KR100943258B1 - Liquid crystal display apparatus and method of fabricating the same - Google Patents

Abstract

A liquid crystal display device for reducing manufacturing costs is disclosed. In a liquid crystal display device, a thin film transistor, a protective film, a pixel electrode, an organic insulating film, and a reflective electrode are formed on a transparent insulating substrate. The organic insulating film is formed on the reflective region, and the reflective electrode is located on the upper surface of the organic insulating film. In forming the pattern of the organic insulating layer, the contact hole region is removed using one mask, and a plurality of irregularities are formed on the upper surface of the organic insulating layer. Thereby, the process for forming the pattern of an organic insulating film can be simplified, and assembly property can be improved.

Reflective-transmissive, organic insulating film, mask

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME}

1 is a cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention.

2A to 2F are cross-sectional views illustrating a manufacturing process of the liquid crystal display shown in FIG. 1.

3 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

4 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

5A through 5F are cross-sectional views illustrating a manufacturing process of the LCD shown in FIG. 4.

6 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100, 200, 300, 400: liquid crystal display 110: transparent insulating substrate

120 thin film transistor 130 gate insulating film

140: protective film 142: contact hole

150, 320: pixel electrodes 160, 210, 310, 410: organic insulating film

170, 330: reflective electrode

The present invention relates to a liquid crystal display device and a manufacturing method thereof, and more particularly, to a liquid crystal display device and a manufacturing method thereof for reducing the manufacturing cost.

In general, a liquid crystal display device that displays an image using light may be classified into a transmissive liquid crystal display device, a reflective liquid crystal display device, and a reflection-transmissive liquid crystal display device according to a method of receiving the light. The transmissive liquid crystal display displays an image using light provided from a built-in backlight assembly. The reflective liquid crystal display displays an image by using external light provided from the outside. The reflection-transmissive liquid crystal display displays an image using the backlight assembly and the natural light.

The reflection-transmissive liquid crystal display displays an image by transmitting the light provided from the backlight assembly provided therein to the liquid crystal panel when the amount of external light provided from the outside is insufficient. On the other hand, in a place where the amount of external light is abundant, the external light is incident and reflected on the liquid crystal panel to display an image.

The liquid crystal panel of the reflection-transmissive liquid crystal display device has a lower substrate having an array layer, an upper substrate having a color filter layer expressing a predetermined color using the light, and coupled to the lower substrate so as to face each other, and the lower and upper portions. And a liquid crystal layer interposed between the substrates.

The array layer is formed in the shape of a thin film transistor matrix which is a switching element for applying and blocking a signal voltage to the liquid crystal layer. A passivation layer, a pixel electrode, an organic insulating layer, and a reflective electrode are sequentially formed on the thin film transistor. The reflective electrode reflects the external light to provide the external light to the color filter layer. In this case, a plurality of irregularities are formed on the organic insulating layer in order to front-reflect the external light to show a uniform luminance distribution. Thus, two masks are required to pattern the organic insulating film. That is, a first mask for forming a contact hole and a second mask that is a half-tone mask for forming the plurality of irregularities are used.

Since the transmissive liquid crystal display does not need to form the plurality of irregularities for front reflection of the external light, only one first mask for forming the contact hole is used when patterning the organic insulating layer.

Therefore, the reflection-transmissive liquid crystal display device requires one more mask for forming the lower substrate than the transmissive liquid crystal display device, and thus the burden of low contrast is great. In addition, since the light must pass through the organic insulating film on which the plurality of irregularities are formed in the transmission region that transmits the light provided from the backlight assembly, the transmittance of the light is lowered and the display quality is lowered.

It is an object of the present invention to provide a liquid crystal display device for simplifying the manufacturing process and reducing the cost of the product.

It is also an object of the present invention to provide a method of manufacturing the above liquid crystal display device.

