KR20040070716A - Transflective type liquid crystal display device and method of manufacturing the same - Google Patents

Abstract

PURPOSE: A transflective LCD(Liquid Crystal Display) and a method for manufacturing the LCD are provided to form a data line and a reflection electrode at the same level to reduce the number of masks. CONSTITUTION: A transflective LCD includes a pixel area having a thin film transistor region(TFT), a reflection region(R), and a transmission region(T). The LCD includes a gate electrode(102) formed on a portion of a substrate(100) corresponding to the thin film transistor region, a gate insulating layer(104) formed on the substrate including the gate electrode, an active pattern(106) formed on a portion of the gate insulating layer, which corresponds to the gate electrode, and an organic insulating layer(110) formed on a portion of the gate insulating layer, other than the thin film transistor region and transmission region. The surface of the organic insulating layer includes a plurality of protrusions and depressions. The LCD further includes source and drain electrodes(116a,116b) formed on the active pattern, a reflection electrode(116c) formed on the organic insulating layer of the reflection area at the same level at which the source and drain electrodes are formed, a passivation layer(120) that is formed on the source and drain electrodes, reflection electrode and organic insulating layer, other than the transmission region, and has a contact hole(122) exposing one of the source and drain electrodes, and a transparent electrode(126) formed on the passivation layer and connected to one of the source and drain electrodes through the contact hole.

Description

Transflective type liquid crystal display device and method of manufacturing the same

The present invention relates to a liquid crystal display device and a manufacturing method thereof, and more particularly, to a transflective liquid crystal display device and a method for manufacturing the same that can reduce the number of masks.

The liquid crystal display device is composed of two substrates having electrodes formed thereon and a liquid crystal layer inserted therebetween, by applying a voltage to the electrodes to rearrange liquid crystal molecules of the liquid crystal layer to control the amount of transmitted light. Display device. Electrodes are formed on each of the two substrates, and a thin film transistor (TFT) for switching a voltage applied to each electrode is formed on one of the two substrates.

The liquid crystal display may be classified into a transmissive liquid crystal display device displaying an image using a light source such as a backlight and a reflective liquid crystal display device using natural light. In the case of a transmissive liquid crystal display device, the brightness of the display element itself, i.e., the backlight, is significantly lower than that of external light such as sunlight, and thus the contrast is low in a high ambient light such as outside a building. . As a result, the visibility is lowered and the display characteristics are very poor.

In order to solve this problem, the pixel unit for driving the liquid crystal is divided into a transmissive region and a reflective region. In a dark place where an indoor or external light source does not exist, it operates in a transmissive display mode that displays using a light source of the display element itself. In the outdoor high-light environment, a transflective liquid crystal display device that operates in a reflective display mode for reflecting and displaying external incident light has been developed.

1 is a cross-sectional view of a transflective liquid crystal display device according to a conventional method, and illustrates an amorphous silicon thin film transistor-liquid crystal display device having a bottom-gate structure.

Referring to FIG. 1, after depositing a first metal film on a substrate 10 made of an insulating material such as glass, quartz, or sapphire, the first metal film is patterned by a photolithography process using a first mask to form a first direction. A gate wiring including a gate line (not shown) extending to the gate electrode and a gate electrode 12 of the thin film transistor branched from the gate line is formed.

A gate insulating film 14 made of silicon nitride is deposited on the substrate on which the gate wiring is formed, and an amorphous silicon film and an n ⁺ doped amorphous silicon film are sequentially deposited thereon. Subsequently, the n ⁺ doped amorphous silicon film and the amorphous silicon film are successively patterned by a photolithography process using a second mask to form an active pattern 16 made of an amorphous silicon film and an ohmic contact pattern made of n ⁺ doped amorphous silicon film. (18) is formed.

After depositing a second metal layer on the ohmic contact pattern 18 and the gate insulating layer 14, the second metal layer is patterned by a photolithography process using a third mask to extend in a second direction perpendicular to the gate line. A data line including a data line (not shown) and source / drain electrodes 20a and 20b of the thin film transistor branched from the data line are formed. Subsequently, the ohmic contact pattern 18 exposed between the source electrode 20a and the drain electrode 20b is dry-etched to form a channel region of the thin film transistor.

