KR100965576B1 - Liquid Crystal Display device and method for manufacturing the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same, wherein the embossing pattern is asymmetrically formed to maximize reflection efficiency. The present invention relates to a thin film transistor formed on an insulating substrate, and formed on an insulating substrate including the thin film transistor. An insulating film having an unevenness, an embossing pattern formed on the insulating film and having one end overlapped with the unevenness, and a reflective electrode electrically connected to a portion of the thin film transistor and formed on the insulating film including the embossing pattern. Characterized in that made.

Embossing, Unevenness, Reflection, Transparent, Liquid Crystal Display, Asymmetry

Description

Liquid crystal display device and method for manufacturing the same

1 is a cross-sectional view showing a typical reflective liquid crystal display device

2 is a plan view showing a conventional reflective liquid crystal display device having a reflective electrode having an embossed pattern formed thereon;

3 is a cross-sectional view illustrating a reflective liquid crystal display device taken along a line IV-IV of FIG. 2.

4 is a cross-sectional view showing a conventional embossed pattern form

5 is a cross-sectional view showing a liquid crystal display device according to a first embodiment of the present invention.

6A through 6E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention.

7 is a cross-sectional view showing a liquid crystal display device according to a second embodiment of the present invention.

8A through 8E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention.

9 is a cross-sectional view showing a liquid crystal display device according to a third embodiment of the present invention.

10A to 10F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a third embodiment of the present invention.

11 is a cross-sectional view showing a liquid crystal display device according to a fourth embodiment of the present invention.                 

12A through 12F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a fourth embodiment of the present invention.

13A and 13B are cross-sectional views showing embossing patterns of the present invention.

Explanation of symbols for the main parts of the drawings

41: insulating substrate 42: insulating film

43: metal film pattern 44: embossed pattern

45 contact hole 46 reflecting electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a liquid crystal display device and a method for manufacturing the same having a high reflectance.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELDs), and vacuum fluorescents (VFDs) have been developed. Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, LCD is the most widely used as a substitute for CRT (Cathode Ray Tube) for mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption, and mobile type such as notebook computer monitor. In addition, it has been developed in various ways such as a television to receive and display a room transmission call, a monitor of a computer.

As described above, although various technical advances have been made in order for the liquid crystal display device to serve as a screen display device in various fields, the task of improving the image quality as the screen display device has many advantages and disadvantages.

Therefore, in order to use a liquid crystal display device in various parts as a general screen display device, the key to development is how much high definition images such as high definition, high brightness, and large area can be realized while maintaining the characteristics of light weight, thinness, and low power consumption. It can be said.

Meanwhile, the liquid crystal display displays an image or an image by controlling an electric field applied to a liquid crystal material having dielectric anisotropy to transmit or block light.

In addition, unlike display elements that generate light by themselves, such as EL, CRT, and light emitting diodes (LEDs), the liquid crystal display uses external light without generating light by itself.

The liquid crystal display device may be classified into a transmission type and a reflection type according to a light source to be used, and the transmission type liquid crystal display device is a back light, which is a back light source attached to the rear surface of the liquid crystal panel. The artificial light emitted from) is incident on the liquid crystal to adjust the amount of light according to the arrangement of the liquid crystal to display color.

Accordingly, since the transmissive liquid crystal display uses an artificial back light source, power consumption is disadvantageous, whereas the reflective liquid crystal display device has a structure in which most of the light depends on external natural light or artificial light sources. Power consumption is lower than that of the transmissive liquid crystal display.

1 is a cross-sectional view illustrating a general reflective liquid crystal display device.

As shown in FIG. 1, an upper substrate 13 on which a color filter layer (not shown) and a common electrode 17 are formed, and a lower substrate 11 on which a thin film transistor (not shown) and a reflective electrode 16 are formed. And a liquid crystal 19 interposed between the upper substrate 13 and the lower substrate 11.

Herein, the liquid crystal 19 is an optically anisotropic medium arranged in a predetermined direction by an electric field to control the flow of light.

On the other hand, it is also possible to use any medium having optically anisotropic properties which performs a similar function in place of the liquid crystal 19.

A plurality of optical media are disposed on the outer surfaces of the upper substrate 13 and the lower substrate 11 so as to artificially control the polarization state of light.

That is, the scattering film 21, the retardation plate 23, and the polarizing plate 25 are sequentially stacked on the upper substrate 13.

