KR101053285B1 - Liquid Crystal Display Manufacturing Method - Google Patents

Abstract

The present invention discloses a liquid crystal display device and a method of manufacturing the liquid crystal display device in which the pad portion of the liquid crystal display device is improved against corrosion (corrosion) and signal transmission characteristics by ACF contact. The present invention includes forming an insulating film and a metal film sequentially on a substrate on which a channel layer is formed, and then forming a gate pattern on the gate electrode and the pad region; Coating an insulating layer on the substrate on which the gate electrode and the gate pattern are formed, and depositing and etching a transparent metal to form a protective pattern on the pixel electrode and the pad region; Forming a contact hole after applying a first passivation layer on the pixel electrode and the substrate on which the protection pattern is formed; Depositing and etching a metal layer on the first passivation layer on which the contact hole is formed to form a contact portion electrically connecting the passivation pattern and the gate pattern on the source / drain electrode and the pad region; And applying a second passivation layer on the substrate on which the source / drain electrodes are formed.

LCD, Reflection, Transmission, Pad, Signal, ITO, Pattern

Description

Liquid crystal display manufacturing method {METHOD FOR MANUFACTURING LCD}

1 is a view schematically showing the structure of a transflective liquid crystal display device according to the prior art.

2A to 2F illustrate a process of manufacturing a reflective transmissive liquid crystal display device according to the prior art;

3A is a plan view illustrating a liquid crystal display pad region according to the related art.

3B is a cross-sectional view taken along the line AA ′ of FIG. 3A;

4A to 4F illustrate a process of manufacturing a reflective transmissive liquid crystal display device according to the present invention;

5A is a plan view illustrating a liquid crystal display pad region according to the present invention;

5B is a cross-sectional view taken along the line BB ′ of FIG. 5A.

6 is a view showing another embodiment of the present invention.

* Description of the symbols for the main parts of the drawings *

100: lower substrate 101: buffer layer

102: gate insulating film 103: interlayer insulating film

104: protective film 106: photosensitive film

114: channel layer 118: gate electrode                 

120: protection pattern 130: gate pattern

135: contact part

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a method of manufacturing a liquid crystal display device in which a pad portion of the liquid crystal display device is prevented from being spread by ACF (Anisotropic Conductive Film) contact and improved signal transmission characteristics.

Recently, as the information society has progressed rapidly, a display field for processing and displaying a large amount of information has been developed. Until recently, cathode-ray tubes (CRTs) have been the mainstream of display devices and have been developing.

However, in recent years, the need for a flat panel display has emerged in order to meet the times of miniaturization, light weight, and low power consumption. Accordingly, a thin film transistor-liquid crystal display (hereinafter referred to as TFT-LCD) having excellent color reproducibility and thinness has been developed.

Referring to the operation of the TFT-LCD, when an arbitrary pixel is switched by the thin film transistor, the arbitrary pixel that is switched makes it possible to adjust the light transmission amount of the lower light source.

The switching device is mainly composed of an amorphous silicon thin film transistor (a-Si: H TFT) in which a semiconductor layer is formed of amorphous silicon. This is because the amorphous silicon thin film can be formed at a low temperature on a large insulating substrate such as a low-cost glass substrate.

Commonly used TFT-LCDs have used a method of representing an image by the light of a light source called a backlight located under the panel.

However, TFT-LCDs are very inefficient light modulators that transmit only 3-8% of the light incident by the backlight.

The light transmittance of the TFT-LCD is about assuming that the transmittance of the two polarizers is 45%, the transmittances of the two glass plates of the lower and upper plates are 94%, the TFT array and the pixel transmittance are about 65%, and the color filter transmittance is 27%. 7.4%.

Thus, a reflection-transmissive liquid crystal display device that can use an external light source and an internal light source of a liquid crystal display device as a light source for a display has been proposed. The structure is as follows.

1 is a view schematically showing the structure of a reflective transmissive liquid crystal display device according to the prior art.

As shown in FIG. 1, the structure of a general reflection-transmissive liquid crystal display device is largely divided into a color filter substrate, an array substrate, and a liquid crystal layer. The color filter substrate is formed of a black matrix using chromium on a transparent insulating substrate 20. (23) is formed, the R, G, and B color filter layers 25 are formed in the inner space where the black matrix 23 is formed, and a common electrode formed of a transparent metal to apply a common voltage used in the pixel. 21 is arrange | positioned.                         

The array substrate corresponding to the color filter substrate may define a unit pixel region by vertically crossing a plurality of gate lines 12 and data lines 11 on a lower substrate 10 that is a transparent insulating substrate. On the unit pixel region, a TFT 15 for switching operation, a pixel electrode 13b in the transmissive region and a reflecting plate 13a in the reflecting region are formed.

