KR20030010412A - Reflective-transmissive type liquid crystal device and method of manufacturing the same - Google Patents

Abstract

PURPOSE: A transflective LCD and a method for fabricating the same are provided to reflect light from a backlight to transmission windows via a lower reflecting plate for increasing the efficiency of light passing through the transmission windows of the same area, thereby improving the display characteristics in the transmission mode. CONSTITUTION: A transflective LCD includes gate electrodes formed on a substrate(100), a gate insulating film(104) formed on the gate electrodes and the substrate, an active layer(106) formed on the gate insulating film on the gate electrodes, first and second electrodes(110a,110b) formed on the gate insulating film and overlapping both edges of the active layer, an insulating film(112) formed on the first and second electrodes and the gate insulating film and having contact holes(114) for exposing the second electrodes, transparent electrodes(116) formed on the insulating film and connected to the second electrodes via the contact holes, and reflecting electrodes(122) formed on the transparent electrodes and having transmission windows(T) for exposing the transparent electrodes.

Description

Reflective-transmissive type liquid crystal device and method of manufacturing the same

The present invention relates to a reflection-transmissive liquid crystal display device and a manufacturing method thereof, and more particularly, to a reflection-transmissive liquid crystal display device and a method of manufacturing the same that can increase the transmission efficiency.

In today's information society, the role of electronic display devices becomes more and more important, and various electronic display devices are widely used in various industrial fields.

In general, an electronic display device refers to a device that transmits various information to a human through vision. In other words, an electronic display device may be defined as an electronic device that converts electrical information signals output from various electronic devices into optical information signals that can be recognized by human eyes, and serves as a bridge that connects humans and electronic devices. It may be defined as.

In such an electronic display device, when an optical information signal is displayed by a light emitting phenomenon, it is called an emissive display device, and when a light modulation is displayed by reflection, scattering, or interference phenomenon, a light receiving display ( It is called a non-emissive display device. The light emitting display device, also called an active display device, includes a cathode ray tube (CRT), a plasma display panel (PDP), a light emitting diode (LED), and an electroluminescent display (electroluminescent display). display; ELD). In addition, the light receiving display device, which is a passive display device, includes a liquid crystal display (LCD), an electrochemical display (ECD), an electrophoretic image display (EPID), and the like.

Cathode ray tubes (CRTs) used in image display devices such as televisions and computer monitors occupy the highest share in terms of display quality and economy, but have many disadvantages such as heavy weight, large volume and high power consumption. .

However, due to the rapid progress of semiconductor technology, the electronic display device suitable for the new environment, that is, the thin and light, the low driving voltage and the low power consumption of the electronic device, according to the miniaturization, low voltage and low power of various electronic devices, and the miniaturization and light weight of the electronic device, The demand for flat panel display devices with features is rapidly increasing.

Among the various flat panel display devices currently developed, liquid crystal displays are thinner and lighter than other display devices, have low power consumption and low driving voltage, and are widely used in various electronic devices because they can display images close to cathode ray tubes. Is being used.

The liquid crystal display device is composed of two substrates having electrodes formed thereon and a liquid crystal layer inserted therebetween, by applying a voltage to the electrodes to rearrange liquid crystal molecules of the liquid crystal layer to control the amount of transmitted light. Display device. Electrodes are formed on each of the two substrates, and a thin film transistor (TFT) for switching a voltage applied to each electrode is formed on one of the two substrates.

Meanwhile, the liquid crystal display may be classified into a transmissive liquid crystal display displaying an image using an external light source and a reflective liquid crystal display using natural light instead of the external light source. In electronic devices such as clocks and calculators that require minimal power consumption, reflective liquid crystal displays are often used. However, transmissive liquid crystal displays are generally used in notebook computers that require high quality image display.

In the current trend, in order to realize the maximum high quality image while reducing the power consumption, it is possible to take advantage of both the reflection type and the transmission type to obtain the appropriate visibility for the use environment despite the change in the ambient light intensity. Reflective-transmissive liquid crystal display devices have been developed.

1A and 1B are cross-sectional views illustrating a method of manufacturing a conventional reflective-transmissive liquid crystal display device.

Referring to FIG. 1A, after depositing a first metal film for gate wiring on a transparent substrate 10 made of glass, quartz, or sapphire, the first metal film is patterned by a photolithography process using a first mask to form a gate electrode 12. ) And a gate line connected to the gate electrode 12 and including a gate line (not shown) extending in a first direction.