According to an aspect of the present invention, a liquid crystal display device includes an insulating substrate, a thin film transistor, a protective film, a pixel electrode, an organic insulating film, and a reflective electrode.

The insulating substrate is divided into a transistor region, a transmission region, and a reflection region. The thin film transistor is formed in the transistor region on the insulating substrate. The passivation layer is formed on the insulating substrate on which the thin film transistor is formed, and has a contact hole for exposing a portion of the thin film transistor. The pixel electrode is formed on the contact hole and the passivation layer of the transmissive and reflective region and contacts the thin film transistor through the contact hole. The organic insulating layer is formed on the pixel electrode in the reflective region. The reflective electrode is formed on the organic insulating film and reflects light provided from the outside.

Further, in the method for manufacturing a liquid crystal display device according to one feature for realizing the above object of the present invention, first, a thin film transistor is formed in the transistor region on the insulating substrate. A protective film is formed on the substrate on which the thin film transistor is formed. A portion of the passivation layer is etched to form a contact hole for exposing one side of the thin film transistor. A pixel electrode is formed on the passivation layer of the contact hole, the transmission region, and the reflection region. An organic insulating layer is deposited on the passivation layer on which the contact hole and the pixel electrode are formed. A portion of the organic insulating film of the transistor region and the transmissive region and the organic insulating film of the reflective region are removed, and a plurality of uneven portions are formed on an upper surface of the organic insulating film. A reflective electrode is formed on the organic insulating film.

According to the liquid crystal display and the manufacturing method thereof, the process for forming the pattern of the organic insulating layer can be simplified, and the manufacturing cost can be reduced.

Hereinafter, with reference to the accompanying drawings, it will be described in detail the present invention.

1 is a cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the liquid crystal display device 100 according to the present invention includes a transparent insulating substrate 110, a thin film transistor (TFT) 120 formed on the transparent insulating substrate 110, The passivation layer 140 formed on the transparent insulating substrate 110 on which the TFT 120 is formed, the pixel electrode 150 formed on the passivation layer 140, and the organic insulating layer 160 formed on the pixel electrode 150. And a reflective electrode 170 formed on the organic insulating layer 160.

In more detail, the TFT 120, which is a switching element, is formed in the TFT region D1 of the transparent insulating substrate 110. The TFT 120 branches from a gate line (not shown) to receive a gate signal, an active layer 122 formed on the gate electrode 121, and an upper portion of the active layer 122. And a source and drain electrodes 124 and 125 formed on the ohmic contact layer 123 and the ohmic contact layer 123.                     

A gate insulating film, which is an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN _X ), which has good adhesion to a metal material and suppresses formation of an air layer at an interface on the transparent insulating substrate 110 on which the gate electrode 121 is formed. 130 is formed.

The active layer 122 made of amorphous silicon and the ohmic contact layer 123 made of n + amorphous silicon are sequentially stacked on the gate insulating layer 130 at a position corresponding to the gate electrode 121. In this case, the ohmic contact layer 123 may be viewed at a central portion to form a channel region exposing a portion of the active layer 122.

The source and drain electrodes 124 and 125 are respectively provided on an upper surface of the ohmic contact layer 123 separated into two around the central portion. One end of the source and drain electrodes 124 may be disposed on an upper surface of the ohmic contact layer 123, and the other end thereof may be disposed on an upper surface of the gate insulating layer 130. In other words, the source and drain electrodes 124 contact the ohmic contact layer 123 and the gate insulating layer 130 of the TFT region D1.

The passivation layer 140 is provided on the transparent insulating substrate 110 on which the TFT 120 is formed. The passivation layer 140 is applied to the entire area of the transparent insulating substrate 110. In this case, the passivation layer 140 is positioned above the TFT 120 in the TFT region D1 to contact the source and drain electrodes 124 and 125. The passivation layer 140 is positioned on the top surface of the gate insulating layer 130 in the transmission region D2 and the reflection region D3. A portion of the passivation layer 140 is etched to have a contact hole 142 for exposing a portion of the drain electrode 125.

