KR20050020409A - Method for improving sensitivity of cmos image sensor by forming anti-reflection coating layer - Google Patents
Method for improving sensitivity of cmos image sensor by forming anti-reflection coating layer Download PDFInfo
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- KR20050020409A KR20050020409A KR1020030058343A KR20030058343A KR20050020409A KR 20050020409 A KR20050020409 A KR 20050020409A KR 1020030058343 A KR1020030058343 A KR 1020030058343A KR 20030058343 A KR20030058343 A KR 20030058343A KR 20050020409 A KR20050020409 A KR 20050020409A
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- layer
- forming
- image sensor
- cmos image
- photodiode
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- 230000035945 sensitivity Effects 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000011247 coating layer Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 239000011368 organic material Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000000295 complement effect Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
본 발명은 시모스(CMOS; complementary metal oxide semiconductor) 이미지 센서(image sensor)의 제조 방법에 관한 것으로서, 보다 상세하게는, 시모스 이미지 센서의 포토 다이오드 위에 반사 방지층(anti-reflection layer)을 형성시켜 줌으로써 마이크로 렌즈로부터 입사되는 빛의 포토 다이오드에서의 반사를 최소화하여 감도를 향상시키기 위한 시모스 이미지 센서의 감도 향상 방법에 관한 것이다. The present invention relates to a method for manufacturing a complementary metal oxide semiconductor (CMOS) image sensor, and more particularly, by forming an anti-reflection layer on a photodiode of a CMOS image sensor. The present invention relates to a method for improving sensitivity of a CMOS image sensor for minimizing reflection at a photodiode of light incident from a lens to improve sensitivity.
시모스 이미지 센서 소자의 포토 다이오드 물질로 굴절률이 3.4(가시광선 영역) 정도로 높은 Si 기판으로 사용하기 때문에 빛의 포토 다이오드에서의 반사율이 약 15 % 이상이 되어 감도 저하의 원인이 된다. Since the photodiode of the CMOS image sensor element is used as the Si substrate having a high refractive index of about 3.4 (visible light region), the reflectance of the photodiode of light becomes about 15% or more, which causes a decrease in sensitivity.
따라서, 포토 다이오드로 위에서의 빛의 저반사를 위한 반사 방지층의 적용과 이를 통한 감도 향상 방법이 요구된다. Accordingly, there is a need for an antireflection layer for low reflection of light from a photodiode and a method of improving sensitivity through the photodiode.
본 발명은 상기와 같은 문제점을 해결하기 위해 창작된 것으로서, 본 발명의 주목적은 시모스 이미지 센서 소자 제조시 실리콘 기판을 포토 다이오드로 사용하고, 이러한 포토 다이오드와 유전층(프리메탈층) 간의 굴절률 차이가 커서 발생하는 높은 반사율을 감소시키기 위하여 이들 층 사이에 ARC 층을 적용함으로써 포토 다이오드에서의 빛의 반사율을 약 15.9 %에서 약 4.3 %로 7 %이상 감소시켜 감도를 향상시킬 수 있는 시모스 이미지 센서의 반사방지층 형성으로 인한 감도 향상 방법을 제공하는 것이다. The present invention was created to solve the above problems, and the main purpose of the present invention is to use a silicon substrate as a photodiode in manufacturing a CMOS image sensor device, and the refractive index difference between the photodiode and the dielectric layer (premetal layer) is large. Anti-reflective layer of CMOS image sensor, which can improve sensitivity by applying ARC layer between these layers to reduce high reflectance, which reduces the reflectance of light in photodiode by more than 7% from about 15.9% to about 4.3% It is to provide a method for improving sensitivity due to formation.
상기와 같은 목적을 실현하기 위한 본 발명은 기판 상에 포토 다이오드를 형성하는 단계와, 포토 다이오드 상에 반사 방지층을 형성하는 단계와, 반사 방지층 상에 IMD 층, 패시베이션 층을 순차적으로 형성하는 단계와, 컬러 필터를 형성한 후, 포토레지스트와 같은 유기물질층을 평탄화층으로 형성하는 단계와, 평탄화층 상에 마이크로 렌즈를 형성하는 단계를 포함하는 것을 특징으로 하는 시모스 이미지 센서의 반사방지층 형성으로 인한 감도 향상 방법을 제공한다. The present invention for realizing the above object comprises the steps of forming a photodiode on a substrate, forming an antireflection layer on the photodiode, sequentially forming an IMD layer and a passivation layer on the antireflection layer; After forming the color filter, forming an organic material layer such as a photoresist as a planarization layer, and forming a microlens on the planarization layer. Provides a method for improving sensitivity.
이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 또한 본 실시예는 본 발명의 권리범위를 한정하는 것은 아니고, 단지 예시로 제시된 것이다. Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this embodiment is not intended to limit the scope of the present invention, but is presented by way of example only.
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 반사방지층 형성으로 인한 감도 향상 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view for describing a method for improving sensitivity due to the formation of an anti-reflection layer of a CMOS image sensor according to a preferred embodiment of the present invention.
도 1에 도시한 바와 같이, 본 발명의 바람직한 실시예에 의하면 시모스 이미지 센서 소자의 포토 다이오드(102)(일반적으로 실리콘 기판(100)에 이온주입 공정을 적용하여 만든다)와 프리메탈 유전체(PMD; pre-metal dielectric) 층(108) 간의 굴절률 차이로 인한 포토 다이오드(102) 에서의 빛의 높은 반사율을 낮추기 위하여 반사 방지층(104)을 포토 다이오드(102) 위에 PMD 층 형성전에 적용한다. As shown in FIG. 1, according to a preferred embodiment of the present invention, a photodiode 102 of a CMOS image sensor device (generally made by applying an ion implantation process to a silicon substrate 100) and a premetal dielectric (PMD); An antireflective layer 104 is applied prior to forming the PMD layer on the photodiode 102 to lower the high reflectivity of light in the photodiode 102 due to the difference in refractive index between the pre-metal dielectric layers 108.
