KR20050020882A - Method for forming dielectic layer of cmos image sensor - Google Patents
Method for forming dielectic layer of cmos image sensor Download PDFInfo
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- KR20050020882A KR20050020882A KR1020030058342A KR20030058342A KR20050020882A KR 20050020882 A KR20050020882 A KR 20050020882A KR 1020030058342 A KR1020030058342 A KR 1020030058342A KR 20030058342 A KR20030058342 A KR 20030058342A KR 20050020882 A KR20050020882 A KR 20050020882A
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- layer
- forming
- dielectric layer
- photodiode
- image sensor
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000011368 organic material Substances 0.000 claims abstract description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 52
- 239000002184 metal Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 abstract description 4
- 230000000295 complement effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
Abstract
Description
본 발명은 시모스(CMOS; complementary metal oxide semiconductor) 이미지 센서(image sensor)의 제조 방법에 관한 것으로서, 보다 상세하게는, 시모스 이미지 센서의 유전층을 단일 필름으로 적용함으로써, 유전체 필름 계면 사이에서 발생되는 난반사를 없애주고 또한 상이한 굴절률로 인한 빛의 굴절을 최소화하여 감도(sensitivity)를 향상시키기 위한 시모스 이미지 센서의 유전층 형성 방법에 관한 것이다. The present invention relates to a method of manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, and more particularly, to diffuse reflection between dielectric film interfaces by applying a dielectric layer of a CMOS image sensor to a single film. The present invention relates to a method for forming a dielectric layer of a CMOS image sensor, to improve the sensitivity by eliminating light and minimizing the refraction of light due to different refractive indices.
시모스 이미지 센서 소자의 제조 공정, 특히 후공정(BEOL; back end of line)은 기존의 반도체 소자 제조 방법과 거의 동일하다. 이때, 프리메탈 유전체(PMD; pre-metal dielectric), 메탈간 유전체(IMD; inter metal dielectric) 및 패시베이션(passivation) 층으로 서로 상이한 유전체 물질이 적용되어야 하며 이로 인해 층간의 간섭(interface)에서 빛의 난반사 현상이 발생되어 감도 특성이 열화된다. The manufacturing process of the CMOS image sensor device, in particular, the back end of line (BEOL) is almost the same as the conventional method of manufacturing a semiconductor device. In this case, different dielectric materials should be applied to the pre-metal dielectric (PMD), inter-metal dielectric (IMD), and passivation layers, so that light of the light in the inter-layer interference may be applied. Diffuse reflection occurs and the sensitivity characteristic is degraded.
또한, 상이한 유전체 필름으로 인해 서로 다른 굴절률을 가지기 때문에 빛의 굴절에 의한 감도 특성이 열화되는 원인이 된다. 따라서, 유전체 층에 대한 감도 향상 방법이 요구된다. In addition, since different dielectric films have different refractive indices, the sensitivity characteristic due to the refraction of light is deteriorated. Therefore, there is a need for a method of improving sensitivity to dielectric layers.
본 발명은 상기와 같은 문제점을 해결하기 위해 창작된 것으로서, 본 발명의 주목적은 시모스 이미지 센서 소자 제조시 패시베이션 층을 형성한 후 포토 및 식각 공정을 통하여 포토 다이오드까지 식각한 후, 유전층을 증착함으로써 유전층을 단일층으로 형성할 수 있는 유전체층 형성방법을 제공하는 것이다. The present invention has been made to solve the above problems, and the main object of the present invention is to form a passivation layer in manufacturing a CMOS image sensor device, and then to the photodiode through photo and etching processes, and then to deposit a dielectric layer by depositing a dielectric layer It is to provide a dielectric layer forming method capable of forming a single layer.