After depositing an inorganic insulating film 22 made of silicon nitride used as an interlayer insulating film and a protective film on the data wiring and gate insulating film 14, a photosensitive organic insulating film 24 is formed thereon. Subsequently, after the lens exposure of the surface of the organic insulating film 24 using the fourth mask, the drain electrode 20b and the organic insulating film 24 of the pad portion are exposed using the fifth mask. Then, the organic insulating film 24 is developed to form a plurality of irregularities 26 for light scattering on the surface of the organic insulating film 24, and at the same time, the organic insulating film 24 of the drain electrode 20b is removed. do. The unevenness 26 has a principal inclination of about 5 to 15 degrees.

Subsequently, the inorganic insulating layer 22 on the drain electrode 20b is removed by a photolithography process using a sixth mask to form a contact hole 28 exposing the drain electrode 20b, and then to be deposited in a subsequent process. Argon (Ar) plasma treatment is performed to improve the adhesion between the ITO thin film and the organic insulating layer 24.

After depositing an ITO thin film to be used as a pixel electrode on the front surface of the resultant, the transparent electrode 30 is contacted with the drain electrode 20b through the contact hole 28 by patterning the ITO thin film by a photolithography process using a seventh mask. To form.

After depositing a metal film to be used as a pixel electrode and a reflecting plate on the entire surface of the resultant on which the transparent electrode 30 is formed, the metal film is patterned by a photolithography process using an eighth mask to drain the electrode 20b through the contact hole 28. ) And a reflective electrode 32 having a transmission window T ₁ that is electrically connected to and exposes the transparent electrode 30 below.

According to the conventional method described above, a semi-transmissive amorphous silicon thin film transistor-liquid crystal display device is manufactured using a total of eight masks. As the number of masks increases, the process cost and the probability of process error increase, which increases the manufacturing cost. Therefore, there is an urgent need to develop a technology for reducing the number of masks in the process of manufacturing a semi-transparent amorphous silicon thin film transistor-liquid crystal display device. It is becoming.

Accordingly, a first object of the present invention is to provide a semi-transmissive liquid crystal display device which can reduce the number of masks by forming the data line and the reflective electrode including the source / drain electrodes in the same layer.

A second object of the present invention is to provide a method of manufacturing a transflective liquid crystal display device which can reduce the number of masks by forming a data line and a reflective electrode including a source / drain electrode in the same layer.

1 is a cross-sectional view of a transflective liquid crystal display device according to a conventional method.

2 is a cross-sectional view of a transflective liquid crystal display device according to a first embodiment of the present invention.

3A to 3E are cross-sectional views illustrating a method of manufacturing a transflective liquid crystal display device according to a first embodiment of the present invention.

4A to 4D are cross-sectional views illustrating a method of manufacturing a transflective liquid crystal display according to a second embodiment of the present invention.

<Explanation of symbols for main parts of the drawings>

100 substrate 102 gate electrode

104: gate insulating film 106: active pattern

108: ohmic contact pattern 110: organic insulating film

112: unevenness 114: first opening

116a and 116b: source / drain electrodes

116c: reflective electrode 118: thin film transistor

120: protective film 122: contact hole

124: second opening 126: transparent electrode

In order to achieve the first object of the present invention described above, the present invention provides a semi-transmissive liquid crystal display device in which a pixel portion is divided into a thin film transistor region, a reflective region, and a transparent region, wherein the gate electrode is formed on a substrate of the thin film transistor region. ; A gate insulating film formed on the substrate including the gate electrode; An active pattern formed on the gate insulating layer on the gate electrode; An organic insulating film formed on the gate insulating film except for the thin film transistor region and the transmissive region and including a plurality of irregularities on a surface thereof; A source / drain electrode formed on the active pattern; A reflective electrode formed on the organic insulating layer of the reflective region in the same layer as the source / drain electrode; A protective film continuously formed on the source / drain electrode, the reflective electrode, and the organic insulating layer except for the transmission region, and having a contact hole exposing any one of the source electrode and the drain electrode; And a transparent electrode formed on the contact hole and the passivation layer, the transparent electrode being in contact with any one of the source electrode and the drain electrode through the contact hole.