The pixel electrode 150 is disposed on the passivation layer 140. The pixel electrode 150 is positioned in the contact hole 142 and the transmission and reflection regions D2 and D3. In this case, the pixel electrode 150 is in contact with the drain electrode 125 using the contact hole 142. Therefore, the pixel electrode 150 may receive a signal voltage from the TFT 120 using the contact hole 142.

The organic insulating layer 160 is provided on the pixel electrode 150. The organic insulating layer 160 is positioned in the reflective region D3. A plurality of recesses and protrusions 161 for front reflection of external light incident from the outside of the liquid crystal display device 100 are formed on the upper surface of the organic insulating layer 160.

The reflective electrode 170 is provided on the organic insulating layer 160. The reflective electrode 170 reflects the external light incident on the transparent insulating substrate 110, and is formed on the uneven portions 161 of the organic insulating layer 160 to frontally reflect the external light. .

The organic insulating layer 160 and the reflective electrode 170 are formed in the reflective region D3. On the other hand, since the organic insulating layer 160 and the reflective electrode 170 are not formed in the transmission region D2, an interior provided from a backlight assembly (not shown) provided under the transparent insulating substrate 110. It transmits light.

Therefore, the liquid crystal display 100 displays an image using the internal light transmitted through the transmission area D2 in the transmission mode, and the reflection electrode 170 of the reflection area D3 in the reflection mode. An image is displayed using the external light reflected by the.

As described above, in the liquid crystal display device 100 according to the present invention, the organic insulating layer 160 exists only in the reflective region D3 and does not exist in the transmission region D2. Therefore, when the liquid crystal display 100 operates in the transmissive mode, since the internal light provided from the backlight assembly does not transmit through the organic insulating layer 160, the transmittance of the light in the transmissive mode may be improved.

2A to 2F are cross-sectional views illustrating a manufacturing process of the liquid crystal display shown in FIG. 1.

Referring to FIG. 2A, after depositing a conductive metal on the transparent insulating substrate 110 formed of a material such as glass, quartz, or sapphire, patterning the conductive metal through a photolithography process using a first mask to form the gate line. And the gate electrode 121. In this case, the gate line extends in the first direction, and the gate electrode 121 protrudes a predetermined area from the gate line and is formed in the TFT region D1. Aluminum (Al), chromium (Cr), molybdenum (Mo), etc. are used as the conductive metal for forming the gate line and the gate electrode 121, and aluminum (Al) is mainly used. In FIG. 2A, the gate electrode 121 is formed as a single layer, but a double layer may be formed.

The gate insulating layer 130 is deposited on the transparent insulating substrate 110 on which the gate line and the gate electrode 121 are formed. The gate insulating layer 130 is deposited by a plasma-enhanced chemical vapor deposition (PECVD) method, and preferably has a thickness of about 4500 kPa.

After the gate insulating layer 130 is formed, an amorphous silicon film and an amorphous silicon film doped with an n + layer are sequentially deposited by the PECVD method. The amorphous silicon film and the amorphous silicon film doped with the n + layer are patterned by a photolithography process using a second mask to form the active layer 122 and the ohmic contact layer 123 in the TFT region D1. . In this case, the center portion of the ohmic contact layer 123 is partially etched to expose a portion of the active layer 122 to form a channel region. The active layer 122 preferably has a thickness of about 2000 GPa, and the ohmic contact layer 123 preferably has a thickness of about 500 GPa.

The conductive metal is deposited on the gate insulation 130 on which the active layer 122 and the ohmic contact layer 123 are formed. The conductive metal is patterned through a photolithography process using a third mask to form a data line (not shown), the source and drain electrodes 124 and 125 for transmitting a data signal. In this case, the source electrode 124 protrudes from the data line to a predetermined area and is formed in the TFT region D1. The channel region is positioned between the source electrode 124 and the drain electrode 125.