또한, 본 발명은 PMD, IMD 및 패시베이션 층의 상이함으로 인한 계면에서의 난반사 현상을 억제하고 또한 층간의 다른 굴절률로 인한 빛의 굴절 현상을 최소화하여 이미지 센서 소자의 감도를 최대화할 수 있는 유전체층 형성방법을 제공하는 것이다. In addition, the present invention suppresses the diffuse reflection phenomenon at the interface due to the difference between the PMD, IMD and passivation layer, and minimize the refraction of light due to the different refractive index between the layers to maximize the sensitivity of the image sensor element To provide.
상기와 같은 목적을 실현하기 위한 본 발명은 기판 상에 포토 다이오드를 형성하는 단계와, 프리메탈 유전층을 형성한 후, IMD 층, 패시베이션 층을 순차적으로 형성하는 단계와, 패시베이션 층, IMD 층 및 프리메탈 유전층을 소정의 형상으로 패터닝하여 트렌치를 형성함으로써 상기 포토 다이오드를 개방하는 단계와, 트렌치를 단일 유전층으로 충진하는 단계와, 컬러 필터를 형성한 후, 포토레지스트와 같은 유기물질층을 평탄화층으로 형성하는 단계와, 평탄화층 상에 마이크로 렌즈를 형성하는 단계를 포함하는 것을 특징으로 하는 시모스 이미지 센서의 유전층 형성방법을 제공한다. The present invention for realizing the above object comprises the steps of forming a photodiode on a substrate, and after forming a premetal dielectric layer, sequentially forming an IMD layer, a passivation layer, a passivation layer, an IMD layer and a pre- Patterning a metal dielectric layer into a predetermined shape to form a trench, opening the photodiode, filling the trench with a single dielectric layer, forming a color filter, and then forming an organic material layer, such as a photoresist, into a planarization layer. Forming and forming a micro lens on the planarization layer provides a method for forming a dielectric layer of the CMOS image sensor.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 또한 본 실시예는 본 발명의 권리범위를 한정하는 것은 아니고, 단지 예시로 제시된 것이다. Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this embodiment is not intended to limit the scope of the present invention, but is presented by way of example only.
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 감도 향상 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view illustrating a method for improving sensitivity of a CMOS image sensor according to a preferred embodiment of the present invention.
도 1에 도시한 바와 같이, 시모스 이미지 센서 소자의 유전층을 단일층으로 적용시켜 감도 특성을 향상시키기 위한 방법은 다음과 같다. As shown in FIG. 1, a method for improving a sensitivity characteristic by applying a dielectric layer of a CMOS image sensor device as a single layer is as follows.
먼저, 기판(100) 상에 포토 다이오드(102)를 형성하고, 그리고 나서 프리메탈 유전층(108)을 형성한 후, 제 1 및 제 2 층간 유전(IMD; inter metal dielectric)층(110, 112), 패시베이션 층(114)을 순차적으로 형성한다. First, the photodiode 102 is formed on the substrate 100, and then the premetal dielectric layer 108 is formed, followed by the first and second inter metal dielectric (IMD) layers 110, 112. The passivation layer 114 is formed sequentially.
그리고 나서, 소정 형상의 포토레지스트를 형성한 후, 소정 형상의 포토레지스트를 마스크로 이용하여 패시베이션 층(114), 제 2 및 제 1 층간 유전층(112, 110) 및 프리메탈 유전층(108)을 순차적으로 패터닝하여 소정 형상의 트렌치를 형성함으로써 포토 다이오드(102)를 개방한다. Then, after forming a photoresist of a predetermined shape, the passivation layer 114, the second and first interlayer dielectric layers 112 and 110, and the premetal dielectric layer 108 are sequentially formed using the photoresist of the predetermined shape as a mask. The photodiode 102 is opened by patterning the trenches to form trenches of a predetermined shape.
