KR20050025810A - Method for fabricating liquid crystal display device improving process of making thin film transistor - Google Patents

Abstract

A method for manufacturing an LCD(Liquid Crystal Display) is provided to reduce the number of masks by forming a gate electrode and an active pattern through a single photolithography process. A method comprises a step of providing a substrate(110); a step of sequentially depositing a silicon thin film, an insulation film(115a), and a gate metal(121a) on the substrate; a step of forming a first photosensitive film pattern on the substrate; a step of forming an active pattern(124) by patterning the gate metal, insulation film, and the silicon thin film by using the first photosensitive film pattern as a mask; a step of forming a second photosensitive film(170a) pattern by removing a certain part of the first photosensitive film pattern; a step of forming a gate electrode and a gate insulation film pattern by patterning the gate metal and the first insulation film by using the second photosensitive film pattern as a mask; a step of depositing an n+ amorphous silicon thin film and a conductive metal on the substrate; a step of forming a source/drain electrode on the active pattern by patterning the conductive metal and the n+ amorphous silicon thin film; and a step forming a pixel electrode connected to the drain electrode on the substrate.

Description

Manufacturing method of liquid crystal display device with improved thin film transistor manufacturing process {METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE IMPROVING PROCESS OF MAKING THIN FILM TRANSISTOR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a method for manufacturing a liquid crystal display (LCD) in which the number of masks used is reduced by improving a manufacturing process of a thin film transistor (TFT). It is about.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display of the flat panel display device is an image representing the image using the optical anisotropy of the liquid crystal, and has been actively applied to notebooks and desktop monitors because of its excellent resolution, color display and image quality.

1 is a perspective view schematically illustrating a general liquid crystal display device.

As shown in the figure, the liquid crystal display device is largely a color filter substrate 5 as a first substrate and an array substrate 10 as a second substrate, and the color filter substrate 5 and an array substrate. It consists of a liquid crystal layer 40 formed between (10).

The color filter substrate 5 distinguishes between a color filter 7 including a sub-color filter (red, green, blue) that implements color and the sub-color filter, and transmits light passing through the liquid crystal layer 40. It is composed of a black matrix (6) for blocking the, and a transparent common electrode (8) for applying a voltage to the liquid crystal layer (40).

In addition, the array substrate 10 includes a pixel electrode 18 formed on the pixel region P, a gate line 16 and a data line 17 vertically and horizontally arranged on the substrate 10, and the gate line 16. ) And a thin film transistor 20 which is a switching element formed at an intersection region of the data line 17.

In this case, the pixel region P is a region defined by the intersection of the gate line 16 and the data line 17, and the pixel electrode 18 formed on the pixel region P is formed of indium-tin-oxide ( Transparent conductive material with excellent light transmittance, such as indium tin oxide (ITO), is used.

The color filter substrate 5 and the array substrate 10 configured as described above are bonded to each other by a sealant to form a liquid crystal display panel, and the bonding of the two substrates is formed on the color filter substrate 5 or the array substrate 10. It is made through a bonding key (not shown).

On the other hand, the manufacturing process of the liquid crystal display device basically requires a number of mask processes (ie, photolithography process) for the fabrication of an array substrate including a thin film transistor, reducing the number of mask processes in terms of productivity A method is required.

Hereinafter, a manufacturing process of a conventional liquid crystal display device will be described in detail with reference to FIGS. 2A to 2G.

2A to 2G are flowcharts illustrating a manufacturing process of the liquid crystal display shown in FIG. 1, and illustrating a manufacturing process of an array substrate including a thin film transistor.

First, as shown in FIG. 2A, a gate electrode 21 is formed on a substrate 10 made of a transparent insulating material such as glass. The gate electrode 21 is formed by depositing a gate metal on the entire surface of the substrate 10 using a photolithography process.

Next, as shown in FIG. 2B, the first insulating film 15a, the amorphous silicon thin film 24a, and the n + amorphous silicon thin film 25, which are the gate insulating films, are deposited on the entire surface of the substrate on which the gate electrode 21 is formed. do. The amorphous silicon thin film 24a is patterned and used as an active layer of a thin film transistor, and the n + amorphous silicon thin film 25 is used for ohmic contact between a source / drain electrode and a source / drain region of the active layer. Form.

