KR20050065108A - 슬릿 형태를 개선한 레이저 마스크 및 이를 이용한결정화방법 - Google Patents
슬릿 형태를 개선한 레이저 마스크 및 이를 이용한결정화방법 Download PDFInfo
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- KR20050065108A KR20050065108A KR1020030096872A KR20030096872A KR20050065108A KR 20050065108 A KR20050065108 A KR 20050065108A KR 1020030096872 A KR1020030096872 A KR 1020030096872A KR 20030096872 A KR20030096872 A KR 20030096872A KR 20050065108 A KR20050065108 A KR 20050065108A
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- 238000002425 crystallisation Methods 0.000 title claims abstract description 142
- 230000008025 crystallization Effects 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims description 66
- 239000010409 thin film Substances 0.000 claims abstract description 168
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 96
- 239000010703 silicon Substances 0.000 claims abstract description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 230000005540 biological transmission Effects 0.000 claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 61
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 44
- 239000010410 layer Substances 0.000 claims description 39
- 239000004973 liquid crystal related substance Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 238000005499 laser crystallization Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 description 31
- 239000013078 crystal Substances 0.000 description 22
- 238000002844 melting Methods 0.000 description 17
- 230000008018 melting Effects 0.000 description 17
- 230000008901 benefit Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007790 solid phase Substances 0.000 description 8
- 238000007711 solidification Methods 0.000 description 8
- 230000008023 solidification Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- Thin Film Transistor (AREA)
Abstract
Description
Claims (22)
- 투과영역과 차단영역으로 구성되는 슬릿; 및상기 슬릿에 의해 결정화된 실리콘 박막의 에지부 형태에 대해 반전된 구조를 가지는 상기 슬릿의 에지부를 포함하는 레이저 마스크.
- 제 1 항에 있어서, 상기 슬릿의 투과영역은 상기 마스크에 적어도 한 개 이상 형성되어 레이저빔을 투과시키는 것을 특징으로 하는 레이저 마스크.
- 제 2 항에 있어서, 상기 슬릿의 투과영역은 상기 마스크에 다수의 블록 형태로 형성되는 것을 특징으로 하는 레이저 마스크.
- 제 3 항에 있어서, 상기 슬릿의 투과영역은 블록 형태로 이웃하는 투과영역과 엇갈리게 형성되는 것을 특징으로 하는 레이저 마스크.
- 제 1 항에 있어서, 상기 슬릿의 차단영역은 레이저빔을 차단하는 반사율이 뛰어난 알루미늄 계열의 금속물질로 형성하는 것을 특징으로 하는 레이저 마스크.
- 제 1 항에 있어서, 상기 슬릿의 에지부는 결정화된 실리콘 박막의 볼록한 에지부 형태에 대해 반전된 오목한 형태로 형성되는 것을 특징으로 하는 레이저 마스크.
- 제 6 항에 있어서, 상기 슬릿의 에지부는 오목한 삼각형, 오목한 라운드 또는 오목한 직사각형 등의 오목한 형태로 형성되는 것을 특징으로 하는 레이저 마스크.
- 비정질 실리콘 박막이 증착되어 있는 기판을 제공하는 단계;상기 기판 위에 투과영역과 차단영역으로 구성되는 슬릿과 상기 투과영역으로 구성된 슬릿의 에지부는 반전된 형태를 가지는 레이저 마스크를 위치시키는 단계;상기 레이저 마스크의 슬릿을 통해 상기 기판 표면에 1차 레이저빔을 조사하여 상기 실리콘 박막의 소정영역을 1차 결정화하는 단계;상기 레이저 마스크 또는 기판이 로딩된 스테이지를 X축으로 이동하여 상기 레이저 마스크를 이용하여 2차 결정화하는 단계;상기 X축 방향으로 기판의 끝까지 상기 2차 결정화 단계를 반복하는 단계; 및상기 레이저 마스크 또는 스테이지를 Y축 방향으로 이동하여 X축 방향으로의 결정화를 반복하여 결정화를 완료하는 단계를 포함하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 슬릿의 투과영역은 상기 마스크에 적어도 한 개 이상 형성되어 레이저빔을 투과시키는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 슬릿의 투과영역은 상기 마스크에 다수의 블록 형태로 형성되는 것을 특징으로 하는 레이저 결정화방법.
- 제 10 항에 있어서, 상기 슬릿의 투과영역은 블록 형태로 이웃하는 투과영역과 엇갈리게 형성되는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 슬릿의 에지부는 결정화된 실리콘 박막의 볼록한 에지부 형태에 대해 반전된 오목한 형태로 형성되는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 결정화는 수평 결정화인 것을 특징으로 하는 레이저 결정화방법.
- 제 13 항에 있어서, 상기 결정화는 순차적 수평 결정화인 것을 특징으로 하는 레이저 결정화방법.
- 제 14 항에 있어서, 상기 순차적 수평 결정화는 PDE를 적용한 순차적 수평결정화인 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 레이저 마스크를 이용하여 결정화한 결과 결정화된 실리콘 박막의 에지부는 라운드영역이 감소하게 되는 것을 특징으로 하는 레이저 결정화방법.
