KR20050008410A - compound of photoresist strip solution preventing of corrosion about a copper wire - Google Patents

compound of photoresist strip solution preventing of corrosion about a copper wire Download PDF

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KR20050008410A
KR20050008410A KR1020030048934A KR20030048934A KR20050008410A KR 20050008410 A KR20050008410 A KR 20050008410A KR 1020030048934 A KR1020030048934 A KR 1020030048934A KR 20030048934 A KR20030048934 A KR 20030048934A KR 20050008410 A KR20050008410 A KR 20050008410A
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amine
corrosion
copper
stripper composition
photoresist
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김성진
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김성진
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2068Ethers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: Provided is a photoresist stripper composition, which has excellent capability of stripping cured or degenerated photoresist and prevents corrosion of copper lines, and thus contributes to manufacture high-quality and highly integrated LCDs and semiconductor devices. CONSTITUTION: The photoresist stripper composition comprises 10-70 wt% of an amine compound, 3-70 wt% of an organic solvent and 0.1-5 wt% of ascorbic acid as anti-corrosive agent. The amine compound is one or two selected from the group consisting of monoethanol amine, diethyleneglycol amine, isopropanol amine, N-methylethanol amine, dimethylethanol amine and 2-£2-((dimethylamino)epoxy)ethanol|. The organic solvent is one or two selected from the group consisting of tetrahydrofurfuryl alcohol, tetrahydro-3-furanmethanol, ethylcarbitol, butylcarbitol, N-methyl-2-pyrrolidone and N,N-dimethylacetamide.

Description

구리배선에 대한 부식을 방지하는 포토레지스트 박리액 조성물{compound of photoresist strip solution preventing of corrosion about a copper wire}Compound of photoresist strip solution preventing of corrosion about a copper wire}

본 발명은 구리배선에 대한 부식을 방지하는 포토레지스트 박리액 조성물에 관한 것으로, 특히 액정표시장치(LCD), 평판표시장치(PDP), 유기 EL 등의 화상구현장치 및 반도체의 미세회로형성 공정에 있어서 엣칭(Etching), 이온주입 등에 의해 경화되거나 변질된 포토레지스트(Photoresist)를 제거하는 박리액 조성물을 구리배선에 대한 부식을 방지하도록 하기 위한 박리액 조성물(Stripper)에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist stripper composition which prevents corrosion on copper wiring, and more particularly, to image forming apparatuses such as liquid crystal displays (LCDs), flat panel displays (PDPs), organic ELs, and microcircuits for semiconductors. The present invention relates to a stripper composition (Stripper) for preventing corrosion of copper strips from a stripper composition for removing a photoresist cured or deteriorated by etching, ion implantation, or the like.

구리 배선은 알루미늄 배선에 비해 전기전도도가 탁월하고 저항이 적어 반송전류를 일정하게 유지하면서 배선의 미세화와 고집적화의 실현이 가능하다. 따라서 사용 금속층이 감소하고 생산 코스트 절감 및 고성능화를 구현할 수 있다. 또한, 구리 배선은 전해도금특성이 우수하여 디바이스의 신뢰도를 높일 수 있다는 장점이 있다. 이에 관련 화상구현장치 및 반도체 가공업계에서는 최근 수년간 구리배선 공정의 도입이 검토되어 지고 있다.Copper wiring has superior electrical conductivity and less resistance than aluminum wiring, so that the wiring can be miniaturized and highly integrated while maintaining a constant carrier current. Therefore, the use metal layer can be reduced, and production cost can be reduced and high performance can be realized. In addition, the copper wiring has an advantage that the reliability of the device can be increased by excellent electroplating characteristics. In recent years, the implementation of copper wiring processes has been considered in the related image realization apparatus and semiconductor processing industry.

그러나 기존의 알루미늄 배선용으로 양산에 적용되고 있는 박리액 조성물, 예를들면 모노에타놀아민, 부틸카르비톨, 1-메틸-2-피로리돈으로 구성된 박리액 조성물(비교예1)과 같은 경우 구리에 대한 부식이 심해 구리배선용 박리제로 사용했을 때 문제가 발생될 수 가 있다.However, in the case of a stripper composition which is applied to mass production for the existing aluminum wiring, for example, a stripper composition composed of monoethanolamine, butyl carbitol, 1-methyl-2-pyrrolidone (Comparative Example 1) Corrosion may be so severe that problems may arise when used as a stripper for copper wiring.