Here, the scattering film 21 is a device for scattering light to provide a wider viewing angle from the observer's point of view, and the retardation plate 23 is a λ / 4 plate that affects the light propagating to the reflective electrode. The first retardation film having the properties and the second retardation film having the properties of the [lambda] / 2 plate are bonded together.                         

The retardation plate 23 emits a larger amount of light to the outside by inverting the phase of light and providing a phase difference in an off state where no voltage is applied, thereby providing a liquid crystal panel having high luminance characteristics. It is formed to make up.

The polarizing plate 25 transmits light vibrating in the transmission axis direction and absorbs the remaining components.

Hereinafter, a manufacturing method of a conventional reflective liquid crystal display device will be described with reference to the accompanying drawings.

FIG. 2 is a plan view illustrating a conventional reflective liquid crystal display having a reflective electrode having an embossed pattern, and FIG. 3 is a cross-sectional view of the reflective liquid crystal display according to line IV-IV of FIG. 2.

As shown in FIG. 2 and FIG. 3, a thin film transistor T formed by a known technique is formed on a predetermined portion of the lower substrate 11 and on the lower substrate 11 on which the thin film transistor T is formed. The protective film 36 is formed.

A hemispherical embossing pattern 37a made of photo acryl having a predetermined interval is formed on the passivation layer 36.

In this case, the embossing pattern 37a is formed at predetermined intervals on the entire surface of the thin film transistor T in order to improve the reflection angle of light.

The reflective electrode 16 is formed on the passivation layer 36 having the embossed pattern 37a electrically connected to the drain electrode 31 of the thin film transistor.

At this time, the reflective electrode 16 has an embossing pattern on the surface by an embossing pattern 37a formed of an organic insulating film on the lower protective film 36 so that when the light incident from the outside is reflected again, the embossing pattern is emitted. Light incident at various angles at 37a can be collected at a predetermined angle and emitted.

On the other hand, the organic insulating film 38 is formed on the entire surface of the lower substrate 11 including the embossed pattern 37a, and the reflective electrode 16 is formed on the organic insulating film 38.

4 is a cross-sectional view showing a conventional embossed pattern form.

As shown in Fig. 4, the hemispherical embossing pattern 37a formed of the organic insulating film on the protective film 36 has the same pattern in the upper, lower, left, and right sides, so that the same reflectance and viewing angle can be obtained.

That is, θ1 and θ2 have the same angle.

However, the conventional reflective liquid crystal display device has the following problems.

That is, since θ1 and θ2 have an embossed pattern having the same angle as shown in FIG. 4, it is difficult to implement high reflectance because of the same reflectivity and limitations on reflectance.

An object of the present invention is to provide a liquid crystal display device and a manufacturing method for maximizing reflection efficiency by forming an embossed pattern asymmetrically to solve the above problems.

According to an embodiment of the present invention, a liquid crystal display device includes a thin film transistor formed on an insulating substrate, an insulating film formed on an insulating substrate including the thin film transistor, and having an uneven portion at one end thereof, and one side of the uneven surface. And an reflective embossing pattern formed on the insulating film including the embossed pattern, the embossing pattern being overlapped and formed on the insulating film, and electrically connected to a portion of the thin film transistor.

In addition, the manufacturing method of the liquid crystal display according to the present invention comprises the steps of forming an insulating film on the entire surface of the insulating substrate including a thin film transistor; Forming a plurality of embossing patterns having an asymmetric structure on the insulating film; Forming a reflective electrode on an insulating film electrically connected to a portion of the thin film transistor, the embossing pattern being formed, wherein the embossing pattern having the asymmetric structure forms irregularities in a portion of the insulating film; And forming a hemisphere embossing pattern by forming a photo acrylic film pattern on the insulating film so that one end thereof overlaps with the unevenness, and reflowing the photo acrylic film pattern.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

5 is a cross-sectional view illustrating a liquid crystal display device according to a first embodiment of the present invention.

As shown in FIG. 5, a thin film transistor (not shown) is formed on a predetermined portion above the insulating substrate 41, and an insulating film 42 is formed on the insulating substrate 41 on which the thin film transistor is formed.

A plurality of metal film patterns 43 are formed on the insulating film 42 at regular intervals, and a plurality of metal film patterns 43 are formed on the insulating film 42 so that one side thereof overlaps each of the metal film patterns 43. An embossed pattern 44 is formed.