The passivation layer 140 is deposited on the source and drain electrodes 124 and 125 and on the gate insulating layer 130. The passivation layer 140 is positioned above the TFT 120 in the TFT region D1 and above the gate insulating layer 130 in the transmission and reflection regions D2 and D3. The passivation layer 140 is made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN _X ), and preferably has a thickness of about 2000 μs.

Referring to FIG. 2B, the passivation layer 140 forms a contact hole 142 by etching a portion of the passivation layer 140 through a photolithography process using a fourth mask.

Referring to FIG. 2C, a pixel electrode 150 made of a conductive transparent material such as indium tin oxide (ITO) is coated on the contact hole 142 and the passivation layer 140. The pixel electrode 150 is removed from the TFT region D1 in the remaining region of the TFT region D1 except for the contact hole 142 through a photolithography process using a fifth mask. Accordingly, the pixel electrode 150 is formed on the contact hole 142 and the passivation layer 140 in the reflective and transmissive regions D2 and D3.

2D and 2E, the organic insulating layer 160 is deposited on the entire region of the transparent insulating substrate 110 on which the pixel electrode 150 is formed. In the organic insulating layer 160, the organic insulating layer 160 positioned in the TFT region D1 and the transmission region D2 is removed through a photolithography process using a sixth mask. Therefore, the organic insulating layer 160 is positioned on the pixel electrode 150 of the reflective region D3. In this case, the organic insulating layer 160 of the reflective region D3 is partially removed to form the columnar organic insulating layer 160. The columnar organic insulating layer 160 is formed to be spaced apart at a predetermined interval.

Referring to FIG. 2F, in the organic insulating layer 160 spaced apart from each other by the predetermined interval, the columnar organic insulating layer 160 is melted by heat treatment to generate a reflow. Due to the reflow, a plurality of irregularities 161 are formed on the upper surface of the organic insulating layer 160. Preferably, the plurality of irregularities 161 have a major inclination of about 5 to 15 degrees. The organic insulating layer 160 having the plurality of irregularities 161 is cured by a baking process.

A conductive metal for forming the reflective electrode 170 is deposited on the entire region of the transparent insulating substrate 110 on which the organic insulating layer 160 is formed. It is preferable that the said conductive metal has a thickness of about 1500-4000 kPa. The conductive metal may be removed to form the reflective electrode 170 by removing the conductive metal of the TFT region D1 and the transmission region D2 through a photolithography process using a seventh mask. That is, as shown in FIG. 1, the reflective electrode 170 is positioned on the reflective organic insulating layer 160, and reflects the external light in the reflective mode to display an image. In this case, the reflective electrode 170 has an embossed shape due to the plurality of irregularities 161 of the organic insulating layer. Since the reflective electrode reflects the external light in front by using the embossing, the front brightness may be improved.

As described above, the liquid crystal display device 100 according to the present invention may form the liquid crystal display device 100 using seven masks, unlike the existing one using eight masks. Therefore, since the liquid crystal display device 100 can be manufactured using less expensive masks, cost can be reduced.

In addition, when the pixel electrode is deposited on the organic insulating layer, the pixel electrode must be deposited at low temperature, and a pretreatment step for forming the patterning of the pixel electrode is further required. However, since the organic insulating layer 160 is formed on the pixel electrode 150, the liquid crystal display device 100 according to the present invention can deposit the pixel electrode 150 at a high temperature.

3 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

Referring to FIG. 3, the liquid crystal display device 200 according to another exemplary embodiment of the present invention may include the liquid crystal display device 100 according to the exemplary embodiment of the present invention illustrated in FIG. 1 except for the organic insulating layer 210. Have the same configuration. Therefore, in the description of another embodiment according to the present invention illustrated in FIG. 3, the same reference numerals are given to components that perform the same function as the liquid crystal display device 100 illustrated in FIG. A separate description is omitted.