일부 박리액 조성물에서 부식방지제로 사용하고 있는 카테콜(Cathecol), 피로가롤(Pyrogallol) 및 벤조트리아졸(Benzotriazole)과 같은 첨가제를 도입하여도 구리의 부식방지제로 그다지 효과가 없을 뿐만 아니라 박리력의 저하를 가져 올 수가 있다. 또한, 선 공개된 대한민국특허(공개번호 제2003-0030399호)에서와 같이 2급 아민을 사용한 경우도 구리부식에 대한 억제효과가 충분치 못할 뿐만 아니라 박리력의 저하를 가져오는 문제점이 있었다.The addition of additives such as Cathecol, Pyrogallol and Benzotriazole, which are used as corrosion inhibitors in some stripper compositions, is not only effective as a corrosion inhibitor for copper but also a peeling force. Can lead to a decrease. In addition, even when the secondary amine is used as in the previously disclosed Korean Patent Publication No. 2003-0030399, the inhibitory effect on copper corrosion is not sufficient, and there is a problem of lowering the peeling force.

본 발명은 상기의 문제점을 해소하기 위하여 발명된 것으로, 액정표시장치, 평판표시장치, 유기 EL 등의 화상구현장치 및 반도체의 미세회로형성 공정에 있어서 엣칭, 이온주입 등에 의해 경화되거나 변질된 포토레지스트를 제거하는 성능이 우수하고, 특히 구리배선에 대한 부식이 없는 박리액 조성물을 제공하는 데 그 목적이 있다.The present invention has been invented to solve the above problems, a photoresist that is cured or deteriorated by etching, ion implantation, etc. in an image forming apparatus such as a liquid crystal display, a flat panel display, an organic EL, and a semiconductor fine circuit forming process. The purpose of the present invention is to provide a peeling liquid composition which is excellent in removing the corrosion resistance and particularly free of corrosion on copper wiring.

도 1은 실시예3과 비교예 1 및 5의 조성으로 실시예의 구리에 대한 부식평가 방법에 따라 70℃에서 3시간 구리에 대한 부식을 평가한 결과를 나타낸 도면이다. 그리고,1 is a view showing the results of evaluating the corrosion of the copper for 3 hours at 70 ℃ according to the corrosion evaluation method for the copper of the example in the composition of Example 3 and Comparative Examples 1 and 5. And,

도 2는 실시예의 3과 비교예 1의 조성으로 실시예의 탈이온수 린스공정에서의 구리부식평가 방법에 따라 70℃에서 5분간 탈이온수 함량에 따른 구리의 부식을 평가한 결과를 나타낸 도면이다.2 is a view showing a result of evaluating the corrosion of copper according to the deionized water content for 5 minutes at 70 ℃ according to the copper corrosion evaluation method in the deionized water rinse step of the composition of Example 3 and Comparative Example 1.

이와 같은 목적을 달성하기 위한 본 발명은,The present invention for achieving such an object,

(1)아민화합물 10 내지 70중량%, (2)유기용제 3 내지 70중량%, 부식방지제인 (3)아스코르빈산을 0.1 내지 5중량% 포함하는 것을 특징으로 하는 포토레지스트 박리액 조성물을 제공한다.(1) 10 to 70% by weight of an amine compound, (2) 3 to 70% by weight of an organic solvent, and 0.1 to 5% by weight of (3) ascorbic acid, which is a corrosion inhibitor, to provide a photoresist stripper composition. do.

상기 (1)의 아민화합물로는 통상적으로 사용하는 것이면 어떤 것이라도 좋다. 예를 들면 모노에탄올아민, 디에틸렌글리콜아민, 이소프로판올아민, N-메틸에탄올아민, 디메틸에탄올아민, 2-[2-(디메틸아미노)에폭시)에탄올] 등을 들 수 있고, 이들을 단독으로 또는 두 가지를 혼합하여 사용하여도 좋다.Any of the amine compounds of the above (1) may be used as long as they are commonly used. Examples thereof include monoethanolamine, diethylene glycol amine, isopropanolamine, N-methylethanolamine, dimethylethanolamine, 2- [2- (dimethylamino) epoxy) ethanol], and the like. You may mix and use it.