Next, as shown in FIG. 2C, the gate insulating film 15 and the active pattern are patterned by patterning the first insulating film 15a, the amorphous silicon thin film 24a, and the n + amorphous silicon thin film 25 using a photolithography process. To form (24).

Thereafter, as illustrated in FIG. 2D, a conductive metal 30 for source / drain electrodes is deposited on the entire surface of the substrate 10.

Next, as shown in FIG. 2E, the source metal 22 and the drain electrode 23 are formed by patterning the conductive metal 30 using a photolithography process. After that, the n + amorphous silicon thin film 25 is etched using the source / drain electrodes 22 and 23 as a mask until the active pattern 24 is exposed.

Next, as shown in FIG. 2F, after the second insulating layer 15b is deposited on the entire surface of the substrate 10, the contact hole 40 exposing a part of the drain electrode 23 is exposed through a photolithography process. Form.

Lastly, as shown in FIG. 2G, a transparent conductive material such as indium tin oxide is deposited on the entire surface of the substrate 10 on which the second insulating layer 15b is formed, and then the contact hole is formed using a photolithography process. A pixel electrode 18 connected to the drain electrode 23 is formed through 40.

As described above, fabrication of an array substrate including a thin film transistor requires a large number of photolithography processes such as gate electrode formation, active pattern formation, source / drain electrode formation, contact hole formation, and pixel electrode formation.

The photolithography process is a series of processes in which a pattern drawn on a mask is transferred onto a substrate on which a thin film is deposited to form a desired pattern. The photolithography process includes a plurality of processes such as photoresist coating, exposure, and development. As a result, there is a problem that the production yield is lowered and the probability of generating a defect in the formed thin film transistor is increased.

In particular, the mask designed to form the pattern is very expensive, there is a problem that the manufacturing cost of the liquid crystal display device increases in proportion to the increase in the number of masks applied to the process.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method of manufacturing a liquid crystal display device in which a manufacturing process and a cost are reduced by forming a gate electrode and an active pattern in one mask process using an etching technique of a photosensitive film. have.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, the manufacturing method of the liquid crystal display device of the present invention comprises the steps of providing a first substrate, depositing a silicon thin film, a first insulating film and a gate metal on the first substrate in sequence, the first Forming a first photoresist pattern on a substrate, patterning the gate metal, the first insulating film, and an amorphous silicon thin film using the first photoresist pattern as a mask to form an active pattern, and partially removing the first photoresist pattern Forming a photoresist pattern, forming a gate electrode and a gate insulating pattern by patterning a gate metal and a first insulating layer using the second photoresist pattern as a mask, and forming an n + amorphous silicon thin film and a conductive metal on the entire surface of the first substrate Depositing and patterning the conductive metal and the n + amorphous silicon thin film to source / deposit the active pattern Forming an exhibition pole and forming a pixel electrode connected to the drain electrode on the first substrate.

The method of claim 1, further comprising: bonding the first substrate to a second substrate which is a color filter substrate.

The forming of the first photoresist pattern may include applying a photoresist to the entire surface of the first substrate and exposing and developing the photoresist using an active pattern mask, and forming the second photoresist pattern. The method may include forming a second photoresist pattern by etching a portion of the first photoresist pattern.

The silicon thin film may be an amorphous silicon thin film or a crystallized silicon thin film, and after forming the gate electrode, using the gate electrode as a mask, implanting low concentration impurity ions into a predetermined region of an active pattern to form an LED region It may further include.

In addition, another method of manufacturing a liquid crystal display device of the present invention comprises the steps of providing a substrate, depositing a silicon thin film, a first insulating film and a gate metal on the substrate in sequence, forming a photoresist pattern on the substrate, the photosensitive film Patterning the gate metal, the first insulating film, and the amorphous silicon thin film using a pattern as a mask to form an active pattern, over-etching the gate metal to form a gate electrode, removing the photoresist pattern, and removing the gate pattern Patterning the first insulating layer using an electrode as a mask to form a gate insulating layer pattern, forming a source / drain electrode on the active pattern, and forming a pixel electrode on the substrate.