In addition, the reflective electrode 46 is formed on the insulating layer 42 on which the embossing pattern 44 is formed while being electrically connected to the drain electrode of the thin film transistor.

In this case, the reflective electrode 46 has irregularities on the surface by the lower embossing pattern 44 so that when light incident from the outside is reflected again and exits, the light incident to the embossing pattern 44 at various angles is fixed. Can gather at an angle and exit.

In addition, since one side of the embossed pattern 44 overlaps the metal film pattern 43, the embossed pattern 44 has an asymmetric structure, and thus high reflectance can be obtained in a specific direction.

In addition, the reason why the metal layer pattern 43 is inserted is to insert a material having a surface tension different from that of the insulating layer 42 to be asymmetrical when forming the embossing pattern 44.

The thin film transistor is formed on a gate electrode formed in a predetermined region of the insulating substrate 41 by a conventional process, a gate insulating film formed on the entire surface of the insulating substrate including the gate electrode, and a gate insulating film on the gate electrode. A semiconductor layer is formed, and a source electrode and a drain electrode overlapping a portion of the semiconductor layer and formed at predetermined intervals.

The insulating layer 42 may be formed of an inorganic insulating material such as silicon nitride or silicon oxide, or an organic compound of acrylic type, an organic material having a low dielectric constant such as Teflon, BCB (benzocyclobutene), cytotop, or perfluorocyclobutane (PFCB). It may be formed of an insulator.

Meanwhile, the same insulating film as the insulating film 42 may be formed between the metal film pattern 43, the embossing pattern 44, and the reflective electrode 46.

6A through 6E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention.

As shown in FIG. 6A, an insulating film 42 is formed over the entire surface of the insulating substrate 41 on which the thin film transistor is formed.

The insulating layer 42 may be formed of an inorganic insulating material such as silicon nitride or silicon oxide, or an organic compound of acrylic type, an organic material having a low dielectric constant such as Teflon, BCB (benzocyclobutene), cytotop, or perfluorocyclobutane (PFCB). It may be formed of an insulator.

Meanwhile, the method of forming the thin film transistor includes forming a gate electrode in a predetermined region of the insulating substrate 41 by a conventional process, forming a gate insulating film on the entire surface of the insulating substrate including the gate electrode; Forming a semiconductor layer on the gate insulating film on the gate electrode and forming a source electrode and a drain electrode having a predetermined interval while overlapping a portion of the semiconductor layer.

As shown in FIG. 6B, a metal film is deposited on the insulating film 42, and the metal film is selectively removed through a photo and etching process to form a plurality of metal film patterns 43 having a predetermined interval.

Here, the metal film is a metal of aluminum (Al), copper (Cu), tungsten (W), chromium (Cr), molybdenum (Mo), titanium (Ti) or tantalum (Ta), or a mole of MoW, MoTa or MoNb. A molybdenum alloy (Moalloy) or the like may be formed by depositing by CVD or sputtering.

In addition, a material having a surface tension different from that of the insulating film 42 may be deposited without using the metal film.

As shown in FIG. 6C, a photo acrylic film is formed on the entire surface of the insulating substrate 41 including the metal film pattern 43.

Subsequently, the photoacrylic film is selectively patterned by an exposure and development process to form a photoacrylic film pattern having a predetermined interval on the insulating film 42.

Here, one side of the photo acrylic film pattern overlaps each of the metal film patterns 43.

The photo acrylic film pattern is reflowed to form a hemispherical embossing pattern 44 having an asymmetric structure.

Here, the process of reflowing the said photo acryl film pattern is performed at the temperature of 110-160 degreeC.

As shown in FIG. 6D, the insulating layer 42 is selectively removed to expose the drain electrode of the thin film transistor to form the contact hole 45.

As illustrated in FIG. 6E, a conductive opaque metal having excellent reflective properties such as aluminum is deposited on the entire surface of the insulating substrate 41 including the contact hole 45, and the conductive opaque metal is selectively selected through a photo and etching process. And a reflection electrode 46 is formed on the pixel region.

In this case, since the plurality of embossed patterns 44 are formed at regular intervals on the insulating layer 42, the reflective electrode 46 has an uneven structure.

Here, as the opaque metal film, for example, one of an Al film, an Ag film, a MoW film, an Al-Nd alloy film, and a Cr film can be selected and formed.