The liquid crystal display device 200 according to another exemplary embodiment of the present invention may include a transparent insulating substrate 110, a TFT 120 formed on the transparent insulating substrate 110, and the transparent insulating substrate on which the TFT 120 is formed. A passivation layer 140 formed on the passivation layer 110, a pixel electrode 150 formed on the passivation layer 140, an organic insulating layer 210 formed on the pixel electrode 150, and a reflective electrode formed on the organic insulating layer 210. And 170.

The organic insulating layer 210 formed on the pixel electrode 150 of the reflective region D3 is formed of a plurality of protrusions, and each of the protrusions 211 has a hemispherical shape to frontally reflect the external light. Preferably, the protrusion 211 has a major inclination of about 5 to 15 degrees. The plurality of protrusions are formed to be spaced apart from each other at predetermined intervals, and the pixel electrode 150 is exposed between the spaces.

The reflective electrode 170 provided on the organic insulating layer 210 is positioned on the plurality of protrusions and reflects the external light. At this time. The reflective electrode 170 is in contact with the pixel electrode 150 exposed between the separation spaces.

4 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

Referring to FIG. 4, the liquid crystal display 300 according to another exemplary embodiment of the present invention may include the present invention illustrated in FIG. 1 except for the organic insulating layer 310, the pixel electrode 320, and the reflective electrode 330. It has the same configuration as the liquid crystal display device 100 according to the embodiment. Therefore, in the description of another embodiment according to the present invention illustrated in FIG. 4, the same reference numerals are given to components that perform the same functions as the liquid crystal display device 100 illustrated in FIG. A separate description is omitted.

The liquid crystal display 300 may include a transparent insulating substrate 110, a TFT 120 formed on the transparent insulating substrate 110, and a protective film formed on the transparent insulating substrate 110 on which the TFT 120 is formed. 140, an organic insulating layer 310 formed on the passivation layer 140, a pixel electrode 320 formed on the organic insulating layer 310, and a reflective electrode 330 formed on the pixel electrode 320.                     

The TFT 120 is formed in the TFT region D1 of the transparent insulating substrate 110, and the passivation layer 140 is formed on the transparent insulating substrate 110 on which the TFT 120 is formed.

The passivation layer 140 is positioned on the source and drain electrodes 124 and 125 of the TFT 120 and is disposed on the gate insulating layer 130 of the transmission and reflection regions D2 and D3. A portion of the passivation layer 140 may be etched to have a contact hole 142 for exposing a portion of the drain electrode 125.

The organic insulating layer 310 is provided on the passivation layer 140. The organic insulating layer 310 is positioned in the reflective region D3, and a plurality of irregularities 311 are formed on an upper surface thereof.

The pixel electrode 320 is disposed on the organic insulating layer 310. The pixel electrode 320 is formed in the contact hole 142 to contact the drain electrode 125. The pixel electrode 320 is positioned in a region where the contact hole 142 is formed in the TFT region D1, and is positioned on an upper surface of the passivation layer 140 in the transmission region D2, and the reflective region D3. In the upper surface of the organic insulating layer 310.

The reflective electrode 330 is provided on the pixel electrode 320. The reflective electrode 330 is positioned in the reflective region D3 and has an embossed shape due to the plurality of uneven parts 311 formed on the top surface of the organic insulating layer 310. Therefore, the reflective electrode 330 front-reflects the external light using the embossed shape.

As described above, the liquid crystal display 300 removes the organic insulating layer 310 in the transmission region D2. Therefore, the transmittance of the internal light provided to the transparent insulating substrate 110 from the backlight assembly provided under the transparent insulating substrate 110 can be improved. As a result, the same luminance as that of the transmissive liquid crystal display can be obtained, and the display characteristics in the transmissive mode can be improved.

5A through 5F are cross-sectional views illustrating a manufacturing process of the LCD shown in FIG. 4.