도 1에 도시한 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서 소자의 제조 공정은 다음과 같다. The manufacturing process of the CMOS image sensor device according to the preferred embodiment of the present invention shown in FIG. 1 is as follows.
먼저, 기판(100) 상에 포토 다이오드(102)를 형성하고, 그리고 나서 반사 방지층을 포토 다이오드가 형성된 기판(100) 상에 형성한다. First, a photodiode 102 is formed on the substrate 100, and then an antireflection layer is formed on the substrate 100 on which the photodiode is formed.
이어서, 프리메탈 유전체층(108)을 형성한 후, 층간 유전체(IMD; inter metal dielectric) 층(110, 112), 패시베이션 층(114)을 순차적으로 형성한다. Subsequently, after the premetal dielectric layer 108 is formed, the intermetal dielectric (IMD) layers 110 and 112 and the passivation layer 114 are sequentially formed.
이어서, 컬러 필터(118)를 형성한 후, 포토레지스트와 같은 유기물질층(116)을 평탄화층으로 형성한다. Subsequently, after the color filter 118 is formed, an organic material layer 116 such as a photoresist is formed as a planarization layer.
마지막으로, 마이크로 렌즈(120)를 형성한다. Finally, the micro lens 120 is formed.
가시 광선 영역에서, 예를 들면 ARC 층(104)을 적용하지 않을 경우 반사율은 약 15.9 % 정도 이고 굴절률이 2.23 인 ARC 층(104)을 적용할 경우 반사율은 약 4.3 %가 되어 약 7.3 %의 감도를 향상시킬 수 있다. In the visible region, for example, when the ARC layer 104 without the ARC layer 104 is applied and the reflectance is about 15.9% and the refractive index is 2.23, the reflectance becomes about 4.3% and the sensitivity is about 7.3%. Can improve.
본 발명의 바람직한 실시예에 따르면, 빨강(red)/초록(green)/파랑(blue) 영역에 따라 약간 다르기는 하지만 전 영역에 걸쳐 약 5 % 이상의 감도를 향상시킬 수 있다. According to a preferred embodiment of the present invention, although slightly different depending on the red / green / blue region, sensitivity of about 5% or more can be improved over the entire region.
또한, 본 발명의 바람직한 실시예에서는 ARC 층(104) 형성시 약 2.23의 유전층 필름을 형성하기 위해서는 일반적으로 사용되는 Si가 풍부한 질화산화막(Oxynitride film)을 사용한다. In addition, in the preferred embodiment of the present invention, in order to form the dielectric layer film of about 2.23 in forming the ARC layer 104, a silicon-rich oxide nitride film generally used is used.
그리고, 패시베이션 층(114)은 굴절률 2.0의 PE-질화막을 적용할 경우 약 6.7 % 정도 반사율을 감소시킬 수 잇으며, 굴절률 1.7 정도의 PE-질화산화막을 IMD 층(110, 112)으로 사용하면 약 4.2 % 정도 반사율을 감소시켜 감도 특성을 향상시킬 수 있다. In addition, the passivation layer 114 may reduce the reflectance by about 6.7% when the PE-nitride film having a refractive index of 2.0 is applied, and when the PE-nitride oxide film having a refractive index of about 1.7 is used as the IMD layers 110 and 112. The sensitivity can be improved by reducing the reflectance by about 4.2%.
본 발명을 본 명세서 내에서 몇몇 바람직한 실시예에 따라 기술하였으나, 당업자라면 첨부한 특허 청구 범위에서 개시된 본 발명의 진정한 범주 및 사상으로부터 벗어나지 않고 많은 변형 및 향상이 이루어질 수 있다는 것을 알 수 있을 것이다. While the invention has been described in accordance with some preferred embodiments herein, those skilled in the art will recognize that many modifications and improvements can be made without departing from the true scope and spirit of the invention as set forth in the appended claims.
상기한 바와 같이, 본 발명은 시모스 이미지 센서 반도체 소자의 포토 다이오드 위에 반사 방지층을 형성하여 포토 다이오드에서의 빛의 반사를 최소화하여 감도를 향상시킴으로써 소자 성능을 향상 시킬 수 있는 효과가 있다. As described above, the present invention has the effect of improving the device performance by forming an anti-reflection layer on the photodiode of the CMOS image sensor semiconductor device to minimize the reflection of light from the photodiode to improve sensitivity.
도 1은 본 발명의 바람직한 실시예에 따른 시모스 이미지 센서의 반사방지층 형성으로 인한 감도 향상 방법을 설명하기 위한 단면도를 도시한다. 1 is a cross-sectional view for describing a method for improving sensitivity due to the formation of an anti-reflection layer of a CMOS image sensor according to a preferred embodiment of the present invention.
- 도면의 주요부분에 대한 부호의 설명 - -Explanation of symbols for the main parts of the drawings-
100 : 실리콘 기판 102 : 포토 다이오드100 silicon substrate 102 photodiode
104 : ARC 층 106 : 필드 산화막104: ARC layer 106: field oxide film
108 : 프리메탈 유전체막 110, 112 : IMD 층108: premetal dielectric film 110, 112: IMD layer
114 : 패시베이션 116 : 평탄화층 114: passivation 116: planarization layer
118 : 컬러 필터 120 : 마이크로 렌즈 118: color filter 120: micro lens
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