KR20040104374A - 높은 기체 컨덕턴스를 가지는 박막 증착 장비 - Google Patents
높은 기체 컨덕턴스를 가지는 박막 증착 장비 Download PDFInfo
- Publication number
- KR20040104374A KR20040104374A KR1020040033124A KR20040033124A KR20040104374A KR 20040104374 A KR20040104374 A KR 20040104374A KR 1020040033124 A KR1020040033124 A KR 1020040033124A KR 20040033124 A KR20040033124 A KR 20040033124A KR 20040104374 A KR20040104374 A KR 20040104374A
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- susceptor
- film deposition
- gas
- thin film
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
- 하부가 상부보다 큰 용적을 가지는 챔버와;상기 챔버 내에위치하며, 상면에 기판이 안치되는 서셉터와;상기 기판의 상부에 공정 기체를 분사하는 기체 분사부와;상기 챔버의 상부에 위치하며, RF 전원과 연결되는 코일부와;상기 챔버의 벽에 설치되는 배기구를 포함하는 것을 특징으로 하는박막 증착 장비
- 제 1 항에 있어서,상기 서셉터는 승하강이 가능하며, 상기 서셉터가 최대로 하강하였을 때의 상면을 기준으로 상기 챔버의 하부용적이 상부용적 보다 큰 것을 특징으로 하는 박막 증착장비
- 제 2 항에 있어서,상기 챔버의 횡단면 내부 직경은 서셉터의 하강시 점진적으로 커지는 것을 특징으로 하는 박막 증착장비
- 제 1 항에 있어서,상기 챔버는 유전체 돔과, 상기유전체 돔의 하부에 위치하며 상기 유전체 돔보다 큰 용적을 가지는 챔버 몸체부를 포함하는 것을 특징으로 하는 박막 증착장비
- 제 4 항에 있어서,상기 챔버 몸체부는 중앙의 횡직경이 상부 및 하부의 횡직경 보다 큰 것을 특징으로 하는 박막 증착 장비
- 제 1 항 내지 제 5 항 중 어느한 항에 있어서, 상기 기체 분사부는 상기 서셉터의 상부 또는 상기 서셉터의 상부와 측면부에 설치되는 것을 특징으로 하는 박막 증착 장비
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서, 상기 배기구는 상기 챔버의 측면 또는 저면에 설치되는 것을 특징으로 하는 박막 증착 장치
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093115419A TWI374496B (en) | 2003-05-30 | 2004-05-28 | Apparatus having high gas conductance |
CNB2004100455215A CN100463112C (zh) | 2003-05-30 | 2004-05-28 | 一种用于半导体装置的设备 |
US10/858,660 US20040237894A1 (en) | 2003-05-30 | 2004-06-01 | Apparatus having high gas conductance |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030034953 | 2003-05-30 | ||
KR1020030034953 | 2003-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040104374A true KR20040104374A (ko) | 2004-12-10 |
KR101002942B1 KR101002942B1 (ko) | 2010-12-21 |
Family
ID=37379994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040033124A KR101002942B1 (ko) | 2003-05-30 | 2004-05-11 | 높은 기체 컨덕턴스를 가지는 박막 증착 장비 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101002942B1 (ko) |
TW (1) | TWI374496B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101170597B1 (ko) * | 2006-05-10 | 2012-08-02 | 주성엔지니어링(주) | 진폭변조 알에프 전력을 이용한 갭필 방법 및 이를 위한갭필 장치 |
-
2004
- 2004-05-11 KR KR1020040033124A patent/KR101002942B1/ko active IP Right Grant
- 2004-05-28 TW TW093115419A patent/TWI374496B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200509254A (en) | 2005-03-01 |
KR101002942B1 (ko) | 2010-12-21 |
TWI374496B (en) | 2012-10-11 |
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