Referring to FIG. 5A, after depositing a conductive metal on the transparent insulating substrate 110 formed of a material such as glass, quartz, or sapphire, patterning the conductive metal through a photolithography process using a first mask to form the gate line. And the gate electrode 121. In this case, the gate line extends in the first direction, and the gate electrode 121 protrudes a predetermined area from the gate line and is formed in the TFT region D1. Aluminum (Al), chromium (Cr), molybdenum (Mo), etc. are used as the conductive metal for forming the gate line and the gate electrode 121, and aluminum (Al) is mainly used. In FIG. 5A, the gate electrode 121 is formed as a single layer, but a double layer may be formed.

The gate insulating layer 130 is deposited on the transparent insulating substrate 110 on which the gate line and the gate electrode 121 are formed. The gate insulating layer 130 is deposited by a PECVD method, and preferably has a thickness of about 4500 kPa.

After the gate insulating layer 130 is formed, an amorphous silicon film and an amorphous silicon film doped with an n + layer are sequentially deposited by the PECVD method. The amorphous silicon film and the amorphous silicon film doped with the n + layer are patterned by a photolithography process using a second mask to form the active layer 122 and the ohmic contact layer 123 in the TFT region D1. . In this case, the center portion of the ohmic contact layer 123 is partially etched to expose a portion of the active layer 122 to form a channel region. The active layer 122 preferably has a thickness of about 2000 GPa, and the ohmic contact layer 123 preferably has a thickness of about 500 GPa.

The conductive metal is deposited on the gate insulation 130 on which the active layer 122 and the ohmic contact layer 123 are formed. The conductive metal is patterned through a photolithography process using a third mask to form a data line (not shown), the source and drain electrodes 124 and 125 for transmitting a data signal. The source electrode 124 protrudes from the data line in a predetermined area and is formed in the TFT region D1, and the data line extends in a second direction perpendicular to the first direction. In this case, the channel region is positioned between the source electrode 124 and the drain electrode 125.

The passivation layer 140 is deposited on the source and drain electrodes 124 and 125 and on the gate insulating layer 130. The passivation layer 140 is positioned above the TFT 120 in the TFT region D1 and above the gate insulating layer 130 in the transmission and reflection regions D2 and D3. The passivation layer 140 is made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN _X ), and preferably has a thickness of about 2000 μs.

Referring to FIG. 5B, a portion of the passivation layer 140 is etched through a photolithography process using a fourth mask to expose a portion of the drain electrode 125. To form.

5C and 5D, the organic insulating layer 310 is deposited on the entire region of the transparent insulating substrate 110 on which the passivation layer 140 is formed. The organic insulating layer 160 is removed from the organic insulating layer 310 of the TFT region D1 and the transparent region D2 by a photolithography process using a fifth mask. Therefore, the organic insulating layer 310 is positioned on the passivation layer 140 of the reflective region D3. In this case, the organic insulating layer 310 of the reflective region D3 is partially removed to form the columnar organic insulating layer 310. The columnar organic insulating layer 310 is formed to be spaced apart at a predetermined interval.

Referring to FIG. 5E, the columnar organic insulating layer 320 has a reflow in which its shape is deformed by heat treatment. Due to the reflow, a plurality of irregularities 311 are formed on the upper surface of the organic insulating layer 310. Preferably, the plurality of unevennesses 311 have a main slope of about 5 to 15 degrees. The organic insulating layer 310 on which the plurality of unevennesses 311 are formed is cured by a baking process.

Referring to FIG. 5F, a pixel electrode 320 made of a conductive transparent material such as ITO is coated on the entire region of the transparent insulating substrate 110 on which the organic insulating layer 310 is formed. The pixel electrode 320 removes the pixel electrode 320 positioned in the TFT region D1 through a photolithography process using a sixth mask. In this case, the pixel electrode 320 formed in the contact hole 142 is left as it is. Accordingly, the pixel electrode 320 is positioned in the contact hole 142 in the TFT region D1, and is positioned on the top surface of the passivation layer 140 in the transmission region D2, and in the reflective region D3. It is located on the upper surface of the organic insulating layer 310.