- 제 16 항에 있어서, 상기 에지부의 라운드영역이 감소하여 결정화특성이 다른 불연속영역이 감소하게 되는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 레이저 마스크를 이용하여 한 회의 레이저빔을 조사 한 후 상기 레이저 마스크 또는 스테이지를 X축 방향 또는 Y축 방향으로 소정의 거리만큼 이동하는 것을 특징으로 하는 레이저 결정화방법.
- 제 18 항에 있어서, 상기 레이저 마스크 또는 스테이지는 상기 슬릿 패턴이 결정화된 실리콘 박막의 불연속영역에 겹쳐지도록 X축 방향으로 이동하는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 레이저 결정화방법으로 결정화된 다결정 실리콘 액티브층, 상기 액티브층 위에 게이트절연막을 개재하여 형성된 게이트전극, 상기 게이트전극 위에 콘택홀을 포함하여 형성된 층간절연막 및 상기 콘택홀을 통해 액티브층의 소정영역과 전기적으로 접속하는 소오스/드레인전극을 포함하는 액정표시소자.
- 제 20 항에 있어서, 상기 액티브층의 소정영역에 인과 같은 5족 원소를 주입하여 N 타입의 소오스/드레인영역을 형성하는 것을 특징으로 하는 액정표시소자.
- 제 20 항에 있어서, 상기 액티브층의 소정영역에 붕소와 같은 3족 원소를 주입하여 P 타입의 소오스/드레인영역을 형성하는 것을 특징으로 하는 액정표시소자.
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KR1020030096872A KR100595455B1 (ko) | 2003-12-24 | 2003-12-24 | 레이저 마스크 및 이를 이용한 결정화방법 |
US11/016,782 US7569307B2 (en) | 2003-12-24 | 2004-12-21 | Laser mask and crystallization method using the same |
US12/495,377 US7816196B2 (en) | 2003-12-24 | 2009-06-30 | Laser mask and crystallization method using the same |
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Cited By (5)
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KR20070054323A (ko) * | 2005-11-23 | 2007-05-29 | 삼성에스디아이 주식회사 | 스크린 인쇄용 마스크, 이를 이용한 스크린 인쇄방법, 유기발광 표시장치의 제조방법, 및 유기 발광 표시장치 |
KR100742380B1 (ko) * | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법 |
KR100815957B1 (ko) * | 2006-09-06 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 포토 마스크 |
US7476475B2 (en) | 2006-05-09 | 2009-01-13 | Samsung Electronics Co., Ltd. | Mask for sequential lateral solidification and method of performing sequential lateral solidification using the same |
US8952289B2 (en) | 2012-04-24 | 2015-02-10 | Samsung Display Co., Ltd. | Laser crystallization apparatus and method for manufacturing thin film transistor array panel using the same |
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KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
US6792029B2 (en) * | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
KR100595455B1 (ko) * | 2003-12-24 | 2006-06-30 | 엘지.필립스 엘시디 주식회사 | 레이저 마스크 및 이를 이용한 결정화방법 |
TWI299431B (en) * | 2005-08-23 | 2008-08-01 | Au Optronics Corp | A mask for sequential lateral solidification (sls) process and a method thereof |
JP2009135448A (ja) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
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KR100558678B1 (ko) * | 2001-06-01 | 2006-03-10 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 결정화방법 |
KR100646160B1 (ko) * | 2002-12-31 | 2006-11-14 | 엘지.필립스 엘시디 주식회사 | 순차측면결정화를 위한 마스크 및 이를 이용한 실리콘결정화 방법 |
KR100595455B1 (ko) * | 2003-12-24 | 2006-06-30 | 엘지.필립스 엘시디 주식회사 | 레이저 마스크 및 이를 이용한 결정화방법 |
KR100698056B1 (ko) * | 2003-12-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 레이저 빔 패턴 마스크 및 이를 이용한 결정화 방법 |
-
2003
- 2003-12-24 KR KR1020030096872A patent/KR100595455B1/ko active IP Right Grant
-
2004
- 2004-12-21 US US11/016,782 patent/US7569307B2/en active Active
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2009
- 2009-06-30 US US12/495,377 patent/US7816196B2/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070054323A (ko) * | 2005-11-23 | 2007-05-29 | 삼성에스디아이 주식회사 | 스크린 인쇄용 마스크, 이를 이용한 스크린 인쇄방법, 유기발광 표시장치의 제조방법, 및 유기 발광 표시장치 |
KR100742380B1 (ko) * | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법 |
US8076187B2 (en) | 2005-12-28 | 2011-12-13 | Samsung Mobile Display Co., Ltd. | Mask pattern, method of fabricating thin film transistor, and method of fabricating organic light emitting display device using the same |
US7476475B2 (en) | 2006-05-09 | 2009-01-13 | Samsung Electronics Co., Ltd. | Mask for sequential lateral solidification and method of performing sequential lateral solidification using the same |
KR100815957B1 (ko) * | 2006-09-06 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 포토 마스크 |
US8952289B2 (en) | 2012-04-24 | 2015-02-10 | Samsung Display Co., Ltd. | Laser crystallization apparatus and method for manufacturing thin film transistor array panel using the same |
Also Published As
Publication number | Publication date |
---|---|
US7569307B2 (en) | 2009-08-04 |
US20090263978A1 (en) | 2009-10-22 |
KR100595455B1 (ko) | 2006-06-30 |
US7816196B2 (en) | 2010-10-19 |
US20050142453A1 (en) | 2005-06-30 |
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