상기 (2)의 유기용제로는 테트라히드로푸르푸릴알콜, 테트라히드로-3-퓨란메탄올로 이루어진 그룹 중에서 선택되어지는 것 하나 내지 둘을 3내지 30중량% 포함하고, 에틸카르비톨, 부틸카르비톨, N-메틸-2-피로리돈, N,N-디메틸아세트아마이드, 테트라히드로푸르푸릴알콜, 테트라히드로-3-퓨란메탄올로 이루어진 그룹 중에서 선택되어지는 것 하나 내지 둘을 20내지 70중량% 포함한다.The organic solvent of (2) includes one to two to 30% by weight of one selected from the group consisting of tetrahydrofurfuryl alcohol, tetrahydro-3-furan methanol, ethyl carbitol, butyl carbitol, 20 to 70% by weight of one or two selected from the group consisting of N-methyl-2-pyrrolidone, N, N-dimethylacetamide, tetrahydrofurfuryl alcohol, tetrahydro-3-furanmethanol.

본 발명에서의 아스코르빈산은 미량 첨가하여도 구리에 대한 부식방지 효과가 탁월하다.Ascorbic acid in the present invention is excellent in the corrosion protection effect against copper even when added in a small amount.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

제조예 1Preparation Example 1

모노에탄올아민 15중량%, 부틸카르비톨 35중량%, N-메틸피로리돈 30중량%, 테트라히드로푸르푸릴알콜 20중량%, 아스코르빈산 0.5중량%를 실온에서 고형분이 완전히 용해되어 균일하게 혼합될 때까지 교반하여 박리액 조성물을 제조한다.15% by weight of monoethanolamine, 35% by weight of butylcarbitol, 30% by weight of N-methylpyrrolidone, 20% by weight of tetrahydrofurfuryl alcohol, 0.5% by weight of ascorbic acid were completely dissolved at room temperature and mixed uniformly. Stir until until the peeling liquid composition is prepared.

제조예2 내지 8, 비교예 1 내지 5Preparation Examples 2 to 8, Comparative Examples 1 to 5

각 조성물의 조성을 표 1에 나타낸 것과 같이 한 것 이외에는 제조예 1과 동일하게 조성물을 제조하였다.Compositions were prepared in the same manner as in Production Example 1, except that the compositions of each composition were as shown in Table 1.

실시예Example

1. 포토레지스트 막에 대한 박리력 평가1. Evaluation of Peel Force on Photoresist Film

통상의 방법에 따라 4인치 실리콘 웨이퍼에 동우화인켐사 SLP-H2O I선 레지스트를 1마이크로미터(㎛) 두께로 도포한 후, 박리력 평가의 효율성을 높이기 위해 핫 플레이트(Hot Plate)에서 150로 1시간 동안 베이킹(Baking)하여 포토레지스트 막을 형성하였다.After applying DONGWOO FINECHEM's SLP-H2O I-line resist on a 4-inch silicon wafer with a thickness of 1 micrometer (µm) according to a conventional method, the hot plate should be 150 to 1 in order to increase the peeling efficiency. Baking for a time to form a photoresist film.

한편, 실시예 및 비교예에 따라 준비된 각 박리액 조성물을 70℃ 항온수조에서 30분 이상 방치시켜 액의 온도를 균일하게 하였다.In addition, each peeling liquid composition prepared according to the Example and the comparative example was left to stand in a 70 degreeC constant temperature water tank for 30 minutes or more, and the temperature of the liquid was made uniform.

상기 150℃로 1시간 동안 베이킹한 웨이퍼를 가로 세로 1cm의 크기로 자른 후 70℃ 항온수조에서 30분 이상 방치시켜 온도가 균일하게 된 박리액에 침지시켜 레지스트 막이 완전히 제거되는 시간을 측정한 후, 그 박리능력을 10등급으로 나누어 제거가 빠른 경우를 R 10, 제거가 느린 경우를 R 1으로 하여 표 1에 나타내었다.After cutting the wafer baked at 150 ° C. for 1 hour to a size of 1 cm in width and left for 30 minutes in a 70 ° C. constant temperature water bath, the temperature of the resist film was completely removed by immersion in a stripping solution having a uniform temperature. The peeling capacity was divided into 10 grades, and the removal was quick as R 10 and the removal was shown as R 1 in Table 1.