The silicon nitride film is deposited on the gate line and the substrate 10 to form a gate insulating film 14. Amorphous silicon is deposited on the gate insulating layer 14 to form a first semiconductor layer, and n ⁺ doped amorphous silicon is deposited on the gate insulating layer 14 to form a second semiconductor layer. Subsequently, the second semiconductor film and the first semiconductor film are patterned by a photolithography process using a second mask, so that the active layer 16 made of the first semiconductor film, that is, an amorphous silicon film, and the second semiconductor film, that is, n ^An ohmic contact layer 18 made of an amorphous silicon film doped with ⁺ is formed.

After depositing the second metal film for data wiring on the entire surface of the resultant, the second metal film is patterned by a photolithography process using a third mask to define a data line (not shown) and a source / Data wirings including the drain electrodes 20a and 20b are formed. Subsequently, the contact layer 18 exposed using the third mask is removed by an etching process, thereby leaving only the active layer 16 to be a channel region.

Spin-coating a photosensitive organic film on the entire surface of the resultant to form a first insulating film 22 serving as an interlayer insulating film and a protective film, and then exposing and developing the first insulating film 22 using a fourth mask. A first contact hole 24 exposing a portion of the drain electrode 20a is formed. In this case, an uneven portion is formed on the surface of the first insulating layer 22 in order to form a scattering structure of the pixel portion.

After depositing a transparent conductive film such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) provided as a transmission window and a pixel electrode on the first contact hole 24 and the first insulating film 22 The transparent conductive film is patterned by a photolithography process using a fifth mask. Then, the transparent electrode 26 connected to the drain electrode 20b through the first contact hole 24 is formed.

After forming the second insulating film 28 on the transparent electrode 26 and the first insulating film 22, the second insulating film 28 is etched by a photolithography process using a sixth mask to drain the electrode 20b. A second contact hole 30 is formed to expose a portion of the second contact hole 30.

After depositing a reflective conductive film such as aluminum (Al) or silver (Ag) provided as a reflector and a pixel electrode on the second contact hole 30 and the second insulating film 28, a photolithography process using a seventh mask The reflective conductive film is then patterned. Then, the reflective electrode 32 connected to the drain electrode 20b is formed through the second contact hole 30. In this case, an area in which the reflective electrode 32 remains on the transparent electrode 26 becomes a reflection window R, and an area in which only the transparent electrode 26 remains is a transmission window T.

According to the above-mentioned conventional reflection-transmissive liquid crystal display device, since the transmission window and the reflection window are simultaneously formed in one pixel portion, the effective transmission or effective reflection area is reduced as compared with the conventional transmission or reflection panel. For example, in the transmissive mode, light incident on the liquid crystal panel from the backlight assembly attached to the rear side of the liquid crystal panel passes through the transmission window T, and the rest of the light is reflected from the reflection window R. Therefore, there is a high possibility of deterioration of display characteristics compared to the conventional single mode panel, that is, the transmissive or reflective panel.

Accordingly, a first object of the present invention is to provide a reflection-transmissive liquid crystal display device which can improve display characteristics in a transmission mode by increasing the efficiency of light passing through the transmission window.

It is a second object of the present invention to provide a method of manufacturing a reflection-transmissive liquid crystal display device which can improve display characteristics in a transmission mode by increasing the efficiency of light passing through the transmission window.

1A and 1B are cross-sectional views illustrating a method of manufacturing a conventional reflective-transmissive liquid crystal display device.

2 is a cross-sectional view of a reflection-transmissive liquid crystal display device according to a first embodiment of the present invention.

3A to 3F are cross-sectional views illustrating a method of manufacturing the reflection-transmissive liquid crystal display shown in FIG. 2.

4 is a cross-sectional view of a reflection-transmissive liquid crystal display device according to a second embodiment of the present invention.

5A to 5C are plan views illustrating various types of lower reflector plates according to embodiments of the present invention.