Preferably, the transparent electrode is in contact with the reflective electrode in a transmissive region where the protective film and the organic insulating film are not formed.

According to another aspect of the present invention for achieving the above-described first object, in a semi-transmissive liquid crystal display device in which a pixel portion is divided into a thin film transistor region, a reflection region and a transmission region, the thin film transistor region is formed on a substrate. A gate electrode formed on the; A gate insulating film formed on the substrate including the gate electrode; An active pattern formed on the gate insulating layer on the gate electrode; An organic insulating film formed on the gate insulating film except for the thin film transistor region and including a plurality of irregularities on a surface thereof; A source / drain electrode formed on the active pattern; A reflective electrode formed on the organic insulating layer of the reflective region in the same layer as the source / drain electrode; A passivation layer formed on the source / drain electrode, the reflective electrode, and the organic insulating layer, and having a contact hole exposing any one of the source electrode and the drain electrode; And a transparent electrode formed on the contact hole and the passivation layer, the transparent electrode being in contact with any one of the source electrode and the drain electrode through the contact hole.

Preferably, the reflective electrode is formed to be directly connected to any one of the source electrode and the drain electrode.

In order to achieve the second object of the present invention described above, the present invention provides a method of manufacturing a transflective liquid crystal display device in which a pixel portion is divided into a thin film transistor region, a reflective region, and a transmission region, wherein Forming a gate electrode; Forming a gate insulating film on the substrate including the gate electrode; Forming an active pattern on a gate insulating film on the gate electrode; Forming an organic insulating layer on the active pattern and the gate insulating layer; Forming a plurality of irregularities on the surface of the organic insulating film and removing the organic insulating film in the thin film transistor region and the transmission region; Simultaneously forming a source / drain electrode on the active pattern and forming a reflective electrode on the organic insulating layer of the reflective region; Forming a protective film on the entire surface of the resultant source / drain and reflective electrodes; Partially etching the passivation layer to form a contact hole exposing either the source electrode or the drain electrode, and simultaneously removing the passivation layer in the transmission region; And forming a transparent electrode on the contact hole and the passivation layer, the transparent electrode being in contact with any one of the source electrode and the drain electrode through the contact hole.

According to another aspect of the present invention for achieving the above-described second object, in the method of manufacturing a semi-transmissive liquid crystal display device in which the pixel portion is divided into a thin film transistor region, a reflective region and a transmissive region, on the substrate of the thin film transistor region. Forming a gate electrode on the substrate; Forming a gate insulating film on the substrate including the gate electrode; Forming an active pattern on a gate insulating film on the gate electrode; Forming an organic insulating layer on the active pattern and the gate insulating layer; Forming a plurality of irregularities on the surface of the organic insulating film and removing the organic insulating film in the thin film transistor region and the transmission region; Simultaneously forming a source / drain electrode on the active pattern and forming a reflective electrode on the organic insulating layer of the reflective region; Forming a protective film on the entire surface of the resultant source / drain and reflective electrodes; Partially etching the passivation layer to form a contact hole exposing any one of the source electrode and the drain electrode; And forming a transparent electrode on the contact hole and the passivation layer, wherein the transparent electrode is in contact with any one of the source electrode and the drain electrode through the contact hole. .

According to the present invention, by forming the source / drain electrodes and the reflective electrodes in the same layer, photolithography processes for forming the reflective electrodes, that is, photoresist coating, exposure, development and etching processes are omitted.

Therefore, by reducing the number of masks from the conventional eight sheets to seven sheets and simplifying the process, it is possible to increase productivity and achieve cost reduction.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Example 1

FIG. 2 is a cross-sectional view of a transflective liquid crystal display device according to a first embodiment of the present invention, in which a pixel portion is divided into a thin film transistor region TFT, a reflective region R, and a transmissive region T. FIG. Illustrated.