After the pixel electrode 320 is formed, the conductive metal is deposited on the entire area of the transparent insulating substrate 110. It is preferable that the said conductive metal has a thickness of about 1500-4000 kPa. The conductive metal is removed to form the reflective electrode 330 by removing the conductive metal of the TFT region D1 and the transmission region D2 through a photolithography process using a seventh mask. That is, as shown in FIG. 4, the reflective electrode 330 is formed on the upper surface of the pixel electrode 320 of the reflective region D3. The reflective electrode 330 has an embossed shape by the plurality of unevennesses 311 of the organic insulating layer 310, and reflects the external light in front due to the embossing.

As described above, the liquid crystal display device 300 according to another exemplary embodiment of the present invention may form the liquid crystal display device 300 using seven masks, unlike the existing one using eight masks. Therefore, since the liquid crystal display device 300 can be manufactured using less expensive masks, cost can be reduced.

6 is a cross-sectional view of a liquid crystal display according to another exemplary embodiment of the present invention.

Referring to FIG. 6, the liquid crystal display 400 according to another exemplary embodiment of the present invention is the liquid crystal display 300 according to another exemplary embodiment of the present invention illustrated in FIG. 4 except for the organic insulating layer 410. Has the same configuration as Therefore, in the description of still another embodiment according to the present invention shown in FIG. 6, the same reference numerals are given to components that perform the same function as the liquid crystal display device 300 shown in FIG. A separate description of the description is omitted.

The liquid crystal display device 400 may include a transparent insulating substrate 110, a TFT 120 formed on the transparent insulating substrate 110, and a protective film formed on the transparent insulating substrate 110 on which the TFT 120 is formed. 140, an organic insulating layer 410 formed on the passivation layer 140, a pixel electrode 320 formed on the organic insulating layer 410, and a reflective electrode 330 formed on the pixel electrode 320.

The organic insulating layer 410 formed on the passivation layer 140 of the reflective region D3 is formed of a plurality of protrusions, and each of the protrusions 411 has a hemispherical shape to frontally reflect the external light. Preferably, the protrusion 411 has a major inclination of about 5 to 15 degrees. The plurality of protrusions are formed to be spaced apart from each other at a predetermined interval, and the protective layer 140 is exposed between the spaced spaces.

The pixel electrode 320 is provided on the organic insulating layer 410. The contact hole 142 is formed to contact a portion of the drain electrode 125 exposed by the contact hole 142. The pixel electrode 320 is positioned on the top surface of the passivation layer 140 in the transmission region D2 and on the top surface of the organic insulating layer 410 in the reflection region D3. In this case, the pixel electrode 320 contacts the passivation layer 140 exposed between the spaced spaces in which the plurality of protrusions of the organic insulating layer 410 are spaced apart from each other.

The reflective electrode 330 is provided on the pixel electrode 320. The reflective electrode is positioned in the reflective region D3 and has an embossed shape by the organic insulating layer 310. The reflective electrode 330 front-reflects the external light using the embossing.

As described above, according to the present invention, when the organic insulating layer is formed in the reflective-transmissive liquid crystal display device, the organic insulating film is formed only in the reflective region where the reflective electrode is formed, thereby increasing the transmittance of light in the transmissive mode and improving the display quality. have.

In addition, when forming the organic insulating layer, a single mask may be used to remove the organic insulating layer in the contact hole region, and a plurality of irregularities may be formed on the upper surface of the insulating layer. Accordingly, the number of expensive masks can be reduced, manufacturing costs can be reduced, and the process of the organic insulating film can be simplified, thereby improving the assemblability.

Although described above with reference to the embodiments, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below. I can understand.