In another aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method including: providing a substrate, depositing a silicon thin film, a first insulating film, and a gate metal on the substrate in turn, forming a photoresist pattern on the substrate; Forming a gate electrode by over-etching a gate metal, patterning a first insulating layer and a silicon thin film using the photoresist pattern as a mask to form a gate insulating layer pattern and an active pattern, and forming a source / drain electrode on the active pattern And forming a pixel electrode on the substrate.

Over-etching of the gate metal may be performed by a wet etching method.

Hereinafter, the present invention will be described in detail.

The active matrix (AM) method, which is a driving method mainly used in a liquid crystal display, is a method of driving a liquid crystal of a pixel part using a thin film transistor as a switching element.

In addition, the thin film transistor may be classified into an amorphous silicon thin film transistor, a microcrystalline silicon thin film transistor, or a polycrystalline silicon thin film transistor according to the material state of the active layer.

On the other hand, fabrication of an array substrate, including thin film transistors, requires a large number of photolithography processes, and many photolithography processes cause problems that increase manufacturing processes and costs.

In order to solve the above problems, it is particularly important to improve the manufacturing process of the thin film transistor so as to reduce the number of photolithography processes, that is, the number of masks used.

Accordingly, the present invention provides a method of manufacturing a liquid crystal display device which improves the manufacturing process of a thin film transistor by forming a gate electrode and an active pattern in one mask process using an etching technique of a photosensitive film.

That is, after the gate electrode or the active pattern is formed using the first photoresist pattern, the remaining pattern is formed by using the second photoresist pattern, from which a part of the first photoresist pattern is removed. In this case, one mask used to form the gate electrode and the active pattern is used to form the first photoresist layer pattern.

Alternatively, the gate electrode and the active pattern may be formed in one mask process using the gate electrode over-etching technique instead of the photoresist etching technique.

Hereinafter, exemplary embodiments of a method of manufacturing a liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

3A to 3J are flowcharts illustrating a manufacturing process of a liquid crystal display according to a first exemplary embodiment of the present invention, and illustrating a manufacturing process of an array substrate including an amorphous silicon thin film transistor.

First, as shown in FIG. 3A, a buffer layer 111 made of a silicon oxide film (SiO ₂ ) or the like is formed on a substrate 110 made of a transparent insulating material such as glass. The buffer layer 111 serves to block impurities such as sodium (natrium) from the glass substrate 110 from penetrating into the upper layer during the process.

Next, as shown in FIG. 3B, an amorphous silicon thin film 124a, a first insulating layer 115a, and a gate metal 121a are sequentially deposited on the buffer layer 111. The first insulating film 115a may be formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film (SiN _x ), and the gate metal 121a may be formed of molybdenum (Mo), aluminum (Al), aluminum alloy, or the like. It can be configured as.

3C, a first photoresist pattern 170 including a gate electrode pattern is formed on the resultant. The first photoresist layer pattern 170 is formed by applying a photoresist such as a photoresist to the entire surface of the substrate 110 and then exposing and developing the photoresist using an active pattern mask.

Next, as shown in FIG. 3D, the gate metal 121a, the first insulating layer 115a, and the amorphous silicon thin film 124a are sequentially etched using the first photoresist layer pattern 170 as a mask. 124 is formed.

For reference, the etching technique is a method of implementing a desired thin film pattern by selectively removing the thin film according to the pattern formed by the photoresist using a physical or chemical reaction, leaving the thin film of the portion where the photoresist pattern is formed. The thin film in the portion without the photoresist is removed. The etching process includes a dry etching method using gas plasma and a wet etching method using a chemical solution.

In this case, wet etching or dry etching may be used for etching the thin films 121a, 115a, and 124a, but a dry etching method is used to form a pattern that matches the photoresist pattern 170. The plasma etching method exhibiting the isotropic etching characteristic of the dry etching has the advantage of less physical impact due to less impact on the underlying layer and selective etching.