<Explanation of symbols for main parts of the drawings>

100, 200: transparent substrate 102, 102a: gate electrode

102b and 210c lower reflector 104 and 204 gate insulating film

106, 206: active layer 108, 208: ohmic contact layer

110a, 110b, 210a, 210b: source / drain electrodes

112, 212: first insulating film 114, 214: first contact hole

116 and 216 transparent electrode 118 and 218 second insulating film

120, 220: second contact hole 122, 222: reflective electrode

The present invention to achieve the first object, a gate electrode formed on a substrate; A gate insulating film formed on the gate electrode and the substrate; An active layer formed on the gate insulating film on the gate electrode; First and second electrodes formed on the gate insulating layer and overlapping both edges of the active layer, respectively; A first insulating layer formed on the first and second electrodes and the gate insulating layer and having a first contact hole exposing the second electrode; A transparent electrode formed on the first insulating layer and connected to the second electrode through the first contact hole; A second insulating film formed on the transparent electrode, the first insulating film, and the first contact hole and having a second contact hole exposing the second electrode; And a reflective electrode formed on the second insulating layer and connected to the second electrode through the second contact hole, the reflective electrode having a transmission window exposing the transparent electrode, and a lower region of the reflective electrode outside the transmission window. Provided is a reflective-transmissive liquid crystal display device, characterized in that at least one lower reflector is formed thereon.

The present invention to achieve the second object, forming a gate electrode on a substrate; Forming a gate insulating film on the entire surface of the resultant product; Forming an active pattern on a gate insulating film on the gate electrode; Forming first and second electrodes overlapping both edges of the active pattern on the gate insulating layer; Forming a first insulating film on the entire surface of the resultant product; Etching the first insulating layer to form a first contact hole exposing the second electrode; Forming a transparent electrode on the first insulating layer, the transparent electrode being connected to the second electrode through the first contact hole; Forming a second insulating film on the entire surface of the resultant product; Etching the second insulating layer to form a second contact hole exposing the second electrode; And forming a reflective electrode on the second insulating film, the reflective electrode having a transmission window connected to the second electrode through the second contact hole and exposing the transparent electrode, before the forming of the first insulating film. And forming at least one lower reflector in a lower region of the reflective electrode outside the transmission window.

According to the present invention, at least one lower reflector formed of the same layer as the gate electrode or the source / drain electrode is formed in the reflective electrode outside the transmission window, that is, the lower region of the reflective window. Then, since the backlight light incident on the reflective window is reflected to the transmission window through the lower reflector, the efficiency of light passing through the transmission window having the same area may be increased to improve display characteristics in the transmission mode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of a reflection-transmissive liquid crystal display device according to a first embodiment of the present invention. 5A to 5C are plan views illustrating various types of lower reflector plates according to embodiments of the present invention.

Referring to FIG. 2, a gate wiring made of a first metal film such as aluminum (Al), chromium (Cr), or molybdenum tungsten (MoW) is formed on the transparent substrate 100. The gate line includes a gate line (not shown) extending in a first direction (ie, a transverse direction) and a gate electrode 102a of a thin film transistor that is part of the gate line. In addition, at least one lower reflector 102b formed of the same layer as the gate line is formed on the substrate 100. The lower reflector 102b does not play any role in the reflection mode, but increases the transmission efficiency by reflecting the backlight incident light to the transmission window in the transmission mode.

The lower reflector 102b is formed in a plurality of circles or polygons as shown in FIGS. 5A and 5B. The lower reflector 102b may be formed in a ring shape surrounding the periphery of the transmission window, and as shown in FIG. 5C, one ring and a plurality of circles are mixed or one ring and a plurality of polygons are mixed. It can be formed in the form. When the lower reflector 102b is formed in a ring shape, the width of the lower reflector 102b may be thicker in an area having sufficient space (a vertical portion in FIG. 5C) and a thinner width in an area where the space is narrow (horizontal portion in FIG. 5C). It may be. In addition, when the lower reflector 102b is formed in a ring shape, the lower reflector 102b may be used as a capacitor interconnect, that is, a lower electrode of the capacitor, without forming a separate capacitor interconnection in the pixel portion.

A gate insulating layer 104 made of an inorganic material, for example, silicon nitride, is formed on the gate wiring, the lower reflector 102b and the substrate 100. On the gate insulating film 104 corresponding to the gate electrode 102a, an ohmic contact layer including an active layer 106 made of a first semiconductor film such as amorphous silicon and a second semiconductor film made of n ⁺ doped amorphous silicon ( 108 are sequentially stacked.

On the ohmic contact layer 108 and the gate insulating layer 104, a data line made of a second metal film such as chromium (Cr) is formed. The data line may include a first electrode (source electrode or drain electrode) 110a overlapping the first region of the active layer 106 and a second electrode overlapping the second region opposite to the first region (drain electrode). Or a data line (not shown) connected to the source electrode 110b and the second electrode 110b and extending in a second direction (that is, a longitudinal direction) crossing the gate line. Hereinafter, the first electrode 110a is called a source electrode, and the second electrode 110b is called a drain electrode.