2. 구리에 대한 부식평가2. Corrosion evaluation for copper

구리에 대한 부식평가를 위해 알드리치사(Aldrich사)에서 시판되고 있는 순도 99.98%의 구리 호일(Foil)을 가로, 세로 5mm가 되게 절단한 후 실시예 및 비교예에 따라 제조한 각 박리액 조성물 20g에 넣고, 70℃ 열풍건조식 오븐에서 3시간 방치시킨 후, 용출된 구리의 농도를 휴렛팩커드(Hewlett Packard)사의 유도결합질량분석기(ICP-MS : Inductive Coupled Plasma Mass Spectrometer) HP-7500s로 측정하여 부식정도를 10등급으로 나누어, 용출이 많고 부식이 심한 경우를 C 10, 용출이 적어 부식이 거의 일어나지 않는 경우를 C 1로 하여 <표1>에 나타내었다.20 g of each stripper composition prepared according to Examples and Comparative Examples after cutting a copper foil having a purity of 99.98% of purity commercially available from Aldrich Co., Ltd. to a length of 5 mm for corrosion evaluation on copper. Incubated in a 70 ° C. hot-air-dried oven for 3 hours, and the concentration of the eluted copper was measured by Hewlett Packard's Inductive Coupled Plasma Mass Spectrometer (HPP) HP-7500s. Dividing the degree into 10 grades, C 10 is a case where a lot of dissolution and severe corrosion is C 10, and a case where little corrosion is hardly generated due to C 1 is shown in <Table 1>.

<표 1>포토레지스트 박리액 조성물의 조성 및 평가결과Table 1 Composition and evaluation results of photoresist stripper composition

표 1에 나타난 바와 같이 박리력 및 구리에 대한 부식평가 결과 테트라히드로푸르푸릴알콜과 아스코르빈산을 사용한 실시예1 내지 8의 조성물은 구리에 대한부식이 없을 뿐만 아니라 박리력 면에 있어서도 우수하다.As shown in Table 1, the peeling force and the corrosion evaluation result for copper, the compositions of Examples 1 to 8 using tetrahydrofurfuryl alcohol and ascorbic acid are excellent in terms of peeling force as well as no corrosion to copper.

비교예2와 실시예1을 비교하면 소량의 아스코르빈산 첨가에 의해 구리에 대한 부식이 현저히 줄어들었음을 알 수 있다. 비교예1에 벤조트리아졸 또는 카테콜을 첨가한 비교예3 내지 4의 경우 구리에 대한 부식이 소량 줄어들었으나 충분치 못하다. 또 비교예5(특2003-0030399의 실시예)와 같이 2급 아민을 사용한 경우도 구리에 대한 억제효과가 충분치 못할 뿐만 아니라 박리력의 저하를 가져온다.Comparing Comparative Example 2 and Example 1, it can be seen that the corrosion to copper was significantly reduced by adding a small amount of ascorbic acid. In Comparative Examples 3 to 4, in which benzotriazole or catechol was added to Comparative Example 1, corrosion to copper was reduced a little, but not enough. In addition, when secondary amine is used as in Comparative Example 5 (Example of Special 2003-0030399), not only the inhibitory effect on copper is insufficient, but also the peeling force is lowered.

도면 1에 표 1의 평가 결과 중 실시예3과 비교예1 및 5의 조성으로 70℃에서 3시간 부식 평가를 하여 구리용출량을 측정한 결과를 비교하여 나타내었다.Figure 1 shows the comparison of the results obtained by measuring the amount of copper elution by performing corrosion evaluation at 70 ° C. for 3 hours with the compositions of Example 3 and Comparative Examples 1 and 5 in Table 1.

3. 탈이온수 린스공정에서의 구리 부식평가3. Copper Corrosion Evaluation in Deionized Water Rinse Process

탈이온수의 린스공정에서 발생하는 구리부식을 평가하기 위해 실시예3과 비교예1의 박리액 조성물에 탈이온수를 30%, 60%, 70%, 80%, 90% 첨가한 용액 20g을 만들어 상기 알드리치사의 구리 호일을 가로, 세로 5mm가 되게 잘라 넣고, 70℃ 열풍건조식 오븐에서 5분간 방치시킨 후 용출된 구리의 농도를 휴렛팩커드(Hewlett Packard)사의 유도결합질량분석기 HP-7500s로 측정하여 그 결과를 도면 2에 나타내었다.In order to evaluate the copper corrosion generated in the rinse process of deionized water, 20 g of a solution in which 30%, 60%, 70%, 80%, and 90% of deionized water was added to the stripper composition of Example 3 and Comparative Example 1 was prepared. After cutting Aldrich's copper foil to a length of 5mm, leaving it in a 70 ℃ hot air drying oven for 5 minutes, the concentration of the eluted copper was measured by Hewlett Packard's inductive coupling mass spectrometer HP-7500s. Is shown in FIG.