Next, as shown in FIG. 3E, a process of removing a part of the first photoresist pattern 170 is performed.

A method of removing a portion of the first photoresist layer pattern 170 may be performed through an ashing technique of the photoresist layer, and the etching process refers to a process of oxidizing and blowing the photoresist layer using a gas containing oxygen. At this time, the first photoresist pattern 170 is partially controlled while being precisely controlled by the etching method to form the second photoresist pattern 170a.

Next, as shown in FIG. 3F, the gate metal 121 and the gate insulating film 115 are patterned by patterning the gate metal 121a and the first insulating film 115a using the second photoresist pattern 170a as a mask. To form. Thereafter, the second photoresist pattern 170a is completely removed through a photoresist etching process and a strip process.

Next, as illustrated in FIG. 3G, an n + amorphous silicon thin film 125 and a conductive metal 130 for source / drain electrodes are sequentially deposited on the resultant.

The n + amorphous silicon thin film 125 is formed for ohmic contact between the source / drain electrodes and the source / drain regions 122a and 123a of the active pattern 124, and the conductive metal 130 is made of aluminum or an aluminum alloy. , Tungsten (W), copper (Cu), chromium (Cr), and molybdenum.

Thereafter, as illustrated in FIG. 3H, the source metal 122 and the drain electrode 123 are formed by patterning the conductive metal 130 using a photolithography process. At this time, the conductive metal 130 and the n + amorphous silicon thin film 125 of portions other than the source / drain electrodes 122 and 123 patterns are completely removed.

Next, as illustrated in FIG. 3I, a transparent conductive material such as indium tin oxide is deposited on the resultant, and then the pixel electrode 118 is formed through a photolithography process. In this case, wet etching may be used as an etching method. Oxylic acid used for etching the pixel electrode 118 does not affect the active pattern 124 or the source / drain electrodes 122 and 123. Only the indium-tin-oxide is effectively etched away.

Finally, as shown in FIG. 3J, a second insulating film 115b including an inorganic insulating film or an organic insulating film for planarization is formed on the entire surface of the substrate 110.

Using the photosensitive film pattern and the etching technique as described above, the gate electrode and the active pattern can be formed in one mask process, that is, one photolithography process, and as a result, the manufacturing process and the cost can be reduced. do.

At this time, in the present embodiment, the process was performed in the order of forming the active electrode using the photoresist pattern, and then forming the gate electrode with the photoresist pattern. However, the present invention is not limited thereto. Another embodiment of forming the active pattern will be described below.

First, FIGS. 4A to 4D are flowcharts illustrating a manufacturing process of a liquid crystal display according to a second exemplary embodiment of the present invention, and illustrate a manufacturing process of a gate electrode and an active pattern.

In this case, the second embodiment has the same manufacturing process as the manufacturing method of the liquid crystal display of the first embodiment shown in FIG. 3 except for the procedure of forming the gate electrode and the active pattern. Therefore, a description of the same manufacturing process as the manufacturing method of the liquid crystal display shown in FIG. 3 will be omitted, and only the new manufacturing process shown in the present embodiment (ie, FIGS. 4A to 4D corresponding to FIGS. 3C to 3F) will be omitted. Explain only.

As shown in FIG. 4A, after the buffer film 211, the amorphous silicon thin film 224a, the first insulating film 215a, and the gate metal 221a are sequentially deposited on the substrate 210, a photolithography process is used. The photoresist pattern 270 including the gate electrode pattern is formed.

Next, as shown in FIG. 4B, the gate metal 221a is over-etched to form a gate electrode 221 smaller than the photoresist pattern 270.

The etching of the metal layer may be either wet etching or dry etching, but when using the isotropic etching characteristic of the wet etching, a tapered gate electrode 221 is advantageous for preventing a short circuit of various layers formed on the gate electrode 221. Can be formed. The wet etching is a method of removing a thin film in accordance with a photoresist pattern using a chemical solution, and has advantages such as good selectivity, etching uniformity at a large area, and low cost.

