KR20050020408A - Method for improving sensitivity of cmos image sensor - Google Patents
Method for improving sensitivity of cmos image sensor Download PDFInfo
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- KR20050020408A KR20050020408A KR1020030058341A KR20030058341A KR20050020408A KR 20050020408 A KR20050020408 A KR 20050020408A KR 1020030058341 A KR1020030058341 A KR 1020030058341A KR 20030058341 A KR20030058341 A KR 20030058341A KR 20050020408 A KR20050020408 A KR 20050020408A
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- image sensor
- forming
- cmos image
- photodiode
- layer
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- 230000035945 sensitivity Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000295 complement effect Effects 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 230000010354 integration Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
본 발명은 시모스(CMOS; complementary metal oxide semiconductor) 이미지 센서(image sensor)의 제조 방법에 관한 것으로서, 보다 상세하게는, 시모스 이미지 센서의 포토 다이오드 주위로 반사율이 높은 물질을 적용하여 포토 다이오드를 벗어나는 빛을 반사시켜 포토 다이오드 쪽으로 입사시킴으로써, 픽셀 크기의 증가 없이 감도(sensitivity)를 향상시키기 위한 시모스 이미지 센서의 감도 향상 방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, and more particularly, light exiting a photodiode by applying a material having a high reflectance around a photodiode of a CMOS image sensor. The present invention relates to a method for improving sensitivity of a CMOS image sensor by reflecting the light into a photodiode and improving the sensitivity without increasing the pixel size.
시모스 이미지 센서의 집적도를 높이기 위해서는 픽셀 크기를 감소시키는 것이 효율적이다. 그러나, 픽셀 사이즈를 감소시킬 경우 마이크로 렌즈의 반경 감소에 따른 초점 거리가 짧아지게 되고 포토 다이오드로 입사되는 빛의 양이 감소하게 된다. In order to increase the density of CMOS image sensors, it is efficient to reduce the pixel size. However, if the pixel size is reduced, the focal length according to the decrease of the radius of the microlens is shortened and the amount of light incident on the photodiode is reduced.
이럴 경우, 시모스 이미지 센서의 감도는 포토 다이오드로 입사되는 빛의 양에 비례하기 때문에 감도가 감소하게 되는 원인이 된다. In this case, since the sensitivity of the CMOS image sensor is proportional to the amount of light incident on the photodiode, the sensitivity is reduced.
따라서, 포토 다이오드로 입사되는 빛의 양을 최대화하는 방법이 요구된다. Thus, a need exists for a method of maximizing the amount of light incident on a photodiode.
본 발명은 상기와 같은 문제점을 해결하기 위해 창작된 것으로서, 본 발명의 주목적은 흔히 반도체 Al, Ti, W 및 Cu와 같은 금속 물질은 빛을 대부분 반사시키는 특성을 가지고 있는데, 포토 다이오드 주위에 이러한 반사 특성을 갖는 물질을 적용함으로써, 포토 다이오드를 벗어나는 빛을 반사시켜 다시 포토 다이오드를 집광할 수 있게 하여 감도를 향상시킬 수 있는 시모스 이미지 센서의 감도 향상 방법을 제공하는 것이다. The present invention was created to solve the above problems, and the main purpose of the present invention is that metal materials such as semiconductors Al, Ti, W, and Cu have the property of reflecting most of the light. By applying a material having a characteristic, it is possible to reflect the light leaving the photodiode and to condense the photodiode again to provide a method for improving the sensitivity of the CMOS image sensor that can improve the sensitivity.
또한, 본 발명은 픽셀 크기에 관계없이 빛의 집광성이 향상되어 높은 감도 특성을 유지할 수 있는 시모스 이미지 센서의 감도 향상 방법을 제공하는 것이다. In addition, the present invention is to provide a method of improving the sensitivity of the CMOS image sensor that can maintain the high sensitivity characteristics by improving the light condensation regardless of the pixel size.
상기와 같은 목적을 실현하기 위한 본 발명은 기판 상에 포토 다이오드를 형성하는 단계와, 프리메탈 유전체층을 형성한 후, 포토 다이오드를 개방하도록 소정의 트렌치 형상을 갖도록 프리메탈 유전층을 패터닝하는 단계와, 금속막을 트렌치의 측면에 증착하는 단계와, IMD 층, 패시베이션 층을 순차적으로 형성하는 단계와, 컬러 필터를 형성한 후, 포토레지스트와 같은 유기물질층을 평탄화층으로 형성하는 단계와, 평탄화층 상에 마이크로 렌즈를 형성하는 단계를 포함하는 것을 특징으로 하는 시모스 이미지 센서의 감도 향상 방법을 제공한다. The present invention for realizing the above object comprises the steps of forming a photodiode on a substrate, after forming a premetal dielectric layer, patterning the premetal dielectric layer to have a predetermined trench shape to open the photodiode; Depositing a metal film on the side of the trench, sequentially forming an IMD layer and a passivation layer, forming a color filter, and then forming an organic material layer such as a photoresist as a planarization layer; It provides a method for improving the sensitivity of the CMOS image sensor comprising the step of forming a micro lens.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 또한 본 실시예는 본 발명의 권리범위를 한정하는 것은 아니고, 단지 예시로 제시된 것이다. Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this embodiment is not intended to limit the scope of the present invention, but is presented by way of example only.
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 감도 향상 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view illustrating a method for improving sensitivity of a CMOS image sensor according to a preferred embodiment of the present invention.
