KR20050065632A - 비휘발성 저장 시스템의 소거 카운트 유지 방법 및 장치 - Google Patents
비휘발성 저장 시스템의 소거 카운트 유지 방법 및 장치 Download PDFInfo
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- KR20050065632A KR20050065632A KR1020057007326A KR20057007326A KR20050065632A KR 20050065632 A KR20050065632 A KR 20050065632A KR 1020057007326 A KR1020057007326 A KR 1020057007326A KR 20057007326 A KR20057007326 A KR 20057007326A KR 20050065632 A KR20050065632 A KR 20050065632A
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- block
- blocks
- erase count
- erased
- erase
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (29)
- 다수의 블록들을 포함하는 비휘발성 메모리를 구비하는 비휘발성 메모리 시스템과 연관되는 비휘발성 메모리내에 배열된 데이타 구조로서,다수의 블록들중 제 1 블록이 소거되는 다수의 횟수들의 표시를 제공하기 위하여 배열된 제 1 표시기; 및상기 다수의 블록들에 관한 정보를 포함하기 위하여 배열된 헤더를 포함하는 데이타 구조.
- 제 1 항에 있어서, 제 2 표시기를 더 포함하고, 상기 제 2 표시기는 상기 다수의 블록들중 제 2 블록이 제거되는 다수의 횟수들의 표시를 제공하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 1 항에 있어서, 제 2 표시기를 더 포함하고, 상기 제 2 표시기는 다수의 블록들의 제 2 블록이 사용되지 못하는 블록인 것의 표시를 제공하도록 배열되는 것을 특징으로 하는 데이타 구조.
- 제 3 항에 있어서, 제 2 표시기는 제 2 블록이 팩터 결함인 것을 표시하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 3 항에 있어서, 상기 제 2 표시기는 제 2 블록이 성장 결함인 것을 표시하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 1 항에 있어서, 상기 헤더는 평균 소거 카운트를 포함하고, 상기 평균 소거 카운트는 다수의 블록들의 각각의 블록이 소거되는 평균 소거 횟수들을 표시하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 1 항에 있어서, 상기 헤더는 평균 소거 카운트를 포함하고, 상기 평균 소커 카운트는 다수의 블록들의 각각의 사용 가능한 블록이 소거되는 평균 횟수들을 표시하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 1 항에 있어서, 상기 비휘발성 메모리는 NAND 플래시 메모리인 것을 특징으로 하는 데이타 구조.
- 비휘발성 메모리 시스템은 다수의 물리적 블록들을 포함하는 비휘발성 메모리를 포함하고, 다수의 물리적 블록들의 각각의 물리적 블록은 물리적 블록이 소거되는 다수의 횟수들을 식별하기 위하여 배열된 연관된 식별기를 가지는, 비휘발성 메모리 시스템과 연관된 비휘발성 메모리에 배열된 블록으로서,다수의 물리적 블록들의 제 1 물리적 블록에 대한 제 1 식별기를 포함하도록 배열된 제 1 페이지 - 상기 제 1 식별기는 제 1 물리적 블록이 소거되는 다수의 횟수들을 식별하기 위하여 배열됨 -; 및카운트를 포함하도록 배열된 제 2 페이지를 포함하고, 상기 카운트는 다수의 물리적 블록들이 소거되는 평균 횟수를 표시하기 위하여 배열되는 블록.
- 제 9 항에 있어서, 상기 제 1 페이지는 추가로 다수의 블록들의 제 2 물리적 블록에 대한 제 2 식별기를 포함하도록 배열되고, 상기 제 2 식별기는 제 2 물리적 블록이 소거되는 다수의 횟수들을 식별하기 위하여 배열되는 것을 특징으로 하는 블록.
- 제 9 항에 있어서, 상기 제 1 페이지는 실질적으로 다수의 그룹들의 바이트들로 분할되고, 상기 다수의 그룹들의 바이트들의 제 1 그룹은 제 1 식별기를 포함하도록 배열되고, 상기 제 1 그룹의 바이트들은 제 1 물리적 블록과 연관되는 것을 특징으로 하는 블록.
- 제 11 항에 있어서, 상기 다수의 그룹들의 바이트들은 대략 1 바이트 및 대략 4 바이트 사이인 것을 특징으로 하는 블록.
- 제 11 항에 있어서, 상기 다수의 그룹들의 바이트들중 제 2 그룹의 바이트들은 다수의 물리적 블록들의 제 2 물리적 블록에 대한 제 2 식별기를 포함하도록 배열되고, 상기 제 2 식별기는 제 2 물리적 블록이 소거되는 다수의 횟수를 식별하기 위하여 배열되는 것을 특징으로 하는 블록.