The array substrate and the color filter substrate are bonded to each other with the liquid crystal layer 30 interposed therebetween. When the TFT is turned on by a drive signal from the gate wiring 12 disposed on the array substrate, the data wiring 11 ) Is transferred to the pixel electrode connected to the drain electrode of the TFT 15 turned on.

The light is incident from the outside by varying the transmittance of each pixel by changing the arrangement of liquid crystals by the voltages of the common electrode 21 disposed on the color filter substrate and the pixel electrode 13b to which the data signal voltage is applied. The image is displayed using the light incident from the internal backlight.

As described above, the transflective liquid crystal display displays an image mainly by using external light during a bright day, and reduces power consumption while maintaining image quality by mainly using an internal light source in a dark night or a space.

2A to 2F illustrate a process of manufacturing a reflective transmissive liquid crystal display device according to the prior art.

As shown in FIG. 2A, the thin film transistor region and the pad region are illustrated.                         

First, a buffer layer 1 is formed on the entire area of the lower substrate 10, and then amorphous silicon is formed on the lower substrate 10 having the buffer layer 1 formed thereon, and then low-temperature heat treatment polycrystalline. (poly crystallization).

When the amorphous silicon is crystallized from polysilicon, a mask process is performed on the crystallized polysilicon to form the channel layer 14 on the region where the TFT is to be formed.

Then, as shown in FIG. 2B, the gate insulating film 2 is coated on the entire region of the lower substrate 10 on which the channel layer 14 is formed, the gate metal film is subsequently deposited, and then the gate electrode is etched. (18) is formed.

In this case, the gate electrode 18 is formed on the channel layer 14, and the buffer layer 1 and the gate insulating layer 2 are formed on the pad region.

As described above, when the gate electrode 18 is formed, as shown in FIG. 2C, the interlayer insulating film 3 is applied to the entire area of the substrate on the lower substrate 10, and then an ITO transparent metal film is deposited. Etching is performed to form the pixel electrode 13b.

In this case, the ITO metal layer is patterned on the pad region to form a protective pattern 20 for preventing electrical corrosion (corrosion) on the pad surface when contacting with an anisotropic conductive film (ACF) metal.

When the pixel electrode 13b is formed on the lower substrate 10 as described above, as shown in FIG. 2D, the protective film 4 is coated on the entire area of the substrate, and then a contact hole process is performed. Proceed.                         

The contact hole formed on the passivation layer 4 forms a hole such that the channel layer 14 is opened in an area where the pixel electrode 13b, the channel layer 14, and the drain electrode 17b can be electrically connected. do.

In addition, in the pad region, the protective layer 4 coated on the protective pattern 20 is etched to expose the protective pattern 20 to the outside.

Then, a metal film is deposited on the entire region of the substrate 10 and etched to form source / drain electrodes 17a and 17b to complete the TFT.

When the source / drain electrodes 17a and 17b are formed as described above, as shown in FIG. 2E, the photosensitive film 6 of the photoacrylic component is coated on the entire region of the lower substrate 10, and the reflective electrode is formed. The photosensitive film 6 is patterned so as to remain in the region to be left.

At this time, in order to increase the reflectance of the reflective electrode to be formed on the photosensitive film 6, the surface of the photosensitive film 6 is formed with an embossing structure (embossing).

Then, as shown in FIG. 2F, a metal film having a high reflectance is deposited and etched to form a reflective electrode 13a.

Since the reflective electrode 13a is deposited along the photosensitive film 6 pattern having the uneven structure, the reflective electrode 13a is formed of the uneven structure, which serves to improve the reflectance of external light.

3A is a plan view illustrating a liquid crystal display pad region according to the related art.

As shown in FIG. 3A, the protective film 4 is opened on the protective pattern 20 patterned with an ITO transparent metal on the pad region.                         

Precisely, the protective film 4 and the photoresist film (not shown) are open so that the protective pattern 20 is exposed to the outside.

The protective pattern 20 is electrically connected to the data pad 21 when the source / drain electrodes are formed.

3B is a cross-sectional view taken along the line AA ′ of FIG. 3A.

As shown in FIG. 3B, a buffer layer 1, a gate insulating film 2, and an interlayer insulating film 3 are formed on the lower substrate 10 in a stacked form, and a protective pattern (eg, on the interlayer insulating film 3) is formed. 20) is formed.

The protective layer 4 and the photoresist layer 6 formed on the protective pattern 20 form contact holes to expose the protective pattern to the outside.

