silicon nitride, carborundum or metal.
Optional, said double-pattern method also comprises: remove said photoresist layer; With said hard mask layer is mask, and etching is carried out in said substrate.
Compared with prior art, the present invention has the following advantages:
The present technique scheme at first uses first impressing mould that hard mask layer is impressed, and on first figure transfer to said hard mask layer, on hard mask layer, forms photoresist layer afterwards again; And use second impressing mould that said photoresist layer is impressed; Second graph is transferred to said photoresist layer, is that mask carries out etching to said hard mask layer with said photoresist layer more afterwards, and said second graph is transferred on the hard mask layer; Thereby the restriction of exposure technology when having broken away from photoetching; Help improving patterned precision, reduce the figure live width, improve integrated level.
Description of drawings
Fig. 1 to Fig. 4 is the profile of the intermediate structure of prior art double-pattern method;
Fig. 5 is the schematic flow sheet of the double-pattern method of the embodiment of the invention;
Fig. 6 to Figure 14 is the profile of intermediate structure of the double-pattern method of the embodiment of the invention.
Embodiment
The double-pattern method of prior art is divided into density lower two independently behind the figure with exposure figure, makes public respectively, receives the restriction of exposure technology, and its graphical precision is still lower, can't satisfy further arts demand.
The present technique scheme at first uses first impressing mould that hard mask layer is impressed, and on first figure transfer to said hard mask layer, on hard mask layer, forms photoresist layer afterwards again; And use second impressing mould that said photoresist layer is impressed; Second graph is transferred to said photoresist layer, is that mask carries out etching to said hard mask layer with said photoresist layer more afterwards, and said second graph is transferred on the hard mask layer; Thereby the restriction of exposure technology when having broken away from photoetching; Help improving patterned precision, reduce the figure live width, improve integrated level.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of following disclosed embodiment.
Fig. 5 shows the schematic flow sheet of the double-pattern method of the embodiment of the invention, comprising:
Step S21 provides substrate, first impressing mould and second impressing mould respectively, is formed with hard mask layer in the said substrate, and said first impressing mould has first figure, and said second impressing mould has second graph;
Step S22 uses said first impressing mould that said hard mask layer is impressed, with said first figure transfer to said hard mask layer;
Step S23 forms photoresist layer, covers the hard mask layer behind the said impression;
Step S24 uses said second impressing mould that said photoresist layer is impressed, and said second graph is transferred to said photoresist layer;
Step S25 is that mask carries out etching to said hard mask layer with said photoresist layer, and said second graph is transferred to said hard mask layer.
Fig. 6 to Figure 14 shows the profile of intermediate structure of the double-pattern method of the embodiment of the invention, below in conjunction with Fig. 5 and Fig. 6 to Figure 14 embodiments of the invention is elaborated.
In conjunction with Fig. 5 and Fig. 6, execution in step S21 provides substrate, first impressing mould and second impressing mould respectively, is formed with hard mask layer in the said substrate, and said first impressing mould has first figure, and said second impressing mould has second graph.Concrete, substrate 20 is provided, be formed with hard mask layer 21 in the said substrate 20, first impressing mould 30 is provided, said first impressing mould 30 has first figure, and second impressing mould 40 is provided, and said second impressing mould 40 has second graph.
Said substrate 20 is a semi-conducting material; Can be monocrystalline silicon; Also can be silicon Germanium compound, can also be epitaxial layer structure on silicon-on-insulator (SOI, Silicon On Insulator) structure or the silicon; Wherein can also be formed with semiconductor device such as MOS transistor, can be coated with dielectric layer on the said semiconductor device.The material of said hard mask layer 21 can be polysilicon, silica, silicon nitride, carborundum or metal.
Said first impressing mould 30 has first figure, and is concrete, is formed with protruding 30a on said first impressing mould 30, and said protruding 30a distributes and forms said first figure.
Said second impressing mould 40 has second graph, and is concrete, is formed with protruding 40a on said second impressing mould 40, and said protruding 40a distributes and forms said second graph.
In conjunction with Fig. 5, Fig. 7 and Fig. 8, execution in step S22 uses said first impressing mould that said hard mask layer is impressed, with said first figure transfer to said hard mask layer.