Referring to FIG. 2, a gate wiring made of a first metal film such as chromium (Cr) / aluminum-neodymium (AlNd) is formed on an insulating substrate 100 such as glass, quartz, and sapphire. The gate line is connected to a gate line (not shown) extending in a first direction, a gate electrode 102 branched from the gate line, and an end of the gate line to apply a scan voltage to the gate electrode 102a. Gate pads (not shown).

A gate insulating film 104 made of an inorganic insulating material, for example, silicon nitride, is formed on the substrate 100 including the gate wiring. On the gate insulating layer 104 on the gate electrode 102a, an active pattern 106 made of amorphous silicon and an ohmic contact pattern 108 made of amorphous silicon doped with n ⁺ are sequentially stacked.

On the gate insulating film 104 except for the thin film transistor region TFT and the transmissive region T, an organic insulating layer 110 including a plurality of irregularities 112 is formed on the surface thereof. That is, in the present exemplary embodiment, the organic insulating layer 110 is formed only in the reflective region R, and the first opening 114 penetrating the organic insulating layer 110 of the transmission region T is formed.

The data line formed of the second metal film is formed on the organic insulating layer 110. The data line extends in a second direction crossing the gate line to divide a pixel portion together with the gate line (not shown), branch from the data line, and the first region of the active pattern 106. A first electrode (source electrode or drain electrode) 116a that overlaps, a second electrode (drain electrode or source electrode) 116b that overlaps the second region facing the first region, and an end of the data line And a data pad (not shown) connected to apply a signal voltage to the first electrode. Hereinafter, the first electrode 116a is called a source electrode, and the second electrode 116b is called a drain electrode. Accordingly, the gate electrode 102, the gate insulating film 104, the active pattern 106, the ohmic contact pattern 108, the source electrode 116a, and the drain electrode 116b are disposed in the thin film transistor region TFT on the substrate 100. A thin film transistor 118 is formed.

On the organic insulating layer 110, a reflective electrode 116c is formed on the same layer as the data line including the source / drain electrodes 116a and 116b and used as a reflector and a pixel electrode. Therefore, the second metal film used as the source / drain electrodes 116a and 116b and the reflective electrode 116c should be formed of a material having high reflectance. Preferably, the second metal film is formed of any one single layer selected from the group of aluminum (Al), aluminum alloy (Al alloy), silver (Ag), and silver alloy (Ag alloy). Alternatively, the second metal film is laminated on any one of the first layer and the first layer selected from the group of chromium (Cr), titanium (Ti), and molybdenum (MoW) and made of aluminum (Al) or silver (Ag). It is formed of a composite layer comprising a second layer made up.

A passivation layer 120 may be formed on the data line, the reflective electrode 116c, and the organic insulating layer 110, and may be formed of an inorganic insulating material such as silicon nitride and have a contact hole 122 exposing the drain electrode 116b. have. In the present exemplary embodiment, the passivation layer 120 is formed in a region other than the transmission region T, that is, the thin film transistor region TFT and the reflection region R. That is, the second opening 124 penetrating the passivation layer 120 of the transmission region T is formed to have a size corresponding to the first opening 114 penetrating the organic insulating layer 110 of the transmission region T. .

The pixel electrode transparent electrode 126 is formed on the contact hole 122 and the passivation layer 120 to be in contact with the drain electrode 116b through the contact hole 122. Although not shown, a gate pad electrode and a data pad electrode formed of the same layer as the transparent electrode 126 are formed on the passivation layer 120 of the pad part.

Since the pixel electrode receives an image signal from the thin film transistor 118 and generates an electric field together with an electrode (not shown) of the color filter substrate, the pixel electrode should be electrically connected to the drain electrode 116b of the thin film transistor 118. . Therefore, in order to use the reflective electrode 116c formed of the same layer as the source / drain electrodes 116a and 116c as the pixel electrode, the reflective electrode 116c is connected to the drain electrode 116b or the transparent electrode 126 ) According to the present exemplary embodiment, the reflective electrode 116c is drained by contacting the transparent electrode 126 with the reflective electrode 116c in the transparent region T in which the passivation layer 120 and the organic insulating layer 110 are not formed. It is electrically connected to the electrode 116b. That is, the transparent electrode 126 is continuously formed along inner sidewalls and bottom surfaces of the first and second openings 114 and 124 passing through the organic insulating layer 110 and the passivation layer 120 in the transmission region T. As a result, the first and second openings 114 and 124 contact the reflective electrode 116c.