The protective pattern 20 is in electrical contact with an anisotropic conductive film (ACF) to supply a signal to the pad region of the liquid crystal display.

In the pad structure of the liquid crystal display device having the above structure, when the ACF is directly in contact with the pad metal, a problem occurs that the surface of the pad metal film is corroded (corrosion), thereby forming a protective pattern patterned with ITO metal.

However, since ITO metal has higher electrical resistance than metal of gate or data wiring, signal transmission is not smooth or signal distortion occurs.

In addition, in order to prevent such signal distortion, when the pad part and the ACF are integrally and electrically contacted, electrical generation occurs on the pad surface.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a liquid crystal display device in which a liquid crystal display pad structure is connected to an ACF without electrical resistance, and at the same time, it is possible to prevent an electrical failure caused on the surface of the pad when contacting the ACF.

In order to achieve the above object, the liquid crystal display device manufacturing method according to the present invention,

Forming an insulating film and a metal film sequentially on the substrate on which the channel layer is formed, and then forming a gate pattern on the gate electrode and the pad region;

Coating an insulating layer on the substrate on which the gate electrode and the gate pattern are formed, and depositing and etching a transparent metal to form a protective pattern on the pixel electrode and the pad region;

 Forming a contact hole after applying a first passivation layer on the pixel electrode and the substrate on which the protection pattern is formed;

Depositing and etching a metal layer on the first passivation layer on which the contact hole is formed to form a contact portion electrically connecting the passivation pattern and the gate pattern on the source / drain electrode and the pad region; And

And applying a second passivation layer on the substrate on which the source / drain electrodes are formed.

Here, at least two contact parts may be formed, and the gate pattern and the contact part may be electrically connected to the protective pattern to form a low resistance pattern.

In addition, the liquid crystal display device manufacturing method according to the present invention,

Forming an insulating film and a metal film sequentially on the substrate on which the buffer layer and the channel layer are formed, and then forming a gate pattern on the gate electrode and the pad region;

Coating an insulating layer on the substrate on which the gate electrode and the gate pattern are formed, and depositing and etching a transparent metal to form a protective pattern on the pixel electrode and the pad region;

 Forming a contact hole after applying a passivation layer on the substrate on which the pixel electrode and the protection pattern are formed;

Depositing and etching a metal film on the passivation layer on which the contact hole is formed to form a contact portion electrically connecting the passivation pattern and the gate pattern on a source / drain electrode and a pad region;

Applying a photoresist film on the substrate on which the source / drain electrodes are formed and patterning the concave-convex structure; And

And depositing and etching a metal film on the photoresist patterned with the concave-convex structure to form a reflective electrode.

Here, at least two contact parts may be formed, and the gate pattern and the contact part may be electrically connected to the protective pattern to form a low resistance pattern.

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According to the present invention, it is possible to connect the liquid crystal display pad structure with the ACF without electrical resistance, and to prevent the electrical failure caused on the surface of the pad when the ACF contacts the ACF.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4A to 4F illustrate a process of manufacturing a reflective transmissive liquid crystal display device according to the present invention.

As shown in FIG. 4A, a buffer layer 101 is formed on the entire area of the lower substrate 100, and then amorphous silicon is formed on the lower substrate 100 on which the buffer layer 101 is formed. Low temperature heat treatment is performed for poly crystallization.

When the amorphous silicon is crystallized from polysilicon, a mask process is performed on the crystallized polysilicon to form the channel layer 114 on the region where the TFT is to be formed.

Next, as shown in FIG. 4B, the gate insulating layer 102 is coated on the entire region of the lower substrate 100 on which the channel layer 114 is formed, the gate metal layer is subsequently deposited, and the gate electrode is etched. A gate pattern 130 is formed on the 118 and the pad region.

The gate pattern 130 compensates for the disadvantage that the protective pattern made of ITO metal formed to prevent the corrosion of the pad region is high.

Therefore, although the resistance is lower than that of the protective pattern, the same metal as the gate wiring is used in the present invention.

In this case, the gate electrode 118 is formed on the channel layer 114, and the gate pattern 130 is formed on the pad region.

As described above, when the gate electrode 118 and the gate pattern 130 are formed, as shown in FIG. 4C, the interlayer insulating film 103 is applied to the entire area of the substrate on the lower substrate 100, and the ITO transparent layer is formed. A metal film is deposited and then etched to form the pixel electrode 113b.

In this case, the ITO metal layer is patterned on the pad region to form a protective pattern 120 to prevent the generation of corrosion (corrosion) on the pad surface when contacted with an anisotropic conductive film (ACF) metal.