At first with reference to figure 7; Use 30 pairs of said hard mask layers 21 of said first impressing mould to impress; Concrete, at first said hard mask layer 21 is softened, softening process described in the present embodiment mainly comprises hard mask layer 21 is heated; The temperature and time of heating can be confirmed according to the material and the thickness of said hard mask layer 21, makes said hard mask layer 21 soften into the semi-molten state; Use the said hard mask layer 21 after softening of 30 pairs of said first impressing moulds to carry out punching press afterwards; Make the protruding 30a of said first impressing mould 30 embed in the said hard mask layer 21; Be noted that protruding 30a described in the moulding process needs to contact with the surface of said substrate 20; More said hard mask layer 21 is freezed, make its setting, said freezing process can be that said hard mask layer 21 is cooled off, and it is qualitative that it is solidified, thereby with on said first figure transfer to the said hard mask layer 21.
With reference to figure 8, after said freezing process, remove said first impressing mould afterwards, form the hard mask layer 21 after impressing.
Because first figure on said first impressing mould can adopt method formation such as machining; It is very little that its live width can be made; Method through impression is carried out graphically hard mask layer, has avoided the restriction of conventional exposure technology in the prior art, has improved patterned precision.In addition, the conventional photoetching process of the hard mask layer that impression back forms has better pattern, helps improving the pattern of the figure that the subsequent etching technical process forms.
In conjunction with Fig. 5 and Fig. 9, execution in step S23 forms photoresist layer, covers the hard mask layer behind the said impression.Concrete; Form photoresist layer 22, cover the hard mask layer 21 behind the said impression, the formation method of said photoresist layer 22 can be methods such as spin coating, spraying; Said photoresist layer 22 is filled the groove that hard mask layer 21 forms behind impression, and covers the hard mask layer 21 behind the said impression.
In conjunction with Fig. 5, Figure 10 and Figure 11, execution in step S24 uses said second impressing mould that said photoresist layer is impressed, and said second graph is transferred to said photoresist layer.Concrete; Use 40 pairs of said photoresist layers 22 of said second impressing mould to impress, concrete, because photoresist is originally as jelly; Therefore not needing it is softened to use said second impressing mould 40 that it is carried out punching press; Make the protruding 40a of said second impressing mould 40 embed in the said photoresist layer 22, it should be noted that in the impression punching course; The protruding 40a of said second impressing mould 40 needs to contact with the surface of said hard mask layer 21, thereby said second graph is transferred on the said photoresist layer 22.
Similar with first impressing mould, it is very little that the live width of the second graph on said second impressing mould also can be made, and is beneficial to the improvement of pattern of raising and the photoresist layer 22 of graphical precision equally.
In the present embodiment, on hard mask layer 21, form photoresist layer 22, and photoresist layer 22 is impressed, and do not adopt second impressing mould 40 directly said hard mask layer 21 to be impressed.Therefore because moulding process need soften hard mask layer 21, photoresist layer 22 is impressed and avoided the destruction of softening process first figure that formed on the hard mask layer 21.
With reference to Figure 11, after use second impressing mould carries out punching press to photoresist layer 22, said second impressing mould is removed, and said photoresist layer 22 is freezed.The said process of freezing can be that said photoresist layer 22 is made public and/or cures.Said exposure can be adopted ultraviolet exposure, and the temperature of confirming to cure according to the concrete material of photoresist layer 22 and composition, duration etc., thereby said second graph is transferred on the photoresist layer 22, forms the photoresist layer 22 behind the impression.
With reference to Figure 12, execution in step S25 is that mask carries out etching to said hard mask layer with said photoresist layer, and said second graph is transferred to said hard mask layer.Concrete; Photoresist layer 22 after freezing with said impression is a mask, and said hard mask layer 21 is carried out etching, and said second graph is transferred on the said hard mask layer 21; Said first figure and second graph intert each other, have constituted actual figure to be formed jointly.Said etching process can be dry etching, wet etching etc.
With reference to Figure 13, remove said photoresist layer, expose said hard mask layer 21.The removal method of said photoresist layer can be ashing method (ashing) or well known to a person skilled in the art additive method.
With reference to Figure 14, be mask with said hard mask layer 21, etching is carried out in said substrate 20, said first figure and second graph are transferred in the said substrate 20.Said lithographic method can be dry etching or wet etching.