Meanwhile, before forming the reflective electrode 46, the same insulating film as the insulating film 42 may be formed on the entire surface including the metal film pattern 43 and the embossing pattern 44, and then contact holes and reflective electrodes may be formed. have.

7 is a cross-sectional view illustrating a liquid crystal display device according to a second embodiment of the present invention.

As shown in FIG. 7, a thin film transistor (not shown) is formed on a predetermined portion of the insulating substrate 51, and a first insulating film 52 is formed on the insulating substrate 51 on which the thin film transistor is formed. have.

In this case, the unevenness 52a is formed in a predetermined portion of the first insulating film 52.

An embossing pattern 53 is formed on the first insulating film 52 so that one side thereof overlaps the unevenness 52 a of the first insulating film 52.

In addition, a second insulating film 54 is formed on the entire surface of the insulating substrate 51 on which the embossing pattern 53 is formed, and the reflective electrode is electrically connected to the drain electrode of the thin film transistor on the second insulating film 54. 56 is formed.

At this time, the reflective electrode 56 has irregularities on the surface by the lower embossing pattern 53, and when the light incident from the outside is reflected again and exits, the light incident on the embossing pattern 53 at various angles is fixed. Can gather at an angle and exit.

In addition, the embossed pattern 53 has an asymmetric structure because one side thereof overlaps the concave-convex 52a, thereby obtaining high reflectance in a specific direction.

Here, the first and second insulating layers 52 and 54 may be inorganic insulating materials such as silicon nitride or silicon oxide or acrylic organic compounds, Teflon, BCB (benzocyclobutene), cytope, or perfluorocyclobutane (PFCB). It can be formed from an organic insulator having a low dielectric constant.

8A to 8E are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention.

As shown in FIG. 8A, the first insulating film 52 is formed on the entire surface of the insulating substrate 51 on which the thin film transistor is formed.

Here, the first insulating film 52 may have an inorganic insulating material such as silicon nitride or silicon oxide or a dielectric constant such as acrylic organic compound, Teflon, BCB (benzocyclobutene), cytotope, or perfluorocyclobutane (PFCB). It can be formed with a small organic insulator.

As shown in FIG. 8B, the first insulating layer 52 is selectively removed through a photo-etching process to form a plurality of irregularities 52a in a predetermined region of the first insulating layer 52.

As shown in Fig. 8C, a photo acrylic film is formed on the entire surface of the insulating substrate 51 including the unevenness 52a.

Subsequently, the photoacrylic film is selectively patterned by an exposure and development process to form a photoacrylic film pattern having a predetermined interval on the first insulating film 52.

Here, one side of the photo acrylic film pattern overlaps with the unevenness 52a.

The photoacrylic film pattern is reflowed to form a hemispherical embossing pattern 53 having an asymmetric structure.

Here, the process of reflowing the said photo acryl film pattern is performed at the temperature of 110-160 degreeC.

As shown in FIG. 8D, the second insulating film 54 is formed on the entire surface of the insulating substrate 51 including the embossing pattern 53, and the second insulating film 54 is formed so that the drain electrode of the thin film transistor is partially exposed. 54 and the first insulating film 52 are selectively removed to form a contact hole 55.

Here, the step of forming the second insulating film 54 may be omitted.

As shown in FIG. 8E, a conductive opaque metal having excellent reflective properties such as aluminum is deposited on the entire surface of the insulating substrate 51 including the contact hole 55, and the conductive opaque metal is selectively selected through a photo and etching process. And a reflective electrode 56 are formed on the pixel region.

In this case, since the plurality of embossed patterns 53 are formed at regular intervals on the first insulating layer 52, the reflective electrode 56 has a concave-convex shape.

Here, as the opaque metal film, any one of an Al film, an Ag film, a MoW film, an Al-Nd alloy film, and a Cr film can be selected and formed.

As described above, in the first and second embodiments of the present invention, a method of manufacturing a reflective liquid crystal display device is described, but through the above method, a reflective transmissive liquid crystal display device in which the surface of the reflective part is formed in an uneven shape can be manufactured. Can be.

That is, in the present invention, the reflective electrode serves as a pixel electrode, but a reflective electrode having a substantially uneven structure may be formed, and then a transparent electrode may be formed by a separate process to manufacture a reflective transparent liquid crystal display device. . In this case, the electrode connected to the drain electrode of the thin film transistor is a transparent electrode.