3A to 3E are cross-sectional views illustrating a method of manufacturing a transflective liquid crystal display device according to a first embodiment of the present invention.

Referring to FIG. 3A, after depositing a first metal film made of about 500 μs of chromium (Cr) and about 2500 μs of aluminum-neodymium (AlNd) on a substrate 100 made of an insulating material such as glass, quartz, or ceramic, The first metal layer is patterned by a photolithography process using a first mask to be connected to a gate line (not shown) extending in a first direction, a gate electrode 102 branched from the gate line, and an end of the gate line. A gate wiring including a gate pad (not shown) for applying a scan voltage to the gate electrode 102 is formed.

Silicon nitride is deposited on the entire surface of the substrate 100 on which the gate wiring is formed by a plasma-enhanced chemical vapor deposition (PECVD) method to form a gate insulating film 104.

An amorphous silicon film, for example, is deposited on the gate insulating film 104 to a thickness of about 2000 microseconds by a PECVD method, and an n ⁺ doped amorphous silicon film, for example, as an ohmic contact layer is deposited on the gate insulating film 104 by a PECVD method. Deposit to thickness. At this time, the active layer and the ohmic contact layer are deposited in-situ in the same chamber of the PECVD facility. Subsequently, the layers are patterned by a photolithography process using a second mask to form an active pattern 106 made of an amorphous silicon film on the gate insulating film 104 on the gate electrode 102 and an n ⁺ doped amorphous silicon film. An ohmic contact pattern 108 is formed.

Next, a photosensitive organic material is coated on the ohmic contact pattern 108 and the gate insulating layer 104 to form an organic insulating layer 110.

Referring to FIG. 3B, after the lens is exposed to the surface of the organic insulating layer 110 by an exposure process using a third mask, the organic insulating layer of the thin film transistor region TFT and the transmission region T is formed using the fourth mask. 110) is exposed. Subsequently, the organic insulating layer 110 is developed using a tetramethylammonium hydroxide (TMAH) developer. Then, a plurality of irregularities 112 for light scattering are formed on the surface of the organic insulating layer 110, and the organic insulating layer 110 of the thin film transistor region TFT and the transmission region T is removed. Preferably, the unevenness 112 has a major inclination of about 5 to 15 degrees. Here, the portion from which the organic insulating layer 110 is removed in the transmission region T becomes the first opening 114.

Referring to FIG. 3C, a second metal film is deposited on the entire surface of the resultant to a thickness of about 1500 to 4000 mm 3, and then the second metal film is patterned by a photolithography process using a fifth mask to form data lines. The data line may be connected to a data line (not shown) orthogonal to the gate line, a source electrode 116a and a drain electrode 116b branching from the data line, and connected to an end of the data line. ) A data pad (not shown) for applying a signal voltage.

At the same time, a reflective electrode 116c made of the second metal film is formed on the organic insulating film 110 in the reflective region R. The reflective electrode 116c is used as a reflector and a pixel electrode.

Thereafter, the exposed ohmic contact pattern 110 between the source electrode 116a and the drain electrode 116b is removed by a reactive ion etching (RIE) method. Then, an exposed active region between the source electrode 116a and the drain electrode 116b is provided to the channel region of the thin film transistor 118.

Referring to FIG. 3D, as described above, an inorganic insulating material such as silicon nitride is deposited on the entire surface of the resultant on which the data line and the reflective electrode 116c are formed to form a protective film 120. The passivation layer 120 serves to secure the reliability of the transistor and the pad and to improve the adhesion of the integrated circuit portion during COG bonding.

Subsequently, the protective layer 120 is partially etched by a photolithography process using a sixth mask to form a contact hole 122 exposing the drain electrode 116b, and the protective layer 120 of the transmission region T. Is removed to form the second opening 124. At the same time, although not shown, first and second pad contact holes are formed to expose the gate pad and the data pad, respectively. Preferably, the second opening 124 is formed to have a size corresponding to the first opening 114 penetrating the organic insulating layer 110 in the transmission region T.