- 제 11 항에 있어서, 상기 다수의 그룹들의 바이트들중 제 2 그룹의 바이트들은 하나의 표시를 포함하도록 배열되고, 상기 표시기는 다수의 물리적 블록들중 제 2 물리적 블록이 결함인 것을 표시하도록 배열되는 것을 특징으로 하는 블록.
- 제 9 항에 있어서, 제 3 페이지를 더 포함하고, 상기 제 3 페이지는 다수의 물리적 블록들중 제 2 물리적 블록에 대한 제 2 식별기를 포함하도록 배열되고, 상기 제 2 식별기는 제 2 물리적 블록이 소거되는 다수의 횟수들을 식별하기 위하여 배열되는 것을 특징으로 하는 블록.
- 제 9 항에 있어서, 상기 제 2 페이지는 헤더이고, 상기 헤더는 추가로 소거 카운트 블록을 식별하기 위하여 배열된 서명을 포함하도록 배열되는 것을 특징으로 하는 블록.
- 제 9 항에 있어서, 상기 비휘발성 메모리는 NAND 플래시 메모리인 것을 특징으로 하는 블록.
- 비휘발성 메모리 시스템으로서,다수의 블록들을 포함하는 비휘발성 메모리;시스템 메모리; 및다수의 블록들에 포함된 각각의 사용 가능한 블록이 소거되는 다수의 횟수들을 시스템 메모리에 표시하기 위한 수단을 포함하는 비휘발성 메모리 시스템.
- 제 18 항에 있어서, 상기 다수의 블록들에 포함된 각각의 블록이 소거되는 평균 횟수들을 시스템 메모리에 표시하기 위한 수단을 더 포함하는 것을 특징으로 하는 비휘발성 메모리 시스템.
- 제 19 항에 있어서, 상기 다수의 블록들에 포함된 각각 사용할 수 있는 블록이 소거되는 다수의 횟수들을 시스템 메모리에 표시하기 위한 수단은 상기 다수의 블록들에 포함된 각각의 사용 가능한 블록이 소거되는 횟수들을 시스템 메모리의 데이타 구조에 표시하기 위한 수단을 포함하고, 상기 다수의 블록들에 포함된 각각의 블록이 소거되는 평균 횟수를 시스템 메모리에 표시하기 위한 수단은 다수의 블록들에 포함된 각각의 블록이 소거되는 평균 횟수들을 데이타 구조에 표시하기 위한 수단을 포함하는 것을 특징으로 하는 비휘발성 메모리 시스템.
- 제 20 항에 있어서, 상기 데이타 구조는 소거 카운트 블록인 것을 특징으로 하는 비휘발성 메모리 시스템.
- 제 21 항에 있어서, 상기 다수의 블록들에 포함된 제 1 블록이 사용할 수 없을때 시스템 메모리에 표시하기 위한 수단을 더 포함하는 것을 특징으로 하는 비휘발성 메모리 시스템.
- 제 22 항에 있어서, 상기 다수의 블록들에 포함된 제 1 블록이 사용할 수 없을때를 비휘발성 메모리에 표시하기 위한 수단은 제 1 블록이 팩토리 결함을 포함할때를 비휘발성 메모리에 표시하기 위한 수단 및 제 1 블록이 성장하는 결함을 포함할때를 시스템 메모리에 표시하기 위한 수단을 포함하는 것을 특징으로 하는 비휘발성 메모리 시스템.
- 제 18 항에 있어서, 상기 비휘발성 메모리는 NAND 플래시 메모리인 것을 특징으로 하는 비휘발성 메모리 시스템.
- 비휘발성 메모리 시스템이 다수의 블록들을 포함하는 비휘발성 메모리를 포함하는, 비휘발성 메모리 시스템과 연관된 비휘발성 메모리의 물리적 블록에 배열되는 데이타 구조로서,제 1 다수의 표시기들 - 상기 제 1 다수의 표시기들은 다수의 블록들에 포함된 블록들이 소거되는 횟수들의 표시를 제공하기 위하여 배열되고 -; 및다수의 페이지들을 포함하고, 상기 다수의 페이지들의 페이지들은 제 1 다수의 표시기들을 포함하도록 배열되는 바이트들의 그룹으로 분할되고, 상기 다수의 페이지들의 제 1 페이지는 상기 다수의 블록들의 제 1 블록과 연관된 제 1 다수의 표시기들의 제 1 표시기를 포함하도록 배열되는 바이트들의 그룹중 제 1 그룹을 포함하는 데이타 구조.