The pixel electrode 113b has a hole formed in an area to be electrically connected to the drain electrode for electrical contact with a drain electrode to be formed later, and the protection pattern 120 formed on the pad area is A plurality of holes are formed for electrical connection with the gate pattern 130.

When the pixel electrode 113b is formed on the lower substrate 100 as described above, as shown in FIG. 4D, the protective film 104 is coated on the entire area of the substrate, and then a contact hole process is performed.

The contact hole formed on the passivation layer 104 forms a hole to open the channel layer 114 in an area where the pixel electrode 113b, the channel layer 114, and the drain electrode 117b can be electrically connected. do.

In addition, the pad region penetrates the passivation layer 104 applied on the passivation pattern 120 and the hole formed in the passivation pattern 120, and between the passivation pattern 120 and the gate pattern 130. The interlayer insulating layer 103 is etched to expose the gate pattern 130.

Then, the metal film is deposited on the entire region of the substrate 100 and etched to form source / drain electrodes 117a and 117b.

The drain electrode 117b is electrically connected to the pixel electrode 113b and the channel layer 114, and, in the pad region, the contact portion in which the protection pattern 120 and the gate pattern 130 are made of source / drain electrode metal. Electrical connection by 135.

As described above, when the source / drain electrodes 117a and 117b and the contact portion 135 are formed, as shown in FIG. 4E, the photoresist film 106 having the photoacryl component is formed on the entire region of the lower substrate 100. It is applied and patterned so that the photosensitive film 106 can exist in the area where a reflective electrode is to be formed.

In addition, the photoresist layer 106 may be removed from the pad region so that the protective pattern 120 and the contact portion 135 may be exposed to the outside.

In this case, in order to increase the reflectance of the reflective electrode to be formed on the photosensitive film 106, the surface of the photosensitive film 106 is formed with an embossing structure (embossing).

Next, as shown in FIG. 4F, a metal film having a high reflectance is deposited and etched to form a reflective electrode 113a.

Since the reflective electrode 113a is formed along the photosensitive film 106 pattern having an uneven structure, the reflective electrode 113a has an uneven structure, thereby improving the reflectance of external light.

5A is a plan view illustrating a liquid crystal display pad region according to the present invention.

As shown in FIG. 5A, the gate pattern 130 is formed on the same layer as the layer on which the gate electrode is formed, and the ITO transparent layer is disposed on the gate pattern 130 with an interlayer insulating film (not shown) therebetween. A protective pattern 120 patterned with metal is formed.

In addition, the protection layer 104 formed with the protection pattern 120 is opened, and the contact portion 135 electrically connecting the protection pattern 120, the protection pattern 120, and the gate pattern 130 to the outside. Exposed.

The protective pattern 120 is electrically connected to the data pad 21 when the source / drain electrodes are formed.

5B is a cross-sectional view taken along the line BB ′ of FIG. 3A.                     

As shown in FIG. 5B, a buffer layer 101 and a gate insulating layer 102 are formed on the lower substrate 100, and a gate pattern 130 is formed on the gate insulating layer 102.

A protective pattern 120 is formed on the gate pattern 130 with an interlayer insulating layer 103 interposed therebetween, and the protective pattern 120 and the gate pattern 130 are electrically connected by the contact portion 135. It is.

The passivation layer 104 and the photoresist layer 106 formed on the passivation pattern 120 have a structure in which contact holes are formed to expose the passivation pattern 120 and the contact portion 135 to the outside.

Accordingly, the protective pattern 120 is in electrical contact with the ACF, thereby eliminating the problem of corrosion on the pad surface, and the gate pattern 130 and the contact portion 135 have low resistance for signal transmission. By acting as a wiring, the signal can be transmitted to the pad area without signal distortion.

In the above description, the reflection-transmissive liquid crystal display device has been described, but the transmissive liquid crystal display device can be used as it is. FIG. 6 is a view showing another embodiment of the present invention.

As shown in FIG. 6, after forming a buffer layer 201 on the entire area of the lower substrate 200, amorphous silicon is formed on the lower substrate 200 on which the buffer layer 201 is formed. It is polycrystallinelized by low temperature heat treatment.

When the amorphous silicon is crystallized from polysilicon, a mask process is performed on the crystallized polysilicon to form the channel layer 214 on the region where the TFT is to be formed.

Thereafter, the gate insulating layer 202 is coated on the entire region of the lower substrate 200, and the gate metal layer is subsequently deposited and etched to form the gate pattern 230 on the gate electrode 218 and the pad region. .

The gate pattern 230 is to form a metal pattern having a low resistance in order to compensate for the disadvantage that a protective pattern made of ITO metal has a high electrical resistance in order to prevent corrosion (corrosion) of the pad region.