Referring to FIG. 3E, after depositing a transparent conductive film such as ITO or IZO on the entire surface of the resultant in which the contact hole 122 is formed, the contact hole 122 is patterned by patterning the transparent conductive film by a photolithography process using a seventh mask. The pixel electrode transparent electrode 126 in contact with the drain electrode 116b is formed. At the same time, although not shown, a gate pad electrode and a data pad electrode formed of the transparent conductive film are formed on the passivation layer 120 of the pad part.

In the present exemplary embodiment, the transparent electrode 126 may form inner sidewalls and bottom surfaces of the first and second openings 114 and 124 passing through the organic insulating layer 110 and the passivation layer 120 in the transmission region T. As a result of the continuous formation, the first and second openings 114 and 124 are in contact with the reflective electrode 116c. Accordingly, the reflective electrode 116c is electrically connected to the drain electrode 116b through the transparent electrode 126.

As described above, according to the first embodiment of the present invention, the photolithography process for forming the reflective electrode 116c is omitted by forming the reflective electrode 116c in the same layer as the source / drain electrodes 116a and 116b. do. Accordingly, the number of masks is reduced from the conventional eight to seven, and one photo process and one etching process including application, exposure and development of the photoresist film are omitted, thereby simplifying the process.

In the transflective liquid crystal display device according to the first embodiment described above, the cell gap (that is, the thickness of the liquid crystal layer formed between the color filter substrate and the thin film transistor substrate) in the transmission region T is equal to the reflection region R. Has an optical mode of double cell gap that is larger than the cell gap. In addition, since the transmission region T and the reflection region R are fixed, the optical characteristics may be optimized for each of the transmission region T and the reflection region R. FIG.

Example 2

4A to 4D are cross-sectional views illustrating a method of manufacturing a transflective liquid crystal display device according to a second exemplary embodiment of the present invention, wherein the pixel portion is a thin film transistor region TFT, a reflection region R, and a transmission region T. A transflective liquid crystal display device divided by FIG.

Referring to FIG. 4A, the gate wiring including the gate electrode 102, the gate insulating layer 104, the active pattern 106, and the ohmic contact pattern (using the two masks as described in FIG. 3A of the first embodiment) are used. After forming 108, a photosensitive organic material is coated on the entire surface of the resultant product to form an organic insulating layer 110.

Subsequently, the surface of the organic insulating film 110 is subjected to lens exposure by an exposure process using a third mask, and then the organic insulating film 110 of the thin film transistor region TFT is exposed using the fourth mask. Then, the organic insulating layer 110 is developed using a tetramethyl-ammonium hydroxide (TMAH) developer. Then, a plurality of irregularities 112 for light scattering are formed on the surface of the organic insulating layer 110, and the organic insulating layer 110 of the thin film transistor region TFT is removed. That is, in the present embodiment, the organic insulating layer 110 is formed in the reflective region R and the transparent region T except for the thin film transistor region TFT.

Referring to FIG. 4B, a second metal film is deposited on the entire surface of the resultant including the organic insulating layer 110 to a thickness of about 1500 to 4000 mm, and then the second metal film is patterned by a photolithography process using a fifth mask. A data line including the / drain electrodes 116a and 116b is formed. At the same time, a reflective electrode 116c made of the second metal film is formed on the organic insulating film 110 in the reflective region R. The reflective electrode 116d is used as a reflector and a pixel electrode, and is formed to be directly connected to the drain electrode 116b in order to receive an image signal from the thin film transistor.

Preferably, the second metal film is formed of any one single layer selected from the group of aluminum (Al), aluminum alloy (Al alloy), silver (Ag), and silver alloy (Ag alloy). Alternatively, the second metal film is laminated on any one of the first layer and the first layer selected from the group of chromium (Cr), titanium (Ti), and molybdenum (MoW) and made of aluminum (Al) or silver (Ag). It is formed of a composite layer comprising a second layer made up.