Another reason for using wet etching in the present invention is that the gate electrode 221 having a pattern smaller than the photoresist pattern 270 may be formed only by using wet etching using a chemical solution.

Next, as shown in FIG. 4C, the active pattern 224 is formed by patterning the first insulating layer 215a and the amorphous silicon thin film 224a using the photoresist pattern 270 as a mask.

Next, as shown in FIG. 4D, after the photoresist pattern 270 is completely removed through the photoresist etching process and the strip process, the first insulating layer 215a is formed using the gate electrode 221 formed by over-etching as a mask. ) Is formed to form a gate insulating film 215.

Thereafter, the remaining processes are performed in the same order as the process illustrated in FIGS. 3G to 3J.

5A to 5D are flowcharts illustrating a manufacturing process of a liquid crystal display according to a third exemplary embodiment of the present invention, which illustrates a method of forming a gate electrode by over-etching after forming an active pattern.

In this case, a description of the same manufacturing process as the manufacturing method of the liquid crystal display shown in FIG. 3 will be omitted, and only the new manufacturing process shown in the present embodiment (that is, FIGS. 5A to 5D corresponding to FIGS. 3C to 3F) will be omitted. Explain only about.

First, as shown in FIG. 5A, a buffer film 311, an amorphous silicon thin film 324a, a first insulating film 315a, and a gate metal 321a are sequentially deposited on the substrate 310, and then a photolithography process The photoresist pattern 370 including the gate electrode pattern is formed using the C-type electrode.

Next, as shown in FIG. 5B, the active pattern 324 is formed by patterning the gate metal 321a, the first insulating layer 315a, and the amorphous silicon thin film 324a using the photoresist pattern 370 as a mask. Form.

Next, as shown in FIG. 5C, the gate electrode 321 is formed by over-etching using wet etching.

Next, as shown in FIG. 5D, after the photoresist pattern 370 is completely removed, the first insulating layer 215a is patterned by using the gate electrode 321 formed by over-etching as a mask. 215).

Thereafter, the remaining processes are performed in the same order as the process illustrated in FIGS. 3G to 3J.

As described above, in the second and third embodiments, the gate electrode and the active pattern may be formed without using an additional mask process by using over-etching of the photoresist pattern and the gate electrode.

In the first to third embodiments, an amorphous silicon thin film is used as a channel layer of the thin film transistor. However, a peripheral circuit requiring high-speed operation of 1 MHz or more in terms of electrical mobility (˜1 cm ² / Vsec) of the amorphous silicon thin film transistor. There is a limit to use. Accordingly, studies are being actively conducted to simultaneously integrate a pixel portion and a driving circuit portion on a glass substrate using a polycrystalline silicon thin film transistor having a larger field effect mobility than the amorphous silicon thin film transistor.

Polycrystalline silicon thin film transistor technology has been applied to small modules such as camcorders since liquid crystal color television was developed in 1982, and has the advantage of being able to manufacture driving circuits directly on the board because of its low sensitivity and high field effect mobility. .

Increasing the mobility may improve the operating frequency of the driving circuit unit that determines the number of driving pixels, thereby facilitating high definition of the display device. In addition, due to the reduction in the charging time of the signal voltage of the pixel portion, the distortion of the transmission signal may be reduced, thereby improving image quality.

In addition, the polycrystalline silicon thin film transistor can be driven at less than 10V compared to the amorphous silicon thin film transistor having a high driving voltage (˜25V) has the advantage that the power consumption can be reduced.

Hereinafter, a manufacturing process of an array substrate including a polycrystalline silicon thin film transistor will be described in detail.

6A to 6K are flowcharts illustrating a manufacturing process of a liquid crystal display according to a fourth exemplary embodiment of the present invention.

First, as shown in FIG. 6A, a buffer film 411 made of a silicon oxide film or the like is formed on a substrate 410 made of a transparent insulating material such as glass.

Next, as shown in FIG. 6B, a polycrystalline silicon thin film 424a is formed on the buffer film 411. The polycrystalline silicon thin film 424a may be formed through a crystallization process after depositing an amorphous silicon thin film on the buffer layer 411.