In this case, the gate electrode 218 is formed on the channel layer 114, and the gate pattern 230 is formed on the pad region.

Then, the interlayer insulating film 203 is applied to the entire area of the substrate on the lower substrate 200, an ITO transparent metal film is deposited, and then etched to form the pixel electrode 213b.

In this case, the ITO metal layer is patterned on the pad region to form a protective pattern 220 to prevent electrical corrosion (corrosion) on the pad surface upon contact with an anisotropic conductive film (ACF) metal.

The pixel electrode 213b has a hole formed in an area to be electrically connected to the drain electrode for electrical contact with a drain electrode to be formed later, and the protection pattern 220 formed on the pad area is formed in the gate. A plurality of holes are formed for electrical connection with the pattern 230.                     

When the pixel electrode 213b is formed on the lower substrate 200 as described above, the protective layer 204 is coated on the entire area of the substrate, and then a contact hole process is performed.

The contact hole formed on the passivation layer 204 forms a hole to open the channel layer 214 in an area where the pixel electrode 213b, the channel layer 214, and the drain electrode 217b can be electrically connected. do.

In addition, the pad region penetrates the passivation layer 204 applied on the passivation pattern 220 and the hole formed in the passivation pattern 220, and between the passivation pattern 220 and the gate pattern 230. The interlayer insulating layer 203 is etched to expose the gate pattern 230.

Then, the metal film is deposited on the entire region of the substrate 200 and etched to form source / drain electrodes 217a and 217b.

The drain electrode 217b is electrically connected to the pixel electrode 213b and the channel layer 214, and a contact portion in which the protective pattern 220 and the gate pattern 230 are made of a source / drain electrode metal in a pad region. And electrically connected by 235.

The photoacryl photosensitive film 206 of the photoacrylic component is coated and planarized on the entire region of the substrate on which the source / drain electrodes 217a and 217b are formed. In the case of a transmissive liquid crystal display, the photosensitive film 206 serves as a protective film.

At this time, unlike the reflective liquid crystal display device, since the reflective electrode is not formed, only the planarization process is performed by the photosensitive film 206.

Accordingly, the photoresist layer 206 serves as a protective film for protecting the device and an overcoat for surface planarization in the transmissive type.

As described above, even in the transmissive liquid crystal display device, a signal resistance cannot be easily transmitted due to an increase in resistance due to the ITO protection pattern in the pad region. Was prevented.

In addition, a protective pattern made of ITO metal film can prevent pad surface spreading caused by ACF contact.

As described in detail above, the present invention has the effect of connecting the liquid crystal display pad structure with the ACF without electrical resistance, and also preventing the electrical failure caused on the pad surface by contacting the ACF.

The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.

Claims (9)

Forming an insulating film and a metal film sequentially on the substrate on which the channel layer is formed, and then forming a gate pattern on the gate electrode and the pad region; Coating an insulating layer on the substrate on which the gate electrode and the gate pattern are formed, and depositing and etching a transparent metal to form a protective pattern on the pixel electrode and the pad region;  Forming a contact hole after applying a first passivation layer on the pixel electrode and the substrate on which the protection pattern is formed; Depositing and etching a metal layer on the first passivation layer on which the contact hole is formed to form a contact portion electrically connecting the passivation pattern and the gate pattern on the source / drain electrode and the pad region; And And applying a second passivation layer on the substrate on which the source / drain electrodes are formed. The method of claim 1, And at least two contact portions. The method of claim 1, And the gate pattern and the contact portion are electrically connected to the protection pattern to form a low resistance pattern. Forming an insulating film and a metal film sequentially on the substrate on which the buffer layer and the channel layer are formed, and then forming a gate pattern on the gate electrode and the pad region; Coating an insulating layer on the substrate on which the gate electrode and the gate pattern are formed, and depositing and etching a transparent metal to form a protective pattern on the pixel electrode and the pad region;  Forming a contact hole after applying a passivation layer on the substrate on which the pixel electrode and the protection pattern are formed; Depositing and etching a metal film on the passivation layer on which the contact hole is formed to form a contact portion electrically connecting the passivation pattern and the gate pattern on a source / drain electrode and a pad region; Applying a photoresist film on the substrate on which the source / drain electrodes are formed and patterning the concave-convex structure; And And depositing and etching a metal film on the photoresist patterned with the uneven structure to form a reflective electrode. The method of claim 4, wherein And at least two contact portions. The method of claim 4, wherein And the gate pattern and the contact portion are electrically connected to the protection pattern to form a low resistance pattern. delete delete delete

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