A first insulating layer 112 serving as an interlayer insulating layer and a protective layer is formed on the source / drain electrodes 110a and 110b and the gate insulating layer 104. The first insulating layer 112 is formed of a photosensitive organic material, and a concave-convex portion for increasing reflection efficiency is formed on a portion of the surface thereof. Preferably, the uneven portion is formed to have a major inclination of about 5 to 15 degrees. A first contact hole 114 is formed through the first insulating layer 112 to expose the drain electrode 110b.

The transparent electrode 116 is formed on the first insulating layer 112 to be connected to the drain electrode 110b through the first contact hole 114 and serve as a transmission window and a pixel electrode. On the transparent electrode 116, a reflective electrode 122 provided as a reflective plate and a pixel electrode is formed through the second insulating layer 118. The reflective electrode 122 is connected to the drain electrode 110b through the second contact hole 120 formed in the second insulating layer 118 over the drain electrode 110b. The pixel electrode formed of the transparent electrode 116 and the reflective electrode 122 receives an image signal from the drain region of the thin film transistor and generates an electric field together with an electrode (not shown) of the upper substrate (ie, the color filter substrate). Do it. In this case, an area where the reflective electrode 122 remains on the transparent electrode 116 becomes a reflection window R, and an area where only the transparent electrode 116 remains is a transmission window T.

According to the first embodiment of the present invention described above, when light generated from a backlight (not shown) attached to the rear surface of the liquid crystal panel is incident on the liquid crystal panel in the transmissive mode, the reflective electrode outside the transmission window (T) The light incident on the reflective window 122 is reflected from the reflective electrode 122 and then reflected by the lower reflector 102b positioned below the reflective window R to pass through the transmission window T. Therefore, since the efficiency of light passing through the transmission window T having the same area is increased as compared with the conventional reflection-transmissive liquid crystal display device, it is possible to improve display characteristics in the transmission mode.

3A to 3F are cross-sectional views illustrating a method of manufacturing the reflection-transmissive liquid crystal display shown in FIG. 2.

Referring to FIG. 3A, after depositing a first metal film such as aluminum (Al), chromium (Cr), or molybdenum tungsten (MoW) on a transparent substrate 100 made of an insulating material such as glass, quartz, or sapphire, A gate including a gate line (not shown) extending in a first direction (that is, a transverse direction) by patterning the first metal layer by a photolithography process using a mask and a gate electrode 102a which is a part of the gate line. Form the wiring. At the same time, at least one lower reflector 102b is formed in the substrate region corresponding to the reflective window of the pixel portion. The lower reflector 102b is formed in a plurality of circles or polygons as shown in FIGS. 5A to 5C, or in a ring shape surrounding the periphery of the transmission window. In addition, the lower reflector 102b may be formed in a form in which one ring and a plurality of circles are mixed or in a form in which one ring and a plurality of polygons are mixed. When the lower reflector 102b is formed in a ring shape, the lower reflector 102b may be used as a capacitor line without separately forming capacitor lines.

Referring to FIG. 3B, a gate insulating film 104 made of an inorganic insulating film such as silicon nitride on the gate wiring, the lower reflecting plate 102b and the substrate 100 is subjected to chemical vapor deposition (CVD). It is formed to a thickness of 4500Å.

After depositing a first semiconductor film made of amorphous silicon on the gate insulating film 104 by a CVD process, a second semiconductor film made of amorphous silicon doped with n ⁺ is deposited thereon by a CVD process. Subsequently, the second semiconductor layer and the first semiconductor layer are patterned by a photolithography process using a second mask to form an active layer 106 and an ohmic contact layer 108 on the gate insulating layer 104 on the gate electrode 102a. To form.

Referring to FIG. 3C, after depositing a second metal film such as chromium (Cr) on the ohmic contact layer 108 and the gate insulating layer 104, the second metal film is patterned by a photolithography process using a third mask. do. Then, a source electrode 110a and a drain electrode 110b overlapping both edges of the active layer 106, and a second direction connected to the drain electrode 110b and intersecting with the gate line (that is, the longitudinal direction). Data line including a data line (not shown) extending in the direction). Subsequently, the ohmic contact layer 108 exposed using the third mask is removed by an etching process, thereby leaving only the active layer 106 to be a channel region.