9 is a cross-sectional view of a liquid crystal display according to a third exemplary embodiment of the present invention.

As shown in FIG. 9, a thin film transistor (not shown) is formed on a predetermined portion above the insulating substrate 61, and a first insulating layer 62 is formed on the insulating substrate 61 on which the thin film transistor is formed. have.

A plurality of metal film patterns 46 are formed on the first insulating film 62 at regular intervals, and a predetermined distance on the first insulating film 62 so that one side of the metal film patterns 63 overlaps each other. And a plurality of embossing patterns 64 are formed.

In addition, a reflective electrode 65 is formed in a predetermined region on the first insulating film 62 on which the embossing pattern 64 is formed, and a second insulating film is formed on the entire surface of the insulating substrate 61 including the reflective electrode 65. 66 is formed.

A transparent electrode 68 is formed through the second insulating layer 66 and the first insulating layer 62 to be electrically connected to the drain electrode of the thin film transistor.

At this time, the reflective electrode 65 has irregularities on the surface by the lower embossing pattern 64, and when the light incident from the outside is reflected again and exits, the light incident on the embossing pattern 44 at various angles is fixed. Can gather at an angle and exit.

In addition, since one side of the embossed pattern 64 overlaps the metal film pattern 63, the embossed pattern 64 has an asymmetric structure and thus high reflectance can be obtained in a specific direction.

The thin film transistor may be formed on a gate electrode formed in a predetermined region of the insulating substrate 61 by a conventional process, a gate insulating film formed on the entire surface of the insulating substrate including the gate electrode, and a gate insulating film on the gate electrode. A semiconductor layer is formed, and a source electrode and a drain electrode overlapping a portion of the semiconductor layer and formed at predetermined intervals.

The first and second insulating layers 62 and 66 may be inorganic insulating materials such as silicon nitride or silicon oxide or acrylic organic compounds, Teflon, BCB (benzocyclobutene), cytotop, or PFCB (perfluorocyclobutane). It can be formed from an organic insulator having a low dielectric constant.

The same insulating film as the first insulating film 62 may be formed between the metal film pattern 63, the embossing pattern 64, and the reflective electrode 65.

10A to 10F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a third embodiment of the present invention.

As shown in FIG. 10A, the first insulating film 62 is formed on the entire surface of the insulating substrate 61 on which the thin film transistor is formed.

The first insulating layer 62 may include an inorganic insulating material such as silicon nitride or silicon oxide or a dielectric organic material such as acrylic organic compound, Teflon, BCB (benzocyclobutene), cytotope, or perfluorocyclobutane (PFCB). Can be formed of a small organic insulator.

As shown in FIG. 10B, a metal film is deposited on the first insulating film 62, and the metal film is selectively removed through a photo and etching process to form a plurality of metal film patterns 63 having a predetermined interval. .

Here, the metal film is a metal of aluminum (Al), copper (Cu), tungsten (W), chromium (Cr), molybdenum (Mo), titanium (Ti) or tantalum (Ta), or molybdenum of MoW, MoTa or MoNb. An alloy or the like may be formed by depositing by CVD or sputtering.

In addition, a material having a surface tension different from that of the first insulating layer 62 may be deposited without using the metal film.

As shown in FIG. 10C, a photo acrylic film is formed on the entire surface of the insulating substrate 61 including the metal film pattern 63.

Subsequently, the photoacrylic film is selectively patterned by an exposure and development process to form a photoacrylic film pattern having a predetermined interval on the first insulating film 62.

Here, one side of the photo acrylic film pattern overlaps each of the metal film patterns 63.

The photoacrylic film pattern is reflowed to form a hemispherical embossing pattern 64 having an asymmetric structure.

Here, the step of reflowing the photo acrylic film pattern is carried out at a temperature of 110 ~ 160 ℃.

As shown in FIG. 10D, a conductive opaque metal having excellent reflection characteristics is deposited on the entire surface of the insulating substrate 61 including the embossing pattern 64, and the conductive opaque metal is selectively removed through photo and etching processes. The reflective electrode 65 is formed in a predetermined region on the first insulating layer 62.

In this case, since the plurality of embossed patterns 64 are formed at regular intervals on the first insulating layer 62, the reflective electrode 65 has an uneven structure.

Here, as the opaque metal film, for example, one of an Al film, an Ag film, a MoW film, an Al-Nd alloy film, and a Cr film can be selected and formed.