Here, the amorphous silicon thin film may be formed using various methods, and representative methods include low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD). There is this. In the case of depositing the amorphous silicon thin film by the plasma chemical vapor deposition method, although the temperature varies slightly depending on the temperature of the substrate during deposition, about 20% of hydrogen atoms are included in the amorphous silicon thin film to anneal to discharge the hydrogen atoms to the outside. The dehydrogenation process, a process, must be carried out as essential.

As a method of crystallizing the amorphous silicon thin film into a polycrystalline silicon thin film, a solid phase crystallization (SPC) method for thermally treating the amorphous silicon thin film in a high temperature furnace and an excimer laser annealing using an laser (ELA) There is a way.

Next, as shown in FIG. 6C, a first insulating film 415a and a gate metal 421a, which are gate insulating films, are sequentially deposited on the polycrystalline silicon thin film 424a.

Thereafter, as illustrated in FIG. 6D, the first photoresist layer pattern 470 including the gate electrode pattern is formed on the substrate on which the gate metal 421a is deposited. The first photoresist layer pattern 470 is formed by applying a photoresist as a photoresist on the entire surface of the substrate 410 and then performing an exposure and development process using an active pattern mask.

6E, the active pattern 424 is formed by patterning the gate metal 421a, the first insulating layer 415a, and the polycrystalline silicon thin film 424a using the first photoresist pattern 470 as a mask. To form.

Next, as shown in FIG. 6F, a process of removing a portion of the first photoresist pattern 470 is performed. At this time, the first photoresist pattern 470 is precisely controlled by the method such as etching, and a part thereof is removed to form the second photoresist pattern 470a.

6G, the gate electrode 421 and the gate insulating layer 415 are formed by patterning the gate metal 421a and the first insulating layer 415a using the second photoresist pattern 470a as a mask. Form. Thereafter, the second photoresist layer pattern 470a is completely removed through a photoresist etching process and a strip process.

In the present embodiment, the gate electrode and the active pattern are formed using the same method as in the first embodiment, but the gate electrode and the active pattern may be formed by the method used in the second or third embodiment.

Thereafter, lightly doped drain (LDD) regions 422l and 423l are formed in the active pattern 424 by implanting low concentration impurity ions into the active pattern 424 using the gate electrode 421 as a mask. do. The LED areas 422l and 423l are formed by implanting n- or p- impurity ions into a predetermined region of the active pattern in order to reduce a current leaking into the channel layer of the thin film transistor in the off state.

As described above, the LED region may be formed to reduce the leakage current of the thin film transistor, but the same effect may be obtained when the offset region is formed by omitting the impurity implantation process.

Next, as illustrated in FIG. 6H, an n + amorphous silicon thin film 425 and a conductive metal 430 are sequentially deposited on the resultant.

Thereafter, as illustrated in FIG. 6I, the source metal 422 and the drain electrode 423 are formed by patterning the conductive metal 430 using a photolithography process. At this time, the conductive metal 430 and the n + amorphous silicon thin film 425 of portions other than the source / drain electrodes 422 and 423 pattern are completely removed, and the source / drain regions 422a and 423a are formed in the active pattern 424. ) Is formed.

In the present embodiment, an n + amorphous silicon thin film 425 is deposited to form an ohmic contact between the source / drain electrodes 422 and 423 and the source / drain regions 422a and 423a of the active pattern 424. A method of implanting high concentration impurity ions into the source / drain regions 422a and 423a of the pattern 424 may be used. In this case, an N-type thin film transistor or a P-type thin film transistor may be formed according to the type of dopant to be injected.

6J and 6K, the second insulating layer 415b having the contact hole 430 exposing a part of the drain electrode 423 is formed on the resultant.

Thereafter, a transparent conductive material such as indium-tin-oxide is deposited to form a pixel electrode 418 connected to the contact hole 430 using a photolithography process.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

As described above, the manufacturing method of the liquid crystal display device of the present invention reduces the number of masks used by forming the gate electrode and the active pattern in one photolithography process, thereby providing the effect of reducing the manufacturing process and cost.