도 1에 도시한 바와 같이, 시모스 이미지 센서 소자의 포토 다이오드(102) 주변에 반사 특성이 우수한 금속막(104)을 적용시키는 방법은 다음과 같다. As shown in FIG. 1, a method of applying the metal film 104 having excellent reflection characteristics around the photodiode 102 of the CMOS image sensor device is as follows.
먼저, 기판(100) 상에 포토 다이오드(102)를 형성하고, 그리고 나서 프리메탈 유전체층(108)을 형성한 후, 포토 다이오드(102)를 개방하도록 소정의 트렌치를 갖도록 상기 프리메탈 유전체층(108)을 패터닝한다. 이어서, 금속막(104)을 트렌치의 측면에 증착한다. 다음 단계로, 층간 유전체(IMD; inter metal dielectric) 층(110, 112), 패시베이션 층(114)을 순차적으로 형성한다. First, the photodiode 102 is formed on the substrate 100, and then the premetal dielectric layer 108 is formed, and then the premetal dielectric layer 108 has a predetermined trench to open the photodiode 102. Pattern. Next, a metal film 104 is deposited on the side of the trench. In the next step, interlayer dielectric (IMD) layers 110 and 112 and passivation layer 114 are sequentially formed.
이어서, 컬러 필터(118)를 형성한 후, 포토레지스트와 같은 유기물질층(116)을 평탄화층으로 형성한다. Subsequently, after the color filter 118 is formed, an organic material layer 116 such as a photoresist is formed as a planarization layer.
마지막으로, 마이크로 렌즈(120)를 형성한다. Finally, the micro lens 120 is formed.
본 발명의 바람직한 실시예에 따르면, 포토 다이오드(102) 주변에 금속막(104)을 형성함으로써, 마이크로 렌즈(120)로부터 포토 다이오드(102)로 입사되는 빛의 양을 최대화하여 시모스 이미지 센서의 감도를 최대화할 수 있다. According to a preferred embodiment of the present invention, by forming the metal film 104 around the photodiode 102, the sensitivity of the CMOS image sensor by maximizing the amount of light incident from the microlens 120 to the photodiode 102. Can be maximized.
또한, 본 발명의 바람직한 실시예에 따르면, 고집적화를 위한 픽셀 크기의 감소에 따른 즉, 마이크로 렌즈(120)의 반경 감소로 인한 초점 거리의 짧아짐으로 인한 감도의 특성의 저하를 방지할 수도 있다. In addition, according to a preferred embodiment of the present invention, it is possible to prevent the degradation of the sensitivity characteristics due to the reduction of the pixel size for high integration, that is, the shortening of the focal length due to the reduction of the radius of the microlens 120.
본 발명을 본 명세서 내에서 몇몇 바람직한 실시예에 따라 기술하였으나, 당업자라면 첨부한 특허 청구 범위에서 개시된 본 발명의 진정한 범주 및 사상으로부터 벗어나지 않고 많은 변형 및 향상이 이루어질 수 있다는 것을 알 수 있을 것이다. While the invention has been described in accordance with some preferred embodiments herein, those skilled in the art will recognize that many modifications and improvements can be made without departing from the true scope and spirit of the invention as set forth in the appended claims.
상기한 바와 같이, 본 발명은 시모스 이미지 센서 반도체 소자에 있어서, 포토 다이오드 주변에 반사율이 뛰어난 금속막을 형성하는 것으로써 마이크로 렌즈로부터 포토 다이오드로 입사되는 빛의 양을 최대화하여 감도를 향상시킬 수 있으며, 고집적화에 따른 픽셀 크기 감소시에도, 즉 마이크로 렌즈 크기에 관계 없이 높은 감도를 유지할 수 있는 효과가 있다. As described above, in the CMOS image sensor semiconductor device, by forming a metal film having excellent reflectance around the photodiode, the amount of light incident from the microlens to the photodiode can be maximized to improve sensitivity. Even when the pixel size is reduced due to the high integration, that is, the high sensitivity is maintained regardless of the microlens size.
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 감도 향상 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view illustrating a method for improving sensitivity of a CMOS image sensor according to a preferred embodiment of the present invention.
- 도면의 주요부분에 대한 부호의 설명 - -Explanation of symbols for the main parts of the drawings-
100 : 실리콘 기판 102 : 포토 다이오드100 silicon substrate 102 photodiode
104 : 금속막 106 : 필드 산화막104: metal film 106: field oxide film
108 : 프리메탈 유전체막 110, 112 : IMD 층108: premetal dielectric film 110, 112: IMD layer
114 : 패시베이션 116 : 평탄화층 114: passivation 116: planarization layer
118 : 컬러 필터 120 : 마이크로 렌즈 118: color filter 120: micro lens
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| KR1020030058341A KR20050020408A (en) | 2003-08-22 | 2003-08-22 | Method for improving sensitivity of cmos image sensor |
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| KR1020030058341A KR20050020408A (en) | 2003-08-22 | 2003-08-22 | Method for improving sensitivity of cmos image sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100683391B1 (en) * | 2005-04-29 | 2007-02-15 | 매그나칩 반도체 유한회사 | Cmos image sensor and method for fabricating the same |
| WO2021056988A1 (en) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | Integrated optical sensor and manufacturing method therefor |
-
2003
- 2003-08-22 KR KR1020030058341A patent/KR20050020408A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100683391B1 (en) * | 2005-04-29 | 2007-02-15 | 매그나칩 반도체 유한회사 | Cmos image sensor and method for fabricating the same |
| WO2021056988A1 (en) * | 2019-09-23 | 2021-04-01 | 神盾股份有限公司 | Integrated optical sensor and manufacturing method therefor |
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