As such, the source / drain electrodes 116a and 116b and the reflective electrode 116c are formed, and then the exposed ohmic contact pattern 110 between the source electrode 116a and the drain electrode 116b is removed to form a thin film transistor ( 118 to form a channel region.

Referring to FIG. 4C, as described above, an inorganic insulating material such as silicon nitride is deposited on the entire surface of the resultant in which the thin film transistor 118 and the reflective electrode 116c are formed to form a protective film 120. The passivation layer 120 serves to secure the reliability of the transistor and the pad and to improve the adhesion of the integrated circuit portion during COG bonding.

Subsequently, the protective layer 120 is partially etched by a photolithography process using a sixth mask to form a contact hole 122 exposing the drain electrode 116b.

Referring to FIG. 4D, after depositing a transparent conductive film such as ITO or IZO on the contact hole 122 and the passivation layer 120, the transparent conductive film is patterned by a photolithography process using a seventh mask to form the contact hole ( A transparent electrode 126 for a pixel electrode is formed to be electrically connected to the drain electrode 116b through 122.

In the above-described first embodiment, the transparent electrode 126 is a reflective electrode 116c through the first and second openings 114 and 124 passing through the organic insulating layer 110 and the passivation layer 120 in the transmission region T. ), The reflective electrode 116c and the drain electrode 116b of the thin film transistor are electrically connected to each other. In contrast, in the second embodiment, since the organic insulating film 110 and the protective film 120 are also formed on the transmission region T, the reflective electrode 116c is directly connected to the drain electrode 116d.

According to the second embodiment of the present invention described above, by forming the reflective electrode 116c in the same layer as the source / drain electrodes 116a and 116b, the number of masks can be reduced from the conventional eight to seven.

In the transflective liquid crystal display device according to the second embodiment described above, the cell gap in the transmission region T has an optical mode of a single cell gap in which the cell gap of the reflection region R is the same. In addition, since the transmission region T and the reflection region R are not fixed, the transmission region T or the reflection region R can be changed to a desired size by changing only the data wiring mask.

As described above, according to the present invention, by forming the source / drain electrodes and the reflective electrodes in the same layer, photolithography processes for forming the reflective electrodes, that is, photoresist coating, exposure, development and etching processes are omitted.

Therefore, by reducing the number of masks from the conventional eight sheets to seven sheets and simplifying the process, it is possible to increase productivity and achieve cost reduction.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and modified within the scope of the present invention without departing from the spirit and scope of the present invention described in the claims below. It will be appreciated that it can be changed.

Claims (15)