1 is a perspective view schematically showing a general liquid crystal display device.

2A to 2G are flowcharts illustrating a manufacturing process of the liquid crystal display shown in FIG. 1.

3A to 3J are flowcharts illustrating a manufacturing process of a liquid crystal display according to a first embodiment of the present invention.

4A to 4D are flowcharts illustrating a manufacturing process of a liquid crystal display according to a second exemplary embodiment of the present invention.

5A through 5D are flowcharts illustrating a manufacturing process of a liquid crystal display according to a third exemplary embodiment of the present invention.

6A to 6K are flowcharts illustrating a manufacturing process of a liquid crystal display according to a fourth exemplary embodiment of the present invention.

** Explanation of symbols for main parts of drawings **

110, 210, 310, 410: array substrate 115a, 215a, 315a, 415a: first insulating film

115,215,315,415 gate insulating films 115b, 215b, 315b, 415b second insulating films

121, 221, 321, 421: gate electrodes 121a, 221a, 321a, 421a: gate metal

122,222,322,422 Source electrodes 123,223,323,423 Drain electrodes

124,224,324,424: Active pattern 124a, 224a, 324a, 424a: Silicon thin film

125,225,325,425: n + amorphous silicon thin film

130,230,330,430: conductive metal 170,270,370,470: first photosensitive film pattern

170a, 470a: second photosensitive film pattern

Claims (11)

Providing a first substrate; Depositing a silicon thin film, a first insulating film, and a gate metal on the first substrate in sequence; Forming a first photoresist pattern on the first substrate; Patterning the gate metal, the first insulating layer, and the amorphous silicon thin film using the first photoresist pattern as a mask to form an active pattern; Removing a portion of the first photoresist pattern to form a second photoresist pattern; Patterning the gate metal and the first insulating layer using the second photoresist pattern as a mask to form a gate electrode and a gate insulating layer pattern; Depositing an n + amorphous silicon thin film and a conductive metal on the entire surface of the first substrate; Patterning the conductive metal and the n + amorphous silicon thin film to form a source / drain electrode on the active pattern; And Forming a pixel electrode connected to the drain electrode on the first substrate. The method of claim 1, further comprising: bonding the first substrate to a second substrate which is a color filter substrate. The method of claim 1, wherein the providing of the first substrate further comprises forming a buffer layer on the first substrate. The liquid crystal display of claim 1, wherein the forming of the first photoresist pattern comprises applying a photoresist to the entire surface of the first substrate and exposing and developing the photoresist using an active pattern mask. Method of manufacturing the device. The method of claim 1, wherein the forming of the second photoresist pattern comprises forming a second photoresist pattern by exposing a portion of the first photoresist pattern. The method of claim 1, wherein the silicon thin film is an amorphous silicon thin film. The method of claim 1, wherein the silicon thin film is a crystallized silicon thin film.  The liquid crystal display of claim 1, further comprising forming an LED area by implanting low concentration impurity ions into a predetermined region of an active pattern using the gate electrode as a mask after the gate electrode is formed. Manufacturing method. Providing a substrate; Depositing a silicon thin film, a first insulating film, and a gate metal on the substrate in sequence; Forming a photoresist pattern on the substrate; Patterning the gate metal, the first insulating layer, and the amorphous silicon thin film using the photoresist pattern as a mask to form an active pattern; Over-etching the gate metal to form a gate electrode; Removing the photoresist pattern; Patterning the first insulating layer using the gate electrode as a mask to form a gate insulating layer pattern; Forming a source / drain electrode on the active pattern; And And forming a pixel electrode on the substrate. Providing a substrate; Depositing a silicon thin film, a first insulating film, and a gate metal on the substrate in sequence; Forming a photoresist pattern on the substrate; Over-etching the gate metal to form a gate electrode; Patterning the first insulating film and the silicon thin film using the photoresist pattern as a mask to form a gate insulating film pattern and an active pattern; Forming a source / drain electrode on the active pattern; And And forming a pixel electrode on the substrate. The method of claim 9, wherein the over-etching of the gate metal is performed by a wet etching method.