Referring to FIG. 3D, a photosensitive organic material is coated on the data line and the gate insulating layer 104 to form a first insulating layer 112. The first insulating layer 112 serves as an interlayer insulating layer and a protective layer. Subsequently, the first insulating layer 112 is exposed and developed using a fourth mask to form a first contact hole 114 exposing a portion of the drain electrode 110b. At the same time, an uneven portion is formed on the surface of the first insulating layer 112 to make the reflecting plate of the pixel portion into a scattering structure. The uneven portion serves to improve the viewing angle by scattering light passing through the liquid crystal. Preferably, the uneven portion is formed to have an inclination angle of 5 ° to 15 °.

Referring to FIG. 3E, an indium-tin-oxide (ITO) or an indium-zinc-oxide (IZO) provided on the first contact hole 114 and the first insulating layer 112 as a transmission window and a pixel electrode. A transparent conductive film is deposited. Subsequently, the transparent conductive layer is patterned by a photolithography process using a fifth mask to form a transparent electrode 116 connected to the drain electrode 110b through the first contact hole 114.

Referring to FIG. 3F, an inorganic layer such as silicon nitride is deposited on the transparent electrode 116 and the first insulating layer 112 to form a second insulating layer 118. Subsequently, the second insulating layer 118 is etched by a photolithography process using a sixth mask to form a second contact hole 120 exposing a portion of the drain electrode 1100b.

Subsequently, although not shown, a reflective conductive film such as aluminum (Al) or silver (Ag), which is provided as a reflector and a pixel electrode, is deposited on the second contact hole 120 and the second insulating film 118, and then the seventh contact hole 120 is deposited. The reflective conductive film is patterned by a photolithography process using a mask. Then, as illustrated in FIG. 2, the reflective electrode 122 connected to the drain electrode 110b is formed through the second contact hole 120. In this case, the reflective electrode 122 is removed to expose the transparent electrode 116 below the transparent window T, and the remaining area except the transparent window T is provided as the reflective window (R). do.

4 is a cross-sectional view of a reflection-transmissive liquid crystal display device according to a second embodiment of the present invention.

Referring to FIG. 4, a gate wiring made of a first metal film such as aluminum (Al), chromium (Cr), or molybdenum tungsten (MoW) is formed on the transparent substrate 200. The gate line includes a gate line (not shown) extending in a first direction (ie, a transverse direction) and a gate electrode 202 of a thin film transistor that is part of the gate line.

A gate insulating layer 204 made of an inorganic material, for example, silicon nitride, is formed on the gate line and the substrate 200. On the gate insulating layer 204 corresponding to the gate electrode 202, an ohmic contact layer made of an active layer 206 made of a first semiconductor film such as amorphous silicon and a second semiconductor film made of n ⁺ doped amorphous silicon ( 208 are stacked sequentially.

On the ohmic contact layer 208 and the gate insulating layer 204, a data line made of a second metal film such as chromium (Cr) is formed. The data line may include a first electrode overlapping a first area of the active layer 206, for example, a source electrode 210a and a second electrode overlapping a second area opposite to the first area, for example, a drain electrode 210b. ) And a data line (not shown) extending in a second direction (ie, a longitudinal direction) intersecting the gate line. In addition, at least one lower reflector 210c formed of the same layer as the data line is formed on the gate insulating layer 204. The lower reflector 210c is formed in a plurality of circles or polygons, as shown in FIGS. 5A and 5B. The lower reflector 210c may be formed in a ring shape surrounding the periphery of the transmission window, and as shown in FIG. 5C, one ring and a plurality of circles are mixed or one ring and a plurality of polygons are mixed. Can form in the form.

A first insulating layer 212 serving as an interlayer insulating layer and a protective layer is formed on the source / drain electrodes 210a and 210b, the lower reflector 210c, and the gate insulating layer 204. The first insulating layer 212 is formed of a photosensitive organic material, and a concave-convex portion for increasing reflection efficiency is formed on a portion of the surface thereof. Preferably, the uneven portion is formed to have a major inclination of about 5 to 15 degrees. A first contact hole 214 is formed through the first insulating layer 212 to expose the drain electrode 210b.