도면 2에서 보면 100% 유기용액 상태에서의 구리 용출량은 비교예1이 실시예3에 비해 7배 높고, 탈이온수가 혼입된 상태에서도 높은 용출상태를 유지한다.As shown in FIG. 2, the amount of copper eluted in the state of 100% organic solution is 7 times higher than that of Example 3, and maintains a high eluted state even in a state in which deionized water is mixed.

상술한 바와 같이, 본 발명에 따른 포토레지스트 박리액 조성물은 경화되거나 변질된 포토레지스트(Photoresist)의 제거 능력이 우수할 뿐만 아니라 구리배선에 대한 부식이 거의 없는 박리액 조성물(Stripper)을 제공함으로써 액정표시장치 및 반도체 등의 고성능화, 고집적화에 기여할 것으로 기대된다.As described above, the photoresist stripper composition according to the present invention is not only excellent in the ability to remove the cured or deteriorated photoresist (Photoresist), but also provides a stripper composition (Stripper) with little corrosion to copper wiring. It is expected to contribute to high performance and high integration of display devices and semiconductors.

이상에서 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하였으나, 본 발명은 이에 한정되는 것이 아니며 본 발명의 기술적 사상의 범위내에서 당업자에 의해 그 개량이나 변형이 가능하다.Although the preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited thereto and may be improved or modified by those skilled in the art within the scope of the technical idea of the present invention.

Claims (4)

제 1성분으로 아민화합물, 제 2 성분으로 유기용제, 제3성분으로 부식방지제인 아스코르빈산을 포함하는 포토레지스트 박리액 조성물.A photoresist stripper composition comprising an amine compound as a first component, an organic solvent as a second component, and ascorbic acid as a corrosion inhibitor as a third component. 제 1항에 있어서, 아스코르빈산 0.1 내지 5중량% 포함하는 포토레지스트 박리액 조성물.The photoresist stripper composition according to claim 1, comprising 0.1 to 5% by weight of ascorbic acid. 제 1항에 있어서, 유기용제로 테트라히드로푸르푸릴알콜, 테트라히드로-3-퓨란메탄올로 이루어진 그룹 중에서 선택되어지는 것 하나 내지 둘을 3내지 30중량% 포함하고, 에틸카르비톨, 부틸카르비톨, N-메틸-2-피로리돈, N,N-디메틸아세트아마이드로 이루어진 그룹 중에서 선택되어지는 것 하나 내지 둘을 20내지 70중량% 포함하는 포토레지스트 박리액 조성물.The method according to claim 1, wherein the organic solvent comprises one to two selected from the group consisting of tetrahydrofurfuryl alcohol, tetrahydro-3-furanmethanol, 3 to 30% by weight, ethyl carbitol, butyl carbitol, A photoresist stripper composition comprising 20 to 70% by weight of one to two selected from the group consisting of N-methyl-2-pyrrolidone and N, N-dimethylacetamide. 제 1항에 있어서, 아민화합물로 모노에탄올아민, 디에틸렌글리콜아민, 이소프로판올아민, N-메틸에탄올아민, 디메틸에탄올아민, 2-[2-(디메틸아미노)에폭시)에탄올]로 이루어진 그룹 중에서 선택되어지는 것 하나 내지 둘을 10내지 70중량%를 포함하는 것을 특징으로 하는 포토레지스트 박리액 조성물.The method of claim 1, wherein the amine compound is selected from the group consisting of monoethanolamine, diethylene glycol amine, isopropanolamine, N-methylethanolamine, dimethylethanolamine, 2- [2- (dimethylamino) epoxy) ethanol] A photoresist stripper composition comprising one to two weight loss of 10 to 70% by weight.
KR1020030048934A 2003-07-14 2003-07-14 compound of photoresist strip solution preventing of corrosion about a copper wire KR20050008410A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8170488B2 (en) 2008-03-11 2012-05-01 Intel Corporation Mitigation of internetwork interference
TWI426362B (en) * 2009-08-25 2014-02-11 Ltc Co Ltd A photoresist stripping composition for manufacturing lcd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8170488B2 (en) 2008-03-11 2012-05-01 Intel Corporation Mitigation of internetwork interference
TWI426362B (en) * 2009-08-25 2014-02-11 Ltc Co Ltd A photoresist stripping composition for manufacturing lcd
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD

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