Claims (10)

An insulating substrate divided into a transistor region, a transmission region, and a reflection region; A thin film transistor formed in the transistor region on the insulating substrate; A passivation layer formed on the insulating substrate on which the thin film transistor is formed and having a contact hole for exposing a portion of the thin film transistor; A pixel electrode formed on the contact hole and the passivation layer of the transmissive and reflective region and in contact with the thin film transistor through the contact hole; An organic insulating layer formed only on the pixel electrode corresponding to the reflective region; And A liquid crystal display device formed on the organic insulating layer and including a reflective electrode for reflecting light provided from the outside. The liquid crystal display device according to claim 1, wherein the organic insulating film has a plurality of uneven parts formed on the top thereof to reflect the light in front. The liquid crystal display of claim 1, wherein the organic insulating layer is formed of a plurality of protrusions spaced apart from each other to reflect the light in front. Forming a thin film transistor in the transistor region on the insulating substrate divided into a transistor region, a transmission region and a reflection region; Forming a protective film on the substrate on which the thin film transistor is formed; Etching a portion of the passivation layer to form a contact hole for exposing one side of the thin film transistor; Forming a pixel electrode on the passivation layer of the contact hole, the transmission region, and the reflection region; Depositing an organic insulating layer on the passivation layer on which the contact hole and the pixel electrode are formed; Removing a portion of the organic insulating film in the reflective region, the organic insulating film in the transistor region and the transmission region, and forming a plurality of uneven parts on an upper surface of the organic insulating film; And Forming a reflective electrode on an upper surface of the organic insulating layer. The method of claim 4, wherein the removing of the organic insulating layer and forming the plurality of uneven parts are performed. Removing a portion of the organic insulating layer of the transistor region and the transparent region and the organic insulating layer of the reflective region by one exposure process using a mask divided into a light blocking region and a light transmitting region; And And heat treating the organic insulating layer to form the plurality of uneven parts on an upper surface of the organic insulating layer. An insulating substrate divided into a transistor region, a transmission region, and a reflection region; A thin film transistor formed in the transistor region on the insulating substrate; A passivation layer formed on the insulating substrate on which the thin film transistor is formed and having a contact hole for exposing a portion of the thin film transistor; An organic insulating layer formed only on the passivation layer corresponding to the reflective region; A pixel electrode formed over the contact hole, the organic insulating layer, and an upper portion of the passivation layer in the transmission region, and contacting the thin film transistor through the contact hole; And And a reflective electrode formed only on the pixel electrode corresponding to the reflective region and reflecting light provided from the outside. The liquid crystal display of claim 6, wherein the organic insulating layer has a plurality of uneven parts formed on an upper surface thereof. 7. The liquid crystal display device according to claim 6, wherein the organic insulating film is formed of a plurality of protrusions spaced apart from each other to reflect the light in front. Forming a thin film transistor in the transistor region on the insulating substrate divided into a transistor region, a transmission region and a reflection region; Forming a protective film on the substrate on which the thin film transistor is formed; Etching a portion of the passivation layer to form a contact hole for exposing one side of the thin film transistor; Depositing an organic insulating layer on the contact hole and the passivation layer; Removing a portion of the organic insulating film in the reflective region, the organic insulating film in the transistor region and the transmission region, and forming a plurality of uneven parts on an upper surface of the organic insulating film; Forming a pixel electrode on the contact hole, the passivation layer in the transmission region, and an upper surface of the organic insulating layer; And And forming a reflective electrode on the pixel electrode in the reflective region. The method of claim 9, wherein the removing of the organic insulating layer and forming the plurality of uneven parts are performed. Removing a portion of the organic insulating layer of the transistor region and the transparent region and the organic insulating layer of the reflective region by one exposure process using a mask divided into a light blocking region and a light transmitting region; And And heat treating the organic insulating layer to form the plurality of uneven parts on an upper surface of the organic insulating layer.

Images