In the foregoing description, adopt two step impressions, first figure and second graph are transferred on the hard mask layer, help improving graphical precision, reduce live width, improve integrated level.And second graph is formed on the photoresist layer through impression, need not to carry out thermoplastic, avoided softening process to before be formed on the destruction of first figure on the hard mask layer.
To sum up, the present technique scheme at first uses first impressing mould that hard mask layer is impressed, on first figure transfer to said hard mask layer; On hard mask layer, form photoresist layer afterwards again, and use second impressing mould that said photoresist layer is impressed, second graph is transferred to said photoresist layer; Be that mask carries out etching to said hard mask layer with said photoresist layer afterwards again; Said second graph is transferred on the hard mask layer, thereby the restriction of exposure technology when having broken away from photoetching helps improving patterned precision; Reduce the figure live width, improve integrated level.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (8)
1. a double-pattern method is characterized in that, comprising:
Substrate, first impressing mould and second impressing mould are provided respectively, are formed with hard mask layer in the said substrate, said first impressing mould has first figure, and said second impressing mould has second graph;
Use said first impressing mould that said hard mask layer is impressed, with said first figure transfer to said hard mask layer;
Form photoresist layer, cover the hard mask layer behind the said impression;
Use said second impressing mould that said photoresist layer is impressed, said second graph is transferred to said photoresist layer;
With said photoresist layer is that mask carries out etching to said hard mask layer, and said second graph is transferred to said hard mask layer.
2. double-pattern method according to claim 1 is characterized in that, said first impressing mould of said use impresses said hard mask layer and comprises: said hard mask layer is softened; Use said first impressing mould that said hard mask layer is carried out punching press; Said hard mask layer is freezed; Remove said first impressing mould.
3. double-pattern method according to claim 2 is characterized in that, heat said hard mask layer said softening comprising.
4. double-pattern method according to claim 2 is characterized in that, said freeze to comprise said hard mask layer is cooled off.
5. double-pattern method according to claim 1 is characterized in that, said second impressing mould of said use impresses said photoresist layer and comprises: use said second impressing mould that said photoresist layer is carried out punching press; Remove said second impressing mould; Said photoresist layer is freezed.
6. double-pattern method according to claim 5 is characterized in that, said freezing comprises: said photoresist layer is made public and/or cures.
7. double-pattern method according to claim 1 is characterized in that, the material of said hard mask layer is polysilicon, silica, silicon nitride, carborundum or metal.
8. double-pattern method according to claim 1 is characterized in that, also comprises: remove said photoresist layer; With said hard mask layer is mask, and etching is carried out in said substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105525281A CN102468136A (en) | 2010-11-19 | 2010-11-19 | Double patterning method |
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| CN2010105525281A CN102468136A (en) | 2010-11-19 | 2010-11-19 | Double patterning method |
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Cited By (4)
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| CN102478764A (en) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | Dual graphing method |
| CN106610563A (en) * | 2015-10-22 | 2017-05-03 | 中芯国际集成电路制造(上海)有限公司 | Mask and double graphical method |
| CN107861335A (en) * | 2017-09-12 | 2018-03-30 | 友达光电股份有限公司 | Imprint mold and imprint mold manufacturing method |
| CN108319106A (en) * | 2018-01-04 | 2018-07-24 | 南方科技大学 | The method of nano impression |
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| CN102478764A (en) * | 2010-11-30 | 2012-05-30 | 中芯国际集成电路制造(北京)有限公司 | Dual graphing method |
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| CN106610563A (en) * | 2015-10-22 | 2017-05-03 | 中芯国际集成电路制造(上海)有限公司 | Mask and double graphical method |
| CN106610563B (en) * | 2015-10-22 | 2020-10-09 | 中芯国际集成电路制造(上海)有限公司 | Mask and double patterning method |
| CN107861335A (en) * | 2017-09-12 | 2018-03-30 | 友达光电股份有限公司 | Imprint mold and imprint mold manufacturing method |
| CN111752090A (en) * | 2017-09-12 | 2020-10-09 | 友达光电股份有限公司 | Method for manufacturing imprint mold |
| CN111752090B (en) * | 2017-09-12 | 2023-07-14 | 友达光电股份有限公司 | Method for manufacturing imprinting mold |
| CN108319106A (en) * | 2018-01-04 | 2018-07-24 | 南方科技大学 | The method of nano impression |
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