In the semi-transmissive liquid crystal display device in which the pixel portion is divided into a thin film transistor region, a reflection region and a transmission region, A gate electrode formed on the substrate of the thin film transistor region; A gate insulating film formed on the substrate including the gate electrode; An active pattern formed on the gate insulating layer on the gate electrode; An organic insulating film formed on the gate insulating film except for the thin film transistor region and the transmissive region and including a plurality of irregularities on a surface thereof; A source / drain electrode formed on the active pattern; A reflective electrode formed on the organic insulating layer of the reflective region in the same layer as the source / drain electrode; A protective film continuously formed on the source / drain electrode, the reflective electrode, and the organic insulating layer except for the transmission region, and having a contact hole exposing any one of the source electrode and the drain electrode; And And a transparent electrode formed on the contact hole and the passivation layer, the transparent electrode being in contact with one of the source electrode and the drain electrode through the contact hole. The transflective liquid crystal display of claim 1, wherein the transparent electrode is in contact with the reflective electrode in a transmissive region in which the passivation layer and the organic insulating layer are not formed. The transflective liquid crystal display device according to claim 1, wherein the source / drain electrode and the reflective electrode are made of any one single layer selected from the group consisting of aluminum, aluminum alloy, silver and silver alloy. The method of claim 1, wherein the source / drain electrode and the reflective electrode include any one first layer selected from the group of chromium, titanium, and molybdenum, and a second layer laminated on the first layer and made of aluminum or silver. A semi-transmissive liquid crystal display device comprising a composite layer. The transflective liquid crystal display of claim 1, wherein the passivation layer is made of an inorganic insulating material. In the semi-transmissive liquid crystal display device in which the pixel portion is divided into a thin film transistor region, a reflection region and a transmission region, A gate electrode formed on the substrate of the thin film transistor region; A gate insulating film formed on the substrate including the gate electrode; An active pattern formed on the gate insulating layer on the gate electrode; An organic insulating film formed on the gate insulating film except for the thin film transistor region and including a plurality of irregularities on a surface thereof; A source / drain electrode formed on the active pattern; A reflective electrode formed on the organic insulating layer of the reflective region in the same layer as the source / drain electrode; A passivation layer formed on the source / drain electrode, the reflective electrode, and the organic insulating layer, and having a contact hole exposing any one of the source electrode and the drain electrode; And And a transparent electrode formed on the contact hole and the passivation layer, the transparent electrode being in contact with one of the source electrode and the drain electrode through the contact hole. The transflective liquid crystal display of claim 6, wherein the reflective electrode is formed to be directly connected to any one of the source electrode and the drain electrode. In the method of manufacturing a transflective liquid crystal display device in which the pixel portion is divided into a thin film transistor region, a reflection region and a transmission region, Forming a gate electrode on a substrate of the thin film transistor region; Forming a gate insulating film on the substrate including the gate electrode; Forming an active pattern on a gate insulating film on the gate electrode; Forming an organic insulating layer on the active pattern and the gate insulating layer; Forming a plurality of irregularities on the surface of the organic insulating film and removing the organic insulating film in the thin film transistor region and the transmission region; Simultaneously forming a source / drain electrode on the active pattern and forming a reflective electrode on the organic insulating layer of the reflective region; Forming a protective film on the entire surface of the resultant source / drain and reflective electrodes; Partially etching the passivation layer to form a contact hole exposing either the source electrode or the drain electrode, and simultaneously removing the passivation layer in the transmission region; And forming a transparent electrode on the contact hole and the passivation layer, the transparent electrode being in contact with any one of the source electrode and the drain electrode through the contact hole. The method of claim 8, wherein a plurality of irregularities are formed on the surface of the organic insulating layer, and the removing of the organic insulating layer of the thin film transistor region and the transmission region is performed by two exposure processes and one development process using two masks. Method for manufacturing a transflective liquid crystal display device, characterized in that consisting of. The method of claim 8, wherein the source / drain electrode and the reflective electrode are formed of any one single layer selected from the group consisting of aluminum, aluminum alloy, silver, and silver alloy. The method of claim 8, wherein the source / drain electrode and the reflective electrode include any one first layer selected from the group of chromium, titanium, and molybdenum, and a second layer laminated on the first layer and made of aluminum or silver. A method of manufacturing a transflective liquid crystal display device, characterized in that it is formed of a composite layer. The method of claim 8, wherein the passivation layer is formed of an inorganic insulating material. In the method of manufacturing a transflective liquid crystal display device in which the pixel portion is divided into a thin film transistor region, a reflection region and a transmission region, Forming a gate electrode on a substrate of the thin film transistor region; Forming a gate insulating film on the substrate including the gate electrode; Forming an active pattern on a gate insulating film on the gate electrode; Forming an organic insulating layer on the active pattern and the gate insulating layer; Forming a plurality of irregularities on the surface of the organic insulating film and removing the organic insulating film in the thin film transistor region; Simultaneously forming a source / drain electrode on the active pattern and forming a reflective electrode on the organic insulating layer of the reflective region; Forming a protective film on the entire surface of the resultant source / drain and reflective electrodes; Partially etching the passivation layer to form a contact hole exposing any one of the source electrode and the drain electrode; And And forming a transparent electrode on the contact hole and the passivation layer, the transparent electrode being in contact with any one of the source electrode and the drain electrode through the contact hole. The method of claim 13, wherein forming a plurality of irregularities on the surface of the organic insulating film and removing the organic insulating film of the thin film transistor region comprises two exposure processes using two masks and one development process. A method of manufacturing a semi-transmissive liquid crystal display device. The method of claim 13, wherein the reflective electrode is formed to be directly connected to any one of the source electrode and the drain electrode.