KR20050034426A - 유기 전계 발광 표시 장치 - Google Patents
유기 전계 발광 표시 장치 Download PDFInfo
- Publication number
- KR20050034426A KR20050034426A KR1020030070337A KR20030070337A KR20050034426A KR 20050034426 A KR20050034426 A KR 20050034426A KR 1020030070337 A KR1020030070337 A KR 1020030070337A KR 20030070337 A KR20030070337 A KR 20030070337A KR 20050034426 A KR20050034426 A KR 20050034426A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- protruding structure
- light emitting
- layer
- organic light
- Prior art date
Links
- 238000005401 electroluminescence Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000443 aerosol Substances 0.000 claims description 3
- 229910003471 inorganic composite material Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 절연 기판 상에 형성된 돌출 구조막과;상기 돌출 구조막을 포함한 기판 상에 돌출 구조로 형성된 제 1 전극과;상기 제 1 전극 상에 형성된 유기 발광층과;상기 절연 기판 상에 형성된 제 2 전극을 포함하며,상기 제 2 전극은 상기 돌출 구조막에 의하여 돌출된 형태로 형성되어, 상기 유기 발광층을 둘러싸는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1 항에 있어서,상기 제 2 전극의 일부분은 상기 제 1 전극의 평평한 영역의 하부 면보다 아래에 위치하는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1항에 있어서,상기 돌출 구조막은 상기 제 1 전극과 굴절률의 차이가 적은 물질로 이루어지는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 3항에 있어서,상기 돌출 구조막은 굴절률이 1.0 내지 1.7인 물질로 이루어지는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1항에 있어서,상기 돌출 구조막은 BCB, 아크릴계 경화수지, 페놀계 경화수지 또는 폴리이미드로 이루어지는 군에서 선택되는 하나의 유기 물질로 이루어지는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1 항에 있어서,상기 돌출 구조막은 실리콘 산화물 또는 실리콘 질화물 중 하나로 이루어지는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1항에 있어서,상기 돌출 구조막은 오모서(Ormocer), 에어로졸(Aerosol) 또는 다공성 이산화규소(Porous silica)의 유무기 복합 재료로 이루어지는 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1항에 있어서,상기 돌출 구조막은 300㎚ 내지 10㎛의 두께인 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1항에 있어서,상기 돌출 구조막은 경사도가 15° 내지 70°인 것을 특징으로 하는 유기 전계 발광 표시 장치.
- 제 1 항에 있어서,상기 유기 발광층은 화소 정의막에 의하여 일부분이 노출된 상기 제 1 전극 상부에 형성되며,상기 화소 정의막의 두께는 상기 돌출 구조막의 두께보다 낮은 것을 특징으로 하는 유기 전계 발광 표시 장치.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030070337A KR100552971B1 (ko) | 2003-10-09 | 2003-10-09 | 유기 전계 발광 표시 장치 |
US10/959,975 US7298082B2 (en) | 2003-10-09 | 2004-10-08 | Organic electroluminescent display device with projecting structure layer |
CNB2004101023242A CN100425104C (zh) | 2003-10-09 | 2004-10-09 | 有机电致发光显示器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030070337A KR100552971B1 (ko) | 2003-10-09 | 2003-10-09 | 유기 전계 발광 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050034426A true KR20050034426A (ko) | 2005-04-14 |
KR100552971B1 KR100552971B1 (ko) | 2006-02-15 |
Family
ID=34420581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030070337A KR100552971B1 (ko) | 2003-10-09 | 2003-10-09 | 유기 전계 발광 표시 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7298082B2 (ko) |
KR (1) | KR100552971B1 (ko) |
CN (1) | CN100425104C (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7990047B2 (en) * | 2005-10-28 | 2011-08-02 | Samsung Electronics Co., Ltd. | Organic light emitting diode display and method of manufacturing the same |
JP4678421B2 (ja) * | 2008-05-16 | 2011-04-27 | ソニー株式会社 | 表示装置 |
CN105678255B (zh) * | 2016-01-04 | 2019-01-08 | 京东方科技集团股份有限公司 | 一种光学式指纹识别显示屏及显示装置 |
CN107086240B (zh) * | 2017-04-21 | 2021-01-22 | 京东方科技集团股份有限公司 | 有机电致发光显示器件及其制备方法、掩膜版和显示装置 |
KR102319256B1 (ko) * | 2017-06-30 | 2021-10-29 | 엘지디스플레이 주식회사 | 유기발광 표시패널 및 이의 제조방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW484238B (en) * | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
TW516164B (en) * | 2000-04-21 | 2003-01-01 | Semiconductor Energy Lab | Self-light emitting device and electrical appliance using the same |
US6489638B2 (en) * | 2000-06-23 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2002202737A (ja) | 2000-12-28 | 2002-07-19 | Nec Corp | 発光素子の製造方法、発光素子 |
JP2003068472A (ja) * | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 有機発光素子およびそれを用いた有機発光表示装置 |
JP2003133070A (ja) * | 2001-10-30 | 2003-05-09 | Seiko Epson Corp | 積層膜の製造方法、電気光学装置、電気光学装置の製造方法、有機エレクトロルミネッセンス装置の製造方法、及び電子機器 |
US7109655B2 (en) * | 2002-12-26 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
JP4401657B2 (ja) * | 2003-01-10 | 2010-01-20 | 株式会社半導体エネルギー研究所 | 発光装置の製造方法 |
-
2003
- 2003-10-09 KR KR1020030070337A patent/KR100552971B1/ko active IP Right Grant
-
2004
- 2004-10-08 US US10/959,975 patent/US7298082B2/en active Active
- 2004-10-09 CN CNB2004101023242A patent/CN100425104C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN100425104C (zh) | 2008-10-08 |
CN1620217A (zh) | 2005-05-25 |
KR100552971B1 (ko) | 2006-02-15 |
US7298082B2 (en) | 2007-11-20 |
US20050077819A1 (en) | 2005-04-14 |
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