- 제 25 항에 있어서, 제 2 다수의 표시기들을 더 포함하고, 상기 제 2 다수의 표시기들은 다수의 블록들에 포함된 블록들이 실질적으로 사용할 수 없을때를 표시하기 위하여 배열되는 것을 특징으로 하는 데이타 구조.
- 제 26 항에 있어서, 상기 바이트들의 그룹들은 제 2 다수의 표시기들을 포함하도록 추가로 배열되는 것을 특징으로 하는 데이타 구조.
- 제 26 항에 있어서, 상기 제 2 다수의 표시기들은 다수의 블록들의 제 2 블록이 제조 결함을 가질때를 식별하기 위하여 배열된 제 2 표시기 및 제 2 블록이 성장하는 결함을 가질때를 식별하기 위하여 배열된 제 3 표시기를 포함하는 것을 특징으로 하는 데이타 구조.
- 제 26 항에 있어서, 상기 비휘발성 메모리는 NAND 플래시 메모리인 것을 특징으로 하는 데이타 구조.
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Application Number | Priority Date | Filing Date | Title |
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US10/281,696 | 2002-10-28 | ||
US10/281,696 US6831865B2 (en) | 2002-10-28 | 2002-10-28 | Maintaining erase counts in non-volatile storage systems |
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KR20050065632A true KR20050065632A (ko) | 2005-06-29 |
KR100914089B1 KR100914089B1 (ko) | 2009-08-27 |
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KR1020057007326A KR100914089B1 (ko) | 2002-10-28 | 2003-09-10 | 비휘발성 저장 시스템의 소거 카운트 유지 방법 및 장치 |
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US (1) | US6831865B2 (ko) |
EP (1) | EP1559016B1 (ko) |
JP (1) | JP4372013B2 (ko) |
KR (1) | KR100914089B1 (ko) |
CN (1) | CN100385415C (ko) |
AT (1) | ATE388440T1 (ko) |
AU (1) | AU2003270527A1 (ko) |
DE (1) | DE60319563T2 (ko) |
TW (1) | TWI261168B (ko) |
WO (1) | WO2004040458A1 (ko) |
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- 2002-10-28 US US10/281,696 patent/US6831865B2/en not_active Expired - Lifetime
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2003
- 2003-09-10 JP JP2004548316A patent/JP4372013B2/ja not_active Expired - Fee Related
- 2003-09-10 EP EP03752225A patent/EP1559016B1/en not_active Expired - Lifetime
- 2003-09-10 DE DE60319563T patent/DE60319563T2/de not_active Expired - Lifetime
- 2003-09-10 AU AU2003270527A patent/AU2003270527A1/en not_active Abandoned
- 2003-09-10 WO PCT/US2003/028427 patent/WO2004040458A1/en active Application Filing
- 2003-09-10 CN CNB038247690A patent/CN100385415C/zh not_active Expired - Fee Related
- 2003-09-10 KR KR1020057007326A patent/KR100914089B1/ko active IP Right Grant
- 2003-09-10 AT AT03752225T patent/ATE388440T1/de not_active IP Right Cessation
- 2003-09-18 TW TW092125808A patent/TWI261168B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101283289B1 (ko) * | 2010-04-01 | 2013-07-15 | 인텔 코오퍼레이션 | 고체 상태 드라이브에서의 웨어 레벨링을 위한 방법 및 시스템 |
US8621141B2 (en) | 2010-04-01 | 2013-12-31 | Intel Corporations | Method and system for wear leveling in a solid state drive |
US11036493B2 (en) | 2018-01-25 | 2021-06-15 | SK Hynix Inc. | Memory system and operating method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP1559016B1 (en) | 2008-03-05 |
EP1559016A1 (en) | 2005-08-03 |
CN1701308A (zh) | 2005-11-23 |
KR100914089B1 (ko) | 2009-08-27 |
ATE388440T1 (de) | 2008-03-15 |
DE60319563D1 (de) | 2008-04-17 |
TW200422830A (en) | 2004-11-01 |
US20040080985A1 (en) | 2004-04-29 |
JP2006504197A (ja) | 2006-02-02 |
TWI261168B (en) | 2006-09-01 |
JP4372013B2 (ja) | 2009-11-25 |
AU2003270527A1 (en) | 2004-05-25 |
DE60319563T2 (de) | 2009-03-19 |
CN100385415C (zh) | 2008-04-30 |
US6831865B2 (en) | 2004-12-14 |
WO2004040458A1 (en) | 2004-05-13 |
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