The transparent electrode 216 is formed on the first insulating layer 212 to be connected to the drain electrode 210b through the first contact hole 214 and serve as a transmission window and a pixel electrode. On the transparent electrode 216, a reflective electrode 222 provided as a reflective plate and a pixel electrode is formed through the second insulating layer 218. The reflective electrode 222 is connected to the drain electrode 210b through the second contact hole 220 formed in the second insulating layer 218 on the drain electrode 210b. In this case, the reflective electrode 222 is removed to expose the transparent electrode 116 below the transparent window (T), the remaining area other than the transparent window (T) becomes the reflective window (R). .

According to the second exemplary embodiment of the present invention, at least one lower reflector 210c is simultaneously formed when the data line including the source / drain electrodes 210a and 210b is formed. Therefore, in the transmission mode, the backlight light incident on the reflection window R is reflected by the lower reflection plate 210c to pass through the transmission window T, so that the efficiency of light passing through the transmission window T having the same area is increased. It is possible to improve display characteristics by increasing.

As described above, according to the present invention, at least one lower reflector formed of the same layer as the gate electrode or the source / drain electrode is formed on the reflective electrode outside the transmission window, that is, the lower region of the reflective window. Then, since the backlight light incident on the reflective window is reflected to the transmission window through the lower reflector, the efficiency of light passing through the transmission window having the same area may be increased to improve display characteristics in the transmission mode.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and modified within the scope of the present invention without departing from the spirit and scope of the present invention described in the claims below. It will be appreciated that it can be changed.

Claims (15)

A gate electrode formed on the substrate; A gate insulating film formed on the gate electrode and the substrate; An active layer formed on the gate insulating film on the gate electrode; First and second electrodes formed on the gate insulating layer and overlapping both edges of the active layer, respectively; An insulating film formed on the first and second electrodes and the gate insulating film and having a contact hole exposing the second electrode; A transparent electrode formed on the insulating layer and connected to the second electrode through the contact hole; A reflective electrode formed on the transparent electrode and having a transmission window exposing the transparent electrode, At least one lower reflector is formed in the lower region of the reflective electrode outside the transmission window. The reflective-transmissive liquid crystal display device according to claim 1, wherein the lower reflector is formed of a plurality of circular or polygonal shapes. The liquid crystal display of claim 1, wherein the lower reflector is formed in a ring shape surrounding the periphery of the transmission window. The reflective-transmissive liquid crystal display device according to claim 3, wherein the lower reflector is used as a capacitor wiring. The reflective-transmissive liquid crystal display device according to claim 1, wherein the lower reflector is formed in a shape in which one ring and a plurality of circles are combined. The reflection-transmissive liquid crystal display device according to claim 1, wherein the lower reflector is formed in a shape in which one ring and a plurality of polygons are combined. The reflection-transmissive liquid crystal display of claim 1, wherein the lower reflector is formed of the same layer as the gate electrode. The liquid crystal display of claim 1, wherein the lower reflector is formed of the same layer as the first and second electrodes. Forming a gate electrode on the substrate; Forming a gate insulating film on the entire surface of the resultant product; Forming an active pattern on a gate insulating film on the gate electrode; Forming first and second electrodes overlapping both edges of the active pattern on the gate insulating layer; Forming a first insulating film on the entire surface of the resultant product; Etching the first insulating layer to form a first contact hole exposing the second electrode; Forming a transparent electrode on the first insulating layer, the transparent electrode being connected to the second electrode through the first contact hole; Forming a second insulating film on the entire surface of the resultant product; Etching the second insulating layer to form a second contact hole exposing the second electrode; And Forming a reflective electrode on the second insulating layer, the reflective electrode having a transmission window connected to the second electrode through the second contact hole and exposing the transparent electrode; And forming at least one lower reflector in a lower region of the reflective electrode outside the transmission window, before forming the first insulating layer. 10. The method of claim 9, wherein the lower reflector is formed of a plurality of circular or polygonal shapes. 10. The method of claim 9, wherein the lower reflector is formed in a ring shape surrounding the periphery of the transmission window. 10. The method of claim 9, wherein the lower reflector is formed in a shape in which one ring and a plurality of circles are combined. The method of claim 9, wherein the lower reflector is formed in a shape in which one ring and a plurality of polygons are combined. The method of manufacturing a reflection-transmissive liquid crystal display device according to claim 9, wherein the lower reflector is simultaneously formed in the forming of the gate electrode. 10. The method of claim 9, wherein the lower reflector is formed simultaneously in the forming of the first and second electrodes.