As shown in FIG. 10E, the second insulating layer 66 is formed on the entire surface of the insulating substrate 61 including the reflective electrode 65, and the second insulating layer 66 is exposed to a predetermined portion of the drain electrode of the thin film transistor. 66 and the first insulating layer 62 are selectively removed to form a contact hole 67.

Here, the second insulating film 66 is the same insulating film as the first insulating film 62.

As shown in FIG. 10F, a transparent metal film is deposited on the entire surface of the insulating substrate 61 including the contact hole 67, and the contact hole 67 is selectively removed by photo and etching processes. The transparent electrode 68 is formed to completely cover the reflective electrode 66 while being electrically connected to the drain electrode.

Here, the transparent metal film is deposited with indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITZO), or the like by CVD or sputtering.

11 is a cross-sectional view illustrating a liquid crystal display device according to a fourth embodiment of the present invention.

As shown in FIG. 11, a thin film transistor (not shown) is formed on a predetermined portion above the insulating substrate 71, and a first insulating layer 72 is formed on the insulating substrate 71 on which the thin film transistor is formed. have.

In this case, an uneven portion 72a is formed in a predetermined portion of the first insulating layer 72.

An embossing pattern 73 is formed on the first insulating film 72 so that one end thereof overlaps with the unevenness 72a of the first insulating film 72.

In addition, an insulating substrate including the reflective electrode 74 is formed by overlapping the embossing pattern 73 in a predetermined region on the first insulating layer 72 on which the embossing pattern 73 is formed. The second insulating film 75 is formed on the entire surface of 71.

The transparent electrode 77 is formed on the second insulating layer 75 while being electrically connected to the drain electrode of the thin film transistor.

At this time, the reflective electrode 74 has irregularities on the surface by the lower embossing pattern 73, and when light incident from the outside is reflected again and exits, the light incident to the embossing pattern 73 at various angles is fixed. Can gather at an angle and exit.

In addition, since one side of the embossed pattern 73 overlaps the unevenness 72a, the embossed pattern 73 has an asymmetric structure and thus high reflectance can be obtained in a specific direction.                     

Here, the first and second insulating layers 72 and 75 may be inorganic insulating materials such as silicon nitride or silicon oxide or acrylic organic compounds, Teflon, BCB (benzocyclobutene), cytope, or perfluorocyclobutane (PFCB). It can be formed from an organic insulator having a low dielectric constant.

12A to 12F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to a fourth embodiment of the present invention.

As shown in FIG. 12A, the first insulating film 72 is formed on the entire surface of the insulating substrate 71 on which the thin film transistor is formed.

Herein, the first insulating layer 72 may have an inorganic insulating material such as silicon nitride or silicon oxide or a dielectric constant such as acrylic organic compound, Teflon, BCB (benzocyclobutene), cytotope, or perfluorocyclobutane (PFCB). It can be formed with a small organic insulator.

As shown in FIG. 12B, the first insulating layer 72 is selectively removed through a photo and etching process to form a plurality of uneven portions 72a in a predetermined region of the first insulating layer 72.

As shown in Fig. 12C, a photo acrylic film is formed on the entire surface of the insulating substrate 71 including the unevenness 72a.

Subsequently, the photoacrylic film is selectively patterned by an exposure and development process to form a photoacrylic film pattern having a predetermined interval on the first insulating film 72.

Here, one side of the photo acrylic film pattern overlaps the unevenness 72a.                     

The photoacrylic film pattern is reflowed to form a hemispherical embossing pattern 73 having an asymmetric structure.

Here, the process of reflowing the said photo acryl film pattern is performed at the temperature of 110-160 degreeC.

On the other hand, although only one hemispherical embossing pattern 73 is shown, it is composed of a plurality of embossing patterns 73.

As shown in FIG. 12D, a conductive opaque metal having excellent reflective properties such as aluminum is deposited on the entire surface of the insulating substrate 71 including the embossed pattern 73, and the conductive opaque metal is selectively selected through a photo and etching process. And the reflective electrode 74 overlapping the embossed pattern 73 is formed in a predetermined region on the first insulating layer 72.

Here, as the opaque metal film, for example, one of an Al film, an Ag film, a MoW film, an Al-Nd alloy film, and a Cr film can be selected and formed.