소정 형상의 트렌치를 단일 유전층(104)으로 충진시킨 후, 평탄화 공정을 수행한다. 본 발명의 바람직한 실시예에 따르면, 단일 유전층을 SOG(spin on glass), PE-CVD(plasma enhanced chemical vapor deposition) 또는 HDP-CVD(high density plasma chemical vapor deposition) 방법을 이용하여 형성하는 것이 바람직하다. After filling the trench with a predetermined shape with a single dielectric layer 104, a planarization process is performed. According to a preferred embodiment of the present invention, it is preferable to form a single dielectric layer using spin on glass (SOG), plasma enhanced chemical vapor deposition (PE-CVD) or high density plasma chemical vapor deposition (HDP-CVD). .
이어서, 컬러 필터(118)를 형성한 후, 포토레지스트와 같은 유기물질층(116)을 평탄화층으로 형성한다. Subsequently, after the color filter 118 is formed, an organic material layer 116 such as a photoresist is formed as a planarization layer.
마지막으로, 마이크로 렌즈(120)를 형성한다. Finally, the micro lens 120 is formed.
본 발명의 바람직한 실시예에 따르면, 마이크로 렌즈(120)로부터 포토 다이오드(102)까지의 단일 유전층(104)형성함으로써 상이한 층간의 계면에서 야기되는 난반사(diffused reflectance) 현상을 없앨 수 있다. According to a preferred embodiment of the present invention, the formation of a single dielectric layer 104 from the microlens 120 to the photodiode 102 can eliminate the phenomenon of diffuse reflection caused at the interface between the different layers.
또한, 본 발명의 바람직한 실시예에 따르면, 층간의 상이한 굴절률로 인한 빛의 굴절 현상을 최소화하여 포토 다이오드(102)로 입사되는 빛의 양을 극대화할 수 있게 되며, 이로 힌해 시모스 이미지 센서의 감도를 최대화할 수 있다. In addition, according to a preferred embodiment of the present invention, it is possible to maximize the amount of light incident on the photodiode 102 by minimizing the refraction of the light due to the different refractive index between the layers, thereby improving the sensitivity of the CMOS image sensor It can be maximized.
본 발명을 본 명세서 내에서 몇몇 바람직한 실시예에 따라 기술하였으나, 당업자라면 첨부한 특허 청구 범위에서 개시된 본 발명의 진정한 범주 및 사상으로부터 벗어나지 않고 많은 변형 및 향상이 이루어질 수 있다는 것을 알 수 있을 것이다. While the invention has been described in accordance with some preferred embodiments herein, those skilled in the art will recognize that many modifications and improvements can be made without departing from the true scope and spirit of the invention as set forth in the appended claims.
상기한 바와 같이, 본 발명은 시모스 이미지 센서 반도체 소자의 유전층을 단일층으로 형성하는 것으로써, 포토 다이오드로 입사되는 빛의 양을 최대화하여 감도를 향상시켜 소자의 성능을 향상시킬 수 있는 효과가 있다. As described above, according to the present invention, the dielectric layer of the CMOS image sensor semiconductor device is formed as a single layer, thereby maximizing the amount of light incident on the photodiode, thereby improving sensitivity and improving device performance. .
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 유전층 형성 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view illustrating a method of forming a dielectric layer of a CMOS image sensor according to a preferred embodiment of the present invention.
- 도면의 주요부분에 대한 부호의 설명 - -Explanation of symbols for the main parts of the drawings-
100 : 실리콘 기판 102 : 포토 다이오드100 silicon substrate 102 photodiode
106 : 필드 산화막 108 : 프리메탈 유전체막106: field oxide film 108: premetal dielectric film
110, 112 : IMD 층 114 : 패시베이션 층110, 112: IMD layer 114: passivation layer
116 : 평탄화층 118 : 컬러 필터 116: planarization layer 118: color filter
120 : 마이크로 렌즈 120: micro lens
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100907156B1 (en) * | 2007-10-22 | 2009-07-09 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing Thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100907156B1 (en) * | 2007-10-22 | 2009-07-09 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing Thereof |
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