As shown in FIG. 12E, the second insulating film 75 is formed on the entire surface of the insulating substrate 71 including the reflective electrode 74, and the second insulating film 75 is exposed to expose a predetermined portion of the drain electrode of the thin film transistor. 74 and the first insulating film 72 are selectively removed to form the contact hole 76.

As shown in FIG. 12F, a transparent metal film is deposited on the entire surface of the insulating substrate 71 including the contact hole 76, and the contact hole 76 is selectively removed by photo and etching processes. The transparent electrode 77 is formed to completely cover the reflective electrode 74 while being electrically connected to the drain electrode.

Here, the transparent metal film is deposited with indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITZO), or the like by CVD or sputtering.

13A and 13B are cross-sectional views showing embossing patterns of the present invention.

As shown in FIGS. 13A and 13B, the embossing pattern 44 formed by overlapping one end on the metal film pattern 43 and the embossing pattern 53 formed by overlapping one end of the unevenness 52a have an asymmetric structure. Have

That is, the hemispherical embossing patterns 44 and 53 are formed in an asymmetrical structure in which θ1 and θ2 are different from each other, and thus high reflectance can be obtained in a specific direction.

That is, θ1 and θ2 have the same angle

On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

As described above, the liquid crystal display and the manufacturing method thereof according to the present invention have the following effects.

That is, by having an embossed pattern having an asymmetric structure, high reflectance can be obtained in a specific direction.

Claims (10)

delete delete A thin film transistor formed on an insulating substrate, An insulating film formed on an insulating substrate including the thin film transistor and having irregularities in part; An embossed pattern formed on the insulating film by overlapping one end with the unevenness; And a reflective electrode electrically connected to a portion of the thin film transistor and formed on the insulating film including the embossing pattern. A first insulating film formed on the entire surface of the insulating substrate including the thin film transistor, A metal film pattern formed on the first insulating film; An embossed pattern formed on the first insulating film while one end thereof overlaps the metal film pattern; A reflective electrode formed on a portion of the first insulating film including the embossed pattern; A second insulating film having a contact hole to expose a portion of the thin film transistor and formed on an entire surface of the insulating substrate including the reflective electrode; And a transparent electrode electrically connected to the thin film transistor through the contact hole and formed on the second insulating layer. A thin film transistor formed on an insulating substrate, A first insulating film formed on an insulating substrate including the thin film transistor, the first insulating film having irregularities in part; An embossing pattern formed on the first insulating film with one end overlapping the unevenness; A reflective electrode formed on a portion of the first insulating film including the embossing pattern; A second insulating film having a contact hole to expose a portion of the thin film transistor and formed on an entire surface of the insulating substrate including the reflective electrode; And a transparent electrode electrically connected to the thin film transistor through the contact hole and formed on the second insulating layer. delete delete Forming an insulating film on an entire surface of the insulating substrate including the thin film transistor; Forming a plurality of embossing patterns having an asymmetric structure on the insulating film; And forming a reflective electrode on an insulating film including the embossed pattern and electrically connected to a portion of the thin film transistor, The embossing pattern having the asymmetric structure may include forming irregularities on a portion of the insulating film, forming a photo acrylic film pattern on the insulating film so that one end thereof overlaps with the irregularities, and reflowing the photo acrylic film pattern. Forming a hemispherical embossing pattern comprising the step of forming a liquid crystal display device. Forming a first insulating film on the entire surface of the insulating substrate including the thin film transistor; Forming a metal film pattern on the first insulating film at regular intervals; Forming an embossing pattern on the first insulating film such that one end thereof overlaps the metal film pattern; Forming a reflective electrode on a portion of the first insulating film including the embossing pattern; Forming a second insulating film on an entire surface of the insulating substrate including the reflective electrode; Forming a contact hole by selectively removing the second insulating film and the first insulating film so that a portion of the thin film transistor is exposed; And forming a transparent electrode electrically connected to the thin film transistor through the contact hole. Forming a first insulating film formed on the insulating substrate on which the thin film transistor is formed; Forming a plurality of irregularities on a portion of the first insulating film; Forming an embossing pattern having one end overlapped with the unevenness on the first insulating film; Forming a reflective electrode on a portion of the first insulating film including the embossed pattern; Forming a second insulating film on an entire surface of the insulating substrate including the reflective electrode; Forming a contact hole by selectively removing the second insulating film and the first insulating film so that a portion of the thin film transistor is exposed; And forming a transparent electrode electrically connected to the thin film transistor through the contact hole.

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